Фото | Назва | Виробник | Інформація |
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IS42S16100H-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
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IS42S16100H-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 1 шт |
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IS42S16100H-6TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1000 шт |
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IS42S16100H-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TSOP50 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 1 шт |
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IS42S16100H-7BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 286 шт |
товар відсутній |
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IS42S16100H-7BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 286 шт |
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IS42S16100H-7BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
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IS42S16100H-7TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 1 шт |
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IS42S16100H-7TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1000 шт |
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IS42S16160J-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
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IS42S16160J-6BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
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IS42S16160J-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
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IS42S16160J-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
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IS42S16160J-6TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
товар відсутній |
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IS42S16160J-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 1 шт |
товар відсутній |
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IS42S16160J-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
товар відсутній |
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IS42S16160J-7BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
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IS42S16160J-7BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
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IS42S16160J-7BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
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IS42S16160J-7BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
товар відсутній |
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IS42S16160J-7TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 1 шт |
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IS42S16160J-7TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS42S16160J-7TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 1 шт |
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IS42S16160J-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS42S16320F-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TWBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 240 шт |
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IS42S16320F-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 240 шт |
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IS42S16320F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
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IS42S16320F-6TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 108 шт |
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IS42S16320F-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 108 шт |
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IS42S16320F-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 167MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS42S16320F-7BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TWBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 240 шт |
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IS42S16320F-7BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TWBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
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IS42S16320F-7BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 240 шт |
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IS42S16320F-7BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
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IS42S16320F-7TL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 108 шт |
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IS42S16320F-7TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS42S16320F-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS42S16400J-5BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TFBGA54; 0÷70°C Mounting: SMD Operating temperature: 0...70°C Case: TFBGA54 Kind of package: in-tray; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 64Mb DRAM Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
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IS42S16400J-5TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS42S16400J-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
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IS42S16400J-6BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
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IS42S16400J-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
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IS42S16400J-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
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IS42S16400J-6TL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS42S16400J-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 1500 шт |
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IS42S16400J-7B2LI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 286 шт |
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IS42S16400J-7B2LI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
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IS42S16400J-7BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
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IS42S16400J-7BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
товар відсутній |
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IS42S16400J-7BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC кількість в упаковці: 348 шт |
товар відсутній |
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IS42S16400J-7BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC кількість в упаковці: 2500 шт |
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IS42S16800F-5TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1 шт |
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IS42S16800F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1500 шт |
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IS42S16800F-6BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: 0...70°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 348 шт |
товар відсутній |
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IS42S16800F-6BL-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: 0...70°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 2500 шт |
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IS42S16800F-6BLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 348 шт |
товар відсутній |
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IS42S16800F-6BLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54 Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 2500 шт |
товар відсутній |
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IS42S16800F-6TLI | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1 шт |
на замовлення 108 шт: термін постачання 7-14 дні (днів) |
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IS42S16800F-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Kind of package: reel; tape Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP54 II Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 1500 шт |
товар відсутній |
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IS42S16800F-7BL | ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54 Kind of package: in-tray; tube Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Clock frequency: 143MHz Kind of interface: parallel Memory: 128Mb DRAM Mounting: SMD Operating temperature: 0...70°C Case: TFBGA54 Supply voltage: 3...3.6V DC Type of integrated circuit: DRAM memory кількість в упаковці: 348 шт |
товар відсутній |
IS42S16100H-6BLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS42S16100H-6TL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
товар відсутній
IS42S16100H-6TL-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1000 шт
товар відсутній
IS42S16100H-6TLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
товар відсутній
IS42S16100H-7BL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 286 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 286 шт
товар відсутній
IS42S16100H-7BLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 286 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 286 шт
товар відсутній
IS42S16100H-7BLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS42S16100H-7TL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
товар відсутній
IS42S16100H-7TL-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1000 шт
товар відсутній
IS42S16160J-6BL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
IS42S16160J-6BL-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS42S16160J-6BLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
IS42S16160J-6BLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS42S16160J-6TL-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS42S16160J-6TLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
товар відсутній
IS42S16160J-6TLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS42S16160J-7BL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
IS42S16160J-7BL-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS42S16160J-7BLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
IS42S16160J-7BLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS42S16160J-7TL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
товар відсутній
IS42S16160J-7TL-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS42S16160J-7TLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 1 шт
товар відсутній
IS42S16160J-7TLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS42S16320F-6BL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TWBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TWBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
товар відсутній
IS42S16320F-6BLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
товар відсутній
IS42S16320F-6BLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS42S16320F-6TL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
товар відсутній
IS42S16320F-6TLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
товар відсутній
IS42S16320F-6TLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 167MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 167MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS42S16320F-7BL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
товар відсутній
IS42S16320F-7BL-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS42S16320F-7BLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 240 шт
товар відсутній
IS42S16320F-7BLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TWBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS42S16320F-7TL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 108 шт
товар відсутній
IS42S16320F-7TL-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS42S16320F-7TLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS42S16400J-5BL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TFBGA54; 0÷70°C
Mounting: SMD
Operating temperature: 0...70°C
Case: TFBGA54
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 64Mb DRAM
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TFBGA54; 0÷70°C
Mounting: SMD
Operating temperature: 0...70°C
Case: TFBGA54
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 64Mb DRAM
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
IS42S16400J-5TL-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS42S16400J-6BL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
IS42S16400J-6BL-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS42S16400J-6BLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
IS42S16400J-6BLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS42S16400J-6TL-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS42S16400J-6TLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 1500 шт
товар відсутній
IS42S16400J-7B2LI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 286 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 286 шт
товар відсутній
IS42S16400J-7B2LI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS42S16400J-7BL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
IS42S16400J-7BL-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS42S16400J-7BLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
кількість в упаковці: 348 шт
товар відсутній
IS42S16400J-7BLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 143MHz; 7ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
кількість в упаковці: 2500 шт
товар відсутній
IS42S16800F-5TLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
товар відсутній
IS42S16800F-5TLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
товар відсутній
IS42S16800F-6BL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
товар відсутній
IS42S16800F-6BL-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
товар відсутній
IS42S16800F-6BLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
товар відсутній
IS42S16800F-6BLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA54
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
товар відсутній
IS42S16800F-6TLI |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1 шт
на замовлення 108 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 434.58 грн |
4+ | 310.41 грн |
9+ | 282.31 грн |
108+ | 270.69 грн |
IS42S16800F-6TLI-TR |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Kind of package: reel; tape
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP54 II
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 1500 шт
товар відсутній
IS42S16800F-7BL |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TFBGA54
Kind of package: in-tray; tube
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Clock frequency: 143MHz
Kind of interface: parallel
Memory: 128Mb DRAM
Mounting: SMD
Operating temperature: 0...70°C
Case: TFBGA54
Supply voltage: 3...3.6V DC
Type of integrated circuit: DRAM memory
кількість в упаковці: 348 шт
товар відсутній