Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148583) > Сторінка 441 з 2477
Фото | Назва | Виробник | Інформація |
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DDB6U180N16RRB11BPSA2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A NTC Thermistor: No Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 515 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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XMC1302T038X0064ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 38TSSOP Packaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Number of I/O: 26 DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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XMC14S2Q040X0064AAXUMA1 | Infineon Technologies |
Description: 32-BIT INDUSTRIAL MICROCONTROLLE Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 14894 шт: термін постачання 21-31 дні (днів) |
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FS650R08A4P2BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 375A NTC Thermistor: Yes Supplier Device Package: AG-HYBDC6I-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 375 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 65 nF @ 50 V |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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FF600R12IP4PBPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: AG-PRIME2 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IRLR3915 | Infineon Technologies | Description: IRLR3915 |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
IPW60R0706P | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FP150R12N3T7B16BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-ECONO3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 12 µA Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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FS500R17OE4DB81BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A NTC Thermistor: Yes Supplier Device Package: AG-ECONOPP IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 500 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 40 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC846UE6727HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SC74-6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 622496 шт: термін постачання 21-31 дні (днів) |
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BGAV1A10E6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 10-UFQFN Mounting Type: Surface Mount Frequency: 3.4GHz ~ 3.8GHz RF Type: LTE Voltage - Supply: 1.8V Gain: 3.3dB ~ 17.4dB Current - Supply: 4mA Noise Figure: 1.3dB ~ 3.2dB Test Frequency: 3.5GHz Part Status: Not For New Designs |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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S25FL032P0XNFV013M | Infineon Technologies |
Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tray Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (5x6) Part Status: Obsolete Write Cycle Time - Word, Page: 5µs, 3ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FL032P0XNFV003M | Infineon Technologies |
Description: IC FLASH 32MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Obsolete Write Cycle Time - Word, Page: 5µs, 3ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR3820AMTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 15-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 14A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 300kHz Voltage - Input (Max): 21V Topology: Buck Supplier Device Package: PQFN (5x6) Synchronous Rectifier: Yes Voltage - Output (Max): 12V Voltage - Input (Min): 2.5V Voltage - Output (Min/Fixed): 0.6V Part Status: Obsolete |
на замовлення 1143 шт: термін постачання 21-31 дні (днів) |
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BSZ146N10LS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 23µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
на замовлення 10846 шт: термін постачання 21-31 дні (днів) |
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TLE9202EDXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 2.9V ~ 5.5V Rds On (Typ): 100mOhm LS, 100mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 6A Technology: Power MOSFET Voltage - Load: 5V ~ 28V Supplier Device Package: PG-DSO-36-72 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Obsolete Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE5109A16DE2210XUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Analog Voltage Termination Style: Gull Wing Voltage - Supply: 5V Linearity: ±0.1° Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-TDSO-16-2 Rotation Angle - Electrical, Mechanical: 0° ~ 180° Output Signal: Cosine, Sine Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 123952 шт: термін постачання 21-31 дні (днів) |
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FS820R08A6P2LMBPSA1 | Infineon Technologies |
Description: IGBT MODULE 820A HYBRID PK DRIVE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: 175°C (TJ) NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Obsolete Current - Collector (Ic) (Max): 820 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PEB4265-2VV1.1 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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S25FL116K0XMFN043 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ISC046N04NM5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 17µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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ISC046N04NM5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 17µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V |
на замовлення 14250 шт: термін постачання 21-31 дні (днів) |
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ISC058N04NM5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V Power Dissipation (Max): 3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 13µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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ISC058N04NM5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V Power Dissipation (Max): 3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 13µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V |
на замовлення 27353 шт: термін постачання 21-31 дні (днів) |
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F3L300R12MT4B22BOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1550 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 19 nF @ 25 V |
на замовлення 753 шт: термін постачання 21-31 дні (днів) |
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PEF 2055 N V2.1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Function: PCM Interface Controller Interface: ISDN, PCM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Current - Supply: 9.5mA Supplier Device Package: P-LCC-44-1 Part Status: Obsolete Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PEF 2054 N V2.1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Function: PCM Interface Controller Interface: ISDN, PCM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Current - Supply: 9.5mA Supplier Device Package: P-LCC-44-1 Part Status: Obsolete Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IR3585BMSY02TRP | Infineon Technologies |
Description: IC REG BUCK 48VQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IQE050N08NM5CGATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 49µA Supplier Device Package: PG-TTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IQE050N08NM5CGATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 49µA Supplier Device Package: PG-TTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V |
на замовлення 9687 шт: термін постачання 21-31 дні (днів) |
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IQE030N06NM5CGATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 50µA Supplier Device Package: PG-TTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IQE030N06NM5CGATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 50µA Supplier Device Package: PG-TTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V |
на замовлення 140 шт: термін постачання 21-31 дні (днів) |
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IKN03N60RC2ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 38 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A Supplier Device Package: PG-SOT223-3-1 Td (on/off) @ 25°C: 7ns/77.5ns Switching Energy: 62µJ (on), 44µJ (off) Test Condition: 400V, 3A, 49Ohm, 15V Gate Charge: 18 nC Part Status: Active Current - Collector (Ic) (Max): 5.7 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 9 A Power - Max: 6.3 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKN03N60RC2ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 38 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A Supplier Device Package: PG-SOT223-3-1 Td (on/off) @ 25°C: 7ns/77.5ns Switching Energy: 62µJ (on), 44µJ (off) Test Condition: 400V, 3A, 49Ohm, 15V Gate Charge: 18 nC Part Status: Active Current - Collector (Ic) (Max): 5.7 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 9 A Power - Max: 6.3 W |
на замовлення 2721 шт: термін постачання 21-31 дні (днів) |
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IKN01N60RC2ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 59.5 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A Supplier Device Package: PG-SOT223-3 Td (on/off) @ 25°C: 5.6ns/80ns Switching Energy: 25.1µJ (on), 13.5µJ (off) Test Condition: 400V, 1A, 49Ohm, 15V Gate Charge: 9 nC Part Status: Active Current - Collector (Ic) (Max): 2.2 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 3 A Power - Max: 5.1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKN01N60RC2ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 59.5 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A Supplier Device Package: PG-SOT223-3 Td (on/off) @ 25°C: 5.6ns/80ns Switching Energy: 25.1µJ (on), 13.5µJ (off) Test Condition: 400V, 1A, 49Ohm, 15V Gate Charge: 9 nC Part Status: Active Current - Collector (Ic) (Max): 2.2 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 3 A Power - Max: 5.1 W |
на замовлення 2983 шт: термін постачання 21-31 дні (днів) |
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PEB3081HV1.4 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 44-QFP Mounting Type: Surface Mount Function: S / T Bus Interface Transceiver Interface: IOM-2, ISDN, SCI Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.3V Current - Supply: 30mA Supplier Device Package: P-MQFP-44 Part Status: Active Number of Circuits: 1 |
на замовлення 594 шт: термін постачання 21-31 дні (днів) |
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IPA60R600P7 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPA60R280P6 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 430µA Supplier Device Package: PG-TO220-3-111 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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B161OLMHAXP | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 2K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-80-1 Part Status: Active Number of I/O: 63 |
на замовлення 536 шт: термін постачання 21-31 дні (днів) |
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SAF-C161K-LM3VHA | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-80-1 Part Status: Active Number of I/O: 63 DigiKey Programmable: Not Verified |
на замовлення 1190 шт: термін постачання 21-31 дні (днів) |
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C161KLMHABXQ | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 1K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-80-1 Part Status: Active Number of I/O: 63 DigiKey Programmable: Not Verified |
на замовлення 909 шт: термін постачання 21-31 дні (днів) |
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F505CALMCAXP | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 44-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 1.25K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C500 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V Connectivity: CANbus, EBI/EMI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-44-2 Part Status: Active Number of I/O: 34 DigiKey Programmable: Not Verified |
на замовлення 496 шт: термін постачання 21-31 дні (днів) |
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FF600R12KT4HOSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A NTC Thermistor: No Supplier Device Package: AG-62MM IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 38 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FZ2400R17HP4B29BOSA2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2400A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 4800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 15500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 195 nF @ 25 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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FS450R17OP4BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: AG-ECONOPP-2-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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BTS70081EPADAUGHBRDTOBO1 | Infineon Technologies |
![]() Packaging: Box Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTS7008-1EPA Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BTS70082EPADAUGHBRDTOBO1 | Infineon Technologies |
![]() Packaging: Box Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTS7008-2EPA Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BTS70401EPADAUGHBRDTOBO1 | Infineon Technologies |
![]() Packaging: Box Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTS7040-1EPA Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BTS70802EPADAUGHBRDTOBO1 | Infineon Technologies |
![]() Packaging: Box Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTS7080-2EPA Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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FS75R12W2T7BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 13 µA Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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FS75R12KT4B15BOSA1 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AUIRFN8459TR | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Supplier Device Package: PQFN (5x6) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRFN8459TR | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Supplier Device Package: PQFN (5x6) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FS35R12W1T7B11BOMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: AG-EASY1B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 7.3 µA Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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FS35R12YT3BOMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 225 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
на замовлення 232 шт: термін постачання 21-31 дні (днів) |
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FS35R12W1T7BOMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY1B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 7.3 µA Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FS35R12KE3GBPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 200 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FS35R12KT3BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 210 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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FS35R12U1T4BPSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. |
DDB6U180N16RRB11BPSA2 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 8823.14 грн |
XMC1302T038X0064ABXUMA1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 101.13 грн |
XMC14S2Q040X0064AAXUMA1 |
Виробник: Infineon Technologies
Description: 32-BIT INDUSTRIAL MICROCONTROLLE
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: 32-BIT INDUSTRIAL MICROCONTROLLE
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 14894 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
30+ | 744.40 грн |
FS650R08A4P2BPSA1 |
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Виробник: Infineon Technologies
Description: HYBRID PACK 1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBDC6I-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 50 V
Description: HYBRID PACK 1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 375A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBDC6I-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 50 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 25601.20 грн |
FF600R12IP4PBPSA1 |
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Виробник: Infineon Technologies
Description: PP IHM I XHP 1 7KV AG-PRIME2-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: PP IHM I XHP 1 7KV AG-PRIME2-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 28247.26 грн |
IRLR3915 |
Виробник: Infineon Technologies
Description: IRLR3915
Description: IRLR3915
на замовлення 88 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
IPW60R0706P |
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Виробник: Infineon Technologies
Description: 600V COOLMOS N-CHANNEL POWER MOS
Packaging: Bulk
Part Status: Active
Description: 600V COOLMOS N-CHANNEL POWER MOS
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
FP150R12N3T7B16BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO3B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 13047.30 грн |
FS500R17OE4DB81BPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40 nF @ 25 V
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BC846UE6727HTSA1 |
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Виробник: Infineon Technologies
Description: TRANS 2NPN 65V 100MA PG-SC74-6
Packaging: Bulk
Part Status: Active
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2NPN 65V 100MA PG-SC74-6
Packaging: Bulk
Part Status: Active
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 622496 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5392+ | 4.55 грн |
BGAV1A10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF AMP LTE 3.4GHZ-3.8GHZ 10AT
Packaging: Bulk
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
RF Type: LTE
Voltage - Supply: 1.8V
Gain: 3.3dB ~ 17.4dB
Current - Supply: 4mA
Noise Figure: 1.3dB ~ 3.2dB
Test Frequency: 3.5GHz
Part Status: Not For New Designs
Description: IC RF AMP LTE 3.4GHZ-3.8GHZ 10AT
Packaging: Bulk
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.8GHz
RF Type: LTE
Voltage - Supply: 1.8V
Gain: 3.3dB ~ 17.4dB
Current - Supply: 4mA
Noise Figure: 1.3dB ~ 3.2dB
Test Frequency: 3.5GHz
Part Status: Not For New Designs
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
717+ | 32.07 грн |
S25FL032P0XNFV013M |
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (5x6)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (5x6)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
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S25FL032P0XNFV003M |
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
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од. на суму грн.
IR3820AMTRPBF |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 14A PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 14A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Obsolete
Description: IC REG BUCK ADJ 14A PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 14A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Obsolete
на замовлення 1143 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 261.03 грн |
10+ | 213.50 грн |
25+ | 200.01 грн |
100+ | 170.15 грн |
250+ | 159.46 грн |
500+ | 151.83 грн |
1000+ | 142.21 грн |
BSZ146N10LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Description: MOSFET N-CH 100V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
на замовлення 10846 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 94.70 грн |
10+ | 67.90 грн |
100+ | 53.35 грн |
500+ | 42.04 грн |
1000+ | 37.49 грн |
2000+ | 35.53 грн |
TLE9202EDXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 6A DSO36-72
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.9V ~ 5.5V
Rds On (Typ): 100mOhm LS, 100mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 6A
Technology: Power MOSFET
Voltage - Load: 5V ~ 28V
Supplier Device Package: PG-DSO-36-72
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Description: IC HALF BRIDGE DRVR 6A DSO36-72
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.9V ~ 5.5V
Rds On (Typ): 100mOhm LS, 100mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 6A
Technology: Power MOSFET
Voltage - Load: 5V ~ 28V
Supplier Device Package: PG-DSO-36-72
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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TLE5109A16DE2210XUMA1 |
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Виробник: Infineon Technologies
Description: IC ANGLE SENSOR 5.0 V
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-2
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC ANGLE SENSOR 5.0 V
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Termination Style: Gull Wing
Voltage - Supply: 5V
Linearity: ±0.1°
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16-2
Rotation Angle - Electrical, Mechanical: 0° ~ 180°
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 123952 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
81+ | 273.07 грн |
FS820R08A6P2LMBPSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 820A HYBRID PK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 820 A
Description: IGBT MODULE 820A HYBRID PK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 820 A
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PEB4265-2VV1.1 |
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Виробник: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
Part Status: Active
Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
Part Status: Active
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S25FL116K0XMFN043 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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од. на суму грн.
ISC046N04NM5ATMA1 |
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Виробник: Infineon Technologies
Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 27.87 грн |
10000+ | 26.14 грн |
ISC046N04NM5ATMA1 |
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Виробник: Infineon Technologies
Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
Description: 40V 4.6M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 20 V
на замовлення 14250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 111.41 грн |
10+ | 67.97 грн |
100+ | 45.24 грн |
500+ | 33.30 грн |
1000+ | 30.35 грн |
2000+ | 27.87 грн |
ISC058N04NM5ATMA1 |
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Виробник: Infineon Technologies
Description: 40V 5.8M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Description: 40V 5.8M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 23.14 грн |
ISC058N04NM5ATMA1 |
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Виробник: Infineon Technologies
Description: 40V 5.8M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Description: 40V 5.8M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
на замовлення 27353 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 92.31 грн |
10+ | 55.87 грн |
100+ | 36.87 грн |
500+ | 26.92 грн |
1000+ | 24.45 грн |
2000+ | 22.37 грн |
F3L300R12MT4B22BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 450A 1550W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Description: IGBT MOD 1200V 450A 1550W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 753 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 17036.69 грн |
PEF 2055 N V2.1 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 44LCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Number of Circuits: 1
Description: IC TELECOM INTERFACE 44LCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Number of Circuits: 1
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PEF 2054 N V2.1 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 44LCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Number of Circuits: 1
Description: IC TELECOM INTERFACE 44LCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Number of Circuits: 1
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од. на суму грн.
IQE050N08NM5CGATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 87.12 грн |
IQE050N08NM5CGATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
на замовлення 9687 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 261.03 грн |
10+ | 163.92 грн |
100+ | 114.39 грн |
500+ | 87.50 грн |
1000+ | 81.12 грн |
2000+ | 78.73 грн |
IQE030N06NM5CGATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
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IQE030N06NM5CGATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
на замовлення 140 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 224.42 грн |
10+ | 157.56 грн |
100+ | 112.22 грн |
IKN03N60RC2ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT 600V 5.7A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
Description: IGBT 600V 5.7A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
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IKN03N60RC2ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT 600V 5.7A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
Description: IGBT 600V 5.7A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 3A
Supplier Device Package: PG-SOT223-3-1
Td (on/off) @ 25°C: 7ns/77.5ns
Switching Energy: 62µJ (on), 44µJ (off)
Test Condition: 400V, 3A, 49Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 6.3 W
на замовлення 2721 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 77.19 грн |
10+ | 46.52 грн |
100+ | 30.40 грн |
500+ | 22.04 грн |
1000+ | 19.94 грн |
IKN01N60RC2ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT 600V 2.2A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59.5 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 5.6ns/80ns
Switching Energy: 25.1µJ (on), 13.5µJ (off)
Test Condition: 400V, 1A, 49Ohm, 15V
Gate Charge: 9 nC
Part Status: Active
Current - Collector (Ic) (Max): 2.2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 3 A
Power - Max: 5.1 W
Description: IGBT 600V 2.2A SOT223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59.5 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 5.6ns/80ns
Switching Energy: 25.1µJ (on), 13.5µJ (off)
Test Condition: 400V, 1A, 49Ohm, 15V
Gate Charge: 9 nC
Part Status: Active
Current - Collector (Ic) (Max): 2.2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 3 A
Power - Max: 5.1 W
товару немає в наявності
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од. на суму грн.
IKN01N60RC2ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT 600V 2.2A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59.5 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 5.6ns/80ns
Switching Energy: 25.1µJ (on), 13.5µJ (off)
Test Condition: 400V, 1A, 49Ohm, 15V
Gate Charge: 9 nC
Part Status: Active
Current - Collector (Ic) (Max): 2.2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 3 A
Power - Max: 5.1 W
Description: IGBT 600V 2.2A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59.5 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 5.6ns/80ns
Switching Energy: 25.1µJ (on), 13.5µJ (off)
Test Condition: 400V, 1A, 49Ohm, 15V
Gate Charge: 9 nC
Part Status: Active
Current - Collector (Ic) (Max): 2.2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 3 A
Power - Max: 5.1 W
на замовлення 2983 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 65.26 грн |
10+ | 39.24 грн |
100+ | 25.45 грн |
500+ | 18.32 грн |
1000+ | 16.52 грн |
PEB3081HV1.4 |
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Виробник: Infineon Technologies
Description: SBCX-X S/T BUS INTERFACE CIRCUIT
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: S / T Bus Interface Transceiver
Interface: IOM-2, ISDN, SCI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 30mA
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of Circuits: 1
Description: SBCX-X S/T BUS INTERFACE CIRCUIT
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: S / T Bus Interface Transceiver
Interface: IOM-2, ISDN, SCI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 30mA
Supplier Device Package: P-MQFP-44
Part Status: Active
Number of Circuits: 1
на замовлення 594 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
22+ | 1002.72 грн |
IPA60R600P7 |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Description: POWER FIELD-EFFECT TRANSISTOR, 6
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IPA60R280P6 |
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Виробник: Infineon Technologies
Description: 600V, N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Description: 600V, N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
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B161OLMHAXP |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
на замовлення 536 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
40+ | 568.75 грн |
SAF-C161K-LM3VHA |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 1190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
26+ | 945.42 грн |
C161KLMHABXQ |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 909 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
37+ | 654.16 грн |
F505CALMCAXP |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT ROMLESS 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT ROMLESS 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
на замовлення 496 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
48+ | 464.65 грн |
FF600R12KT4HOSA1 |
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Виробник: Infineon Technologies
Description: 62MM POWER MODULE 1200 V WITH IG
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
Description: 62MM POWER MODULE 1200 V WITH IG
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
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FZ2400R17HP4B29BOSA2 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 4800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 4800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 15500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 195 nF @ 25 V
Description: IGBT MODULE 1700V 4800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 4800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 15500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 195 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 106360.76 грн |
FS450R17OP4BPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO AG-ECONOPP-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: MEDIUM POWER ECONO AG-ECONOPP-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP-2-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 40638.02 грн |
BTS70081EPADAUGHBRDTOBO1 |
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Виробник: Infineon Technologies
Description: PROFET +2 12V BTS7008-1EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-1EPA
Part Status: Active
Description: PROFET +2 12V BTS7008-1EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-1EPA
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3763.38 грн |
BTS70082EPADAUGHBRDTOBO1 |
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Виробник: Infineon Technologies
Description: PROFET +2 12V BTS7008-2EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-2EPA
Part Status: Active
Description: PROFET +2 12V BTS7008-2EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-2EPA
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3763.38 грн |
BTS70401EPADAUGHBRDTOBO1 |
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Виробник: Infineon Technologies
Description: PROFET +2 12V BTS7040-1EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7040-1EPA
Part Status: Active
Description: PROFET +2 12V BTS7040-1EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7040-1EPA
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3499.97 грн |
BTS70802EPADAUGHBRDTOBO1 |
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Виробник: Infineon Technologies
Description: PROFET +2 12V BTS7080-2EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7080-2EPA
Part Status: Active
Description: PROFET +2 12V BTS7080-2EPA DAUGH
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7080-2EPA
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3659.13 грн |
FS75R12W2T7BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4745.41 грн |
AUIRFN8459TR |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 50A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 50A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
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од. на суму грн.
AUIRFN8459TR |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 50A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 50A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
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FS35R12W1T7B11BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7.3 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7.3 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3262.82 грн |
FS35R12YT3BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 225 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 225 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 2688.07 грн |
FS35R12W1T7BOMA1 |
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Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7.3 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
Description: LOW POWER EASY AG-EASY1B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7.3 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
товару немає в наявності
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од. на суму грн.
FS35R12KE3GBPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
товару немає в наявності
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од. на суму грн.
FS35R12KT3BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 10537.32 грн |
FS35R12U1T4BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 70A 250W
Description: IGBT MOD 1200V 70A 250W
товару немає в наявності
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од. на суму грн.