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IPA80R650CEXKSA2 IPA80R650CEXKSA2 Infineon Technologies Infineon-IPA80R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7919f011e57 Description: MOSFET N-CH 800V 8A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3F
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 153 шт:
термін постачання 21-31 дні (днів)
2+166.61 грн
50+86.32 грн
100+78.65 грн
Мінімальне замовлення: 2 шт
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S6SBP401AM2SA1001 Infineon Technologies Infineon-S6SBP401AJ0SA1001_S6SBP401AM2SA100_Automotive_Evaluation_Board_Operation_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efb9814118a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_ Description: KIT S6SBP401AM
Packaging: Box
Voltage - Output: 1.125V, 1.25V, 2.55V, 2.8V, 3.25V, 3.375V
Voltage - Input: 4.5V ~ 5.5V
Current - Output: 3A, 2A, 2A, 1A, 500mA, 200mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: S6BP401A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down with LDO
Outputs and Type: 6, Non-Isolated
Part Status: Last Time Buy
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S25FS064SAGMFN010 S25FS064SAGMFN010 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 2V
DigiKey Programmable: Verified
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tray
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
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S25FS064SDSNFI030 S25FS064SDSNFI030 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLSH 64MBIT SPI/QUAD I/O 8LGA
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S25FS064SAGNFN030 S25FS064SAGNFN030 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8LGA
DigiKey Programmable: Not Verified
Packaging: Tray
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 8-LGA (5x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 8-WLGA
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IRAC1168-SO8 Infineon Technologies IRS1168_SO8_Daughter_Card.pdf Description: KIT RDK DAUGHTER BOARD SO8
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: IR1168
Supplied Contents: Unpopulated (Bare) Board(s)
Embedded: No
Part Status: Obsolete
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IRAC1168-DFET Infineon Technologies IRS1168_DFET_DaughterCard.pdf Description: EVAL BOARD FOR IR1168
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Unpopulated (Bare) Board(s)
Utilized IC / Part: IR1168
Supplied Contents: Unpopulated (Bare) Board(s)
Embedded: No
Part Status: Obsolete
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S29GL01GP11TFCR20D S29GL01GP11TFCR20D Infineon Technologies Description: IC FLASH 1GBIT PARALLEL 56TSOP
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S29GL01GP11TFIR10D S29GL01GP11TFIR10D Infineon Technologies Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL01GP11TFIR20D S29GL01GP11TFIR20D Infineon Technologies Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL01GP13TFIH20D S29GL01GP13TFIH20D Infineon Technologies Description: IC FLASH 1GBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 130 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 130ns
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
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S29GL512P10TFCR20D S29GL512P10TFCR20D Infineon Technologies Description: IC FLASH 512MBIT PARALLEL 56TSOP
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
Memory Organization: 32M x 16
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 100ns
Part Status: Obsolete
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64-0055PBF Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 60V 160A TO220AB
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V
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IRGIB4610DPBF Infineon Technologies IGBT%20Selection%20Guide.pdf Description: IGBT 600V FULLPAK220 COPAK
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IRGPS47160DPBF IRGPS47160DPBF Infineon Technologies IGBT%20Selection%20Guide.pdf Description: IGBT 600V TO247 COPAK
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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IRGP4269D-EPBF IRGP4269D-EPBF Infineon Technologies Description: IGBT 600V TO247 COPAK
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IRGP4263D1PBF IRGP4263D1PBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 600V TO247 COPAK
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 2.9mJ (on), 1.4mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 325 W
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IRGP4269DPBF IRGP4269DPBF Infineon Technologies Description: IGBT 600V TO247 COPAK
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IRGP4263D1-EPBF IRGP4263D1-EPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 600V TO247 COPAK
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 2.9mJ (on), 1.4mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 325 W
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MB88572P-GT-319M-SH Infineon Technologies Description: IC MCU 8BIT MICOM
Packaging: Bulk
DigiKey Programmable: Not Verified
Part Status: Obsolete
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MB89193APF-G-346-BND-R MB89193APF-G-346-BND-R Infineon Technologies Description: IC MCU 8BIT 8KB MROM 28SOP
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 16
Part Status: Obsolete
Supplier Device Package: 28-SOP
Peripherals: POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: F²MC-8L
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MB89374-PFQ-G-BND Infineon Technologies Description: IC MCU 8BIT FLASH
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Bulk
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MB89615RPFM-G-1025-BNDE1 MB89615RPFM-G-1025-BNDE1 Infineon Technologies Description: IC MCU 8BIT 16KB MROM 64QFP
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 10MHz
Mounting Type: Surface Mount
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 53
Part Status: Obsolete
Supplier Device Package: 64-QFP (12x12)
Peripherals: POR, PWM, WDT
Package / Case: 64-LQFP
Connectivity: Serial I/O
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MB89713APF-G-526-BND-TN MB89713APF-G-526-BND-TN Infineon Technologies Description: IC MCU 8BIT 8KB MROM 80PQFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 260 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Number of I/O: 53
DigiKey Programmable: Not Verified
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MB90561APMC-G-269-BNDE1 MB90561APMC-G-269-BNDE1 Infineon Technologies Description: IC MCU 16BIT 32KB MROM 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
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MB90673PF-G-269-BND-B MB90673PF-G-269-BND-B Infineon Technologies Description: IC MCU 16BIT 48KB MROM 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16L
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 65
DigiKey Programmable: Not Verified
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MB89215-G-104-CHIP Infineon Technologies Description: IC MCU 8BIT 16KB MROM 320BGA
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Number of I/O: 21
DigiKey Programmable: Not Verified
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MB89485-G-212-CHIP-CN Infineon Technologies Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
DigiKey Programmable: Not Verified
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MB89193PF-G-317-BND-RE1 MB89193PF-G-317-BND-RE1 Infineon Technologies Description: IC MCU 8BIT 8KB MROM 28SOP
Packaging: Tube
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
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MB90467PFM-G-258E1 MB90467PFM-G-258E1 Infineon Technologies Description: IC MCU 16BIT 64KB MROM 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
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MB89P568-101PFV-GE1 MB89P568-101PFV-GE1 Infineon Technologies Description: IC MCU 8BIT 48KB OTP 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Not Verified
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IHW25N120E1XKSA1 IHW25N120E1XKSA1 Infineon Technologies Infineon-IHW25N120E1-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156a2acb89b20c1 Description: IGBT NPT/TRENCH 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO247-3
IGBT Type: NPT and Trench
Switching Energy: 800µJ (off)
Gate Charge: 147 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 231 W
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ICE1CS02GXUMA1 ICE1CS02GXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC PFC CTR AV CURR 65KHZ DSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Average Current
Supplier Device Package: PG-DSO-16-22
Part Status: Obsolete
Current - Startup: 1.3 mA
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IPA80R1K4P7XKSA1 IPA80R1K4P7XKSA1 Infineon Technologies Infineon-IPA80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d90b3461516c Description: MOSFET N-CH 800V 4A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 178 шт:
термін постачання 21-31 дні (днів)
3+136.38 грн
50+63.07 грн
100+56.39 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IPS80R1K4P7AKMA1 IPS80R1K4P7AKMA1 Infineon Technologies Infineon-IPS80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e490456a1aa5 Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
IPU80R1K4P7AKMA1 IPU80R1K4P7AKMA1 Infineon Technologies INFN-S-A0002786355-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
4+94.54 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPU80R4K5P7AKMA1 IPU80R4K5P7AKMA1 Infineon Technologies Infineon-IPU80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e8ec5bf3073e Description: MOSFET N-CH 800V 1.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 1514 шт:
термін постачання 21-31 дні (днів)
5+76.72 грн
75+31.63 грн
150+28.11 грн
525+21.67 грн
1050+19.63 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 Infineon Technologies Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5 Description: MOSFET N-CH 800V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+24.89 грн
5000+22.21 грн
7500+21.42 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD80R450P7ATMA1 IPD80R450P7ATMA1 Infineon Technologies Infineon-IPD80R450P7-DS-v02_00-EN.pdf?fileId=5546d4625607bd1301562e3b26963327 Description: MOSFET N-CH 800V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+58.39 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 Infineon Technologies Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5 Description: MOSFET N-CH 800V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 15209 шт:
термін постачання 21-31 дні (днів)
4+96.09 грн
10+58.43 грн
100+38.80 грн
500+28.49 грн
1000+25.95 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPD80R450P7ATMA1 IPD80R450P7ATMA1 Infineon Technologies Infineon-IPD80R450P7-DS-v02_00-EN.pdf?fileId=5546d4625607bd1301562e3b26963327 Description: MOSFET N-CH 800V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
на замовлення 4129 шт:
термін постачання 21-31 дні (днів)
2+195.28 грн
10+121.48 грн
100+83.39 грн
500+62.99 грн
1000+59.23 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PTFA080551EV4T500XWSA1 Infineon Technologies Description: IC FET RF LDMOS 55W H-36265-2
товару немає в наявності
В кошику  од. на суму  грн.
PTFA211801EV5T350XWSA1 Infineon Technologies Description: IC RF FET LDMOS H-36260-2
товару немає в наявності
В кошику  од. на суму  грн.
PTRA093302DC V1 Infineon Technologies Part_Number_Guide_Web.pdf Description: RF MOSFET LDMOS H-49248H-4
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IPP80R1K4P7XKSA1 IPP80R1K4P7XKSA1 Infineon Technologies Infineon-IPP80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e3aa862915e5 Description: MOSFET N-CH 800V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP80R450P7XKSA1 IPP80R450P7XKSA1 Infineon Technologies Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd Description: MOSFET N-CH 800V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
на замовлення 5467 шт:
термін постачання 21-31 дні (днів)
2+198.38 грн
50+94.98 грн
100+87.15 грн
500+64.70 грн
1000+59.70 грн
2000+55.75 грн
5000+54.37 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPP80R280P7XKSA1 IPP80R280P7XKSA1 Infineon Technologies Infineon-IPP80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e3d89cfa175f Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
2+289.04 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPD80R280P7ATMA1 IPD80R280P7ATMA1 Infineon Technologies Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b Description: MOSFET N-CH 800V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+87.41 грн
5000+81.77 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
S70GL02GT11FHA010 S70GL02GT11FHA010 Infineon Technologies Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
1+3184.87 грн
10+2835.36 грн
25+2744.07 грн
50+2511.12 грн
180+2395.18 грн
В кошику  од. на суму  грн.
S70GL02GT11FHI010 S70GL02GT11FHI010 Infineon Technologies Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
на замовлення 1060 шт:
термін постачання 21-31 дні (днів)
1+1985.31 грн
10+1769.03 грн
25+1712.64 грн
40+1580.27 грн
180+1495.54 грн
360+1457.54 грн
В кошику  од. на суму  грн.
IRFC3004EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC3006EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRFC3107EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
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IRFC3205ZEB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRFC3206EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC3710ZEB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC4020D Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC4104EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
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IRFC4115ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC4127ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IPA80R650CEXKSA2 Infineon-IPA80R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7919f011e57
IPA80R650CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3F
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 153 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+166.61 грн
50+86.32 грн
100+78.65 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
S6SBP401AM2SA1001 Infineon-S6SBP401AJ0SA1001_S6SBP401AM2SA100_Automotive_Evaluation_Board_Operation_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efb9814118a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_
Виробник: Infineon Technologies
Description: KIT S6SBP401AM
Packaging: Box
Voltage - Output: 1.125V, 1.25V, 2.55V, 2.8V, 3.25V, 3.375V
Voltage - Input: 4.5V ~ 5.5V
Current - Output: 3A, 2A, 2A, 1A, 500mA, 200mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: S6BP401A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down with LDO
Outputs and Type: 6, Non-Isolated
Part Status: Last Time Buy
товару немає в наявності
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S25FS064SAGMFN010 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGMFN010
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 2V
DigiKey Programmable: Verified
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tray
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
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S25FS064SDSNFI030 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SDSNFI030
Виробник: Infineon Technologies
Description: IC FLSH 64MBIT SPI/QUAD I/O 8LGA
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Мінімальне замовлення: 980 шт
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S25FS064SAGNFN030 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGNFN030
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8LGA
DigiKey Programmable: Not Verified
Packaging: Tray
Memory Organization: 8M x 8
Memory Interface: SPI - Quad I/O, QPI
Part Status: Active
Supplier Device Package: 8-LGA (5x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 8-WLGA
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Мінімальне замовлення: 980 шт
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IRAC1168-SO8 IRS1168_SO8_Daughter_Card.pdf
Виробник: Infineon Technologies
Description: KIT RDK DAUGHTER BOARD SO8
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: IR1168
Supplied Contents: Unpopulated (Bare) Board(s)
Embedded: No
Part Status: Obsolete
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IRAC1168-DFET IRS1168_DFET_DaughterCard.pdf
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IR1168
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Unpopulated (Bare) Board(s)
Utilized IC / Part: IR1168
Supplied Contents: Unpopulated (Bare) Board(s)
Embedded: No
Part Status: Obsolete
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S29GL01GP11TFCR20D
S29GL01GP11TFCR20D
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
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S29GL01GP11TFIR10D
S29GL01GP11TFIR10D
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL01GP11TFIR20D
S29GL01GP11TFIR20D
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL01GP13TFIH20D
S29GL01GP13TFIH20D
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 130 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 130ns
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
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S29GL512P10TFCR20D
S29GL512P10TFCR20D
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
Memory Organization: 32M x 16
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 100ns
Part Status: Obsolete
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64-0055PBF Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 160A TO220AB
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V
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IRGIB4610DPBF IGBT%20Selection%20Guide.pdf
Виробник: Infineon Technologies
Description: IGBT 600V FULLPAK220 COPAK
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IRGPS47160DPBF IGBT%20Selection%20Guide.pdf
IRGPS47160DPBF
Виробник: Infineon Technologies
Description: IGBT 600V TO247 COPAK
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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IRGP4269D-EPBF
IRGP4269D-EPBF
Виробник: Infineon Technologies
Description: IGBT 600V TO247 COPAK
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IRGP4263D1PBF Part_Number_Guide_Web.pdf
IRGP4263D1PBF
Виробник: Infineon Technologies
Description: IGBT 600V TO247 COPAK
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 2.9mJ (on), 1.4mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 325 W
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IRGP4269DPBF
IRGP4269DPBF
Виробник: Infineon Technologies
Description: IGBT 600V TO247 COPAK
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IRGP4263D1-EPBF Part_Number_Guide_Web.pdf
IRGP4263D1-EPBF
Виробник: Infineon Technologies
Description: IGBT 600V TO247 COPAK
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 2.9mJ (on), 1.4mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 325 W
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MB88572P-GT-319M-SH
Виробник: Infineon Technologies
Description: IC MCU 8BIT MICOM
Packaging: Bulk
DigiKey Programmable: Not Verified
Part Status: Obsolete
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MB89193APF-G-346-BND-R
MB89193APF-G-346-BND-R
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 28SOP
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 16
Part Status: Obsolete
Supplier Device Package: 28-SOP
Peripherals: POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: F²MC-8L
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MB89374-PFQ-G-BND
Виробник: Infineon Technologies
Description: IC MCU 8BIT FLASH
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Bulk
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MB89615RPFM-G-1025-BNDE1
MB89615RPFM-G-1025-BNDE1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 64QFP
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 10MHz
Mounting Type: Surface Mount
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 53
Part Status: Obsolete
Supplier Device Package: 64-QFP (12x12)
Peripherals: POR, PWM, WDT
Package / Case: 64-LQFP
Connectivity: Serial I/O
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MB89713APF-G-526-BND-TN
MB89713APF-G-526-BND-TN
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 80PQFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 260 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Number of I/O: 53
DigiKey Programmable: Not Verified
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MB90561APMC-G-269-BNDE1
MB90561APMC-G-269-BNDE1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 32KB MROM 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
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MB90673PF-G-269-BND-B
MB90673PF-G-269-BND-B
Виробник: Infineon Technologies
Description: IC MCU 16BIT 48KB MROM 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16L
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 65
DigiKey Programmable: Not Verified
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MB89215-G-104-CHIP
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 320BGA
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Number of I/O: 21
DigiKey Programmable: Not Verified
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MB89485-G-212-CHIP-CN
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
DigiKey Programmable: Not Verified
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MB89193PF-G-317-BND-RE1
MB89193PF-G-317-BND-RE1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 28SOP
Packaging: Tube
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
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MB90467PFM-G-258E1
MB90467PFM-G-258E1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
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MB89P568-101PFV-GE1
MB89P568-101PFV-GE1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 48KB OTP 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Not Verified
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IHW25N120E1XKSA1 Infineon-IHW25N120E1-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156a2acb89b20c1
IHW25N120E1XKSA1
Виробник: Infineon Technologies
Description: IGBT NPT/TRENCH 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO247-3
IGBT Type: NPT and Trench
Switching Energy: 800µJ (off)
Gate Charge: 147 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 231 W
товару немає в наявності
Мінімальне замовлення: 240 шт
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ICE1CS02GXUMA1 Part_Number_Guide_Web.pdf
ICE1CS02GXUMA1
Виробник: Infineon Technologies
Description: IC PFC CTR AV CURR 65KHZ DSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Average Current
Supplier Device Package: PG-DSO-16-22
Part Status: Obsolete
Current - Startup: 1.3 mA
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IPA80R1K4P7XKSA1 Infineon-IPA80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d90b3461516c
IPA80R1K4P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 178 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+136.38 грн
50+63.07 грн
100+56.39 грн
Мінімальне замовлення: 3 шт
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IPS80R1K4P7AKMA1 Infineon-IPS80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e490456a1aa5
IPS80R1K4P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
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IPU80R1K4P7AKMA1 INFN-S-A0002786355-1.pdf?t.download=true&u=5oefqw
IPU80R1K4P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+94.54 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPU80R4K5P7AKMA1 Infineon-IPU80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e8ec5bf3073e
IPU80R4K5P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 1514 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+76.72 грн
75+31.63 грн
150+28.11 грн
525+21.67 грн
1050+19.63 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IPD80R1K4P7ATMA1 Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5
IPD80R1K4P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+24.89 грн
5000+22.21 грн
7500+21.42 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD80R450P7ATMA1 Infineon-IPD80R450P7-DS-v02_00-EN.pdf?fileId=5546d4625607bd1301562e3b26963327
IPD80R450P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+58.39 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPD80R1K4P7ATMA1 Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5
IPD80R1K4P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
на замовлення 15209 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+96.09 грн
10+58.43 грн
100+38.80 грн
500+28.49 грн
1000+25.95 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IPD80R450P7ATMA1 Infineon-IPD80R450P7-DS-v02_00-EN.pdf?fileId=5546d4625607bd1301562e3b26963327
IPD80R450P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
на замовлення 4129 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+195.28 грн
10+121.48 грн
100+83.39 грн
500+62.99 грн
1000+59.23 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PTFA080551EV4T500XWSA1
Виробник: Infineon Technologies
Description: IC FET RF LDMOS 55W H-36265-2
товару немає в наявності
В кошику  од. на суму  грн.
PTFA211801EV5T350XWSA1
Виробник: Infineon Technologies
Description: IC RF FET LDMOS H-36260-2
товару немає в наявності
В кошику  од. на суму  грн.
PTRA093302DC V1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: RF MOSFET LDMOS H-49248H-4
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IPP80R1K4P7XKSA1 Infineon-IPP80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e3aa862915e5
IPP80R1K4P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP80R450P7XKSA1 Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd
IPP80R450P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
на замовлення 5467 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+198.38 грн
50+94.98 грн
100+87.15 грн
500+64.70 грн
1000+59.70 грн
2000+55.75 грн
5000+54.37 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPP80R280P7XKSA1 Infineon-IPP80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e3d89cfa175f
IPP80R280P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+289.04 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IPD80R280P7ATMA1 Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b
IPD80R280P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+87.41 грн
5000+81.77 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
S70GL02GT11FHA010 Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70GL02GT11FHA010
Виробник: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3184.87 грн
10+2835.36 грн
25+2744.07 грн
50+2511.12 грн
180+2395.18 грн
В кошику  од. на суму  грн.
S70GL02GT11FHI010 Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70GL02GT11FHI010
Виробник: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
на замовлення 1060 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1985.31 грн
10+1769.03 грн
25+1712.64 грн
40+1580.27 грн
180+1495.54 грн
360+1457.54 грн
В кошику  од. на суму  грн.
IRFC3004EB IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC3006EB IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRFC3107EB IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC3205ZEB IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRFC3206EB IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC3710ZEB IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC4020D IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC4104EB IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC4115ED IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
IRFC4127ED IR_PartNumberingSystem.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
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