Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148598) > Сторінка 432 з 2477
Фото | Назва | Виробник | Інформація |
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TLE8457ASJXUMA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
PBM99024/1MSAP1C | Infineon Technologies |
Description: INFINEON PBM990241MS - TSO10-3 Packaging: Bulk Part Status: Active |
на замовлення 58800 шт: термін постачання 21-31 дні (днів) |
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BCR191WH6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Resistors Included: R1 and R2 |
на замовлення 216000 шт: термін постачання 21-31 дні (днів) |
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BCR196WH6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Supplier Device Package: PG-SOT323-3 Part Status: Active Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
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MA11144833NDSA1 | Infineon Technologies | Description: A-PCB MA111 W44833 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PEF22822ELV2.2 | Infineon Technologies |
Description: IC 10BASES-D DIGITAL CHIP Packaging: Bulk |
на замовлення 175 шт: термін постачання 21-31 дні (днів) |
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IRF7316 | Infineon Technologies |
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на замовлення 112 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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ISC015N04NM5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 206A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 60µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC015N04NM5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 206A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 60µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V |
на замовлення 7688 шт: термін постачання 21-31 дні (днів) |
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IPB039N10N3GE8197ATMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 160µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STT5000N14P110XPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: 1-Phase Controller - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 4780 A Voltage - Off State: 1.4 kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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S29GL128N11FFI010 | Infineon Technologies |
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на замовлення 179 шт: термін постачання 21-31 дні (днів) |
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FS300R12OE4B81BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: AG-ECONOPP IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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IPDQ60R010S7XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPDQ60R010S7XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V |
на замовлення 273 шт: термін постачання 21-31 дні (днів) |
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IPDQ60R010S7AXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPDQ60R010S7AXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V Qualification: AEC-Q101 |
на замовлення 156 шт: термін постачання 21-31 дні (днів) |
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PEF20470HV1.1 | Infineon Technologies |
Description: SWITI MTSI-L SWITCHING IC Packaging: Bulk Part Status: Active |
на замовлення 87 шт: термін постачання 21-31 дні (днів) |
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PEF2047HV1.2 | Infineon Technologies |
Description: MTSS (MEMORY TIME SWITCH LARGE) Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 66 шт: термін постачання 21-31 дні (днів) |
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IR35412MTRPBFAUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 3.3V Operating Temperature: -20°C ~ 85°C (TA) Applications: Controller, DDR, Intel VR12, AMD SVI Supplier Device Package: 40-QFN (6x6) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BF 1009SR E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SOT-143R Current Rating (Amps): 25mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: N-Channel Gain: 22dB Technology: MOSFET Noise Figure: 1.4dB Supplier Device Package: PG-SOT-143R-3D Part Status: Active Voltage - Rated: 12 V Voltage - Test: 9 V |
на замовлення 2730 шт: термін постачання 21-31 дні (днів) |
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BF1009SRE6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SOT-143R Current Rating (Amps): 25mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: N-Channel Gain: 22dB Technology: MOSFET (Metal Oxide) Noise Figure: 1.4dB Supplier Device Package: PG-SOT-143R-3D Voltage - Rated: 12 V Voltage - Test: 9 V |
на замовлення 6360 шт: термін постачання 21-31 дні (днів) |
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CY7C1148KV18-400BZXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II+ Clock Frequency: 400 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Active Memory Interface: Parallel Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
на замовлення 122 шт: термін постачання 21-31 дні (днів) |
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0209085P001 | Infineon Technologies | Description: 0209085P001 |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||
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BGA231L7E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: Galileo, GLONASS, GPS Voltage - Supply: 1.5V ~ 3.6V Gain: 16dB Current - Supply: 4.4mA Noise Figure: 0.75dB P1dB: -5dBm Test Frequency: 1.55GHz ~ 1.615GHz Supplier Device Package: PG-TSLP-7-1 Part Status: Active |
на замовлення 5946 шт: термін постачання 21-31 дні (днів) |
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BGA728L7E6327 | Infineon Technologies |
Description: IC RF AMP GPS 1575MHZ TSLP7-1 Packaging: Bulk Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 1575MHz RF Type: GPS Voltage - Supply: 1.5V ~ 3.3V Gain: 20dB Current - Supply: 3.3mA Noise Figure: 0.75dB P1dB: -15.5dBm Test Frequency: 1.575GHz Supplier Device Package: PG-TSLP-7-1 Part Status: Active |
на замовлення 7917 шт: термін постачання 21-31 дні (днів) |
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BGA123N6E6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: Beidou, Galileo, GLONASS, GPS Voltage - Supply: 1.1V ~ 2.8V Gain: 21.2dB Current - Supply: 1.65mA Noise Figure: 0.75dB P1dB: -12dBm Test Frequency: 1.575GHz Supplier Device Package: PG-TSNP-6-2 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGA123N6E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: Beidou, Galileo, GLONASS, GPS Voltage - Supply: 1.1V ~ 2.8V Gain: 21.2dB Current - Supply: 1.65mA Noise Figure: 0.75dB P1dB: -12dBm Test Frequency: 1.575GHz Supplier Device Package: PG-TSNP-6-2 Part Status: Active |
на замовлення 13568 шт: термін постачання 21-31 дні (днів) |
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BGA125N6E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.164GHz ~ 1.3GHz RF Type: Beidou, Galileo, GLONASS, GPS Voltage - Supply: 1.1V ~ 2.8V Gain: 22.2dB Current - Supply: 1.45mA Noise Figure: 0.8dB P1dB: -12dBm Test Frequency: 1.164GHz ~ 1.3GHz Supplier Device Package: PG-TSNP-6-2 |
на замовлення 8337 шт: термін постачання 21-31 дні (днів) |
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IFX25001TSV85AKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 400mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO220-3-1 Voltage - Output (Min/Fixed): 10V PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA |
на замовлення 23124 шт: термін постачання 21-31 дні (днів) |
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IFX25001TSV85 | Infineon Technologies |
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на замовлення 9318 шт: термін постачання 21-31 дні (днів) |
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IM240M6Y1BAKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 23-DIP Module (0.573", 14.55mm) Mounting Type: Through Hole Configuration: 3 Phase Inverter Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BF5020WE6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-82A, SOT-343 Current Rating (Amps): 100nA Mounting Type: Surface Mount Configuration: N-Channel Gain: 32dB Technology: MOSFET Noise Figure: 1.2dB Supplier Device Package: PG-SOT343-4-1 Part Status: Active Voltage - Rated: 8 V Voltage - Test: 5 V Current - Test: 10 mA |
на замовлення 2615 шт: термін постачання 21-31 дні (днів) |
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BF 5020 E6327 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Current Rating (Amps): 25mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: N-Channel Gain: 26dB Technology: MOSFET (Metal Oxide) Noise Figure: 1.2dB Supplier Device Package: PG-SOT-143-3D Voltage - Rated: 8 V Voltage - Test: 5 V Current - Test: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BF 5020R E6327 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-143R Current Rating (Amps): 25mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: N-Channel Gain: 26dB Technology: MOSFET (Metal Oxide) Noise Figure: 1.2dB Supplier Device Package: PG-SOT-143R-3D Voltage - Rated: 8 V Voltage - Test: 5 V Current - Test: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD14N06S280ATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 4V @ 14µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE92104232QXXUMA1 | Infineon Technologies |
![]() Features: Charge Pump Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: Analog, Logic, PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 40Ohm Applications: DC Motors, General Purpose Supplier Device Package: PG-VQFN-48-29 Fault Protection: Short Circuit Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 4567 шт: термін постачання 21-31 дні (днів) |
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EVAL6EDL04N02PRTOBO1 | Infineon Technologies |
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на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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AUIRS2336STR | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Grade: Automotive Part Status: Obsolete DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL01GT11TFIV20 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
на замовлення 947 шт: термін постачання 21-31 дні (днів) |
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BGSC2341ML10E6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-XFLGA Mounting Type: Surface Mount Function: Digitally Tunable Capacitor, SPDT Frequency: 400MHz ~ 3.8GHz RF Type: General Purpose Secondary Attributes: MIPI Interface Supplier Device Package: PG-TSLP-10-2 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGSC2341ML10E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-XFLGA Mounting Type: Surface Mount Function: Digitally Tunable Capacitor, SPDT Frequency: 400MHz ~ 3.8GHz RF Type: General Purpose Secondary Attributes: MIPI Interface Supplier Device Package: PG-TSLP-10-2 Part Status: Active |
на замовлення 6629 шт: термін постачання 21-31 дні (днів) |
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REFFRIDGED111TMOSTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: IMD111T-6F040 Supplied Contents: Board(s) Primary Attributes: Compressor Embedded: No Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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SAF-XC878-13FFA5VAC | Infineon Technologies |
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на замовлення 496 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C1525V18-200BZXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 8M x 9 DigiKey Programmable: Not Verified |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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IPP65R190CFD7AAKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO220-3 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 668 шт: термін постачання 21-31 дні (днів) |
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IPP65R280C6XKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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IPP65R125C7 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V Power Dissipation (Max): 101W (Tc) Vgs(th) (Max) @ Id: 4V @ 440µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP65R420CFDXKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Power Dissipation (Max): 83.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 340µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
на замовлення 333 шт: термін постачання 21-31 дні (днів) |
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IPP65R190CFD7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 700µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
на замовлення 888 шт: термін постачання 21-31 дні (днів) |
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IPP65R155CFD7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V |
на замовлення 157 шт: термін постачання 21-31 дні (днів) |
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IPP65R090CFD7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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IPP65R060CFD7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 860µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V |
на замовлення 304 шт: термін постачання 21-31 дні (днів) |
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BTT60302ERBXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 32mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-31 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTT60501ERAXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-11 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS70302EPAXUMA1 | Infineon Technologies |
![]() Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 14.5mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 7550 шт: термін постачання 21-31 дні (днів) |
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BTS70081EPPXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 8.8mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 11A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 8316 шт: термін постачання 21-31 дні (днів) |
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BTS70081EPAXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 10A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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BTS5012SDA | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FF450R08A03P2XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Type: IGBT Configuration: Half Bridge Voltage - Isolation: 2500Vrms Current: 450 A Voltage: 750 V |
на замовлення 174 шт: термін постачання 21-31 дні (днів) |
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TLE8457ASJXUMA1 |
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Виробник: Infineon Technologies
Description: TLE8457 - AUTOMOTIVE LIN TRANSCE
Description: TLE8457 - AUTOMOTIVE LIN TRANSCE
товару немає в наявності
В кошику
од. на суму грн.
PBM99024/1MSAP1C |
Виробник: Infineon Technologies
Description: INFINEON PBM990241MS - TSO10-3
Packaging: Bulk
Part Status: Active
Description: INFINEON PBM990241MS - TSO10-3
Packaging: Bulk
Part Status: Active
на замовлення 58800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
260+ | 83.99 грн |
BCR191WH6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
на замовлення 216000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6571+ | 3.78 грн |
BCR196WH6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7123+ | 2.97 грн |
MA11144833NDSA1 |
Виробник: Infineon Technologies
Description: A-PCB MA111 W44833
Description: A-PCB MA111 W44833
товару немає в наявності
В кошику
од. на суму грн.
PEF22822ELV2.2 |
на замовлення 175 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 989.53 грн |
IRF7316 |
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Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 4.9A 8-SOIC
Description: MOSFET 2P-CH 30V 4.9A 8-SOIC
на замовлення 112 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
ISC015N04NM5ATMA1 |
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Виробник: Infineon Technologies
Description: 40V 1.5M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 206A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Description: 40V 1.5M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 206A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 38.85 грн |
ISC015N04NM5ATMA1 |
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Виробник: Infineon Technologies
Description: 40V 1.5M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 206A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Description: 40V 1.5M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 206A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
на замовлення 7688 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 144.49 грн |
10+ | 88.76 грн |
100+ | 59.91 грн |
500+ | 44.62 грн |
1000+ | 40.88 грн |
2000+ | 37.74 грн |
IPB039N10N3GE8197ATMA1 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 160µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 160µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
STT5000N14P110XPSA1 |
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Виробник: Infineon Technologies
Description: THYRISTOR/THYRISTORMODULES 110 M
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 4780 A
Voltage - Off State: 1.4 kV
Description: THYRISTOR/THYRISTORMODULES 110 M
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 4780 A
Voltage - Off State: 1.4 kV
товару немає в наявності
В кошику
од. на суму грн.
S29GL128N11FFI010 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Description: IC FLASH 128MBIT PARALLEL 64FBGA
на замовлення 179 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
86+ | 425.99 грн |
FS300R12OE4B81BPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 57471.43 грн |
IPDQ60R010S7XTMA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
IPDQ60R010S7XTMA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
на замовлення 273 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1620.33 грн |
10+ | 1248.03 грн |
25+ | 1170.00 грн |
100+ | 1017.51 грн |
250+ | 979.14 грн |
IPDQ60R010S7AXTMA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Qualification: AEC-Q101
Description: AUTOMOTIVE PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
IPDQ60R010S7AXTMA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Qualification: AEC-Q101
Description: AUTOMOTIVE PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
Qualification: AEC-Q101
на замовлення 156 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1679.88 грн |
10+ | 1295.12 грн |
25+ | 1214.62 грн |
100+ | 1056.82 грн |
PEF20470HV1.1 |
Виробник: Infineon Technologies
Description: SWITI MTSI-L SWITCHING IC
Packaging: Bulk
Part Status: Active
Description: SWITI MTSI-L SWITCHING IC
Packaging: Bulk
Part Status: Active
на замовлення 87 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 2681.77 грн |
PEF2047HV1.2 |
Виробник: Infineon Technologies
Description: MTSS (MEMORY TIME SWITCH LARGE)
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: MTSS (MEMORY TIME SWITCH LARGE)
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 66 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 3147.55 грн |
IR35412MTRPBFAUMA1 |
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Виробник: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI
Supplier Device Package: 40-QFN (6x6)
Description: INT. POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI
Supplier Device Package: 40-QFN (6x6)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 158.27 грн |
BF 1009SR E6327 |
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Виробник: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-143R
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET
Noise Figure: 1.4dB
Supplier Device Package: PG-SOT-143R-3D
Part Status: Active
Voltage - Rated: 12 V
Voltage - Test: 9 V
Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-143R
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET
Noise Figure: 1.4dB
Supplier Device Package: PG-SOT-143R-3D
Part Status: Active
Voltage - Rated: 12 V
Voltage - Test: 9 V
на замовлення 2730 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2730+ | 9.53 грн |
BF1009SRE6327HTSA1 |
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Виробник: Infineon Technologies
Description: RF MOSFET 9V SOT143R
Packaging: Bulk
Package / Case: SOT-143R
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.4dB
Supplier Device Package: PG-SOT-143R-3D
Voltage - Rated: 12 V
Voltage - Test: 9 V
Description: RF MOSFET 9V SOT143R
Packaging: Bulk
Package / Case: SOT-143R
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.4dB
Supplier Device Package: PG-SOT-143R-3D
Voltage - Rated: 12 V
Voltage - Test: 9 V
на замовлення 6360 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2077+ | 10.64 грн |
CY7C1148KV18-400BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 122 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1016.18 грн |
0209085P001 |
Виробник: Infineon Technologies
Description: 0209085P001
Description: 0209085P001
на замовлення 18 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BGA231L7E6327 |
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Виробник: Infineon Technologies
Description: IC AMP GALI 1.55-1.615GHZ TSLP7
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 16dB
Current - Supply: 4.4mA
Noise Figure: 0.75dB
P1dB: -5dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
Description: IC AMP GALI 1.55-1.615GHZ TSLP7
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 16dB
Current - Supply: 4.4mA
Noise Figure: 0.75dB
P1dB: -5dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
на замовлення 5946 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
866+ | 26.49 грн |
BGA728L7E6327 |
Виробник: Infineon Technologies
Description: IC RF AMP GPS 1575MHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.75dB
P1dB: -15.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
Description: IC RF AMP GPS 1575MHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.75dB
P1dB: -15.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
на замовлення 7917 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
416+ | 52.11 грн |
BGA123N6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP BEIDOU 1.55-1.615GHZ TSNP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 2.8V
Gain: 21.2dB
Current - Supply: 1.65mA
Noise Figure: 0.75dB
P1dB: -12dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
Description: IC AMP BEIDOU 1.55-1.615GHZ TSNP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 2.8V
Gain: 21.2dB
Current - Supply: 1.65mA
Noise Figure: 0.75dB
P1dB: -12dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
BGA123N6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP BEIDOU 1.55-1.615GHZ TSNP
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 2.8V
Gain: 21.2dB
Current - Supply: 1.65mA
Noise Figure: 0.75dB
P1dB: -12dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
Description: IC AMP BEIDOU 1.55-1.615GHZ TSNP
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 2.8V
Gain: 21.2dB
Current - Supply: 1.65mA
Noise Figure: 0.75dB
P1dB: -12dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
на замовлення 13568 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.79 грн |
14+ | 23.09 грн |
25+ | 21.71 грн |
100+ | 18.63 грн |
250+ | 17.59 грн |
500+ | 16.84 грн |
1000+ | 15.88 грн |
5000+ | 14.42 грн |
BGA125N6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP BEIDOU 1.164-1.3GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.3GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 2.8V
Gain: 22.2dB
Current - Supply: 1.45mA
Noise Figure: 0.8dB
P1dB: -12dBm
Test Frequency: 1.164GHz ~ 1.3GHz
Supplier Device Package: PG-TSNP-6-2
Description: IC AMP BEIDOU 1.164-1.3GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.3GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 2.8V
Gain: 22.2dB
Current - Supply: 1.45mA
Noise Figure: 0.8dB
P1dB: -12dBm
Test Frequency: 1.164GHz ~ 1.3GHz
Supplier Device Package: PG-TSNP-6-2
на замовлення 8337 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 29.37 грн |
13+ | 24.16 грн |
25+ | 22.78 грн |
100+ | 19.55 грн |
250+ | 18.45 грн |
500+ | 17.67 грн |
1000+ | 16.65 грн |
5000+ | 15.12 грн |
IFX25001TSV85AKSA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-3-1
Voltage - Output (Min/Fixed): 10V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Description: IC REG LINEAR VOLTAGE REG
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-3-1
Voltage - Output (Min/Fixed): 10V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
на замовлення 23124 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
630+ | 35.53 грн |
IFX25001TSV85 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR VOLTAGE REG
Description: IC REG LINEAR VOLTAGE REG
на замовлення 9318 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
682+ | 36.40 грн |
IM240M6Y1BAKMA1 |
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Виробник: Infineon Technologies
Description: IPM MICRO 3PH DRIVER DIP23
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Configuration: 3 Phase Inverter
Part Status: Obsolete
Description: IPM MICRO 3PH DRIVER DIP23
Packaging: Tube
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Configuration: 3 Phase Inverter
Part Status: Obsolete
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BF5020WE6327 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 100nA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 32dB
Technology: MOSFET
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 100nA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 32dB
Technology: MOSFET
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
на замовлення 2615 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2615+ | 11.11 грн |
BF 5020 E6327 |
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Виробник: Infineon Technologies
Description: RF MOSFET 5V SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT-143-3D
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Description: RF MOSFET 5V SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT-143-3D
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
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BF 5020R E6327 |
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Виробник: Infineon Technologies
Description: RF MOSFET 5V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT-143R-3D
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Description: RF MOSFET 5V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT-143R-3D
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
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IPD14N06S280ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 20.54 грн |
TLE92104232QXXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Features: Charge Pump
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC HALF BRIDGE DRIVER 48VQFN
Features: Charge Pump
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 4567 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 252.46 грн |
10+ | 182.79 грн |
25+ | 167.67 грн |
100+ | 141.72 грн |
250+ | 134.27 грн |
500+ | 129.78 грн |
1000+ | 124.02 грн |
EVAL6EDL04N02PRTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL-6EDL04N02PR TO SHOW THE FUN
Description: EVAL-6EDL04N02PR TO SHOW THE FUN
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 11560.66 грн |
AUIRS2336STR |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S29GL01GT11TFIV20 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 947 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1061.43 грн |
10+ | 948.58 грн |
25+ | 918.98 грн |
91+ | 823.51 грн |
182+ | 802.96 грн |
273+ | 791.08 грн |
546+ | 758.39 грн |
BGSC2341ML10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: ANTENNA DEVICES PG-TSLP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Function: Digitally Tunable Capacitor, SPDT
Frequency: 400MHz ~ 3.8GHz
RF Type: General Purpose
Secondary Attributes: MIPI Interface
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
Description: ANTENNA DEVICES PG-TSLP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Function: Digitally Tunable Capacitor, SPDT
Frequency: 400MHz ~ 3.8GHz
RF Type: General Purpose
Secondary Attributes: MIPI Interface
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
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BGSC2341ML10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: ANTENNA DEVICES PG-TSLP-10
Packaging: Cut Tape (CT)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Function: Digitally Tunable Capacitor, SPDT
Frequency: 400MHz ~ 3.8GHz
RF Type: General Purpose
Secondary Attributes: MIPI Interface
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
Description: ANTENNA DEVICES PG-TSLP-10
Packaging: Cut Tape (CT)
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Function: Digitally Tunable Capacitor, SPDT
Frequency: 400MHz ~ 3.8GHz
RF Type: General Purpose
Secondary Attributes: MIPI Interface
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
на замовлення 6629 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 54.78 грн |
10+ | 37.31 грн |
25+ | 33.48 грн |
100+ | 27.51 грн |
250+ | 25.64 грн |
500+ | 24.52 грн |
1000+ | 23.20 грн |
2500+ | 22.24 грн |
REFFRIDGED111TMOSTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMD111T-6F040
Supplied Contents: Board(s)
Primary Attributes: Compressor
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR IMD111T-6F040
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMD111T-6F040
Supplied Contents: Board(s)
Primary Attributes: Compressor
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 14818.79 грн |
SAF-XC878-13FFA5VAC |
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Виробник: Infineon Technologies
Description: 8051 COMPATIBLE 8-BIT MCU
Description: 8051 COMPATIBLE 8-BIT MCU
на замовлення 496 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
CY7C1525V18-200BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 8M x 9
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 8M x 9
DigiKey Programmable: Not Verified
на замовлення 49 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 9795.83 грн |
IPP65R190CFD7AAKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
на замовлення 668 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 214.35 грн |
50+ | 105.04 грн |
100+ | 102.14 грн |
IPP65R280C6XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: MOSFET N-CH 650V 13.8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
273+ | 83.26 грн |
IPP65R125C7 |
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Виробник: Infineon Technologies
Description: IPP65R125 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Description: IPP65R125 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
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IPP65R420CFDXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 333 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
333+ | 84.40 грн |
IPP65R190CFD7XKSA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
на замовлення 888 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 236.58 грн |
50+ | 115.97 грн |
100+ | 108.88 грн |
500+ | 83.12 грн |
IPP65R155CFD7XKSA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
на замовлення 157 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 221.50 грн |
50+ | 169.18 грн |
100+ | 145.02 грн |
IPP65R090CFD7XKSA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 427.91 грн |
50+ | 217.70 грн |
100+ | 198.91 грн |
IPP65R060CFD7XKSA1 |
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Виробник: Infineon Technologies
Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
на замовлення 304 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 503.33 грн |
50+ | 273.03 грн |
100+ | 256.76 грн |
BTT60302ERBXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
BTT60501ERAXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
BTS70302EPAXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 14.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 14.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 7550 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 128.61 грн |
10+ | 91.28 грн |
25+ | 82.99 грн |
100+ | 69.36 грн |
250+ | 65.29 грн |
500+ | 62.84 грн |
1000+ | 59.82 грн |
BTS70081EPPXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8.8mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8.8mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 8316 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 132.58 грн |
10+ | 93.96 грн |
25+ | 85.47 грн |
100+ | 71.46 грн |
250+ | 67.30 грн |
500+ | 64.79 грн |
1000+ | 61.69 грн |
BTS70081EPAXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 63.15 грн |
BTS5012SDA |
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Виробник: Infineon Technologies
Description: BTS5012 - PROFET - SMART HIGH SI
Description: BTS5012 - PROFET - SMART HIGH SI
товару немає в наявності
В кошику
од. на суму грн.
FF450R08A03P2XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 450 A
Voltage: 750 V
Description: IGBT MODULE
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 450 A
Voltage: 750 V
на замовлення 174 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 10877.11 грн |