Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (338576) > Сторінка 379 з 5643
Фото | Назва | Виробник | Інформація |
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APT5016BLLG | Microchip Technology |
Description: MOSFET N-CH 500V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V Power Dissipation (Max): 329W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V |
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APT5018BLLG | Microchip Technology | Description: MOSFET N-CH 500V 27A TO247 |
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APT5024BFLLG | Microchip Technology | Description: MOSFET N-CH 500V 22A TO247 |
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APT5024BLLG | Microchip Technology | Description: MOSFET N-CH 500V 22A TO247 |
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APT50GF120LRG | Microchip Technology |
Description: IGBT NPT 1200V 135A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A Supplier Device Package: TO-264 [L] IGBT Type: NPT Td (on/off) @ 25°C: 25ns/260ns Switching Energy: 3.6mJ (on), 2.64mJ (off) Test Condition: 800V, 50A, 1Ohm, 15V Gate Charge: 340 nC Part Status: Active Current - Collector (Ic) (Max): 135 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 781 W |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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APT50GN120B2G | Microchip Technology |
Description: IGBT 1200V 134A 543W TO-247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: 28ns/320ns Switching Energy: 4495µJ (off) Test Condition: 800V, 50A, 2.2Ohm, 15V Gate Charge: 315 nC Part Status: Active Current - Collector (Ic) (Max): 134 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 543 W |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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APT50GN120L2DQ2G | Microchip Technology |
Description: IGBT 1200V 134A 543W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: 28ns/320ns Switching Energy: 4495µJ (off) Test Condition: 800V, 50A, 2.2Ohm, 15V Gate Charge: 315 nC Part Status: Active Current - Collector (Ic) (Max): 134 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 543 W |
на замовлення 51 шт: термін постачання 21-31 дні (днів) |
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APT50GN60BDQ2G | Microchip Technology |
Description: IGBT TRENCH FS 600V 107A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A Supplier Device Package: TO-247 [B] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/230ns Switching Energy: 1185µJ (on), 1565µJ (off) Test Condition: 400V, 50A, 4.3Ohm, 15V Gate Charge: 325 nC Part Status: Active Current - Collector (Ic) (Max): 107 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 366 W |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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APT50GN60BG | Microchip Technology |
Description: IGBT TRENCH FS 600V 107A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A Supplier Device Package: TO-247 [B] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/230ns Switching Energy: 1185µJ (on), 1565µJ (off) Test Condition: 400V, 50A, 4.3Ohm, 15V Gate Charge: 325 nC Part Status: Active Current - Collector (Ic) (Max): 107 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 366 W |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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APT50GP60B2DQ2G | Microchip Technology |
Description: IGBT 600V 150A 625W TMAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A IGBT Type: PT Td (on/off) @ 25°C: 19ns/85ns Switching Energy: 465µJ (on), 635µJ (off) Test Condition: 400V, 50A, 4.3Ohm, 15V Gate Charge: 165 nC Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 190 A Power - Max: 625 W |
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APT50GP60BG | Microchip Technology |
Description: IGBT 600V 100A 625W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 19ns/83ns Switching Energy: 465µJ (on), 637µJ (off) Test Condition: 400V, 50A, 5Ohm, 15V Gate Charge: 165 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 190 A Power - Max: 625 W |
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APT50GP60J | Microchip Technology |
Description: IGBT MOD 600V 100A 329W ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 329 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V |
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APT50GP60JDQ2 | Microchip Technology |
Description: IGBT MOD 600V 100A 329W ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 329 W Current - Collector Cutoff (Max): 525 µA Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V |
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APT50GT120JRDQ2 | Microchip Technology |
Description: IGBT MOD 1200V 72A 379W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: NPT Current - Collector (Ic) (Max): 72 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 379 W Current - Collector Cutoff (Max): 400 µA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
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APT50GT60BRDQ2G | Microchip Technology | Description: IGBT 600V 110A 446W TO247 |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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APT50GT60BRG | Microchip Technology | Description: IGBT 600V 110A 446W TO247 |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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APT50M38JLL | Microchip Technology |
Description: MOSFET N-CH 500V 88A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 44A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
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APT50M50JLL | Microchip Technology |
Description: MOSFET N-CH 500V 71A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 35.5A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10550 pF @ 25 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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APT50M65JFLL | Microchip Technology |
Description: MOSFET N-CH 500V 58A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7010 pF @ 25 V |
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APT50M65JLL | Microchip Technology |
Description: MOSFET N-CH 500V 58A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7010 pF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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APT51M50J | Microchip Technology | Description: MOSFET N-CH 500V 51A ISOTOP |
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APT53F80J | Microchip Technology |
Description: MOSFET N-CH 800V 57A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V |
на замовлення 169 шт: термін постачання 21-31 дні (днів) |
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APT56M50L | Microchip Technology | Description: MOSFET N-CH 500V 56A TO264 |
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APT58M50J | Microchip Technology | Description: MOSFET N-CH 500V 58A ISOTOP |
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APT58M80J | Microchip Technology |
Description: MOSFET N-CH 800V 60A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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APT6010B2LLG | Microchip Technology |
Description: MOSFET N-CH 600V 54A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V Power Dissipation (Max): 690W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V |
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APT6013LLLG | Microchip Technology |
Description: MOSFET N-CH 600V 43A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 21.5A, 10V Power Dissipation (Max): 565W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V |
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APT6021BFLLG | Microchip Technology |
Description: MOSFET N-CH 600V 29A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V |
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APT6021BLLG | Microchip Technology | Description: MOSFET N-CH 600V 29A TO247 |
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APT6029BFLLG | Microchip Technology | Description: MOSFET N-CH 600V 21A TO-247 |
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APT6029BLLG | Microchip Technology | Description: MOSFET N-CH 600V 21A TO247 |
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APT6038BFLLG | Microchip Technology | Description: MOSFET N-CH 600V 17A TO-247 |
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APT6038BLLG | Microchip Technology | Description: MOSFET N-CH 600V 17A TO-247 |
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APT60D100BG | Microchip Technology |
Description: DIODE GEN PURP 1KV 60A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 280 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 1000 V |
на замовлення 1065 шт: термін постачання 21-31 дні (днів) |
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APT60D100LCTG | Microchip Technology |
Description: DIODE ARRAY GP 1000V 60A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 280 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-264 [L] Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 1000 V |
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APT60D100SG | Microchip Technology |
Description: DIODE GEN PURP 1KV 60A D3 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 280 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 1000 V |
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APT60D120BG | Microchip Technology |
Description: DIODE GP 1.2KV 60A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 431 шт: термін постачання 21-31 дні (днів) |
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APT60D120SG | Microchip Technology |
Description: DIODE GEN PURP 1.2KV 60A D3 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
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APT60D20BG | Microchip Technology |
Description: DIODE GP 200V 60A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 31 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V |
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APT60D40BG | Microchip Technology |
Description: DIODE GP 400V 60A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 37 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 400 V |
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APT60D40LCTG | Microchip Technology |
Description: DIODE ARRAY GP 400V 60A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 37 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-264 [L] Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 400 V |
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APT60D60BG | Microchip Technology |
Description: DIODE GP 600V 60A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 4262 шт: термін постачання 21-31 дні (днів) |
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APT60D60LCTG | Microchip Technology |
Description: DIODE ARRAY GP 600V 60A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-264 [L] Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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APT60DQ100BG | Microchip Technology |
Description: DIODE GEN PURP 1KV 60A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 255 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
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APT60DQ100LCTG | Microchip Technology |
Description: DIODE ARRAY GP 1000V 60A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 255 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-264 [L] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
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APT60DQ60BCTG | Microchip Technology |
Description: DIODE ARRAY GP 600V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
на замовлення 2574 шт: термін постачання 21-31 дні (днів) |
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APT60GF120JRDQ3 | Microchip Technology |
Description: IGBT MOD 1200V 149A 625W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 149 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 625 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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APT60GT60BRG | Microchip Technology |
Description: IGBT NPT 600V 100A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 26ns/395ns Switching Energy: 3.4mJ Gate Charge: 275 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 360 A Power - Max: 500 W |
на замовлення 2065 шт: термін постачання 21-31 дні (днів) |
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APT60M60JFLL | Microchip Technology |
Description: MOSFET N-CH 600V 70A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V |
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APT60M60JLL | Microchip Technology | Description: MOSFET N-CH 600V 70A ISOTOP |
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APT60M75JFLL | Microchip Technology | Description: MOSFET N-CH 600V 58A ISOTOP |
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APT60M75JLL | Microchip Technology | Description: MOSFET N-CH 600V 58A ISOTOP |
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APT60M75JVR | Microchip Technology | Description: MOSFET N-CH 600V 62A ISOTOP |
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APT60M75L2FLLG | Microchip Technology | Description: MOSFET N-CH 600V 73A 264 MAX |
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APT60M75L2LLG | Microchip Technology | Description: MOSFET N-CH 600V 73A 264 MAX |
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APT60N60BCSG | Microchip Technology |
Description: MOSFET N-CH 600V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
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APT60S20B2CTG | Microchip Technology |
Description: DIODE ARRAY SCHOTTKY 200V TMAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 75A Supplier Device Package: T-MAX™ [B2] Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
на замовлення 754 шт: термін постачання 21-31 дні (днів) |
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APT60S20BG | Microchip Technology |
Description: DIODE SCHOTTKY 200V 75A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Schottky Current - Average Rectified (Io): 75A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
на замовлення 935 шт: термін постачання 21-31 дні (днів) |
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APT60S20SG | Microchip Technology | Description: DIODE SCHOTTKY 200V 75A D3 |
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APT65GP60B2G | Microchip Technology |
Description: IGBT 600V 100A 833W TMAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A IGBT Type: PT Td (on/off) @ 25°C: 30ns/91ns Switching Energy: 605µJ (on), 896µJ (off) Test Condition: 400V, 65A, 5Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 250 A Power - Max: 833 W |
на замовлення 115 шт: термін постачання 21-31 дні (днів) |
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APT5016BLLG |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
товар відсутній
APT50GF120LRG |
Виробник: Microchip Technology
Description: IGBT NPT 1200V 135A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Supplier Device Package: TO-264 [L]
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/260ns
Switching Energy: 3.6mJ (on), 2.64mJ (off)
Test Condition: 800V, 50A, 1Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 781 W
Description: IGBT NPT 1200V 135A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Supplier Device Package: TO-264 [L]
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/260ns
Switching Energy: 3.6mJ (on), 2.64mJ (off)
Test Condition: 800V, 50A, 1Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 781 W
на замовлення 28 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 1444.33 грн |
APT50GN120B2G |
Виробник: Microchip Technology
Description: IGBT 1200V 134A 543W TO-247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 28ns/320ns
Switching Energy: 4495µJ (off)
Test Condition: 800V, 50A, 2.2Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 543 W
Description: IGBT 1200V 134A 543W TO-247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 28ns/320ns
Switching Energy: 4495µJ (off)
Test Condition: 800V, 50A, 2.2Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 543 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 736.21 грн |
APT50GN120L2DQ2G |
Виробник: Microchip Technology
Description: IGBT 1200V 134A 543W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 28ns/320ns
Switching Energy: 4495µJ (off)
Test Condition: 800V, 50A, 2.2Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 543 W
Description: IGBT 1200V 134A 543W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 28ns/320ns
Switching Energy: 4495µJ (off)
Test Condition: 800V, 50A, 2.2Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 543 W
на замовлення 51 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1178.51 грн |
APT50GN60BDQ2G |
Виробник: Microchip Technology
Description: IGBT TRENCH FS 600V 107A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/230ns
Switching Energy: 1185µJ (on), 1565µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 325 nC
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 366 W
Description: IGBT TRENCH FS 600V 107A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/230ns
Switching Energy: 1185µJ (on), 1565µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 325 nC
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 366 W
на замовлення 80 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 483.36 грн |
APT50GN60BG |
Виробник: Microchip Technology
Description: IGBT TRENCH FS 600V 107A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/230ns
Switching Energy: 1185µJ (on), 1565µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 325 nC
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 366 W
Description: IGBT TRENCH FS 600V 107A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/230ns
Switching Energy: 1185µJ (on), 1565µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 325 nC
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 366 W
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 355.14 грн |
100+ | 277.83 грн |
APT50GP60B2DQ2G |
Виробник: Microchip Technology
Description: IGBT 600V 150A 625W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/85ns
Switching Energy: 465µJ (on), 635µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 625 W
Description: IGBT 600V 150A 625W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/85ns
Switching Energy: 465µJ (on), 635µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 625 W
товар відсутній
APT50GP60BG |
Виробник: Microchip Technology
Description: IGBT 600V 100A 625W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/83ns
Switching Energy: 465µJ (on), 637µJ (off)
Test Condition: 400V, 50A, 5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 625 W
Description: IGBT 600V 100A 625W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/83ns
Switching Energy: 465µJ (on), 637µJ (off)
Test Condition: 400V, 50A, 5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 625 W
товар відсутній
APT50GP60J |
Виробник: Microchip Technology
Description: IGBT MOD 600V 100A 329W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V
Description: IGBT MOD 600V 100A 329W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V
товар відсутній
APT50GP60JDQ2 |
Виробник: Microchip Technology
Description: IGBT MOD 600V 100A 329W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 525 µA
Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V
Description: IGBT MOD 600V 100A 329W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 525 µA
Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V
товар відсутній
APT50GT120JRDQ2 |
Виробник: Microchip Technology
Description: IGBT MOD 1200V 72A 379W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 379 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Description: IGBT MOD 1200V 72A 379W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 379 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
товар відсутній
APT50GT60BRDQ2G |
Виробник: Microchip Technology
Description: IGBT 600V 110A 446W TO247
Description: IGBT 600V 110A 446W TO247
на замовлення 80 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 836.34 грн |
APT50GT60BRG |
Виробник: Microchip Technology
Description: IGBT 600V 110A 446W TO247
Description: IGBT 600V 110A 446W TO247
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 506.42 грн |
APT50M38JLL |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 88A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 44A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Description: MOSFET N-CH 500V 88A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 44A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
товар відсутній
APT50M50JLL |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 71A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 35.5A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10550 pF @ 25 V
Description: MOSFET N-CH 500V 71A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 35.5A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10550 pF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4007.38 грн |
APT50M65JFLL |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 58A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7010 pF @ 25 V
Description: MOSFET N-CH 500V 58A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7010 pF @ 25 V
товар відсутній
APT50M65JLL |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 58A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7010 pF @ 25 V
Description: MOSFET N-CH 500V 58A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7010 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2899.46 грн |
APT53F80J |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 57A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
Description: MOSFET N-CH 800V 57A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
на замовлення 169 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4649.94 грн |
100+ | 3633.5 грн |
APT58M80J |
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
Description: MOSFET N-CH 800V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4386.29 грн |
APT6010B2LLG |
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 54A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Description: MOSFET N-CH 600V 54A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
товар відсутній
APT6013LLLG |
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 43A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
Description: MOSFET N-CH 600V 43A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
товар відсутній
APT6021BFLLG |
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 29A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Description: MOSFET N-CH 600V 29A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
товар відсутній
APT60D100BG |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Description: DIODE GEN PURP 1KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
на замовлення 1065 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 370.99 грн |
100+ | 290.07 грн |
APT60D100LCTG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Description: DIODE ARRAY GP 1000V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
товар відсутній
APT60D100SG |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 60A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Description: DIODE GEN PURP 1KV 60A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
товар відсутній
APT60D120BG |
Виробник: Microchip Technology
Description: DIODE GP 1.2KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE GP 1.2KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 431 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 251.41 грн |
100+ | 195.76 грн |
APT60D120SG |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 60A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 60A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
APT60D20BG |
Виробник: Microchip Technology
Description: DIODE GP 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Description: DIODE GP 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
товар відсутній
APT60D40BG |
Виробник: Microchip Technology
Description: DIODE GP 400V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Description: DIODE GP 400V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
товар відсутній
APT60D40LCTG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 400V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Description: DIODE ARRAY GP 400V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
товар відсутній
APT60D60BG |
Виробник: Microchip Technology
Description: DIODE GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 4262 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 218.99 грн |
100+ | 170.55 грн |
APT60D60LCTG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE ARRAY GP 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 598.62 грн |
APT60DQ100BG |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
товар відсутній
APT60DQ100LCTG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE ARRAY GP 1000V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
товар відсутній
APT60DQ60BCTG |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE ARRAY GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 2574 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 280.94 грн |
100+ | 219.53 грн |
APT60GF120JRDQ3 |
Виробник: Microchip Technology
Description: IGBT MOD 1200V 149A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 149 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V
Description: IGBT MOD 1200V 149A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 149 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 7723.73 грн |
APT60GT60BRG |
Виробник: Microchip Technology
Description: IGBT NPT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 26ns/395ns
Switching Energy: 3.4mJ
Gate Charge: 275 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 500 W
Description: IGBT NPT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 26ns/395ns
Switching Energy: 3.4mJ
Gate Charge: 275 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 500 W
на замовлення 2065 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 948 грн |
10+ | 804.26 грн |
25+ | 739.08 грн |
100+ | 652.8 грн |
APT60M60JFLL |
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
Description: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
товар відсутній
APT60M75L2FLLG |
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 73A 264 MAX
Description: MOSFET N-CH 600V 73A 264 MAX
товар відсутній
APT60M75L2LLG |
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 73A 264 MAX
Description: MOSFET N-CH 600V 73A 264 MAX
товар відсутній
APT60N60BCSG |
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
на замовлення 137 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1348.52 грн |
100+ | 1054.5 грн |
APT60S20B2CTG |
Виробник: Microchip Technology
Description: DIODE ARRAY SCHOTTKY 200V TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: T-MAX™ [B2]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE ARRAY SCHOTTKY 200V TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: T-MAX™ [B2]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 754 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 530.19 грн |
100+ | 413.15 грн |
APT60S20BG |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 200V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE SCHOTTKY 200V 75A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 935 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 255.01 грн |
100+ | 199.72 грн |
APT65GP60B2G |
Виробник: Microchip Technology
Description: IGBT 600V 100A 833W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/91ns
Switching Energy: 605µJ (on), 896µJ (off)
Test Condition: 400V, 65A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 833 W
Description: IGBT 600V 100A 833W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/91ns
Switching Energy: 605µJ (on), 896µJ (off)
Test Condition: 400V, 65A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 833 W
на замовлення 115 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1189.32 грн |