Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (276928) > Сторінка 379 з 4616
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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APT2X30D20J | Microchip Technology |
Description: DIODE MODULE GP 200V 30A ISOTOPCurrent - Reverse Leakage @ Vr: 250 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 24 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||
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APT2X30D30J | Microchip Technology |
Description: DIODE MODULE 300V 30A ISOTOP |
товару немає в наявності |
Мінімальне замовлення: 18 шт В кошику од. на суму грн. | ||||
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APT2X30D60J | Microchip Technology |
Description: DIODE MODULE GP 600V 30A ISOTOPPackage / Case: SOT-227-4, miniBLOC Packaging: Tube Current - Reverse Leakage @ Vr: 250 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 85 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||
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APT2X30DQ60J | Microchip Technology |
Description: DIODE MODULE GP 600V 30A ISOTOPPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 105 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||
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APT2X31D120J | Microchip Technology |
Description: DIODE MODULE 1.2KV 30A ISOTOPCurrent - Reverse Leakage @ Vr: 250 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 370 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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APT2X31D40J | Microchip Technology |
Description: DIODE MODULE GP 400V 30A ISOTOPCurrent - Reverse Leakage @ Vr: 250 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 32 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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APT2X31D60J | Microchip Technology |
Description: DIODE MODULE 600V 30A ISOTOPCurrent - Reverse Leakage @ Vr: 250 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 85 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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APT2X31DQ120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 30A ISOTOPCurrent - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 300 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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APT2X31DQ60J | Microchip Technology |
Description: DIODE MODULE GP 600V 30A ISOTOP Current - Reverse Leakage @ Vr: 25 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 105 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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APT2X31S20J | Microchip Technology |
Description: DIODE MOD SCHOTT 200V 45A ISOTOPPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 45A Supplier Device Package: ISOTOP® Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
на замовлення 883 шт: термін постачання 21-31 дні (днів) |
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APT2X60D100J | Microchip Technology |
Description: DIODE MODULE GP 1000V 55A ISOTOPCurrent - Reverse Leakage @ Vr: 250 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1000 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 55A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 280 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||
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APT2X60D120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 53A ISOTOPCurrent - Reverse Leakage @ Vr: 250 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1200 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 53A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 400 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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APT2X60D60J | Microchip Technology |
Description: DIODE MODULE GP 600V 60A ISOTOPCurrent - Reverse Leakage @ Vr: 250 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Voltage - DC Reverse (Vr) (Max): 600 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 130 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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APT2X60DQ120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 60A ISOTOPSpeed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1200 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 265 ns |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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APT2X60DQ60J | Microchip Technology |
Description: DIODE MODULE 600V 60A ISOTOPCurrent - Reverse Leakage @ Vr: 25 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 160 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||
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APT2X61D40J | Microchip Technology |
Description: DIODE MODULE GP 400V 60A ISOTOPSpeed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Current - Reverse Leakage @ Vr: 250 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A Voltage - DC Reverse (Vr) (Max): 400 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 37 ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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APT2X61D60J | Microchip Technology |
Description: DIODE MODULE GP 600V 60A ISOTOPVoltage - DC Reverse (Vr) (Max): 600 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 130 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Current - Reverse Leakage @ Vr: 250 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A |
на замовлення 126 шт: термін постачання 21-31 дні (днів) |
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APT2X61DQ100J | Microchip Technology |
Description: DIODE MODULE GP 1000V 60A ISOTOPCurrent - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 235 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Current - Reverse Leakage @ Vr: 100 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Supplier Device Package: ISOTOP® |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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APT2X61DQ120J | Microchip Technology |
Description: DIODE MODULE GP 1200V 60A ISOTOPCurrent - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1200 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 265 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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APT2X61DQ60J | Microchip Technology |
Description: DIODE MODULE GP 600V 60A ISOTOPCurrent - Reverse Leakage @ Vr: 25 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A Voltage - DC Reverse (Vr) (Max): 600 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 160 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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APT2X61S20J | Microchip Technology |
Description: DIODE MOD SCHOTT 200V 75A ISOTOPCurrent - Reverse Leakage @ Vr: 1 mA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A Voltage - DC Reverse (Vr) (Max): 200 V Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 75A Diode Configuration: 2 Independent Technology: Schottky Reverse Recovery Time (trr): 55 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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APT30D100BCAG | Microchip Technology |
Description: DIODE ARRAY GP 1000V 18A TO247Current - Reverse Leakage @ Vr: 250 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 [B] Current - Average Rectified (Io) (per Diode): 18A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 290 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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APT30D100BCTG | Microchip Technology |
Description: DIODE ARRAY GP 1000V 30A TO247Current - Reverse Leakage @ Vr: 250 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 [B] Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 290 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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APT30D100BG | Microchip Technology |
Description: DIODE STANDARD 1000V 30A TO247Current - Reverse Leakage @ Vr: 250 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 Current - Average Rectified (Io): 30A Technology: Standard Reverse Recovery Time (trr): 290 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
на замовлення 1083 шт: термін постачання 21-31 дні (днів) |
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APT30D100BHBG | Microchip Technology |
Description: DIODE ARRAY GP 1000V 18A TO247Current - Reverse Leakage @ Vr: 250 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 [B] Current - Average Rectified (Io) (per Diode): 18A Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 290 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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APT30D120BCTG | Microchip Technology |
Description: DIODE ARRAY GP 1200V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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APT30D120BG | Microchip Technology |
Description: DIODE GEN PURP 1.2KV 30A TO247Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 165 шт: термін постачання 21-31 дні (днів) |
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APT30D120SG | Microchip Technology |
Description: DIODE GEN PURP 1.2KV 30A D3Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 370 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
товару немає в наявності |
Мінімальне замовлення: 150 шт В кошику од. на суму грн. | ||||
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APT30D20BCAG | Microchip Technology |
Description: DIODE ARRAY GP 200V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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APT30D20BCTG | Microchip Technology |
Description: DIODE ARRAY GP 200V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 120 шт В кошику од. на суму грн. | ||||
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APT30D20BG | Microchip Technology |
Description: DIODE STD 200V 30A TO247 [B]Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 200 V |
на замовлення 354 шт: термін постачання 21-31 дні (днів) |
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APT30D30BG | Microchip Technology |
Description: DIODE GP 300V 30A TO247Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 300 V |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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APT30D40BCTG | Microchip Technology |
Description: DIODE ARRAY GP 400V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 120 шт В кошику од. на суму грн. | ||||
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APT30D40BG | Microchip Technology |
Description: DIODE GP 400V 30A TO247Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 400 V |
на замовлення 345 шт: термін постачання 21-31 дні (днів) |
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APT30D40SG | Microchip Technology |
Description: DIODE GEN PURP 400V 30A D3Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 140 шт В кошику од. на суму грн. | ||||
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APT30D60BCAG | Microchip Technology |
Description: DIODE ARRAY GP 600V 27A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 27A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 171 шт: термін постачання 21-31 дні (днів) |
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APT30D60BCTG | Microchip Technology |
Description: DIODE ARRAY GP 600V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
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APT30D60BG | Microchip Technology |
Description: DIODE STD 600V 30A TO247 [B]Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 14836 шт: термін постачання 21-31 дні (днів) |
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APT30D60BHBG | Microchip Technology |
Description: DIODE ARRAY GP 600V 27A TO247Current - Reverse Leakage @ Vr: 250 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 [B] Current - Average Rectified (Io) (per Diode): 27A Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 85 ns Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Speed: Fast Recovery =< 500ns, > 200mA (Io) |
на замовлення 1174 шт: термін постачання 21-31 дні (днів) |
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APT30D60SG | Microchip Technology |
Description: DIODE STANDARD 600V 30A D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
на замовлення 168 шт: термін постачання 21-31 дні (днів) |
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APT30DQ100KG | Microchip Technology |
Description: DIODE STANDARD 1000V 30A TO2202Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 295 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
на замовлення 468 шт: термін постачання 21-31 дні (днів) |
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APT30DQ120BCTG | Microchip Technology |
Description: DIODE ARRAY GP 1200V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 320 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 348 шт: термін постачання 21-31 дні (днів) |
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APT30DQ120BG | Microchip Technology |
Description: DIODE STD 1200V 30A TO247 [B]Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 320 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 349 шт: термін постачання 21-31 дні (днів) |
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APT30DQ120KG | Microchip Technology |
Description: DIODE GP 1.2KV 30A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 320 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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APT30DQ60BCTG | Microchip Technology |
Description: DIODE ARRAY GP 600V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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APT30DQ60KG | Microchip Technology |
Description: DIODE STANDARD 600V 30A TO2202Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
на замовлення 701 шт: термін постачання 21-31 дні (днів) |
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APT30DS60BG | Microchip Technology |
Description: DIODE ARRAY GP 600V 20A TO247Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 4 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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APT30GN60BDQ2G | Microchip Technology |
Description: IGBT TRENCH FS 600V 63A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/155ns Switching Energy: 525µJ (on), 700µJ (off) Test Condition: 400V, 30A, 4.3Ohm, 15V Gate Charge: 165 nC Current - Collector (Ic) (Max): 63 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 203 W |
товару немає в наявності |
Мінімальне замовлення: 120 шт В кошику од. на суму грн. | ||||
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APT30GN60BG | Microchip Technology |
Description: IGBT TRENCH FS 600V 63A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/155ns Switching Energy: 525µJ (on), 700µJ (off) Test Condition: 400V, 30A, 4.3Ohm, 15V Gate Charge: 165 nC Current - Collector (Ic) (Max): 63 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 203 W |
товару немає в наявності |
Мінімальне замовлення: 150 шт В кошику од. на суму грн. | ||||
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APT30GT60BRDQ2G | Microchip Technology |
Description: IGBT NPT 600V 64A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 22 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 12ns/225ns Switching Energy: 80µJ (on), 605µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 7.5 nC Part Status: Active Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 250 W |
товару немає в наявності |
Мінімальне замовлення: 90 шт В кошику од. на суму грн. | ||||
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APT30GT60BRG | Microchip Technology |
Description: IGBT NPT 600V 64A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 12ns/225ns Switching Energy: 525µJ (on), 600µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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APT30M19JVFR | Microchip Technology |
Description: MOSFET N-CH 300V 130A ISOTOPPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||
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APT30M19JVR | Microchip Technology |
Description: MOSFET N-CH 300V 130A ISOTOPPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||
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APT30M40JVFR | Microchip Technology |
Description: MOSFET N-CH 300V 70A ISOTOPPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||
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APT30M40JVR | Microchip Technology |
Description: MOSFET N-CH 300V 70A ISOTOPPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||
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APT30M60J | Microchip Technology |
Description: MOSFET N-CH 600V 31A ISOTOPPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V Power Dissipation (Max): 355W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||
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APT30M70BVFRG | Microchip Technology |
Description: MOSFET N-CH 300V 48A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | ||||
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APT30M70BVRG | Microchip Technology |
Description: MOSFET N-CH 300V 48A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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APT30M85BVRG | Microchip Technology |
Description: MOSFET N-CH 300V 40A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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APT30S20BCTG | Microchip Technology |
Description: DIODE ARRAY SCHOT 200V 45A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 45A Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
на замовлення 269 шт: термін постачання 21-31 дні (днів) |
|
| APT2X30D20J |
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Виробник: Microchip Technology
Description: DIODE MODULE GP 200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 24 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 24 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| APT2X30D30J |
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Виробник: Microchip Technology
Description: DIODE MODULE 300V 30A ISOTOP
Description: DIODE MODULE 300V 30A ISOTOP
товару немає в наявності
Мінімальне замовлення: 18 шт
В кошику
од. на суму грн.
| APT2X30D60J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 30A ISOTOP
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Description: DIODE MODULE GP 600V 30A ISOTOP
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| APT2X30DQ60J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE MODULE GP 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| APT2X31D120J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE 1.2KV 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 370 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE 1.2KV 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 370 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2189.33 грн |
| APT2X31D40J |
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Виробник: Microchip Technology
Description: DIODE MODULE GP 400V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 400V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1394.83 грн |
| APT2X31D60J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1615.40 грн |
| APT2X31DQ120J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 1200V 30A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1498.13 грн |
| APT2X31DQ60J |
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 105 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 600V 30A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 105 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1380.08 грн |
| APT2X31S20J |
![]() |
Виробник: Microchip Technology
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
на замовлення 883 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1415.03 грн |
| 100+ | 1107.56 грн |
| APT2X60D100J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE GP 1000V 55A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 55A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 280 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 1000V 55A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 55A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 280 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| APT2X60D120J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 53A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 53A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 1200V 53A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 53A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2409.89 грн |
| APT2X60D60J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1761.40 грн |
| APT2X60DQ120J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 60A ISOTOP
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 265 ns
Description: DIODE MODULE GP 1200V 60A ISOTOP
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 265 ns
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1662.00 грн |
| APT2X60DQ60J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| APT2X61D40J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE GP 400V 60A ISOTOP
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 37 ns
Description: DIODE MODULE GP 400V 60A ISOTOP
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 37 ns
товару немає в наявності
В кошику
од. на суму грн.
| APT2X61D60J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Description: DIODE MODULE GP 600V 60A ISOTOP
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
на замовлення 126 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1761.40 грн |
| 100+ | 1375.90 грн |
| APT2X61DQ100J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE GP 1000V 60A ISOTOP
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 235 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Supplier Device Package: ISOTOP®
Description: DIODE MODULE GP 1000V 60A ISOTOP
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 235 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Supplier Device Package: ISOTOP®
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1628.60 грн |
| APT2X61DQ120J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 60A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 265 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 1200V 60A ISOTOP
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 265 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1585.89 грн |
| APT2X61DQ60J |
![]() |
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: DIODE MODULE GP 600V 60A ISOTOP
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 160 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1539.29 грн |
| APT2X61S20J |
![]() |
Виробник: Microchip Technology
Description: DIODE MOD SCHOTT 200V 75A ISOTOP
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 75A
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Description: DIODE MOD SCHOTT 200V 75A ISOTOP
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 75A
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| APT30D100BCAG |
![]() |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| APT30D100BCTG |
![]() |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARRAY GP 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| APT30D100BG |
![]() |
Виробник: Microchip Technology
Description: DIODE STANDARD 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE STANDARD 1000V 30A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
на замовлення 1083 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 223.67 грн |
| 100+ | 174.39 грн |
| APT30D100BHBG |
![]() |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARRAY GP 1000V 18A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 290 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 435.69 грн |
| 100+ | 340.07 грн |
| APT30D120BCTG |
![]() |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| APT30D120BG |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 180.96 грн |
| 100+ | 140.23 грн |
| APT30D120SG |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товару немає в наявності
Мінімальне замовлення: 150 шт
В кошику
од. на суму грн.
| APT30D20BCAG |
![]() |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 451.22 грн |
| APT30D20BCTG |
![]() |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 120 шт
В кошику
од. на суму грн.
| APT30D20BG |
![]() |
Виробник: Microchip Technology
Description: DIODE STD 200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Description: DIODE STD 200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
на замовлення 354 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 219.01 грн |
| 100+ | 172.72 грн |
| APT30D30BG |
![]() |
Виробник: Microchip Technology
Description: DIODE GP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
Description: DIODE GP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 205.81 грн |
| 100+ | 162.06 грн |
| APT30D40BCTG |
![]() |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Description: DIODE ARRAY GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 120 шт
В кошику
од. на суму грн.
| APT30D40BG |
![]() |
Виробник: Microchip Technology
Description: DIODE GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Description: DIODE GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 212.80 грн |
| 100+ | 167.70 грн |
| APT30D40SG |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Description: DIODE GEN PURP 400V 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 140 шт
В кошику
од. на суму грн.
| APT30D60BCAG |
![]() |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 27A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE ARRAY GP 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 27A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 414.72 грн |
| 100+ | 324.66 грн |
| APT30D60BCTG |
![]() |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 368.90 грн |
| 100+ | 287.00 грн |
| APT30D60BG |
![]() |
Виробник: Microchip Technology
Description: DIODE STD 600V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE STD 600V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 14836 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 152.22 грн |
| 100+ | 118.53 грн |
| APT30D60BHBG |
![]() |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 27A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 27A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE ARRAY GP 600V 27A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247 [B]
Current - Average Rectified (Io) (per Diode): 27A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 1174 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 403.07 грн |
| 100+ | 315.54 грн |
| APT30D60SG |
![]() |
Виробник: Microchip Technology
Description: DIODE STANDARD 600V 30A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE STANDARD 600V 30A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 252.41 грн |
| 100+ | 197.32 грн |
| APT30DQ100KG |
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Виробник: Microchip Technology
Description: DIODE STANDARD 1000V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE STANDARD 1000V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 468 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 69.12 грн |
| 100+ | 54.86 грн |
| APT30DQ120BCTG |
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Виробник: Microchip Technology
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 331.62 грн |
| 100+ | 260.60 грн |
| APT30DQ120BG |
![]() |
Виробник: Microchip Technology
Description: DIODE STD 1200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE STD 1200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 349 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 124.26 грн |
| 100+ | 96.65 грн |
| APT30DQ120KG |
![]() |
Виробник: Microchip Technology
Description: DIODE GP 1.2KV 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GP 1.2KV 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 93.20 грн |
| APT30DQ60BCTG |
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Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 166.98 грн |
| 100+ | 130.02 грн |
| APT30DQ60KG |
![]() |
Виробник: Microchip Technology
Description: DIODE STANDARD 600V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE STANDARD 600V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 701 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 55.92 грн |
| 100+ | 43.61 грн |
| APT30DS60BG |
![]() |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: DIODE ARRAY GP 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
товару немає в наявності
В кошику
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| APT30GN60BDQ2G |
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Виробник: Microchip Technology
Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
товару немає в наявності
Мінімальне замовлення: 120 шт
В кошику
од. на суму грн.
| APT30GN60BG |
![]() |
Виробник: Microchip Technology
Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
товару немає в наявності
Мінімальне замовлення: 150 шт
В кошику
од. на суму грн.
| APT30GT60BRDQ2G |
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Виробник: Microchip Technology
Description: IGBT NPT 600V 64A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 80µJ (on), 605µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 7.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
Description: IGBT NPT 600V 64A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 80µJ (on), 605µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 7.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
товару немає в наявності
Мінімальне замовлення: 90 шт
В кошику
од. на суму грн.
| APT30GT60BRG |
![]() |
Виробник: Microchip Technology
Description: IGBT NPT 600V 64A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 525µJ (on), 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
Description: IGBT NPT 600V 64A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 525µJ (on), 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
товару немає в наявності
В кошику
од. на суму грн.
| APT30M19JVFR |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 10 шт
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| APT30M19JVR |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
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| APT30M40JVFR |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 20 шт
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| APT30M40JVR |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 20 шт
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| APT30M60J |
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Виробник: Microchip Technology
Description: MOSFET N-CH 600V 31A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Power Dissipation (Max): 355W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Description: MOSFET N-CH 600V 31A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Power Dissipation (Max): 355W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| APT30M70BVFRG |
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Виробник: Microchip Technology
Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 40 шт
В кошику
од. на суму грн.
| APT30M70BVRG |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APT30M85BVRG |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 804.59 грн |
| APT30S20BCTG |
![]() |
Виробник: Microchip Technology
Description: DIODE ARRAY SCHOT 200V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE ARRAY SCHOT 200V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
на замовлення 269 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 312.98 грн |
| 100+ | 283.35 грн |














