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DSC1001CI5-004.9152 DSC1001CI5-004.9152 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 4.9152MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±10ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 8mA
Supplier Device Package: 4-CDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 4.9152 MHz
Base Resonator: MEMS
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DSA6101JA2B-004.9152TVAO DSA6101JA2B-004.9152TVAO Microchip Technology DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222.pdf Description: MEMS OSC, AUTO, LVCMOS, 4.9152MH
Packaging: Tape & Reel (TR)
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Supplier Device Package: 4-VLGA (2.5x2)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 4.9152 MHz
Base Resonator: MEMS
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DSA6101JA2B-004.9152VAO DSA6101JA2B-004.9152VAO Microchip Technology DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222.pdf Description: MEMS OSC, AUTO, LVCMOS, 4.9152MH
Packaging: Tube
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Supplier Device Package: 4-VLGA (2.5x2)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 4.9152 MHz
Base Resonator: MEMS
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MIC4424CWM TR MIC4424CWM TR Microchip Technology MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
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MIC4424CWM MIC4424CWM Microchip Technology MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
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MIC4425CWM MIC4425CWM Microchip Technology MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
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MIC4425BWM MIC4425BWM Microchip Technology MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
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MIC4425YWM MIC4425YWM Microchip Technology MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
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MIC4425BN MIC4425BN Microchip Technology MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
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1N2240A 1N2240A Microchip Technology S%2CR20.pdf Description: DIODE STANDARD 800V 5A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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CDLL5538B/TR CDLL5538B/TR Microchip Technology Description: DIODE ZENER 18V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 16.2 V
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CDLL5539B/TR CDLL5539B/TR Microchip Technology Description: DIODE ZENER 19V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 17.1 V
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CDLL5538A/TR CDLL5538A/TR Microchip Technology Description: DIODE ZENER 18V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15 V
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CDLL5536/TR CDLL5536/TR Microchip Technology Description: DIODE ZENER 16V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13 V
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CDLL5538/TR CDLL5538/TR Microchip Technology Description: DIODE ZENER 18V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15 V
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CDLL5532B/TR CDLL5532B/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
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CDLL5530/TR CDLL5530/TR Microchip Technology Description: DIODE ZENER 10V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8 V
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CDLL5539A/TR CDLL5539A/TR Microchip Technology Description: DIODE ZENER 19V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 16 V
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CDLL5536B/TR CDLL5536B/TR Microchip Technology Description: DIODE ZENER 16V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14.4 V
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CDLL5537/TR CDLL5537/TR Microchip Technology Description: DIODE ZENER 17V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14 V
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CDLL5533/TR CDLL5533/TR Microchip Technology Description: DIODE ZENER 13V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 10.5 V
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CDLL5535A/TR CDLL5535A/TR Microchip Technology Description: DIODE ZENER 15V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.5 V
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CDLL5537B/TR CDLL5537B/TR Microchip Technology Description: DIODE ZENER 17V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15.3 V
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CDLL5535/TR CDLL5535/TR Microchip Technology Description: DIODE ZENER 15V 500MW DO213AB
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.5 V
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CDLL5530A/TR CDLL5530A/TR Microchip Technology Description: DIODE ZENER 10V 500MW DO213AB
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8 V
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CDLL5532/TR CDLL5532/TR Microchip Technology Description: DIODE ZENER 12V 500MW DO213AB
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.5 V
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CDLL5531A/TR CDLL5531A/TR Microchip Technology Description: DIODE ZENER 11V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9 V
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CDLL5537A/TR CDLL5537A/TR Microchip Technology Description: DIODE ZENER 17V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14 V
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M5KP33A M5KP33A Microchip Technology rf01010_rb.pdf Description: TVS DIODE 33VWM 53.3VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 94A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M15KP33A M15KP33A Microchip Technology rf01011_m15kp_rev_e.pdf Description: TVS DIODE 33VWM 54.8VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 54.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MCP3919A1-E/SSVAO MCP3919A1-E/SSVAO Microchip Technology MCP3919-3V-Three-Channel-Analog-Front-End-DS20005347C.pdf Description: THREE CHANNEL ENERGY METER FRONT
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Bits: 16, 24
Voltage - Supply, Analog: 2.7V ~ 3.6V
Voltage - Supply, Digital: 2.7V ~ 3.6V
Supplier Device Package: 28-SSOP
Number of Channels: 3
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MCP3919A1T-E/SSVAO MCP3919A1T-E/SSVAO Microchip Technology MCP3919-3V-Three-Channel-Analog-Front-End-DS20005347C.pdf Description: THREE CHANNEL ENERGY METER FRONT
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Bits: 16, 24
Voltage - Supply, Analog: 2.7V ~ 3.6V
Voltage - Supply, Digital: 2.7V ~ 3.6V
Supplier Device Package: 28-SSOP
Number of Channels: 3
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APT10045LLLG APT10045LLLG Microchip Technology 123945-apt10045b2-lll-g-c-pdf Description: MOSFET N-CH 1000V 23A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
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APT10045B2FLLG APT10045B2FLLG Microchip Technology 6549-apt10045b2fllg-apt10045lfllg-datasheet Description: MOSFET N-CH 1000V 23A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
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APT10045LFLLG APT10045LFLLG Microchip Technology 6549-apt10045b2fllg-apt10045lfllg-datasheet Description: MOSFET N-CH 1000V 23A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
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APT10045B2LLG APT10045B2LLG Microchip Technology 123945-apt10045b2-lll-g-c-pdf Description: MOSFET N-CH 1000V 23A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
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APT10045JFLL APT10045JFLL Microchip Technology 6548-apt10045jfll-datasheet Description: MOSFET N-CH 1000V 21A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
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ATSAM4LS4BA-AUR ATSAM4LS4BA-AUR Microchip Technology Atmel-42023-ARM-Microcontroller-ATSAM4L-Low-Power-LCD_Datasheet-Summary.pdf Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
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ATSAM4LC4BA-AUR ATSAM4LC4BA-AUR Microchip Technology Atmel-42023-ARM-Microcontroller-ATSAM4L-Low-Power-LCD_Datasheet-Summary.pdf Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 43
DigiKey Programmable: Not Verified
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MPLAD36KP160AE3 MPLAD36KP160AE3 Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160AE3/TR MPLAD36KP160AE3/TR Microchip Technology microsemi_rf01216_transient_voltage_suppressor_datasheet_revb.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160CAE3 MPLAD36KP160CAE3 Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160CA/TR MPLAD36KP160CA/TR Microchip Technology microsemi_rf01216_transient_voltage_suppressor_datasheet_revb.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160CAE3/TR MPLAD36KP160CAE3/TR Microchip Technology microsemi_rf01216_transient_voltage_suppressor_datasheet_revb.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160A MAPLAD36KP160A Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160AE3 MAPLAD36KP160AE3 Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160CA MAPLAD36KP160CA Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160CAE3 MAPLAD36KP160CAE3 Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP6KE51A MP6KE51A Microchip Technology 9518-mp6ke-pdf Description: TVS DIODE 43.6VWM 70.1VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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2N3634UB/TR 2N3634UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
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JAN2N3634UB/TR JAN2N3634UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTXV2N3634UB/TR JANTXV2N3634UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTXV2N3634UB JANTXV2N3634UB Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTX2N3634UB/TR JANTX2N3634UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSF2N3634UB JANSF2N3634UB Microchip Technology 2N3634-2N3637UB-LDS-0156-MIL-PRF-19500-357.pdf Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500
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JANSF2N3634UB/TR Microchip Technology Description: 140V RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
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JANSR2N3634UB JANSR2N3634UB Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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MIC4468CWM TR MIC4468CWM TR Microchip Technology MIC4467-68-69-Quad-1.2A-Peak-Low-Side-MOSFET-Drivers-DS20006614A.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 14ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 4
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
DigiKey Programmable: Not Verified
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SMBJ5929BE3/TR13 SMBJ5929BE3/TR13 Microchip Technology 10867-sa3-41-datasheet Description: DIODE ZENER 15V 2W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
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SMBJ5929BE3/TR13 SMBJ5929BE3/TR13 Microchip Technology 10867-sa3-41-datasheet Description: DIODE ZENER 15V 2W DO214AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
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DSC1001CI5-004.9152 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001CI5-004.9152
Виробник: Microchip Technology
Description: MEMS OSC XO 4.9152MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±10ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 8mA
Supplier Device Package: 4-CDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 4.9152 MHz
Base Resonator: MEMS
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DSA6101JA2B-004.9152TVAO DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222.pdf
DSA6101JA2B-004.9152TVAO
Виробник: Microchip Technology
Description: MEMS OSC, AUTO, LVCMOS, 4.9152MH
Packaging: Tape & Reel (TR)
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Supplier Device Package: 4-VLGA (2.5x2)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 4.9152 MHz
Base Resonator: MEMS
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DSA6101JA2B-004.9152VAO DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222.pdf
DSA6101JA2B-004.9152VAO
Виробник: Microchip Technology
Description: MEMS OSC, AUTO, LVCMOS, 4.9152MH
Packaging: Tube
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Supplier Device Package: 4-VLGA (2.5x2)
Height - Seated (Max): 0.035" (0.89mm)
Frequency: 4.9152 MHz
Base Resonator: MEMS
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MIC4424CWM TR MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf
MIC4424CWM TR
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
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MIC4424CWM MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf
MIC4424CWM
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
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MIC4425CWM MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf
MIC4425CWM
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
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MIC4425BWM MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf
MIC4425BWM
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
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MIC4425YWM MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf
MIC4425YWM
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
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MIC4425BN MIC4423-4-5-Dual-3A-Peak-Low-Side-MOSFET-Drivers-DS20006638A.pdf
MIC4425BN
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 28ns, 32ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
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1N2240A S%2CR20.pdf
1N2240A
Виробник: Microchip Technology
Description: DIODE STANDARD 800V 5A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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CDLL5538B/TR
CDLL5538B/TR
Виробник: Microchip Technology
Description: DIODE ZENER 18V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 16.2 V
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CDLL5539B/TR
CDLL5539B/TR
Виробник: Microchip Technology
Description: DIODE ZENER 19V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 17.1 V
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CDLL5538A/TR
CDLL5538A/TR
Виробник: Microchip Technology
Description: DIODE ZENER 18V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15 V
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CDLL5536/TR
CDLL5536/TR
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13 V
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CDLL5538/TR
CDLL5538/TR
Виробник: Microchip Technology
Description: DIODE ZENER 18V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15 V
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CDLL5532B/TR
CDLL5532B/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
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CDLL5530/TR
CDLL5530/TR
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8 V
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CDLL5539A/TR
CDLL5539A/TR
Виробник: Microchip Technology
Description: DIODE ZENER 19V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 16 V
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CDLL5536B/TR
CDLL5536B/TR
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14.4 V
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CDLL5537/TR
CDLL5537/TR
Виробник: Microchip Technology
Description: DIODE ZENER 17V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14 V
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CDLL5533/TR
CDLL5533/TR
Виробник: Microchip Technology
Description: DIODE ZENER 13V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 10.5 V
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CDLL5535A/TR
CDLL5535A/TR
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.5 V
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CDLL5537B/TR
CDLL5537B/TR
Виробник: Microchip Technology
Description: DIODE ZENER 17V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15.3 V
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CDLL5535/TR
CDLL5535/TR
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AB
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.5 V
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CDLL5530A/TR
CDLL5530A/TR
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO213AB
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8 V
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CDLL5532/TR
CDLL5532/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AB
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.5 V
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CDLL5531A/TR
CDLL5531A/TR
Виробник: Microchip Technology
Description: DIODE ZENER 11V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9 V
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CDLL5537A/TR
CDLL5537A/TR
Виробник: Microchip Technology
Description: DIODE ZENER 17V 500MW DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AB
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14 V
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M5KP33A rf01010_rb.pdf
M5KP33A
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 94A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M15KP33A rf01011_m15kp_rev_e.pdf
M15KP33A
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 54.8VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 54.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MCP3919A1-E/SSVAO MCP3919-3V-Three-Channel-Analog-Front-End-DS20005347C.pdf
MCP3919A1-E/SSVAO
Виробник: Microchip Technology
Description: THREE CHANNEL ENERGY METER FRONT
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Bits: 16, 24
Voltage - Supply, Analog: 2.7V ~ 3.6V
Voltage - Supply, Digital: 2.7V ~ 3.6V
Supplier Device Package: 28-SSOP
Number of Channels: 3
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MCP3919A1T-E/SSVAO MCP3919-3V-Three-Channel-Analog-Front-End-DS20005347C.pdf
MCP3919A1T-E/SSVAO
Виробник: Microchip Technology
Description: THREE CHANNEL ENERGY METER FRONT
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Bits: 16, 24
Voltage - Supply, Analog: 2.7V ~ 3.6V
Voltage - Supply, Digital: 2.7V ~ 3.6V
Supplier Device Package: 28-SSOP
Number of Channels: 3
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APT10045LLLG 123945-apt10045b2-lll-g-c-pdf
APT10045LLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 23A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
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APT10045B2FLLG 6549-apt10045b2fllg-apt10045lfllg-datasheet
APT10045B2FLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 23A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
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APT10045LFLLG 6549-apt10045b2fllg-apt10045lfllg-datasheet
APT10045LFLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 23A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
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APT10045B2LLG 123945-apt10045b2-lll-g-c-pdf
APT10045B2LLG
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 23A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 11.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
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APT10045JFLL 6548-apt10045jfll-datasheet
APT10045JFLL
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 21A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
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ATSAM4LS4BA-AUR Atmel-42023-ARM-Microcontroller-ATSAM4L-Low-Power-LCD_Datasheet-Summary.pdf
ATSAM4LS4BA-AUR
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
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ATSAM4LC4BA-AUR Atmel-42023-ARM-Microcontroller-ATSAM4L-Low-Power-LCD_Datasheet-Summary.pdf
ATSAM4LC4BA-AUR
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 43
DigiKey Programmable: Not Verified
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MPLAD36KP160AE3 MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
MPLAD36KP160AE3
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160AE3/TR microsemi_rf01216_transient_voltage_suppressor_datasheet_revb.pdf
MPLAD36KP160AE3/TR
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160CAE3 MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
MPLAD36KP160CAE3
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160CA/TR microsemi_rf01216_transient_voltage_suppressor_datasheet_revb.pdf
MPLAD36KP160CA/TR
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160CAE3/TR microsemi_rf01216_transient_voltage_suppressor_datasheet_revb.pdf
MPLAD36KP160CAE3/TR
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160A MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
MAPLAD36KP160A
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160AE3 MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
MAPLAD36KP160AE3
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160CA MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
MAPLAD36KP160CA
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160CAE3 MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
MAPLAD36KP160CAE3
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP6KE51A 9518-mp6ke-pdf
MP6KE51A
Виробник: Microchip Technology
Description: TVS DIODE 43.6VWM 70.1VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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2N3634UB/TR
2N3634UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
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JAN2N3634UB/TR
JAN2N3634UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTXV2N3634UB/TR
JANTXV2N3634UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTXV2N3634UB
JANTXV2N3634UB
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTX2N3634UB/TR
JANTX2N3634UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSF2N3634UB 2N3634-2N3637UB-LDS-0156-MIL-PRF-19500-357.pdf
JANSF2N3634UB
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500
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JANSF2N3634UB/TR
Виробник: Microchip Technology
Description: 140V RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
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JANSR2N3634UB
JANSR2N3634UB
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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MIC4468CWM TR MIC4467-68-69-Quad-1.2A-Peak-Low-Side-MOSFET-Drivers-DS20006614A.pdf
MIC4468CWM TR
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 14ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 4
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
DigiKey Programmable: Not Verified
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SMBJ5929BE3/TR13 10867-sa3-41-datasheet
SMBJ5929BE3/TR13
Виробник: Microchip Technology
Description: DIODE ZENER 15V 2W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
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SMBJ5929BE3/TR13 10867-sa3-41-datasheet
SMBJ5929BE3/TR13
Виробник: Microchip Technology
Description: DIODE ZENER 15V 2W DO214AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
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