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APT2X101S20J APT2X101S20J Microchip Technology 6839-apt2x101s20j-datasheet Description: DIODE MOD SCHOT 200V 120A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
1+2229.56 грн
100+1742.77 грн
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APT2X30D120J APT2X30D120J Microchip Technology 6158-apt2x31d120j-apt2x30d120j-datasheet Description: DIODE MODULE GP 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 204 шт:
термін постачання 21-31 дні (днів)
1+2037.94 грн
100+1593.63 грн
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APT2X30D20J APT2X30D20J Microchip Technology 6159-apt2x30d20j-apt2x31d20j-datasheet Description: DIODE MODULE GP 200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT2X30D30J APT2X30D30J Microchip Technology 6844-apt2x31d30j-apt2x30d30j-datasheet Description: DIODE MODULE 300V 30A ISOTOP
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APT2X30D60J APT2X30D60J Microchip Technology 6161-apt2x31d60j-apt2x30d60j-datasheet Description: DIODE MODULE GP 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT2X30DQ60J APT2X30DQ60J Microchip Technology index.php?option=com_docman&task=doc_download&gid=6849 Description: DIODE MODULE GP 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT2X31D120J APT2X31D120J Microchip Technology 6158-apt2x31d120j-apt2x30d120j-datasheet Description: DIODE MODULE 1.2KV 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+2318.38 грн
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APT2X31D40J APT2X31D40J Microchip Technology APT2X31_30D40J_F.pdf Description: DIODE MODULE GP 400V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
1+1477.06 грн
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APT2X31D60J APT2X31D60J Microchip Technology 6161-apt2x31d60j-apt2x30d60j-datasheet Description: DIODE MODULE 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
1+1710.62 грн
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APT2X31DQ120J APT2X31DQ120J Microchip Technology APT2X3xDQ120J.pdf Description: DIODE MODULE GP 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+1586.44 грн
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APT2X31DQ60J APT2X31DQ60J Microchip Technology Description: DIODE MODULE GP 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+1461.43 грн
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APT2X31S20J APT2X31S20J Microchip Technology APT2X31S20J_C.pdf Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
на замовлення 491 шт:
термін постачання 21-31 дні (днів)
1+1523.11 грн
100+1191.89 грн
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APT2X60D100J APT2X60D100J Microchip Technology 6163-apt2x61d100j-apt2x60d100j-datasheet Description: DIODE MODULE GP 1000V 55A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 55A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APT2X60D120J APT2X60D120J Microchip Technology 6164-apt2x61d120j-apt2x60d120j-datasheet Description: DIODE MODULE GP 1200V 53A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 53A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
1+2551.95 грн
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APT2X60D60J APT2X60D60J Microchip Technology 6854-apt2x61dc60j-apt2x60d60j-datasheet Description: DIODE MODULE GP 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
1+1865.23 грн
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APT2X60DQ120J APT2X60DQ120J Microchip Technology APT2X6xDQ120J.pdf Description: DIODE MODULE GP 1200V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 265 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+1759.97 грн
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APT2X60DQ60J APT2X60DQ60J Microchip Technology 6859-apt2x61dq60j-apt2x60dq60j-datasheet Description: DIODE MODULE 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT2X61D40J APT2X61D40J Microchip Technology APT2X61_60D40J_F.pdf Description: DIODE MODULE GP 400V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
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APT2X61D60J APT2X61D60J Microchip Technology 6854-apt2x61dc60j-apt2x60d60j-datasheet Description: DIODE MODULE GP 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 126 шт:
термін постачання 21-31 дні (днів)
1+1865.23 грн
100+1457.01 грн
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APT2X61DQ100J APT2X61DQ100J Microchip Technology 6857-apt2x61dq100j-apt2x60dq100j-datasheet Description: DIODE MODULE GP 1000V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 235 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
1+1724.60 грн
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APT2X61DQ120J APT2X61DQ120J Microchip Technology APT2X6xDQ120J.pdf Description: DIODE MODULE GP 1200V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 265 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+1679.37 грн
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APT2X61DQ60J APT2X61DQ60J Microchip Technology 6859-apt2x61dq60j-apt2x60dq60j-datasheet Description: DIODE MODULE GP 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
1+1630.02 грн
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APT2X61S20J APT2X61S20J Microchip Technology 6860-apt2x61s20j-datasheet Description: DIODE MOD SCHOTT 200V 75A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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APT30D100BCAG APT30D100BCAG Microchip Technology APT30D100BCA_G.pdf Description: DIODE ARRAY GP 1000V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APT30D100BCTG APT30D100BCTG Microchip Technology 6175-apt30d100bctg-datasheet Description: DIODE ARRAY GP 1000V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APT30D100BG APT30D100BG Microchip Technology 6173-apt30d100bg-apt30d100sg-datasheet Description: DIODE STANDARD 1000V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
на замовлення 1083 шт:
термін постачання 21-31 дні (днів)
2+236.86 грн
100+184.67 грн
Мінімальне замовлення: 2
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APT30D100BHBG APT30D100BHBG Microchip Technology 6176-apt30d100bhbg-datasheet Description: DIODE ARRAY GP 1000V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
1+461.37 грн
100+360.12 грн
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APT30D120BCTG APT30D120BCTG Microchip Technology 6861-apt30d120bctg-datasheet Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT30D120BG APT30D120BG Microchip Technology 6177-apt30d120bg-apt30d120sg-datasheet Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
2+191.62 грн
100+148.49 грн
Мінімальне замовлення: 2
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APT30D120SG APT30D120SG Microchip Technology 6177-apt30d120bg-apt30d120sg-datasheet Description: DIODE GEN PURP 1.2KV 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT30D20BCAG APT30D20BCAG Microchip Technology 6179-apt30d20bcag-datasheet Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
1+477.82 грн
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APT30D20BCTG APT30D20BCTG Microchip Technology 6180-apt30d20bctg-datasheet Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT30D20BG APT30D20BG Microchip Technology 6178-apt30d20bg-apt30d20sg-datasheet Description: DIODE STD 200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
на замовлення 354 шт:
термін постачання 21-31 дні (днів)
2+231.92 грн
100+182.90 грн
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APT30D30BG APT30D30BG Microchip Technology 6862-apt30d30bg-datasheet Description: DIODE GP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
2+217.94 грн
100+171.61 грн
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APT30D40BCTG APT30D40BCTG Microchip Technology 123917-apt30d40bctg-datasheet Description: DIODE ARRAY GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
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APT30D40BG APT30D40BG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: DIODE GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
2+225.34 грн
100+177.59 грн
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APT30D40SG APT30D40SG Microchip Technology 6181-apt30d40b-s-g-f-pdf Description: DIODE GEN PURP 400V 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
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APT30D60BCAG APT30D60BCAG Microchip Technology 6184-apt30d60bcag-datasheet Description: DIODE ARRAY GP 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 27A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
1+439.17 грн
100+343.80 грн
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APT30D60BCTG APT30D60BCTG Microchip Technology 6185-apt30d60bctg-datasheet Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
1+390.65 грн
100+303.92 грн
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APT30D60BG APT30D60BG Microchip Technology Microsemi_APT30D60BG_Fast_Soft_Recovery_Rectifier_Diode_I.pdf Description: DIODE STD 600V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 4757 шт:
термін постачання 21-31 дні (днів)
3+162.84 грн
100+126.54 грн
Мінімальне замовлення: 3
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APT30D60BHBG APT30D60BHBG Microchip Technology APT30D60BHB(G)_B.pdf Description: DIODE ARRAY GP 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 27A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 379 шт:
термін постачання 21-31 дні (днів)
1+430.12 грн
100+336.87 грн
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APT30D60SG APT30D60SG Microchip Technology Microsemi_APT30D60BG_Fast_Soft_Recovery_Rectifier_Diode_I.pdf Description: DIODE STANDARD 600V 30A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
2+267.28 грн
100+208.95 грн
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APT30DQ100KG APT30DQ100KG Microchip Technology 123694-apt30dq100kg-datasheet Description: DIODE STANDARD 1000V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 468 шт:
термін постачання 21-31 дні (днів)
5+73.19 грн
100+58.09 грн
Мінімальне замовлення: 5
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APT30DQ120BCTG APT30DQ120BCTG Microchip Technology 123673-apt30dq120bctg-datasheet Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
1+351.17 грн
100+275.96 грн
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APT30DQ120BG APT30DQ120BG Microchip Technology 123673-apt30dq120bctg-datasheet Description: DIODE STD 1200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 349 шт:
термін постачання 21-31 дні (днів)
3+131.59 грн
100+102.35 грн
Мінімальне замовлення: 3
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APT30DQ120KG APT30DQ120KG Microchip Technology 123697-apt30dq120kg-datasheet Description: DIODE GP 1.2KV 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
4+98.69 грн
Мінімальне замовлення: 4
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APT30DQ60BCTG APT30DQ60BCTG Microchip Technology 123681-apt30dq60bctg-datasheet Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
2+197.38 грн
100+153.83 грн
Мінімальне замовлення: 2
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APT30DQ60KG APT30DQ60KG Microchip Technology 123685-apt30dq60kg-datasheet Description: DIODE GP 600V 30A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 1246 шт:
термін постачання 21-31 дні (днів)
5+65.79 грн
100+51.57 грн
Мінімальне замовлення: 5
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APT30DS60BG APT30DS60BG Microchip Technology 6888-apt30ds60bg-apt30ds60sg-datasheet Description: DIODE ARRAY GP 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT30GN60BDQ2G APT30GN60BDQ2G Microchip Technology 6899-apt30gn60bdq2g-apt30gn60sdq2g-datasheet Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
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APT30GN60BG APT30GN60BG Microchip Technology 6898-apt30gn60bg-apt30gn60sg-datasheet Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
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APT30GT60BRDQ2G APT30GT60BRDQ2G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 600V 64A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 80µJ (on), 605µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 7.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
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APT30GT60BRG APT30GT60BRG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 600V 64A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 525µJ (on), 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
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APT30M19JVFR APT30M19JVFR Microchip Technology 6206-apt30m19jvfr-datasheet Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
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APT30M19JVR APT30M19JVR Microchip Technology 6207-apt30m19jvr-datasheet Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
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APT30M40JVFR APT30M40JVFR Microchip Technology 6217-apt30m40jvfr-datasheet Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
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APT30M40JVR APT30M40JVR Microchip Technology 6218-apt30m40jvr-datasheet Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
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APT30M60J APT30M60J Microchip Technology 6927-apt30m60j-datasheet Description: MOSFET N-CH 600V 31A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Power Dissipation (Max): 355W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
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APT30M70BVFRG APT30M70BVFRG Microchip Technology 6930-apt30m70bvfrg-datasheet Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
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APT30M70BVRG APT30M70BVRG Microchip Technology 6930-apt30m70bvfrg-datasheet Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
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APT2X101S20J 6839-apt2x101s20j-datasheet
APT2X101S20J
Виробник: Microchip Technology
Description: DIODE MOD SCHOT 200V 120A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2229.56 грн
100+1742.77 грн
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APT2X30D120J 6158-apt2x31d120j-apt2x30d120j-datasheet
APT2X30D120J
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 204 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2037.94 грн
100+1593.63 грн
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APT2X30D20J 6159-apt2x30d20j-apt2x31d20j-datasheet
APT2X30D20J
Виробник: Microchip Technology
Description: DIODE MODULE GP 200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT2X30D30J 6844-apt2x31d30j-apt2x30d30j-datasheet
APT2X30D30J
Виробник: Microchip Technology
Description: DIODE MODULE 300V 30A ISOTOP
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APT2X30D60J 6161-apt2x31d60j-apt2x30d60j-datasheet
APT2X30D60J
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT2X30DQ60J index.php?option=com_docman&task=doc_download&gid=6849
APT2X30DQ60J
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT2X31D120J 6158-apt2x31d120j-apt2x30d120j-datasheet
APT2X31D120J
Виробник: Microchip Technology
Description: DIODE MODULE 1.2KV 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2318.38 грн
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APT2X31D40J APT2X31_30D40J_F.pdf
APT2X31D40J
Виробник: Microchip Technology
Description: DIODE MODULE GP 400V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1477.06 грн
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APT2X31D60J 6161-apt2x31d60j-apt2x30d60j-datasheet
APT2X31D60J
Виробник: Microchip Technology
Description: DIODE MODULE 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1710.62 грн
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APT2X31DQ120J APT2X3xDQ120J.pdf
APT2X31DQ120J
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1586.44 грн
В кошику  од. на суму  грн.
APT2X31DQ60J
APT2X31DQ60J
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 30A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1461.43 грн
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APT2X31S20J APT2X31S20J_C.pdf
APT2X31S20J
Виробник: Microchip Technology
Description: DIODE MOD SCHOTT 200V 45A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
на замовлення 491 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1523.11 грн
100+1191.89 грн
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APT2X60D100J 6163-apt2x61d100j-apt2x60d100j-datasheet
APT2X60D100J
Виробник: Microchip Technology
Description: DIODE MODULE GP 1000V 55A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 55A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APT2X60D120J 6164-apt2x61d120j-apt2x60d120j-datasheet
APT2X60D120J
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 53A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 53A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2551.95 грн
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APT2X60D60J 6854-apt2x61dc60j-apt2x60d60j-datasheet
APT2X60D60J
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1865.23 грн
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APT2X60DQ120J APT2X6xDQ120J.pdf
APT2X60DQ120J
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 265 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1759.97 грн
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APT2X60DQ60J 6859-apt2x61dq60j-apt2x60dq60j-datasheet
APT2X60DQ60J
Виробник: Microchip Technology
Description: DIODE MODULE 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT2X61D40J APT2X61_60D40J_F.pdf
APT2X61D40J
Виробник: Microchip Technology
Description: DIODE MODULE GP 400V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
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APT2X61D60J 6854-apt2x61dc60j-apt2x60d60j-datasheet
APT2X61D60J
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 126 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1865.23 грн
100+1457.01 грн
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APT2X61DQ100J 6857-apt2x61dq100j-apt2x60dq100j-datasheet
APT2X61DQ100J
Виробник: Microchip Technology
Description: DIODE MODULE GP 1000V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 235 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1724.60 грн
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APT2X61DQ120J APT2X6xDQ120J.pdf
APT2X61DQ120J
Виробник: Microchip Technology
Description: DIODE MODULE GP 1200V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 265 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1679.37 грн
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APT2X61DQ60J 6859-apt2x61dq60j-apt2x60dq60j-datasheet
APT2X61DQ60J
Виробник: Microchip Technology
Description: DIODE MODULE GP 600V 60A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1630.02 грн
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APT2X61S20J 6860-apt2x61s20j-datasheet
APT2X61S20J
Виробник: Microchip Technology
Description: DIODE MOD SCHOTT 200V 75A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOTOP®
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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APT30D100BCAG APT30D100BCA_G.pdf
APT30D100BCAG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APT30D100BCTG 6175-apt30d100bctg-datasheet
APT30D100BCTG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APT30D100BG 6173-apt30d100bg-apt30d100sg-datasheet
APT30D100BG
Виробник: Microchip Technology
Description: DIODE STANDARD 1000V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
на замовлення 1083 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+236.86 грн
100+184.67 грн
Мінімальне замовлення: 2
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APT30D100BHBG 6176-apt30d100bhbg-datasheet
APT30D100BHBG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1000V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 290 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+461.37 грн
100+360.12 грн
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APT30D120BCTG 6861-apt30d120bctg-datasheet
APT30D120BCTG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT30D120BG 6177-apt30d120bg-apt30d120sg-datasheet
APT30D120BG
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+191.62 грн
100+148.49 грн
Мінімальне замовлення: 2
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APT30D120SG 6177-apt30d120bg-apt30d120sg-datasheet
APT30D120SG
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT30D20BCAG 6179-apt30d20bcag-datasheet
APT30D20BCAG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+477.82 грн
В кошику  од. на суму  грн.
APT30D20BCTG 6180-apt30d20bctg-datasheet
APT30D20BCTG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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APT30D20BG 6178-apt30d20bg-apt30d20sg-datasheet
APT30D20BG
Виробник: Microchip Technology
Description: DIODE STD 200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
на замовлення 354 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+231.92 грн
100+182.90 грн
Мінімальне замовлення: 2
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APT30D30BG 6862-apt30d30bg-datasheet
APT30D30BG
Виробник: Microchip Technology
Description: DIODE GP 300V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+217.94 грн
100+171.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
APT30D40BCTG 123917-apt30d40bctg-datasheet
APT30D40BCTG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
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APT30D40BG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT30D40BG
Виробник: Microchip Technology
Description: DIODE GP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+225.34 грн
100+177.59 грн
Мінімальне замовлення: 2
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APT30D40SG 6181-apt30d40b-s-g-f-pdf
APT30D40SG
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 30A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
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APT30D60BCAG 6184-apt30d60bcag-datasheet
APT30D60BCAG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 27A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+439.17 грн
100+343.80 грн
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APT30D60BCTG 6185-apt30d60bctg-datasheet
APT30D60BCTG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+390.65 грн
100+303.92 грн
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APT30D60BG Microsemi_APT30D60BG_Fast_Soft_Recovery_Rectifier_Diode_I.pdf
APT30D60BG
Виробник: Microchip Technology
Description: DIODE STD 600V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 4757 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+162.84 грн
100+126.54 грн
Мінімальне замовлення: 3
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APT30D60BHBG APT30D60BHB(G)_B.pdf
APT30D60BHBG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 27A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 379 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+430.12 грн
100+336.87 грн
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APT30D60SG Microsemi_APT30D60BG_Fast_Soft_Recovery_Rectifier_Diode_I.pdf
APT30D60SG
Виробник: Microchip Technology
Description: DIODE STANDARD 600V 30A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+267.28 грн
100+208.95 грн
Мінімальне замовлення: 2
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APT30DQ100KG 123694-apt30dq100kg-datasheet
APT30DQ100KG
Виробник: Microchip Technology
Description: DIODE STANDARD 1000V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 468 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.19 грн
100+58.09 грн
Мінімальне замовлення: 5
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APT30DQ120BCTG 123673-apt30dq120bctg-datasheet
APT30DQ120BCTG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 348 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+351.17 грн
100+275.96 грн
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APT30DQ120BG 123673-apt30dq120bctg-datasheet
APT30DQ120BG
Виробник: Microchip Technology
Description: DIODE STD 1200V 30A TO247 [B]
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 349 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+131.59 грн
100+102.35 грн
Мінімальне замовлення: 3
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APT30DQ120KG 123697-apt30dq120kg-datasheet
APT30DQ120KG
Виробник: Microchip Technology
Description: DIODE GP 1.2KV 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+98.69 грн
Мінімальне замовлення: 4
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APT30DQ60BCTG 123681-apt30dq60bctg-datasheet
APT30DQ60BCTG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+197.38 грн
100+153.83 грн
Мінімальне замовлення: 2
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APT30DQ60KG 123685-apt30dq60kg-datasheet
APT30DQ60KG
Виробник: Microchip Technology
Description: DIODE GP 600V 30A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
на замовлення 1246 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+65.79 грн
100+51.57 грн
Мінімальне замовлення: 5
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APT30DS60BG 6888-apt30ds60bg-apt30ds60sg-datasheet
APT30DS60BG
Виробник: Microchip Technology
Description: DIODE ARRAY GP 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 4 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT30GN60BDQ2G 6899-apt30gn60bdq2g-apt30gn60sdq2g-datasheet
APT30GN60BDQ2G
Виробник: Microchip Technology
Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
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APT30GN60BG 6898-apt30gn60bg-apt30gn60sg-datasheet
APT30GN60BG
Виробник: Microchip Technology
Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
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APT30GT60BRDQ2G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT30GT60BRDQ2G
Виробник: Microchip Technology
Description: IGBT NPT 600V 64A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 80µJ (on), 605µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 7.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
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APT30GT60BRG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT30GT60BRG
Виробник: Microchip Technology
Description: IGBT NPT 600V 64A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 525µJ (on), 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
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APT30M19JVFR 6206-apt30m19jvfr-datasheet
APT30M19JVFR
Виробник: Microchip Technology
Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
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APT30M19JVR 6207-apt30m19jvr-datasheet
APT30M19JVR
Виробник: Microchip Technology
Description: MOSFET N-CH 300V 130A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V
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APT30M40JVFR 6217-apt30m40jvfr-datasheet
APT30M40JVFR
Виробник: Microchip Technology
Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
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APT30M40JVR 6218-apt30m40jvr-datasheet
APT30M40JVR
Виробник: Microchip Technology
Description: MOSFET N-CH 300V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
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APT30M60J 6927-apt30m60j-datasheet
APT30M60J
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 31A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Power Dissipation (Max): 355W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
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APT30M70BVFRG 6930-apt30m70bvfrg-datasheet
APT30M70BVFRG
Виробник: Microchip Technology
Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
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APT30M70BVRG 6930-apt30m70bvfrg-datasheet
APT30M70BVRG
Виробник: Microchip Technology
Description: MOSFET N-CH 300V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
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