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APT41M80L APT41M80L Microchip Technology APT41M80B2_L_C.pdf Description: MOSFET N-CH 800V 43A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 40 шт
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APT43M60L APT43M60L Microchip Technology 7040-apt43m60b2-apt43m60l-datasheet Description: MOSFET N-CH 600V 45A TO264
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+863.16 грн
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APT44F80B2 APT44F80B2 Microchip Technology 7042-apt44f80b2-datasheet Description: MOSFET N-CH 800V 47A T-MAX
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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APT44F80L APT44F80L Microchip Technology 7042-apt44f80b2-datasheet Description: MOSFET N-CH 800V 47A TO264
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
товару немає в наявності
 Мінімальне замовлення: 25 шт
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APT45GP120B2DQ2G APT45GP120B2DQ2G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT PT 1200V 113A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/100ns
Switching Energy: 900µJ (on), 905µJ (off)
Test Condition: 600V, 45A, 5Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 113 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 625 W
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+1426.47 грн
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APT45GP120BG APT45GP120BG Microchip Technology APT45GP120B_C.pdf Description: IGBT PT 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/102ns
Switching Energy: 900µJ (on), 904µJ (off)
Test Condition: 600V, 45A, 5Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 625 W
товару немає в наявності
 Мінімальне замовлення: 30 шт
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APT45GP120J APT45GP120J Microchip Technology 6279-apt45gp120j-datasheet Description: IGBT MOD 1200V 75A 329W ISOTOP
Input Capacitance (Cies) @ Vce: 3.94 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 329 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 20 шт
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APT45GP120JDQ2 APT45GP120JDQ2 Microchip Technology APT45GP120JDQ2_A.pdf Description: IGBT MOD 1200V 75A 329W ISOTOP
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 329 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 20 шт
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APT45M100J APT45M100J Microchip Technology 7053-apt45m100j-datasheet Description: MOSFET N-CH 1000V 45A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 10 шт
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APT47M60J APT47M60J Microchip Technology 7064-apt47m60j-datasheet Description: MOSFET N-CH 600V 49A ISOTOP
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+2281.71 грн
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APT47N60BC3G APT47N60BC3G Microchip Technology APT47N60B_SC3(G)_F.pdf Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+934.36 грн
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APT47N60SC3G APT47N60SC3G Microchip Technology APT47N60B_SC3(G)_F.pdf Description: MOSFET N-CH 600V 47A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+1010.31 грн
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APT48M80B2 APT48M80B2 Microchip Technology 7069-apt48m80b2-datasheet Description: MOSFET N-CH 800V 49A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 9330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 30 шт
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APT48M80L APT48M80L Microchip Technology 7069-apt48m80b2-datasheet Description: MOSFET N-CH 800V 49A TO264
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+1811.76 грн
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APT4F120K APT4F120K Microchip Technology APT4F120K.pdf Description: MOSFET N-CH 1200V 4A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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APT4M120K APT4M120K Microchip Technology Description: MOSFET N-CH 1200V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220 [K]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
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APT5010B2FLLG APT5010B2FLLG Microchip Technology APT5010%28B2%2CL%29FLL.pdf Description: MOSFET N-CH 500V 46A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
1+1318.87 грн
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APT5010B2LLG APT5010B2LLG Microchip Technology APT5010B2_LLL(G)_D.pdf Description: MOSFET N-CH 500V 46A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 40 шт
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APT5010JLL APT5010JLL Microchip Technology 6291-apt5010jll-datasheet Description: MOSFET N-CH 500V 41A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 20.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 20 шт
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APT5010JVFR APT5010JVFR Microchip Technology APT5010JVFR_B.pdf Description: MOSFET N-CH 500V 44A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+2760.37 грн
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APT5010LFLLG APT5010LFLLG Microchip Technology APT5010%28B2%2CL%29FLL.pdf Description: MOSFET N-CH 500V 46A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
1+1309.37 грн
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APT5010LLLG APT5010LLLG Microchip Technology 6287-apt5010b2llg-apt5010lllg-datasheet Description: MOSFET N-CH 500V 46A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+1281.68 грн
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APT5014BLLG APT5014BLLG Microchip Technology APT5014B_SLL(G)_B.pdf Description: MOSFET N-CH 500V 35A TO247
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 403W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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APT5014SLLG APT5014SLLG Microchip Technology APT5014B_SLL(G)_B.pdf Description: MOSFET N-CH 500V 35A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 403W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 40 шт
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APT5016BFLLG APT5016BFLLG Microchip Technology APT5016B_SFLL_C.pdf Description: MOSFET N-CH 500V 30A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 40 шт
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APT5016BLLG APT5016BLLG Microchip Technology 6304-apt5016bllg-apt5016sllg-datasheet Description: MOSFET N-CH 500V 30A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT5018BLLG APT5018BLLG Microchip Technology APT5018_B%2CS_LL.pdf Description: MOSFET N-CH 500V 27A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT5024BFLLG APT5024BFLLG Microchip Technology 7080-apt5024bfllg-apt5024sfllg-datasheet Description: MOSFET N-CH 500V 22A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT5024BLLG APT5024BLLG Microchip Technology 6316-apt5024bllg-apt5024sllg-datasheet Description: MOSFET N-CH 500V 22A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 265W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT50GF120B2RG APT50GF120B2RG Microchip Technology 7089-apt50gf120b2g-apt50gf120lrg-datasheet Description: IGBT NPT 1200V 135A
Power - Max: 781 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
Gate Charge: 340 nC
Test Condition: 800V, 50A, 1Ohm, 15V
Switching Energy: 3.6mJ (on), 2.64mJ (off)
Td (on/off) @ 25°C: 25ns/260ns
IGBT Type: NPT
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT50GF120JRDQ3 APT50GF120JRDQ3 Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MOD 1200V 120A 521W ISOTOP
Input Capacitance (Cies) @ Vce: 5.32 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 521 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 120 A
IGBT Type: NPT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT50GF120LRG APT50GF120LRG Microchip Technology 7089-apt50gf120b2g-apt50gf120lrg-datasheet Description: IGBT NPT 1200V 135A TO264
Power - Max: 781 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
Part Status: Active
Gate Charge: 340 nC
Test Condition: 800V, 50A, 1Ohm, 15V
Switching Energy: 3.6mJ (on), 2.64mJ (off)
Td (on/off) @ 25°C: 25ns/260ns
IGBT Type: NPT
Supplier Device Package: TO-264 [L]
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT50GN120B2G APT50GN120B2G Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT FIELD STOP 1200V 134A
Power - Max: 543 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 134 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 800V, 50A, 2.2Ohm, 15V
Switching Energy: 4495µJ (off)
Td (on/off) @ 25°C: 28ns/320ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT50GN120L2DQ2G APT50GN120L2DQ2G Microchip Technology 6324-apt50gn120l2dq2g-datasheet Description: IGBT NPT FIELD STOP 1200V 134A
Power - Max: 543 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 134 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 800V, 50A, 2.2Ohm, 15V
Switching Energy: 4495µJ (off)
Td (on/off) @ 25°C: 28ns/320ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
1+1351.31 грн
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APT50GN60BDQ2G APT50GN60BDQ2G Microchip Technology 7095-apt50gn60bdq2g-apt50gn60sdq2g-datasheet Description: IGBT TRENCH FS 600V 107A TO247
Power - Max: 366 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 107 A
Part Status: Active
Gate Charge: 325 nC
Test Condition: 400V, 50A, 4.3Ohm, 15V
Switching Energy: 1185µJ (on), 1565µJ (off)
Td (on/off) @ 25°C: 20ns/230ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
1+547.48 грн
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APT50GN60BG APT50GN60BG Microchip Technology 7094-apt50gn60bg-apt50gn60sg-datasheet Description: IGBT TRENCH FS 600V 107A TO247
Power - Max: 366 W
Current - Collector Pulsed (Icm): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 107 A
Part Status: Active
Gate Charge: 325 nC
Test Condition: 400V, 50A, 4.3Ohm, 15V
Switching Energy: 1185µJ (on), 1565µJ (off)
Td (on/off) @ 25°C: 20ns/230ns
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
1+405.08 грн
100+317.04 грн
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APT50GP60B2DQ2G APT50GP60B2DQ2G Microchip Technology 6327-apt50gp60b2dq2-datasheet Description: IGBT PT 600V 150A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/85ns
Switching Energy: 465µJ (on), 635µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 625 W
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APT50GP60BG APT50GP60BG Microchip Technology 7096-apt50gp60bg-apt50gp60sg-datasheet Description: IGBT PT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/83ns
Switching Energy: 465µJ (on), 637µJ (off)
Test Condition: 400V, 50A, 5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 625 W
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APT50GP60J APT50GP60J Microchip Technology APT50GP60J_A.pdf Description: IGBT MOD 600V 100A 329W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V
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APT50GP60JDQ2 APT50GP60JDQ2 Microchip Technology 6329-apt50gp60jdq2-datasheet Description: IGBT MOD 600V 100A 329W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 525 µA
Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V
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APT50GT120JRDQ2 APT50GT120JRDQ2 Microchip Technology APT50GT120JRDQ2.pdf Description: IGBT MOD 1200V 72A 379W ISOTOP
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 400 µA
Power - Max: 379 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 72 A
IGBT Type: NPT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT50GT60BRDQ2G APT50GT60BRDQ2G Microchip Technology APT50GT60BRDQ2(G)_C.pdf Description: IGBT NPT 600V 110A TO247
Power - Max: 446 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 110 A
Gate Charge: 240 nC
Test Condition: 400V, 50A, 5Ohm, 15V
Switching Energy: 995µJ (on), 1070µJ (off)
Td (on/off) @ 25°C: 14ns/240ns
IGBT Type: NPT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Reverse Recovery Time (trr): 22 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT50GT60BRG APT50GT60BRG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 600V 110A TO247
Power - Max: 446 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 110 A
Gate Charge: 240 nC
Test Condition: 400V, 50A, 4.3Ohm, 15V
Switching Energy: 995µJ (on), 1070µJ (off)
Td (on/off) @ 25°C: 14ns/240ns
IGBT Type: NPT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT50M38JLL APT50M38JLL Microchip Technology 6334-apt50m38jll-datasheet Description: MOSFET N-CH 500V 88A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
1+5783.40 грн
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APT50M50JLL APT50M50JLL Microchip Technology 6336-apt50m50jll-datasheet Description: MOSFET N-CH 500V 71A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 10550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 35.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+4401.24 грн
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APT50M65JFLL APT50M65JFLL Microchip Technology APT50M65JFLL_D.pdf Description: MOSFET N-CH 500V 58A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7010 pF @ 25 V
на замовлення 432 шт:
термін постачання 21-31 дні (днів)
1+3116.39 грн
100+2435.69 грн
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APT50M65JLL APT50M65JLL Microchip Technology 6348-apt50m65jll-datasheet Description: MOSFET N-CH 500V 58A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 7010 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+3324.47 грн
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APT50M75B2LLG APT50M75B2LLG Microchip Technology 6350-apt50m75b2llg-apt50m75lllg-datasheet Description: MOSFET N-CH 500V 57A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 570W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT50M75JFLL APT50M75JFLL Microchip Technology 6351-apt50m75jfll-datasheet Description: MOSFET N-CH 500V 51A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT50M75LLLG APT50M75LLLG Microchip Technology 6350-apt50m75b2llg-apt50m75lllg-datasheet Description: MOSFET N-CH 500V 57A TO264
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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 Мінімальне замовлення: 30 шт
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APT51M50J APT51M50J Microchip Technology 7132-apt51m50j-datasheet Description: MOSFET N-CH 500V 51A ISOTOP
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 Мінімальне замовлення: 20 шт
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APT53F80J APT53F80J Microchip Technology APT53F80J_D.pdf Description: MOSFET N-CH 800V 57A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
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APT56M50L APT56M50L Microchip Technology 7153-apt56m50b2-apt56m50l-datasheet Description: MOSFET N-CH 500V 56A TO264
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 217 шт:
термін постачання 21-31 дні (днів)
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APT56M60L Microchip Technology Description: MOSFET N-CH 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
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APT58M50J APT58M50J Microchip Technology 7162-apt58m50j-datasheet Description: MOSFET N-CH 500V 58A ISOTOP
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APT58M80J APT58M80J Microchip Technology APT58M80J_C.pdf Description: MOSFET N-CH 800V 60A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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APT6010B2LLG APT6010B2LLG Microchip Technology APT6010B2_LLL(G)_F.pdf Description: MOSFET N-CH 600V 54A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 690W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT6010JFLL APT6010JFLL Microchip Technology APT6010JFLL_E.pdf Description: MOSFET N-CH 600V 47A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT6010JLL APT6010JLL Microchip Technology APT6010JLL_E.pdf Description: MOSFET N-CH 600V 47A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT6010LLLG APT6010LLLG Microchip Technology APT6010B2_LLL(G)_F.pdf Description: MOSFET N-CH 600V 54A TO264
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
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APT41M80L APT41M80B2_L_C.pdf
APT41M80L
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 43A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
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APT43M60L 7040-apt43m60b2-apt43m60l-datasheet
APT43M60L
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 45A TO264
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
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1+863.16 грн
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APT44F80B2 7042-apt44f80b2-datasheet
APT44F80B2
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 47A T-MAX
на замовлення 1 шт:
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APT44F80L 7042-apt44f80b2-datasheet
APT44F80L
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 47A TO264
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
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APT45GP120B2DQ2G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT45GP120B2DQ2G
Виробник: Microchip Technology
Description: IGBT PT 1200V 113A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/100ns
Switching Energy: 900µJ (on), 905µJ (off)
Test Condition: 600V, 45A, 5Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 113 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 625 W
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
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1+1426.47 грн
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APT45GP120BG APT45GP120B_C.pdf
APT45GP120BG
Виробник: Microchip Technology
Description: IGBT PT 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/102ns
Switching Energy: 900µJ (on), 904µJ (off)
Test Condition: 600V, 45A, 5Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 625 W
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APT45GP120J 6279-apt45gp120j-datasheet
APT45GP120J
Виробник: Microchip Technology
Description: IGBT MOD 1200V 75A 329W ISOTOP
Input Capacitance (Cies) @ Vce: 3.94 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 329 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT45GP120JDQ2 APT45GP120JDQ2_A.pdf
APT45GP120JDQ2
Виробник: Microchip Technology
Description: IGBT MOD 1200V 75A 329W ISOTOP
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 329 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT45M100J 7053-apt45m100j-datasheet
APT45M100J
Виробник: Microchip Technology
Description: MOSFET N-CH 1000V 45A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT47M60J 7064-apt47m60j-datasheet
APT47M60J
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 49A ISOTOP
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
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1+2281.71 грн
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APT47N60BC3G APT47N60B_SC3(G)_F.pdf
APT47N60BC3G
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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1+934.36 грн
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APT47N60SC3G APT47N60B_SC3(G)_F.pdf
APT47N60SC3G
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 47A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1010.31 грн
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APT48M80B2 7069-apt48m80b2-datasheet
APT48M80B2
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 49A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 9330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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Мінімальне замовлення: 30 шт
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APT48M80L 7069-apt48m80b2-datasheet
APT48M80L
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 49A TO264
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1811.76 грн
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APT4F120K APT4F120K.pdf
APT4F120K
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 4A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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APT4M120K
APT4M120K
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220 [K]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
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APT5010B2FLLG APT5010%28B2%2CL%29FLL.pdf
APT5010B2FLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 46A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
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1+1318.87 грн
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APT5010B2LLG APT5010B2_LLL(G)_D.pdf
APT5010B2LLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 46A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
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Мінімальне замовлення: 40 шт
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APT5010JLL 6291-apt5010jll-datasheet
APT5010JLL
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 41A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 20.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Мінімальне замовлення: 20 шт
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APT5010JVFR APT5010JVFR_B.pdf
APT5010JVFR
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 44A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2760.37 грн
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APT5010LFLLG APT5010%28B2%2CL%29FLL.pdf
APT5010LFLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 46A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1309.37 грн
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APT5010LLLG 6287-apt5010b2llg-apt5010lllg-datasheet
APT5010LLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 46A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1281.68 грн
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APT5014BLLG APT5014B_SLL(G)_B.pdf
APT5014BLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 35A TO247
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 403W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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APT5014SLLG APT5014B_SLL(G)_B.pdf
APT5014SLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 35A D3PAK
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 403W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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Мінімальне замовлення: 40 шт
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APT5016BFLLG APT5016B_SFLL_C.pdf
APT5016BFLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 30A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 40 шт
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APT5016BLLG 6304-apt5016bllg-apt5016sllg-datasheet
APT5016BLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 30A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 50 шт
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APT5018BLLG APT5018_B%2CS_LL.pdf
APT5018BLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 27A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 60 шт
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APT5024BFLLG 7080-apt5024bfllg-apt5024sfllg-datasheet
APT5024BFLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 22A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 70 шт
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APT5024BLLG 6316-apt5024bllg-apt5024sllg-datasheet
APT5024BLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 22A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 265W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 70 шт
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APT50GF120B2RG 7089-apt50gf120b2g-apt50gf120lrg-datasheet
APT50GF120B2RG
Виробник: Microchip Technology
Description: IGBT NPT 1200V 135A
Power - Max: 781 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
Gate Charge: 340 nC
Test Condition: 800V, 50A, 1Ohm, 15V
Switching Energy: 3.6mJ (on), 2.64mJ (off)
Td (on/off) @ 25°C: 25ns/260ns
IGBT Type: NPT
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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Мінімальне замовлення: 30 шт
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APT50GF120JRDQ3 High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT50GF120JRDQ3
Виробник: Microchip Technology
Description: IGBT MOD 1200V 120A 521W ISOTOP
Input Capacitance (Cies) @ Vce: 5.32 nF @ 25 V
Current - Collector Cutoff (Max): 750 µA
Power - Max: 521 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 120 A
IGBT Type: NPT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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Мінімальне замовлення: 10 шт
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APT50GF120LRG 7089-apt50gf120b2g-apt50gf120lrg-datasheet
APT50GF120LRG
Виробник: Microchip Technology
Description: IGBT NPT 1200V 135A TO264
Power - Max: 781 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
Part Status: Active
Gate Charge: 340 nC
Test Condition: 800V, 50A, 1Ohm, 15V
Switching Energy: 3.6mJ (on), 2.64mJ (off)
Td (on/off) @ 25°C: 25ns/260ns
IGBT Type: NPT
Supplier Device Package: TO-264 [L]
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT50GN120B2G High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT50GN120B2G
Виробник: Microchip Technology
Description: IGBT NPT FIELD STOP 1200V 134A
Power - Max: 543 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 134 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 800V, 50A, 2.2Ohm, 15V
Switching Energy: 4495µJ (off)
Td (on/off) @ 25°C: 28ns/320ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT50GN120L2DQ2G 6324-apt50gn120l2dq2g-datasheet
APT50GN120L2DQ2G
Виробник: Microchip Technology
Description: IGBT NPT FIELD STOP 1200V 134A
Power - Max: 543 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 134 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 800V, 50A, 2.2Ohm, 15V
Switching Energy: 4495µJ (off)
Td (on/off) @ 25°C: 28ns/320ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1351.31 грн
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APT50GN60BDQ2G 7095-apt50gn60bdq2g-apt50gn60sdq2g-datasheet
APT50GN60BDQ2G
Виробник: Microchip Technology
Description: IGBT TRENCH FS 600V 107A TO247
Power - Max: 366 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 107 A
Part Status: Active
Gate Charge: 325 nC
Test Condition: 400V, 50A, 4.3Ohm, 15V
Switching Energy: 1185µJ (on), 1565µJ (off)
Td (on/off) @ 25°C: 20ns/230ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+547.48 грн
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APT50GN60BG 7094-apt50gn60bg-apt50gn60sg-datasheet
APT50GN60BG
Виробник: Microchip Technology
Description: IGBT TRENCH FS 600V 107A TO247
Power - Max: 366 W
Current - Collector Pulsed (Icm): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 107 A
Part Status: Active
Gate Charge: 325 nC
Test Condition: 400V, 50A, 4.3Ohm, 15V
Switching Energy: 1185µJ (on), 1565µJ (off)
Td (on/off) @ 25°C: 20ns/230ns
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+405.08 грн
100+317.04 грн
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APT50GP60B2DQ2G 6327-apt50gp60b2dq2-datasheet
APT50GP60B2DQ2G
Виробник: Microchip Technology
Description: IGBT PT 600V 150A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/85ns
Switching Energy: 465µJ (on), 635µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 625 W
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Мінімальне замовлення: 40 шт
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APT50GP60BG 7096-apt50gp60bg-apt50gp60sg-datasheet
APT50GP60BG
Виробник: Microchip Technology
Description: IGBT PT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/83ns
Switching Energy: 465µJ (on), 637µJ (off)
Test Condition: 400V, 50A, 5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 625 W
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Мінімальне замовлення: 40 шт
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APT50GP60J APT50GP60J_A.pdf
APT50GP60J
Виробник: Microchip Technology
Description: IGBT MOD 600V 100A 329W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V
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Мінімальне замовлення: 20 шт
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APT50GP60JDQ2 6329-apt50gp60jdq2-datasheet
APT50GP60JDQ2
Виробник: Microchip Technology
Description: IGBT MOD 600V 100A 329W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 525 µA
Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V
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Мінімальне замовлення: 20 шт
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APT50GT120JRDQ2 APT50GT120JRDQ2.pdf
APT50GT120JRDQ2
Виробник: Microchip Technology
Description: IGBT MOD 1200V 72A 379W ISOTOP
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Current - Collector Cutoff (Max): 400 µA
Power - Max: 379 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 72 A
IGBT Type: NPT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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APT50GT60BRDQ2G APT50GT60BRDQ2(G)_C.pdf
APT50GT60BRDQ2G
Виробник: Microchip Technology
Description: IGBT NPT 600V 110A TO247
Power - Max: 446 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 110 A
Gate Charge: 240 nC
Test Condition: 400V, 50A, 5Ohm, 15V
Switching Energy: 995µJ (on), 1070µJ (off)
Td (on/off) @ 25°C: 14ns/240ns
IGBT Type: NPT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Reverse Recovery Time (trr): 22 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT50GT60BRG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT50GT60BRG
Виробник: Microchip Technology
Description: IGBT NPT 600V 110A TO247
Power - Max: 446 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 110 A
Gate Charge: 240 nC
Test Condition: 400V, 50A, 4.3Ohm, 15V
Switching Energy: 995µJ (on), 1070µJ (off)
Td (on/off) @ 25°C: 14ns/240ns
IGBT Type: NPT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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APT50M38JLL 6334-apt50m38jll-datasheet
APT50M38JLL
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 88A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+5783.40 грн
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APT50M50JLL 6336-apt50m50jll-datasheet
APT50M50JLL
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 71A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 10550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 35.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+4401.24 грн
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APT50M65JFLL APT50M65JFLL_D.pdf
APT50M65JFLL
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 58A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7010 pF @ 25 V
на замовлення 432 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3116.39 грн
100+2435.69 грн
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APT50M65JLL 6348-apt50m65jll-datasheet
APT50M65JLL
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 58A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 7010 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3324.47 грн
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APT50M75B2LLG 6350-apt50m75b2llg-apt50m75lllg-datasheet
APT50M75B2LLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 57A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 570W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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APT50M75JFLL 6351-apt50m75jfll-datasheet
APT50M75JFLL
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 51A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT50M75LLLG 6350-apt50m75b2llg-apt50m75lllg-datasheet
APT50M75LLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 57A TO264
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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APT51M50J 7132-apt51m50j-datasheet
APT51M50J
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 51A ISOTOP
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APT53F80J APT53F80J_D.pdf
APT53F80J
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 57A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+4276.23 грн
100+3877.59 грн
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APT56M50L 7153-apt56m50b2-apt56m50l-datasheet
APT56M50L
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 56A TO264
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 217 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+771.38 грн
100+602.60 грн
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APT56M60L
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
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APT58M50J 7162-apt58m50j-datasheet
APT58M50J
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 58A ISOTOP
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APT58M80J APT58M80J_C.pdf
APT58M80J
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 60A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227
Vgs(th) (Max) @ Id: 5V @ 5mA
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+4071.32 грн
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APT6010B2LLG APT6010B2_LLL(G)_F.pdf
APT6010B2LLG
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 54A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 690W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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Мінімальне замовлення: 20 шт
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APT6010JFLL APT6010JFLL_E.pdf
APT6010JFLL
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 47A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Мінімальне замовлення: 20 шт
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APT6010JLL APT6010JLL_E.pdf
APT6010JLL
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 47A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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APT6010LLLG APT6010B2_LLL(G)_F.pdf
APT6010LLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 54A TO264
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
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Мінімальне замовлення: 25 шт
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