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IQE022N06LM5ATMA1 IQE022N06LM5ATMA1 Infineon Technologies Infineon-IQE022N06LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701866d719cfd51ba Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
на замовлення 4173 шт:
термін постачання 21-31 дні (днів)
2+173.48 грн
10+109.49 грн
100+86.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISZ062N06NM6ATMA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
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ISZ022N06LM6ATMA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
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IR1167ASTRPBF IR1167ASTRPBF Infineon Technologies ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
DigiKey Programmable: Not Verified
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IR1167ASTRPBF IR1167ASTRPBF Infineon Technologies ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
DigiKey Programmable: Not Verified
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IR1167BSTRPBF IR1167BSTRPBF Infineon Technologies ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
DigiKey Programmable: Not Verified
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IQD020N10NM5CGATMA1 IQD020N10NM5CGATMA1 Infineon Technologies Infineon-IQD020N10NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8cc0be053c Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
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IQD020N10NM5CGATMA1 IQD020N10NM5CGATMA1 Infineon Technologies Infineon-IQD020N10NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8cc0be053c Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
на замовлення 4932 шт:
термін постачання 21-31 дні (днів)
2+312.42 грн
10+227.62 грн
25+209.36 грн
100+177.60 грн
250+168.60 грн
500+163.17 грн
1000+156.10 грн
2500+151.47 грн
Мінімальне замовлення: 2
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KITLGPWRBOM010TOBO1 KITLGPWRBOM010TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UserManual-v02_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL BOARD FOR IPT020N10N5
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IPT020N10N5
Supplied Contents: Board(s)
Secondary Attributes: On-Board Test Points
Embedded: Yes, MCU
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IAUZ40N10S5L120ATMA1 IAUZ40N10S5L120ATMA1 Infineon Technologies Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217 Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
Qualification: AEC-Q101
на замовлення 3083 шт:
термін постачання 21-31 дні (днів)
3+125.79 грн
10+76.64 грн
100+51.43 грн
500+38.13 грн
1000+34.87 грн
2000+34.76 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRG7PH30K10DPBF IRG7PH30K10DPBF Infineon Technologies IRG7PH30K10DPBF.pdf Description: IGBT 1200V 30A 180W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/110ns
Switching Energy: 530µJ (on), 380µJ (off)
Test Condition: 600V, 9A, 22Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 180 W
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IRG7PH46UPBF IRG7PH46UPBF Infineon Technologies IRG7PH46UPbF%2CU-EP.pdf Description: IGBT TRENCH 1200V 130A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.56mJ (on), 1.78mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 469 W
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AUIRFR2307Z AUIRFR2307Z Infineon Technologies AUIRFR2307Z.pdf Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Qualification: AEC-Q101
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BTS70402EPGXUMA1 BTS70402EPGXUMA1 Infineon Technologies Infineon-BTS7040-2EPG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e617836e449f Description: PROFET
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 18V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 18V
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3030 шт:
термін постачання 21-31 дні (днів)
3+114.28 грн
10+80.75 грн
25+73.34 грн
100+61.19 грн
250+57.54 грн
500+55.34 грн
1000+52.65 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS70302EPGXUMA1 BTS70302EPGXUMA1 Infineon Technologies Infineon-BTS7030-2EPG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e61777e2449c Description: PROFET
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 13.5mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 18V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 18V
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2784 шт:
термін постачання 21-31 дні (днів)
3+146.35 грн
10+104.03 грн
25+94.66 грн
100+79.19 грн
250+74.59 грн
500+71.83 грн
1000+68.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF3007PBF IRF3007PBF Infineon Technologies irf3007pbf.pdf?fileId=5546d462533600a4015355deea2a1908 description Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
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FF750R17ME7B11BPSA1 FF750R17ME7B11BPSA1 Infineon Technologies Infineon-FF750R17ME7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bbdf21695688 Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+16606.10 грн
В кошику  од. на суму  грн.
CY9AFA42MAPMC-GNE2 CY9AFA42MAPMC-GNE2 Infineon Technologies Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
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CY9AF342LAPMC-GNE2 CY9AF342LAPMC-GNE2 Infineon Technologies Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
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IPD50R399CPATMA1 IPD50R399CPATMA1 Infineon Technologies Infineon-IPD50R399CP-DS-v02_01-en.pdf?fileId=db3a30432b16d655012b19cbfae82d36 Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
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BC846SH6433XTMA1 BC846SH6433XTMA1 Infineon Technologies bc846s_bc846u_bc847s.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d01144990b2e801cf Description: TRANS 2NPN 65V 0.1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
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BC846SH6727XTSA1 BC846SH6727XTSA1 Infineon Technologies bc846s_bc846u_bc847s.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d01144990b2e801cf Description: TRANS 2NPN 65V 0.1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
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CY7C53150-20AXIT CY7C53150-20AXIT Infineon Technologies Infineon-CY7C53150_CY7C53120_Neuron_Chip_Network_Processor-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca599a4309&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC PROCESSOR NEURON 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Interface: Serial
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Controller Series: CY7C531xx
Program Memory Type: FLASH (512 B)
Applications: Network Processor
Core Processor: Pipelined
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 19
DigiKey Programmable: Not Verified
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CY7C53150-20AXIT CY7C53150-20AXIT Infineon Technologies Infineon-CY7C53150_CY7C53120_Neuron_Chip_Network_Processor-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca599a4309&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC PROCESSOR NEURON 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Interface: Serial
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Controller Series: CY7C531xx
Program Memory Type: FLASH (512 B)
Applications: Network Processor
Core Processor: Pipelined
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 19
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+6196.66 грн
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BC 807-25 E6433 BC 807-25 E6433 Infineon Technologies bc807series_bc808series.pdf Description: TRANS PNP 45V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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IRF7103TRPBFXTMA1 IRF7103TRPBFXTMA1 Infineon Technologies irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6 Description: MOSFET 2N-CH 50V 3A 8DSO-902
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PG-DSO-8-902
на замовлення 3018 шт:
термін постачання 21-31 дні (днів)
5+78.93 грн
10+47.66 грн
100+31.26 грн
500+22.72 грн
1000+20.59 грн
2000+18.79 грн
Мінімальне замовлення: 5
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BAT60BE6359HTMA1 BAT60BE6359HTMA1 Infineon Technologies Infineon-BAT60BSERIES-DS-v01_01-en.pdf Description: DIODE SCHOTTKY 10V 3A PGSOD3232
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 8 V
Qualification: AEC-Q101
на замовлення 2606 шт:
термін постачання 21-31 дні (днів)
11+30.42 грн
18+18.05 грн
100+12.64 грн
500+8.88 грн
1000+6.74 грн
2000+6.54 грн
Мінімальне замовлення: 11
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IPU50R950CEBKMA1 IPU50R950CEBKMA1 Infineon Technologies IPx50R950CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043382e837301385194b31e1064 Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
на замовлення 5380 шт:
термін постачання 21-31 дні (днів)
1731+12.55 грн
Мінімальне замовлення: 1731
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IPU50R950CEAKMA1 IPU50R950CEAKMA1 Infineon Technologies Infineon-IPU50R950CE-DS-v02_03-EN.pdf?fileId=db3a3043382e837301385194b31e1064 Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
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IPU50R2K0CE IPU50R2K0CE Infineon Technologies Part_Number_Guide_Web.pdf Description: N-CHANNEL POWER MOSFET CE
Packaging: Bulk
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
2308+10.12 грн
Мінімальне замовлення: 2308
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IPU50R3K0CE IPU50R3K0CE Infineon Technologies Part_Number_Guide_Web.pdf Description: N-CHANNEL POWER MOSFET CE
Packaging: Bulk
на замовлення 250540 шт:
термін постачання 21-31 дні (днів)
2597+9.34 грн
Мінімальне замовлення: 2597
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BTS5572EAUMA1 BTS5572EAUMA1 Infineon Technologies BTS5572E.pdf Description: IC LED DRVR RGLTR SPI 24A 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 5
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 24A
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-DSO-36-36
Dimming: SPI
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 28V
Grade: Automotive
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IR21084SPBF IR21084SPBF Infineon Technologies ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 description Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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DD1200S12H4HOSA1 DD1200S12H4HOSA1 Infineon Technologies Infineon-DD1200S12H4-DS-v02_03-EN.pdf?fileId=db3a304335f1f4b60136063f715759af Description: IGBT MODULE 1200V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1200000 W
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IRF7328TRPBF IRF7328TRPBF Infineon Technologies infineon-irf7328-datasheet-en.pdf Description: MOSFET 2P-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
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IRF7328TRPBF IRF7328TRPBF Infineon Technologies infineon-irf7328-datasheet-en.pdf Description: MOSFET 2P-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
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S29GL01GS11DHIV10 S29GL01GS11DHIV10 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
1+967.69 грн
10+864.39 грн
25+837.44 грн
50+766.86 грн
100+747.98 грн
260+722.31 грн
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IDH09G65C5XKSA2 IDH09G65C5XKSA2 Infineon Technologies Infineon-IDH09G65C5-DS-v02_02-en.pdf?fileId=db3a30433a047ba0013a069a60db0147 Description: DIODE SIL CARB 650V 9A TO220-2-1
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 9 A
Current - Reverse Leakage @ Vr: 160 µA @ 650 V
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)
133+177.71 грн
Мінімальне замовлення: 133
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IMYH200R100M1HXKSA1 IMYH200R100M1HXKSA1 Infineon Technologies Infineon-IMYH200R100M1H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6ef05a01123 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 131mOhm @ 10A, 18V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 6mA
Supplier Device Package: PG-TO247-4-U04
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
на замовлення 1115 шт:
термін постачання 21-31 дні (днів)
1+1135.41 грн
30+676.07 грн
120+638.25 грн
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TLD1173-1ET Infineon Technologies Description: IC LED DRV LIN PWM 500MA TO263-7
Packaging: Tape & Reel (TR)
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IPD60R460CEAUMA1 IPD60R460CEAUMA1 Infineon Technologies Infineon-IPD60R460CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c8366df61f0e Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tj)
Rds On (Max) @ Id, Vgs: 460mOhm @ 3.4A, 10V
Power Dissipation (Max): 74W
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
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S6J332EHBESE20000 S6J332EHBESE20000 Infineon Technologies Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 35x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+1189.67 грн
10+915.46 грн
60+847.48 грн
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IRFR7740PBF IRFR7740PBF Infineon Technologies irfr7740pbf.pdf?fileId=5546d462533600a401535635c2cc2122 Description: MOSFET N-CH 75V 87A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 52A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
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IRFR7740TRPBF IRFR7740TRPBF Infineon Technologies irfr7740pbf.pdf?fileId=5546d462533600a401535635c2cc2122 Description: MOSFET N-CH 75V 87A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 52A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
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IRFR7740TRPBF IRFR7740TRPBF Infineon Technologies irfr7740pbf.pdf?fileId=5546d462533600a401535635c2cc2122 Description: MOSFET N-CH 75V 87A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 52A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
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CY14B104NA-BA25XIT CY14B104NA-BA25XIT Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY7C1381KVE33-133AXI CY7C1381KVE33-133AXI Infineon Technologies Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
1+2741.10 грн
10+2439.91 грн
25+2361.43 грн
72+2132.31 грн
144+2078.42 грн
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EVALHB2EDL803XG4CTOBO1 EVALHB2EDL803XG4CTOBO1 Infineon Technologies Infineon-Evaluation_board_EiceDRIVER_EVAL_HB_2EDL803X_G3C-G4B-G4C-UserManual-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188aea7cf730194 Description: EVAL BOARD FOR 2EDL803XG4C
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDL803xG4C
Supplied Contents: Board(s)
Primary Attributes: 48V Input Voltage
Secondary Attributes: On-Board Test Points
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+15393.41 грн
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S25FL256SDSMFB000 S25FL256SDSMFB000 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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IRF3704ZSPBF IRF3704ZSPBF Infineon Technologies irf3704zpbf.pdf?fileId=5546d462533600a4015355df54f71929 Description: MOSFET N-CH 20V 67A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
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IRF3704SPBF IRF3704SPBF Infineon Technologies IRF3704%28S%2CL%29PbF.pdf Description: MOSFET N-CH 20V 77A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V
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IPC26N12NX1SA1 Infineon Technologies Infineon-IPC26N12N-DS-v02_05-EN.pdf?fileId=5546d4624fb7fef2014fd029d778654c Description: MOSFET N-CH 120V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 244µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 120 V
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IPC302N15N3X1SA1 Infineon Technologies DS_IPC302N15N3_2_5.pdf?fileId=db3a30434422e00e01442b691dc3512f Description: MOSFET N-CH 150V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150 V
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IPC302N20NFDX1SA1 Infineon Technologies Infineon-IPC302N20NFD-DS-v02_00-EN.pdf?fileId=5546d46254bdc4f50154c8114c525a05 Description: MOSFET N-CH 200V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 200 V
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SIDC23D120E6X1SA1 Infineon Technologies SIDC23D120E6_L4272P.pdf?folderId=db3a304412b407950112b435de3b63f8&fileId=db3a304412b407950112b435deb863f9 Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC23D120F6X1SA1 Infineon Technologies SIDC23D120F6_L4275M.pdf?folderId=db3a304412b407950112b4355f2462ce&fileId=db3a304412b407950112b4355f9d62cf Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 25 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC23D120H6X1SA1 Infineon Technologies SIDC23D120H6.pdf Description: DIODE GP 1.2KV 35A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 35 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC23D60E6X1SA4 Infineon Technologies SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8 Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC23D60E6YX1SA1 Infineon Technologies SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8 Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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FF2000XTR17IE5BPSA1 FF2000XTR17IE5BPSA1 Infineon Technologies Infineon-FF2000XTR17IE5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d0189f82d1e0951fd Description: PP IHM I
Packaging: Tray
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+82878.41 грн
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IQE022N06LM5ATMA1 Infineon-IQE022N06LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701866d719cfd51ba
IQE022N06LM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
на замовлення 4173 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+173.48 грн
10+109.49 грн
100+86.77 грн
Мінімальне замовлення: 2
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ISZ062N06NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
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ISZ022N06LM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
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IR1167ASTRPBF ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655
IR1167ASTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
DigiKey Programmable: Not Verified
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IR1167ASTRPBF ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655
IR1167ASTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
DigiKey Programmable: Not Verified
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IR1167BSTRPBF ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655
IR1167BSTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
DigiKey Programmable: Not Verified
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IQD020N10NM5CGATMA1 Infineon-IQD020N10NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8cc0be053c
IQD020N10NM5CGATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
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IQD020N10NM5CGATMA1 Infineon-IQD020N10NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8cc0be053c
IQD020N10NM5CGATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
на замовлення 4932 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+312.42 грн
10+227.62 грн
25+209.36 грн
100+177.60 грн
250+168.60 грн
500+163.17 грн
1000+156.10 грн
2500+151.47 грн
Мінімальне замовлення: 2
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KITLGPWRBOM010TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UserManual-v02_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGPWRBOM010TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IPT020N10N5
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IPT020N10N5
Supplied Contents: Board(s)
Secondary Attributes: On-Board Test Points
Embedded: Yes, MCU
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IAUZ40N10S5L120ATMA1 Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217
IAUZ40N10S5L120ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
Qualification: AEC-Q101
на замовлення 3083 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+125.79 грн
10+76.64 грн
100+51.43 грн
500+38.13 грн
1000+34.87 грн
2000+34.76 грн
Мінімальне замовлення: 3
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IRG7PH30K10DPBF IRG7PH30K10DPBF.pdf
IRG7PH30K10DPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 30A 180W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/110ns
Switching Energy: 530µJ (on), 380µJ (off)
Test Condition: 600V, 9A, 22Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 180 W
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IRG7PH46UPBF IRG7PH46UPbF%2CU-EP.pdf
IRG7PH46UPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 130A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.56mJ (on), 1.78mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 469 W
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AUIRFR2307Z AUIRFR2307Z.pdf
AUIRFR2307Z
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Qualification: AEC-Q101
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BTS70402EPGXUMA1 Infineon-BTS7040-2EPG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e617836e449f
BTS70402EPGXUMA1
Виробник: Infineon Technologies
Description: PROFET
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 18V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 18V
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3030 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+114.28 грн
10+80.75 грн
25+73.34 грн
100+61.19 грн
250+57.54 грн
500+55.34 грн
1000+52.65 грн
Мінімальне замовлення: 3
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BTS70302EPGXUMA1 Infineon-BTS7030-2EPG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e61777e2449c
BTS70302EPGXUMA1
Виробник: Infineon Technologies
Description: PROFET
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 13.5mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 18V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 18V
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2784 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.35 грн
10+104.03 грн
25+94.66 грн
100+79.19 грн
250+74.59 грн
500+71.83 грн
1000+68.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF3007PBF description irf3007pbf.pdf?fileId=5546d462533600a4015355deea2a1908
IRF3007PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
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FF750R17ME7B11BPSA1 Infineon-FF750R17ME7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bbdf21695688
FF750R17ME7B11BPSA1
Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+16606.10 грн
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CY9AFA42MAPMC-GNE2
CY9AFA42MAPMC-GNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
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CY9AF342LAPMC-GNE2
CY9AF342LAPMC-GNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
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IPD50R399CPATMA1 Infineon-IPD50R399CP-DS-v02_01-en.pdf?fileId=db3a30432b16d655012b19cbfae82d36
IPD50R399CPATMA1
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
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BC846SH6433XTMA1 bc846s_bc846u_bc847s.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d01144990b2e801cf
BC846SH6433XTMA1
Виробник: Infineon Technologies
Description: TRANS 2NPN 65V 0.1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
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BC846SH6727XTSA1 bc846s_bc846u_bc847s.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d01144990b2e801cf
BC846SH6727XTSA1
Виробник: Infineon Technologies
Description: TRANS 2NPN 65V 0.1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
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CY7C53150-20AXIT Infineon-CY7C53150_CY7C53120_Neuron_Chip_Network_Processor-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca599a4309&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C53150-20AXIT
Виробник: Infineon Technologies
Description: IC PROCESSOR NEURON 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Interface: Serial
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Controller Series: CY7C531xx
Program Memory Type: FLASH (512 B)
Applications: Network Processor
Core Processor: Pipelined
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 19
DigiKey Programmable: Not Verified
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CY7C53150-20AXIT Infineon-CY7C53150_CY7C53120_Neuron_Chip_Network_Processor-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca599a4309&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C53150-20AXIT
Виробник: Infineon Technologies
Description: IC PROCESSOR NEURON 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Interface: Serial
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Controller Series: CY7C531xx
Program Memory Type: FLASH (512 B)
Applications: Network Processor
Core Processor: Pipelined
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 19
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6196.66 грн
В кошику  од. на суму  грн.
BC 807-25 E6433 bc807series_bc808series.pdf
BC 807-25 E6433
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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IRF7103TRPBFXTMA1 irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6
IRF7103TRPBFXTMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 50V 3A 8DSO-902
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PG-DSO-8-902
на замовлення 3018 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+78.93 грн
10+47.66 грн
100+31.26 грн
500+22.72 грн
1000+20.59 грн
2000+18.79 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BAT60BE6359HTMA1 Infineon-BAT60BSERIES-DS-v01_01-en.pdf
BAT60BE6359HTMA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 10V 3A PGSOD3232
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 8 V
Qualification: AEC-Q101
на замовлення 2606 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.42 грн
18+18.05 грн
100+12.64 грн
500+8.88 грн
1000+6.74 грн
2000+6.54 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IPU50R950CEBKMA1 IPx50R950CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043382e837301385194b31e1064
IPU50R950CEBKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
на замовлення 5380 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1731+12.55 грн
Мінімальне замовлення: 1731
В кошику  од. на суму  грн.
IPU50R950CEAKMA1 Infineon-IPU50R950CE-DS-v02_03-EN.pdf?fileId=db3a3043382e837301385194b31e1064
IPU50R950CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
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IPU50R2K0CE Part_Number_Guide_Web.pdf
IPU50R2K0CE
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET CE
Packaging: Bulk
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2308+10.12 грн
Мінімальне замовлення: 2308
В кошику  од. на суму  грн.
IPU50R3K0CE Part_Number_Guide_Web.pdf
IPU50R3K0CE
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET CE
Packaging: Bulk
на замовлення 250540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2597+9.34 грн
Мінімальне замовлення: 2597
В кошику  од. на суму  грн.
BTS5572EAUMA1 BTS5572E.pdf
BTS5572EAUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR SPI 24A 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 5
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 24A
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-DSO-36-36
Dimming: SPI
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 28V
Grade: Automotive
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IR21084SPBF description ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
IR21084SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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DD1200S12H4HOSA1 Infineon-DD1200S12H4-DS-v02_03-EN.pdf?fileId=db3a304335f1f4b60136063f715759af
DD1200S12H4HOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1200000 W
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IRF7328TRPBF infineon-irf7328-datasheet-en.pdf
IRF7328TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
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IRF7328TRPBF infineon-irf7328-datasheet-en.pdf
IRF7328TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
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S29GL01GS11DHIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11DHIV10
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+967.69 грн
10+864.39 грн
25+837.44 грн
50+766.86 грн
100+747.98 грн
260+722.31 грн
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IDH09G65C5XKSA2 Infineon-IDH09G65C5-DS-v02_02-en.pdf?fileId=db3a30433a047ba0013a069a60db0147
IDH09G65C5XKSA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 9A TO220-2-1
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 9 A
Current - Reverse Leakage @ Vr: 160 µA @ 650 V
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
133+177.71 грн
Мінімальне замовлення: 133
В кошику  од. на суму  грн.
IMYH200R100M1HXKSA1 Infineon-IMYH200R100M1H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6ef05a01123
IMYH200R100M1HXKSA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 131mOhm @ 10A, 18V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 6mA
Supplier Device Package: PG-TO247-4-U04
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
на замовлення 1115 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1135.41 грн
30+676.07 грн
120+638.25 грн
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TLD1173-1ET
Виробник: Infineon Technologies
Description: IC LED DRV LIN PWM 500MA TO263-7
Packaging: Tape & Reel (TR)
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IPD60R460CEAUMA1 Infineon-IPD60R460CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c8366df61f0e
IPD60R460CEAUMA1
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tj)
Rds On (Max) @ Id, Vgs: 460mOhm @ 3.4A, 10V
Power Dissipation (Max): 74W
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
товару немає в наявності
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S6J332EHBESE20000 Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e
S6J332EHBESE20000
Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 35x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1189.67 грн
10+915.46 грн
60+847.48 грн
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IRFR7740PBF irfr7740pbf.pdf?fileId=5546d462533600a401535635c2cc2122
IRFR7740PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 87A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 52A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
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IRFR7740TRPBF irfr7740pbf.pdf?fileId=5546d462533600a401535635c2cc2122
IRFR7740TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 87A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 52A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
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IRFR7740TRPBF irfr7740pbf.pdf?fileId=5546d462533600a401535635c2cc2122
IRFR7740TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 87A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 52A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
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CY14B104NA-BA25XIT download
CY14B104NA-BA25XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1381KVE33-133AXI Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
CY7C1381KVE33-133AXI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2741.10 грн
10+2439.91 грн
25+2361.43 грн
72+2132.31 грн
144+2078.42 грн
В кошику  од. на суму  грн.
EVALHB2EDL803XG4CTOBO1 Infineon-Evaluation_board_EiceDRIVER_EVAL_HB_2EDL803X_G3C-G4B-G4C-UserManual-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188aea7cf730194
EVALHB2EDL803XG4CTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2EDL803XG4C
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDL803xG4C
Supplied Contents: Board(s)
Primary Attributes: 48V Input Voltage
Secondary Attributes: On-Board Test Points
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+15393.41 грн
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S25FL256SDSMFB000 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SDSMFB000
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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IRF3704ZSPBF irf3704zpbf.pdf?fileId=5546d462533600a4015355df54f71929
IRF3704ZSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 67A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
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IRF3704SPBF IRF3704%28S%2CL%29PbF.pdf
IRF3704SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 77A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V
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IPC26N12NX1SA1 Infineon-IPC26N12N-DS-v02_05-EN.pdf?fileId=5546d4624fb7fef2014fd029d778654c
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 244µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 120 V
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IPC302N15N3X1SA1 DS_IPC302N15N3_2_5.pdf?fileId=db3a30434422e00e01442b691dc3512f
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150 V
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IPC302N20NFDX1SA1 Infineon-IPC302N20NFD-DS-v02_00-EN.pdf?fileId=5546d46254bdc4f50154c8114c525a05
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 200 V
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SIDC23D120E6X1SA1 SIDC23D120E6_L4272P.pdf?folderId=db3a304412b407950112b435de3b63f8&fileId=db3a304412b407950112b435deb863f9
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товару немає в наявності
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SIDC23D120F6X1SA1 SIDC23D120F6_L4275M.pdf?folderId=db3a304412b407950112b4355f2462ce&fileId=db3a304412b407950112b4355f9d62cf
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 25 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC23D120H6X1SA1 SIDC23D120H6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 35A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 35 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC23D60E6X1SA4 SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8
Виробник: Infineon Technologies
Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
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SIDC23D60E6YX1SA1 SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8
Виробник: Infineon Technologies
Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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FF2000XTR17IE5BPSA1 Infineon-FF2000XTR17IE5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d0189f82d1e0951fd
FF2000XTR17IE5BPSA1
Виробник: Infineon Technologies
Description: PP IHM I
Packaging: Tray
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+82878.41 грн
В кошику  од. на суму  грн.
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