Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (281273) > Сторінка 378 з 4688
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
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APT25GP120BG | Microchip Technology |
 Description: IGBT PT 1200V 69A TO247Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Current - Collector Pulsed (Icm): 90 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 69 A Gate Charge: 110 nC Test Condition: 600V, 25A, 5Ohm, 15V Switching Energy: 500µJ (on), 438µJ (off) Td (on/off) @ 25°C: 12ns/70ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 417 W |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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APT25GP90BDQ1G | Microchip Technology |
Description: IGBT PT 900V 72A TO247 Power - Max: 417 W Current - Collector Pulsed (Icm): 110 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 72 A Gate Charge: 110 nC Test Condition: 600V, 40A, 4.3Ohm, 15V Switching Energy: 370µJ (off) Td (on/off) @ 25°C: 13ns/55ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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APT25GP90BG | Microchip Technology |
Description: IGBT PT 900V 72A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 13ns/55ns Switching Energy: 370µJ (off) Test Condition: 600V, 25A, 5Ohm, 15V Gate Charge: 110 nC Current - Collector (Ic) (Max): 72 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 110 A Power - Max: 417 W |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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APT25GT120BRDQ2G | Microchip Technology |
Description: IGBT NPT 1200V 54A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 14ns/150ns Switching Energy: 930µJ (on), 720µJ (off) Test Condition: 800V, 25A, 5Ohm, 15V Gate Charge: 170 nC Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 347 W |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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APT25GT120BRG | Microchip Technology |
Description: IGBT NPT 1200V 54A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 14ns/150ns Switching Energy: 930µJ (on), 720µJ (off) Test Condition: 800V, 25A, 5Ohm, 15V Gate Charge: 170 nC Part Status: Active Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 347 W |
на замовлення 1603 шт: термін постачання 21-31 дні (днів) |
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APT25M100J | Microchip Technology |
Description: MOSFET N-CH 1000V 25A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V Power Dissipation (Max): 545W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||
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APT26F120B2 | Microchip Technology |
Description: MOSFET N-CH 1200V 27A T-MAX Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: T-MAX™ Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||
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APT26F120L | Microchip Technology |
Description: MOSFET N-CH 1200V 27A TO264 Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-264 [L] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||
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APT28M120B2 | Microchip Technology |
Description: MOSFET N-CH 1200V 29A T-MAX Supplier Device Package: T-MAX™ [B2] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V |
на замовлення 56 шт: термін постачання 21-31 дні (днів) |
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APT28M120L | Microchip Technology |
Description: MOSFET N-CH 1200V 29A TO264 |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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APT29F100B2 | Microchip Technology |
Description: MOSFET N-CH 1000V 30A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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APT29F100L | Microchip Technology |
Description: MOSFET N-CH 1000V 30A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 460mOhm @ 16A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | ||||
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APT29F80J | Microchip Technology |
Description: MOSFET N-CH 800V 31A ISOTOP |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||
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APT2X100D40J | Microchip Technology |
Description: DIODE MODULE 400V 100A ISOTOP |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | ||||
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APT2X100D60J | Microchip Technology |
Description: DIODE MODULE 600V 100A ISOTOP |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||
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APT2X100DQ120J | Microchip Technology |
Description: DIODE MODULE 1.2KV 100A ISOTOP |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||
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APT2X100DQ60J | Microchip Technology |
Description: DIODE MODULE 600V 100A ISOTOP |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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APT2X101D100J | Microchip Technology |
Description: DIODE MODULE GP 1000V 95A ISOTOP Current - Reverse Leakage @ Vr: 250 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 95A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 160 шт: термін постачання 21-31 дні (днів) |
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APT2X101D120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 93A ISOTOP Current - Reverse Leakage @ Vr: 250 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 93A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 420 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 135 шт: термін постачання 21-31 дні (днів) |
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APT2X101D20J | Microchip Technology |
Description: DIODE MODULE 200V 100A ISOTOP |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||
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APT2X101D40J | Microchip Technology |
Description: DIODE MODULE GP 400V 100A ISOTOP Current - Reverse Leakage @ Vr: 500 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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APT2X101D60J | Microchip Technology |
Description: DIODE MODULE GP 600V 100A ISOTOP Current - Reverse Leakage @ Vr: 250 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 180 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 86 шт: термін постачання 21-31 дні (днів) |
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APT2X101DQ100J | Microchip Technology |
Description: DIODE MODULE GP 1KV 100A ISOTOP Current - Reverse Leakage @ Vr: 100 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 100 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 290 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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APT2X101DQ120J | Microchip Technology |
Description: DIODE MOD GP 1200V 100A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 385 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ISOTOP® Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 100 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 103 шт: термін постачання 21-31 дні (днів) |
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APT2X101DQ60J | Microchip Technology |
Description: DIODE MODULE GP 600V 100A ISOTOP Current - Reverse Leakage @ Vr: 25 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 100 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 100A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 160 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 84 шт: термін постачання 21-31 дні (днів) |
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APT2X101S20J | Microchip Technology |
Description: DIODE MOD SCHOT 200V 120A ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: ISOTOP® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A Current - Reverse Leakage @ Vr: 2 mA @ 200 V |
на замовлення 220 шт: термін постачання 21-31 дні (днів) |
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APT2X30D120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 30A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ISOTOP® Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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APT2X30D20J | Microchip Technology |
Description: DIODE MODULE GP 200V 30A ISOTOP Current - Reverse Leakage @ Vr: 250 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 24 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||
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APT2X30D30J | Microchip Technology |
Description: DIODE MODULE 300V 30A ISOTOP |
товару немає в наявності |
Мінімальне замовлення: 18 шт В кошику од. на суму грн. | ||||
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APT2X30D60J | Microchip Technology |
Description: DIODE MODULE GP 600V 30A ISOTOP Package / Case: SOT-227-4, miniBLOC Packaging: Tube Current - Reverse Leakage @ Vr: 250 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 85 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||
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APT2X30DQ60J | Microchip Technology |
Description: DIODE MODULE GP 600V 30A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 105 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||
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APT2X31D120J | Microchip Technology |
Description: DIODE MODULE 1.2KV 30A ISOTOP Current - Reverse Leakage @ Vr: 250 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 370 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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APT2X31D40J | Microchip Technology |
Description: DIODE MODULE GP 400V 30A ISOTOP Current - Reverse Leakage @ Vr: 250 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 32 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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APT2X31D60J | Microchip Technology |
Description: DIODE MODULE 600V 30A ISOTOP Current - Reverse Leakage @ Vr: 250 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 85 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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APT2X31DQ120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 30A ISOTOP Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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APT2X31DQ60J | Microchip Technology |
Description: DIODE MODULE GP 600V 30A ISOTOP Current - Reverse Leakage @ Vr: 25 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 105 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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APT2X31S20J | Microchip Technology |
Description: DIODE MOD SCHOTT 200V 45A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 45A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
на замовлення 531 шт: термін постачання 21-31 дні (днів) |
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APT2X60D100J | Microchip Technology |
Description: DIODE MODULE GP 1000V 55A ISOTOP Current - Reverse Leakage @ Vr: 250 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1000 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 55A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 280 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||
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APT2X60D120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 53A ISOTOP Current - Reverse Leakage @ Vr: 250 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1200 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 53A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 400 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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APT2X60D60J | Microchip Technology |
Description: DIODE MODULE GP 600V 60A ISOTOP Current - Reverse Leakage @ Vr: 250 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Voltage - DC Reverse (Vr) (Max): 600 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 130 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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APT2X60DQ120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 60A ISOTOP Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1200 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 265 ns |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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APT2X60DQ60J | Microchip Technology |
Description: DIODE MODULE 600V 60A ISOTOP Current - Reverse Leakage @ Vr: 25 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 160 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||
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APT2X61D40J | Microchip Technology |
Description: DIODE MODULE GP 400V 60A ISOTOP Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Current - Reverse Leakage @ Vr: 250 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A Voltage - DC Reverse (Vr) (Max): 400 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 37 ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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APT2X61D60J | Microchip Technology |
Description: DIODE MODULE GP 600V 60A ISOTOP Voltage - DC Reverse (Vr) (Max): 600 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 130 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Current - Reverse Leakage @ Vr: 250 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A |
на замовлення 126 шт: термін постачання 21-31 дні (днів) |
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APT2X61DQ100J | Microchip Technology |
Description: DIODE MODULE GP 1000V 60A ISOTOP Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 235 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Supplier Device Package: ISOTOP® |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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APT2X61DQ120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 60A ISOTOP Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1200 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 265 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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APT2X61DQ60J | Microchip Technology |
Description: DIODE MODULE GP 600V 60A ISOTOP Current - Reverse Leakage @ Vr: 25 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A Voltage - DC Reverse (Vr) (Max): 600 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 160 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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APT2X61S20J | Microchip Technology |
Description: DIODE MOD SCHOTT 200V 75A ISOTOP Current - Reverse Leakage @ Vr: 1 mA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A Voltage - DC Reverse (Vr) (Max): 200 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 75A Diode Configuration: 2 Independent Technology: Schottky Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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APT30D100BCAG | Microchip Technology |
Description: DIODE ARRAY GP 1000V 18A TO247 Current - Reverse Leakage @ Vr: 250 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 [B] Current - Average Rectified (Io) (per Diode): 18A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 290 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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APT30D100BCTG | Microchip Technology |
Description: DIODE ARRAY GP 1000V 30A TO247 Current - Reverse Leakage @ Vr: 250 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 [B] Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 290 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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APT30D100BG | Microchip Technology |
Description: DIODE STANDARD 1000V 30A TO247 Current - Reverse Leakage @ Vr: 250 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 Current - Average Rectified (Io): 30A Technology: Standard Reverse Recovery Time (trr): 290 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
на замовлення 1083 шт: термін постачання 21-31 дні (днів) |
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APT30D100BHBG | Microchip Technology |
Description: DIODE ARRAY GP 1000V 18A TO247 Current - Reverse Leakage @ Vr: 250 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 [B] Current - Average Rectified (Io) (per Diode): 18A Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 290 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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APT30D120BCTG | Microchip Technology |
Description: DIODE ARRAY GP 1200V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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APT30D120BG | Microchip Technology |
Description: DIODE GEN PURP 1.2KV 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 165 шт: термін постачання 21-31 дні (днів) |
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APT30D120SG | Microchip Technology |
Description: DIODE GEN PURP 1.2KV 30A D3 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
товару немає в наявності |
Мінімальне замовлення: 150 шт В кошику од. на суму грн. | ||||
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APT30D20BCAG | Microchip Technology |
Description: DIODE ARRAY GP 200V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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APT30D20BCTG | Microchip Technology |
Description: DIODE ARRAY GP 200V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 120 шт В кошику од. на суму грн. | ||||
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APT30D20BG | Microchip Technology |
Description: DIODE STD 200V 30A TO247 [B] Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V |
на замовлення 354 шт: термін постачання 21-31 дні (днів) |
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APT30D30BG | Microchip Technology |
Description: DIODE GP 300V 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 300 V |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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APT30D40BCTG | Microchip Technology |
Description: DIODE ARRAY GP 400V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 120 шт В кошику од. на суму грн. |
| APT25GP120BG |
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Виробник: Microchip Technology
Description: IGBT PT 1200V 69A TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 69 A
Gate Charge: 110 nC
Test Condition: 600V, 25A, 5Ohm, 15V
Switching Energy: 500µJ (on), 438µJ (off)
Td (on/off) @ 25°C: 12ns/70ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 417 W
Description: IGBT PT 1200V 69A TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 69 A
Gate Charge: 110 nC
Test Condition: 600V, 25A, 5Ohm, 15V
Switching Energy: 500µJ (on), 438µJ (off)
Td (on/off) @ 25°C: 12ns/70ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 417 W
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 804.61 грн |
| APT25GP90BDQ1G |
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Виробник: Microchip Technology
Description: IGBT PT 900V 72A TO247
Power - Max: 417 W
Current - Collector Pulsed (Icm): 110 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 72 A
Gate Charge: 110 nC
Test Condition: 600V, 40A, 4.3Ohm, 15V
Switching Energy: 370µJ (off)
Td (on/off) @ 25°C: 13ns/55ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT PT 900V 72A TO247
Power - Max: 417 W
Current - Collector Pulsed (Icm): 110 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 72 A
Gate Charge: 110 nC
Test Condition: 600V, 40A, 4.3Ohm, 15V
Switching Energy: 370µJ (off)
Td (on/off) @ 25°C: 13ns/55ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 648.75 грн |
| APT25GP90BG |
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Виробник: Microchip Technology
Description: IGBT PT 900V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 370µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 417 W
Description: IGBT PT 900V 72A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 370µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 417 W
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 615.52 грн |
| APT25GT120BRDQ2G |
|
Виробник: Microchip Technology
Description: IGBT NPT 1200V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/150ns
Switching Energy: 930µJ (on), 720µJ (off)
Test Condition: 800V, 25A, 5Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 347 W
Description: IGBT NPT 1200V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/150ns
Switching Energy: 930µJ (on), 720µJ (off)
Test Condition: 800V, 25A, 5Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 347 W
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 584.67 грн |
| APT25GT120BRG |
|
Виробник: Microchip Technology
Description: IGBT NPT 1200V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/150ns
Switching Energy: 930µJ (on), 720µJ (off)
Test Condition: 800V, 25A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 347 W
Description: IGBT NPT 1200V 54A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/150ns
Switching Energy: 930µJ (on), 720µJ (off)
Test Condition: 800V, 25A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 347 W
на замовлення 1603 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 450.17 грн |
| 100+ | 352.24 грн |
| APT25M100J |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 25A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Power Dissipation (Max): 545W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
Description: MOSFET N-CH 1000V 25A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Power Dissipation (Max): 545W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| APT26F120B2 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 27A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: T-MAX™
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: MOSFET N-CH 1200V 27A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: T-MAX™
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| APT26F120L |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 27A TO264
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 1200V 27A TO264
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| APT28M120B2 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 29A T-MAX
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
Description: MOSFET N-CH 1200V 29A T-MAX
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
на замовлення 56 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1750.84 грн |
| APT28M120L |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 29A TO264
Description: MOSFET N-CH 1200V 29A TO264
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1995.31 грн |
| APT29F100B2 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 30A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Description: MOSFET N-CH 1000V 30A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APT29F100L |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 30A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Description: MOSFET N-CH 1000V 30A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 16A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 40 шт
В кошику
од. на суму грн.
| APT29F80J |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 31A ISOTOP
Description: MOSFET N-CH 800V 31A ISOTOP
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| APT2X100D40J |
|
Виробник: Microchip Technology
Description: DIODE MODULE 400V 100A ISOTOP
Description: DIODE MODULE 400V 100A ISOTOP
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| APT2X100D60J |
|
Виробник: Microchip Technology
Description: DIODE MODULE 600V 100A ISOTOP
Description: DIODE MODULE 600V 100A ISOTOP
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| APT2X100DQ120J |
|
Виробник: Microchip Technology
Description: DIODE MODULE 1.2KV 100A ISOTOP
Description: DIODE MODULE 1.2KV 100A ISOTOP
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| APT2X100DQ60J |
|
Виробник: Microchip Technology
Description: DIODE MODULE 600V 100A ISOTOP
Description: DIODE MODULE 600V 100A ISOTOP
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1706.54 грн |
| APT2X101D100J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 1000V 95A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 95A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 1000V 95A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 95A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2516.69 грн |
| 100+ | 1966.72 грн |
| APT2X101D120J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 93A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 93A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 420 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 1200V 93A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 93A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 420 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 135 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2760.37 грн |
| 100+ | 2159.13 грн |
| APT2X101D20J |
|
Виробник: Microchip Technology
Description: DIODE MODULE 200V 100A ISOTOP
Description: DIODE MODULE 200V 100A ISOTOP
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
| APT2X101D40J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 400V 100A ISOTOP
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 400V 100A ISOTOP
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1981.07 грн |
| APT2X101D60J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 100A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 600V 100A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 180 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2186.77 грн |
| APT2X101DQ100J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 1KV 100A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 1KV 100A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1843.41 грн |
| APT2X101DQ120J |
|
Виробник: Microchip Technology
Description: DIODE MOD GP 1200V 100A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE MOD GP 1200V 100A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 103 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1816.51 грн |
| 100+ | 1419.78 грн |
| APT2X101DQ60J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 100A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 600V 100A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1606.85 грн |
| APT2X101S20J |
|
Виробник: Microchip Technology
Description: DIODE MOD SCHOT 200V 120A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
Description: DIODE MOD SCHOT 200V 120A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1900.37 грн |
| 100+ | 1485.30 грн |
| APT2X30D120J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE MODULE GP 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1891.67 грн |
| 100+ | 1478.84 грн |
| APT2X30D20J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 24 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 24 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| APT2X30D30J |
|
Виробник: Microchip Technology
Description: DIODE MODULE 300V 30A ISOTOP
Description: DIODE MODULE 300V 30A ISOTOP
товару немає в наявності
Мінімальне замовлення: 18 шт
В кошику
од. на суму грн.
| APT2X30D60J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 30A ISOTOP
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Description: DIODE MODULE GP 600V 30A ISOTOP
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| APT2X30DQ60J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| APT2X31D120J |
|
Виробник: Microchip Technology
Description: DIODE MODULE 1.2KV 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 370 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE 1.2KV 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 370 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2230.29 грн |
| APT2X31D40J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 400V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 400V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1420.93 грн |
| APT2X31D60J |
|
Виробник: Microchip Technology
Description: DIODE MODULE 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1645.62 грн |
| APT2X31DQ120J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 1200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1526.15 грн |
| APT2X31DQ60J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 105 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 105 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1405.90 грн |
| APT2X31S20J |
|
Виробник: Microchip Technology
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
на замовлення 531 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1488.97 грн |
| 100+ | 1163.59 грн |
| APT2X60D100J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 1000V 55A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 55A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 280 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 1000V 55A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 55A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 280 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| APT2X60D120J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 53A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 53A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 1200V 53A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 53A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2454.98 грн |
| APT2X60D60J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1794.36 грн |
| APT2X60DQ120J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 60A ISOTOP
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 265 ns
Description: DIODE MODULE GP 1200V 60A ISOTOP
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 265 ns
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1693.09 грн |
| APT2X60DQ60J |
|
Виробник: Microchip Technology
Description: DIODE MODULE 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| APT2X61D40J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 400V 60A ISOTOP
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 37 ns
Description: DIODE MODULE GP 400V 60A ISOTOP
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 37 ns
товару немає в наявності
В кошику
од. на суму грн.
| APT2X61D60J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Description: DIODE MODULE GP 600V 60A ISOTOP
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
на замовлення 126 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1794.36 грн |
| 100+ | 1401.64 грн |
| APT2X61DQ100J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 1000V 60A ISOTOP
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 235 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Supplier Device Package: ISOTOP®
Description: DIODE MODULE GP 1000V 60A ISOTOP
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 235 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Supplier Device Package: ISOTOP®
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1659.07 грн |
| APT2X61DQ120J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 60A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 265 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 1200V 60A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 265 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1615.55 грн |
| APT2X61DQ60J |
|
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1568.08 грн |
| APT2X61S20J |
|
Виробник: Microchip Technology
Description: DIODE MOD SCHOTT 200V 75A ISOTOP
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 75A
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Description: DIODE MOD SCHOTT 200V 75A ISOTOP
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 75A
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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В кошику
од. на суму грн.
| APT30D100BCAG |
|
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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В кошику
од. на суму грн.
| APT30D100BCTG |
|
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARRAY GP 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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В кошику
од. на суму грн.
| APT30D100BG |
|
Виробник: Microchip Technology
Description: DIODE STANDARD 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE STANDARD 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
на замовлення 1083 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.85 грн |
| 100+ | 177.65 грн |
| APT30D100BHBG |
|
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 443.84 грн |
| 100+ | 346.43 грн |
| APT30D120BCTG |
|
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| APT30D120BG |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 184.34 грн |
| 100+ | 142.85 грн |
| APT30D120SG |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товару немає в наявності
Мінімальне замовлення: 150 шт
В кошику
од. на суму грн.
| APT30D20BCAG |
|
Виробник: Microchip Technology
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 459.67 грн |
| APT30D20BCTG |
|
Виробник: Microchip Technology
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 120 шт
В кошику
од. на суму грн.
| APT30D20BG |
|
Виробник: Microchip Technology
Description: DIODE STD 200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Description: DIODE STD 200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
на замовлення 354 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 223.11 грн |
| 100+ | 175.95 грн |
| APT30D30BG |
|
Виробник: Microchip Technology
Description: DIODE GP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
Description: DIODE GP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.66 грн |
| 100+ | 165.09 грн |
| APT30D40BCTG |
|
Виробник: Microchip Technology
Description: DIODE ARRAY GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Description: DIODE ARRAY GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 120 шт
В кошику
од. на суму грн.