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C161PILF3VCABXUMA1 C161PILF3VCABXUMA1 Infineon Technologies 2156_c161pi_ds_199907.pdf_folderid%3Ddb3a304412b407950112b4391ae36c3b%26fileid%3Ddb3a304412b407950112b4391b6f6c3c.pdf Description: SAB-C161PI - LEGACY 16-BIT MICRO
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 3K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Number of I/O: 76
DigiKey Programmable: Not Verified
на замовлення 1228 шт:
термін постачання 21-31 дні (днів)
16+1394.41 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
S29GL512S10DHI010 S29GL512S10DHI010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
на замовлення 5047 шт:
термін постачання 21-31 дні (днів)
1+660.57 грн
10+564.91 грн
25+538.68 грн
40+493.34 грн
80+475.89 грн
260+471.09 грн
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IRFR120ZPBF IRFR120ZPBF Infineon Technologies irfr120zpbf.pdf?fileId=5546d462533600a40153562d2f422050 Description: MOSFET N-CH 100V 8.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
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MC68HC705C8ACPB Infineon Technologies Description: MC68HC8-BMICROCONTROLLER
Packaging: Bulk
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IRL3715ZPBF IRL3715ZPBF Infineon Technologies IRL3715Z(S,L)PbF.pdf Description: MOSFET N-CH 20V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
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TLE493DW2B6MS2GOTOBO1 TLE493DW2B6MS2GOTOBO1 Infineon Technologies InfineonInfineon3DMS2GOTLE493DW2B6UMv0100E.pdf Description: 3D MAGNETIC SENSOR 2GO
Packaging: Bulk
Interface: I2C, Serial
Contents: Board(s)
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLE493D-W2B6
Supplied Contents: Board(s)
Sensing Range: ±160mT ~ ±230mT
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
1+2179.37 грн
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IR2113PBF IR2113PBF Infineon Technologies IR2113SPBF.pdf description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
на замовлення 4162 шт:
термін постачання 21-31 дні (днів)
2+255.84 грн
10+185.06 грн
25+169.90 грн
100+143.75 грн
250+136.26 грн
500+131.76 грн
1000+125.95 грн
2500+122.09 грн
Мінімальне замовлення: 2
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IRF7314PBF IRF7314PBF Infineon Technologies irf7314pbf.pdf?fileId=5546d462533600a4015355f57b901b2c description Description: MOSFET 2P-CH 20V 5.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
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CY8C20110-LDX2I CY8C20110-LDX2I Infineon Technologies download Description: IC CAPSENSE EXP 10 I/O 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I²C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Current - Supply: 1.5mA
Number of Inputs: Up to 10
Supplier Device Package: 16-QFN (3x3)
Proximity Detection: No
LED Driver Channels: Up to 10
DigiKey Programmable: Not Verified
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IPP023N10N5XKSA1 IPP023N10N5XKSA1 Infineon Technologies Infineon-IPP023N10N5-DS-v02_03-EN.pdf?fileId=5546d461454603990145d5a675f86494 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
1+379.06 грн
50+190.90 грн
100+174.08 грн
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S29GL128P90TFCR20 S29GL128P90TFCR20 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
на замовлення 204 шт:
термін постачання 21-31 дні (днів)
1+521.10 грн
10+445.60 грн
25+425.00 грн
40+389.30 грн
80+375.57 грн
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S29GL128P90TFCR10 S29GL128P90TFCR10 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
на замовлення 182 шт:
термін постачання 21-31 дні (днів)
1+546.77 грн
10+481.03 грн
25+471.84 грн
40+439.58 грн
91+394.44 грн
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IRF7820PBF IRF7820PBF Infineon Technologies irf7820pbf.pdf?fileId=5546d462533600a401535608c10e1d00 Description: MOSFET N CH 200V 3.7A 8-SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
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IRFSL7534PBF IRFSL7534PBF Infineon Technologies irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7 Description: MOSFET N-CH 60V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
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IRF7473PBF IRF7473PBF Infineon Technologies irf7473pbf.pdf?fileId=5546d462533600a4015355ff504c1c20 Description: MOSFET N-CH 100V 6.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 25 V
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IRF8714TRPBFXTMA1 IRF8714TRPBFXTMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
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IPF011N08NM6ATMA1 IPF011N08NM6ATMA1 Infineon Technologies infineon-ipf011n08nm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 271A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 279µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+235.81 грн
Мінімальне замовлення: 1000
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AUIRF3710ZSTRL AUIRF3710ZSTRL Infineon Technologies Infineon-auirf3710z-DataSheet-v01_01-EN.pdf?fileId=5546d4626c1f3dc3016c4d844dab18b7 Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Qualification: AEC-Q101
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IRPS5401MXI03TRP Infineon Technologies Infineon-Digital_voltage_regulator_PMIC_IRPS5401-PB-v01_01-EN.pdf?fileId=5546d46258fc0bc10159957c0dbf2313 Description: IC REG
Packaging: Tape & Reel (TR)
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IRPS5401MXI04TRPAUMA1 IRPS5401MXI04TRPAUMA1 Infineon Technologies Infineon-IRPS5401M-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cd69d402139db Description: IC REG ADJ 50A 5OUT 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 5
Current - Output: 50A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Negative
Frequency - Switching: 200kHz ~ 1MHz
Voltage - Input (Max): 12V
Supplier Device Package: 56-QFN (7x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.6V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 0.5V
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BGMC1210E6327XUMA1 BGMC1210E6327XUMA1 Infineon Technologies Infineon-BGMC1210-DataSheet-v01_05-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2c3530295 Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
RF Type: Cellular
Voltage - Supply: 3.1V ~ 5.5V
Current - Supply: 4.2mA
Supplier Device Package: PG-VQFN-32-24
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S2GOMEMSMICIM69DTOBO1 S2GOMEMSMICIM69DTOBO1 Infineon Technologies Infineon-IM69D130_Microphone_Shield2Go-GS-v01_00-EN.pdf?fileId=5546d462677d0f4601677f3486ed0941 Description: BOARD
Packaging: Bulk
Function: Microphone
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM69D130
Platform: Shield2Go
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
1+4249.22 грн
10+4082.77 грн
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IRF7389PBF IRF7389PBF Infineon Technologies irf7389pbf.pdf?fileId=5546d462533600a4015355f9f3441b90 description Description: MOSFET N/P-CH 30V 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
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TLE4984CHTE6747HAMA1 TLE4984CHTE6747HAMA1 Infineon Technologies TLE4984C_PB.pdf?fileId=db3a304335c2937a0135ce52edfb6c0e Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-91
Test Condition: 25°C
на замовлення 1506 шт:
термін постачання 21-31 дні (днів)
2+296.91 грн
5+255.93 грн
10+244.72 грн
25+217.23 грн
50+208.74 грн
100+200.96 грн
500+182.26 грн
Мінімальне замовлення: 2
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TLE4984CHTE6747HAMA1 TLE4984CHTE6747HAMA1 Infineon Technologies TLE4984C_PB.pdf?fileId=db3a304335c2937a0135ce52edfb6c0e Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-91
Test Condition: 25°C
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TLE4983CHTE6747HAMA1 TLE4983CHTE6747HAMA1 Infineon Technologies TLE498320080527TLE4983CHTE6747supplementV10.pdf Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Programmable
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Polarization: North Pole
Mounting Type: Through Hole
Function: Programmable
Operating Temperature: -40°C ~ 150°C
Technology: Hall Effect
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-91
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TLE4983CHTE6747HAMA1 TLE4983CHTE6747HAMA1 Infineon Technologies TLE498320080527TLE4983CHTE6747supplementV10.pdf Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Programmable
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Polarization: North Pole
Mounting Type: Through Hole
Function: Programmable
Operating Temperature: -40°C ~ 150°C
Technology: Hall Effect
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-91
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+251.62 грн
Мінімальне замовлення: 1500
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TLE49421CHAMA2 TLE49421CHAMA2 Infineon Technologies Infineon-TLE4942-1C-DS-v04_00-EN.pdf?fileId=5546d4625607bd13015654bf69b908cb Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
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TLE49421CHAMA2 TLE49421CHAMA2 Infineon Technologies Infineon-TLE4942-1C-DS-v04_00-EN.pdf?fileId=5546d4625607bd13015654bf69b908cb Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
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TLE4953CE0184HAMA1 Infineon Technologies Description: SPEED & CURRENT SENSORS PG-SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source, PWM
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Sensing Range: ±120mT
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-4
Test Condition: 25°C
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TLE4929CX2AM38NHAMA1 TLE4929CX2AM38NHAMA1 Infineon Technologies Infineon-TLE4929C_59-EEPROM_Programming_Guide-ApplicationNotes-v01_02-EN.pdf?fileId=5546d462636cc8fb01636f880b304ea9 Description: SPEED & CURRENT SENSORS PG-SSO-3
Features: Programmable, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-52
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+152.70 грн
Мінімальне замовлення: 1500
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TLE4983CHTNE6847HAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
104+237.54 грн
Мінімальне замовлення: 104
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TLE4924C2E6547HAMA1 TLE4924C2E6547HAMA1 Infineon Technologies TLE4924C_pb.pdf?fileId=db3a304332ae7b090132af75a28d013c Description: MAGNETIC SWITCH SSO-3-92
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Mounting Type: Through Hole
Supplier Device Package: PG-SSO-3-92
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TLE4998S3CHAMA1 TLE4998S3CHAMA1 Infineon Technologies TLE4998S3C_Data_Sheet_Rev1.0.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30431ce5fb52011d3ecb064425c2 Description: SENSOR HALL EFFECT SENT SM8
Features: Selectable Scale, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: SOT-223-8
Output Type: SENT
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: SM8
Grade: Automotive
Qualification: AEC-Q100
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CYAT837AZA77-42002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
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CYAT837AZA88-42002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
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CYAT837AZA98-42002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
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CYAT837AZS77-42002 CYAT837AZS77-42002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT837AZS88-42002 CYAT837AZS88-42002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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S99-50577 Infineon Technologies Description: INFINEON
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
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IRFR24N15DPBF IRFR24N15DPBF Infineon Technologies irfr24n15dpbf.pdf?fileId=5546d462533600a40153562dc1162081 description Description: MOSFET N-CH 150V 24A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
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BC817K25WH6327XTSA1 BC817K25WH6327XTSA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 92600 шт:
термін постачання 21-31 дні (днів)
7947+3.26 грн
Мінімальне замовлення: 7947
В кошику  од. на суму  грн.
SAK-TC1367A264F150EFAAKXUMA1 Infineon Technologies Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
30+770.87 грн
Мінімальне замовлення: 30
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IPP039N10N5XKSA1 IPP039N10N5XKSA1 Infineon Technologies Description: MV POWER MOS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
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SHIELDBTS500151TADTOBO1 SHIELDBTS500151TADTOBO1 Infineon Technologies Infineon-Protected_Switch_Shield_with_BTS50015-1TAD_for_Arduino-GS-v01_00-EN.pdf?fileId=5546d462580663ef01583e4e1c0d1844 Description: EVAL 12V PROTECT SWITCH SHIELD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS50015-1TAD
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+6002.47 грн
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IPI70R950CEXKSA1 IPI70R950CEXKSA1 Infineon Technologies Infineon-IPD70R950CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a32b85797d3c Description: CONSUMER
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
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CYAT847AZS98-42002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 720 шт:
термін постачання 21-31 дні (днів)
1+2705.60 грн
10+2402.95 грн
72+2294.98 грн
144+1925.70 грн
288+1837.02 грн
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CY9AF342LBQN-G-AVE2 CY9AF342LBQN-G-AVE2 Infineon Technologies Infineon-CY9A340NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee01fbe65a4 Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
DigiKey Programmable: Not Verified
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CY9AF342LAQN-G-AVE2 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
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IRF3808SPBF IRF3808SPBF Infineon Technologies irf3808spbf.pdf?fileId=5546d462533600a4015364c3bcef29bc Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
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IR2130JTRPBF IR2130JTRPBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IRF3710ZSTRLPBF IRF3710ZSTRLPBF Infineon Technologies irf3710zpbf.pdf?fileId=5546d462533600a4015355dfb3991950 Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
800+59.08 грн
1600+52.66 грн
2400+50.50 грн
4000+47.20 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRF3710ZSTRLPBF IRF3710ZSTRLPBF Infineon Technologies irf3710zpbf.pdf?fileId=5546d462533600a4015355dfb3991950 Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
на замовлення 16306 шт:
термін постачання 21-31 дні (днів)
2+182.26 грн
10+113.05 грн
100+77.34 грн
Мінімальне замовлення: 2
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IRF3710PBF IRF3710PBF Infineon Technologies irf3710pbf.pdf?fileId=5546d462533600a4015355df95df1947 Description: MOSFET N-CH 100V 57A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
на замовлення 6051 шт:
термін постачання 21-31 дні (днів)
3+167.71 грн
10+103.57 грн
100+70.66 грн
500+53.08 грн
1000+48.83 грн
2000+45.26 грн
5000+43.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF3710ZPBF IRF3710ZPBF Infineon Technologies irf3710zpbf.pdf?fileId=5546d462533600a4015355dfb3991950 Description: MOSFET N-CH 100V 59A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
на замовлення 1792 шт:
термін постачання 21-31 дні (днів)
3+149.74 грн
10+91.87 грн
100+62.29 грн
500+46.56 грн
1000+42.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF3710ZLPBF IRF3710ZLPBF Infineon Technologies IRF3710Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 100V 59A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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CY8C24633-24PVXI CY8C24633-24PVXI Infineon Technologies Infineon-CY8C24633_PSoC_Programmable_System-on-Chip-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6f18d3d96&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 2x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 25
DigiKey Programmable: Not Verified
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IR2118PBF IR2118PBF Infineon Technologies ir2117.pdf?fileId=5546d462533600a4015355c84331168d Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 4050 шт:
термін постачання 21-31 дні (днів)
2+213.92 грн
10+155.32 грн
50+134.75 грн
100+120.48 грн
250+114.18 грн
500+111.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FF300R07KE4HOSA1 FF300R07KE4HOSA1 Infineon Technologies Infineon-FF300R07KE4-DS-v02_00-en_de.pdf?fileId=db3a30432dbf3762012dc6c33cc835ac Description: IGBT MODULE 650V 940W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+8939.10 грн
В кошику  од. на суму  грн.
IRG4BC30W-SPBF IRG4BC30W-SPBF Infineon Technologies irg4bc30w-spbf.pdf?fileId=5546d462533600a4015356430dd12292 Description: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 25ns/99ns
Switching Energy: 130µJ (on), 130µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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C161PILF3VCABXUMA1 2156_c161pi_ds_199907.pdf_folderid%3Ddb3a304412b407950112b4391ae36c3b%26fileid%3Ddb3a304412b407950112b4391b6f6c3c.pdf
C161PILF3VCABXUMA1
Виробник: Infineon Technologies
Description: SAB-C161PI - LEGACY 16-BIT MICRO
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 3K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Number of I/O: 76
DigiKey Programmable: Not Verified
на замовлення 1228 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+1394.41 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
S29GL512S10DHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL512S10DHI010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
на замовлення 5047 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+660.57 грн
10+564.91 грн
25+538.68 грн
40+493.34 грн
80+475.89 грн
260+471.09 грн
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IRFR120ZPBF irfr120zpbf.pdf?fileId=5546d462533600a40153562d2f422050
IRFR120ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
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MC68HC705C8ACPB
Виробник: Infineon Technologies
Description: MC68HC8-BMICROCONTROLLER
Packaging: Bulk
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IRL3715ZPBF IRL3715Z(S,L)PbF.pdf
IRL3715ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
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TLE493DW2B6MS2GOTOBO1 InfineonInfineon3DMS2GOTLE493DW2B6UMv0100E.pdf
TLE493DW2B6MS2GOTOBO1
Виробник: Infineon Technologies
Description: 3D MAGNETIC SENSOR 2GO
Packaging: Bulk
Interface: I2C, Serial
Contents: Board(s)
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLE493D-W2B6
Supplied Contents: Board(s)
Sensing Range: ±160mT ~ ±230mT
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2179.37 грн
В кошику  од. на суму  грн.
IR2113PBF description IR2113SPBF.pdf
IR2113PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
на замовлення 4162 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+255.84 грн
10+185.06 грн
25+169.90 грн
100+143.75 грн
250+136.26 грн
500+131.76 грн
1000+125.95 грн
2500+122.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF7314PBF description irf7314pbf.pdf?fileId=5546d462533600a4015355f57b901b2c
IRF7314PBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 5.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
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CY8C20110-LDX2I download
CY8C20110-LDX2I
Виробник: Infineon Technologies
Description: IC CAPSENSE EXP 10 I/O 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I²C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Current - Supply: 1.5mA
Number of Inputs: Up to 10
Supplier Device Package: 16-QFN (3x3)
Proximity Detection: No
LED Driver Channels: Up to 10
DigiKey Programmable: Not Verified
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IPP023N10N5XKSA1 Infineon-IPP023N10N5-DS-v02_03-EN.pdf?fileId=5546d461454603990145d5a675f86494
IPP023N10N5XKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+379.06 грн
50+190.90 грн
100+174.08 грн
В кошику  од. на суму  грн.
S29GL128P90TFCR20 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90TFCR20
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
на замовлення 204 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+521.10 грн
10+445.60 грн
25+425.00 грн
40+389.30 грн
80+375.57 грн
В кошику  од. на суму  грн.
S29GL128P90TFCR10 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90TFCR10
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
на замовлення 182 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+546.77 грн
10+481.03 грн
25+471.84 грн
40+439.58 грн
91+394.44 грн
В кошику  од. на суму  грн.
IRF7820PBF irf7820pbf.pdf?fileId=5546d462533600a401535608c10e1d00
IRF7820PBF
Виробник: Infineon Technologies
Description: MOSFET N CH 200V 3.7A 8-SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
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IRFSL7534PBF irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7
IRFSL7534PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
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IRF7473PBF irf7473pbf.pdf?fileId=5546d462533600a4015355ff504c1c20
IRF7473PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 6.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 25 V
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IRF8714TRPBFXTMA1
IRF8714TRPBFXTMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
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IPF011N08NM6ATMA1 infineon-ipf011n08nm6-datasheet-en.pdf
IPF011N08NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 271A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 279µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+235.81 грн
Мінімальне замовлення: 1000
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AUIRF3710ZSTRL Infineon-auirf3710z-DataSheet-v01_01-EN.pdf?fileId=5546d4626c1f3dc3016c4d844dab18b7
AUIRF3710ZSTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Qualification: AEC-Q101
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IRPS5401MXI03TRP Infineon-Digital_voltage_regulator_PMIC_IRPS5401-PB-v01_01-EN.pdf?fileId=5546d46258fc0bc10159957c0dbf2313
Виробник: Infineon Technologies
Description: IC REG
Packaging: Tape & Reel (TR)
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IRPS5401MXI04TRPAUMA1 Infineon-IRPS5401M-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cd69d402139db
IRPS5401MXI04TRPAUMA1
Виробник: Infineon Technologies
Description: IC REG ADJ 50A 5OUT 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 5
Current - Output: 50A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Negative
Frequency - Switching: 200kHz ~ 1MHz
Voltage - Input (Max): 12V
Supplier Device Package: 56-QFN (7x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.6V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 0.5V
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BGMC1210E6327XUMA1 Infineon-BGMC1210-DataSheet-v01_05-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2c3530295
BGMC1210E6327XUMA1
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
RF Type: Cellular
Voltage - Supply: 3.1V ~ 5.5V
Current - Supply: 4.2mA
Supplier Device Package: PG-VQFN-32-24
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S2GOMEMSMICIM69DTOBO1 Infineon-IM69D130_Microphone_Shield2Go-GS-v01_00-EN.pdf?fileId=5546d462677d0f4601677f3486ed0941
S2GOMEMSMICIM69DTOBO1
Виробник: Infineon Technologies
Description: BOARD
Packaging: Bulk
Function: Microphone
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM69D130
Platform: Shield2Go
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4249.22 грн
10+4082.77 грн
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IRF7389PBF description irf7389pbf.pdf?fileId=5546d462533600a4015355f9f3441b90
IRF7389PBF
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
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TLE4984CHTE6747HAMA1 TLE4984C_PB.pdf?fileId=db3a304335c2937a0135ce52edfb6c0e
TLE4984CHTE6747HAMA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-91
Test Condition: 25°C
на замовлення 1506 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+296.91 грн
5+255.93 грн
10+244.72 грн
25+217.23 грн
50+208.74 грн
100+200.96 грн
500+182.26 грн
Мінімальне замовлення: 2
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TLE4984CHTE6747HAMA1 TLE4984C_PB.pdf?fileId=db3a304335c2937a0135ce52edfb6c0e
TLE4984CHTE6747HAMA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-91
Test Condition: 25°C
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TLE4983CHTE6747HAMA1 TLE498320080527TLE4983CHTE6747supplementV10.pdf
TLE4983CHTE6747HAMA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Programmable
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Polarization: North Pole
Mounting Type: Through Hole
Function: Programmable
Operating Temperature: -40°C ~ 150°C
Technology: Hall Effect
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-91
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TLE4983CHTE6747HAMA1 TLE498320080527TLE4983CHTE6747supplementV10.pdf
TLE4983CHTE6747HAMA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Programmable
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Polarization: North Pole
Mounting Type: Through Hole
Function: Programmable
Operating Temperature: -40°C ~ 150°C
Technology: Hall Effect
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-91
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+251.62 грн
Мінімальне замовлення: 1500
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TLE49421CHAMA2 Infineon-TLE4942-1C-DS-v04_00-EN.pdf?fileId=5546d4625607bd13015654bf69b908cb
TLE49421CHAMA2
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
товару немає в наявності
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TLE49421CHAMA2 Infineon-TLE4942-1C-DS-v04_00-EN.pdf?fileId=5546d4625607bd13015654bf69b908cb
TLE49421CHAMA2
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
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TLE4953CE0184HAMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source, PWM
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Sensing Range: ±120mT
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-4
Test Condition: 25°C
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TLE4929CX2AM38NHAMA1 Infineon-TLE4929C_59-EEPROM_Programming_Guide-ApplicationNotes-v01_02-EN.pdf?fileId=5546d462636cc8fb01636f880b304ea9
TLE4929CX2AM38NHAMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-3
Features: Programmable, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-52
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+152.70 грн
Мінімальне замовлення: 1500
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TLE4983CHTNE6847HAMA1 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
104+237.54 грн
Мінімальне замовлення: 104
В кошику  од. на суму  грн.
TLE4924C2E6547HAMA1 TLE4924C_pb.pdf?fileId=db3a304332ae7b090132af75a28d013c
TLE4924C2E6547HAMA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SSO-3-92
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Mounting Type: Through Hole
Supplier Device Package: PG-SSO-3-92
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TLE4998S3CHAMA1 TLE4998S3C_Data_Sheet_Rev1.0.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30431ce5fb52011d3ecb064425c2
TLE4998S3CHAMA1
Виробник: Infineon Technologies
Description: SENSOR HALL EFFECT SENT SM8
Features: Selectable Scale, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: SOT-223-8
Output Type: SENT
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: SM8
Grade: Automotive
Qualification: AEC-Q100
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CYAT837AZA77-42002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
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CYAT837AZA88-42002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
товару немає в наявності
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CYAT837AZA98-42002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
товару немає в наявності
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CYAT837AZS77-42002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
CYAT837AZS77-42002
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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CYAT837AZS88-42002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
CYAT837AZS88-42002
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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S99-50577
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
товару немає в наявності
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IRFR24N15DPBF description irfr24n15dpbf.pdf?fileId=5546d462533600a40153562dc1162081
IRFR24N15DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 24A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
товару немає в наявності
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BC817K25WH6327XTSA1 4a-BC-817-40-E6433.pdf
BC817K25WH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.5A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 92600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7947+3.26 грн
Мінімальне замовлення: 7947
В кошику  од. на суму  грн.
SAK-TC1367A264F150EFAAKXUMA1
Виробник: Infineon Technologies
Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
30+770.87 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IPP039N10N5XKSA1
IPP039N10N5XKSA1
Виробник: Infineon Technologies
Description: MV POWER MOS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
товару немає в наявності
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SHIELDBTS500151TADTOBO1 Infineon-Protected_Switch_Shield_with_BTS50015-1TAD_for_Arduino-GS-v01_00-EN.pdf?fileId=5546d462580663ef01583e4e1c0d1844
SHIELDBTS500151TADTOBO1
Виробник: Infineon Technologies
Description: EVAL 12V PROTECT SWITCH SHIELD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS50015-1TAD
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6002.47 грн
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IPI70R950CEXKSA1 Infineon-IPD70R950CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a32b85797d3c
IPI70R950CEXKSA1
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
товару немає в наявності
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CYAT847AZS98-42002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 720 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2705.60 грн
10+2402.95 грн
72+2294.98 грн
144+1925.70 грн
288+1837.02 грн
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CY9AF342LBQN-G-AVE2 Infineon-CY9A340NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee01fbe65a4
CY9AF342LBQN-G-AVE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
DigiKey Programmable: Not Verified
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CY9AF342LAQN-G-AVE2
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
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IRF3808SPBF irf3808spbf.pdf?fileId=5546d462533600a4015364c3bcef29bc
IRF3808SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
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IR2130JTRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
IR2130JTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IRF3710ZSTRLPBF irf3710zpbf.pdf?fileId=5546d462533600a4015355dfb3991950
IRF3710ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+59.08 грн
1600+52.66 грн
2400+50.50 грн
4000+47.20 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRF3710ZSTRLPBF irf3710zpbf.pdf?fileId=5546d462533600a4015355dfb3991950
IRF3710ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
на замовлення 16306 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+182.26 грн
10+113.05 грн
100+77.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF3710PBF irf3710pbf.pdf?fileId=5546d462533600a4015355df95df1947
IRF3710PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 57A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
на замовлення 6051 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+167.71 грн
10+103.57 грн
100+70.66 грн
500+53.08 грн
1000+48.83 грн
2000+45.26 грн
5000+43.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF3710ZPBF irf3710zpbf.pdf?fileId=5546d462533600a4015355dfb3991950
IRF3710ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 59A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
на замовлення 1792 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.74 грн
10+91.87 грн
100+62.29 грн
500+46.56 грн
1000+42.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF3710ZLPBF IRF3710Z%28S%2CL%29PbF.pdf
IRF3710ZLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 59A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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CY8C24633-24PVXI Infineon-CY8C24633_PSoC_Programmable_System-on-Chip-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6f18d3d96&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C24633-24PVXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 2x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 25
DigiKey Programmable: Not Verified
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IR2118PBF ir2117.pdf?fileId=5546d462533600a4015355c84331168d
IR2118PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 4050 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+213.92 грн
10+155.32 грн
50+134.75 грн
100+120.48 грн
250+114.18 грн
500+111.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FF300R07KE4HOSA1 Infineon-FF300R07KE4-DS-v02_00-en_de.pdf?fileId=db3a30432dbf3762012dc6c33cc835ac
FF300R07KE4HOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 650V 940W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8939.10 грн
В кошику  од. на суму  грн.
IRG4BC30W-SPBF irg4bc30w-spbf.pdf?fileId=5546d462533600a4015356430dd12292
IRG4BC30W-SPBF
Виробник: Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 25ns/99ns
Switching Energy: 130µJ (on), 130µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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