Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123014) > Сторінка 439 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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ETD580N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULE |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ETD580N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULE |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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ETT510N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 515 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.6 kV |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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ETD630N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 635 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.6 kV |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ETD630N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 635 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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ETT580N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULEVoltage - Off State: 1.6 kV Current - On State (It (RMS)) (Max): 700 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 586 A Number of SCRs, Diodes: 2 SCRs Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Series Connection - All SCRs Operating Temperature: -40°C ~ 135°C (TC) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ETT630N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 635 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.6 kV |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ETD510N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 515 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 1.6 kV |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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IPB65R190CFD7AATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO263-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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IPB65R190CFD7AATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO263-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 919 шт: термін постачання 21-31 дні (днів) |
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IPWS65R035CFD7AXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 63A TO247-3-41Qualification: AEC-Q101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3-41 Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Power Dissipation (Max): 305W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKZ50N65ES5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 80A TO247-4Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 62 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 36ns/294ns Switching Energy: 770µJ (on), 880µJ (off) Test Condition: 400V, 25A, 23.1Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 274 W |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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FP50R12W2T7BPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 50A AG-EASY2BPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 8 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FP50R12W2T7PB11BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY2B-2 Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V Current - Collector Cutoff (Max): 8 µA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: AG-EASY2B NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Three Phase Inverter Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| F415MR12W2M1B76BOMA1 | Infineon Technologies | Description: LOW POWER EASY AG-EASY2B-2 |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| PXP1600CPQG003XUMA1 | Infineon Technologies | Description: IC CONTROLLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1EDI3031ASXUMA1 | Infineon Technologies |
Description: DGT ISO 5.7KV 1CH GT DVR DSO20Qualification: AEC-Q100 Voltage - Output Supply: 3V ~ 5.5V Number of Channels: 1 Grade: Automotive Pulse Width Distortion (Max): 20ns Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Common Mode Transient Immunity (Min): 150kV/µs Rise / Fall Time (Typ): 55ns, 45ns (Max) Supplier Device Package: PG-DSO-20-91 Approval Agency: UL, VDE Voltage - Isolation: 5700Vrms Current - Output High, Low: 20A, 20A Technology: Magnetic Coupling Current - Peak Output: 12A Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 20-BFSOP (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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1EDI3031ASXUMA1 | Infineon Technologies |
Description: DGT ISO 5.7KV 1CH GT DVR DSO20Qualification: AEC-Q100 Voltage - Output Supply: 3V ~ 5.5V Number of Channels: 1 Grade: Automotive Pulse Width Distortion (Max): 20ns Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Common Mode Transient Immunity (Min): 150kV/µs Rise / Fall Time (Typ): 55ns, 45ns (Max) Supplier Device Package: PG-DSO-20-91 Approval Agency: UL, VDE Voltage - Isolation: 5700Vrms Current - Output High, Low: 20A, 20A Technology: Magnetic Coupling Current - Peak Output: 12A Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 20-BFSOP (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1EDI3021ASXUMA1 | Infineon Technologies |
Description: DGT ISO 5.7KV 1CH GT DVR DSO20Qualification: AEC-Q100 Voltage - Output Supply: 3V ~ 5.5V Number of Channels: 1 Grade: Automotive Pulse Width Distortion (Max): 20ns Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Common Mode Transient Immunity (Min): 150kV/µs Rise / Fall Time (Typ): 55ns, 45ns (Max) Supplier Device Package: PG-DSO-20-91 Approval Agency: UL, VDE Voltage - Isolation: 5700Vrms Current - Output High, Low: 20A, 20A Technology: Magnetic Coupling Current - Peak Output: 12A Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 20-BFSOP (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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1EDI3021ASXUMA1 | Infineon Technologies |
Description: DGT ISO 5.7KV 1CH GT DVR DSO20Qualification: AEC-Q100 Voltage - Output Supply: 3V ~ 5.5V Number of Channels: 1 Grade: Automotive Pulse Width Distortion (Max): 20ns Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Common Mode Transient Immunity (Min): 150kV/µs Rise / Fall Time (Typ): 55ns, 45ns (Max) Supplier Device Package: PG-DSO-20-91 Approval Agency: UL, VDE Voltage - Isolation: 5700Vrms Current - Output High, Low: 20A, 20A Technology: Magnetic Coupling Current - Peak Output: 12A Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 20-BFSOP (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
на замовлення 1021 шт: термін постачання 21-31 дні (днів) |
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1EDI3020ASXUMA1 | Infineon Technologies |
Description: DGT ISO 5.7KV 1CH GT DVR DSO20Voltage - Output Supply: 3V ~ 5.5V Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 20ns Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Common Mode Transient Immunity (Min): 150kV/µs Rise / Fall Time (Typ): 55ns, 45ns (Max) Supplier Device Package: PG-DSO-20-91 Approval Agency: UL, VDE Voltage - Isolation: 5700Vrms Current - Output High, Low: 12A, 12A Technology: Magnetic Coupling Current - Peak Output: 12A Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 20-BFSOP (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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1EDI3020ASXUMA1 | Infineon Technologies |
Description: DGT ISO 5.7KV 1CH GT DVR DSO20Voltage - Output Supply: 3V ~ 5.5V Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 20ns Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Common Mode Transient Immunity (Min): 150kV/µs Rise / Fall Time (Typ): 55ns, 45ns (Max) Supplier Device Package: PG-DSO-20-91 Approval Agency: UL, VDE Voltage - Isolation: 5700Vrms Current - Output High, Low: 12A, 12A Technology: Magnetic Coupling Current - Peak Output: 12A Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 20-BFSOP (0.295", 7.50mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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IPAN60R650CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 9.9A TO220Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.5V @ 200µA Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
на замовлення 691 шт: термін постачання 21-31 дні (днів) |
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SAK-XC2264-56F66LAC | Infineon Technologies |
Description: 16 BIT C166 MICROXC2200 FAMILY (DigiKey Programmable: Not Verified Number of I/O: 75 Supplier Device Package: PG-LQFP-100-3 Peripherals: DMA, I²S, POR, PWM, WDT Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 16/32-Bit Data Converters: A/D 8x8/10b Core Processor: C166SV2 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 34K x 8 Program Memory Size: 448KB (448K x 8) Speed: 66MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Exposed Pad Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPL65R095CFD7AUMA1 | Infineon Technologies |
Description: COOLMOS CFD7 SUPERJUNCTION MOSFEInput Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-VSON-4 Vgs(th) (Max) @ Id: 4.5V @ 630µA Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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IPL65R095CFD7AUMA1 | Infineon Technologies |
Description: COOLMOS CFD7 SUPERJUNCTION MOSFEInput Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-VSON-4 Vgs(th) (Max) @ Id: 4.5V @ 630µA Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Cut Tape (CT) |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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TLE7469GV53AUMA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V/5V DSO-12Qualification: AEC-Q100 Grade: Automotive Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): -, 0.6V @ 215mA PSRR: 60dB (100Hz), 60dB (100Hz) Part Status: Active Control Features: Inhibit, Reset, Watchdog Voltage - Output (Min/Fixed): 3.3V, 5V Supplier Device Package: PG-DSO-12-11 Number of Regulators: 2 Voltage - Input (Max): 45V Current - Quiescent (Iq): 55 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 200mA, 215mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 5988 шт: термін постачання 21-31 дні (днів) |
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T1080N04TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 600V 2000A DO-200ABCurrent - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz Current - Gate Trigger (Igt) (Max): 200 mA Current - Hold (Ih) (Max): 200 mA Structure: Single Operating Temperature: -40°C ~ 140°C Mounting Type: Clamp On Package / Case: DO-200AA, A-PUK Packaging: Tray Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 2000 A Part Status: Obsolete Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 1078 A Number of SCRs, Diodes: 1 SCR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF6898MTRPBF | Infineon Technologies |
Description: IRF6898 - 12V-300V N-CHANNEL POWInput Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±16V Supplier Device Package: DirectFET™ Isometric MX Vgs(th) (Max) @ Id: 2.1V @ 100µA Power Dissipation (Max): 2.8W (Ta), 78W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MX Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IFX80471SKV50 | Infineon Technologies |
Description: IFX80471 - SWITCHING REGULATORSPackaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 360kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 5V ~ 60V Supplier Device Package: PG-DSO-14 Synchronous Rectifier: Yes Control Features: Enable, Reset Output Phases: 1 Duty Cycle (Max): 100% Clock Sync: Yes Part Status: Active Number of Outputs: 1 |
на замовлення 7257 шт: термін постачання 21-31 дні (днів) |
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| IFX80471SKV | Infineon Technologies |
Description: IFX80471 - SWITCHING REGULATORSPackaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 360kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 5V ~ 60V Supplier Device Package: PG-DSO-14 Synchronous Rectifier: Yes Control Features: Enable, Reset Output Phases: 1 Duty Cycle (Max): 100% Clock Sync: Yes Part Status: Active Number of Outputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IFX80471SKVXUMA1 | Infineon Technologies |
Description: IC REG CTRLR BUCK 14DSOPackaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 360kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 5V ~ 60V Supplier Device Package: PG-DSO-14-1 Synchronous Rectifier: Yes Control Features: Enable, Reset Output Phases: 1 Duty Cycle (Max): 100% Clock Sync: Yes Part Status: Obsolete Number of Outputs: 1 |
на замовлення 8665 шт: термін постачання 21-31 дні (днів) |
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ISZ0803NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 7.7A/37A TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 18µA Supplier Device Package: PG-TSDSON-8-26 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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ISZ0803NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 7.7A/37A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 18µA Supplier Device Package: PG-TSDSON-8-26 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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| ISC0803NLSATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TDSON-8 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
| ISC0803NLSATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TDSON-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPW50R399CPFKSA1 | Infineon Technologies |
Description: MOSFET N-CH 560V 9A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 330µA Supplier Device Package: PG-TO247-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V |
на замовлення 5520 шт: термін постачання 21-31 дні (днів) |
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IPD220N06L3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 30A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 11µA Supplier Device Package: PG-TO252-3-311 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IPD088N06N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 34µA Supplier Device Package: PG-TO252-3-311 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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IPD048N06L3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 58µA Supplier Device Package: PG-TO252-3-311 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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IRF7524D1TRPBF | Infineon Technologies |
Description: MOSFET P-CH 20V 1.7A MICRO8Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: Micro8™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IAUS300N08S5N012TATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 300A HDSOP-16-2Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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TLT125D0EJXUMA1 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 8DSO-52Voltage - Output (Min/Fixed): 2V Voltage - Output (Max): 14V Supplier Device Package: PG-DSO-8-52 Number of Regulators: 1 Voltage - Input (Max): 40V Current - Quiescent (Iq): 110 µA Output Configuration: Positive Operating Temperature: -40°C ~ 160°C (TJ) Current - Output: 250mA Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) Grade: Automotive Qualification: AEC-Q100 Current - Supply (Max): 25 mA Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO) Voltage Dropout (Max): 0.5V @ 250mA PSRR: 80dB (100Hz) Part Status: Active Control Features: Enable, Power Good, Soft Start |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLT125D0EJXUMA1 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 8DSO-52Qualification: AEC-Q100 Grade: Automotive Current - Supply (Max): 25 mA Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO) Voltage Dropout (Max): 0.5V @ 250mA PSRR: 80dB (100Hz) Part Status: Active Control Features: Enable, Power Good, Soft Start Voltage - Output (Min/Fixed): 2V Voltage - Output (Max): 14V Supplier Device Package: PG-DSO-8-52 Number of Regulators: 1 Voltage - Input (Max): 40V Current - Quiescent (Iq): 110 µA Output Configuration: Positive Operating Temperature: -40°C ~ 160°C (TJ) Current - Output: 250mA Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2040 шт: термін постачання 21-31 дні (днів) |
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TLE9879QTW40XUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 48TQFPPackage / Case: 48-TQFP Exposed Pad Packaging: Tape & Reel (TR) Number of I/O: 10 Part Status: Active Supplier Device Package: 48-TQFP (7x7) Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Connectivity: LINbus, SPI, SSC, UART/USART Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V Core Size: 32-Bit Single-Core Data Converters: A/D 5x10b Sigma-Delta Core Processor: ARM® Cortex®-M3 EEPROM Size: 4K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 175°C (TJ) RAM Size: 6K x 8 Program Memory Size: 128KB (128K x 8) Speed: 40MHz Mounting Type: Surface Mount DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE9879QTW40XUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 48TQFPNumber of I/O: 10 Part Status: Active Supplier Device Package: 48-TQFP (7x7) Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Connectivity: LINbus, SPI, SSC, UART/USART Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V Core Size: 32-Bit Single-Core Data Converters: A/D 5x10b Sigma-Delta Core Processor: ARM® Cortex®-M3 EEPROM Size: 4K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 175°C (TJ) RAM Size: 6K x 8 Program Memory Size: 128KB (128K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 48-TQFP Exposed Pad Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
на замовлення 7433 шт: термін постачання 21-31 дні (днів) |
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FS300R17OE4B81BPSA1 | Infineon Technologies |
Description: MEDIUM POWER ECONOInput Capacitance (Cies) @ Vce: 24.3 nF @ 25 V Current - Collector Cutoff (Max): 3 mA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 300 A Part Status: Active Supplier Device Package: AG-ECONOPP NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray IGBT Type: Trench Field Stop |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||||||||||
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FS450R12OE4B81BPSA1 | Infineon Technologies |
Description: MEDIUM POWER ECONOConfiguration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Input Capacitance (Cies) @ Vce: 27.9 nF @ 25 V Current - Collector Cutoff (Max): 3 mA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 450 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: AG-ECONOPP NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A Operating Temperature: -40°C ~ 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FF2MR12KM1HOSA1 | Infineon Technologies |
Description: MOSFET 2N-CH 1200V 500A AG-62MMPart Status: Obsolete Supplier Device Package: AG-62MM Vgs(th) (Max) @ Id: 5.15V @ 224mA Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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IDK05G120C5XTMA1 | Infineon Technologies |
Description: DIODE SIC 1.2KV 19.1A TO263-1Current - Reverse Leakage @ Vr: 33 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO263-2-1 Current - Average Rectified (Io): 19.1A Capacitance @ Vr, F: 301pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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IDK05G120C5XTMA1 | Infineon Technologies |
Description: DIODE SIC 1.2KV 19.1A TO263-1Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 33 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO263-2-1 Current - Average Rectified (Io): 19.1A Capacitance @ Vr, F: 301pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) |
на замовлення 955 шт: термін постачання 21-31 дні (днів) |
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CHL8326-20CRT | Infineon Technologies |
Description: IC REG BUCK 48VQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 1.2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-48-901 Synchronous Rectifier: No Control Features: Enable, Power Good Serial Interfaces: I²C, PMBus, SMBus Output Phases: 6 Clock Sync: No Part Status: Obsolete Number of Outputs: 6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EVAL3K3WTPPFCCCTOBO1 | Infineon Technologies |
Description: CFD7 EVAL BOARDPart Status: Active Embedded: Yes Supplied Contents: Board(s) Utilized IC / Part: CFD7, XMC1402 Type: Power Management Function: Power Factor Correction Packaging: Bulk |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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XMC1402T038X0200AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 200KB FLASH 38TSSOPPackaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 200KB (200K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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XMC1402T038X0200AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 200KB FLASH 38TSSOPPackaging: Cut Tape (CT) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 200KB (200K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Part Status: Active Number of I/O: 26 DigiKey Programmable: Not Verified |
на замовлення 6226 шт: термін постачання 21-31 дні (днів) |
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XMC1402Q040X0128AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 40VQFNPart Status: Active Supplier Device Package: PG-VQFN-40-17 Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Connectivity: I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 12x12b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 128KB (128K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Number of I/O: 27 DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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XMC1402Q040X0200AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 200KB FLASH 40VQFNDigiKey Programmable: Not Verified Number of I/O: 27 Part Status: Active Supplier Device Package: PG-VQFN-40-17 Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Connectivity: I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 12x12b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 200KB (200K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
| BFS 360L6 E6327 | Infineon Technologies |
Description: RF TRANS 2 NPN 9V 14GHZ TSLP-6-1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BFS 386L6 E6327 | Infineon Technologies |
Description: RF TRANS 2 NPN 6V 14GHZ TSLP-6-1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BFS 469L6 E6327 | Infineon Technologies |
Description: RF TRANS 2 NPN 5V/10V 9GHZ TSLPPackaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Gain: 14.5dB Power - Max: 200mW, 250mW Current - Collector (Ic) (Max): 50mA, 70mA Voltage - Collector Emitter Breakdown (Max): 5V, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V Frequency - Transition: 22GHz, 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz Supplier Device Package: TSLP-6-1 Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. |
| ETD580N16P60HPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Description: SCR MODULE 1.6KV 700A MODULE
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 13704.24 грн |
| ETD580N16P60HPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Description: SCR MODULE 1.6KV 700A MODULE
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| ETT510N16P60HPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 13999.48 грн |
| ETD630N16P60HPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 17871.31 грн |
| ETD630N16P60HPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| ETT580N16P60HPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 586 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: SCR MODULE 1.6KV 700A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 586 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 15176.57 грн |
| ETT630N16P60HPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 635 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 16111.88 грн |
| ETD510N16P60HPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 515 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.6 kV
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 13424.11 грн |
| IPB65R190CFD7AATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IPB65R190CFD7AATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 14A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 919 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 284.39 грн |
| 10+ | 179.54 грн |
| 100+ | 126.15 грн |
| 500+ | 99.22 грн |
| IPWS65R035CFD7AXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 63A TO247-3-41
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Description: MOSFET N-CH 650V 63A TO247-3-41
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
товару немає в наявності
В кошику
од. на суму грн.
| IKZ50N65ES5XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
Description: IGBT TRENCH 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 93+ | 219.38 грн |
| FP50R12W2T7BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 50A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Description: IGBT MODULE 1200V 50A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FP50R12W2T7PB11BPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Current - Collector Cutoff (Max): 8 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: LOW POWER EASY AG-EASY2B-2
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Current - Collector Cutoff (Max): 8 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| F415MR12W2M1B76BOMA1 |
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Description: LOW POWER EASY AG-EASY2B-2
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 22357.64 грн |
| PXP1600CPQG003XUMA1 |
Виробник: Infineon Technologies
Description: IC CONTROLLER
Description: IC CONTROLLER
товару немає в наявності
В кошику
од. на суму грн.
| 1EDI3031ASXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 1EDI3031ASXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 1EDI3021ASXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 1EDI3021ASXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Qualification: AEC-Q100
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Grade: Automotive
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 20A, 20A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
на замовлення 1021 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 311.51 грн |
| 10+ | 227.89 грн |
| 25+ | 209.89 грн |
| 100+ | 178.41 грн |
| 250+ | 169.56 грн |
| 500+ | 164.23 грн |
| 1EDI3020ASXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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Мінімальне замовлення: 1000 шт
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| 1EDI3020ASXUMA1 |
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Виробник: Infineon Technologies
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: DGT ISO 5.7KV 1CH GT DVR DSO20
Voltage - Output Supply: 3V ~ 5.5V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Common Mode Transient Immunity (Min): 150kV/µs
Rise / Fall Time (Typ): 55ns, 45ns (Max)
Supplier Device Package: PG-DSO-20-91
Approval Agency: UL, VDE
Voltage - Isolation: 5700Vrms
Current - Output High, Low: 12A, 12A
Technology: Magnetic Coupling
Current - Peak Output: 12A
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 358.01 грн |
| 10+ | 262.59 грн |
| 25+ | 242.07 грн |
| 100+ | 206.02 грн |
| 250+ | 195.93 грн |
| 500+ | 189.85 грн |
| IPAN60R650CEXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9.9A TO220
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 600V 9.9A TO220
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
на замовлення 691 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 487+ | 42.24 грн |
| SAK-XC2264-56F66LAC |
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Виробник: Infineon Technologies
Description: 16 BIT C166 MICROXC2200 FAMILY (
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: DMA, I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 8x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 34K x 8
Program Memory Size: 448KB (448K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
Description: 16 BIT C166 MICROXC2200 FAMILY (
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: DMA, I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 8x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 34K x 8
Program Memory Size: 448KB (448K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Bulk
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| IPL65R095CFD7AUMA1 |
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Виробник: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| IPL65R095CFD7AUMA1 |
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Виробник: Infineon Technologies
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
Description: COOLMOS CFD7 SUPERJUNCTION MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 335.54 грн |
| 10+ | 245.43 грн |
| TLE7469GV53AUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO-12
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): -, 0.6V @ 215mA
PSRR: 60dB (100Hz), 60dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: PG-DSO-12-11
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA, 215mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 3.3V/5V DSO-12
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): -, 0.6V @ 215mA
PSRR: 60dB (100Hz), 60dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: PG-DSO-12-11
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA, 215mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 300.66 грн |
| 10+ | 219.61 грн |
| 25+ | 202.22 грн |
| 100+ | 171.80 грн |
| 250+ | 163.22 грн |
| 500+ | 158.05 грн |
| T1080N04TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 600V 2000A DO-200AB
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Single
Operating Temperature: -40°C ~ 140°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Tray
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 2000 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1078 A
Number of SCRs, Diodes: 1 SCR
Description: SCR MODULE 600V 2000A DO-200AB
Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Single
Operating Temperature: -40°C ~ 140°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Tray
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 2000 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1078 A
Number of SCRs, Diodes: 1 SCR
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| IRF6898MTRPBF |
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Виробник: Infineon Technologies
Description: IRF6898 - 12V-300V N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Supplier Device Package: DirectFET™ Isometric MX
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
Description: IRF6898 - 12V-300V N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Supplier Device Package: DirectFET™ Isometric MX
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
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| IFX80471SKV50 |
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Виробник: Infineon Technologies
Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
на замовлення 7257 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 290+ | 73.47 грн |
| IFX80471SKV |
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Виробник: Infineon Technologies
Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
Description: IFX80471 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Active
Number of Outputs: 1
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| IFX80471SKVXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
Description: IC REG CTRLR BUCK 14DSO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
на замовлення 8665 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 198+ | 100.70 грн |
| ISZ0803NLSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ISZ0803NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Description: MOSFET N-CH 100V 7.7A/37A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 18µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 69.92 грн |
| 100+ | 46.84 грн |
| 500+ | 34.69 грн |
| 1000+ | 31.71 грн |
| 2000+ | 29.20 грн |
| ISC0803NLSATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Description: TRENCH >=100V PG-TDSON-8
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ISC0803NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Description: TRENCH >=100V PG-TDSON-8
товару немає в наявності
В кошику
од. на суму грн.
| IPW50R399CPFKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
Description: MOSFET N-CH 560V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
на замовлення 5520 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 251+ | 85.87 грн |
| IPD220N06L3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 26.04 грн |
| 5000+ | 23.16 грн |
| IPD088N06N3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD048N06L3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 43.25 грн |
| 5000+ | 38.78 грн |
| 7500+ | 37.33 грн |
| IRF7524D1TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 1.7A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Description: MOSFET P-CH 20V 1.7A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
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В кошику
од. на суму грн.
| IAUS300N08S5N012TATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 185.12 грн |
| TLT125D0EJXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-52
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 14V
Supplier Device Package: PG-DSO-8-52
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 160°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Current - Supply (Max): 25 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 80dB (100Hz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Description: IC REG LINEAR POS ADJ 8DSO-52
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 14V
Supplier Device Package: PG-DSO-8-52
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 160°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Current - Supply (Max): 25 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 80dB (100Hz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLT125D0EJXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO-52
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 25 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 80dB (100Hz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 14V
Supplier Device Package: PG-DSO-8-52
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 160°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR POS ADJ 8DSO-52
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 25 mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 80dB (100Hz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 14V
Supplier Device Package: PG-DSO-8-52
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 110 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 160°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2040 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.31 грн |
| 10+ | 89.32 грн |
| 25+ | 81.31 грн |
| 100+ | 68.04 грн |
| 250+ | 64.10 грн |
| 500+ | 61.73 грн |
| 1000+ | 58.80 грн |
| TLE9879QTW40XUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 10
Part Status: Active
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: LINbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Core Size: 32-Bit Single-Core
Data Converters: A/D 5x10b Sigma-Delta
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 10
Part Status: Active
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: LINbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Core Size: 32-Bit Single-Core
Data Converters: A/D 5x10b Sigma-Delta
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 346.31 грн |
| TLE9879QTW40XUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Number of I/O: 10
Part Status: Active
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: LINbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Core Size: 32-Bit Single-Core
Data Converters: A/D 5x10b Sigma-Delta
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Number of I/O: 10
Part Status: Active
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: LINbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Core Size: 32-Bit Single-Core
Data Converters: A/D 5x10b Sigma-Delta
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
на замовлення 7433 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 634.65 грн |
| 10+ | 551.60 грн |
| 25+ | 525.87 грн |
| 100+ | 428.52 грн |
| 250+ | 409.26 грн |
| 500+ | 373.15 грн |
| 1000+ | 319.67 грн |
| FS300R17OE4B81BPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Input Capacitance (Cies) @ Vce: 24.3 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 300 A
Part Status: Active
Supplier Device Package: AG-ECONOPP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
IGBT Type: Trench Field Stop
Description: MEDIUM POWER ECONO
Input Capacitance (Cies) @ Vce: 24.3 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 300 A
Part Status: Active
Supplier Device Package: AG-ECONOPP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
IGBT Type: Trench Field Stop
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| FS450R12OE4B81BPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 27.9 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOPP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C (TJ)
Description: MEDIUM POWER ECONO
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 27.9 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONOPP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
Operating Temperature: -40°C ~ 150°C (TJ)
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| FF2MR12KM1HOSA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V 500A AG-62MM
Part Status: Obsolete
Supplier Device Package: AG-62MM
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 2N-CH 1200V 500A AG-62MM
Part Status: Obsolete
Supplier Device Package: AG-62MM
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 64349.11 грн |
| IDK05G120C5XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIC 1.2KV 19.1A TO263-1
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2-1
Current - Average Rectified (Io): 19.1A
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE SIC 1.2KV 19.1A TO263-1
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2-1
Current - Average Rectified (Io): 19.1A
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| IDK05G120C5XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIC 1.2KV 19.1A TO263-1
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2-1
Current - Average Rectified (Io): 19.1A
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Description: DIODE SIC 1.2KV 19.1A TO263-1
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO263-2-1
Current - Average Rectified (Io): 19.1A
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
на замовлення 955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 301.44 грн |
| 10+ | 191.18 грн |
| 100+ | 134.60 грн |
| 500+ | 103.63 грн |
| CHL8326-20CRT |
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Виробник: Infineon Technologies
Description: IC REG BUCK 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-48-901
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 6
Description: IC REG BUCK 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-48-901
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 6
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| EVAL3K3WTPPFCCCTOBO1 |
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Виробник: Infineon Technologies
Description: CFD7 EVAL BOARD
Part Status: Active
Embedded: Yes
Supplied Contents: Board(s)
Utilized IC / Part: CFD7, XMC1402
Type: Power Management
Function: Power Factor Correction
Packaging: Bulk
Description: CFD7 EVAL BOARD
Part Status: Active
Embedded: Yes
Supplied Contents: Board(s)
Utilized IC / Part: CFD7, XMC1402
Type: Power Management
Function: Power Factor Correction
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 39125.86 грн |
| XMC1402T038X0200AAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 200KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 109.97 грн |
| XMC1402T038X0200AAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 200KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 6226 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.23 грн |
| 10+ | 150.58 грн |
| 25+ | 137.87 грн |
| 100+ | 116.30 грн |
| 250+ | 110.06 грн |
| 500+ | 107.09 грн |
| XMC1402Q040X0128AAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40VQFN
Part Status: Active
Supplier Device Package: PG-VQFN-40-17
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 12x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 40VQFN
Part Status: Active
Supplier Device Package: PG-VQFN-40-17
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 12x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 113.50 грн |
| XMC1402Q040X0200AAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 40VQFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Part Status: Active
Supplier Device Package: PG-VQFN-40-17
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 200KB FLASH 40VQFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Part Status: Active
Supplier Device Package: PG-VQFN-40-17
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
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од. на суму грн.
| BFS 360L6 E6327 |
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Виробник: Infineon Technologies
Description: RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
Description: RF TRANS 2 NPN 9V 14GHZ TSLP-6-1
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| BFS 386L6 E6327 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANS 2 NPN 6V 14GHZ TSLP-6-1
Description: RF TRANS 2 NPN 6V 14GHZ TSLP-6-1
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| BFS 469L6 E6327 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANS 2 NPN 5V/10V 9GHZ TSLP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 14.5dB
Power - Max: 200mW, 250mW
Current - Collector (Ic) (Max): 50mA, 70mA
Voltage - Collector Emitter Breakdown (Max): 5V, 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V
Frequency - Transition: 22GHz, 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Part Status: Discontinued at Digi-Key
Description: RF TRANS 2 NPN 5V/10V 9GHZ TSLP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 14.5dB
Power - Max: 200mW, 250mW
Current - Collector (Ic) (Max): 50mA, 70mA
Voltage - Collector Emitter Breakdown (Max): 5V, 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V
Frequency - Transition: 22GHz, 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device Package: TSLP-6-1
Part Status: Discontinued at Digi-Key
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