Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (358199) > Сторінка 1938 з 5970
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||
|---|---|---|---|---|---|---|---|---|---|
 |
CDLL5530/TR | Microchip Technology |
Description: DIODE ZENER 10V 500MW DO213AB Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: DO-213AB Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 8 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
CDLL5539A/TR | Microchip Technology |
Description: DIODE ZENER 19V 500MW DO213AB Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 19 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AB Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 16 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
CDLL5536B/TR | Microchip Technology |
Description: DIODE ZENER 16V 500MW DO213AB Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AB Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 14.4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
CDLL5537/TR | Microchip Technology |
Description: DIODE ZENER 17V 500MW DO213AB Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 17 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AB Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 14 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
CDLL5533/TR | Microchip Technology |
Description: DIODE ZENER 13V 500MW DO213AB Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: DO-213AB Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 10.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
CDLL5535A/TR | Microchip Technology |
Description: DIODE ZENER 15V 500MW DO213AB Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AB Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 12.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
CDLL5537B/TR | Microchip Technology |
Description: DIODE ZENER 17V 500MW DO213AB Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 17 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AB Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 15.3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
CDLL5535/TR | Microchip Technology |
Description: DIODE ZENER 15V 500MW DO213AB Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AB Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 12.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
CDLL5530A/TR | Microchip Technology |
Description: DIODE ZENER 10V 500MW DO213AB Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: DO-213AB Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 8 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
CDLL5532/TR | Microchip Technology |
Description: DIODE ZENER 12V 500MW DO213AB Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: DO-213AB Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
CDLL5531A/TR | Microchip Technology |
Description: DIODE ZENER 11V 500MW DO213AB Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: DO-213AB Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
CDLL5537A/TR | Microchip Technology |
Description: DIODE ZENER 17V 500MW DO213AB Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 17 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AB Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 14 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
M5KP33A | Microchip Technology |
 Description: TVS DIODE 33VWM 53.3VC DO204ARPackaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 94A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
M15KP33A | Microchip Technology |
Description: TVS DIODE 33VWM 54.8VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 274A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 54.8V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
MCP3919A1-E/SSVAO | Microchip Technology |
Description: THREE CHANNEL ENERGY METER FRONT Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Number of Bits: 16, 24 Voltage - Supply, Analog: 2.7V ~ 3.6V Voltage - Supply, Digital: 2.7V ~ 3.6V Supplier Device Package: 28-SSOP Number of Channels: 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
MCP3919A1T-E/SSVAO | Microchip Technology |
Description: THREE CHANNEL ENERGY METER FRONT Packaging: Tape & Reel (TR) Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Number of Bits: 16, 24 Voltage - Supply, Analog: 2.7V ~ 3.6V Voltage - Supply, Digital: 2.7V ~ 3.6V Supplier Device Package: 28-SSOP Number of Channels: 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
APT10045LLLG | Microchip Technology |
Description: MOSFET N-CH 1000V 23A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
APT10045B2FLLG | Microchip Technology |
Description: MOSFET N-CH 1000V 23A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
APT10045LFLLG | Microchip Technology |
Description: MOSFET N-CH 1000V 23A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
APT10045B2LLG | Microchip Technology |
Description: MOSFET N-CH 1000V 23A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V Power Dissipation (Max): 565W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
APT10045JFLL | Microchip Technology |
Description: MOSFET N-CH 1000V 21A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
ATSAM4LS4BA-AUR | Microchip Technology |
Description: IC MCU 32BIT 256KB FLASH 64TQFP Packaging: Cut Tape (CT) Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 7x12b; D/A 1x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Number of I/O: 48 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
ATSAM4LC4BA-AUR | Microchip Technology |
Description: IC MCU 32BIT 256KB FLASH 64TQFP Packaging: Cut Tape (CT) Package / Case: 64-TQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 7x12b; D/A 1x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Number of I/O: 43 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
MPLAD36KP160AE3 | Microchip Technology |
Description: TVS DIODE 160VWM 259VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 36000W (36kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
MPLAD36KP160AE3/TR | Microchip Technology |
Description: TVS DIODE 160VWM 259VC PLAD Packaging: Tape & Reel (TR) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 36000W (36kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
MPLAD36KP160CAE3 | Microchip Technology |
Description: TVS DIODE 160VWM 259VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 36000W (36kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
MPLAD36KP160CA/TR | Microchip Technology |
Description: TVS DIODE 160VWM 259VC PLAD Packaging: Tape & Reel (TR) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 36000W (36kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
MPLAD36KP160CAE3/TR | Microchip Technology |
Description: TVS DIODE 160VWM 259VC PLAD Packaging: Tape & Reel (TR) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 36000W (36kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
MAPLAD36KP160A | Microchip Technology |
Description: TVS DIODE 160VWM 259VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 36000W (36kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
MAPLAD36KP160AE3 | Microchip Technology |
Description: TVS DIODE 160VWM 259VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 36000W (36kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
MAPLAD36KP160CA | Microchip Technology |
Description: TVS DIODE 160VWM 259VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 36000W (36kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
MAPLAD36KP160CAE3 | Microchip Technology |
Description: TVS DIODE 160VWM 259VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 36000W (36kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
MP6KE51A | Microchip Technology |
Description: TVS DIODE 43.6VWM 70.1VC T18 Packaging: Bulk Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.6A Voltage - Reverse Standoff (Typ): 43.6V Supplier Device Package: T-18 Unidirectional Channels: 1 Voltage - Breakdown (Min): 48.5V Voltage - Clamping (Max) @ Ipp: 70.1V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
2N3634UB/TR | Microchip Technology |
Description: TRANS PNP 140V 1A UB Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: UB Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
JAN2N3634UB/TR | Microchip Technology |
Description: TRANS PNP 140V 1A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JANTXV2N3634UB/TR | Microchip Technology |
Description: TRANS PNP 140V 1A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JANTXV2N3634UB | Microchip Technology |
Description: TRANS PNP 140V 1A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JANTX2N3634UB/TR | Microchip Technology |
Description: TRANS PNP 140V 1A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JANSF2N3634UB | Microchip Technology |
Description: TRANS PNP 140V 1A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JANSF2N3634UB/TR | Microchip Technology |
Description: 140V RH SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||
|
|
JANSR2N3634UB | Microchip Technology |
Description: TRANS PNP 140V 1A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
MIC4468CWM TR | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 14ns, 13ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 4 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.2A, 1.2A DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
SMBJ5929BE3/TR13 | Microchip Technology |
Description: DIODE ZENER 15V 2W DO214AA Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-214AA (SMBJ) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
SMBJ5929BE3/TR13 | Microchip Technology |
Description: DIODE ZENER 15V 2W DO214AA Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-214AA (SMBJ) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
1N5276BE3 | Microchip Technology |
Description: DIODE ZENER 150V 500MW DO204AH Tolerance: ±5% Packaging: Bag Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 150 V Impedance (Max) (Zzt): 1500 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 114 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| MSMCGLCE64Ae3 | Microchip Technology |
Description: TVS DIODE 64VWM 103VC DO214AB Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 14.6A Voltage - Reverse Standoff (Typ): 64V Supplier Device Package: DO-214AB (SMCG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| MSMCGLCE70A | Microchip Technology |
Description: TVS DIODE 70VWM 113VC DO214AB Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 13.3A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-214AB (SMCG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
 |
MSMCJ120A | Microchip Technology |
Description: TVS DIODE 120VWM 193VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7.8A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
MSMCJ13A | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 69.7A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
MSCDC100A120D1PAG | Microchip Technology |
Description: DIODE MODULE SIC 1200V 100A D1P Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: D1P Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
|
||||
|
|
MSCDC100A70D1PAG | Microchip Technology |
Description: DIODE MODULE SIC 700V 100A D1P Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: D1P Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A Current - Reverse Leakage @ Vr: 400 µA @ 700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
JANTX1N4955 | Microchip Technology |
Description: DIODE ZENER 7.5V 5W AXIAL Tolerance: ±5% Packaging: Bulk Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 1.5 Ohms Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 5.7 V Qualification: MIL-PRF-19500/356 |
на замовлення 103 шт: термін постачання 21-31 дні (днів) |
|
||||
|
|
JANTX1N4954 | Microchip Technology |
Description: DIODE ZENER 6.8V 5W AXIAL Tolerance: ±5% Packaging: Bulk Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 1 Ohms Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 5.2 V Qualification: MIL-PRF-19500/356 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JANTX1N4958 | Microchip Technology |
Description: DIODE ZENER 10V 5W AXIAL Tolerance: ±5% Packaging: Bulk Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 2 Ohms Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V Qualification: MIL-PRF-19500/356 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
JANTX1N4954US | Microchip Technology |
Description: DIODE ZENER 6.8V 5W D5B Tolerance: ±5% Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: D-5B Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 5.2 V Qualification: MIL-PRF-19500/356 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
MSMLG75Ae3 | Microchip Technology |
Description: TVS DIODE 75VWM 121VC DO215AB Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 24.8A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: DO-215AB (SMLG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
JAN1N3022D-1 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO204AL Tolerance: ±1% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-204AL (DO-41) Grade: Military Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V Qualification: MIL-PRF-19500/115 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JANTXV1N3022C-1 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO204AL Tolerance: ±2% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-204AL (DO-41) Grade: Military Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V Qualification: MIL-PRF-19500/115 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
JAN1N3022CUR-1 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO213AB Tolerance: ±2% Packaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Grade: Military Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V Qualification: MIL-PRF-19500/115 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JANTX1N3022CUR-1 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO213AB Tolerance: ±2% Packaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Grade: Military Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V Qualification: MIL-PRF-19500/115 |
товару немає в наявності |
В кошику од. на суму грн. |
| CDLL5530/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8 V
Description: DIODE ZENER 10V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8 V
товару немає в наявності
В кошику
од. на суму грн.
| CDLL5539A/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 19V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 16 V
Description: DIODE ZENER 19V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 16 V
товару немає в наявності
В кошику
од. на суму грн.
| CDLL5536B/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14.4 V
Description: DIODE ZENER 16V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14.4 V
товару немає в наявності
В кошику
од. на суму грн.
| CDLL5537/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 17V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14 V
Description: DIODE ZENER 17V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14 V
товару немає в наявності
В кошику
од. на суму грн.
| CDLL5533/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 13V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 10.5 V
Description: DIODE ZENER 13V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 10.5 V
товару немає в наявності
В кошику
од. на суму грн.
| CDLL5535A/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.5 V
Description: DIODE ZENER 15V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.5 V
товару немає в наявності
В кошику
од. на суму грн.
| CDLL5537B/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 17V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15.3 V
Description: DIODE ZENER 17V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15.3 V
товару немає в наявності
В кошику
од. на суму грн.
| CDLL5535/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AB
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.5 V
Description: DIODE ZENER 15V 500MW DO213AB
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.5 V
товару немає в наявності
В кошику
од. на суму грн.
| CDLL5530A/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO213AB
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8 V
Description: DIODE ZENER 10V 500MW DO213AB
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8 V
товару немає в наявності
В кошику
од. на суму грн.
| CDLL5532/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AB
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.5 V
Description: DIODE ZENER 12V 500MW DO213AB
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.5 V
товару немає в наявності
В кошику
од. на суму грн.
| CDLL5531A/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 11V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9 V
Description: DIODE ZENER 11V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9 V
товару немає в наявності
В кошику
од. на суму грн.
| CDLL5537A/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 17V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14 V
Description: DIODE ZENER 17V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14 V
товару немає в наявності
В кошику
од. на суму грн.
| M5KP33A |
|
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 94A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 33VWM 53.3VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 94A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| M15KP33A |
|
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 54.8VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 54.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 33VWM 54.8VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 54.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MCP3919A1-E/SSVAO |
|
Виробник: Microchip Technology
Description: THREE CHANNEL ENERGY METER FRONT
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Bits: 16, 24
Voltage - Supply, Analog: 2.7V ~ 3.6V
Voltage - Supply, Digital: 2.7V ~ 3.6V
Supplier Device Package: 28-SSOP
Number of Channels: 3
Description: THREE CHANNEL ENERGY METER FRONT
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Bits: 16, 24
Voltage - Supply, Analog: 2.7V ~ 3.6V
Voltage - Supply, Digital: 2.7V ~ 3.6V
Supplier Device Package: 28-SSOP
Number of Channels: 3
товару немає в наявності
В кошику
од. на суму грн.
| MCP3919A1T-E/SSVAO |
|
Виробник: Microchip Technology
Description: THREE CHANNEL ENERGY METER FRONT
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Bits: 16, 24
Voltage - Supply, Analog: 2.7V ~ 3.6V
Voltage - Supply, Digital: 2.7V ~ 3.6V
Supplier Device Package: 28-SSOP
Number of Channels: 3
Description: THREE CHANNEL ENERGY METER FRONT
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Bits: 16, 24
Voltage - Supply, Analog: 2.7V ~ 3.6V
Voltage - Supply, Digital: 2.7V ~ 3.6V
Supplier Device Package: 28-SSOP
Number of Channels: 3
товару немає в наявності
В кошику
од. на суму грн.
| APT10045LLLG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 23A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Description: MOSFET N-CH 1000V 23A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APT10045B2FLLG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 23A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Description: MOSFET N-CH 1000V 23A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APT10045LFLLG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 23A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Description: MOSFET N-CH 1000V 23A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APT10045B2LLG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 23A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Description: MOSFET N-CH 1000V 23A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APT10045JFLL |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 21A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Description: MOSFET N-CH 1000V 21A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| ATSAM4LS4BA-AUR |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| ATSAM4LC4BA-AUR |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 43
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 43
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| MPLAD36KP160AE3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MPLAD36KP160AE3/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MPLAD36KP160CAE3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MPLAD36KP160CA/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MPLAD36KP160CAE3/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MAPLAD36KP160A |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MAPLAD36KP160AE3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MAPLAD36KP160CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MAPLAD36KP160CAE3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MP6KE51A |
|
Виробник: Microchip Technology
Description: TVS DIODE 43.6VWM 70.1VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 43.6VWM 70.1VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| 2N3634UB/TR |
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N3634UB/TR |
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV2N3634UB/TR |
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV2N3634UB |
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N3634UB/TR |
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
товару немає в наявності
В кошику
од. на суму грн.
| JANSF2N3634UB |
|
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| JANSR2N3634UB |
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
товару немає в наявності
В кошику
од. на суму грн.
| MIC4468CWM TR |
|
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 14ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 4
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 14ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 4
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ5929BE3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 15V 2W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
Description: DIODE ZENER 15V 2W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ5929BE3/TR13 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 15V 2W DO214AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
Description: DIODE ZENER 15V 2W DO214AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N5276BE3 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 150V 500MW DO204AH
Tolerance: ±5%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 114 V
Description: DIODE ZENER 150V 500MW DO204AH
Tolerance: ±5%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 114 V
товару немає в наявності
В кошику
од. на суму грн.
| MSMCGLCE64Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MSMCGLCE70A |
|
Виробник: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MSMCJ120A |
|
Виробник: Microchip Technology
Description: TVS DIODE 120VWM 193VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MSMCJ13A |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 69.7A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 13VWM 21.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 69.7A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MSCDC100A120D1PAG |
|
Виробник: Microchip Technology
Description: DIODE MODULE SIC 1200V 100A D1P
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1P
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Description: DIODE MODULE SIC 1200V 100A D1P
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1P
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11552.93 грн |
| MSCDC100A70D1PAG |
|
Виробник: Microchip Technology
Description: DIODE MODULE SIC 700V 100A D1P
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1P
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 400 µA @ 700 V
Description: DIODE MODULE SIC 700V 100A D1P
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1P
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 400 µA @ 700 V
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N4955 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 1.5 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 5.7 V
Qualification: MIL-PRF-19500/356
Description: DIODE ZENER 7.5V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 1.5 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 5.7 V
Qualification: MIL-PRF-19500/356
на замовлення 103 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 478.95 грн |
| 100+ | 428.31 грн |
| JANTX1N4954 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 5.2 V
Qualification: MIL-PRF-19500/356
Description: DIODE ZENER 6.8V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 5.2 V
Qualification: MIL-PRF-19500/356
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N4958 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 10V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 2 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
Qualification: MIL-PRF-19500/356
Description: DIODE ZENER 10V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 2 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
Qualification: MIL-PRF-19500/356
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N4954US |
|
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 5.2 V
Qualification: MIL-PRF-19500/356
Description: DIODE ZENER 6.8V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 5.2 V
Qualification: MIL-PRF-19500/356
товару немає в наявності
В кошику
од. на суму грн.
| MSMLG75Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 75VWM 121VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.8A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-215AB (SMLG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 75VWM 121VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.8A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-215AB (SMLG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N3022D-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 12V 1W DO204AL
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
Description: DIODE ZENER 12V 1W DO204AL
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N3022C-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 12V 1W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
Description: DIODE ZENER 12V 1W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N3022CUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 12V 1W DO213AB
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
Description: DIODE ZENER 12V 1W DO213AB
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N3022CUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 12V 1W DO213AB
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
Description: DIODE ZENER 12V 1W DO213AB
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
товару немає в наявності
В кошику
од. на суму грн.