Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (281266) > Сторінка 376 з 4688
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
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MA180016 | Microchip Technology |
Description: MODULE PLUG-IN PICDEM HPC BLANKAccessory Type: Plug-In Module (PIM) For Use With/Related Products: PIC18FxxJxx Packaging: Bulk |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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MA300016 | Microchip Technology |
Description: MODULE PLUG-IN DSPICDEM 80TQFP Accessory Type: Plug-In Module (PIM) For Use With/Related Products: dsPIC30F2023 Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||
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PCM18XP1 | Microchip Technology |
Description: MODULE PROC18F4580/4680,1/2680,1Part Status: Obsolete Accessory Type: Processor Module For Use With/Related Products: ICE2000 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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AT24C16B-TH-T | Microchip Technology |
Description: IC EEPROM 16KBIT I2C 1MHZ 8TSSOP |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||
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AT24C16BN-SH-T | Microchip Technology |
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||
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MIC4103YM | Microchip Technology |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 9V ~ 16V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 118 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 6ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 3V, 8V Current - Peak Output (Source, Sink): 2A, 3A DigiKey Programmable: Not Verified |
на замовлення 2008 шт: термін постачання 21-31 дні (днів) |
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MIC4104YM | Microchip Technology |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 9V ~ 16V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 118 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 6ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 2A, 3A DigiKey Programmable: Not Verified |
на замовлення 462 шт: термін постачання 21-31 дні (днів) |
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MIC4722YML-TR | Microchip Technology |
Description: IC REG BUCK ADJ 3A 12MLFPackaging: Tape & Reel (TR) Package / Case: 12-VFDFN Exposed Pad, 12-MLF® Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 2.7MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 12-MLF™ (4x4) Synchronous Rectifier: No Voltage - Output (Max): 5.5V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 1V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||
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MIC5232-1.2YML-TR | Microchip Technology |
Description: IC REG LINEAR 1.2V 10MA 6MLFProtection Features: Reverse Polarity Voltage Dropout (Max): 0.3V @ 10mA PSRR: 55dB ~ 35dB (10Hz ~ 1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 1.2V Supplier Device Package: 6-DFN (2x2) Number of Regulators: 1 Voltage - Input (Max): 7V Current - Quiescent (Iq): 3 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 10mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-VDFN Exposed Pad, 6-MLF® Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||
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MIC5301-2.85YD5-TR | Microchip Technology |
Description: IC REG LIN 2.85V 150MA TSOT23-5Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.1V @ 150mA PSRR: 75dB ~ 50dB (1kHz ~ 20kHz) Control Features: Enable Voltage - Output (Min/Fixed): 2.85V Supplier Device Package: TSOT-23-5 Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 120 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||
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SY58603UMG-TR | Microchip Technology |
Description: IC CLK BUFFER 1:1 3GHZ 8MLFPackaging: Tape & Reel (TR) Package / Case: 8-VFDFN Exposed Pad, 8-MLF® Number of Circuits: 1 Mounting Type: Surface Mount Output: CML Type: Buffer/Driver Input: CML, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.6V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 8-MLF® (2x2) Frequency - Max: 3 GHz |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||
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SY58604UMG-TR | Microchip Technology |
Description: IC CLK BUFFER 1:1 3GHZ 8MLFPackaging: Tape & Reel (TR) Package / Case: 8-VFDFN Exposed Pad, 8-MLF® Number of Circuits: 1 Mounting Type: Surface Mount Output: LVPECL Type: Buffer/Driver Input: CML, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.6V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 8-MLF® (2x2) Part Status: Active Frequency - Max: 3 GHz |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||
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SY58605UMG-TR | Microchip Technology |
Description: IC CLK BUFFER 1:1 3GHZ 8MLFPackaging: Tape & Reel (TR) Package / Case: 8-VFDFN Exposed Pad, 8-MLF® Number of Circuits: 1 Mounting Type: Surface Mount Output: LVDS Type: Buffer/Driver Input: CML, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 2.625V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 8-MLF® (2x2) Frequency - Max: 3 GHz |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SY58606UMG | Microchip Technology |
Description: IC CLK BUFFER 1:2 3GHZ 16MLFFrequency - Max: 3 GHz Supplier Device Package: 16-MLF® (3x3) Differential - Input:Output: Yes/Yes Ratio - Input:Output: 1:2 Voltage - Supply: 2.375V ~ 3.6V Operating Temperature: -40°C ~ 85°C Input: CML, LVDS, LVPECL Type: Fanout Buffer (Distribution) Output: CML Mounting Type: Surface Mount Number of Circuits: 1 Package / Case: 16-VFQFN Exposed Pad, 16-MLF® Packaging: Tube |
на замовлення 94 шт: термін постачання 21-31 дні (днів) |
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SY58607UMG | Microchip Technology |
Description: IC CLK BUFFER 1:2 3GHZ 16MLFFrequency - Max: 3 GHz Supplier Device Package: 16-MLF® (3x3) Differential - Input:Output: Yes/Yes Ratio - Input:Output: 1:2 Voltage - Supply: 2.375V ~ 3.6V Operating Temperature: -40°C ~ 85°C Input: CML, LVDS, LVPECL Type: Fanout Buffer (Distribution) Output: LVPECL Mounting Type: Surface Mount Number of Circuits: 1 Package / Case: 16-VFQFN Exposed Pad, 16-MLF® Packaging: Tray |
на замовлення 362 шт: термін постачання 21-31 дні (днів) |
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SY89645LK4G | Microchip Technology |
Description: IC CLK BUFFER 1:4 650MHZ 20TSSOPPackaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVDS Type: Fanout Buffer (Distribution) Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:4 Differential - Input:Output: No/Yes Supplier Device Package: 20-TSSOP Part Status: Active Frequency - Max: 650 MHz |
на замовлення 1158 шт: термін постачання 21-31 дні (днів) |
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SY88289ALMG | Microchip Technology |
Description: IC POST AMP 3.3V 3.2GBPS 16-MLF |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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SY88289CLMG | Microchip Technology |
Description: IC POST AMP 3.3V 3.2GBPS 16-MLF |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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SY88345BLEY | Microchip Technology |
Description: IC POST AMP 3.3V 3.2GBPS 10-MSOP |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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SY58603UMG-TR | Microchip Technology |
Description: IC CLK BUFFER 1:1 3GHZ 8MLFPackaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad, 8-MLF® Number of Circuits: 1 Mounting Type: Surface Mount Output: CML Type: Buffer/Driver Input: CML, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.6V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 8-MLF® (2x2) Frequency - Max: 3 GHz |
на замовлення 529 шт: термін постачання 21-31 дні (днів) |
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SY58604UMG-TR | Microchip Technology |
Description: IC CLK BUFFER 1:1 3GHZ 8MLFPackaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad, 8-MLF® Number of Circuits: 1 Mounting Type: Surface Mount Output: LVPECL Type: Buffer/Driver Input: CML, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.6V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 8-MLF® (2x2) Part Status: Active Frequency - Max: 3 GHz |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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SY58605UMG-TR | Microchip Technology |
Description: IC CLK BUFFER 1:1 3GHZ 8MLFPackaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad, 8-MLF® Number of Circuits: 1 Mounting Type: Surface Mount Output: LVDS Type: Buffer/Driver Input: CML, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 2.625V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 8-MLF® (2x2) Frequency - Max: 3 GHz |
на замовлення 5751 шт: термін постачання 21-31 дні (днів) |
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KSZ8893MQL-EVAL | Microchip Technology |
Description: EVAL BOARD FOR KSZ8893MQLPackaging: Bulk Embedded: No Secondary Attributes: MII, RMII, SNI, Auto MDI, MDI-X Auto Polarity Correction, LinkMD Primary Attributes: 3 Ports, 100BASE-TX/100BASE-FX/10BASE-T, Managed Supplied Contents: Board(s) Utilized IC / Part: KSZ8893MQL Type: Interface Function: Ethernet Controller (PHY and MAC) Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT14M100B | Microchip Technology |
Description: MOSFET N-CH 1000V 14A TO247Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 80 шт В кошику од. на суму грн. | ||||||
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APT15DQ100KG | Microchip Technology |
Description: DIODE STD 1000V 15A TO220 [K] |
на замовлення 677 шт: термін постачання 21-31 дні (днів) |
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APT15DQ60KG | Microchip Technology |
Description: DIODE GP 600V 15A TO220Current - Reverse Leakage @ Vr: 25 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220 [K] Current - Average Rectified (Io): 15A Technology: Standard Reverse Recovery Time (trr): 19 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
на замовлення 1275 шт: термін постачання 21-31 дні (днів) |
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APT15GP60BDQ1G | Microchip Technology |
Description: IGBT PT 600V 56A TO247Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 250 W Current - Collector Pulsed (Icm): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 56 A Part Status: Active Gate Charge: 55 nC Test Condition: 400V, 15A, 5Ohm, 15V Switching Energy: 130µJ (on), 120µJ (off) Td (on/off) @ 25°C: 8ns/29ns IGBT Type: PT Supplier Device Package: TO-247 [B] |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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APT24F50B | Microchip Technology |
Description: MOSFET N-CH 500V 24A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V Power Dissipation (Max): 335W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 25 V |
на замовлення 274 шт: термін постачання 21-31 дні (днів) |
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APT30DQ100BG | Microchip Technology |
Description: DIODE GEN PURP 1KV 30A TO247Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 295 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
на замовлення 679 шт: термін постачання 21-31 дні (днів) |
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APT30DQ60BG | Microchip Technology |
Description: DIODE STD 600V 30A TO247 [B]Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
на замовлення 2060 шт: термін постачання 21-31 дні (днів) |
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APT30F50B | Microchip Technology |
Description: MOSFET N-CH 500V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V Power Dissipation (Max): 415W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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APT30GP60BG | Microchip Technology |
Description: IGBT PT 600V 100A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 13ns/55ns Switching Energy: 260µJ (on), 250µJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 463 W |
товару немає в наявності |
Мінімальне замовлення: 70 шт В кошику од. на суму грн. | ||||||
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APT30GP60BDQ1G | Microchip Technology |
Description: IGBT PT 600V 100A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 13ns/55ns Switching Energy: 260µJ (on), 250µJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 463 W |
на замовлення 77 шт: термін постачання 21-31 дні (днів) |
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APT31M100L | Microchip Technology |
Description: MOSFET N-CH 1000V 32A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 16A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT40GP60B2DQ2G | Microchip Technology |
Description: IGBT PT 600V 100APackaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A IGBT Type: PT Td (on/off) @ 25°C: 20ns/64ns Switching Energy: 385µJ (on), 350µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 135 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 543 W |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | ||||||
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APT42F50B | Microchip Technology |
Description: MOSFET N-CH 500V 42A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V |
на замовлення 66 шт: термін постачання 21-31 дні (днів) |
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APT56M60B2 | Microchip Technology |
Description: MOSFET N-CH 600V 60A TO247Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | ||||||
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APT60DQ120BG | Microchip Technology |
Description: DIODE STD 1200V 60A TO247 [B]Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 [B] Current - Average Rectified (Io): 60A Technology: Standard Reverse Recovery Time (trr): 320 ns Package / Case: TO-247-2 Packaging: Tube Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole |
на замовлення 91 шт: термін постачання 21-31 дні (днів) |
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APT60DQ60BG | Microchip Technology |
Description: DIODE STD 600V 60A TO247 [B]Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 [B] Current - Average Rectified (Io): 60A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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AT89OCD-01 | Microchip Technology |
Description: USB EMULATOR FOR AT8XC51 MCU Packaging: Bulk For Use With/Related Products: AT89C51Rx2 Type: Emulator (In-Circuit/In-System) Contents: Board(s), Cable(s) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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QT60160-ISG | Microchip Technology |
Description: IC TOUCH SENSOR 16KEY 32-QFNDigiKey Programmable: Not Verified Proximity Detection: No Supplier Device Package: 32-QFN (5x5) Resolution: 10 b Number of Inputs: Up to 16 Current - Supply: 4.6mA Voltage - Supply: 1.8V ~ 5.25V Operating Temperature: -40°C ~ 85°C Type: Buttons Interface: I2C, SPI Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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QT1081-ISG | Microchip Technology |
Description: SENSOR IC QTOUCH 8 KEY 32QFNDigiKey Programmable: Not Verified Proximity Detection: Yes Supplier Device Package: 32-QFN (5x5) Resolution: 8 b Number of Inputs: Up to 8 Current - Supply: 5.6mA Voltage - Supply: 2.8V ~ 5V Operating Temperature: -40°C ~ 85°C Type: Buttons Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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QT60160-ISG | Microchip Technology |
Description: IC TOUCH SENSOR 16KEY 32-QFNDigiKey Programmable: Not Verified Proximity Detection: No Supplier Device Package: 32-QFN (5x5) Resolution: 10 b Number of Inputs: Up to 16 Current - Supply: 4.6mA Voltage - Supply: 1.8V ~ 5.25V Operating Temperature: -40°C ~ 85°C Type: Buttons Interface: I2C, SPI Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 39442 шт: термін постачання 21-31 дні (днів) |
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JANTX1N5615 | Microchip Technology |
Description: DIODE STANDARD 200V 1A AXIALPackaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: MIL-PRF-19500/429 |
на замовлення 1939 шт: термін постачання 21-31 дні (днів) |
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AT45DB021D-MH-Y | Microchip Technology |
Description: IC FLASH 2MBIT SPI 66MHZ 8UDFNDigiKey Programmable: Not Verified Memory Organization: 264 Bytes x 1024 pages Memory Interface: SPI Write Cycle Time - Word, Page: 4ms Supplier Device Package: 8-UDFN (5x6) Memory Format: FLASH Clock Frequency: 66 MHz Technology: FLASH Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TC) Memory Type: Non-Volatile Memory Size: 2Mbit Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 1960 шт В кошику од. на суму грн. | ||||||
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AT45DB021D-SH-B | Microchip Technology |
Description: IC FLASH 2MBIT SPI 66MHZ 8SOICMemory Type: Non-Volatile Memory Size: 2Mbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Packaging: Tube DigiKey Programmable: Verified Memory Organization: 264 Bytes x 1024 pages Memory Interface: SPI Write Cycle Time - Word, Page: 4ms Supplier Device Package: 8-SOIC Memory Format: FLASH Clock Frequency: 66 MHz Technology: FLASH Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TC) |
товару немає в наявності |
Мінімальне замовлення: 2090 шт В кошику од. на суму грн. | ||||||
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AT45DB021D-SSH-B | Microchip Technology |
Description: IC FLASH 2MBIT SPI 66MHZ 8SOICMemory Format: FLASH Clock Frequency: 66 MHz Technology: FLASH Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TC) Memory Type: Non-Volatile Memory Size: 2Mbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube DigiKey Programmable: Verified Memory Organization: 264 Bytes x 1024 pages Memory Interface: SPI Write Cycle Time - Word, Page: 4ms Supplier Device Package: 8-SOIC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||
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MICRF600DEV1 | Microchip Technology |
Description: KIT DEV RADIOWIRE 902-928MHZPackaging: Bulk For Use With/Related Products: MICRF600 Frequency: 850MHz ~ 950MHz Type: Transceiver, ISM Supplied Contents: Board(s), Cable(s), Accessories |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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MICRF505DEV1 | Microchip Technology |
Description: KIT DEV RADIOWIRE 850-950MHZPackaging: Bulk For Use With/Related Products: MICRF505 Frequency: 850MHz ~ 950MHz Type: Transceiver, ISM Contents: Board(s), Cable(s), Accessories Utilized IC / Part: MICRF505 Supplied Contents: Board(s), Cable(s), Accessories Part Status: Discontinued at Digi-Key |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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APL1001J | Microchip Technology |
Description: MOSFET N-CH 1000V 18A ISOTOPPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APL502B2G | Microchip Technology |
Description: MOSFET N-CH 500V 58A T-MAXPackaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 29A, 12V Power Dissipation (Max): 730W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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APL502J | Microchip Technology |
Description: MOSFET N-CH 500V 52A ISOTOPPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 26A, 12V Power Dissipation (Max): 568W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
на замовлення 64 шт: термін постачання 21-31 дні (днів) |
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APL502LG | Microchip Technology |
Description: MOSFET N-CH 500V 58A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 29A, 12V Power Dissipation (Max): 730W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 (L) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
на замовлення 85 шт: термін постачання 21-31 дні (днів) |
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APL602B2G | Microchip Technology |
Description: MOSFET N-CH 600V 49A T-MAXPackaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V Power Dissipation (Max): 730W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||
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APL602J | Microchip Technology |
Description: MOSFET N-CH 600V 43A ISOTOPPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 21.5A, 12V Power Dissipation (Max): 565W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||
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APL602LG | Microchip Technology |
Description: MOSFET N-CH 600V 49A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V Power Dissipation (Max): 730W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||
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APT10M25BVRG | Microchip Technology |
Description: MOSFET N-CH 100V 75A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 60 шт В кошику од. на суму грн. | ||||||
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APT11F80B | Microchip Technology |
Description: MOSFET N-CH 800V 12A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V Power Dissipation (Max): 337W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2471 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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APT1201R2BFLLG | Microchip Technology |
Description: MOSFET N-CH 1200V 12A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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APT12031JFLL | Microchip Technology |
Description: MOSFET N-CH 1200V 30A ISOTOPPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 15A, 10V Power Dissipation (Max): 690AW (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
| MA180016 |
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Виробник: Microchip Technology
Description: MODULE PLUG-IN PICDEM HPC BLANK
Accessory Type: Plug-In Module (PIM)
For Use With/Related Products: PIC18FxxJxx
Packaging: Bulk
Description: MODULE PLUG-IN PICDEM HPC BLANK
Accessory Type: Plug-In Module (PIM)
For Use With/Related Products: PIC18FxxJxx
Packaging: Bulk
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2353.71 грн |
| MA300016 |
Виробник: Microchip Technology
Description: MODULE PLUG-IN DSPICDEM 80TQFP
Accessory Type: Plug-In Module (PIM)
For Use With/Related Products: dsPIC30F2023
Packaging: Bulk
Description: MODULE PLUG-IN DSPICDEM 80TQFP
Accessory Type: Plug-In Module (PIM)
For Use With/Related Products: dsPIC30F2023
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| PCM18XP1 |
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Виробник: Microchip Technology
Description: MODULE PROC18F4580/4680,1/2680,1
Part Status: Obsolete
Accessory Type: Processor Module
For Use With/Related Products: ICE2000
Packaging: Bulk
Description: MODULE PROC18F4580/4680,1/2680,1
Part Status: Obsolete
Accessory Type: Processor Module
For Use With/Related Products: ICE2000
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| AT24C16B-TH-T |
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Виробник: Microchip Technology
Description: IC EEPROM 16KBIT I2C 1MHZ 8TSSOP
Description: IC EEPROM 16KBIT I2C 1MHZ 8TSSOP
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| AT24C16BN-SH-T |
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Виробник: Microchip Technology
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC
Description: IC EEPROM 16KBIT I2C 1MHZ 8SOIC
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| MIC4103YM |
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Виробник: Microchip Technology
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9V ~ 16V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 118 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 6ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 3V, 8V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9V ~ 16V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 118 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 6ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 3V, 8V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
на замовлення 2008 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.91 грн |
| 25+ | 164.84 грн |
| 100+ | 150.24 грн |
| MIC4104YM |
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Виробник: Microchip Technology
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9V ~ 16V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 118 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 6ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9V ~ 16V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 118 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 6ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 170.10 грн |
| 25+ | 136.16 грн |
| 100+ | 123.73 грн |
| MIC4722YML-TR |
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Виробник: Microchip Technology
Description: IC REG BUCK ADJ 3A 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.7MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: No
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 1V
Description: IC REG BUCK ADJ 3A 12MLF
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad, 12-MLF®
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.7MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLF™ (4x4)
Synchronous Rectifier: No
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 1V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| MIC5232-1.2YML-TR |
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Виробник: Microchip Technology
Description: IC REG LINEAR 1.2V 10MA 6MLF
Protection Features: Reverse Polarity
Voltage Dropout (Max): 0.3V @ 10mA
PSRR: 55dB ~ 35dB (10Hz ~ 1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 6-DFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 7V
Current - Quiescent (Iq): 3 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 10mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-VDFN Exposed Pad, 6-MLF®
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 1.2V 10MA 6MLF
Protection Features: Reverse Polarity
Voltage Dropout (Max): 0.3V @ 10mA
PSRR: 55dB ~ 35dB (10Hz ~ 1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 6-DFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 7V
Current - Quiescent (Iq): 3 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 10mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-VDFN Exposed Pad, 6-MLF®
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| MIC5301-2.85YD5-TR |
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Виробник: Microchip Technology
Description: IC REG LIN 2.85V 150MA TSOT23-5
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.1V @ 150mA
PSRR: 75dB ~ 50dB (1kHz ~ 20kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.85V
Supplier Device Package: TSOT-23-5
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 120 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Description: IC REG LIN 2.85V 150MA TSOT23-5
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.1V @ 150mA
PSRR: 75dB ~ 50dB (1kHz ~ 20kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.85V
Supplier Device Package: TSOT-23-5
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 120 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SY58603UMG-TR |
![]() |
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SY58604UMG-TR |
![]() |
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Part Status: Active
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Part Status: Active
Frequency - Max: 3 GHz
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SY58605UMG-TR |
![]() |
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 2.625V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 2.625V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 321.07 грн |
| SY58606UMG |
![]() |
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:2 3GHZ 16MLF
Frequency - Max: 3 GHz
Supplier Device Package: 16-MLF® (3x3)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:2
Voltage - Supply: 2.375V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: CML, LVDS, LVPECL
Type: Fanout Buffer (Distribution)
Output: CML
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 16-VFQFN Exposed Pad, 16-MLF®
Packaging: Tube
Description: IC CLK BUFFER 1:2 3GHZ 16MLF
Frequency - Max: 3 GHz
Supplier Device Package: 16-MLF® (3x3)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:2
Voltage - Supply: 2.375V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: CML, LVDS, LVPECL
Type: Fanout Buffer (Distribution)
Output: CML
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 16-VFQFN Exposed Pad, 16-MLF®
Packaging: Tube
на замовлення 94 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 458.87 грн |
| 25+ | 367.86 грн |
| SY58607UMG |
![]() |
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:2 3GHZ 16MLF
Frequency - Max: 3 GHz
Supplier Device Package: 16-MLF® (3x3)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:2
Voltage - Supply: 2.375V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: CML, LVDS, LVPECL
Type: Fanout Buffer (Distribution)
Output: LVPECL
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 16-VFQFN Exposed Pad, 16-MLF®
Packaging: Tray
Description: IC CLK BUFFER 1:2 3GHZ 16MLF
Frequency - Max: 3 GHz
Supplier Device Package: 16-MLF® (3x3)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:2
Voltage - Supply: 2.375V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: CML, LVDS, LVPECL
Type: Fanout Buffer (Distribution)
Output: LVPECL
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 16-VFQFN Exposed Pad, 16-MLF®
Packaging: Tray
на замовлення 362 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 458.87 грн |
| 25+ | 367.86 грн |
| 100+ | 334.79 грн |
| SY89645LK4G |
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Виробник: Microchip Technology
Description: IC CLK BUFFER 1:4 650MHZ 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
Part Status: Active
Frequency - Max: 650 MHz
Description: IC CLK BUFFER 1:4 650MHZ 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
Part Status: Active
Frequency - Max: 650 MHz
на замовлення 1158 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 352.07 грн |
| 25+ | 281.86 грн |
| 100+ | 256.35 грн |
| SY88289ALMG |
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Виробник: Microchip Technology
Description: IC POST AMP 3.3V 3.2GBPS 16-MLF
Description: IC POST AMP 3.3V 3.2GBPS 16-MLF
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| SY88289CLMG |
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Виробник: Microchip Technology
Description: IC POST AMP 3.3V 3.2GBPS 16-MLF
Description: IC POST AMP 3.3V 3.2GBPS 16-MLF
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| SY88345BLEY |
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Виробник: Microchip Technology
Description: IC POST AMP 3.3V 3.2GBPS 10-MSOP
Description: IC POST AMP 3.3V 3.2GBPS 10-MSOP
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| SY58603UMG-TR |
![]() |
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
на замовлення 529 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 424.06 грн |
| 25+ | 402.60 грн |
| SY58604UMG-TR |
![]() |
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Part Status: Active
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Part Status: Active
Frequency - Max: 3 GHz
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 424.06 грн |
| 25+ | 339.39 грн |
| SY58605UMG-TR |
![]() |
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 2.625V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
Description: IC CLK BUFFER 1:1 3GHZ 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer/Driver
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 2.625V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-MLF® (2x2)
Frequency - Max: 3 GHz
на замовлення 5751 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 424.85 грн |
| 25+ | 340.22 грн |
| KSZ8893MQL-EVAL |
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Виробник: Microchip Technology
Description: EVAL BOARD FOR KSZ8893MQL
Packaging: Bulk
Embedded: No
Secondary Attributes: MII, RMII, SNI, Auto MDI, MDI-X Auto Polarity Correction, LinkMD
Primary Attributes: 3 Ports, 100BASE-TX/100BASE-FX/10BASE-T, Managed
Supplied Contents: Board(s)
Utilized IC / Part: KSZ8893MQL
Type: Interface
Function: Ethernet Controller (PHY and MAC)
Contents: Board(s)
Description: EVAL BOARD FOR KSZ8893MQL
Packaging: Bulk
Embedded: No
Secondary Attributes: MII, RMII, SNI, Auto MDI, MDI-X Auto Polarity Correction, LinkMD
Primary Attributes: 3 Ports, 100BASE-TX/100BASE-FX/10BASE-T, Managed
Supplied Contents: Board(s)
Utilized IC / Part: KSZ8893MQL
Type: Interface
Function: Ethernet Controller (PHY and MAC)
Contents: Board(s)
товару немає в наявності
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од. на суму грн.
| APT14M100B |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 14A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 1000V 14A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 80 шт
В кошику
од. на суму грн.
| APT15DQ100KG |
![]() |
Виробник: Microchip Technology
Description: DIODE STD 1000V 15A TO220 [K]
Description: DIODE STD 1000V 15A TO220 [K]
на замовлення 677 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.01 грн |
| 100+ | 40.90 грн |
| APT15DQ60KG |
![]() |
Виробник: Microchip Technology
Description: DIODE GP 600V 15A TO220
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220 [K]
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GP 600V 15A TO220
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220 [K]
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 19 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 1275 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.59 грн |
| 100+ | 49.17 грн |
| APT15GP60BDQ1G |
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Виробник: Microchip Technology
Description: IGBT PT 600V 56A TO247
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 250 W
Current - Collector Pulsed (Icm): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Part Status: Active
Gate Charge: 55 nC
Test Condition: 400V, 15A, 5Ohm, 15V
Switching Energy: 130µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 8ns/29ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Description: IGBT PT 600V 56A TO247
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 250 W
Current - Collector Pulsed (Icm): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Part Status: Active
Gate Charge: 55 nC
Test Condition: 400V, 15A, 5Ohm, 15V
Switching Energy: 130µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 8ns/29ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 406.66 грн |
| 100+ | 318.29 грн |
| APT24F50B |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 25 V
Description: MOSFET N-CH 500V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 25 V
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 362.35 грн |
| 100+ | 282.80 грн |
| APT30DQ100BG |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 679 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.35 грн |
| 100+ | 88.10 грн |
| APT30DQ60BG |
![]() |
Виробник: Microchip Technology
Description: DIODE STD 600V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE STD 600V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 2060 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.82 грн |
| 100+ | 69.31 грн |
| APT30F50B |
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Виробник: Microchip Technology
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V
Power Dissipation (Max): 415W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 14A, 10V
Power Dissipation (Max): 415W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 25 V
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 397.16 грн |
| APT30GP60BG |
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Виробник: Microchip Technology
Description: IGBT PT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 463 W
Description: IGBT PT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 463 W
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Мінімальне замовлення: 70 шт
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| APT30GP60BDQ1G |
![]() |
Виробник: Microchip Technology
Description: IGBT PT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 463 W
Description: IGBT PT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 463 W
на замовлення 77 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 589.42 грн |
| APT31M100L |
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Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 32A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Description: MOSFET N-CH 1000V 32A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
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| APT40GP60B2DQ2G |
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Виробник: Microchip Technology
Description: IGBT PT 600V 100A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/64ns
Switching Energy: 385µJ (on), 350µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 543 W
Description: IGBT PT 600V 100A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/64ns
Switching Energy: 385µJ (on), 350µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 135 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 543 W
товару немає в наявності
Мінімальне замовлення: 40 шт
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| APT42F50B |
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Виробник: Microchip Technology
Description: MOSFET N-CH 500V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V
Description: MOSFET N-CH 500V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V
на замовлення 66 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 748.44 грн |
| APT56M60B2 |
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Виробник: Microchip Technology
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 40 шт
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| APT60DQ120BG |
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Виробник: Microchip Technology
Description: DIODE STD 1200V 60A TO247 [B]
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 320 ns
Package / Case: TO-247-2
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Description: DIODE STD 1200V 60A TO247 [B]
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 320 ns
Package / Case: TO-247-2
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.69 грн |
| APT60DQ60BG |
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Виробник: Microchip Technology
Description: DIODE STD 600V 60A TO247 [B]
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE STD 600V 60A TO247 [B]
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.63 грн |
| 100+ | 95.77 грн |
| AT89OCD-01 |
Виробник: Microchip Technology
Description: USB EMULATOR FOR AT8XC51 MCU
Packaging: Bulk
For Use With/Related Products: AT89C51Rx2
Type: Emulator (In-Circuit/In-System)
Contents: Board(s), Cable(s)
Part Status: Obsolete
Description: USB EMULATOR FOR AT8XC51 MCU
Packaging: Bulk
For Use With/Related Products: AT89C51Rx2
Type: Emulator (In-Circuit/In-System)
Contents: Board(s), Cable(s)
Part Status: Obsolete
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| QT60160-ISG |
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Виробник: Microchip Technology
Description: IC TOUCH SENSOR 16KEY 32-QFN
DigiKey Programmable: Not Verified
Proximity Detection: No
Supplier Device Package: 32-QFN (5x5)
Resolution: 10 b
Number of Inputs: Up to 16
Current - Supply: 4.6mA
Voltage - Supply: 1.8V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
Type: Buttons
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC TOUCH SENSOR 16KEY 32-QFN
DigiKey Programmable: Not Verified
Proximity Detection: No
Supplier Device Package: 32-QFN (5x5)
Resolution: 10 b
Number of Inputs: Up to 16
Current - Supply: 4.6mA
Voltage - Supply: 1.8V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
Type: Buttons
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 160.68 грн |
| QT1081-ISG |
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Виробник: Microchip Technology
Description: SENSOR IC QTOUCH 8 KEY 32QFN
DigiKey Programmable: Not Verified
Proximity Detection: Yes
Supplier Device Package: 32-QFN (5x5)
Resolution: 8 b
Number of Inputs: Up to 8
Current - Supply: 5.6mA
Voltage - Supply: 2.8V ~ 5V
Operating Temperature: -40°C ~ 85°C
Type: Buttons
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: SENSOR IC QTOUCH 8 KEY 32QFN
DigiKey Programmable: Not Verified
Proximity Detection: Yes
Supplier Device Package: 32-QFN (5x5)
Resolution: 8 b
Number of Inputs: Up to 8
Current - Supply: 5.6mA
Voltage - Supply: 2.8V ~ 5V
Operating Temperature: -40°C ~ 85°C
Type: Buttons
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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| QT60160-ISG |
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Виробник: Microchip Technology
Description: IC TOUCH SENSOR 16KEY 32-QFN
DigiKey Programmable: Not Verified
Proximity Detection: No
Supplier Device Package: 32-QFN (5x5)
Resolution: 10 b
Number of Inputs: Up to 16
Current - Supply: 4.6mA
Voltage - Supply: 1.8V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
Type: Buttons
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC TOUCH SENSOR 16KEY 32-QFN
DigiKey Programmable: Not Verified
Proximity Detection: No
Supplier Device Package: 32-QFN (5x5)
Resolution: 10 b
Number of Inputs: Up to 16
Current - Supply: 4.6mA
Voltage - Supply: 1.8V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
Type: Buttons
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 39442 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 193.04 грн |
| 25+ | 171.48 грн |
| 100+ | 154.73 грн |
| JANTX1N5615 |
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Виробник: Microchip Technology
Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: MIL-PRF-19500/429
Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: MIL-PRF-19500/429
на замовлення 1939 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 341.78 грн |
| 100+ | 305.84 грн |
| AT45DB021D-MH-Y |
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Виробник: Microchip Technology
Description: IC FLASH 2MBIT SPI 66MHZ 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 264 Bytes x 1024 pages
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Supplier Device Package: 8-UDFN (5x6)
Memory Format: FLASH
Clock Frequency: 66 MHz
Technology: FLASH
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Packaging: Tray
Description: IC FLASH 2MBIT SPI 66MHZ 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 264 Bytes x 1024 pages
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Supplier Device Package: 8-UDFN (5x6)
Memory Format: FLASH
Clock Frequency: 66 MHz
Technology: FLASH
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 1960 шт
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| AT45DB021D-SH-B |
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Виробник: Microchip Technology
Description: IC FLASH 2MBIT SPI 66MHZ 8SOIC
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tube
DigiKey Programmable: Verified
Memory Organization: 264 Bytes x 1024 pages
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 66 MHz
Technology: FLASH
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
Description: IC FLASH 2MBIT SPI 66MHZ 8SOIC
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tube
DigiKey Programmable: Verified
Memory Organization: 264 Bytes x 1024 pages
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 66 MHz
Technology: FLASH
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
товару немає в наявності
Мінімальне замовлення: 2090 шт
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| AT45DB021D-SSH-B |
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Виробник: Microchip Technology
Description: IC FLASH 2MBIT SPI 66MHZ 8SOIC
Memory Format: FLASH
Clock Frequency: 66 MHz
Technology: FLASH
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Verified
Memory Organization: 264 Bytes x 1024 pages
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Supplier Device Package: 8-SOIC
Description: IC FLASH 2MBIT SPI 66MHZ 8SOIC
Memory Format: FLASH
Clock Frequency: 66 MHz
Technology: FLASH
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Verified
Memory Organization: 264 Bytes x 1024 pages
Memory Interface: SPI
Write Cycle Time - Word, Page: 4ms
Supplier Device Package: 8-SOIC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| MICRF600DEV1 |
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Виробник: Microchip Technology
Description: KIT DEV RADIOWIRE 902-928MHZ
Packaging: Bulk
For Use With/Related Products: MICRF600
Frequency: 850MHz ~ 950MHz
Type: Transceiver, ISM
Supplied Contents: Board(s), Cable(s), Accessories
Description: KIT DEV RADIOWIRE 902-928MHZ
Packaging: Bulk
For Use With/Related Products: MICRF600
Frequency: 850MHz ~ 950MHz
Type: Transceiver, ISM
Supplied Contents: Board(s), Cable(s), Accessories
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17757.65 грн |
| MICRF505DEV1 |
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Виробник: Microchip Technology
Description: KIT DEV RADIOWIRE 850-950MHZ
Packaging: Bulk
For Use With/Related Products: MICRF505
Frequency: 850MHz ~ 950MHz
Type: Transceiver, ISM
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: MICRF505
Supplied Contents: Board(s), Cable(s), Accessories
Part Status: Discontinued at Digi-Key
Description: KIT DEV RADIOWIRE 850-950MHZ
Packaging: Bulk
For Use With/Related Products: MICRF505
Frequency: 850MHz ~ 950MHz
Type: Transceiver, ISM
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: MICRF505
Supplied Contents: Board(s), Cable(s), Accessories
Part Status: Discontinued at Digi-Key
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 16354.92 грн |
| APL1001J |
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Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 18A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Description: MOSFET N-CH 1000V 18A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
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В кошику
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| APL502B2G |
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Виробник: Microchip Technology
Description: MOSFET N-CH 500V 58A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 29A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET N-CH 500V 58A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 29A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3687.61 грн |
| APL502J |
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Виробник: Microchip Technology
Description: MOSFET N-CH 500V 52A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 26A, 12V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET N-CH 500V 52A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 26A, 12V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
на замовлення 64 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4042.05 грн |
| APL502LG |
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Виробник: Microchip Technology
Description: MOSFET N-CH 500V 58A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 29A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET N-CH 500V 58A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 29A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
на замовлення 85 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3716.88 грн |
| APL602B2G |
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Виробник: Microchip Technology
Description: MOSFET N-CH 600V 49A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET N-CH 600V 49A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| APL602J |
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Виробник: Microchip Technology
Description: MOSFET N-CH 600V 43A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 21.5A, 12V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET N-CH 600V 43A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 21.5A, 12V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| APL602LG |
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Виробник: Microchip Technology
Description: MOSFET N-CH 600V 49A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET N-CH 600V 49A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V
Power Dissipation (Max): 730W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| APT10M25BVRG |
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Виробник: Microchip Technology
Description: MOSFET N-CH 100V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Description: MOSFET N-CH 100V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 60 шт
В кошику
од. на суму грн.
| APT11F80B |
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Виробник: Microchip Technology
Description: MOSFET N-CH 800V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2471 pF @ 25 V
Description: MOSFET N-CH 800V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2471 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| APT1201R2BFLLG |
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Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 6A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
Description: MOSFET N-CH 1200V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 6A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1808.60 грн |
| 100+ | 1413.99 грн |
| APT12031JFLL |
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Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 15A, 10V
Power Dissipation (Max): 690AW (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
Description: MOSFET N-CH 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 15A, 10V
Power Dissipation (Max): 690AW (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.




















