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IRF1404STRRPBF IRF1404STRRPBF Infineon Technologies irf1404spbf.pdf?fileId=5546d462533600a4015355daf0f118b2 Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
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IKQB200N75CP2AKSA1 IKQB200N75CP2AKSA1 Infineon Technologies Infineon-IKQB200N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8779172a0187bc4aa0161e6b Description: IGBT 750V 200A TO247-3-51
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 200A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 95ns/407ns
Switching Energy: 14.4mJ (on), 6.9mJ (off)
Test Condition: 450V, 200A, 4.8Ohm, 15V
Gate Charge: 797 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 937 W
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
1+932.11 грн
30+539.80 грн
120+461.43 грн
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IRFR3411PBF IRFR3411PBF Infineon Technologies irfr3411pbf.pdf?fileId=5546d462533600a401535631077c2093 description Description: MOSFET N-CH 100V 32A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
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BCW60CE6327 BCW60CE6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
на замовлення 100918 шт:
термін постачання 21-31 дні (днів)
7397+3.03 грн
Мінімальне замовлення: 7397
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IRG4PC40UD-EPBF IRG4PC40UD-EPBF Infineon Technologies irg4pc40udpbf.pdf?fileId=5546d462533600a4015356442ac722dc Description: IGBT 600V 40A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 54ns/110ns
Switching Energy: 710µJ (on), 350µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
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IRG4PC40UPBF IRG4PC40UPBF Infineon Technologies fundamentals-of-power-semiconductors description Description: IGBT 600V 40A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 34ns/110ns
Switching Energy: 320µJ (on), 350µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
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CY7C185-35VC CY7C185-35VC Infineon Technologies CY7C185.pdf Description: IC SRAM 64KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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CY8C22213-24PVI CY8C22213-24PVI Infineon Technologies CY8C22113, 22213.pdf Description: IC MCU 8BIT 2KB FLASH 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 2x14b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 16
DigiKey Programmable: Not Verified
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IRF2907ZSPBF IRF2907ZSPBF Infineon Technologies irf2907zpbf.pdf?fileId=5546d462533600a4015355ded98f1902 Description: MOSFET N-CH 75V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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IRGR2B60KDTRLPBF IRGR2B60KDTRLPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 6.3A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: NPT
Td (on/off) @ 25°C: 11ns/150ns
Switching Energy: 74µJ (on), 39µJ (off)
Test Condition: 400V, 2A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 6.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 35 W
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KP464EXTMA1 KP464EXTMA1 Infineon Technologies Infineon-KP464E-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188bf6d9a0611db Description: XENSIV - KP464E HIGHLY SENSITIVE
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.145PSI (±1kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
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KP464EXTMA1 KP464EXTMA1 Infineon Technologies Infineon-KP464E-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188bf6d9a0611db Description: XENSIV - KP464E HIGHLY SENSITIVE
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.145PSI (±1kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
на замовлення 3099 шт:
термін постачання 21-31 дні (днів)
2+209.99 грн
5+180.16 грн
10+172.00 грн
25+152.36 грн
50+146.16 грн
100+140.48 грн
500+126.95 грн
1000+122.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
KP466PXTMA1 KP466PXTMA1 Infineon Technologies Infineon-KP466-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188bf7fe19111df Description: XENSIV - KP466 HIGHLY SENSITIVE
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Pressure Type: Absolute
Accuracy: ±0.145PSI (±1kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
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KP466PXTMA1 KP466PXTMA1 Infineon Technologies Infineon-KP466-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188bf7fe19111df Description: XENSIV - KP466 HIGHLY SENSITIVE
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Pressure Type: Absolute
Accuracy: ±0.145PSI (±1kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
на замовлення 2794 шт:
термін постачання 21-31 дні (днів)
2+209.99 грн
5+180.16 грн
10+172.00 грн
25+152.36 грн
50+146.16 грн
100+140.48 грн
500+126.95 грн
1000+122.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CYT4DNJBRCQ1BZSGS Infineon Technologies Description: IC MCU 32BIT 6.188MB FLSH 327BGA
Packaging: Tray
Package / Case: 327-BGA
Mounting Type: Surface Mount
Speed: 320MHz
Program Memory Size: 6.188MB (6.188M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, LINbus, SPI
Peripherals: DMA, I²S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-BGA
Number of I/O: 168
DigiKey Programmable: Not Verified
на замовлення 890 шт:
термін постачання 21-31 дні (днів)
1+8571.56 грн
10+7828.16 грн
25+7615.12 грн
90+6646.75 грн
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IR2153PBF IR2153PBF Infineon Technologies IR2153_D_S_PbF_5-21-20.pdf description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
на замовлення 1284 шт:
термін постачання 21-31 дні (днів)
3+150.23 грн
10+106.86 грн
50+91.74 грн
100+81.69 грн
250+77.04 грн
500+74.24 грн
1000+70.75 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TDA48632GXUMA2 TDA48632GXUMA2 Infineon Technologies tda4863-2_v2-1.pdf?folderId=db3a304412b407950112b418029a24aa&fileId=db3a304412b407950112b41802de24ab Description: IC PFC CTRLR DCM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8-3
Current - Startup: 20 µA
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TDA48632GXUMA2 TDA48632GXUMA2 Infineon Technologies tda4863-2_v2-1.pdf?folderId=db3a304412b407950112b418029a24aa&fileId=db3a304412b407950112b41802de24ab Description: IC PFC CTRLR DCM 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8-3
Current - Startup: 20 µA
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IRFR18N15DTRLP IRFR18N15DTRLP Infineon Technologies irfr18n15dpbf.pdf?fileId=5546d462533600a40153562d7a002069 Description: MOSFET N-CH 150V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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IRFR18N15DTRPBF IRFR18N15DTRPBF Infineon Technologies irfr18n15dpbf.pdf?fileId=5546d462533600a40153562d7a002069 Description: MOSFET N-CH 150V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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IRFR18N15DTRPBF IRFR18N15DTRPBF Infineon Technologies irfr18n15dpbf.pdf?fileId=5546d462533600a40153562d7a002069 Description: MOSFET N-CH 150V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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IRFI3205PBF IRFI3205PBF Infineon Technologies irfi3205pbf.pdf?fileId=5546d462533600a401535623c5e91f6b description Description: MOSFET N-CH 55V 64A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 34A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
на замовлення 3611 шт:
термін постачання 21-31 дні (днів)
2+246.51 грн
50+119.62 грн
100+108.21 грн
500+82.77 грн
1000+76.74 грн
2000+74.49 грн
Мінімальне замовлення: 2
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S25HL01GTDPMHM010 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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AUIRFR4105Z AUIRFR4105Z Infineon Technologies AUIRF%28R%2CU%294105Z.pdf Description: MOSFET N-CH 55V 20A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IRLZ24NSPBF IRLZ24NSPBF Infineon Technologies irlz24nspbf.pdf description Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
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S29GL064S70TFI043 Infineon Technologies Description: PNOR
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
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24VSHIELDBTT6030TOBO1 24VSHIELDBTT6030TOBO1 Infineon Technologies Infineon-24V%20protected%20switch%20shield_PB.pdf-PB-v01_00-EN.pdf?fileId=5546d46255dd933d015601e282682ac5 Description: EVAL 24V PROTECT SWITCH SHIELD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTT6020-1ERA, BTT6030-2ERA
Platform: Arduino
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+3698.54 грн
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CY8C4245LTI-M445 CY8C4245LTI-M445 Infineon Technologies download Description: IC MCU 32BIT 32KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
1+434.93 грн
10+319.63 грн
25+294.96 грн
80+254.82 грн
260+238.79 грн
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IPB60R280CFD7ATMA1 IPB60R280CFD7ATMA1 Infineon Technologies Infineon-IPB60R280CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0d76e1ac5 Description: MOSFET N-CH 600V 9A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
2+219.95 грн
10+136.76 грн
100+94.25 грн
500+71.40 грн
Мінімальне замовлення: 2
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IPD60R280P7SE8228AUMA1 IPD60R280P7SE8228AUMA1 Infineon Technologies infineon-ipd60r280p7-datasheet-en.pdf Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
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IPS60R280PFD7SAKMA1 IPS60R280PFD7SAKMA1 Infineon Technologies Infineon-IPS60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed5dc2db339cc Description: CONSUMER PG-TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
381+60.48 грн
Мінімальне замовлення: 381
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IPA60R280P7SE8228XKSA1 IPA60R280P7SE8228XKSA1 Infineon Technologies Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 699750 шт:
термін постачання 21-31 дні (днів)
419+51.35 грн
Мінімальне замовлення: 419
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IPA60R280P7SE8228XKSA1 IPA60R280P7SE8228XKSA1 Infineon Technologies Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
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IPA60R280C6XKSA1 IPA60R280C6XKSA1 Infineon Technologies IPA60R280C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e01239ddb46a66f73 Description: MOSFET N-CH 600V 13.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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IPP60R280E6XKSA1 IPP60R280E6XKSA1 Infineon Technologies IPP60R280E6_2.0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281fa6ed7144f7 Description: MOSFET N-CH 600V 13.8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 2027 шт:
термін постачання 21-31 дні (днів)
214+107.18 грн
Мінімальне замовлення: 214
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IPD380P06NMATMA1 IPD380P06NMATMA1 Infineon Technologies Infineon-IPD380P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2ea8300b7 Description: MOSFET P-CH 60V 35A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+49.62 грн
Мінімальне замовлення: 2500
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IR21091STRPBF IR21091STRPBF Infineon Technologies ir21091.pdf?fileId=5546d462533600a4015355c7f66f167c Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR21091STRPBF IR21091STRPBF Infineon Technologies ir21091.pdf?fileId=5546d462533600a4015355c7f66f167c Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR21091SPBF IR21091SPBF Infineon Technologies ir21091.pdf?fileId=5546d462533600a4015355c7f66f167c Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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EVAL6ED2231S12TM1TOBO1 EVAL6ED2231S12TM1TOBO1 Infineon Technologies EVAL-6ED2231S12TM1_V1.0_UG_6-2-22.pdf Description: EVAL BOARD
Packaging: Bulk
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+60472.37 грн
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IRF1010ZSPBF IRF1010ZSPBF Infineon Technologies irf1010z.pdf description Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
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AUIRF1010ZS AUIRF1010ZS Infineon Technologies auirf1010z.pdf?fileId=5546d462533600a4015355a89a4a1364 Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPD50N03S207ATMA1 IPD50N03S207ATMA1 Infineon Technologies IPD50N03S2-07_green.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270d5a3b72 Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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TLF11251LDXUMA1 TLF11251LDXUMA1 Infineon Technologies Infineon-TLF11251LD-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a0177241a02695830 Description: IC GATE DRVR HALF-BRIDGE 10TDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSON-10-2
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+90.96 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TLF11251LDXUMA1 TLF11251LDXUMA1 Infineon Technologies Infineon-TLF11251LD-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a0177241a02695830 Description: IC GATE DRVR HALF-BRIDGE 10TDFN
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSON-10-2
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 11652 шт:
термін постачання 21-31 дні (днів)
2+193.39 грн
10+138.19 грн
25+126.29 грн
100+106.17 грн
250+100.28 грн
500+96.73 грн
1000+92.27 грн
2500+89.24 грн
Мінімальне замовлення: 2
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IRLZ44ZSPBF IRLZ44ZSPBF Infineon Technologies irlz44zpbf.pdf?fileId=5546d462533600a4015356722836272a Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
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AUIRLZ44Z AUIRLZ44Z Infineon Technologies auirlz44z.pdf?fileId=5546d462533600a4015355befab71595 Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IRMCK343TR IRMCK343TR Infineon Technologies irmck343.pdf?fileId=5546d462533600a401535672d6df2760 Description: IC MOTOR DRIVER 64MQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: IGBT
Supplier Device Package: 64-MQFP (10x10)
Motor Type - AC, DC: AC, Synchronous
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IRMCK343TY IRMCK343TY Infineon Technologies irmck343.pdf?fileId=5546d462533600a401535672d6df2760 Description: IC MTRDRV 1.62-1.98/3-3.6V 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I²C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: IGBT
Supplier Device Package: 64-QFP
Motor Type - AC, DC: AC, Synchronous
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MB15E03SLPFV1-G-ER-6E1 MB15E03SLPFV1-G-ER-6E1 Infineon Technologies download Description: IC FREQ SYNTH 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 1.2GHz
Type: Frequency Synthesizer
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 16-SSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY2308SXI-2 CY2308SXI-2 Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CYV15G0204TRB-BGC CYV15G0204TRB-BGC Infineon Technologies CYV15G0204TRB.pdf Description: IC SERDES HOTLINK 256LBGA
Packaging: Tray
Package / Case: 256-BGA Exposed Pad
Output Type: PECL
Mounting Type: Surface Mount
Number of Outputs: 4/20
Function: Serializer/Deserializer
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.3V
Data Rate: 1.485Gbps
Input Type: LVTTL
Number of Inputs: 20/4
Supplier Device Package: 256-L2BGA (27x27)
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
10+2629.57 грн
Мінімальне замовлення: 10
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IRGP30B60KD-EP IRGP30B60KD-EP Infineon Technologies irgp30b60kd-epbf.pdf?fileId=5546d462533600a401535655b5382442 Description: IGBT NPT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 125 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/185ns
Switching Energy: 350µJ (on), 825µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 304 W
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FM28V102A-TGTR FM28V102A-TGTR Infineon Technologies Infineon-FM28V102A_1-Mbit_(64_K_16)_F-RAM_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8c591413e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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FM28V202A-TGTR FM28V202A-TGTR Infineon Technologies Infineon-FM28V202A_2-Mbit_(128_K_16)_F-RAM_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8b6684132&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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CY9BF114NBGL-G-F4K9E1 Infineon Technologies Description: IC MCU 32BIT 256KB FLASH 112FBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)
1+1445.89 грн
10+1279.80 грн
25+1226.72 грн
198+1014.32 грн
396+964.54 грн
594+902.31 грн
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CY9BF106RAPMC-G-UNE2 CY9BF106RAPMC-G-UNE2 Infineon Technologies download Description: IC MCU 32BIT 512KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
1+1114.71 грн
10+853.38 грн
25+798.35 грн
84+734.02 грн
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CY9BF116RPMC-G-F4FKE1 CY9BF116RPMC-G-F4FKE1 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421 Description: IC MCU 32BIT 512KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 103
DigiKey Programmable: Not Verified
на замовлення 837 шт:
термін постачання 21-31 дні (днів)
1+554.45 грн
10+482.28 грн
25+459.87 грн
84+374.73 грн
252+357.89 грн
504+326.31 грн
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CY9BF112NPQC-G-JNE2 CY9BF112NPQC-G-JNE2 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (20x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9BF112RPMC-G-JNE2 CY9BF112RPMC-G-JNE2 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 103
DigiKey Programmable: Not Verified
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IRF1404STRRPBF irf1404spbf.pdf?fileId=5546d462533600a4015355daf0f118b2
IRF1404STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
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IKQB200N75CP2AKSA1 Infineon-IKQB200N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8779172a0187bc4aa0161e6b
IKQB200N75CP2AKSA1
Виробник: Infineon Technologies
Description: IGBT 750V 200A TO247-3-51
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 200A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 95ns/407ns
Switching Energy: 14.4mJ (on), 6.9mJ (off)
Test Condition: 450V, 200A, 4.8Ohm, 15V
Gate Charge: 797 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 937 W
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+932.11 грн
30+539.80 грн
120+461.43 грн
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IRFR3411PBF description irfr3411pbf.pdf?fileId=5546d462533600a401535631077c2093
IRFR3411PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 32A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
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BCW60CE6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCW60CE6327
Виробник: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
на замовлення 100918 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7397+3.03 грн
Мінімальне замовлення: 7397
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IRG4PC40UD-EPBF irg4pc40udpbf.pdf?fileId=5546d462533600a4015356442ac722dc
IRG4PC40UD-EPBF
Виробник: Infineon Technologies
Description: IGBT 600V 40A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 54ns/110ns
Switching Energy: 710µJ (on), 350µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
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IRG4PC40UPBF description fundamentals-of-power-semiconductors
IRG4PC40UPBF
Виробник: Infineon Technologies
Description: IGBT 600V 40A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 34ns/110ns
Switching Energy: 320µJ (on), 350µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
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CY7C185-35VC CY7C185.pdf
CY7C185-35VC
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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CY8C22213-24PVI CY8C22113, 22213.pdf
CY8C22213-24PVI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 2KB FLASH 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 2x14b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 16
DigiKey Programmable: Not Verified
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IRF2907ZSPBF irf2907zpbf.pdf?fileId=5546d462533600a4015355ded98f1902
IRF2907ZSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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IRGR2B60KDTRLPBF fundamentals-of-power-semiconductors
IRGR2B60KDTRLPBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 6.3A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: NPT
Td (on/off) @ 25°C: 11ns/150ns
Switching Energy: 74µJ (on), 39µJ (off)
Test Condition: 400V, 2A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 6.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 35 W
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KP464EXTMA1 Infineon-KP464E-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188bf6d9a0611db
KP464EXTMA1
Виробник: Infineon Technologies
Description: XENSIV - KP464E HIGHLY SENSITIVE
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.145PSI (±1kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
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KP464EXTMA1 Infineon-KP464E-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188bf6d9a0611db
KP464EXTMA1
Виробник: Infineon Technologies
Description: XENSIV - KP464E HIGHLY SENSITIVE
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.145PSI (±1kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
на замовлення 3099 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+209.99 грн
5+180.16 грн
10+172.00 грн
25+152.36 грн
50+146.16 грн
100+140.48 грн
500+126.95 грн
1000+122.77 грн
Мінімальне замовлення: 2
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KP466PXTMA1 Infineon-KP466-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188bf7fe19111df
KP466PXTMA1
Виробник: Infineon Technologies
Description: XENSIV - KP466 HIGHLY SENSITIVE
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Pressure Type: Absolute
Accuracy: ±0.145PSI (±1kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
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KP466PXTMA1 Infineon-KP466-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188bf7fe19111df
KP466PXTMA1
Виробник: Infineon Technologies
Description: XENSIV - KP466 HIGHLY SENSITIVE
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Pressure Type: Absolute
Accuracy: ±0.145PSI (±1kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
на замовлення 2794 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+209.99 грн
5+180.16 грн
10+172.00 грн
25+152.36 грн
50+146.16 грн
100+140.48 грн
500+126.95 грн
1000+122.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CYT4DNJBRCQ1BZSGS
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6.188MB FLSH 327BGA
Packaging: Tray
Package / Case: 327-BGA
Mounting Type: Surface Mount
Speed: 320MHz
Program Memory Size: 6.188MB (6.188M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, LINbus, SPI
Peripherals: DMA, I²S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-BGA
Number of I/O: 168
DigiKey Programmable: Not Verified
на замовлення 890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8571.56 грн
10+7828.16 грн
25+7615.12 грн
90+6646.75 грн
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IR2153PBF description IR2153_D_S_PbF_5-21-20.pdf
IR2153PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
на замовлення 1284 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+150.23 грн
10+106.86 грн
50+91.74 грн
100+81.69 грн
250+77.04 грн
500+74.24 грн
1000+70.75 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TDA48632GXUMA2 tda4863-2_v2-1.pdf?folderId=db3a304412b407950112b418029a24aa&fileId=db3a304412b407950112b41802de24ab
TDA48632GXUMA2
Виробник: Infineon Technologies
Description: IC PFC CTRLR DCM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8-3
Current - Startup: 20 µA
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TDA48632GXUMA2 tda4863-2_v2-1.pdf?folderId=db3a304412b407950112b418029a24aa&fileId=db3a304412b407950112b41802de24ab
TDA48632GXUMA2
Виробник: Infineon Technologies
Description: IC PFC CTRLR DCM 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8-3
Current - Startup: 20 µA
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IRFR18N15DTRLP irfr18n15dpbf.pdf?fileId=5546d462533600a40153562d7a002069
IRFR18N15DTRLP
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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IRFR18N15DTRPBF irfr18n15dpbf.pdf?fileId=5546d462533600a40153562d7a002069
IRFR18N15DTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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IRFR18N15DTRPBF irfr18n15dpbf.pdf?fileId=5546d462533600a40153562d7a002069
IRFR18N15DTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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IRFI3205PBF description irfi3205pbf.pdf?fileId=5546d462533600a401535623c5e91f6b
IRFI3205PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 64A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 34A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
на замовлення 3611 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+246.51 грн
50+119.62 грн
100+108.21 грн
500+82.77 грн
1000+76.74 грн
2000+74.49 грн
Мінімальне замовлення: 2
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S25HL01GTDPMHM010 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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AUIRFR4105Z AUIRF%28R%2CU%294105Z.pdf
AUIRFR4105Z
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 20A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IRLZ24NSPBF description irlz24nspbf.pdf
IRLZ24NSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
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S29GL064S70TFI043
Виробник: Infineon Technologies
Description: PNOR
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
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24VSHIELDBTT6030TOBO1 Infineon-24V%20protected%20switch%20shield_PB.pdf-PB-v01_00-EN.pdf?fileId=5546d46255dd933d015601e282682ac5
24VSHIELDBTT6030TOBO1
Виробник: Infineon Technologies
Description: EVAL 24V PROTECT SWITCH SHIELD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTT6020-1ERA, BTT6030-2ERA
Platform: Arduino
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3698.54 грн
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CY8C4245LTI-M445 download
CY8C4245LTI-M445
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+434.93 грн
10+319.63 грн
25+294.96 грн
80+254.82 грн
260+238.79 грн
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IPB60R280CFD7ATMA1 Infineon-IPB60R280CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0d76e1ac5
IPB60R280CFD7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+219.95 грн
10+136.76 грн
100+94.25 грн
500+71.40 грн
Мінімальне замовлення: 2
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IPD60R280P7SE8228AUMA1 infineon-ipd60r280p7-datasheet-en.pdf
IPD60R280P7SE8228AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
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IPS60R280PFD7SAKMA1 Infineon-IPS60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed5dc2db339cc
IPS60R280PFD7SAKMA1
Виробник: Infineon Technologies
Description: CONSUMER PG-TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
381+60.48 грн
Мінімальне замовлення: 381
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IPA60R280P7SE8228XKSA1
IPA60R280P7SE8228XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 699750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
419+51.35 грн
Мінімальне замовлення: 419
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IPA60R280P7SE8228XKSA1
IPA60R280P7SE8228XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
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IPA60R280C6XKSA1 IPA60R280C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e01239ddb46a66f73
IPA60R280C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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IPP60R280E6XKSA1 IPP60R280E6_2.0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281fa6ed7144f7
IPP60R280E6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 2027 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
214+107.18 грн
Мінімальне замовлення: 214
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IPD380P06NMATMA1 Infineon-IPD380P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2ea8300b7
IPD380P06NMATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 35A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+49.62 грн
Мінімальне замовлення: 2500
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IR21091STRPBF ir21091.pdf?fileId=5546d462533600a4015355c7f66f167c
IR21091STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR21091STRPBF ir21091.pdf?fileId=5546d462533600a4015355c7f66f167c
IR21091STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR21091SPBF ir21091.pdf?fileId=5546d462533600a4015355c7f66f167c
IR21091SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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EVAL6ED2231S12TM1TOBO1 EVAL-6ED2231S12TM1_V1.0_UG_6-2-22.pdf
EVAL6ED2231S12TM1TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD
Packaging: Bulk
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+60472.37 грн
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IRF1010ZSPBF description irf1010z.pdf
IRF1010ZSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
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AUIRF1010ZS auirf1010z.pdf?fileId=5546d462533600a4015355a89a4a1364
AUIRF1010ZS
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPD50N03S207ATMA1 IPD50N03S2-07_green.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270d5a3b72
IPD50N03S207ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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TLF11251LDXUMA1 Infineon-TLF11251LD-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a0177241a02695830
TLF11251LDXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10TDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSON-10-2
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+90.96 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TLF11251LDXUMA1 Infineon-TLF11251LD-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a0177241a02695830
TLF11251LDXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10TDFN
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSON-10-2
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 11652 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+193.39 грн
10+138.19 грн
25+126.29 грн
100+106.17 грн
250+100.28 грн
500+96.73 грн
1000+92.27 грн
2500+89.24 грн
Мінімальне замовлення: 2
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IRLZ44ZSPBF irlz44zpbf.pdf?fileId=5546d462533600a4015356722836272a
IRLZ44ZSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
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AUIRLZ44Z auirlz44z.pdf?fileId=5546d462533600a4015355befab71595
AUIRLZ44Z
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IRMCK343TR irmck343.pdf?fileId=5546d462533600a401535672d6df2760
IRMCK343TR
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 64MQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: IGBT
Supplier Device Package: 64-MQFP (10x10)
Motor Type - AC, DC: AC, Synchronous
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IRMCK343TY irmck343.pdf?fileId=5546d462533600a401535672d6df2760
IRMCK343TY
Виробник: Infineon Technologies
Description: IC MTRDRV 1.62-1.98/3-3.6V 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I²C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: IGBT
Supplier Device Package: 64-QFP
Motor Type - AC, DC: AC, Synchronous
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MB15E03SLPFV1-G-ER-6E1 download
MB15E03SLPFV1-G-ER-6E1
Виробник: Infineon Technologies
Description: IC FREQ SYNTH 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 1.2GHz
Type: Frequency Synthesizer
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 16-SSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY2308SXI-2 Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308SXI-2
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CYV15G0204TRB-BGC CYV15G0204TRB.pdf
CYV15G0204TRB-BGC
Виробник: Infineon Technologies
Description: IC SERDES HOTLINK 256LBGA
Packaging: Tray
Package / Case: 256-BGA Exposed Pad
Output Type: PECL
Mounting Type: Surface Mount
Number of Outputs: 4/20
Function: Serializer/Deserializer
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.3V
Data Rate: 1.485Gbps
Input Type: LVTTL
Number of Inputs: 20/4
Supplier Device Package: 256-L2BGA (27x27)
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+2629.57 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IRGP30B60KD-EP irgp30b60kd-epbf.pdf?fileId=5546d462533600a401535655b5382442
IRGP30B60KD-EP
Виробник: Infineon Technologies
Description: IGBT NPT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 125 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/185ns
Switching Energy: 350µJ (on), 825µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 304 W
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FM28V102A-TGTR Infineon-FM28V102A_1-Mbit_(64_K_16)_F-RAM_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8c591413e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V102A-TGTR
Виробник: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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FM28V202A-TGTR Infineon-FM28V202A_2-Mbit_(128_K_16)_F-RAM_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8b6684132&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V202A-TGTR
Виробник: Infineon Technologies
Description: IC FRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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CY9BF114NBGL-G-F4K9E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 112FBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1445.89 грн
10+1279.80 грн
25+1226.72 грн
198+1014.32 грн
396+964.54 грн
594+902.31 грн
В кошику  од. на суму  грн.
CY9BF106RAPMC-G-UNE2 download
CY9BF106RAPMC-G-UNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1114.71 грн
10+853.38 грн
25+798.35 грн
84+734.02 грн
В кошику  од. на суму  грн.
CY9BF116RPMC-G-F4FKE1 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421
CY9BF116RPMC-G-F4FKE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 103
DigiKey Programmable: Not Verified
на замовлення 837 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+554.45 грн
10+482.28 грн
25+459.87 грн
84+374.73 грн
252+357.89 грн
504+326.31 грн
В кошику  од. на суму  грн.
CY9BF112NPQC-G-JNE2 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF112NPQC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (20x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF112RPMC-G-JNE2 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF112RPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 103
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
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