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IGP20N65F5XKSA1 IGP20N65F5XKSA1 Infineon Technologies Infineon-IGP20N65F5-DS-v02_01-en.pdf?fileId=5546d461464245d30146a4778c5e6c46 Description: IGBT TRENCH 650V 42A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/165ns
Switching Energy: 160µJ (on), 60µJ (off)
Test Condition: 400V, 10A, 32Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
на замовлення 497 шт:
термін постачання 21-31 дні (днів)
2+198.47 грн
50+94.37 грн
100+84.93 грн
Мінімальне замовлення: 2
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IRG7PH35UD1PBF IRG7PH35UD1PBF Infineon Technologies IRG7PH35UD1PBF%28-EP%29.pdf Description: IGBT TRENCH 1200V 50A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
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AUIRF7749L2TR AUIRF7749L2TR Infineon Technologies auirf7749l2.pdf?fileId=5546d462533600a4015355b0aec5140a Description: MOSFET N-CH 60V 36A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 345A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10655 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRF7749L2TR AUIRF7749L2TR Infineon Technologies auirf7749l2.pdf?fileId=5546d462533600a4015355b0aec5140a Description: MOSFET N-CH 60V 36A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 345A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10655 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5318 шт:
термін постачання 21-31 дні (днів)
1+505.71 грн
10+369.71 грн
100+281.23 грн
500+251.57 грн
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BTF60702ERVXUMA1 BTF60702ERVXUMA1 Infineon Technologies Infineon-%20Infineon-BTF6070-2ERV-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d5e7e6e8c0667 Description: IC SWTCH HISIDE SMRT
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 5 ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-21
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
на замовлення 8158 шт:
термін постачання 21-31 дні (днів)
2+260.40 грн
10+189.29 грн
25+173.88 грн
100+147.25 грн
250+139.66 грн
500+135.08 грн
1000+129.16 грн
Мінімальне замовлення: 2
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CY8C20496A-24LQXI CY8C20496A-24LQXI Infineon Technologies Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp Description: MCU 16K FLASH 2K SRAM 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 441 шт:
термін постачання 21-31 дні (днів)
1+492.21 грн
10+364.51 грн
25+337.14 грн
80+291.96 грн
230+275.73 грн
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S25FL256LAGBHV023 S25FL256LAGBHV023 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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AUIRF2903ZSTRL AUIRF2903ZSTRL Infineon Technologies auirf2903zs.pdf?fileId=5546d462533600a4015355ac334a1394 Description: MOSFET N-CH 30V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V
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AUIRF2903ZS AUIRF2903ZS Infineon Technologies auirf2903zs.pdf?fileId=5546d462533600a4015355ac334a1394 Description: MOSFET N-CH 30V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V
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BCR146E6327HTSA1 BCR146E6327HTSA1 Infineon Technologies bcr146series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440120c6802b7 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
на замовлення 178367 шт:
термін постачання 21-31 дні (днів)
9746+2.27 грн
Мінімальне замовлення: 9746
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BCR142B6327HTLA1 BCR142B6327HTLA1 Infineon Technologies bcr142series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114400b292302b6 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 148 B6327 BCR 148 B6327 Infineon Technologies bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 148F B6327 BCR 148F B6327 Infineon Technologies bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8 Description: TRANS PREBIAS NPN 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 149F E6327 BCR 149F E6327 Infineon Technologies BCR149.pdf Description: TRANS PREBIAS NPN 250MW TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
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BCR 149L3 E6327 BCR 149L3 E6327 Infineon Technologies BCR149.pdf Description: TRANS PREBIAS NPN 250MW TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
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IRFU1205PBF IRFU1205PBF Infineon Technologies IRFR_U1205PbF.pdf Description: MOSFET N-CH 55V 44A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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BCR169WH6327XTSA1 BCR169WH6327XTSA1 Infineon Technologies bcr169series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440313bb302d1 Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
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ISZ56DP15LMATMA1 ISZ56DP15LMATMA1 Infineon Technologies Infineon-ISZ56DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa000ffe36fc Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta), 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V
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ISZ56DP15LMATMA1 ISZ56DP15LMATMA1 Infineon Technologies Infineon-ISZ56DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa000ffe36fc Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta), 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V
на замовлення 477 шт:
термін постачання 21-31 дні (днів)
4+92.09 грн
10+62.46 грн
100+48.69 грн
Мінімальне замовлення: 4
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AUIR3313 AUIR3313 Infineon Technologies auir3313.pdf?fileId=5546d462533600a4015355a83e2d1347 Description: IC PWR DRIVER N-CHAN 1:1 TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220-5
Fault Protection: Current Limiting (Adjustable), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIR3314 AUIR3314 Infineon Technologies auir3314.pdf?fileId=5546d462533600a4015355a846b8134a Description: IC PWR DRIVER N-CHAN 1:1 TO220
Packaging: Tube
Package / Case: TO-220-5
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 18A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Adjustable), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIR3315 AUIR3315 Infineon Technologies auir3315.pdf?fileId=5546d462533600a4015355a84eda134d Description: IC PWR DRIVER N-CHAN 1:1 TO220
Packaging: Tube
Package / Case: TO-220-5
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Adjustable), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIR3316S AUIR3316S Infineon Technologies auir3316.pdf?fileId=5546d462533600a4015355a856f41350 Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIR3316STRL AUIR3316STRL Infineon Technologies auir3316.pdf?fileId=5546d462533600a4015355a856f41350 Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIR3317STRL AUIR3317STRL Infineon Technologies AUIR3317%28S%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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IRLR2908PBF IRLR2908PBF Infineon Technologies irlr2908pbf.pdf?fileId=5546d462533600a40153566cdace2681 description Description: MOSFET N-CH 80V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
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IRLR2908TRLPBF IRLR2908TRLPBF Infineon Technologies IRLR2908PbF%2CIRLU2908PbF.pdf Description: MOSFET N-CH 80V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
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IRLR2908TRLPBF IRLR2908TRLPBF Infineon Technologies IRLR2908PbF%2CIRLU2908PbF.pdf Description: MOSFET N-CH 80V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
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IRFZ44NPBF IRFZ44NPBF Infineon Technologies irfz44npbf.pdf?fileId=5546d462533600a40153563b3a9f220d Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
на замовлення 33120 шт:
термін постачання 21-31 дні (днів)
4+98.44 грн
50+46.91 грн
100+44.65 грн
500+34.18 грн
1000+30.17 грн
2000+28.38 грн
5000+26.28 грн
10000+20.86 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY8C4247LWS-M464T CY8C4247LWS-M464T Infineon Technologies Description: IC MCU 32BIT 128KB FLASH 56VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Number of I/O: 46
Grade: Automotive
Qualification: AEC-Q100
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CY8C4247LWS-M464 CY8C4247LWS-M464 Infineon Technologies download.pdf Description: IC MCU 32BIT 128KB FLASH 56VFQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Number of I/O: 46
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
1+746.26 грн
10+560.68 грн
25+521.04 грн
80+453.72 грн
260+427.99 грн
520+416.40 грн
1040+400.18 грн
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S6J332CKSESE20000 Infineon Technologies Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 150
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S6J331EKSESE20000 Infineon Technologies Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 150
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S6J332CJTDSE20000 S6J332CJTDSE20000 Infineon Technologies Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 150
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CY8C4125AXI-M445T CY8C4125AXI-M445T Infineon Technologies Infineon-PSoC_4_PSoC_4100M_Family-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd541f479e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+252.89 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
CY8C4125AXI-M445T CY8C4125AXI-M445T Infineon Technologies Infineon-PSoC_4_PSoC_4100M_Family-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd541f479e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+445.37 грн
10+387.83 грн
25+369.80 грн
100+301.33 грн
250+287.78 грн
500+262.39 грн
В кошику  од. на суму  грн.
CY8C4125AZI-M445 CY8C4125AZI-M445 Infineon Technologies Infineon-PSoC_4_PSoC_4100M_Family-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd541f479e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+339.79 грн
10+248.61 грн
25+228.83 грн
160+189.13 грн
320+182.50 грн
480+179.18 грн
960+171.45 грн
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CY7C63743-SC CY7C63743-SC Infineon Technologies CY7C63722%2C23%2C43.pdf Description: IC MCU 8K LS USB/PS-2 24-SOIC
Packaging: Tube
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 24-SOIC
Number of I/O: 16
DigiKey Programmable: Not Verified
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CY7C63743-PXC CY7C63743-PXC Infineon Technologies CY7C63722%2C23%2C43.pdf Description: IC MCU 8K USB/PS2 LS 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 24-PDIP
Number of I/O: 16
DigiKey Programmable: Not Verified
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CY7C63743-SXC CY7C63743-SXC Infineon Technologies CY7C63722%2C23%2C43.pdf Description: IC MCU 8K USB/PS2 LS 24SOIC
Packaging: Tube
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 24-SOIC
Number of I/O: 16
DigiKey Programmable: Not Verified
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CY7C63743C-PXC CY7C63743C-PXC Infineon Technologies CY7C63722C,23C,43C.pdf Description: IC MCU 8K LS USB/PS-2 24-DIP
Packaging: Tube
Package / Case: 24-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.5V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 24-PDIP
Number of I/O: 16
DigiKey Programmable: Not Verified
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IRS2153DSPBF IRS2153DSPBF Infineon Technologies IRSDS08244-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
на замовлення 2978 шт:
термін постачання 21-31 дні (днів)
2+175.45 грн
10+125.22 грн
95+102.91 грн
190+92.38 грн
285+90.27 грн
570+87.18 грн
1045+83.54 грн
2565+80.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRLZ44ZPBF IRLZ44ZPBF Infineon Technologies irlz44zpbf.pdf?fileId=5546d462533600a4015356722836272a Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
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IRS2302STRPBF IRS2302STRPBF Infineon Technologies Infineon-IRS2302S-DS-v02_01-EN.pdf?fileId=5546d46269e1c019016a4e4998500c47 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IRS2302STRPBF IRS2302STRPBF Infineon Technologies Infineon-IRS2302S-DS-v02_01-EN.pdf?fileId=5546d46269e1c019016a4e4998500c47 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 774 шт:
термін постачання 21-31 дні (днів)
5+78.60 грн
10+54.28 грн
25+49.05 грн
100+40.61 грн
250+38.02 грн
500+36.46 грн
Мінімальне замовлення: 5
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IRFZ44VZSPBF IRFZ44VZSPBF Infineon Technologies irfz44vzpbf.pdf?fileId=5546d462533600a40153563b60f62219 Description: MOSFET N-CH 60V 57A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
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IR2109STRPBF IR2109STRPBF Infineon Technologies ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR2109STRPBF IR2109STRPBF Infineon Technologies ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 721 шт:
термін постачання 21-31 дні (днів)
4+100.82 грн
10+71.10 грн
25+64.43 грн
100+53.60 грн
250+50.33 грн
500+48.36 грн
Мінімальне замовлення: 4
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BTS500051LUAAUMA1 BTS500051LUAAUMA1 Infineon Technologies Infineon-BTS50005-1LUA-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c85ecb3470186018c2d330997 Description: MULTICHIP PROFET & GD
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 0.6mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 28V
Current - Output (Max): 65A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-5
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTS500051LUAAUMA1 BTS500051LUAAUMA1 Infineon Technologies Infineon-BTS50005-1LUA-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c85ecb3470186018c2d330997 Description: MULTICHIP PROFET & GD
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 0.6mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 28V
Current - Output (Max): 65A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-5
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1725 шт:
термін постачання 21-31 дні (днів)
1+435.85 грн
10+321.85 грн
25+297.54 грн
100+254.11 грн
250+242.14 грн
500+234.92 грн
1000+225.23 грн
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AUIRF2804LRL306 Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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S6E1C32B0AGU1H000 S6E1C32B0AGU1H000 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: IC MCU 32BIT 128KB FLASH 30WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 30-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 30-WLCSP (2.69x2.31)
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+158.36 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
S6E1C32B0AGU1H000 S6E1C32B0AGU1H000 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: IC MCU 32BIT 128KB FLASH 30WLCSP
Packaging: Cut Tape (CT)
Package / Case: 30-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 30-WLCSP (2.69x2.31)
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+315.18 грн
10+229.65 грн
25+211.37 грн
100+179.42 грн
250+170.40 грн
500+164.96 грн
1000+157.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE9891QTA61XUMA1 TLE9891QTA61XUMA1 Infineon Technologies Infineon-TLE988x_9x_DataSheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8823155701882e60aa3a4f50 Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE989x
Program Memory Type: EEPROM (8kB), FLASH (144kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Number of I/O: 8
Qualification: AEC-Q100
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TLE9891QTA61XUMA1 TLE9891QTA61XUMA1 Infineon Technologies Infineon-TLE988x_9x_DataSheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8823155701882e60aa3a4f50 Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE989x
Program Memory Type: EEPROM (8kB), FLASH (144kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Number of I/O: 8
Qualification: AEC-Q100
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
1+514.44 грн
10+382.47 грн
25+354.20 грн
100+303.31 грн
250+289.44 грн
500+281.08 грн
1000+269.70 грн
В кошику  од. на суму  грн.
TLE98812QTW60XUMA1 TLE98812QTW60XUMA1 Infineon Technologies Infineon-TLE988x_9x_DataSheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8823155701882e60aa3a4f50 Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE988x
Program Memory Type: EEPROM (8kB), FLASH (144kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Number of I/O: 8
Qualification: AEC-Q100
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TLE98812QTW60XUMA1 TLE98812QTW60XUMA1 Infineon Technologies Infineon-TLE988x_9x_DataSheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8823155701882e60aa3a4f50 Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE988x
Program Memory Type: EEPROM (8kB), FLASH (144kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-TQFP-48-10
Number of I/O: 8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2213 шт:
термін постачання 21-31 дні (днів)
1+526.35 грн
10+391.57 грн
25+362.83 грн
100+310.81 грн
250+296.65 грн
500+288.12 грн
1000+276.49 грн
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F3L11MR12W2M1HPB19BPSA1 F3L11MR12W2M1HPB19BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
1+14606.03 грн
18+13173.45 грн
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IGI60F2727A1LAUMA1 IGI60F2727A1LAUMA1 Infineon Technologies Infineon-IGI60F2727A1L-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c85ecb3470186795a525778ba Description: IC HALF BRIDGE DRVR 4.5A 28TIQFN
Packaging: Cut Tape (CT)
Package / Case: 28-PowerTQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 3.5V
Rds On (Typ): 1.2Ohm LS, 1.3Ohm HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 4.5A
Current - Peak Output: 12.2A
Technology: NMOS, PMOS
Voltage - Load: 5.5V ~ 12V
Supplier Device Package: PG-TIQFN-28-1
Load Type: Inductive, Capacitive, Resistive
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CY62138FLL-45SXIT CY62138FLL-45SXIT Infineon Technologies Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 2MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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IGP20N65F5XKSA1 Infineon-IGP20N65F5-DS-v02_01-en.pdf?fileId=5546d461464245d30146a4778c5e6c46
IGP20N65F5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 42A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/165ns
Switching Energy: 160µJ (on), 60µJ (off)
Test Condition: 400V, 10A, 32Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 125 W
на замовлення 497 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+198.47 грн
50+94.37 грн
100+84.93 грн
Мінімальне замовлення: 2
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IRG7PH35UD1PBF IRG7PH35UD1PBF%28-EP%29.pdf
IRG7PH35UD1PBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
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AUIRF7749L2TR auirf7749l2.pdf?fileId=5546d462533600a4015355b0aec5140a
AUIRF7749L2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 36A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 345A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10655 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRF7749L2TR auirf7749l2.pdf?fileId=5546d462533600a4015355b0aec5140a
AUIRF7749L2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 36A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 345A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10655 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5318 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+505.71 грн
10+369.71 грн
100+281.23 грн
500+251.57 грн
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BTF60702ERVXUMA1 Infineon-%20Infineon-BTF6070-2ERV-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d5e7e6e8c0667
BTF60702ERVXUMA1
Виробник: Infineon Technologies
Description: IC SWTCH HISIDE SMRT
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 5 ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-21
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
на замовлення 8158 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+260.40 грн
10+189.29 грн
25+173.88 грн
100+147.25 грн
250+139.66 грн
500+135.08 грн
1000+129.16 грн
Мінімальне замовлення: 2
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CY8C20496A-24LQXI Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20496A-24LQXI
Виробник: Infineon Technologies
Description: MCU 16K FLASH 2K SRAM 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 441 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+492.21 грн
10+364.51 грн
25+337.14 грн
80+291.96 грн
230+275.73 грн
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S25FL256LAGBHV023 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL256LAGBHV023
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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AUIRF2903ZSTRL auirf2903zs.pdf?fileId=5546d462533600a4015355ac334a1394
AUIRF2903ZSTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V
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AUIRF2903ZS auirf2903zs.pdf?fileId=5546d462533600a4015355ac334a1394
AUIRF2903ZS
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V
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BCR146E6327HTSA1 bcr146series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440120c6802b7
BCR146E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
на замовлення 178367 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9746+2.27 грн
Мінімальне замовлення: 9746
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BCR142B6327HTLA1 bcr142series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114400b292302b6
BCR142B6327HTLA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 148 B6327 bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8
BCR 148 B6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 148F B6327 bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8
BCR 148F B6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 149F E6327 BCR149.pdf
BCR 149F E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
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BCR 149L3 E6327 BCR149.pdf
BCR 149L3 E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
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IRFU1205PBF IRFR_U1205PbF.pdf
IRFU1205PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 44A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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BCR169WH6327XTSA1 bcr169series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440313bb302d1
BCR169WH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
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ISZ56DP15LMATMA1 Infineon-ISZ56DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa000ffe36fc
ISZ56DP15LMATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta), 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V
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ISZ56DP15LMATMA1 Infineon-ISZ56DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa000ffe36fc
ISZ56DP15LMATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta), 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 75 V
на замовлення 477 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+92.09 грн
10+62.46 грн
100+48.69 грн
Мінімальне замовлення: 4
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AUIR3313 auir3313.pdf?fileId=5546d462533600a4015355a83e2d1347
AUIR3313
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:1 TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220-5
Fault Protection: Current Limiting (Adjustable), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIR3314 auir3314.pdf?fileId=5546d462533600a4015355a846b8134a
AUIR3314
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:1 TO220
Packaging: Tube
Package / Case: TO-220-5
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 18A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Adjustable), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIR3315 auir3315.pdf?fileId=5546d462533600a4015355a84eda134d
AUIR3315
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:1 TO220
Packaging: Tube
Package / Case: TO-220-5
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 14A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Adjustable), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIR3316S auir3316.pdf?fileId=5546d462533600a4015355a856f41350
AUIR3316S
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIR3316STRL auir3316.pdf?fileId=5546d462533600a4015355a856f41350
AUIR3316STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIR3317STRL AUIR3317%28S%29.pdf
AUIR3317STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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IRLR2908PBF description irlr2908pbf.pdf?fileId=5546d462533600a40153566cdace2681
IRLR2908PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
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IRLR2908TRLPBF IRLR2908PbF%2CIRLU2908PbF.pdf
IRLR2908TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
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IRLR2908TRLPBF IRLR2908PbF%2CIRLU2908PbF.pdf
IRLR2908TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
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IRFZ44NPBF irfz44npbf.pdf?fileId=5546d462533600a40153563b3a9f220d
IRFZ44NPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
на замовлення 33120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+98.44 грн
50+46.91 грн
100+44.65 грн
500+34.18 грн
1000+30.17 грн
2000+28.38 грн
5000+26.28 грн
10000+20.86 грн
Мінімальне замовлення: 4
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CY8C4247LWS-M464T
CY8C4247LWS-M464T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 56VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Number of I/O: 46
Grade: Automotive
Qualification: AEC-Q100
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CY8C4247LWS-M464 download.pdf
CY8C4247LWS-M464
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 56VFQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 56-QFN-EP (8x8)
Number of I/O: 46
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+746.26 грн
10+560.68 грн
25+521.04 грн
80+453.72 грн
260+427.99 грн
520+416.40 грн
1040+400.18 грн
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S6J332CKSESE20000 Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e
Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 150
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S6J331EKSESE20000 Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e
Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 150
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S6J332CJTDSE20000
S6J332CJTDSE20000
Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 150
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CY8C4125AXI-M445T Infineon-PSoC_4_PSoC_4100M_Family-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd541f479e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125AXI-M445T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+252.89 грн
Мінімальне замовлення: 1500
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CY8C4125AXI-M445T Infineon-PSoC_4_PSoC_4100M_Family-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd541f479e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125AXI-M445T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+445.37 грн
10+387.83 грн
25+369.80 грн
100+301.33 грн
250+287.78 грн
500+262.39 грн
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CY8C4125AZI-M445 Infineon-PSoC_4_PSoC_4100M_Family-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd541f479e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125AZI-M445
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+339.79 грн
10+248.61 грн
25+228.83 грн
160+189.13 грн
320+182.50 грн
480+179.18 грн
960+171.45 грн
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CY7C63743-SC CY7C63722%2C23%2C43.pdf
CY7C63743-SC
Виробник: Infineon Technologies
Description: IC MCU 8K LS USB/PS-2 24-SOIC
Packaging: Tube
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 24-SOIC
Number of I/O: 16
DigiKey Programmable: Not Verified
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CY7C63743-PXC CY7C63722%2C23%2C43.pdf
CY7C63743-PXC
Виробник: Infineon Technologies
Description: IC MCU 8K USB/PS2 LS 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 24-PDIP
Number of I/O: 16
DigiKey Programmable: Not Verified
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CY7C63743-SXC CY7C63722%2C23%2C43.pdf
CY7C63743-SXC
Виробник: Infineon Technologies
Description: IC MCU 8K USB/PS2 LS 24SOIC
Packaging: Tube
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 24-SOIC
Number of I/O: 16
DigiKey Programmable: Not Verified
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CY7C63743C-PXC CY7C63722C,23C,43C.pdf
CY7C63743C-PXC
Виробник: Infineon Technologies
Description: IC MCU 8K LS USB/PS-2 24-DIP
Packaging: Tube
Package / Case: 24-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.5V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 24-PDIP
Number of I/O: 16
DigiKey Programmable: Not Verified
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IRS2153DSPBF description IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS2153DSPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
на замовлення 2978 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+175.45 грн
10+125.22 грн
95+102.91 грн
190+92.38 грн
285+90.27 грн
570+87.18 грн
1045+83.54 грн
2565+80.88 грн
Мінімальне замовлення: 2
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IRLZ44ZPBF irlz44zpbf.pdf?fileId=5546d462533600a4015356722836272a
IRLZ44ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
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IRS2302STRPBF Infineon-IRS2302S-DS-v02_01-EN.pdf?fileId=5546d46269e1c019016a4e4998500c47
IRS2302STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IRS2302STRPBF Infineon-IRS2302S-DS-v02_01-EN.pdf?fileId=5546d46269e1c019016a4e4998500c47
IRS2302STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 774 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+78.60 грн
10+54.28 грн
25+49.05 грн
100+40.61 грн
250+38.02 грн
500+36.46 грн
Мінімальне замовлення: 5
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IRFZ44VZSPBF irfz44vzpbf.pdf?fileId=5546d462533600a40153563b60f62219
IRFZ44VZSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 57A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
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IR2109STRPBF ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679
IR2109STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR2109STRPBF ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679
IR2109STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 721 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.82 грн
10+71.10 грн
25+64.43 грн
100+53.60 грн
250+50.33 грн
500+48.36 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTS500051LUAAUMA1 Infineon-BTS50005-1LUA-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c85ecb3470186018c2d330997
BTS500051LUAAUMA1
Виробник: Infineon Technologies
Description: MULTICHIP PROFET & GD
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 0.6mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 28V
Current - Output (Max): 65A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-5
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTS500051LUAAUMA1 Infineon-BTS50005-1LUA-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c85ecb3470186018c2d330997
BTS500051LUAAUMA1
Виробник: Infineon Technologies
Description: MULTICHIP PROFET & GD
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 0.6mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 28V
Current - Output (Max): 65A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-5
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1725 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+435.85 грн
10+321.85 грн
25+297.54 грн
100+254.11 грн
250+242.14 грн
500+234.92 грн
1000+225.23 грн
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AUIRF2804LRL306
Виробник: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
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S6E1C32B0AGU1H000 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
S6E1C32B0AGU1H000
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 30WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 30-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 30-WLCSP (2.69x2.31)
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+158.36 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
S6E1C32B0AGU1H000 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
S6E1C32B0AGU1H000
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 30WLCSP
Packaging: Cut Tape (CT)
Package / Case: 30-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 30-WLCSP (2.69x2.31)
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+315.18 грн
10+229.65 грн
25+211.37 грн
100+179.42 грн
250+170.40 грн
500+164.96 грн
1000+157.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE9891QTA61XUMA1 Infineon-TLE988x_9x_DataSheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8823155701882e60aa3a4f50
TLE9891QTA61XUMA1
Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE989x
Program Memory Type: EEPROM (8kB), FLASH (144kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Number of I/O: 8
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE9891QTA61XUMA1 Infineon-TLE988x_9x_DataSheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8823155701882e60aa3a4f50
TLE9891QTA61XUMA1
Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE989x
Program Memory Type: EEPROM (8kB), FLASH (144kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Number of I/O: 8
Qualification: AEC-Q100
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+514.44 грн
10+382.47 грн
25+354.20 грн
100+303.31 грн
250+289.44 грн
500+281.08 грн
1000+269.70 грн
В кошику  од. на суму  грн.
TLE98812QTW60XUMA1 Infineon-TLE988x_9x_DataSheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8823155701882e60aa3a4f50
TLE98812QTW60XUMA1
Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE988x
Program Memory Type: EEPROM (8kB), FLASH (144kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Number of I/O: 8
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE98812QTW60XUMA1 Infineon-TLE988x_9x_DataSheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8823155701882e60aa3a4f50
TLE98812QTW60XUMA1
Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE988x
Program Memory Type: EEPROM (8kB), FLASH (144kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-TQFP-48-10
Number of I/O: 8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2213 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+526.35 грн
10+391.57 грн
25+362.83 грн
100+310.81 грн
250+296.65 грн
500+288.12 грн
1000+276.49 грн
В кошику  од. на суму  грн.
F3L11MR12W2M1HPB19BPSA1
F3L11MR12W2M1HPB19BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+14606.03 грн
18+13173.45 грн
В кошику  од. на суму  грн.
IGI60F2727A1LAUMA1 Infineon-IGI60F2727A1L-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c85ecb3470186795a525778ba
IGI60F2727A1LAUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 4.5A 28TIQFN
Packaging: Cut Tape (CT)
Package / Case: 28-PowerTQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 3.5V
Rds On (Typ): 1.2Ohm LS, 1.3Ohm HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 4.5A
Current - Peak Output: 12.2A
Technology: NMOS, PMOS
Voltage - Load: 5.5V ~ 12V
Supplier Device Package: PG-TIQFN-28-1
Load Type: Inductive, Capacitive, Resistive
товару немає в наявності
В кошику  од. на суму  грн.
CY62138FLL-45SXIT Infineon-CY62138F_MOBL_2_MBIT_(256K_X_8)_STATIC_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe9f27325d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62138FLL-45SXIT
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
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