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2EDN8524GXTMA1 2EDN8524GXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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2EDN8524GXTMA1 2EDN8524GXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
на замовлення 3380 шт:
термін постачання 21-31 дні (днів)
5+66.69 грн
10+46.02 грн
25+41.53 грн
100+34.26 грн
250+32.02 грн
500+30.67 грн
1000+29.07 грн
Мінімальне замовлення: 5
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EVAL2500WPFCGANATOBO1 EVAL2500WPFCGANATOBO1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: 2500W FULL BRIDGE TOTEM
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2EDN7524R
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+38560.13 грн
В кошику  од. на суму  грн.
2EDN7434BXTSA1 Infineon Technologies Description: DRIVER IC PG-SOT23-6
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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2EDN7434BXTSA1 Infineon Technologies Description: DRIVER IC PG-SOT23-6
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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AUIRFB3806 AUIRFB3806 Infineon Technologies AUIRFB3806_Web.pdf Description: MOSFET N-CH 60V 43A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
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IRFB42N20DPBF IRFB42N20DPBF Infineon Technologies irfb42n20dpbf.pdf?fileId=5546d462533600a40153561606c81e27 Description: MOSFET N-CH 200V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
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IRFB23N20DPBF IRFB23N20DPBF Infineon Technologies irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143 Description: MOSFET N-CH 200V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
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BSM100GB60DLCHOSA1 BSM100GB60DLCHOSA1 Infineon Technologies Infineon-BSM100GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349b3960c4 Description: IGBT MOD 600V 130A 445W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 445 W
Current - Collector Cutoff (Max): 500 µA
на замовлення 1763 шт:
термін постачання 21-31 дні (днів)
5+4940.55 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSM100GB60DLCHOSA1 BSM100GB60DLCHOSA1 Infineon Technologies Infineon-BSM100GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349b3960c4 Description: IGBT MOD 600V 130A 445W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 445 W
Current - Collector Cutoff (Max): 500 µA
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BSM100GB120DLCHOSA1 Infineon Technologies INFNS11478-1.pdf?t.download=true&u=5oefqw Description: IGBT MOD 1200V 100A 830W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
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BSM100GB170DLCHOSA1 Infineon Technologies Description: IGBT MOD 1700V 200A 960W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
3+9923.91 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
D1721NH90TAOSA1 D1721NH90TAOSA1 Infineon Technologies Infineon-D1721NH90T-DS-v04_00-DE.pdf?fileId=5546d46255dd933d0155fd86888d3ac4 Description: DIODE GEN PURP 2160A D10026K-1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2160A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: 0°C ~ 140°C
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
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DD340N18SHPSA1 DD340N18SHPSA1 Infineon Technologies DD340N18S.pdf Description: DIODE MOD GP 1800V BGPB50SB
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
4+6427.55 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRG4BC30WPBF IRG4BC30WPBF Infineon Technologies irg4bc30wpbf.pdf?fileId=5546d462533600a40153564014f2228d description Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 25ns/99ns
Switching Energy: 130µJ (on), 130µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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IAUC120N06S5L011ATMA1 IAUC120N06S5L011ATMA1 Infineon Technologies Infineon-IAUC120N06S5L011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fc1b680d712ef Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3653 шт:
термін постачання 21-31 дні (днів)
2+256.43 грн
10+161.23 грн
100+112.59 грн
500+86.19 грн
1000+79.93 грн
2000+77.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUC120N06S5N032ATMA1 IAUC120N06S5N032ATMA1 Infineon Technologies Infineon-IAUC120N06S5N032-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183a8692a6a2df6 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9800 шт:
термін постачання 21-31 дні (днів)
3+138.93 грн
10+85.39 грн
100+57.61 грн
500+42.89 грн
1000+39.30 грн
2000+36.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IAUC120N06S5L022ATMA1 IAUC120N06S5L022ATMA1 Infineon Technologies Infineon-IAUC120N06S5L022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275d5cd0ef1 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1429 шт:
термін постачання 21-31 дні (днів)
2+164.34 грн
10+101.52 грн
100+69.13 грн
500+51.86 грн
1000+47.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25FL128SAGNFI011 S25FL128SAGNFI011 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 1512 шт:
термін постачання 21-31 дні (днів)
1+333.43 грн
10+285.15 грн
25+271.94 грн
50+246.24 грн
100+237.57 грн
250+226.55 грн
500+214.95 грн
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S25FL128SAGNFM000 S25FL128SAGNFM000 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 135 шт:
термін постачання 21-31 дні (днів)
1+538.26 грн
10+460.60 грн
25+439.31 грн
40+402.36 грн
80+388.16 грн
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AUIRF7343QTR AUIRF7343QTR Infineon Technologies auirf7343q.pdf?fileId=5546d462533600a4015355ad45c613e0 Description: MOSFET N/P-CH 55V 4.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
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AUIRF7343QTR AUIRF7343QTR Infineon Technologies auirf7343q.pdf?fileId=5546d462533600a4015355ad45c613e0 Description: MOSFET N/P-CH 55V 4.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
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IPD60R600E6ATMA1 IPD60R600E6ATMA1 Infineon Technologies Infineon-IPD60R600E6-DS-v02_02-EN.pdf?fileId=db3a30433f1b26e8013f1f009327039e Description: MOSFET N-CH 600V 7.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IRG4BC30KD-SPBF IRG4BC30KD-SPBF Infineon Technologies irg4bc30kd-spbf.pdf?fileId=5546d462533600a40153563fcdc8227b description Description: IGBT 600V 28A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 100 W
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IRG4BC30FDPBF IRG4BC30FDPBF Infineon Technologies irg4bc30fdpbf.pdf?fileId=5546d462533600a40153563fa7ab2271 description Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 42ns/230ns
Switching Energy: 630µJ (on), 1.39mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
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IRG4BC30F-SPBF IRG4BC30F-SPBF Infineon Technologies IRG4BC30F.pdf Description: IGBT 600V 31A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
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IRG4BC30FD-SPBF IRG4BC30FD-SPBF Infineon Technologies irg4bc30fd-spbf.pdf?fileId=5546d462533600a40153563fafdd2273 Description: IGBT 600V 31A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 42ns/230ns
Switching Energy: 630µJ (on), 1.39mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
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IRG4PC40KPBF IRG4PC40KPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 600V 42A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 620µJ (on), 330µJ (off)
Test Condition: 480V, 25A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 160 W
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IRG4PC40FDPBF IRG4PC40FDPBF Infineon Technologies irg4pc40fdpbf.pdf?fileId=5546d462533600a40153564401d422d2 Description: IGBT 600V 49A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 63ns/230ns
Switching Energy: 950µJ (on), 2.01mJ (off)
Test Condition: 480V, 27A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 196 A
Power - Max: 160 W
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T920N06TOFXPSA1 T920N06TOFXPSA1 Infineon Technologies Infineon-T920N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128634e0db252f7 Description: SCR MODULE 600V 1500A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 925 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 600 V
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S29GL512S10FHI010 S29GL512S10FHI010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Verified
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
1+788.33 грн
10+673.51 грн
25+642.26 грн
40+588.21 грн
180+543.98 грн
В кошику  од. на суму  грн.
IPP018N10N5AKSA1 IPP018N10N5AKSA1 Infineon Technologies Infineon-IPP018N10N5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185e4544cf66df7 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+534.29 грн
50+276.30 грн
100+253.37 грн
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IPP018N10N5XKSA1 IPP018N10N5XKSA1 Infineon Technologies Infineon-IPP018N10N5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185e4544cf66df7 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
1+530.32 грн
50+274.57 грн
100+251.79 грн
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IPB018N10N5ATMA1 IPB018N10N5ATMA1 Infineon Technologies Infineon-IPB018N10N5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185e4420f246df4 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
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IPB018N10N5ATMA1 IPB018N10N5ATMA1 Infineon Technologies Infineon-IPB018N10N5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185e4420f246df4 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
на замовлення 254 шт:
термін постачання 21-31 дні (днів)
1+608.12 грн
10+398.76 грн
100+293.09 грн
В кошику  од. на суму  грн.
IR2132PBF IR2132PBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 3793 шт:
термін постачання 21-31 дні (днів)
36+588.41 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
IR2132PBF IR2132PBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IR2133JPBF IR2133JPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IR35221MTRPBF IR35221MTRPBF Infineon Technologies Infineon-IR35221MTRPBF-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e46b88f9c06f1&ack=t Description: IC CTRL XPHASE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 7mA
Supplier Device Package: 32-MLPQ (5x5)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+257.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IR35221MTRPBF IR35221MTRPBF Infineon Technologies Infineon-IR35221MTRPBF-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e46b88f9c06f1&ack=t Description: IC CTRL XPHASE 40QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 7mA
Supplier Device Package: 32-MLPQ (5x5)
на замовлення 7217 шт:
термін постачання 21-31 дні (днів)
1+458.08 грн
10+338.52 грн
25+312.74 грн
100+266.95 грн
250+254.30 грн
500+246.68 грн
1000+236.46 грн
В кошику  од. на суму  грн.
CY7C1019DV33-10VXIT CY7C1019DV33-10VXIT Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019DV33-10VXIT CY7C1019DV33-10VXIT Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
1+323.11 грн
10+289.51 грн
25+280.87 грн
50+257.46 грн
100+251.34 грн
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CY7C1019DV33-10BVXI CY7C1019DV33-10BVXI Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1605 шт:
термін постачання 21-31 дні (днів)
2+288.98 грн
10+246.85 грн
25+235.40 грн
40+215.59 грн
80+207.99 грн
230+196.88 грн
480+186.39 грн
960+179.78 грн
Мінімальне замовлення: 2
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KP214E2611XTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+242.17 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
KP214E2611XTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+500.95 грн
10+361.83 грн
25+321.67 грн
50+286.78 грн
100+279.22 грн
500+233.94 грн
В кошику  од. на суму  грн.
IPP057N08N3GXKSA1 IPP057N08N3GXKSA1 Infineon Technologies Infineon-IPP057N08N3-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304317a748360117cf0cf5951d06 Description: MOSFET N-CH 80V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
на замовлення 1107 шт:
термін постачання 21-31 дні (днів)
2+249.28 грн
50+120.99 грн
100+109.41 грн
500+83.62 грн
1000+77.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDWD40E65E7XKSA1 IDWD40E65E7XKSA1 Infineon Technologies Infineon-IDWD40E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59deb058ed Description: DIODE STD 650V 50A PGTO24722
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 89 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 166 шт:
термін постачання 21-31 дні (днів)
2+292.95 грн
30+154.94 грн
120+126.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS2112SPBF IRS2112SPBF Infineon Technologies irs2112pbf.pdf?fileId=5546d462533600a401535676702827b5 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 1640 шт:
термін постачання 21-31 дні (днів)
166+133.57 грн
Мінімальне замовлення: 166
В кошику  од. на суму  грн.
CY9AFAA1NPMC-G-UNE2 CY9AFAA1NPMC-G-UNE2 Infineon Technologies Infineon-CY9AAA0N_SERIES_32_BIT_Arm_Cortex_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0a9a66657&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 84
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
1+691.48 грн
10+518.25 грн
25+481.26 грн
90+415.89 грн
270+393.97 грн
450+385.86 грн
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AUIPS1031STRL AUIPS1031STRL Infineon Technologies AUIPS1031(S,R).pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
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AUIPS1041RTRL AUIPS1041RTRL Infineon Technologies AUIPS1041(L,R)42G.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: D-PAK (TO-252AA)
Fault Protection: Current Limiting (Fixed), Over Temperature
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AUIPS6021STRL AUIPS6021STRL Infineon Technologies AUIPS6021%28S%2CR%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 24mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIPS6031STRL AUIPS6031STRL Infineon Technologies AUIPS6031%28S%2CR%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.1A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIPS1011 AUIPS1011 Infineon Technologies AUIPS1011(S)(R).pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 10mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 18A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Fixed), Over Temperature
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AUIPS1031 AUIPS1031 Infineon Technologies AUIPS1031(S,R).pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.5A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Fixed), Over Temperature
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AUIPS1031R AUIPS1031R Infineon Technologies AUIPS1031(S,R).pdf Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: D-Pak
Fault Protection: Current Limiting (Fixed), Over Temperature
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AUIPS2031R AUIPS2031R Infineon Technologies Infineon-AUIPS2031R-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aae1488334c5c Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D-Pak
Fault Protection: Current Limiting (Fixed), Over Temperature
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IR2302PBF IR2302PBF Infineon Technologies ir2302.pdf?fileId=5546d462533600a4015355c988b216de Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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CY7C09359AV-9AXC CY7C09359AV-9AXC Infineon Technologies CY7C09349AV, 59.pdf Description: IC SRAM 144K PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 144Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 67 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 9 ns
Memory Organization: 8K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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SMBT3904SH6327XTSA1 SMBT3904SH6327XTSA1 Infineon Technologies smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191 Description: TRANS 2NPN 40V 0.2A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT363-PO
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2EDN8524GXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8524GXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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2EDN8524GXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8524GXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
на замовлення 3380 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+66.69 грн
10+46.02 грн
25+41.53 грн
100+34.26 грн
250+32.02 грн
500+30.67 грн
1000+29.07 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
EVAL2500WPFCGANATOBO1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
EVAL2500WPFCGANATOBO1
Виробник: Infineon Technologies
Description: 2500W FULL BRIDGE TOTEM
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2EDN7524R
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+38560.13 грн
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2EDN7434BXTSA1
Виробник: Infineon Technologies
Description: DRIVER IC PG-SOT23-6
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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2EDN7434BXTSA1
Виробник: Infineon Technologies
Description: DRIVER IC PG-SOT23-6
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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AUIRFB3806 AUIRFB3806_Web.pdf
AUIRFB3806
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 43A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
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IRFB42N20DPBF irfb42n20dpbf.pdf?fileId=5546d462533600a40153561606c81e27
IRFB42N20DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
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IRFB23N20DPBF irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143
IRFB23N20DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
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BSM100GB60DLCHOSA1 Infineon-BSM100GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349b3960c4
BSM100GB60DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 600V 130A 445W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 445 W
Current - Collector Cutoff (Max): 500 µA
на замовлення 1763 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+4940.55 грн
Мінімальне замовлення: 5
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BSM100GB60DLCHOSA1 Infineon-BSM100GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349b3960c4
BSM100GB60DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 600V 130A 445W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 445 W
Current - Collector Cutoff (Max): 500 µA
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BSM100GB120DLCHOSA1 INFNS11478-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 830W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
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BSM100GB170DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 200A 960W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+9923.91 грн
Мінімальне замовлення: 3
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D1721NH90TAOSA1 Infineon-D1721NH90T-DS-v04_00-DE.pdf?fileId=5546d46255dd933d0155fd86888d3ac4
D1721NH90TAOSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2160A D10026K-1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2160A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: 0°C ~ 140°C
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
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DD340N18SHPSA1 DD340N18S.pdf
DD340N18SHPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 1800V BGPB50SB
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+6427.55 грн
Мінімальне замовлення: 4
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IRG4BC30WPBF description irg4bc30wpbf.pdf?fileId=5546d462533600a40153564014f2228d
IRG4BC30WPBF
Виробник: Infineon Technologies
Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 25ns/99ns
Switching Energy: 130µJ (on), 130µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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IAUC120N06S5L011ATMA1 Infineon-IAUC120N06S5L011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fc1b680d712ef
IAUC120N06S5L011ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3653 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+256.43 грн
10+161.23 грн
100+112.59 грн
500+86.19 грн
1000+79.93 грн
2000+77.84 грн
Мінімальне замовлення: 2
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IAUC120N06S5N032ATMA1 Infineon-IAUC120N06S5N032-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183a8692a6a2df6
IAUC120N06S5N032ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+138.93 грн
10+85.39 грн
100+57.61 грн
500+42.89 грн
1000+39.30 грн
2000+36.28 грн
Мінімальне замовлення: 3
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IAUC120N06S5L022ATMA1 Infineon-IAUC120N06S5L022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275d5cd0ef1
IAUC120N06S5L022ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1429 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+164.34 грн
10+101.52 грн
100+69.13 грн
500+51.86 грн
1000+47.67 грн
Мінімальне замовлення: 2
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S25FL128SAGNFI011 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFI011
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 1512 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+333.43 грн
10+285.15 грн
25+271.94 грн
50+246.24 грн
100+237.57 грн
250+226.55 грн
500+214.95 грн
В кошику  од. на суму  грн.
S25FL128SAGNFM000 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFM000
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 135 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+538.26 грн
10+460.60 грн
25+439.31 грн
40+402.36 грн
80+388.16 грн
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AUIRF7343QTR auirf7343q.pdf?fileId=5546d462533600a4015355ad45c613e0
AUIRF7343QTR
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 55V 4.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
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AUIRF7343QTR auirf7343q.pdf?fileId=5546d462533600a4015355ad45c613e0
AUIRF7343QTR
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 55V 4.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
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IPD60R600E6ATMA1 Infineon-IPD60R600E6-DS-v02_02-EN.pdf?fileId=db3a30433f1b26e8013f1f009327039e
IPD60R600E6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IRG4BC30KD-SPBF description irg4bc30kd-spbf.pdf?fileId=5546d462533600a40153563fcdc8227b
IRG4BC30KD-SPBF
Виробник: Infineon Technologies
Description: IGBT 600V 28A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 100 W
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IRG4BC30FDPBF description irg4bc30fdpbf.pdf?fileId=5546d462533600a40153563fa7ab2271
IRG4BC30FDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 42ns/230ns
Switching Energy: 630µJ (on), 1.39mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
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IRG4BC30F-SPBF IRG4BC30F.pdf
IRG4BC30F-SPBF
Виробник: Infineon Technologies
Description: IGBT 600V 31A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
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IRG4BC30FD-SPBF irg4bc30fd-spbf.pdf?fileId=5546d462533600a40153563fafdd2273
IRG4BC30FD-SPBF
Виробник: Infineon Technologies
Description: IGBT 600V 31A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 42ns/230ns
Switching Energy: 630µJ (on), 1.39mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
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IRG4PC40KPBF fundamentals-of-power-semiconductors
IRG4PC40KPBF
Виробник: Infineon Technologies
Description: IGBT 600V 42A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 620µJ (on), 330µJ (off)
Test Condition: 480V, 25A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 160 W
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IRG4PC40FDPBF irg4pc40fdpbf.pdf?fileId=5546d462533600a40153564401d422d2
IRG4PC40FDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 49A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 63ns/230ns
Switching Energy: 950µJ (on), 2.01mJ (off)
Test Condition: 480V, 27A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 196 A
Power - Max: 160 W
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T920N06TOFXPSA1 Infineon-T920N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128634e0db252f7
T920N06TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 600V 1500A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 925 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 600 V
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S29GL512S10FHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL512S10FHI010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Verified
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+788.33 грн
10+673.51 грн
25+642.26 грн
40+588.21 грн
180+543.98 грн
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IPP018N10N5AKSA1 Infineon-IPP018N10N5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185e4544cf66df7
IPP018N10N5AKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+534.29 грн
50+276.30 грн
100+253.37 грн
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IPP018N10N5XKSA1 Infineon-IPP018N10N5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185e4544cf66df7
IPP018N10N5XKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+530.32 грн
50+274.57 грн
100+251.79 грн
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IPB018N10N5ATMA1 Infineon-IPB018N10N5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185e4420f246df4
IPB018N10N5ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
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IPB018N10N5ATMA1 Infineon-IPB018N10N5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185e4420f246df4
IPB018N10N5ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
на замовлення 254 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+608.12 грн
10+398.76 грн
100+293.09 грн
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IR2132PBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
IR2132PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 3793 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
36+588.41 грн
Мінімальне замовлення: 36
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IR2132PBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
IR2132PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IR2133JPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2133JPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IR35221MTRPBF Infineon-IR35221MTRPBF-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e46b88f9c06f1&ack=t
IR35221MTRPBF
Виробник: Infineon Technologies
Description: IC CTRL XPHASE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 7mA
Supplier Device Package: 32-MLPQ (5x5)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+257.44 грн
Мінімальне замовлення: 3000
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IR35221MTRPBF Infineon-IR35221MTRPBF-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e46b88f9c06f1&ack=t
IR35221MTRPBF
Виробник: Infineon Technologies
Description: IC CTRL XPHASE 40QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 7mA
Supplier Device Package: 32-MLPQ (5x5)
на замовлення 7217 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+458.08 грн
10+338.52 грн
25+312.74 грн
100+266.95 грн
250+254.30 грн
500+246.68 грн
1000+236.46 грн
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CY7C1019DV33-10VXIT download
CY7C1019DV33-10VXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C1019DV33-10VXIT download
CY7C1019DV33-10VXIT
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+323.11 грн
10+289.51 грн
25+280.87 грн
50+257.46 грн
100+251.34 грн
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CY7C1019DV33-10BVXI download
CY7C1019DV33-10BVXI
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1605 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+288.98 грн
10+246.85 грн
25+235.40 грн
40+215.59 грн
80+207.99 грн
230+196.88 грн
480+186.39 грн
960+179.78 грн
Мінімальне замовлення: 2
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KP214E2611XTMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+242.17 грн
Мінімальне замовлення: 1500
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KP214E2611XTMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+500.95 грн
10+361.83 грн
25+321.67 грн
50+286.78 грн
100+279.22 грн
500+233.94 грн
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IPP057N08N3GXKSA1 Infineon-IPP057N08N3-DS-v01_02-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a304317a748360117cf0cf5951d06
IPP057N08N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
на замовлення 1107 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+249.28 грн
50+120.99 грн
100+109.41 грн
500+83.62 грн
1000+77.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDWD40E65E7XKSA1 Infineon-IDWD40E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59deb058ed
IDWD40E65E7XKSA1
Виробник: Infineon Technologies
Description: DIODE STD 650V 50A PGTO24722
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 89 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 166 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+292.95 грн
30+154.94 грн
120+126.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS2112SPBF irs2112pbf.pdf?fileId=5546d462533600a401535676702827b5
IRS2112SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 1640 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
166+133.57 грн
Мінімальне замовлення: 166
В кошику  од. на суму  грн.
CY9AFAA1NPMC-G-UNE2 Infineon-CY9AAA0N_SERIES_32_BIT_Arm_Cortex_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0a9a66657&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AFAA1NPMC-G-UNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 84
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+691.48 грн
10+518.25 грн
25+481.26 грн
90+415.89 грн
270+393.97 грн
450+385.86 грн
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AUIPS1031STRL AUIPS1031(S,R).pdf
AUIPS1031STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
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AUIPS1041RTRL AUIPS1041(L,R)42G.pdf
AUIPS1041RTRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: D-PAK (TO-252AA)
Fault Protection: Current Limiting (Fixed), Over Temperature
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AUIPS6021STRL AUIPS6021%28S%2CR%29.pdf
AUIPS6021STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 24mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIPS6031STRL AUIPS6031%28S%2CR%29.pdf
AUIPS6031STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.1A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIPS1011 AUIPS1011(S)(R).pdf
AUIPS1011
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 10mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 18A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Fixed), Over Temperature
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AUIPS1031 AUIPS1031(S,R).pdf
AUIPS1031
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.5A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Fixed), Over Temperature
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AUIPS1031R AUIPS1031(S,R).pdf
AUIPS1031R
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: D-Pak
Fault Protection: Current Limiting (Fixed), Over Temperature
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AUIPS2031R Infineon-AUIPS2031R-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aae1488334c5c
AUIPS2031R
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D-Pak
Fault Protection: Current Limiting (Fixed), Over Temperature
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IR2302PBF ir2302.pdf?fileId=5546d462533600a4015355c988b216de
IR2302PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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CY7C09359AV-9AXC CY7C09349AV, 59.pdf
CY7C09359AV-9AXC
Виробник: Infineon Technologies
Description: IC SRAM 144K PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 144Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 67 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 9 ns
Memory Organization: 8K x 18
DigiKey Programmable: Not Verified
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SMBT3904SH6327XTSA1 smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191
SMBT3904SH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS 2NPN 40V 0.2A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT363-PO
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