Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (338316) > Сторінка 377 з 5639
Фото | Назва | Виробник | Інформація |
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APT2X101D100J | Microchip Technology |
Description: DIODE MODULE GP 1000V 95A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 95A Supplier Device Package: ISOTOP® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A Current - Reverse Leakage @ Vr: 250 µA @ 1000 V |
на замовлення 237 шт: термін постачання 21-31 дні (днів) |
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APT2X101D120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 93A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 420 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 93A Supplier Device Package: ISOTOP® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 329 шт: термін постачання 21-31 дні (днів) |
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APT2X101D20J | Microchip Technology | Description: DIODE MODULE 200V 100A ISOTOP |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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APT2X101D40J | Microchip Technology | Description: DIODE MODULE 400V 100A ISOTOP |
на замовлення 321 шт: термін постачання 21-31 дні (днів) |
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APT2X101D60J | Microchip Technology | Description: DIODE MODULE 600V 100A ISOTOP |
на замовлення 399 шт: термін постачання 21-31 дні (днів) |
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APT2X101DQ100J | Microchip Technology |
Description: DIODE MODULE 1KV 100A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 290 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ISOTOP® Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 100 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
товар відсутній |
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APT2X101DQ120J | Microchip Technology |
Description: DIODE MOD GP 1.2KV 100A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 385 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ISOTOP® Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 100 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 363 шт: термін постачання 21-31 дні (днів) |
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APT2X101DQ60J | Microchip Technology |
Description: DIODE MODULE GP 600V 100A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ISOTOP® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 100 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
на замовлення 163 шт: термін постачання 21-31 дні (днів) |
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APT2X101S20J | Microchip Technology |
Description: DIODE MOD SCHOT 200V 120A ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: ISOTOP® Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A Current - Reverse Leakage @ Vr: 2 mA @ 200 V |
на замовлення 535 шт: термін постачання 21-31 дні (днів) |
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APT2X30D120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 30A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ISOTOP® Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 695 шт: термін постачання 21-31 дні (днів) |
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APT2X30D30J | Microchip Technology | Description: DIODE MODULE 300V 30A ISOTOP |
товар відсутній |
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APT2X30D60J | Microchip Technology |
Description: DIODE MODULE 600V 30A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ISOTOP® Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
товар відсутній |
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APT2X30DQ60J | Microchip Technology |
Description: DIODE MODULE GP 600V 30A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 105 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товар відсутній |
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APT2X31D120J | Microchip Technology |
Description: DIODE MODULE 1.2KV 30A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ISOTOP® Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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APT2X31D40J | Microchip Technology |
Description: DIODE MODULE 400V 30A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ISOTOP® Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 400 V |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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APT2X31D60J | Microchip Technology |
Description: DIODE MODULE 600V 30A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ISOTOP® Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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APT2X31DQ120J | Microchip Technology |
Description: DIODE MODULE 1.2KV 30A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ISOTOP® Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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APT2X31DQ60J | Microchip Technology |
Description: DIODE MODULE 600V 30A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 105 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ISOTOP® Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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APT2X31S20J | Microchip Technology |
Description: DIODE MOD SCHOTT 200V 45A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 45A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
на замовлення 350 шт: термін постачання 21-31 дні (днів) |
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APT2X60D100J | Microchip Technology |
Description: DIODE MODULE GP 1000V 55A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 280 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 55A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 1000 V |
товар відсутній |
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APT2X60D120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 53A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 53A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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APT2X60D60J | Microchip Technology |
Description: DIODE MODULE GP 600V 60A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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APT2X60DQ120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 60A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 265 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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APT2X60DQ60J | Microchip Technology |
Description: DIODE MODULE 600V 60A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: ISOTOP® Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
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APT2X61D40J | Microchip Technology |
Description: DIODE MODULE GP 400V 60A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 37 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 400 V |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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APT2X61D60J | Microchip Technology |
Description: DIODE MODULE GP 600V 60A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 126 шт: термін постачання 21-31 дні (днів) |
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APT2X61DQ100J | Microchip Technology |
Description: DIODE MODULE GP 1000V 60A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 235 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: ISOTOP® Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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APT2X61DQ120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 60A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 265 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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APT2X61DQ60J | Microchip Technology |
Description: DIODE MODULE GP 600V 60A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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APT2X61S20J | Microchip Technology |
Description: DIODE MOD SCHOTT 200V 75A ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 75A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
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APT30D100BCAG | Microchip Technology |
Description: DIODE ARRAY GP 1000V 18A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 290 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 18A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1000 V |
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APT30D100BCTG | Microchip Technology |
Description: DIODE ARRAY GP 1000V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 290 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1000 V |
товар відсутній |
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APT30D100BG | Microchip Technology |
Description: DIODE GEN PURP 1KV 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 290 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1000 V |
на замовлення 841 шт: термін постачання 21-31 дні (днів) |
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APT30D100BHBG | Microchip Technology |
Description: DIODE ARRAY GP 1000V 18A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 290 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 18A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1000 V |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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APT30D120BCTG | Microchip Technology |
Description: DIODE ARRAY GP 1200V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
товар відсутній |
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APT30D120BG | Microchip Technology |
Description: DIODE GEN PURP 1.2KV 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 185 шт: термін постачання 21-31 дні (днів) |
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APT30D120SG | Microchip Technology |
Description: DIODE GEN PURP 1.2KV 30A D3 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
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APT30D20BCAG | Microchip Technology |
Description: DIODE ARRAY GP 200V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V |
на замовлення 79 шт: термін постачання 21-31 дні (днів) |
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APT30D20BCTG | Microchip Technology |
Description: DIODE ARRAY GP 200V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V |
товар відсутній |
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APT30D20BG | Microchip Technology |
Description: DIODE GP 200V 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V |
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APT30D30BG | Microchip Technology |
Description: DIODE GP 300V 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 300 V |
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APT30D40BCTG | Microchip Technology |
Description: DIODE ARRAY GP 400V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 400 V |
товар відсутній |
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APT30D40BG | Microchip Technology |
Description: DIODE GP 400V 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 400 V |
на замовлення 280 шт: термін постачання 21-31 дні (днів) |
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APT30D40SG | Microchip Technology |
Description: DIODE GEN PURP 400V 30A D3 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 400 V |
товар відсутній |
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APT30D60BCAG | Microchip Technology |
Description: DIODE ARRAY GP 600V 27A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 27A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 127 шт: термін постачання 21-31 дні (днів) |
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APT30D60BCTG | Microchip Technology |
Description: DIODE ARRAY GP 600V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 279 шт: термін постачання 21-31 дні (днів) |
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APT30D60BG | Microchip Technology |
Description: DIODE GP 600V 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 8021 шт: термін постачання 21-31 дні (днів) |
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APT30D60BHBG | Microchip Technology |
Description: DIODE ARRAY GP 600V 27A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 27A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 672 шт: термін постачання 21-31 дні (днів) |
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APT30D60SG | Microchip Technology |
Description: DIODE GEN PURP 600V 30A D3 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 168 шт: термін постачання 21-31 дні (днів) |
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APT30DQ100KG | Microchip Technology |
Description: DIODE GEN PURP 1KV 30A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 295 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
на замовлення 313 шт: термін постачання 21-31 дні (днів) |
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APT30DQ120BCTG | Microchip Technology |
Description: DIODE ARRAY GP 1200V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 320 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 222 шт: термін постачання 21-31 дні (днів) |
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APT30DQ120BG | Microchip Technology |
Description: DIODE GP 1.2KV 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 320 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 208 шт: термін постачання 21-31 дні (днів) |
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APT30DQ120KG | Microchip Technology |
Description: DIODE GP 1.2KV 30A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 320 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товар відсутній |
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APT30DQ60BCTG | Microchip Technology |
Description: DIODE ARRAY GP 600V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
на замовлення 130 шт: термін постачання 21-31 дні (днів) |
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APT30DQ60KG | Microchip Technology |
Description: DIODE GP 600V 30A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
на замовлення 1337 шт: термін постачання 21-31 дні (днів) |
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APT30DS60BG | Microchip Technology |
Description: DIODE ARRAY GP 600V 20A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 4 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
товар відсутній |
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APT30GN60BDQ2G | Microchip Technology |
Description: IGBT TRENCH FS 600V 63A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/155ns Switching Energy: 525µJ (on), 700µJ (off) Test Condition: 400V, 30A, 4.3Ohm, 15V Gate Charge: 165 nC Current - Collector (Ic) (Max): 63 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 203 W |
товар відсутній |
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APT30GN60BG | Microchip Technology |
Description: IGBT TRENCH FS 600V 63A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/155ns Switching Energy: 525µJ (on), 700µJ (off) Test Condition: 400V, 30A, 4.3Ohm, 15V Gate Charge: 165 nC Current - Collector (Ic) (Max): 63 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 203 W |
товар відсутній |
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APT30GT60BRDQ2G | Microchip Technology |
Description: IGBT 600V 64A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 22 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 12ns/225ns Switching Energy: 80µJ (on), 605µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 7.5 nC Part Status: Active Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 250 W |
товар відсутній |
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APT30GT60BRG | Microchip Technology |
Description: IGBT 600V 64A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 12ns/225ns Switching Energy: 525µJ (on), 600µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 250 W |
товар відсутній |
APT2X101D100J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 1000V 95A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Description: DIODE MODULE GP 1000V 95A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2289.9 грн |
100+ | 1789.5 грн |
APT2X101D120J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 93A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 420 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 93A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE MODULE GP 1200V 93A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 420 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 93A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 100 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 329 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2634.14 грн |
100+ | 2060.07 грн |
APT2X101D20J |
Виробник: Microchip Technology
Description: DIODE MODULE 200V 100A ISOTOP
Description: DIODE MODULE 200V 100A ISOTOP
на замовлення 150 шт:
термін постачання 21-31 дні (днів)APT2X101D40J |
Виробник: Microchip Technology
Description: DIODE MODULE 400V 100A ISOTOP
Description: DIODE MODULE 400V 100A ISOTOP
на замовлення 321 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1888.65 грн |
100+ | 1671.26 грн |
APT2X101D60J |
Виробник: Microchip Technology
Description: DIODE MODULE 600V 100A ISOTOP
Description: DIODE MODULE 600V 100A ISOTOP
на замовлення 399 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1888.65 грн |
100+ | 1671.26 грн |
APT2X101DQ100J |
Виробник: Microchip Technology
Description: DIODE MODULE 1KV 100A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE MODULE 1KV 100A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
товар відсутній
APT2X101DQ120J |
Виробник: Microchip Technology
Description: DIODE MOD GP 1.2KV 100A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE MOD GP 1.2KV 100A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 385 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 363 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1802.42 грн |
100+ | 1408.69 грн |
APT2X101DQ60J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 100A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 100A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 163 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1609.99 грн |
100+ | 1257.96 грн |
APT2X101S20J |
Виробник: Microchip Technology
Description: DIODE MOD SCHOT 200V 120A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
Description: DIODE MOD SCHOT 200V 120A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
на замовлення 535 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1863.71 грн |
100+ | 1456.8 грн |
APT2X30D120J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE MODULE GP 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 695 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1855.16 грн |
100+ | 1450.45 грн |
APT2X30D60J |
Виробник: Microchip Technology
Description: DIODE MODULE 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE MODULE 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
товар відсутній
APT2X30DQ60J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товар відсутній
APT2X31D120J |
Виробник: Microchip Technology
Description: DIODE MODULE 1.2KV 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE MODULE 1.2KV 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2009.1 грн |
APT2X31D40J |
Виробник: Microchip Technology
Description: DIODE MODULE 400V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Description: DIODE MODULE 400V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1482.41 грн |
APT2X31D60J |
Виробник: Microchip Technology
Description: DIODE MODULE 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE MODULE 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1482.41 грн |
APT2X31DQ120J |
Виробник: Microchip Technology
Description: DIODE MODULE 1.2KV 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE MODULE 1.2KV 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1569.36 грн |
APT2X31DQ60J |
Виробник: Microchip Technology
Description: DIODE MODULE 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1444.64 грн |
APT2X31S20J |
Виробник: Microchip Technology
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1411.14 грн |
100+ | 1104.28 грн |
APT2X60D100J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 1000V 55A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 55A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Description: DIODE MODULE GP 1000V 55A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 55A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
товар відсутній
APT2X60D120J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 53A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 53A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE MODULE GP 1200V 53A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 53A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2211.51 грн |
APT2X60D60J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE MODULE GP 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1616.4 грн |
APT2X60DQ120J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 265 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE MODULE GP 1200V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 265 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1525.18 грн |
APT2X60DQ60J |
Виробник: Microchip Technology
Description: DIODE MODULE 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товар відсутній
APT2X61D40J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 400V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Description: DIODE MODULE GP 400V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1616.4 грн |
APT2X61D60J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE MODULE GP 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 126 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1616.4 грн |
100+ | 1262.63 грн |
APT2X61DQ100J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 1000V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 235 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE MODULE GP 1000V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 235 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1575.07 грн |
APT2X61DQ120J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 265 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE MODULE GP 1200V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 265 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1649.9 грн |
APT2X61DQ60J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1412.57 грн |
APT2X61S20J |
Виробник: Microchip Technology
Description: DIODE MOD SCHOTT 200V 75A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE MOD SCHOTT 200V 75A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
товар відсутній
APT30D100BCAG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Description: DIODE ARRAY GP 1000V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
товар відсутній
APT30D100BCTG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Description: DIODE ARRAY GP 1000V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
товар відсутній
APT30D100BG |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Description: DIODE GEN PURP 1KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
на замовлення 841 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 216.66 грн |
100+ | 168.73 грн |
APT30D100BHBG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Description: DIODE ARRAY GP 1000V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 414.08 грн |
100+ | 323.2 грн |
APT30D120BCTG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
APT30D120BG |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 185 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 170.34 грн |
100+ | 132.29 грн |
APT30D120SG |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
APT30D20BCAG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
на замовлення 79 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 399.82 грн |
APT30D20BCTG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
товар відсутній
APT30D20BG |
Виробник: Microchip Technology
Description: DIODE GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Description: DIODE GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
товар відсутній
APT30D30BG |
Виробник: Microchip Technology
Description: DIODE GP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
Description: DIODE GP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
товар відсутній
APT30D40BCTG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Description: DIODE ARRAY GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
товар відсутній
APT30D40BG |
Виробник: Microchip Technology
Description: DIODE GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Description: DIODE GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
на замовлення 280 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 193.85 грн |
100+ | 152.89 грн |
APT30D40SG |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Description: DIODE GEN PURP 400V 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
товар відсутній
APT30D60BCAG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 27A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE ARRAY GP 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 27A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 127 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 399.82 грн |
100+ | 312.91 грн |
APT30D60BCTG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 279 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 325.7 грн |
100+ | 253.49 грн |
APT30D60BG |
Виробник: Microchip Technology
Description: DIODE GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 8021 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 150.38 грн |
100+ | 117.24 грн |
APT30D60BHBG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 27A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE ARRAY GP 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 27A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 672 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 399.11 грн |
100+ | 312.11 грн |
APT30D60SG |
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE GEN PURP 600V 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 168 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 223.07 грн |
APT30DQ100KG |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 30A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 30A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 313 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 71.27 грн |
100+ | 55.45 грн |
APT30DQ120BCTG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 222 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 305.04 грн |
100+ | 240.03 грн |
APT30DQ120BG |
Виробник: Microchip Technology
Description: DIODE GP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 208 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 109.76 грн |
100+ | 85.55 грн |
APT30DQ120KG |
Виробник: Microchip Technology
Description: DIODE GP 1.2KV 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GP 1.2KV 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
APT30DQ60BCTG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 176.04 грн |
100+ | 137.05 грн |
APT30DQ60KG |
Виробник: Microchip Technology
Description: DIODE GP 600V 30A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE GP 600V 30A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 1337 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 58.44 грн |
100+ | 45.95 грн |
APT30DS60BG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE ARRAY GP 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
товар відсутній
APT30GN60BDQ2G |
Виробник: Microchip Technology
Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
товар відсутній
APT30GN60BG |
Виробник: Microchip Technology
Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
товар відсутній
APT30GT60BRDQ2G |
Виробник: Microchip Technology
Description: IGBT 600V 64A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 80µJ (on), 605µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 7.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
Description: IGBT 600V 64A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 80µJ (on), 605µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 7.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
товар відсутній
APT30GT60BRG |
Виробник: Microchip Technology
Description: IGBT 600V 64A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 525µJ (on), 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
Description: IGBT 600V 64A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 525µJ (on), 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
товар відсутній