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IPB50N10S3L16ATMA1 IPB50N10S3L16ATMA1 Infineon Technologies Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
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IPB50N10S3L16ATMA1 IPB50N10S3L16ATMA1 Infineon Technologies Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
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IPG20N10S436AATMA1 IPG20N10S436AATMA1 Infineon Technologies PdfFile_211447.pdf Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)
5000+37.47 грн
10000+35.61 грн
Мінімальне замовлення: 5000
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BSC016N06NSSCATMA1 BSC016N06NSSCATMA1 Infineon Technologies Infineon-BSC016N06NSSC-DataSheet-v02_00-EN.pdf?fileId=5546d46274b9648d0174c1fd04fb336c Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+99.00 грн
Мінімальне замовлення: 4000
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BGM7LLHM4L12E6327XTSA1 Infineon Technologies LTE_Low_Noise_Amplifiers_Br.pdf Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Packaging: Bulk
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 2.7GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.5mA
Supplier Device Package: TSLP-12-4
Part Status: Obsolete
на замовлення 682500 шт:
термін постачання 21-31 дні (днів)
175+125.44 грн
Мінімальне замовлення: 175
В кошику  од. на суму  грн.
IPB47N10S33ATMA1 IPB47N10S33ATMA1 Infineon Technologies IPx47N10S-33.pdf Description: MOSFET N-CH 100V 47A TO263-3
на замовлення 446 шт:
термін постачання 21-31 дні (днів)
311+78.89 грн
Мінімальне замовлення: 311
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AUIRFR1010Z AUIRFR1010Z Infineon Technologies IRSDS11928-1.pdf?t.download=true&u=5oefqw Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
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PXE1110ADM-G001 Infineon Technologies Description: IC CONTROLLER
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SPD04P10PGBTMA1 SPD04P10PGBTMA1 Infineon Technologies SPD04P10P_Rev1.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ad1e743f8 Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
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SPD04P10PGBTMA1 SPD04P10PGBTMA1 Infineon Technologies SPD04P10P_Rev1.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ad1e743f8 Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
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ACCESSORY33234NOSA1 Infineon Technologies Description: ACCESSORY IGBT MODULEE
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FS20R06XL4BOMA1 Infineon Technologies Description: IGBT MODULE 600V 26A 89W EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY750-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
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SAKXC2286M104F80LAA SAKXC2286M104F80LAA Infineon Technologies INFNS14276-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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SAK-XC2287M-72F80L AA SAK-XC2287M-72F80L AA Infineon Technologies XC228xM.pdf Description: IC MCU 16/32B 576KB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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TLE8082ESXUMA1 TLE8082ESXUMA1 Infineon Technologies Infineon-TLE8082ES-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178b0da80a14f02 Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+193.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLE8082ESXUMA1 TLE8082ESXUMA1 Infineon Technologies Infineon-TLE8082ES-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178b0da80a14f02 Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 23999 шт:
термін постачання 21-31 дні (днів)
1+379.91 грн
10+277.93 грн
25+256.06 грн
100+217.79 грн
250+207.05 грн
500+200.57 грн
1000+192.04 грн
В кошику  од. на суму  грн.
TLE8088EMXUMA1 TLE8088EMXUMA1 Infineon Technologies Infineon-TLE8088EM-DS-v01_00-en.pdf?fileId=db3a30433a047ba0013a446e76be0bbb Description: ENGINECONTR
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 6V ~ 18V
Applications: Small Engine
Supplier Device Package: PG-SSOP-24
Part Status: Active
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+243.01 грн
10+209.70 грн
25+198.28 грн
100+161.26 грн
250+152.99 грн
500+137.28 грн
1000+113.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SAK-XC2269I136F128LRAAKXUMA1 SAK-XC2269I136F128LRAAKXUMA1 Infineon Technologies Infineon-SAK-XC2269I-136F128LR%20AA-DS-v01_03-EN.pdf?fileId=5546d46249cd10140149e7537dfe4199 Description: 16 BIT C166 MICROXC2200 FAMILY (
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
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SAK-XC2220U-4F40VAA SAK-XC2220U-4F40VAA Infineon Technologies INFNS16681-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MICROCONTROLLER - XC
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TLE92104131QXXUMA1 TLE92104131QXXUMA1 Infineon Technologies Infineon-TLE92104-131QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597ebe7993962 Description: IC HALF BRIDGE DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Features: Charge Pump
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE92104131QXXUMA1 TLE92104131QXXUMA1 Infineon Technologies Infineon-TLE92104-131QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597ebe7993962 Description: IC HALF BRIDGE DRIVER 48VQFN
Packaging: Cut Tape (CT)
Features: Charge Pump
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1496 шт:
термін постачання 21-31 дні (днів)
2+225.04 грн
10+162.65 грн
25+148.97 грн
100+125.74 грн
250+119.04 грн
500+114.99 грн
1000+109.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE9872QXA40XUMA1 TLE9872QXA40XUMA1 Infineon Technologies Infineon-TLE9872QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c790ce34a8 Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE987x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+266.85 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9862QXA40XUMA1 TLE9862QXA40XUMA1 Infineon Technologies Infineon-TLE9862QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274f6cd4c0174fcecc8ed52a2 Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE986x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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TLE92104232QXXUMA1 TLE92104232QXXUMA1 Infineon Technologies Infineon-TLE92104-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597fe443d3976 Description: IC HALF BRIDGE DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Features: Charge Pump
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+133.86 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9185QXV33XUMA1 TLE9185QXV33XUMA1 Infineon Technologies Infineon-TLE9185QX%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4af47454d25 Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+151.73 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9185QXV33XUMA1 TLE9185QXV33XUMA1 Infineon Technologies Infineon-TLE9185QX%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4af47454d25 Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
на замовлення 9050 шт:
термін постачання 21-31 дні (днів)
2+306.33 грн
10+222.47 грн
25+204.34 грн
100+173.09 грн
250+164.17 грн
500+158.80 грн
1000+151.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE9185QXXUMA1 Infineon Technologies Infineon-TLE9185QX-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4bfae244d2f Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
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TLE9185QXXUMA1 Infineon Technologies Infineon-TLE9185QX-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4bfae244d2f Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)
2+332.85 грн
10+234.34 грн
25+212.68 грн
100+177.26 грн
250+166.61 грн
500+160.18 грн
1000+152.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
6EDL7141XUMA1 6EDL7141XUMA1 Infineon Technologies Infineon-6EDL7141-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8e7ead30018ec7bd6aac46f3 Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-48-78
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
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6EDL7141XUMA1 6EDL7141XUMA1 Infineon Technologies Infineon-6EDL7141-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8e7ead30018ec7bd6aac46f3 Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-48-78
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 671 шт:
термін постачання 21-31 дні (днів)
2+228.46 грн
10+164.05 грн
25+150.13 грн
100+126.50 грн
250+119.64 грн
500+115.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BGA7P320E6327XTSA1 BGA7P320E6327XTSA1 Infineon Technologies Infineon-BGA7P320-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c88ae21230188bfb98e741423 Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 5G
Voltage - Supply: 3.15V ~ 3.45V
Gain: 34.4dB
Noise Figure: 3.5dB
P1dB: 27.8dBm
Test Frequency: 3.3GHz ~ 4.2GHz
Supplier Device Package: PG-TSNP-16-12
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IRFS23N20DTRRP IRFS23N20DTRRP Infineon Technologies irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143 Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
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BSC240N12NS3G BSC240N12NS3G Infineon Technologies INFNS15757-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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SIDC81D60E6YX1SA1 Infineon Technologies Description: DIODE GEN PURPOSE 600V
Packaging: Bulk
Part Status: Obsolete
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SIDC81D120F6YX1SA1 Infineon Technologies Description: DIODE GEN PURPOSE 1.2KV
Packaging: Bulk
Part Status: Obsolete
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DDB6U100N16RRBPSA1 DDB6U100N16RRBPSA1 Infineon Technologies Infineon-DDB6U100N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f24e52af Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товару немає в наявності
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F411MR12W2M1B76BOMA1 F411MR12W2M1B76BOMA1 Infineon Technologies Description: MOSFET 4N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
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IGT40R070D1ATMA1 Infineon Technologies Infineon-IGT40R070D1-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017aa91bc8810c5c Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V
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IST007N04NM6AUMA1 IST007N04NM6AUMA1 Infineon Technologies Infineon-IST007N04NM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a0172eb7e0dfd741d Description: MOSFET N-CH 40V 54A/440A HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
2+335.42 грн
10+213.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
REFICL8810LED43WBMTOBO1 REFICL8810LED43WBMTOBO1 Infineon Technologies Description: ICL8810 REF BOARD 43W BM
Packaging: Bulk
Features: Dimmable
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+4427.19 грн
В кошику  од. на суму  грн.
IPLK70R900P7ATMA1 IPLK70R900P7ATMA1 Infineon Technologies Infineon-IPLK70R900P7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7cdc391c017ce0bd2c1b2d5f Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
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IPD100N06S403ATMA2 IPD100N06S403ATMA2 Infineon Technologies INFNS14378-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 100A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+57.93 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CYW4329HKUBGT Infineon Technologies BCM4329_RevF_Sep19,2016.pdf Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Protocol: Bluetooth v2.1
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW4329FKUBGT Infineon Technologies BCM4329_RevF_Sep19,2016.pdf Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Protocol: Bluetooth v2.1
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW4325GKWBGT Infineon Technologies BCM4325_RevE_Sep19%2C2016.pdf Description: IC RF TXRX+MCU BLUTOOTH 339XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 339-XFBGA, WLCSP
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 7.5dBm
Protocol: 802.11a/b/g, Bluetooth v3.0
Current - Receiving: 81mA
Data Rate (Max): 54Mbps
Current - Transmitting: 295mA
Supplier Device Package: 339-WLCSP (6.51x5.81)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW4330FKUBGT Infineon Technologies CYW4330FKUBGT_Web.pdf Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW4330XKUBGT Infineon Technologies BCM4330_RevE_Sep19%2C2016.pdf Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20740A2KMLG Infineon Technologies Description: IC BT BLE IEEE 802.15.4
Packaging: Bulk
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
IPTG007N06NM5ATMA1 IPTG007N06NM5ATMA1 Infineon Technologies Infineon-IPTG007N06NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177aa3630457d4e Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+234.84 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IPTG007N06NM5ATMA1 IPTG007N06NM5ATMA1 Infineon Technologies Infineon-IPTG007N06NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177aa3630457d4e Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
на замовлення 2535 шт:
термін постачання 21-31 дні (днів)
1+526.23 грн
10+338.08 грн
100+276.80 грн
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ISZ080N10NM6ATMA1 ISZ080N10NM6ATMA1 Infineon Technologies Infineon-ISZ080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba696a5f02a5 Description: TRENCH >=100V PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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ISZ080N10NM6ATMA1 ISZ080N10NM6ATMA1 Infineon Technologies Infineon-ISZ080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba696a5f02a5 Description: TRENCH >=100V PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 4656 шт:
термін постачання 21-31 дні (днів)
3+164.29 грн
10+101.35 грн
100+68.83 грн
500+51.54 грн
1000+49.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISC080N10NM6ATMA1 ISC080N10NM6ATMA1 Infineon Technologies Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211 Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+46.19 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISC080N10NM6ATMA1 ISC080N10NM6ATMA1 Infineon Technologies Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211 Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 9213 шт:
термін постачання 21-31 дні (днів)
3+167.71 грн
10+103.57 грн
100+70.44 грн
500+52.80 грн
1000+51.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISC060N10NM6ATMA1 ISC060N10NM6ATMA1 Infineon Technologies Infineon-ISC060N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9b35e3600c3 Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
ISC060N10NM6ATMA1 ISC060N10NM6ATMA1 Infineon Technologies Infineon-ISC060N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9b35e3600c3 Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 2628 шт:
термін постачання 21-31 дні (днів)
2+209.64 грн
10+130.68 грн
100+90.12 грн
500+69.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FZ3600R12HP4PHPSA1 FZ3600R12HP4PHPSA1 Infineon Technologies infineon-fz3600r12hp4-ds-en.pdf?fileId=db3a3043163797a601165742504207c7 Description: IGBT MOD 1200V 4930A AGIHMB190-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 3.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 4930 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 19000 W
Current - Collector Cutoff (Max): 5 mA
товару немає в наявності
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DDB6U104N16RRB37BPSA1 DDB6U104N16RRB37BPSA1 Infineon Technologies Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf Description: IGBT MOD 1200V 50A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товару немає в наявності
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DDB6U104N16RRBPSA1 DDB6U104N16RRBPSA1 Infineon Technologies Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf?fileId=db3a30433e4143bd013e55b8a63a205f Description: IGBT MOD 1200V 50A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+5143.38 грн
В кошику  од. на суму  грн.
DDB6U84N16RRBPSA1 DDB6U84N16RRBPSA1 Infineon Technologies Infineon-DDB6U84N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f59252b3 Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товару немає в наявності
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IPB50N10S3L16ATMA1 Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t
IPB50N10S3L16ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
товару немає в наявності
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IPB50N10S3L16ATMA1 Infineon-IPP_B_I50N10S3L_16-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9090a32c5962&ack=t
IPB50N10S3L16ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
товару немає в наявності
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IPG20N10S436AATMA1 PdfFile_211447.pdf
IPG20N10S436AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+37.47 грн
10000+35.61 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC016N06NSSCATMA1 Infineon-BSC016N06NSSC-DataSheet-v02_00-EN.pdf?fileId=5546d46274b9648d0174c1fd04fb336c
BSC016N06NSSCATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+99.00 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
BGM7LLHM4L12E6327XTSA1 LTE_Low_Noise_Amplifiers_Br.pdf
Виробник: Infineon Technologies
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Packaging: Bulk
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 2.7GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.5mA
Supplier Device Package: TSLP-12-4
Part Status: Obsolete
на замовлення 682500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
175+125.44 грн
Мінімальне замовлення: 175
В кошику  од. на суму  грн.
IPB47N10S33ATMA1 IPx47N10S-33.pdf
IPB47N10S33ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 47A TO263-3
на замовлення 446 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
311+78.89 грн
Мінімальне замовлення: 311
В кошику  од. на суму  грн.
AUIRFR1010Z IRSDS11928-1.pdf?t.download=true&u=5oefqw
AUIRFR1010Z
Виробник: Infineon Technologies
Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
товару немає в наявності
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PXE1110ADM-G001
Виробник: Infineon Technologies
Description: IC CONTROLLER
товару немає в наявності
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SPD04P10PGBTMA1 SPD04P10P_Rev1.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ad1e743f8
SPD04P10PGBTMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
товару немає в наявності
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SPD04P10PGBTMA1 SPD04P10P_Rev1.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ad1e743f8
SPD04P10PGBTMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
товару немає в наявності
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ACCESSORY33234NOSA1
Виробник: Infineon Technologies
Description: ACCESSORY IGBT MODULEE
товару немає в наявності
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FS20R06XL4BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 26A 89W EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY750-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
товару немає в наявності
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SAKXC2286M104F80LAA INFNS14276-1.pdf?t.download=true&u=5oefqw
SAKXC2286M104F80LAA
Виробник: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
товару немає в наявності
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SAK-XC2287M-72F80L AA XC228xM.pdf
SAK-XC2287M-72F80L AA
Виробник: Infineon Technologies
Description: IC MCU 16/32B 576KB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
товару немає в наявності
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TLE8082ESXUMA1 Infineon-TLE8082ES-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178b0da80a14f02
TLE8082ESXUMA1
Виробник: Infineon Technologies
Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+193.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLE8082ESXUMA1 Infineon-TLE8082ES-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178b0da80a14f02
TLE8082ESXUMA1
Виробник: Infineon Technologies
Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 23999 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+379.91 грн
10+277.93 грн
25+256.06 грн
100+217.79 грн
250+207.05 грн
500+200.57 грн
1000+192.04 грн
В кошику  од. на суму  грн.
TLE8088EMXUMA1 Infineon-TLE8088EM-DS-v01_00-en.pdf?fileId=db3a30433a047ba0013a446e76be0bbb
TLE8088EMXUMA1
Виробник: Infineon Technologies
Description: ENGINECONTR
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 6V ~ 18V
Applications: Small Engine
Supplier Device Package: PG-SSOP-24
Part Status: Active
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+243.01 грн
10+209.70 грн
25+198.28 грн
100+161.26 грн
250+152.99 грн
500+137.28 грн
1000+113.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SAK-XC2269I136F128LRAAKXUMA1 Infineon-SAK-XC2269I-136F128LR%20AA-DS-v01_03-EN.pdf?fileId=5546d46249cd10140149e7537dfe4199
SAK-XC2269I136F128LRAAKXUMA1
Виробник: Infineon Technologies
Description: 16 BIT C166 MICROXC2200 FAMILY (
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
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SAK-XC2220U-4F40VAA INFNS16681-1.pdf?t.download=true&u=5oefqw
SAK-XC2220U-4F40VAA
Виробник: Infineon Technologies
Description: 16-BIT C166 MICROCONTROLLER - XC
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TLE92104131QXXUMA1 Infineon-TLE92104-131QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597ebe7993962
TLE92104131QXXUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Features: Charge Pump
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE92104131QXXUMA1 Infineon-TLE92104-131QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597ebe7993962
TLE92104131QXXUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Packaging: Cut Tape (CT)
Features: Charge Pump
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1496 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+225.04 грн
10+162.65 грн
25+148.97 грн
100+125.74 грн
250+119.04 грн
500+114.99 грн
1000+109.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE9872QXA40XUMA1 Infineon-TLE9872QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c790ce34a8
TLE9872QXA40XUMA1
Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE987x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+266.85 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9862QXA40XUMA1 Infineon-TLE9862QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274f6cd4c0174fcecc8ed52a2
TLE9862QXA40XUMA1
Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE986x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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TLE92104232QXXUMA1 Infineon-TLE92104-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462758f5bd1017597fe443d3976
TLE92104232QXXUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Features: Charge Pump
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+133.86 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9185QXV33XUMA1 Infineon-TLE9185QX%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4af47454d25
TLE9185QXV33XUMA1
Виробник: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+151.73 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9185QXV33XUMA1 Infineon-TLE9185QX%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4af47454d25
TLE9185QXV33XUMA1
Виробник: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
на замовлення 9050 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+306.33 грн
10+222.47 грн
25+204.34 грн
100+173.09 грн
250+164.17 грн
500+158.80 грн
1000+151.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE9185QXXUMA1 Infineon-TLE9185QX-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4bfae244d2f
Виробник: Infineon Technologies
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
товару немає в наявності
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TLE9185QXXUMA1 Infineon-TLE9185QX-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7bb971ed017be4bfae244d2f
Виробник: Infineon Technologies
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+332.85 грн
10+234.34 грн
25+212.68 грн
100+177.26 грн
250+166.61 грн
500+160.18 грн
1000+152.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
6EDL7141XUMA1 Infineon-6EDL7141-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8e7ead30018ec7bd6aac46f3
6EDL7141XUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-48-78
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
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6EDL7141XUMA1 Infineon-6EDL7141-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8e7ead30018ec7bd6aac46f3
6EDL7141XUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-48-78
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 671 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+228.46 грн
10+164.05 грн
25+150.13 грн
100+126.50 грн
250+119.64 грн
500+115.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BGA7P320E6327XTSA1 Infineon-BGA7P320-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c88ae21230188bfb98e741423
BGA7P320E6327XTSA1
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 5G
Voltage - Supply: 3.15V ~ 3.45V
Gain: 34.4dB
Noise Figure: 3.5dB
P1dB: 27.8dBm
Test Frequency: 3.3GHz ~ 4.2GHz
Supplier Device Package: PG-TSNP-16-12
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IRFS23N20DTRRP irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143
IRFS23N20DTRRP
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
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BSC240N12NS3G INFNS15757-1.pdf?t.download=true&u=5oefqw
BSC240N12NS3G
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
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SIDC81D60E6YX1SA1
Виробник: Infineon Technologies
Description: DIODE GEN PURPOSE 600V
Packaging: Bulk
Part Status: Obsolete
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SIDC81D120F6YX1SA1
Виробник: Infineon Technologies
Description: DIODE GEN PURPOSE 1.2KV
Packaging: Bulk
Part Status: Obsolete
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DDB6U100N16RRBPSA1 Infineon-DDB6U100N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f24e52af
DDB6U100N16RRBPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товару немає в наявності
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F411MR12W2M1B76BOMA1
F411MR12W2M1B76BOMA1
Виробник: Infineon Technologies
Description: MOSFET 4N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
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IGT40R070D1ATMA1 Infineon-IGT40R070D1-DataSheet-v01_00-EN.pdf?fileId=5546d4627aa5d4f5017aa91bc8810c5c
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V
товару немає в наявності
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IST007N04NM6AUMA1 Infineon-IST007N04NM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a0172eb7e0dfd741d
IST007N04NM6AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 54A/440A HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+335.42 грн
10+213.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
REFICL8810LED43WBMTOBO1
REFICL8810LED43WBMTOBO1
Виробник: Infineon Technologies
Description: ICL8810 REF BOARD 43W BM
Packaging: Bulk
Features: Dimmable
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4427.19 грн
В кошику  од. на суму  грн.
IPLK70R900P7ATMA1 Infineon-IPLK70R900P7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7cdc391c017ce0bd2c1b2d5f
IPLK70R900P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
товару немає в наявності
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IPD100N06S403ATMA2 INFNS14378-1.pdf?t.download=true&u=5oefqw
IPD100N06S403ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+57.93 грн
Мінімальне замовлення: 2500
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CYW4329HKUBGT BCM4329_RevF_Sep19,2016.pdf
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Protocol: Bluetooth v2.1
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW4329FKUBGT BCM4329_RevF_Sep19,2016.pdf
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 182UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 182-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Protocol: Bluetooth v2.1
Supplier Device Package: 182-WLBGA (6.57x5.62)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I²C, I²S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW4325GKWBGT BCM4325_RevE_Sep19%2C2016.pdf
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 339XFBGA
Packaging: Tape & Reel (TR)
Package / Case: 339-XFBGA, WLCSP
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 7.5dBm
Protocol: 802.11a/b/g, Bluetooth v3.0
Current - Receiving: 81mA
Data Rate (Max): 54Mbps
Current - Transmitting: 295mA
Supplier Device Package: 339-WLCSP (6.51x5.81)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW4330FKUBGT CYW4330FKUBGT_Web.pdf
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW4330XKUBGT BCM4330_RevE_Sep19%2C2016.pdf
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 133WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 133-UFBGA, WLBGA
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Data Rate (Max): 72.2Mbps
Supplier Device Package: 133-WLBGA (4.89x5.33)
GPIO: 7
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20740A2KMLG
Виробник: Infineon Technologies
Description: IC BT BLE IEEE 802.15.4
Packaging: Bulk
DigiKey Programmable: Not Verified
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IPTG007N06NM5ATMA1 Infineon-IPTG007N06NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177aa3630457d4e
IPTG007N06NM5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+234.84 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IPTG007N06NM5ATMA1 Infineon-IPTG007N06NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177aa3630457d4e
IPTG007N06NM5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 53A/454A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
на замовлення 2535 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+526.23 грн
10+338.08 грн
100+276.80 грн
В кошику  од. на суму  грн.
ISZ080N10NM6ATMA1 Infineon-ISZ080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba696a5f02a5
ISZ080N10NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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ISZ080N10NM6ATMA1 Infineon-ISZ080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba696a5f02a5
ISZ080N10NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.04mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 4656 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+164.29 грн
10+101.35 грн
100+68.83 грн
500+51.54 грн
1000+49.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISC080N10NM6ATMA1 Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211
ISC080N10NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+46.19 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISC080N10NM6ATMA1 Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211
ISC080N10NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 9213 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+167.71 грн
10+103.57 грн
100+70.44 грн
500+52.80 грн
1000+51.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISC060N10NM6ATMA1 Infineon-ISC060N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9b35e3600c3
ISC060N10NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
товару немає в наявності
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ISC060N10NM6ATMA1 Infineon-ISC060N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9b35e3600c3
ISC060N10NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 2628 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+209.64 грн
10+130.68 грн
100+90.12 грн
500+69.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FZ3600R12HP4PHPSA1 infineon-fz3600r12hp4-ds-en.pdf?fileId=db3a3043163797a601165742504207c7
FZ3600R12HP4PHPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 4930A AGIHMB190-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 3.6kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 4930 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 19000 W
Current - Collector Cutoff (Max): 5 mA
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DDB6U104N16RRB37BPSA1 Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf
DDB6U104N16RRB37BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товару немає в наявності
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DDB6U104N16RRBPSA1 Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf?fileId=db3a30433e4143bd013e55b8a63a205f
DDB6U104N16RRBPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5143.38 грн
В кошику  од. на суму  грн.
DDB6U84N16RRBPSA1 Infineon-DDB6U84N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f59252b3
DDB6U84N16RRBPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товару немає в наявності
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