Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149481) > Сторінка 438 з 2492
| Фото | Назва | Виробник | Інформація |
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FF600R12ME7B11BPSA2 | Infineon Technologies |
Description: IGBT MOD 1200V 600A AG-ECONODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 35 µA Input Capacitance (Cies) @ Vce: 92 nF @ 25 V |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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1ED3131MC12HXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 8000Vpk Approval Agency: UL, VDE Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 280ns, 280ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
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1ED3131MC12HXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 5.5A Technology: Magnetic Coupling Current - Output High, Low: 5.5A, 5.5A Voltage - Isolation: 8000Vpk Approval Agency: UL, VDE Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 30ns, 30ns (Max) Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 280ns, 280ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 10V ~ 35V |
на замовлення 948 шт: термін постачання 21-31 дні (днів) |
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STT1900N16P55XPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: 1-Phase Controller - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Voltage - Off State: 1.6 kV |
товару немає в наявності |
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| BTS4880R | Infineon Technologies |
Description: BTS4880 - PROFET - SMART HIGH SIPackaging: Bulk Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C Output Configuration: High Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 11V ~ 45V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 625mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-36-12 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
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T830N14TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 1500A DO200ABPackaging: Tray Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 844 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 1500 A Voltage - Off State: 1.8 kV |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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| PXC1331CPNG003XTMA1 | Infineon Technologies |
Description: IFX PRIMARION CNTRLLER PG-VQFN-4 Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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CY4521 | Infineon Technologies |
Description: EVAL BOARD FOR CCG2Packaging: Bulk Function: USB Type-C® Type: Interface Contents: Board(s), Cable(s), Power Supply Utilized IC / Part: CCG2 Supplied Contents: Board(s), Cable(s), Power Supply Secondary Attributes: On-Board LEDs Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| IRFH4255DTRPBF/BKN | Infineon Technologies | Description: IRFH4255DTRPBF/BKN |
на замовлення 1229 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
| IRFHM4231TRPBF/BKN | Infineon Technologies | Description: IRFHM4231TRPBF/BKN |
на замовлення 404 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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BAS 16-02W E6327 | Infineon Technologies |
Description: DIODE GEN PURP 80V 200MA SCD80-2 |
товару немає в наявності |
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IPS65R400CEAKMA1 | Infineon Technologies |
Description: CONSUMERPackaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V Power Dissipation (Max): 118W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 320µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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IPP65R145CFD7AAKSA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOS PG-TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 420µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V |
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IDDD08G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 24A PGHDSOP101Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 401pF @ 1V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 27 µA @ 420 V |
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IDDD08G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 24A PGHDSOP101Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 401pF @ 1V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 27 µA @ 420 V |
на замовлення 1813 шт: термін постачання 21-31 дні (днів) |
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IDDD12G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 34A PGHDSOP101Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 594pF @ 1V, 1MHz Current - Average Rectified (Io): 34A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 40 µA @ 420 V |
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IDDD12G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 34A PGHDSOP101Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 594pF @ 1V, 1MHz Current - Average Rectified (Io): 34A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 40 µA @ 420 V |
на замовлення 1688 шт: термін постачання 21-31 дні (днів) |
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IDDD20G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 51A PGHDSOP101Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 970pF @ 1V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 67 µA @ 420 V |
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IDDD20G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 51A PGHDSOP101Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 970pF @ 1V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 67 µA @ 420 V |
на замовлення 410 шт: термін постачання 21-31 дні (днів) |
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IDDD04G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 13A PGHDSOP101Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 205pF @ 1V, 1MHz Current - Average Rectified (Io): 13A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 14 µA @ 420 V |
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IDDD04G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 13A PGHDSOP101Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 205pF @ 1V, 1MHz Current - Average Rectified (Io): 13A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 14 µA @ 420 V |
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S70GL02GP11FAIR23 | Infineon Technologies |
Description: IC FLASH 2GBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (11x13) Part Status: Obsolete Memory Interface: Parallel Access Time: 110 ns Memory Organization: 256M x 8, 128M x 16 |
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| P2000D45X168HPSA1 | Infineon Technologies |
Description: PRESS PACK IGBT BG-P16826K-1 Packaging: Tray Input: Standard Configuration: Single NTC Thermistor: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BCR430UXTSA2 | Infineon Technologies |
Description: IC LED DRV LIN PWM 100MA SOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Voltage - Output: 42V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Applications: LED Lighting Current - Output / Channel: 100mA Internal Switch(s): No Topology: Constant Current Supplier Device Package: PG-SOT23-6-1 Dimming: PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 42V Part Status: Active |
на замовлення 7627 шт: термін постачання 21-31 дні (днів) |
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IPB50N10S3L16ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 50A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V |
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IPB50N10S3L16ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 50A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V |
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IPG20N10S436AATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 100V 20A 8TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 16µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 65000 шт: термін постачання 21-31 дні (днів) |
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BSC016N06NSSCATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-WSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 234A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 95µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V |
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| BGM7LLHM4L12E6327XTSA1 | Infineon Technologies |
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12Packaging: Bulk Package / Case: 12-XFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 700MHz ~ 2.7GHz RF Type: LTE Voltage - Supply: 1.5V ~ 3.3V Gain: 13dB Current - Supply: 4.5mA Supplier Device Package: TSLP-12-4 Part Status: Obsolete |
на замовлення 682500 шт: термін постачання 21-31 дні (днів) |
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IPB47N10S33ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 47A TO263-3 |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
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AUIRFR1010Z | Infineon Technologies |
Description: AUIRFR1010 - 55V-60V N-CHANNEL APackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D-PAK (TO-252AA) Part Status: Active Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V |
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| PXE1110ADM-G001 | Infineon Technologies | Description: IC CONTROLLER |
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SPD04P10PGBTMA1 | Infineon Technologies |
Description: MOSFET P-CH 100V 4A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 380µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V |
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SPD04P10PGBTMA1 | Infineon Technologies |
Description: MOSFET P-CH 100V 4A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 380µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V |
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| ACCESSORY33234NOSA1 | Infineon Technologies | Description: ACCESSORY IGBT MODULEE |
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| FS20R06XL4BOMA1 | Infineon Technologies |
Description: IGBT MODULE 600V 26A 89W EASY Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 20A NTC Thermistor: Yes Supplier Device Package: AG-EASY750-1 Part Status: Obsolete Current - Collector (Ic) (Max): 26 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 89 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 900 pF @ 25 V |
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SAKXC2286M104F80LAA | Infineon Technologies |
Description: 16-BIT C166 MMC - XC2200 FAMILYPackaging: Bulk Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 832KB (832K x 8) RAM Size: 50K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Number of I/O: 118 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | ||||||||||||||
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SAK-XC2287M-72F80L AA | Infineon Technologies |
Description: IC MCU 16/32B 576KB FLSH 144LQFPPackaging: Tape & Reel (TR) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 576KB (576K x 8) RAM Size: 50K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 24x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Number of I/O: 118 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE8082ESXUMA1 | Infineon Technologies |
Description: ENGINECONTR_SMALL_ENGINE, PG-TSDPackaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 6V ~ 40V Applications: Engine Management Current - Supply: 16mA (Max) Supplier Device Package: PG-TSDSO-24 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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TLE8082ESXUMA1 | Infineon Technologies |
Description: ENGINECONTR_SMALL_ENGINE, PG-TSDPackaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 6V ~ 40V Applications: Engine Management Current - Supply: 16mA (Max) Supplier Device Package: PG-TSDSO-24 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 23999 шт: термін постачання 21-31 дні (днів) |
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TLE8088EMXUMA1 | Infineon Technologies |
Description: ENGINECONTRPackaging: Cut Tape (CT) Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Voltage - Supply: 6V ~ 18V Applications: Small Engine Supplier Device Package: PG-SSOP-24 Part Status: Active Grade: Automotive |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SAK-XC2269I136F128LRAAKXUMA1 | Infineon Technologies |
Description: 16 BIT C166 MICROXC2200 FAMILY (Packaging: Bulk Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 128MHz Program Memory Size: 1MB (1M x 8) RAM Size: 90K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x12b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: DMA, I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Part Status: Active Number of I/O: 76 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SAK-XC2220U-4F40VAA | Infineon Technologies |
Description: 16-BIT C166 MICROCONTROLLER - XC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE92104131QXXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 48VQFNPackaging: Tape & Reel (TR) Features: Charge Pump Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: Analog, Logic, PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 40Ohm Applications: DC Motors, General Purpose Supplier Device Package: PG-VQFN-48-29 Fault Protection: Over Temperature, Short Circuit Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE92104131QXXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 48VQFNPackaging: Cut Tape (CT) Features: Charge Pump Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: Analog, Logic, PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 40Ohm Applications: DC Motors, General Purpose Supplier Device Package: PG-VQFN-48-29 Fault Protection: Over Temperature, Short Circuit Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1496 шт: термін постачання 21-31 дні (днів) |
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TLE9872QXA40XUMA1 | Infineon Technologies |
Description: EMBEDDED POWERPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: LINbus, SPI, SSC, UART/USART RAM Size: 8K x 8 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 27V Controller Series: TLE987x Program Memory Type: FLASH (256kB) Core Processor: ARM® Cortex®-M3 Supplier Device Package: PG-VQFN-48-29 Part Status: Active Number of I/O: 10 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE9862QXA40XUMA1 | Infineon Technologies |
Description: EMBEDDED POWERPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: LINbus, SPI, SSC, UART/USART RAM Size: 8K x 8 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 27V Controller Series: TLE986x Program Memory Type: FLASH (256kB) Core Processor: ARM® Cortex®-M3 Supplier Device Package: PG-VQFN-48-29 Number of I/O: 10 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE92104232QXXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 48VQFNPackaging: Tape & Reel (TR) Features: Charge Pump Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: Analog, Logic, PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 40Ohm Applications: DC Motors, General Purpose Supplier Device Package: PG-VQFN-48-29 Fault Protection: Short Circuit Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE9185QXV33XUMA1 | Infineon Technologies |
Description: BLDC_DRIVER_IC PG-VQFN-48Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 250mA Interface: PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 6V ~ 28V Technology: NMOS Voltage - Load: 3V ~ 28V Supplier Device Package: PG-VQFN-48-29 Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active Grade: Automotive |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE9185QXV33XUMA1 | Infineon Technologies |
Description: BLDC_DRIVER_IC PG-VQFN-48Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 250mA Interface: PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 6V ~ 28V Technology: NMOS Voltage - Load: 3V ~ 28V Supplier Device Package: PG-VQFN-48-29 Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active Grade: Automotive |
на замовлення 9050 шт: термін постачання 21-31 дні (днів) |
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| TLE9185QXXUMA1 | Infineon Technologies |
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 250mA Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 4.5V ~ 28V Applications: General Purpose Technology: NMOS Supplier Device Package: PG-VQFN-48-29 Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLE9185QXXUMA1 | Infineon Technologies |
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 250mA Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 4.5V ~ 28V Applications: General Purpose Technology: NMOS Supplier Device Package: PG-VQFN-48-29 Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
на замовлення 2485 шт: термін постачання 21-31 дні (днів) |
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6EDL7141XUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 48VFQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 5.5V ~ 60V Input Type: Non-Inverting Supplier Device Package: PG-VQFN-48-78 Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 3 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 1.5A, 1.5A Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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6EDL7141XUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 48VFQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 5.5V ~ 60V Input Type: Non-Inverting Supplier Device Package: PG-VQFN-48-78 Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 3 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 1.5A, 1.5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 671 шт: термін постачання 21-31 дні (днів) |
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BGA7P320E6327XTSA1 | Infineon Technologies |
Description: WIRELESS INFRASTRUCTURE PG-TSNP-Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 16-WFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 3.3GHz ~ 4.2GHz RF Type: 5G Voltage - Supply: 3.15V ~ 3.45V Gain: 34.4dB Noise Figure: 3.5dB P1dB: 27.8dBm Test Frequency: 3.3GHz ~ 4.2GHz Supplier Device Package: PG-TSNP-16-12 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFS23N20DTRRP | Infineon Technologies |
Description: MOSFET N-CH 200V 24A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
BSC240N12NS3G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SIDC81D60E6YX1SA1 | Infineon Technologies |
Description: DIODE GEN PURPOSE 600V Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC81D120F6YX1SA1 | Infineon Technologies |
Description: DIODE GEN PURPOSE 1.2KV Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
DDB6U100N16RRBPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2A-211Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A NTC Thermistor: No Supplier Device Package: AG-ECONO2A Part Status: Last Time Buy Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| FF600R12ME7B11BPSA2 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A AG-ECONOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 35 µA
Input Capacitance (Cies) @ Vce: 92 nF @ 25 V
Description: IGBT MOD 1200V 600A AG-ECONOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 35 µA
Input Capacitance (Cies) @ Vce: 92 nF @ 25 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11294.76 грн |
| 10+ | 9737.12 грн |
| 1ED3131MC12HXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
товару немає в наявності
В кошику
од. на суму грн.
| 1ED3131MC12HXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
Description: DIGITAL ISO 8KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 5.5A
Technology: Magnetic Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 8000Vpk
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 280ns, 280ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 948 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 166.91 грн |
| 10+ | 119.15 грн |
| 25+ | 108.77 грн |
| 100+ | 91.34 грн |
| 250+ | 86.23 грн |
| 500+ | 83.14 грн |
| STT1900N16P55XPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Voltage - Off State: 1.6 kV
товару немає в наявності
В кошику
од. на суму грн.
| BTS4880R |
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Виробник: Infineon Technologies
Description: BTS4880 - PROFET - SMART HIGH SI
Packaging: Bulk
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-12
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: BTS4880 - PROFET - SMART HIGH SI
Packaging: Bulk
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 625mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-12
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| T830N14TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 844 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 844 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
на замовлення 18 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11983.70 грн |
| 18+ | 10246.63 грн |
| PXC1331CPNG003XTMA1 |
Виробник: Infineon Technologies
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Tape & Reel (TR)
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 191.19 грн |
| CY4521 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR CCG2
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CCG2
Supplied Contents: Board(s), Cable(s), Power Supply
Secondary Attributes: On-Board LEDs
Part Status: Active
Description: EVAL BOARD FOR CCG2
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CCG2
Supplied Contents: Board(s), Cable(s), Power Supply
Secondary Attributes: On-Board LEDs
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4866.04 грн |
| IRFH4255DTRPBF/BKN |
Виробник: Infineon Technologies
Description: IRFH4255DTRPBF/BKN
Description: IRFH4255DTRPBF/BKN
на замовлення 1229 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IRFHM4231TRPBF/BKN |
Виробник: Infineon Technologies
Description: IRFHM4231TRPBF/BKN
Description: IRFHM4231TRPBF/BKN
на замовлення 404 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BAS 16-02W E6327 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 80V 200MA SCD80-2
Description: DIODE GEN PURP 80V 200MA SCD80-2
товару немає в наявності
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| IPS65R400CEAKMA1 |
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Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2435A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 465+ | 47.48 грн |
| IPP65R145CFD7AAKSA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Description: AUTOMOTIVE_COOLMOS PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
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| IDDD08G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 24A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Description: DIODE SIC 650V 24A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
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| IDDD08G65C6XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIC 650V 24A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Description: DIODE SIC 650V 24A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
на замовлення 1813 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 307.43 грн |
| 10+ | 193.21 грн |
| 100+ | 135.83 грн |
| 500+ | 113.14 грн |
| IDDD12G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
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од. на суму грн.
| IDDD12G65C6XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
на замовлення 1688 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 408.77 грн |
| IDDD20G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 51A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Description: DIODE SIC 650V 51A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
товару немає в наявності
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од. на суму грн.
| IDDD20G65C6XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIC 650V 51A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Description: DIODE SIC 650V 51A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
на замовлення 410 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 588.45 грн |
| 10+ | 388.87 грн |
| 100+ | 283.81 грн |
| IDDD04G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
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| IDDD04G65C6XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
товару немає в наявності
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од. на суму грн.
| S70GL02GP11FAIR23 |
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Виробник: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
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| P2000D45X168HPSA1 |
Виробник: Infineon Technologies
Description: PRESS PACK IGBT BG-P16826K-1
Packaging: Tray
Input: Standard
Configuration: Single
NTC Thermistor: No
Part Status: Obsolete
Description: PRESS PACK IGBT BG-P16826K-1
Packaging: Tray
Input: Standard
Configuration: Single
NTC Thermistor: No
Part Status: Obsolete
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| BCR430UXTSA2 |
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Виробник: Infineon Technologies
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
на замовлення 7627 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.84 грн |
| 21+ | 15.83 грн |
| 25+ | 14.01 грн |
| 100+ | 11.31 грн |
| 250+ | 10.44 грн |
| 500+ | 9.91 грн |
| 1000+ | 9.32 грн |
| IPB50N10S3L16ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
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| IPB50N10S3L16ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Description: MOSFET N-CH 100V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
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| IPG20N10S436AATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 37.30 грн |
| 10000+ | 35.44 грн |
| BSC016N06NSSCATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
Description: TRENCH 40<-<100V PG-WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 95µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
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| BGM7LLHM4L12E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Packaging: Bulk
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 2.7GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.5mA
Supplier Device Package: TSLP-12-4
Part Status: Obsolete
Description: IC AMP LTE 700MHZ-2.7GHZ TSLP12
Packaging: Bulk
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 700MHz ~ 2.7GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.3V
Gain: 13dB
Current - Supply: 4.5mA
Supplier Device Package: TSLP-12-4
Part Status: Obsolete
на замовлення 682500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 175+ | 124.84 грн |
| IPB47N10S33ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 47A TO263-3
Description: MOSFET N-CH 100V 47A TO263-3
на замовлення 446 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 311+ | 78.52 грн |
| AUIRFR1010Z |
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Виробник: Infineon Technologies
Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
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| PXE1110ADM-G001 |
Виробник: Infineon Technologies
Description: IC CONTROLLER
Description: IC CONTROLLER
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| SPD04P10PGBTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
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| SPD04P10PGBTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Description: MOSFET P-CH 100V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
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| ACCESSORY33234NOSA1 |
Виробник: Infineon Technologies
Description: ACCESSORY IGBT MODULEE
Description: ACCESSORY IGBT MODULEE
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| FS20R06XL4BOMA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 26A 89W EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY750-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
Description: IGBT MODULE 600V 26A 89W EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY750-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
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| SAKXC2286M104F80LAA |
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Виробник: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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| SAK-XC2287M-72F80L AA |
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Виробник: Infineon Technologies
Description: IC MCU 16/32B 576KB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 576KB FLSH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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| TLE8082ESXUMA1 |
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Виробник: Infineon Technologies
Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 192.36 грн |
| TLE8082ESXUMA1 |
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Виробник: Infineon Technologies
Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: ENGINECONTR_SMALL_ENGINE, PG-TSD
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 40V
Applications: Engine Management
Current - Supply: 16mA (Max)
Supplier Device Package: PG-TSDSO-24
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 23999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 378.11 грн |
| 10+ | 276.61 грн |
| 25+ | 254.84 грн |
| 100+ | 216.76 грн |
| 250+ | 206.06 грн |
| 500+ | 199.62 грн |
| 1000+ | 191.13 грн |
| TLE8088EMXUMA1 |
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Виробник: Infineon Technologies
Description: ENGINECONTR
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 6V ~ 18V
Applications: Small Engine
Supplier Device Package: PG-SSOP-24
Part Status: Active
Grade: Automotive
Description: ENGINECONTR
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 6V ~ 18V
Applications: Small Engine
Supplier Device Package: PG-SSOP-24
Part Status: Active
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 241.85 грн |
| 10+ | 208.70 грн |
| 25+ | 197.34 грн |
| 100+ | 160.49 грн |
| 250+ | 152.27 грн |
| 500+ | 136.63 грн |
| 1000+ | 113.34 грн |
| SAK-XC2269I136F128LRAAKXUMA1 |
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Виробник: Infineon Technologies
Description: 16 BIT C166 MICROXC2200 FAMILY (
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
Description: 16 BIT C166 MICROXC2200 FAMILY (
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
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| SAK-XC2220U-4F40VAA |
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Виробник: Infineon Technologies
Description: 16-BIT C166 MICROCONTROLLER - XC
Description: 16-BIT C166 MICROCONTROLLER - XC
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| TLE92104131QXXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Features: Charge Pump
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC HALF BRIDGE DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Features: Charge Pump
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| TLE92104131QXXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Packaging: Cut Tape (CT)
Features: Charge Pump
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC HALF BRIDGE DRIVER 48VQFN
Packaging: Cut Tape (CT)
Features: Charge Pump
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1496 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.97 грн |
| 10+ | 161.88 грн |
| 25+ | 148.27 грн |
| 100+ | 125.14 грн |
| 250+ | 118.47 грн |
| 500+ | 114.45 грн |
| 1000+ | 109.32 грн |
| TLE9872QXA40XUMA1 |
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Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE987x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE987x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 265.58 грн |
| TLE9862QXA40XUMA1 |
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Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE986x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE986x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Number of I/O: 10
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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| TLE92104232QXXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Features: Charge Pump
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC HALF BRIDGE DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Features: Charge Pump
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Analog, Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 40Ohm
Applications: DC Motors, General Purpose
Supplier Device Package: PG-VQFN-48-29
Fault Protection: Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 133.22 грн |
| TLE9185QXV33XUMA1 |
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Виробник: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 151.01 грн |
| TLE9185QXV33XUMA1 |
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Виробник: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 3V ~ 28V
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Grade: Automotive
на замовлення 9050 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 304.87 грн |
| 10+ | 221.42 грн |
| 25+ | 203.37 грн |
| 100+ | 172.27 грн |
| 250+ | 163.39 грн |
| 500+ | 158.04 грн |
| 1000+ | 151.13 грн |
| TLE9185QXXUMA1 |
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Виробник: Infineon Technologies
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
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| TLE9185QXXUMA1 |
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Виробник: Infineon Technologies
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DVR 3PH 5V 250MA 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-VQFN-48-29
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 331.27 грн |
| 10+ | 233.22 грн |
| 25+ | 211.67 грн |
| 100+ | 176.42 грн |
| 250+ | 165.82 грн |
| 500+ | 159.42 грн |
| 1000+ | 151.63 грн |
| 6EDL7141XUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-48-78
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-48-78
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
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од. на суму грн.
| 6EDL7141XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-48-78
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-48-78
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 671 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 227.38 грн |
| 10+ | 163.27 грн |
| 25+ | 149.41 грн |
| 100+ | 125.90 грн |
| 250+ | 119.07 грн |
| 500+ | 114.96 грн |
| BGA7P320E6327XTSA1 |
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Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 5G
Voltage - Supply: 3.15V ~ 3.45V
Gain: 34.4dB
Noise Figure: 3.5dB
P1dB: 27.8dBm
Test Frequency: 3.3GHz ~ 4.2GHz
Supplier Device Package: PG-TSNP-16-12
Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 5G
Voltage - Supply: 3.15V ~ 3.45V
Gain: 34.4dB
Noise Figure: 3.5dB
P1dB: 27.8dBm
Test Frequency: 3.3GHz ~ 4.2GHz
Supplier Device Package: PG-TSNP-16-12
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| IRFS23N20DTRRP |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
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| BSC240N12NS3G |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
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| SIDC81D60E6YX1SA1 |
Виробник: Infineon Technologies
Description: DIODE GEN PURPOSE 600V
Packaging: Bulk
Part Status: Obsolete
Description: DIODE GEN PURPOSE 600V
Packaging: Bulk
Part Status: Obsolete
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| SIDC81D120F6YX1SA1 |
Виробник: Infineon Technologies
Description: DIODE GEN PURPOSE 1.2KV
Packaging: Bulk
Part Status: Obsolete
Description: DIODE GEN PURPOSE 1.2KV
Packaging: Bulk
Part Status: Obsolete
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| DDB6U100N16RRBPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2A
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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