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IRF7465PBF IRF7465PBF Infineon Technologies irf7465pbf.pdf?fileId=5546d462533600a4015355fef2681c08 Description: MOSFET N-CH 150V 1.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
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TLE4973RE35S5S0010XUMA1 TLE4973RE35S5S0010XUMA1 Infineon Technologies Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-VSON-6-4
Number of Channels: 1
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TLE4973RE35S5S0010XUMA1 TLE4973RE35S5S0010XUMA1 Infineon Technologies Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-VSON-6-4
Number of Channels: 1
на замовлення 4368 шт:
термін постачання 21-31 дні (днів)
2+227.85 грн
5+196.47 грн
10+187.68 грн
25+166.36 грн
50+159.69 грн
100+153.58 грн
500+138.96 грн
1000+134.95 грн
Мінімальне замовлення: 2
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CY7C1315KV18-250BZCT CY7C1315KV18-250BZCT Infineon Technologies download Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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IRLU3103PBF IRLU3103PBF Infineon Technologies irlr3103pbf.pdf?fileId=5546d462533600a40153566ce4382684 Description: MOSFET N-CH 30V 55A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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IRLU3705ZPBF IRLU3705ZPBF Infineon Technologies irlr3705zpbf.pdf?fileId=5546d462533600a40153566d2d17269d Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 42A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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IRGIB7B60KDPBF IRGIB7B60KDPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 600V 12A 39W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/140ns
Switching Energy: 160µJ (on), 160µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 29 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 39 W
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IRFIB41N15DPBF IRFIB41N15DPBF Infineon Technologies irfb41n15dpbf.pdf?fileId=5546d462533600a401535615d3b61e16 description Description: MOSFET N-CH 150V 41A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V
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IRGIB6B60KDPBF IRGIB6B60KDPBF Infineon Technologies irgib6b60kdpbf.pdf?fileId=5546d462533600a40153565259dd2434 Description: IGBT NPT 600V 11A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 38 W
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IRSM505-024DA IRSM505-024DA Infineon Technologies irsm505-024.pdf Description: IC HALF BRIDGE DRIVER 1.6A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
на замовлення 11760 шт:
термін постачання 21-31 дні (днів)
76+302.47 грн
Мінімальне замовлення: 76
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IRSM505-024DA IRSM505-024DA Infineon Technologies irsm505-024.pdf Description: IC HALF BRIDGE DRIVER 1.6A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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IRSM505-024DA2 Infineon Technologies irsm505-024.pdf Description: IC HALF BRIDGE DRIVER 1.6A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
на замовлення 5520 шт:
термін постачання 21-31 дні (днів)
76+302.47 грн
Мінімальне замовлення: 76
В кошику  од. на суму  грн.
IRSM505-024DA2 Infineon Technologies irsm505-024.pdf Description: IC HALF BRIDGE DRIVER 1.6A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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IRSM505-024PA IRSM505-024PA Infineon Technologies irsm505-024.pdf Description: IC HALF BRIDGE DRIVER 1.6A 23SOP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
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IRSM505-025DA2 Infineon Technologies irsm505-025.pdf Description: IC HALF BRIDGE DRIVER 1.5A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 3Ohm
Applications: AC Motors
Current - Output / Channel: 1.5A
Current - Peak Output: 11A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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IRSM505-035DA IRSM505-035DA Infineon Technologies irsm505-035.pdf Description: IC HALF BRIDGE DRIVER 2.1A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 2.1A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
на замовлення 1680 шт:
термін постачання 21-31 дні (днів)
60+384.56 грн
Мінімальне замовлення: 60
В кошику  од. на суму  грн.
IRSM505-035DA IRSM505-035DA Infineon Technologies irsm505-035.pdf Description: IC HALF BRIDGE DRIVER 2.1A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 2.1A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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IRSM505-065DA2 Infineon Technologies irsm505-065.pdf Description: IC HALF BRIDGE DRIVER 2.6A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1Ohm
Applications: AC Motors
Current - Output / Channel: 2.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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FS33MR12W1M1HPB11BPSA1 FS33MR12W1M1HPB11BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+6657.58 грн
30+5200.59 грн
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CY7C1361C-100BZXE CY7C1361C-100BZXE Infineon Technologies Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC SRAM 9MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
1+958.23 грн
10+854.85 грн
25+835.43 грн
40+779.81 грн
136+686.48 грн
272+652.41 грн
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CY7C1360C-200AJXC CY7C1360C-200AJXC Infineon Technologies download Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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CY7C1360C-200AXC CY7C1360C-200AXC Infineon Technologies download Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
на замовлення 358 шт:
термін постачання 21-31 дні (днів)
1+774.84 грн
10+691.79 грн
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FP75R12N3T7B81BPSA1 Infineon Technologies Infineon-FP75R12N3T7-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c80027ecd01809858fce53ae1 Description: LOW POWER ECONO AG-ECONO3B-731
Packaging: Tray
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+14044.74 грн
10+12667.50 грн
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S25FL512SAGBHID10 S25FL512SAGBHID10 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 3380 шт:
термін постачання 21-31 дні (днів)
1+553.34 грн
10+494.85 грн
25+479.64 грн
40+442.81 грн
80+432.09 грн
338+423.23 грн
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S25FL512SAGMFIG11 S25FL512SAGMFIG11 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 161 шт:
термін постачання 21-31 дні (днів)
1+711.33 грн
10+636.36 грн
47+603.36 грн
94+552.45 грн
141+544.44 грн
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S25FL512SAGBHID13 S25FL512SAGBHID13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+541.77 грн
Мінімальне замовлення: 2500
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S25FL512SAGBHID13 S25FL512SAGBHID13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 4988 шт:
термін постачання 21-31 дні (днів)
1+711.33 грн
10+636.36 грн
25+616.82 грн
50+565.00 грн
100+551.23 грн
250+533.21 грн
500+511.28 грн
1000+498.31 грн
В кошику  од. на суму  грн.
S25FL512SDSMFM010 S25FL512SDSMFM010 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
1+1047.94 грн
10+936.73 грн
25+907.48 грн
40+837.63 грн
В кошику  од. на суму  грн.
CYW89072BRFB5G CYW89072BRFB5G Infineon Technologies Description: BLUE TOOTH AUTO
Packaging: Tray
товару немає в наявності
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CYW89273CUBGT CYW89273CUBGT Infineon Technologies Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
товару немає в наявності
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CYW89335L2CUBGT Infineon Technologies Description: SOC WIFI BTE AUTO 145WLCSP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
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CYW89459CUBGT Infineon Technologies Description: Automotive WiFi/Bluetooth
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYW89342CRFB4GT Infineon Technologies Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
Package / Case: 248-BGA, FCBGA
Mounting Type: Surface Mount
Type: TxRx + MCU
Supplier Device Package: 248-FCFBGA (13x13)
RF Family/Standard: Bluetooth, WiFi
товару немає в наявності
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CY62157GE30-45BVXIT Infineon Technologies Infineon-CY62157G_CY62157GE_MoBL_8-Mbit_(512K_16-bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee95538723e Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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XE164F96F66LACFXQMA1 XE164F96F66LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
товару немає в наявності
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XE167F48F66LACFXQMA1 XE167F48F66LACFXQMA1 Infineon Technologies Infineon-XE167x-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc1cf5bc857fc Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
товару немає в наявності
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BSR302NL6327HTSA1 BSR302NL6327HTSA1 Infineon Technologies BSR302N.pdf Description: MOSFET N-CH 30V 3.7A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.79 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IM69D130V11XTSA2 Infineon Technologies Description: MICROPHONES_DIFFERENTIAT
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
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IM69D130V11XTSA2 Infineon Technologies Description: MICROPHONES_DIFFERENTIAT
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
на замовлення 978 шт:
термін постачання 21-31 дні (днів)
3+137.34 грн
10+110.01 грн
25+101.68 грн
50+89.74 грн
100+84.24 грн
250+78.05 грн
500+71.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRG4BC20UDPBF IRG4BC20UDPBF Infineon Technologies IRG4BC20UDPbF.pdf description Description: IGBT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 39ns/93ns
Switching Energy: 160µJ (on), 130µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
товару немає в наявності
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IRAMX30TP60A Infineon Technologies IRAMX30TP60A.pdf Description: IC MOD PWR HYBRID 600V 30A MOTOR
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 600 V
товару немає в наявності
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CY14B101PA-SFXIT CY14B101PA-SFXIT Infineon Technologies Infineon-CY14C101PA_CY14B101PA_CY14E101PA_1-Mbit_(128K_x_8)_Serial_(SPI)_nvSRAM_with_Real-Time_Clock-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfd3223457&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Description: IC NVSRAM 1MBIT SPI 40MHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+673.85 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY14B101PA-SFXIT CY14B101PA-SFXIT Infineon Technologies Infineon-CY14C101PA_CY14B101PA_CY14E101PA_1-Mbit_(128K_x_8)_Serial_(SPI)_nvSRAM_with_Real-Time_Clock-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfd3223457&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Description: IC NVSRAM 1MBIT SPI 40MHZ 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 2723 шт:
термін постачання 21-31 дні (днів)
1+729.59 грн
10+648.90 грн
В кошику  од. на суму  грн.
CY14B101NA-ZS25XI CY14B101NA-ZS25XI Infineon Technologies Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+1837.07 грн
10+1637.69 грн
25+1585.58 грн
50+1451.32 грн
135+1399.52 грн
270+1364.07 грн
В кошику  од. на суму  грн.
CY14V101QS-BK108XI CY14V101QS-BK108XI Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 24FBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
1+1220.21 грн
10+1042.92 грн
25+994.51 грн
40+910.79 грн
80+878.55 грн
230+831.54 грн
В кошику  од. на суму  грн.
CY14V101QS-BK108XQ CY14V101QS-BK108XQ Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 24FBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
1+949.49 грн
10+811.58 грн
25+773.88 грн
40+708.74 грн
80+698.54 грн
В кошику  од. на суму  грн.
CY14V101QS-SF108XQ CY14V101QS-SF108XQ Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 368 шт:
термін постачання 21-31 дні (днів)
1+1093.98 грн
10+935.28 грн
25+891.82 грн
50+812.75 грн
В кошику  од. на суму  грн.
CY14V101QS-SE108XIT CY14V101QS-SE108XIT Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 895 шт:
термін постачання 21-31 дні (днів)
1+1144.79 грн
10+1020.52 грн
25+1006.62 грн
50+932.81 грн
100+817.48 грн
250+782.43 грн
500+764.60 грн
В кошику  од. на суму  грн.
IPB720P15LMATMA1 IPB720P15LMATMA1 Infineon Technologies Infineon-IPB720P15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9d41c3b4f5e Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 37A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 75 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+141.10 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB720P15LMATMA1 IPB720P15LMATMA1 Infineon Technologies Infineon-IPB720P15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9d41c3b4f5e Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 37A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 75 V
на замовлення 1584 шт:
термін постачання 21-31 дні (днів)
1+319.94 грн
10+232.40 грн
100+170.71 грн
500+156.08 грн
В кошику  од. на суму  грн.
IPL60R115CFD7AUMA1 IPL60R115CFD7AUMA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Supplier Device Package: PG-VSON-4
товару немає в наявності
В кошику  од. на суму  грн.
IPL60R115CFD7AUMA1 IPL60R115CFD7AUMA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Supplier Device Package: PG-VSON-4
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)
2+301.68 грн
10+206.64 грн
100+147.19 грн
500+125.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF7807VPBF IRF7807VPBF Infineon Technologies irf7807vpbf.pdf?fileId=5546d462533600a4015356084a061ce2 Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
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T2563N80TOHXPSA1 T2563N80TOHXPSA1 Infineon Technologies DS_T2563N_11_0.pdf?fileId=db3a3043243b5f1701249621aeef1662 Description: SCR MODULE 3600A DO-200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 120°C
Structure: Single
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3330 A
Current - On State (It (RMS)) (Max): 3600 A
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T2563N80TS15XPSA1 Infineon Technologies Description: SCR MODULE
Packaging: Bulk
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: 120°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3330 A
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8 kV
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T2563N85TS12XOSA1 Infineon Technologies Description: SCR MODULE
Packaging: Bulk
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: 120°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3330 A
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8.5 kV
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IR21364SPBF IR21364SPBF Infineon Technologies IR21364%28S%2CJ%29PbF.pdf Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IPB60R160P6ATMA1 IPB60R160P6ATMA1 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: MOSFET N-CH 600V 23.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+100.65 грн
2000+96.34 грн
Мінімальне замовлення: 1000
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IPB60R160P6ATMA1 IPB60R160P6ATMA1 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: MOSFET N-CH 600V 23.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 2219 шт:
термін постачання 21-31 дні (днів)
2+259.60 грн
10+179.81 грн
100+130.61 грн
500+98.23 грн
Мінімальне замовлення: 2
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POWERDRILL2GOTOBO1 POWERDRILL2GOTOBO1 Infineon Technologies Description: CONTROL TRIGGER 2GO
Packaging: Bulk
For Use With/Related Products: 2GO, Shield2Go
Accessory Type: Magnet Holder
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+1960.91 грн
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IRF7465PBF irf7465pbf.pdf?fileId=5546d462533600a4015355fef2681c08
IRF7465PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 1.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
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TLE4973RE35S5S0010XUMA1 Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b
TLE4973RE35S5S0010XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-VSON-6-4
Number of Channels: 1
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TLE4973RE35S5S0010XUMA1 Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b
TLE4973RE35S5S0010XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-VSON-6-4
Number of Channels: 1
на замовлення 4368 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+227.85 грн
5+196.47 грн
10+187.68 грн
25+166.36 грн
50+159.69 грн
100+153.58 грн
500+138.96 грн
1000+134.95 грн
Мінімальне замовлення: 2
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CY7C1315KV18-250BZCT download
CY7C1315KV18-250BZCT
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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IRLU3103PBF irlr3103pbf.pdf?fileId=5546d462533600a40153566ce4382684
IRLU3103PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 55A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 33A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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IRLU3705ZPBF irlr3705zpbf.pdf?fileId=5546d462533600a40153566d2d17269d
IRLU3705ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 42A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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IRGIB7B60KDPBF fundamentals-of-power-semiconductors
IRGIB7B60KDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 12A 39W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/140ns
Switching Energy: 160µJ (on), 160µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 29 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 39 W
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IRFIB41N15DPBF description irfb41n15dpbf.pdf?fileId=5546d462533600a401535615d3b61e16
IRFIB41N15DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 41A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V
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IRGIB6B60KDPBF irgib6b60kdpbf.pdf?fileId=5546d462533600a40153565259dd2434
IRGIB6B60KDPBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 11A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 38 W
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IRSM505-024DA irsm505-024.pdf
IRSM505-024DA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.6A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
на замовлення 11760 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
76+302.47 грн
Мінімальне замовлення: 76
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IRSM505-024DA irsm505-024.pdf
IRSM505-024DA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.6A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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IRSM505-024DA2 irsm505-024.pdf
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.6A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
на замовлення 5520 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
76+302.47 грн
Мінімальне замовлення: 76
В кошику  од. на суму  грн.
IRSM505-024DA2 irsm505-024.pdf
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.6A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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IRSM505-024PA irsm505-024.pdf
IRSM505-024PA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.6A 23SOP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
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IRSM505-025DA2 irsm505-025.pdf
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.5A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 3Ohm
Applications: AC Motors
Current - Output / Channel: 1.5A
Current - Peak Output: 11A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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IRSM505-035DA irsm505-035.pdf
IRSM505-035DA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2.1A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 2.1A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
на замовлення 1680 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
60+384.56 грн
Мінімальне замовлення: 60
В кошику  од. на суму  грн.
IRSM505-035DA irsm505-035.pdf
IRSM505-035DA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2.1A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 2.1A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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IRSM505-065DA2 irsm505-065.pdf
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2.6A 23DIP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1Ohm
Applications: AC Motors
Current - Output / Channel: 2.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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FS33MR12W1M1HPB11BPSA1
FS33MR12W1M1HPB11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6657.58 грн
30+5200.59 грн
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CY7C1361C-100BZXE Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY7C1361C-100BZXE
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
на замовлення 272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+958.23 грн
10+854.85 грн
25+835.43 грн
40+779.81 грн
136+686.48 грн
272+652.41 грн
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CY7C1360C-200AJXC download
CY7C1360C-200AJXC
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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CY7C1360C-200AXC download
CY7C1360C-200AXC
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
на замовлення 358 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+774.84 грн
10+691.79 грн
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FP75R12N3T7B81BPSA1 Infineon-FP75R12N3T7-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c80027ecd01809858fce53ae1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-731
Packaging: Tray
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+14044.74 грн
10+12667.50 грн
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S25FL512SAGBHID10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGBHID10
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 3380 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+553.34 грн
10+494.85 грн
25+479.64 грн
40+442.81 грн
80+432.09 грн
338+423.23 грн
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S25FL512SAGMFIG11 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGMFIG11
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 161 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+711.33 грн
10+636.36 грн
47+603.36 грн
94+552.45 грн
141+544.44 грн
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S25FL512SAGBHID13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGBHID13
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+541.77 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
S25FL512SAGBHID13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGBHID13
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 4988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+711.33 грн
10+636.36 грн
25+616.82 грн
50+565.00 грн
100+551.23 грн
250+533.21 грн
500+511.28 грн
1000+498.31 грн
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S25FL512SDSMFM010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SDSMFM010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1047.94 грн
10+936.73 грн
25+907.48 грн
40+837.63 грн
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CYW89072BRFB5G
CYW89072BRFB5G
Виробник: Infineon Technologies
Description: BLUE TOOTH AUTO
Packaging: Tray
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CYW89273CUBGT
CYW89273CUBGT
Виробник: Infineon Technologies
Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
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CYW89335L2CUBGT
Виробник: Infineon Technologies
Description: SOC WIFI BTE AUTO 145WLCSP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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CYW89459CUBGT
Виробник: Infineon Technologies
Description: Automotive WiFi/Bluetooth
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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CYW89342CRFB4GT
Виробник: Infineon Technologies
Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
Package / Case: 248-BGA, FCBGA
Mounting Type: Surface Mount
Type: TxRx + MCU
Supplier Device Package: 248-FCFBGA (13x13)
RF Family/Standard: Bluetooth, WiFi
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CY62157GE30-45BVXIT Infineon-CY62157G_CY62157GE_MoBL_8-Mbit_(512K_16-bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee95538723e
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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XE164F96F66LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164F96F66LACFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE167F48F66LACFXQMA1 Infineon-XE167x-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc1cf5bc857fc
XE167F48F66LACFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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BSR302NL6327HTSA1 BSR302N.pdf
BSR302NL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 3.7A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+8.79 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IM69D130V11XTSA2
Виробник: Infineon Technologies
Description: MICROPHONES_DIFFERENTIAT
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
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IM69D130V11XTSA2
Виробник: Infineon Technologies
Description: MICROPHONES_DIFFERENTIAT
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
на замовлення 978 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.34 грн
10+110.01 грн
25+101.68 грн
50+89.74 грн
100+84.24 грн
250+78.05 грн
500+71.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRG4BC20UDPBF description IRG4BC20UDPbF.pdf
IRG4BC20UDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 39ns/93ns
Switching Energy: 160µJ (on), 130µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
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IRAMX30TP60A IRAMX30TP60A.pdf
Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 30A MOTOR
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 600 V
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CY14B101PA-SFXIT Infineon-CY14C101PA_CY14B101PA_CY14E101PA_1-Mbit_(128K_x_8)_Serial_(SPI)_nvSRAM_with_Real-Time_Clock-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfd3223457&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
CY14B101PA-SFXIT
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 40MHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+673.85 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY14B101PA-SFXIT Infineon-CY14C101PA_CY14B101PA_CY14E101PA_1-Mbit_(128K_x_8)_Serial_(SPI)_nvSRAM_with_Real-Time_Clock-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfd3223457&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
CY14B101PA-SFXIT
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 40MHZ 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 2723 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+729.59 грн
10+648.90 грн
В кошику  од. на суму  грн.
CY14B101NA-ZS25XI Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B101NA-ZS25XI
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1837.07 грн
10+1637.69 грн
25+1585.58 грн
50+1451.32 грн
135+1399.52 грн
270+1364.07 грн
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CY14V101QS-BK108XI Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-BK108XI
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 24FBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1220.21 грн
10+1042.92 грн
25+994.51 грн
40+910.79 грн
80+878.55 грн
230+831.54 грн
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CY14V101QS-BK108XQ Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-BK108XQ
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 24FBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+949.49 грн
10+811.58 грн
25+773.88 грн
40+708.74 грн
80+698.54 грн
В кошику  од. на суму  грн.
CY14V101QS-SF108XQ Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-SF108XQ
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 368 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1093.98 грн
10+935.28 грн
25+891.82 грн
50+812.75 грн
В кошику  од. на суму  грн.
CY14V101QS-SE108XIT Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-SE108XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 895 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1144.79 грн
10+1020.52 грн
25+1006.62 грн
50+932.81 грн
100+817.48 грн
250+782.43 грн
500+764.60 грн
В кошику  од. на суму  грн.
IPB720P15LMATMA1 Infineon-IPB720P15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9d41c3b4f5e
IPB720P15LMATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 37A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 75 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+141.10 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB720P15LMATMA1 Infineon-IPB720P15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9d41c3b4f5e
IPB720P15LMATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 37A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 75 V
на замовлення 1584 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+319.94 грн
10+232.40 грн
100+170.71 грн
500+156.08 грн
В кошику  од. на суму  грн.
IPL60R115CFD7AUMA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPL60R115CFD7AUMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Supplier Device Package: PG-VSON-4
товару немає в наявності
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IPL60R115CFD7AUMA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPL60R115CFD7AUMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Supplier Device Package: PG-VSON-4
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+301.68 грн
10+206.64 грн
100+147.19 грн
500+125.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF7807VPBF irf7807vpbf.pdf?fileId=5546d462533600a4015356084a061ce2
IRF7807VPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
товару немає в наявності
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T2563N80TOHXPSA1 DS_T2563N_11_0.pdf?fileId=db3a3043243b5f1701249621aeef1662
T2563N80TOHXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 3600A DO-200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 120°C
Structure: Single
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3330 A
Current - On State (It (RMS)) (Max): 3600 A
товару немає в наявності
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T2563N80TS15XPSA1
Виробник: Infineon Technologies
Description: SCR MODULE
Packaging: Bulk
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: 120°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3330 A
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8 kV
товару немає в наявності
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T2563N85TS12XOSA1
Виробник: Infineon Technologies
Description: SCR MODULE
Packaging: Bulk
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: 120°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3330 A
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8.5 kV
товару немає в наявності
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IR21364SPBF IR21364%28S%2CJ%29PbF.pdf
IR21364SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
товару немає в наявності
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IPB60R160P6ATMA1 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPB60R160P6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+100.65 грн
2000+96.34 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IPB60R160P6ATMA1 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPB60R160P6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
на замовлення 2219 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+259.60 грн
10+179.81 грн
100+130.61 грн
500+98.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
POWERDRILL2GOTOBO1
POWERDRILL2GOTOBO1
Виробник: Infineon Technologies
Description: CONTROL TRIGGER 2GO
Packaging: Bulk
For Use With/Related Products: 2GO, Shield2Go
Accessory Type: Magnet Holder
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1960.91 грн
В кошику  од. на суму  грн.
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