Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124842) > Сторінка 436 з 2081
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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IPI45N06S4L08AKSA2 | Infineon Technologies |
Description: OPTLMOS N-CHANNEL POWER MOSFETPackaging: Bulk |
на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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IPI45N06S4-09AKSA2 | Infineon Technologies |
Description: IPI45N06 - 55V-60V N-CHANNEL AUTSupplier Device Package: PG-TO262-3-1 Vgs(th) (Max) @ Id: 4V @ 34µA Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
на замовлення 97500 шт: термін постачання 21-31 дні (днів) |
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IPB45N06S409ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 45A TO263-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BGA751L7E6327 | Infineon Technologies |
Description: IC AMP GPS 170MHZ-1.675GHZ TSLP7Supplier Device Package: PG-TSLP-7-1 Test Frequency: 470MHz P1dB: -10dBm Noise Figure: 1.3dB Current - Supply: 5.85mA Gain: 15.75dB Voltage - Supply: 1.5V ~ 3.6V RF Type: General Purpose Frequency: 170MHz ~ 1.675GHz Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Bulk |
на замовлення 30441 шт: термін постачання 21-31 дні (днів) |
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BGSA11GN10E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SPST 5GHZ TSNP10-1Packaging: Tape & Reel (TR) Package / Case: 10-XFQFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPST RF Type: General Purpose Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.8V ~ 3.6V Insertion Loss: 0.35dB Frequency Range: 100MHz ~ 5GHz Test Frequency: 2.69GHz Isolation: 14dB Supplier Device Package: PG-TSNP-10-1 IIP3: 75dBm Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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EVAL-M1-301FTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IMC301A-F064Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IMC301A-F064 Supplied Contents: Board(s), Cable(s), Accessories Primary Attributes: 3.3V, 5V Supply Secondary Attributes: On-Board LEDs, Test Points Embedded: Yes, MCU |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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ESD133B1W01005E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 13VC P/PGWLL22Packaging: Cut Tape (CT) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: DVI, HDMI, Telecom, USB Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V Supplier Device Package: P/PG-WLL-2-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.5V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 21W Power Line Protection: No Part Status: Active |
на замовлення 2604 шт: термін постачання 21-31 дні (днів) |
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S25FL256SDSBHI210 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 24BGAMemory Format: FLASH Clock Frequency: 80 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 256Mbit Mounting Type: Surface Mount Package / Case: 24-TBGA Packaging: Tray DigiKey Programmable: Not Verified Memory Organization: 32M x 8 Memory Interface: SPI - Quad I/O Supplier Device Package: 24-BGA (8x6) |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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MB95F714MNPMC-G-SNE2 | Infineon Technologies |
Description: IC MCU 8BIT 20KB FLASH 80LQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IST026N10NM5AUMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-HSOF-5Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 313W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 148µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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IST026N10NM5AUMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-HSOF-5Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 313W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 148µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V |
на замовлення 1663 шт: термін постачання 21-31 дні (днів) |
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ISC0802NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 22A/150A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 92µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC0802NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 22A/150A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 92µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V |
на замовлення 7324 шт: термін постачання 21-31 дні (днів) |
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BTS3028SDL | Infineon Technologies |
Description: BTS3028 - HITFET, AUTOMOTIVE SMA |
товару немає в наявності |
Мінімальне замовлення: 237 шт В кошику од. на суму грн. | ||||||||||||||
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TLS412033VCOREBOARDTOBO1 | Infineon Technologies |
Description: TLS4120 3.3V CORE-BOARDPackaging: Bulk Voltage - Output: 5V Voltage - Input: 6V ~ 35V Current - Output: 2A Frequency - Switching: 2.2MHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: TLS412033 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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IPP082N10NF2SAKMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 46µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V |
на замовлення 1978 шт: термін постачання 21-31 дні (днів) |
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IFX25001MEV33 | Infineon Technologies |
Description: IC REG LIN 3.3V 400MA SOT223-4 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||||
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IPI126N10N3G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 46µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE7241EXUMA2 | Infineon Technologies |
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Supplier Device Package: PG-DSO-20-27 Ratio - Input:Output: 1:2 Current - Output (Max): 1.2A Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V Voltage - Load: 9V ~ 18V Rds On (Typ): 240mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: Relay, Solenoid Driver Interface: SPI Number of Outputs: 2 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad Features: Slew Rate Controlled Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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D251K12BXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 255A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TD780N18KOFHPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DKPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 23500A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 775 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 1.8 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MB90F349ESPMC-GS-N2E1 | Infineon Technologies |
Description: IC MCU 16BIT 256KB FLASH 100LQFP Packaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 256KB (256K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 16x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 100-LQFP (14x14) Part Status: Obsolete Number of I/O: 82 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CHL8225G-00CRT | Infineon Technologies |
Description: IC REG CTRLR GPU 2OUT 40QFNPackaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 3.3V Operating Temperature: 0°C ~ 85°C Applications: Controller, GPU Core Power Supplier Device Package: 40-QFN (6x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CHL8225G-07CRT | Infineon Technologies |
Description: IC REG CTRLR GPU 2OUT 40QFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CHL8225G-05CRT | Infineon Technologies |
Description: IC REG CTRLR GPU 2OUT 40QFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CHL8225G-02CRT | Infineon Technologies |
Description: IC REG CTRLR GPU 2OUT 40QFNPackaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 3.3V Operating Temperature: 0°C ~ 85°C (TA) Applications: Controller, GPU Core Power Supplier Device Package: 40-QFN (6x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CHL8225G-06CRT | Infineon Technologies |
Description: IC REG CTRLR GPU 2OUT 40QFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BA595E6359HTMA1 | Infineon Technologies | Description: RF DIODE PIN 50V SC79-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BA595E6359HTMA1 | Infineon Technologies | Description: RF DIODE PIN 50V SC79-2 |
товару немає в наявності |
Мінімальне замовлення: 5624 шт В кошику од. на суму грн. | ||||||||||||||
| BA885E7631HTMA1 | Infineon Technologies |
Description: RF DIODE PIN 50V PG-SC79-2-1 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz Resistance @ If, F: 7Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SC79-2-1 Grade: Automotive Current - Max: 50 mA Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IPC313N10N3RX1SA2 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Bulk Part Status: Active |
на замовлення 76076 шт: термін постачання 21-31 дні (днів) |
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SAK-XC2797X-200F100LAB | Infineon Technologies |
Description: IC MCU 16/32B 1.6MB FLSH 176LQFPDigiKey Programmable: Not Verified Number of I/O: 150 Part Status: Active Supplier Device Package: PG-LQFP-176-12 Peripherals: I²S, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16/32-Bit Data Converters: A/D 30x10b Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 138K x 8 Program Memory Size: 1.6MB (1.6M x 8) Speed: 100MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Exposed Pad Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SAKXC2297H136F80LABKXUMA2 | Infineon Technologies |
Description: 16-BIT C166 MMC - XC2200 FAMILY Packaging: Bulk Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 1.088MB (1.088M x 8) RAM Size: 80K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 40x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: DMA, I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-176-12 Part Status: Active Number of I/O: 150 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IAUS240N08S5N019ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 240A HSOG-8Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 160µA Supplier Device Package: PG-HSOG-8-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 2061 шт: термін постачання 21-31 дні (днів) |
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IPTG014N10NM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 37A/366A HSOG-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IPTG014N10NM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 37A/366A HSOG-8Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HSOG-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V |
на замовлення 2691 шт: термін постачання 21-31 дні (днів) |
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| BSM50GD120DLCBPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 85A AG-ECONO2A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A NTC Thermistor: No Supplier Device Package: AG-ECONO2A Part Status: Last Time Buy Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 84 µA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BSM50GD120DN2BPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 72A AG-ECONO2A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A NTC Thermistor: No Supplier Device Package: AG-ECONO2A Part Status: Last Time Buy Current - Collector (Ic) (Max): 72 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MB90F882PMC-GSE1 | Infineon Technologies |
Description: IC MCU 16BIT 256KB FLASH 100LQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 33MHz Program Memory Size: 256KB (256K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 20x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: I2C, Serial I/O, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S26KS512SDPBHN020 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Part Status: Active Memory Interface: HyperBus Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | ||||||||||||||
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S26KS512SDABHI030 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Memory Interface: HyperBus Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | ||||||||||||||
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S26KS512SDPBHB020 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAQualification: AEC-Q100 Grade: Automotive Memory Organization: 64M x 8 Access Time: 96 ns Memory Interface: HyperBus Part Status: Active Supplier Device Package: 24-FBGA (6x8) Memory Format: FLASH Clock Frequency: 166 MHz Technology: FLASH - NOR Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 24-VBGA Packaging: Tray DigiKey Programmable: Not Verified |
на замовлення 1332 шт: термін постачання 21-31 дні (днів) |
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ETD580N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULE |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ETD580N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULE |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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ETT510N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 515 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.6 kV |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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ETD630N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 635 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.6 kV |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ETD630N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 635 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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ETT580N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULEVoltage - Off State: 1.6 kV Current - On State (It (RMS)) (Max): 700 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 586 A Number of SCRs, Diodes: 2 SCRs Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Series Connection - All SCRs Operating Temperature: -40°C ~ 135°C (TC) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ETT630N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 635 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.6 kV |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ETD510N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 515 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.6 kV |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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IPB65R190CFD7AATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO263-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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IPB65R190CFD7AATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO263-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 915 шт: термін постачання 21-31 дні (днів) |
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IPWS65R035CFD7AXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 63A TO247-3-41Qualification: AEC-Q101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3-41 Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Power Dissipation (Max): 305W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKZ50N65ES5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 80A TO247-4Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 62 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 36ns/294ns Switching Energy: 770µJ (on), 880µJ (off) Test Condition: 400V, 25A, 23.1Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 274 W |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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FP50R12W2T7BPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 50A AG-EASY2BPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 8 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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| FP50R12W2T7PB11BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY2B-2 Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V Current - Collector Cutoff (Max): 8 µA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: AG-EASY2B NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Three Phase Inverter Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| F415MR12W2M1B76BOMA1 | Infineon Technologies | Description: LOW POWER EASY AG-EASY2B-2 |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| PXP1600CPQG003XUMA1 | Infineon Technologies | Description: IC CONTROLLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
1EDI3031ASXUMA1 | Infineon Technologies |
Description: DGT ISO 5.7KV 1CH GT DVR DSO20Qualification: AEC-Q100 Voltage - Output Supply: 3V ~ 5.5V Number of Channels: 1 Grade: Automotive Pulse Width Distortion (Max): 20ns Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Common Mode Transient Immunity (Min): 150kV/µs Rise / Fall Time (Typ): 55ns, 45ns (Max) Supplier Device Package: PG-DSO-20-91 Approval Agency: UL, VDE Voltage - Isolation: 5700Vrms Current - Output High, Low: 20A, 20A Technology: Magnetic Coupling Current - Peak Output: 12A Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 20-BFSOP (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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1EDI3031ASXUMA1 | Infineon Technologies |
Description: DGT ISO 5.7KV 1CH GT DVR DSO20Qualification: AEC-Q100 Voltage - Output Supply: 3V ~ 5.5V Number of Channels: 1 Grade: Automotive Pulse Width Distortion (Max): 20ns Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Common Mode Transient Immunity (Min): 150kV/µs Rise / Fall Time (Typ): 55ns, 45ns (Max) Supplier Device Package: PG-DSO-20-91 Approval Agency: UL, VDE Voltage - Isolation: 5700Vrms Current - Output High, Low: 20A, 20A Technology: Magnetic Coupling Current - Peak Output: 12A Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 20-BFSOP (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| IPI45N06S4L08AKSA2 |
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на замовлення 11000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 742+ | 28.52 грн |
| IPI45N06S4-09AKSA2 |
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Виробник: Infineon Technologies
Description: IPI45N06 - 55V-60V N-CHANNEL AUT
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 34µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: IPI45N06 - 55V-60V N-CHANNEL AUT
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 34µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
на замовлення 97500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 359+ | 61.74 грн |
| IPB45N06S409ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO263-3
Description: MOSFET N-CH 60V 45A TO263-3
товару немає в наявності
В кошику
од. на суму грн.
| BGA751L7E6327 |
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Виробник: Infineon Technologies
Description: IC AMP GPS 170MHZ-1.675GHZ TSLP7
Supplier Device Package: PG-TSLP-7-1
Test Frequency: 470MHz
P1dB: -10dBm
Noise Figure: 1.3dB
Current - Supply: 5.85mA
Gain: 15.75dB
Voltage - Supply: 1.5V ~ 3.6V
RF Type: General Purpose
Frequency: 170MHz ~ 1.675GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
Description: IC AMP GPS 170MHZ-1.675GHZ TSLP7
Supplier Device Package: PG-TSLP-7-1
Test Frequency: 470MHz
P1dB: -10dBm
Noise Figure: 1.3dB
Current - Supply: 5.85mA
Gain: 15.75dB
Voltage - Supply: 1.5V ~ 3.6V
RF Type: General Purpose
Frequency: 170MHz ~ 1.675GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
на замовлення 30441 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 545+ | 36.54 грн |
| BGSA11GN10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SPST 5GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPST
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.35dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 14dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 75dBm
Part Status: Active
Description: IC RF SWITCH SPST 5GHZ TSNP10-1
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPST
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.35dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 14dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 75dBm
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| EVAL-M1-301FTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IMC301A-F064
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMC301A-F064
Supplied Contents: Board(s), Cable(s), Accessories
Primary Attributes: 3.3V, 5V Supply
Secondary Attributes: On-Board LEDs, Test Points
Embedded: Yes, MCU
Description: EVAL BOARD FOR IMC301A-F064
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMC301A-F064
Supplied Contents: Board(s), Cable(s), Accessories
Primary Attributes: 3.3V, 5V Supply
Secondary Attributes: On-Board LEDs, Test Points
Embedded: Yes, MCU
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4901.29 грн |
| ESD133B1W01005E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 13VC P/PGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: DVI, HDMI, Telecom, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 13VC P/PGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: DVI, HDMI, Telecom, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
на замовлення 2604 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.72 грн |
| 36+ | 8.51 грн |
| 100+ | 5.27 грн |
| 500+ | 3.61 грн |
| 1000+ | 3.18 грн |
| 2000+ | 2.81 грн |
| S25FL256SDSBHI210 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O
Supplier Device Package: 24-BGA (8x6)
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O
Supplier Device Package: 24-BGA (8x6)
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.89 грн |
| MB95F714MNPMC-G-SNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 80LQFP
Description: IC MCU 8BIT 20KB FLASH 80LQFP
товару немає в наявності
В кошику
од. на суму грн.
| IST026N10NM5AUMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Description: TRENCH >=100V PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IST026N10NM5AUMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Description: TRENCH >=100V PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
на замовлення 1663 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 366.53 грн |
| 10+ | 234.76 грн |
| 100+ | 167.51 грн |
| 500+ | 130.30 грн |
| 1000+ | 126.19 грн |
| ISC0802NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 55.73 грн |
| ISC0802NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
Description: MOSFET N-CH 100V 22A/150A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 92µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5190 pF @ 50 V
на замовлення 7324 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 198.38 грн |
| 10+ | 123.27 грн |
| 100+ | 84.72 грн |
| 500+ | 64.04 грн |
| 1000+ | 60.41 грн |
| BTS3028SDL |
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Виробник: Infineon Technologies
Description: BTS3028 - HITFET, AUTOMOTIVE SMA
Description: BTS3028 - HITFET, AUTOMOTIVE SMA
товару немає в наявності
Мінімальне замовлення: 237 шт
В кошику
од. на суму грн.
| TLS412033VCOREBOARDTOBO1 |
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Виробник: Infineon Technologies
Description: TLS4120 3.3V CORE-BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 6V ~ 35V
Current - Output: 2A
Frequency - Switching: 2.2MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS412033
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: TLS4120 3.3V CORE-BOARD
Packaging: Bulk
Voltage - Output: 5V
Voltage - Input: 6V ~ 35V
Current - Output: 2A
Frequency - Switching: 2.2MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS412033
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2452.58 грн |
| IPP082N10NF2SAKMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
на замовлення 1978 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 176.68 грн |
| 50+ | 83.05 грн |
| 100+ | 74.59 грн |
| 500+ | 56.09 грн |
| 1000+ | 51.61 грн |
| IFX25001MEV33 |
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Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 400MA SOT223-4
Description: IC REG LIN 3.3V 400MA SOT223-4
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| IPI126N10N3G |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
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| TLE7241EXUMA2 |
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Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-20-27
Ratio - Input:Output: 1:2
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Voltage - Load: 9V ~ 18V
Rds On (Typ): 240mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: Relay, Solenoid Driver
Interface: SPI
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-20-27
Ratio - Input:Output: 1:2
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Voltage - Load: 9V ~ 18V
Rds On (Typ): 240mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: Relay, Solenoid Driver
Interface: SPI
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
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| D251K12BXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 255A
Description: DIODE GEN PURP 1.2KV 255A
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| TD780N18KOFHPSA1 |
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Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 775 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.8 kV
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 775 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.8 kV
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| MB90F349ESPMC-GS-N2E1 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
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| CHL8225G-00CRT |
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Виробник: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, GPU Core Power
Supplier Device Package: 40-QFN (6x6)
Description: IC REG CTRLR GPU 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, GPU Core Power
Supplier Device Package: 40-QFN (6x6)
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| CHL8225G-07CRT |
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Виробник: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Description: IC REG CTRLR GPU 2OUT 40QFN
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| CHL8225G-05CRT |
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Виробник: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Description: IC REG CTRLR GPU 2OUT 40QFN
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| CHL8225G-02CRT |
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Виробник: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, GPU Core Power
Supplier Device Package: 40-QFN (6x6)
Description: IC REG CTRLR GPU 2OUT 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, GPU Core Power
Supplier Device Package: 40-QFN (6x6)
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| CHL8225G-06CRT |
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Виробник: Infineon Technologies
Description: IC REG CTRLR GPU 2OUT 40QFN
Description: IC REG CTRLR GPU 2OUT 40QFN
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| BA595E6359HTMA1 |
Виробник: Infineon Technologies
Description: RF DIODE PIN 50V SC79-2
Description: RF DIODE PIN 50V SC79-2
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| BA595E6359HTMA1 |
Виробник: Infineon Technologies
Description: RF DIODE PIN 50V SC79-2
Description: RF DIODE PIN 50V SC79-2
товару немає в наявності
Мінімальне замовлення: 5624 шт
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| BA885E7631HTMA1 |
Виробник: Infineon Technologies
Description: RF DIODE PIN 50V PG-SC79-2-1
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2-1
Grade: Automotive
Current - Max: 50 mA
Qualification: AEC-Q101
Description: RF DIODE PIN 50V PG-SC79-2-1
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2-1
Grade: Automotive
Current - Max: 50 mA
Qualification: AEC-Q101
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| IPC313N10N3RX1SA2 |
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на замовлення 76076 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 74+ | 277.11 грн |
| SAK-XC2797X-200F100LAB |
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Виробник: Infineon Technologies
Description: IC MCU 16/32B 1.6MB FLSH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 150
Part Status: Active
Supplier Device Package: PG-LQFP-176-12
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 30x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 138K x 8
Program Memory Size: 1.6MB (1.6M x 8)
Speed: 100MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Bulk
Description: IC MCU 16/32B 1.6MB FLSH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 150
Part Status: Active
Supplier Device Package: PG-LQFP-176-12
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 30x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 138K x 8
Program Memory Size: 1.6MB (1.6M x 8)
Speed: 100MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Bulk
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| SAKXC2297H136F80LABKXUMA2 |
Виробник: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 40x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.088MB (1.088M x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 40x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-176-12
Part Status: Active
Number of I/O: 150
DigiKey Programmable: Not Verified
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| IAUS240N08S5N019ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 240A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 240A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 160µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9264 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2061 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 341.73 грн |
| 10+ | 218.27 грн |
| 100+ | 155.24 грн |
| 500+ | 128.10 грн |
| IPTG014N10NM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 140.17 грн |
| IPTG014N10NM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Description: MOSFET N-CH 100V 37A/366A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
на замовлення 2691 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 368.08 грн |
| 10+ | 236.70 грн |
| 100+ | 169.83 грн |
| 500+ | 155.05 грн |
| BSM50GD120DLCBPSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 85A AG-ECONO2A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Description: IGBT MODULE 1200V 85A AG-ECONO2A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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| BSM50GD120DN2BPSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 72A AG-ECONO2A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Description: IGBT MODULE 1200V 72A AG-ECONO2A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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| MB90F882PMC-GSE1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 33MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 20x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, Serial I/O, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 33MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 20x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, Serial I/O, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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| S26KS512SDPBHN020 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 1690 шт
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| S26KS512SDABHI030 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 1690 шт
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| S26KS512SDPBHB020 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Qualification: AEC-Q100
Grade: Automotive
Memory Organization: 64M x 8
Access Time: 96 ns
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Qualification: AEC-Q100
Grade: Automotive
Memory Organization: 64M x 8
Access Time: 96 ns
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 1332 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 891.92 грн |
| 10+ | 796.87 грн |
| 25+ | 771.88 грн |
| 50+ | 706.76 грн |
| 100+ | 689.29 грн |
| 338+ | 659.14 грн |
| 676+ | 644.75 грн |
| ETD580N16P60HPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Description: SCR MODULE 1.6KV 700A MODULE
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 13704.24 грн |
| ETD580N16P60HPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Description: SCR MODULE 1.6KV 700A MODULE
товару немає в наявності
Мінімальне замовлення: 2 шт
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| ETT510N16P60HPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 13999.48 грн |
| ETD630N16P60HPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 17871.31 грн |
| ETD630N16P60HPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
товару немає в наявності
Мінімальне замовлення: 2 шт
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| ETT580N16P60HPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 586 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: SCR MODULE 1.6KV 700A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 586 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 15176.57 грн |
| ETT630N16P60HPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 16111.88 грн |
| ETD510N16P60HPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 13424.11 грн |
| IPB65R190CFD7AATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IPB65R190CFD7AATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 915 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 309.96 грн |
| 10+ | 196.55 грн |
| 100+ | 138.68 грн |
| 500+ | 110.93 грн |
| IPWS65R035CFD7AXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 63A TO247-3-41
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Description: MOSFET N-CH 650V 63A TO247-3-41
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
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В кошику
од. на суму грн.
| IKZ50N65ES5XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 96+ | 212.59 грн |
| FP50R12W2T7BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 50A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Description: IGBT MODULE 1200V 50A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3610.29 грн |
| 15+ | 2525.37 грн |
| FP50R12W2T7PB11BPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Current - Collector Cutoff (Max): 8 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: LOW POWER EASY AG-EASY2B-2
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Current - Collector Cutoff (Max): 8 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| F415MR12W2M1B76BOMA1 |
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Description: LOW POWER EASY AG-EASY2B-2
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 22357.64 грн |
| PXP1600CPQG003XUMA1 |
Виробник: Infineon Technologies
Description: IC CONTROLLER
Description: IC CONTROLLER
товару немає в наявності
В кошику
од. на суму грн.
| 1EDI3031ASXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 1EDI3031ASXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
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