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TDA 6190T GEG TDA 6190T GEG Infineon Technologies fundamentals-of-power-semiconductors Description: IC MIXER/AMP DVB-IF PDSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-16
DigiKey Programmable: Not Verified
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TDA 6192V TDA 6192V Infineon Technologies TDA6192%20V2.1.pdf Description: IC RF AMP GP 30MHZ-65MHZ 20VQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 30MHz ~ 65MHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-20
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IPI90N04S402BSAKSA1 Infineon Technologies Description: MOSFET N-CH 40V TO263
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CY62148G-45SXI CY62148G-45SXI Infineon Technologies Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 656 шт:
термін постачання 21-31 дні (днів)
3+143.25 грн
Мінімальне замовлення: 3
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CY62148G-45SXI CY62148G-45SXI Infineon Technologies Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148G-45ZSXI CY62148G-45ZSXI Infineon Technologies Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Bulk
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
57+396.27 грн
Мінімальне замовлення: 57
В кошику  од. на суму  грн.
CY62148GN-45ZSXI CY62148GN-45ZSXI Infineon Technologies Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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AUIRFN8478TR Infineon Technologies auirfn8458.pdf Description: AUIRFN8478 - 20V-40V N-CHANNEL A
Packaging: Bulk
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BTS149NK BTS149NK Infineon Technologies INFNS01545-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
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BTS149E3045ANTMA1 BTS149E3045ANTMA1 Infineon Technologies INFNS01545-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
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IAUS300N08S5N012TATMA1 IAUS300N08S5N012TATMA1 Infineon Technologies Infineon-IAUS300N08S5N012T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e0474f661bb Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1+479.87 грн
10+322.93 грн
100+234.90 грн
500+189.65 грн
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IPDD60R105CFD7XTMA1 IPDD60R105CFD7XTMA1 Infineon Technologies Infineon-IPDD60R105CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00b00c424e Description: MOSFET N-CH 600V 31A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
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IPDD60R105CFD7XTMA1 IPDD60R105CFD7XTMA1 Infineon Technologies Infineon-IPDD60R105CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00b00c424e Description: MOSFET N-CH 600V 31A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
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BSC0906NS BSC0906NS Infineon Technologies INFNS27900-1.pdf?t.download=true&u=5oefqw Description: BSC0906 - 12V-300V N-CHANNEL POW
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BSC0906NSE8189ATMA1 Infineon Technologies Description: MOSFET N-CH 30V TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
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BSZ009NE2LS5ATMA1 BSZ009NE2LS5ATMA1 Infineon Technologies Infineon-BSZ009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a501c81dd0f7e Description: MOSFET N-CH 25V 39A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+79.07 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC004NE2LS5ATMA1 BSC004NE2LS5ATMA1 Infineon Technologies Infineon-BSC004NE2LS5-DataSheet-v02_01-EN.pdf?fileId=5546d46272aa54c00172b72be9124a3e Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
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BSC004NE2LS5ATMA1 BSC004NE2LS5ATMA1 Infineon Technologies Infineon-BSC004NE2LS5-DataSheet-v02_01-EN.pdf?fileId=5546d46272aa54c00172b72be9124a3e Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
на замовлення 3285 шт:
термін постачання 21-31 дні (днів)
2+187.02 грн
10+124.15 грн
100+85.30 грн
500+64.45 грн
1000+58.01 грн
2000+55.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
EVALPASCO2MINIBOARDTOBO1 EVALPASCO2MINIBOARDTOBO1 Infineon Technologies Infineon-PASCO2V01-DataSheet-v01_03-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c80027ecd01809278f1af1ba2 Description: EVAL BRD
Packaging: Bulk
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s)
Voltage - Supply: 3.3V, 12V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
1+2182.91 грн
В кошику  од. на суму  грн.
EVALPASCO2SENSOR2GOTOBO1 EVALPASCO2SENSOR2GOTOBO1 Infineon Technologies EVALPASCO2SENSOR2GOTOBO1.pdf Description: EVAL BRD
Packaging: Bulk
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s), Cable(s)
Voltage - Supply: 3.3V, 12V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, MCU
Part Status: Active
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+6256.66 грн
В кошику  од. на суму  грн.
IR35201MTRPBF IR35201MTRPBF Infineon Technologies pb-ir35201.pdf Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
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IR35201MTRPBF IR35201MTRPBF Infineon Technologies pb-ir35201.pdf Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
на замовлення 1014 шт:
термін постачання 21-31 дні (днів)
1+490.22 грн
10+426.39 грн
25+406.53 грн
100+331.26 грн
250+316.37 грн
500+288.46 грн
1000+247.12 грн
В кошику  од. на суму  грн.
IPP330P10NMAKSA1 IPP330P10NMAKSA1 Infineon Technologies Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+335.04 грн
50+167.69 грн
100+155.17 грн
500+120.35 грн
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BCR192WH6327XTSA1 BCR192WH6327XTSA1 Infineon Technologies bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 147000 шт:
термін постачання 21-31 дні (днів)
6571+3.79 грн
Мінімальне замовлення: 6571
В кошику  од. на суму  грн.
BCR192WH6327 BCR192WH6327 Infineon Technologies INFNS17191-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 192 E6327 BCR 192 E6327 Infineon Technologies INFNS11617-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
8013+2.98 грн
Мінімальне замовлення: 8013
В кошику  од. на суму  грн.
BCR192E6785HTSA1 BCR192E6785HTSA1 Infineon Technologies bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 93855 шт:
термін постачання 21-31 дні (днів)
13172+1.52 грн
Мінімальне замовлення: 13172
В кошику  од. на суму  грн.
BCR192E6327 BCR192E6327 Infineon Technologies INFNS11617-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
товару немає в наявності
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BCR 192F E6327 BCR 192F E6327 Infineon Technologies bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da Description: TRANS PREBIAS PNP 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 192L3 E6327 BCR 192L3 E6327 Infineon Technologies BCR192%20%282003%29.pdf Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 192T E6327 BCR 192T E6327 Infineon Technologies BCR192%20%282003%29.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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IRDC3883 IRDC3883 Infineon Technologies Infineon-UG-IRDC3883-UM-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a6a3ca216105a Description: EVAL IR3883
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 12V
Current - Output: 3A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3883
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+3410.04 грн
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IPD079N06L3GATMA1 IPD079N06L3GATMA1 Infineon Technologies Infineon-IPD079N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b5528634dc0 Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
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IPA60R600CPXKSA1 IPA60R600CPXKSA1 Infineon Technologies Infineon-IPA60R600CP-DS-v02_00-en.pdf?fileId=db3a3043183a95550118792d4e540458 Description: IPA60R600 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
на замовлення 8500 шт:
термін постачання 21-31 дні (днів)
451+49.18 грн
Мінімальне замовлення: 451
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BAV99UE6327 Infineon Technologies Description: RECTIFIER DIODE
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DD340N22STIMHPSA1 DD340N22STIMHPSA1 Infineon Technologies Infineon-DD340N22S-DataSheet-v03_08-EN.pdf?fileId=5546d4625cc9456a015d06e5e1597efa Description: DIODE MOD GP 2200V 330A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: 130°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 800 A
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+7568.15 грн
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DD340N18SHPSA1 DD340N18SHPSA1 Infineon Technologies DD340N18S.pdf Description: DIODE MOD GP 1800V BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
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BTS50015-1TMA BTS50015-1TMA Infineon Technologies INFN-S-A0000308628-1.pdf?t.download=true&u=5oefqw Description: BTS50015 - PROFET - SMART HIGH S
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-232
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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BTS500151TADATMA1 BTS500151TADATMA1 Infineon Technologies Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-8
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q100
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BTS500151TADATMA1 BTS500151TADATMA1 Infineon Technologies Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-8
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q100
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S29GL064N90FAI030 S29GL064N90FAI030 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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FB50R07W2E3B23BOMA1 FB50R07W2E3B23BOMA1 Infineon Technologies FB50R07W2E3_B23_v1.01_9-16-22.pdf Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+4464.49 грн
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TC377TP96F300SAAKXUMA1 TC377TP96F300SAAKXUMA1 Infineon Technologies Infineon-AURIX_TC37x_Addendum-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730574c782647e Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+1897.54 грн
Мінімальне замовлення: 1000
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PEF2055NV2.1 PEF2055NV2.1 Infineon Technologies Description: PCM INTERFACE CONTROLLER
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Active
Number of Circuits: 1
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
21+963.46 грн
Мінімальне замовлення: 21
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IPD50N06S409ATMA2 IPD50N06S409ATMA2 Infineon Technologies INFNS13307-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Qualification: AEC-Q101
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FP40R12KE3BPSA1 FP40R12KE3BPSA1 Infineon Technologies Infineon-FP40R12KE3-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b430a9dc5189 Description: LOW POWER ECONO AG-ECONO2C-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
1+6485.85 грн
15+5037.79 грн
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CY7C0251E-15AXC CY7C0251E-15AXC Infineon Technologies download Description: IC SRAM 144KBIT 15NS 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 144Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 8K x 18
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
23+1064.00 грн
Мінімальне замовлення: 23
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CYPD2120-24LQXI CYPD2120-24LQXI Infineon Technologies Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB TYPE C 1-PORT 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
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BAS40-02LE6327 BAS40-02LE6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 40V 120MA TSLP-2-1
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-TSLP-2-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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BAS 40-04 B5003 BAS 40-04 B5003 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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F4100R17ME4B11BPSA2 Infineon Technologies Infineon-F4-100R17ME4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae37f25a7de9 Description: MEDIUM POWER ECONO AG-ECONOD-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONOD-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
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FP100R12N2T7BPSA1 FP100R12N2T7BPSA1 Infineon Technologies Infineon-FP100R12N2T7-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0ac713c07107 Description: LOW POWER ECONO AG-ECONO2-4
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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FP100R12N3T7B11BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3B-711
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
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FP100R12N3T7B16BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3B-711
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FP100R12N3T7BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3B-711
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FP100R12W3T7B11BPSA1 FP100R12W3T7B11BPSA1 Infineon Technologies Infineon-FP100R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b14a703900 Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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FS100R07N2E4B11BPSA1 Infineon Technologies Infineon-FS100R07N2E4_B11-DS-v03_00-EN.pdf?fileId=db3a30433004641301304036f2a4573e Description: LOW POWER ECONO AG-ECONO2B-411
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FS100R07N2E4BPSA1 FS100R07N2E4BPSA1 Infineon Technologies Infineon-FS100R07N2E4-DS-v02_00-en_de.pdf?fileId=db3a30432f5008fe012f52f5fa2e396f Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
на замовлення 78 шт:
термін постачання 21-31 дні (днів)
1+5483.13 грн
15+4113.99 грн
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FS100R12KT4BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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FS100R12N2T4BPSA2 Infineon Technologies Infineon-FS100R12N2T4-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163a6e8cdc61038 Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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TDA 6190T GEG fundamentals-of-power-semiconductors
TDA 6190T GEG
Виробник: Infineon Technologies
Description: IC MIXER/AMP DVB-IF PDSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-16
DigiKey Programmable: Not Verified
товару немає в наявності
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TDA 6192V TDA6192%20V2.1.pdf
TDA 6192V
Виробник: Infineon Technologies
Description: IC RF AMP GP 30MHZ-65MHZ 20VQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 30MHz ~ 65MHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-20
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IPI90N04S402BSAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V TO263
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CY62148G-45SXI Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
CY62148G-45SXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 656 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+143.25 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY62148G-45SXI Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
CY62148G-45SXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148G-45ZSXI Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
CY62148G-45ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Bulk
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
57+396.27 грн
Мінімальне замовлення: 57
В кошику  од. на суму  грн.
CY62148GN-45ZSXI Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148GN-45ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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AUIRFN8478TR auirfn8458.pdf
Виробник: Infineon Technologies
Description: AUIRFN8478 - 20V-40V N-CHANNEL A
Packaging: Bulk
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BTS149NK INFNS01545-1.pdf?t.download=true&u=5oefqw
BTS149NK
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
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BTS149E3045ANTMA1 INFNS01545-1.pdf?t.download=true&u=5oefqw
BTS149E3045ANTMA1
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
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IAUS300N08S5N012TATMA1 Infineon-IAUS300N08S5N012T-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301762e0474f661bb
IAUS300N08S5N012TATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 300A HDSOP-16-2
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+479.87 грн
10+322.93 грн
100+234.90 грн
500+189.65 грн
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IPDD60R105CFD7XTMA1 Infineon-IPDD60R105CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00b00c424e
IPDD60R105CFD7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
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IPDD60R105CFD7XTMA1 Infineon-IPDD60R105CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00b00c424e
IPDD60R105CFD7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
товару немає в наявності
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BSC0906NS INFNS27900-1.pdf?t.download=true&u=5oefqw
BSC0906NS
Виробник: Infineon Technologies
Description: BSC0906 - 12V-300V N-CHANNEL POW
товару немає в наявності
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BSC0906NSE8189ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
товару немає в наявності
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BSZ009NE2LS5ATMA1 Infineon-BSZ009NE2LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a501c81dd0f7e
BSZ009NE2LS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 39A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+79.07 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC004NE2LS5ATMA1 Infineon-BSC004NE2LS5-DataSheet-v02_01-EN.pdf?fileId=5546d46272aa54c00172b72be9124a3e
BSC004NE2LS5ATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
товару немає в наявності
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BSC004NE2LS5ATMA1 Infineon-BSC004NE2LS5-DataSheet-v02_01-EN.pdf?fileId=5546d46272aa54c00172b72be9124a3e
BSC004NE2LS5ATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
на замовлення 3285 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+187.02 грн
10+124.15 грн
100+85.30 грн
500+64.45 грн
1000+58.01 грн
2000+55.23 грн
Мінімальне замовлення: 2
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EVALPASCO2MINIBOARDTOBO1 Infineon-PASCO2V01-DataSheet-v01_03-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c80027ecd01809278f1af1ba2
EVALPASCO2MINIBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BRD
Packaging: Bulk
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s)
Voltage - Supply: 3.3V, 12V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2182.91 грн
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EVALPASCO2SENSOR2GOTOBO1 EVALPASCO2SENSOR2GOTOBO1.pdf
EVALPASCO2SENSOR2GOTOBO1
Виробник: Infineon Technologies
Description: EVAL BRD
Packaging: Bulk
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s), Cable(s)
Voltage - Supply: 3.3V, 12V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s), Cable(s)
Embedded: Yes, MCU
Part Status: Active
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6256.66 грн
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IR35201MTRPBF pb-ir35201.pdf
IR35201MTRPBF
Виробник: Infineon Technologies
Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
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IR35201MTRPBF pb-ir35201.pdf
IR35201MTRPBF
Виробник: Infineon Technologies
Description: IC CTRLR PWM MULTIPHASE 56QFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
на замовлення 1014 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+490.22 грн
10+426.39 грн
25+406.53 грн
100+331.26 грн
250+316.37 грн
500+288.46 грн
1000+247.12 грн
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IPP330P10NMAKSA1 Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f
IPP330P10NMAKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+335.04 грн
50+167.69 грн
100+155.17 грн
500+120.35 грн
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BCR192WH6327XTSA1 bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da
BCR192WH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 147000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6571+3.79 грн
Мінімальне замовлення: 6571
В кошику  од. на суму  грн.
BCR192WH6327 INFNS17191-1.pdf?t.download=true&u=5oefqw
BCR192WH6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 192 E6327 INFNS11617-1.pdf?t.download=true&u=5oefqw
BCR 192 E6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8013+2.98 грн
Мінімальне замовлення: 8013
В кошику  од. на суму  грн.
BCR192E6785HTSA1 bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da
BCR192E6785HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 93855 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13172+1.52 грн
Мінімальне замовлення: 13172
В кошику  од. на суму  грн.
BCR192E6327 INFNS11617-1.pdf?t.download=true&u=5oefqw
BCR192E6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
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BCR 192F E6327 bcr192series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144044a95702da
BCR 192F E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 192L3 E6327 BCR192%20%282003%29.pdf
BCR 192L3 E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 192T E6327 BCR192%20%282003%29.pdf
BCR 192T E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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IRDC3883 Infineon-UG-IRDC3883-UM-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a6a3ca216105a
IRDC3883
Виробник: Infineon Technologies
Description: EVAL IR3883
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 12V
Current - Output: 3A
Frequency - Switching: 800kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3883
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3410.04 грн
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IPD079N06L3GATMA1 Infineon-IPD079N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b5528634dc0
IPD079N06L3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
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IPA60R600CPXKSA1 Infineon-IPA60R600CP-DS-v02_00-en.pdf?fileId=db3a3043183a95550118792d4e540458
IPA60R600CPXKSA1
Виробник: Infineon Technologies
Description: IPA60R600 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
на замовлення 8500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
451+49.18 грн
Мінімальне замовлення: 451
В кошику  од. на суму  грн.
BAV99UE6327
Виробник: Infineon Technologies
Description: RECTIFIER DIODE
товару немає в наявності
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DD340N22STIMHPSA1 Infineon-DD340N22S-DataSheet-v03_08-EN.pdf?fileId=5546d4625cc9456a015d06e5e1597efa
DD340N22STIMHPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 2200V 330A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: 130°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 800 A
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7568.15 грн
В кошику  од. на суму  грн.
DD340N18SHPSA1 DD340N18S.pdf
DD340N18SHPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 1800V BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
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BTS50015-1TMA INFN-S-A0000308628-1.pdf?t.download=true&u=5oefqw
BTS50015-1TMA
Виробник: Infineon Technologies
Description: BTS50015 - PROFET - SMART HIGH S
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-232
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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BTS500151TADATMA1 Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f
BTS500151TADATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-8
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q100
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BTS500151TADATMA1 Infineon-BTS50015-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36c510460f
BTS500151TADATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-7-8
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q100
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S29GL064N90FAI030 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90FAI030
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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FB50R07W2E3B23BOMA1 FB50R07W2E3_B23_v1.01_9-16-22.pdf
FB50R07W2E3B23BOMA1
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4464.49 грн
В кошику  од. на суму  грн.
TC377TP96F300SAAKXUMA1 Infineon-AURIX_TC37x_Addendum-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730574c782647e
TC377TP96F300SAAKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+1897.54 грн
Мінімальне замовлення: 1000
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PEF2055NV2.1
PEF2055NV2.1
Виробник: Infineon Technologies
Description: PCM INTERFACE CONTROLLER
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: PCM Interface Controller
Interface: ISDN, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 9.5mA
Supplier Device Package: P-LCC-44-1
Part Status: Active
Number of Circuits: 1
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
21+963.46 грн
Мінімальне замовлення: 21
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IPD50N06S409ATMA2 INFNS13307-1.pdf?t.download=true&u=5oefqw
IPD50N06S409ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Qualification: AEC-Q101
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FP40R12KE3BPSA1 Infineon-FP40R12KE3-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b430a9dc5189
FP40R12KE3BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2C-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6485.85 грн
15+5037.79 грн
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CY7C0251E-15AXC download
CY7C0251E-15AXC
Виробник: Infineon Technologies
Description: IC SRAM 144KBIT 15NS 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 144Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Dual Port, Asynchronous
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 8K x 18
на замовлення 176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+1064.00 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
CYPD2120-24LQXI Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYPD2120-24LQXI
Виробник: Infineon Technologies
Description: IC USB TYPE C 1-PORT 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
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BAS40-02LE6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS40-02LE6327
Виробник: Infineon Technologies
Description: DIODE SCHOTT 40V 120MA TSLP-2-1
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-TSLP-2-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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BAS 40-04 B5003 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS 40-04 B5003
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
товару немає в наявності
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F4100R17ME4B11BPSA2 Infineon-F4-100R17ME4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae37f25a7de9
Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO AG-ECONOD-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONOD-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
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FP100R12N2T7BPSA1 Infineon-FP100R12N2T7-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0ac713c07107
FP100R12N2T7BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2-4
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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FP100R12N3T7B11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-711
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
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FP100R12N3T7B16BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-711
товару немає в наявності
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FP100R12N3T7BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-711
товару немає в наявності
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FP100R12W3T7B11BPSA1 Infineon-FP100R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b14a703900
FP100R12W3T7B11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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FS100R07N2E4B11BPSA1 Infineon-FS100R07N2E4_B11-DS-v03_00-EN.pdf?fileId=db3a30433004641301304036f2a4573e
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
товару немає в наявності
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FS100R07N2E4BPSA1 Infineon-FS100R07N2E4-DS-v02_00-en_de.pdf?fileId=db3a30432f5008fe012f52f5fa2e396f
FS100R07N2E4BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
на замовлення 78 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5483.13 грн
15+4113.99 грн
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FS100R12KT4BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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FS100R12N2T4BPSA2 Infineon-FS100R12N2T4-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163a6e8cdc61038
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
товару немає в наявності
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