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Мінімальне замовлення: 4000
Мінімальне замовлення: 14
Мінімальне замовлення: 20
Мінімальне замовлення: 20
Мінімальне замовлення: 3
Мінімальне замовлення: 1000
Мінімальне замовлення: 1000
Мінімальне замовлення: 1000
Мінімальне замовлення: 3
Мінімальне замовлення: 4
Мінімальне замовлення: 1000
Мінімальне замовлення: 10
Мінімальне замовлення: 2
Мінімальне замовлення: 250
Мінімальне замовлення: 2
Мінімальне замовлення: 3000
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 228
Мінімальне замовлення: 75
Мінімальне замовлення: 45
Мінімальне замовлення: 3000
Мінімальне замовлення: 14
Мінімальне замовлення: 3000
Мінімальне замовлення: 14
Мінімальне замовлення: 40
Мінімальне замовлення: 25
Мінімальне замовлення: 14
Мінімальне замовлення: 3000
Мінімальне замовлення: 14
Мінімальне замовлення: 3000
Мінімальне замовлення: 40
Мінімальне замовлення: 25
Мінімальне замовлення: 3000
Мінімальне замовлення: 14
Мінімальне замовлення: 18
Мінімальне замовлення: 3000
Мінімальне замовлення: 14
Мінімальне замовлення: 75
Мінімальне замовлення: 45
Мінімальне замовлення: 13
Мінімальне замовлення: 75
Мінімальне замовлення: 45
Мінімальне замовлення: 11
Мінімальне замовлення: 75
Мінімальне замовлення: 45
Мінімальне замовлення: 14
Мінімальне замовлення: 3000
Мінімальне замовлення: 12
Мінімальне замовлення: 75
Мінімальне замовлення: 45
Мінімальне замовлення: 12
Мінімальне замовлення: 3000
Мінімальне замовлення: 10
Мінімальне замовлення: 3000
Мінімальне замовлення: 75
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BA3430FS Код товару: 77840 |
Rohm |
Мікросхеми > Аналогові Корпус: SSOP-A24 Функціональний опис: Stereo pre-amplifiers with mute detection circuits for car stereos Напруга живлення: 18 V Темп.діапазон: -30...+85°C |
у наявності: 8 шт
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BP0EA3430A7TR | KYOCERA AVX |
Description: RF FILT BAND PASS 3.43GHZ 30ULGA Packaging: Cut Tape (CT) Package / Case: 30-ULGA Filter Type: Band Pass Size / Dimension: 0.460" L x 0.170" W (11.68mm x 4.32mm) Mounting Type: Surface Mount Frequency: 3.43GHz Insertion Loss: 1dB Bandwidth: 1.82GHz Height (Max): 0.022" (0.56mm) |
на замовлення 197 шт: термін постачання 21-31 дні (днів) |
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CMFA3435103FNT | Cantherm |
Description: THERMISTOR NTC 10KOHM 3435K 0603 Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C B25/85: 3435K B Value Tolerance: ±1% Resistance in Ohms @ 25°C: 10k Resistance Tolerance: ±1% Part Status: Active Power - Max: 100 mW |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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CMFA3435103FNT | Cantherm |
Description: THERMISTOR NTC 10KOHM 3435K 0603 Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C B25/85: 3435K B Value Tolerance: ±1% Resistance in Ohms @ 25°C: 10k Resistance Tolerance: ±1% Part Status: Active Power - Max: 100 mW |
на замовлення 10244 шт: термін постачання 21-31 дні (днів) |
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GA343DR7GD472KW01L | MURATA |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 4.7nF; 250V; X7R; ±10%; SMD; 1812 Mounting: SMD Operating temperature: -55...125°C Operating voltage: 250V Capacitors series: GA3 Capacitance: 4.7nF Dielectric: X7R Type of capacitor: ceramic Tolerance: ±10% Kind of capacitor: MLCC Case - mm: 4532 Case - inch: 1812 |
на замовлення 4150 шт: термін постачання 21-30 дні (днів) |
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GA343DR7GD472KW01L | MURATA |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 4.7nF; 250V; X7R; ±10%; SMD; 1812 Mounting: SMD Operating temperature: -55...125°C Operating voltage: 250V Capacitors series: GA3 Capacitance: 4.7nF Dielectric: X7R Type of capacitor: ceramic Tolerance: ±10% Kind of capacitor: MLCC Case - mm: 4532 Case - inch: 1812 кількість в упаковці: 10 шт |
на замовлення 4150 шт: термін постачання 7-14 дні (днів) |
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GA343DR7GD472KW01L | Murata Electronics |
Description: CAP CER 4700PF 250VAC X7R 1812 Tolerance: ±10% Packaging: Cut Tape (CT) Voltage - Rated: 250VAC Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: Safety Ratings: Y3 Thickness (Max): 0.079" (2.00mm) Capacitance: 4700 pF |
на замовлення 126341 шт: термін постачання 21-31 дні (днів) |
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GA343DR7GD472KW01L | Murata Electronics |
Description: CAP CER 4700PF 250VAC X7R 1812 Tolerance: ±10% Packaging: Tape & Reel (TR) Voltage - Rated: 250VAC Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: Safety Ratings: Y3 Thickness (Max): 0.079" (2.00mm) Capacitance: 4700 pF |
на замовлення 124000 шт: термін постачання 21-31 дні (днів) |
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GA343DR7GD472KW01L | Murata Electronics | Cap Ceramic 0.0047uF 250VAC X7R 10% Pad SMD 1812 125C T/R |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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GA343QR7GD182KW01L | Murata Electronics |
Description: CAP CER 1800PF 250VAC X7R 1812 Tolerance: ±10% Packaging: Tape & Reel (TR) Voltage - Rated: 250VAC Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: Safety Ratings: Y3 Thickness (Max): 0.059" (1.50mm) Capacitance: 1800 pF |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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GA343QR7GD182KW01L | Murata Electronics |
Description: CAP CER 1800PF 250VAC X7R 1812 Tolerance: ±10% Packaging: Cut Tape (CT) Voltage - Rated: 250VAC Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: Safety Ratings: Y3 Thickness (Max): 0.059" (1.50mm) Capacitance: 1800 pF |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
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GA343QR7GD222KW01L | Murata Electronics |
Description: CAP CER 2200PF 250VAC X7R 1812 Tolerance: ±10% Packaging: Cut Tape (CT) Voltage - Rated: 250VAC Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: Safety Ratings: Y3 Thickness (Max): 0.059" (1.50mm) Part Status: Active Capacitance: 2200 pF |
на замовлення 64561 шт: термін постачання 21-31 дні (днів) |
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GA343QR7GD222KW01L | Murata Electronics |
Description: CAP CER 2200PF 250VAC X7R 1812 Tolerance: ±10% Packaging: Tape & Reel (TR) Voltage - Rated: 250VAC Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: Safety Ratings: Y3 Thickness (Max): 0.059" (1.50mm) Part Status: Active Capacitance: 2200 pF |
на замовлення 62000 шт: термін постачання 21-31 дні (днів) |
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OPA343NA | Texas Instruments |
CMOS R-R I/O Op-Amp, GBW 5.5MHz, SR 6V/us, Voff 2mV, 2.5?5.5V, -40?85°C OPA343NA WO343OPA na кількість в упаковці: 10 шт |
на замовлення 90 шт: термін постачання 28-31 дні (днів) |
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OPA343NA/250 | Texas Instruments |
Description: IC OPAMP GP 1 CIRCUIT SOT23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 850µA Slew Rate: 6V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 0.2 pA Voltage - Input Offset: 2 mV Supplier Device Package: SOT-23-5 Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 870 шт: термін постачання 21-31 дні (днів) |
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OPA343NA/250 | Texas Instruments |
Description: IC OPAMP GP 1 CIRCUIT SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 850µA Slew Rate: 6V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 0.2 pA Voltage - Input Offset: 2 mV Supplier Device Package: SOT-23-5 Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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OPA343NA/3K | Texas Instruments |
Description: IC OPAMP GP 1 CIRCUIT SOT23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 850µA Slew Rate: 6V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 0.2 pA Voltage - Input Offset: 2 mV Supplier Device Package: SOT-23-5 Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 5915 шт: термін постачання 21-31 дні (днів) |
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OPA343NA/3K | Texas Instruments |
Description: IC OPAMP GP 1 CIRCUIT SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 850µA Slew Rate: 6V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 0.2 pA Voltage - Input Offset: 2 mV Supplier Device Package: SOT-23-5 Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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OPA343UA | TEXAS INSTRUMENTS |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5.5MHz; Ch: 1; SO8 Mounting: SMT Operating temperature: -40...85°C Case: SO8 Slew rate: 6V/μs Voltage supply range: ± 1.25...2.75V DC; 2.5...5.5V DC Type of integrated circuit: operational amplifier Number of channels: 1 Bandwidth: 5.5MHz |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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OPA343UA | TEXAS INSTRUMENTS |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5.5MHz; Ch: 1; SO8 Mounting: SMT Operating temperature: -40...85°C Case: SO8 Slew rate: 6V/μs Voltage supply range: ± 1.25...2.75V DC; 2.5...5.5V DC Type of integrated circuit: operational amplifier Number of channels: 1 Bandwidth: 5.5MHz кількість в упаковці: 1 шт |
на замовлення 94 шт: термін постачання 7-14 дні (днів) |
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OPA343UA | Texas Instruments |
Description: IC OPAMP GP 1 CIRCUIT 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 850µA Slew Rate: 6V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 0.2 pA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 470 шт: термін постачання 21-31 дні (днів) |
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OPA343UA/2K5 | Texas Instruments |
Description: IC OPAMP GP 1 CIRCUIT 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 850µA Slew Rate: 6V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 0.2 pA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 1559 шт: термін постачання 21-31 дні (днів) |
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OPA343UA/2K5 | Texas Instruments |
Description: IC OPAMP GP 1 CIRCUIT 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 850µA Slew Rate: 6V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 0.2 pA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 26524 шт: термін постачання 21-31 дні (днів) |
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PJA3430_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Mounting: SMD Drain current: 2A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 8A On-state resistance: 0.4Ω Type of transistor: N-MOSFET |
на замовлення 2590 шт: термін постачання 21-30 дні (днів) |
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PJA3430_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Mounting: SMD Drain current: 2A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 8A On-state resistance: 0.4Ω Type of transistor: N-MOSFET кількість в упаковці: 5 шт |
на замовлення 2590 шт: термін постачання 7-14 дні (днів) |
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PJA3430_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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PJA3430_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V |
на замовлення 29205 шт: термін постачання 21-31 дні (днів) |
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PJA3431_R1_00001 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJA3431_R1_00001 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V |
на замовлення 3873 шт: термін постачання 21-31 дні (днів) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Mounting: SMD Application: automotive industry Drain current: 1.6A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 30V Kind of package: reel; tape Case: SOT23 Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 6.4A On-state resistance: 570mΩ Type of transistor: N-MOSFET |
на замовлення 2725 шт: термін постачання 21-30 дні (днів) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Mounting: SMD Application: automotive industry Drain current: 1.6A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 30V Kind of package: reel; tape Case: SOT23 Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 6.4A On-state resistance: 570mΩ Type of transistor: N-MOSFET кількість в упаковці: 5 шт |
на замовлення 2725 шт: термін постачання 7-14 дні (днів) |
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PJA3432-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 75722 шт: термін постачання 21-31 дні (днів) |
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PJA3432-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 75000 шт: термін постачання 21-31 дні (днів) |
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PJA3432_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V |
на замовлення 27013 шт: термін постачання 21-31 дні (днів) |
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PJA3432_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Application: automotive industry Drain current: -1.1A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: -30V Kind of package: reel; tape Case: SOT23 Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -4.4A On-state resistance: 0.97Ω Type of transistor: P-MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Application: automotive industry Drain current: -1.1A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: -30V Kind of package: reel; tape Case: SOT23 Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -4.4A On-state resistance: 0.97Ω Type of transistor: P-MOSFET кількість в упаковці: 5 шт |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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PJA3433-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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PJA3433-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 38503 шт: термін постачання 21-31 дні (днів) |
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PJA3433_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Drain current: -1.1A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: -30V Kind of package: reel; tape Case: SOT23 Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -4.4A On-state resistance: 0.97Ω Type of transistor: P-MOSFET |
на замовлення 5985 шт: термін постачання 21-30 дні (днів) |
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PJA3433_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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PJA3433_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V |
на замовлення 21929 шт: термін постачання 21-31 дні (днів) |
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PJA3434_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Mounting: SMD Drain current: 0.75A Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 1.5A On-state resistance: 3Ω Type of transistor: N-MOSFET |
на замовлення 2670 шт: термін постачання 21-30 дні (днів) |
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PJA3434_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Mounting: SMD Drain current: 0.75A Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 1.5A On-state resistance: 3Ω Type of transistor: N-MOSFET кількість в упаковці: 5 шт |
на замовлення 2670 шт: термін постачання 7-14 дні (днів) |
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PJA3434_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V |
на замовлення 3956 шт: термін постачання 21-31 дні (днів) |
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PJA3435_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Mounting: SMD Drain current: -500mA Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: -20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -1A On-state resistance: 6Ω Type of transistor: P-MOSFET |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
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PJA3435_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Mounting: SMD Drain current: -500mA Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: -20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -1A On-state resistance: 6Ω Type of transistor: P-MOSFET кількість в упаковці: 5 шт |
на замовлення 2980 шт: термін постачання 7-14 дні (днів) |
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PJA3435_R1_00001 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V |
на замовлення 2313 шт: термін постачання 21-31 дні (днів) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Mounting: SMD Application: automotive industry Drain current: 1.2A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 4.8A On-state resistance: 0.9Ω Type of transistor: N-MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Mounting: SMD Application: automotive industry Drain current: 1.2A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 4.8A On-state resistance: 0.9Ω Type of transistor: N-MOSFET кількість в упаковці: 5 шт |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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PJA3436-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 4449 шт: термін постачання 21-31 дні (днів) |
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PJA3436_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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PJA3436_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V |
на замовлення 28911 шт: термін постачання 21-31 дні (днів) |
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Mounting: SMD Application: automotive industry Drain current: 0.5A Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: 50V Kind of package: reel; tape Case: SOT23 Gate charge: 0.95nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.2A On-state resistance: 6Ω Type of transistor: N-MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Mounting: SMD Application: automotive industry Drain current: 0.5A Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: 50V Kind of package: reel; tape Case: SOT23 Gate charge: 0.95nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.2A On-state resistance: 6Ω Type of transistor: N-MOSFET кількість в упаковці: 5 шт |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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PJA3438-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4353 шт: термін постачання 21-31 дні (днів) |
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PJA3438-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJA3438_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V |
на замовлення 17248 шт: термін постачання 21-31 дні (днів) |
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PJA3438_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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PJA3439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Mounting: SMD Application: automotive industry Drain current: -0.3A Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: -60V Kind of package: reel; tape Case: SOT23 Gate charge: 1.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1A On-state resistance: 13Ω Type of transistor: P-MOSFET |
на замовлення 1910 шт: термін постачання 21-30 дні (днів) |
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BA3430FS Код товару: 77840 |
Виробник: Rohm
Мікросхеми > Аналогові
Корпус: SSOP-A24
Функціональний опис: Stereo pre-amplifiers with mute detection circuits for car stereos
Напруга живлення: 18 V
Темп.діапазон: -30...+85°C
Мікросхеми > Аналогові
Корпус: SSOP-A24
Функціональний опис: Stereo pre-amplifiers with mute detection circuits for car stereos
Напруга живлення: 18 V
Темп.діапазон: -30...+85°C
у наявності: 8 шт
Кількість | Ціна без ПДВ |
---|---|
1+ | 85 грн |
BP0EA3430A7TR |
Виробник: KYOCERA AVX
Description: RF FILT BAND PASS 3.43GHZ 30ULGA
Packaging: Cut Tape (CT)
Package / Case: 30-ULGA
Filter Type: Band Pass
Size / Dimension: 0.460" L x 0.170" W (11.68mm x 4.32mm)
Mounting Type: Surface Mount
Frequency: 3.43GHz
Insertion Loss: 1dB
Bandwidth: 1.82GHz
Height (Max): 0.022" (0.56mm)
Description: RF FILT BAND PASS 3.43GHZ 30ULGA
Packaging: Cut Tape (CT)
Package / Case: 30-ULGA
Filter Type: Band Pass
Size / Dimension: 0.460" L x 0.170" W (11.68mm x 4.32mm)
Mounting Type: Surface Mount
Frequency: 3.43GHz
Insertion Loss: 1dB
Bandwidth: 1.82GHz
Height (Max): 0.022" (0.56mm)
на замовлення 197 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1582.64 грн |
10+ | 1476.37 грн |
25+ | 1428.79 грн |
50+ | 1296.18 грн |
100+ | 1162.09 грн |
CMFA3435103FNT |
Виробник: Cantherm
Description: THERMISTOR NTC 10KOHM 3435K 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
B25/85: 3435K
B Value Tolerance: ±1%
Resistance in Ohms @ 25°C: 10k
Resistance Tolerance: ±1%
Part Status: Active
Power - Max: 100 mW
Description: THERMISTOR NTC 10KOHM 3435K 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
B25/85: 3435K
B Value Tolerance: ±1%
Resistance in Ohms @ 25°C: 10k
Resistance Tolerance: ±1%
Part Status: Active
Power - Max: 100 mW
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 8.31 грн |
CMFA3435103FNT |
Виробник: Cantherm
Description: THERMISTOR NTC 10KOHM 3435K 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
B25/85: 3435K
B Value Tolerance: ±1%
Resistance in Ohms @ 25°C: 10k
Resistance Tolerance: ±1%
Part Status: Active
Power - Max: 100 mW
Description: THERMISTOR NTC 10KOHM 3435K 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
B25/85: 3435K
B Value Tolerance: ±1%
Resistance in Ohms @ 25°C: 10k
Resistance Tolerance: ±1%
Part Status: Active
Power - Max: 100 mW
на замовлення 10244 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.61 грн |
16+ | 17.41 грн |
25+ | 15.29 грн |
50+ | 13.48 грн |
100+ | 11.5 грн |
500+ | 9.5 грн |
1000+ | 7.83 грн |
GA343DR7GD472KW01L |
Виробник: MURATA
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 4.7nF; 250V; X7R; ±10%; SMD; 1812
Mounting: SMD
Operating temperature: -55...125°C
Operating voltage: 250V
Capacitors series: GA3
Capacitance: 4.7nF
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
Kind of capacitor: MLCC
Case - mm: 4532
Case - inch: 1812
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 4.7nF; 250V; X7R; ±10%; SMD; 1812
Mounting: SMD
Operating temperature: -55...125°C
Operating voltage: 250V
Capacitors series: GA3
Capacitance: 4.7nF
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
Kind of capacitor: MLCC
Case - mm: 4532
Case - inch: 1812
на замовлення 4150 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 22.34 грн |
100+ | 13.87 грн |
110+ | 8.05 грн |
280+ | 7.56 грн |
GA343DR7GD472KW01L |
Виробник: MURATA
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 4.7nF; 250V; X7R; ±10%; SMD; 1812
Mounting: SMD
Operating temperature: -55...125°C
Operating voltage: 250V
Capacitors series: GA3
Capacitance: 4.7nF
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
Kind of capacitor: MLCC
Case - mm: 4532
Case - inch: 1812
кількість в упаковці: 10 шт
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 4.7nF; 250V; X7R; ±10%; SMD; 1812
Mounting: SMD
Operating temperature: -55...125°C
Operating voltage: 250V
Capacitors series: GA3
Capacitance: 4.7nF
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
Kind of capacitor: MLCC
Case - mm: 4532
Case - inch: 1812
кількість в упаковці: 10 шт
на замовлення 4150 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 26.8 грн |
100+ | 17.29 грн |
110+ | 9.66 грн |
280+ | 9.07 грн |
GA343DR7GD472KW01L |
Виробник: Murata Electronics
Description: CAP CER 4700PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Cut Tape (CT)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.079" (2.00mm)
Capacitance: 4700 pF
Description: CAP CER 4700PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Cut Tape (CT)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.079" (2.00mm)
Capacitance: 4700 pF
на замовлення 126341 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 108.05 грн |
10+ | 77.97 грн |
50+ | 71.12 грн |
100+ | 54.68 грн |
500+ | 43.64 грн |
GA343DR7GD472KW01L |
Виробник: Murata Electronics
Description: CAP CER 4700PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.079" (2.00mm)
Capacitance: 4700 pF
Description: CAP CER 4700PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.079" (2.00mm)
Capacitance: 4700 pF
на замовлення 124000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 42.61 грн |
2000+ | 38.3 грн |
5000+ | 36.93 грн |
10000+ | 33.37 грн |
GA343DR7GD472KW01L |
Виробник: Murata Electronics
Cap Ceramic 0.0047uF 250VAC X7R 10% Pad SMD 1812 125C T/R
Cap Ceramic 0.0047uF 250VAC X7R 10% Pad SMD 1812 125C T/R
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 8.31 грн |
GA343QR7GD182KW01L |
Виробник: Murata Electronics
Description: CAP CER 1800PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Capacitance: 1800 pF
Description: CAP CER 1800PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Capacitance: 1800 pF
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 42.61 грн |
GA343QR7GD182KW01L |
Виробник: Murata Electronics
Description: CAP CER 1800PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Cut Tape (CT)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Capacitance: 1800 pF
Description: CAP CER 1800PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Cut Tape (CT)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Capacitance: 1800 pF
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 108.05 грн |
10+ | 77.97 грн |
50+ | 71.12 грн |
100+ | 54.68 грн |
500+ | 43.64 грн |
GA343QR7GD222KW01L |
Виробник: Murata Electronics
Description: CAP CER 2200PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Cut Tape (CT)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Part Status: Active
Capacitance: 2200 pF
Description: CAP CER 2200PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Cut Tape (CT)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Part Status: Active
Capacitance: 2200 pF
на замовлення 64561 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 74.2 грн |
10+ | 53.76 грн |
50+ | 49.03 грн |
100+ | 37.69 грн |
500+ | 31.15 грн |
GA343QR7GD222KW01L |
Виробник: Murata Electronics
Description: CAP CER 2200PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Part Status: Active
Capacitance: 2200 pF
Description: CAP CER 2200PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Part Status: Active
Capacitance: 2200 pF
на замовлення 62000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 34.47 грн |
OPA343NA |
Виробник: Texas Instruments
CMOS R-R I/O Op-Amp, GBW 5.5MHz, SR 6V/us, Voff 2mV, 2.5?5.5V, -40?85°C OPA343NA WO343OPA na
кількість в упаковці: 10 шт
CMOS R-R I/O Op-Amp, GBW 5.5MHz, SR 6V/us, Voff 2mV, 2.5?5.5V, -40?85°C OPA343NA WO343OPA na
кількість в упаковці: 10 шт
на замовлення 90 шт:
термін постачання 28-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 159.04 грн |
OPA343NA/250 |
Виробник: Texas Instruments
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 870 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 188.01 грн |
10+ | 162.6 грн |
25+ | 153.69 грн |
100+ | 125.02 грн |
OPA343NA/250 |
Виробник: Texas Instruments
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
250+ | 131.25 грн |
500+ | 113.41 грн |
OPA343NA/3K |
Виробник: Texas Instruments
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 5915 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 181.53 грн |
10+ | 156.84 грн |
25+ | 148 грн |
100+ | 118.32 грн |
250+ | 111.11 грн |
500+ | 97.22 грн |
1000+ | 79.23 грн |
OPA343NA/3K |
Виробник: Texas Instruments
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 82.99 грн |
OPA343UA |
Виробник: TEXAS INSTRUMENTS
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 1; SO8
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Slew rate: 6V/μs
Voltage supply range: ± 1.25...2.75V DC; 2.5...5.5V DC
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 5.5MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 1; SO8
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Slew rate: 6V/μs
Voltage supply range: ± 1.25...2.75V DC; 2.5...5.5V DC
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 5.5MHz
на замовлення 94 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 197.97 грн |
5+ | 162.32 грн |
6+ | 141.51 грн |
16+ | 133.19 грн |
75+ | 127.64 грн |
OPA343UA |
Виробник: TEXAS INSTRUMENTS
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 1; SO8
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Slew rate: 6V/μs
Voltage supply range: ± 1.25...2.75V DC; 2.5...5.5V DC
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 5.5MHz
кількість в упаковці: 1 шт
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 1; SO8
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Slew rate: 6V/μs
Voltage supply range: ± 1.25...2.75V DC; 2.5...5.5V DC
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 5.5MHz
кількість в упаковці: 1 шт
на замовлення 94 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 237.56 грн |
5+ | 202.28 грн |
6+ | 169.81 грн |
16+ | 159.82 грн |
75+ | 153.17 грн |
OPA343UA |
Виробник: Texas Instruments
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 470 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 188.01 грн |
10+ | 162.6 грн |
75+ | 153.71 грн |
150+ | 125.02 грн |
300+ | 118.61 грн |
OPA343UA/2K5 |
Виробник: Texas Instruments
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 1559 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 181.53 грн |
10+ | 156.84 грн |
25+ | 148 грн |
100+ | 118.32 грн |
250+ | 111.11 грн |
500+ | 97.22 грн |
1000+ | 79.23 грн |
OPA343UA/2K5 |
Виробник: Texas Instruments
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 26524 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
228+ | 87.81 грн |
PJA3430_R1_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
на замовлення 2590 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.23 грн |
85+ | 4.19 грн |
235+ | 3.45 грн |
640+ | 3.26 грн |
PJA3430_R1_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
на замовлення 2590 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.28 грн |
50+ | 5.22 грн |
235+ | 4.14 грн |
640+ | 3.91 грн |
3000+ | 3.76 грн |
PJA3430_R1_00001 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.74 грн |
6000+ | 3.34 грн |
9000+ | 2.77 грн |
PJA3430_R1_00001 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
на замовлення 29205 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.61 грн |
19+ | 14.64 грн |
100+ | 7.17 грн |
500+ | 5.61 грн |
1000+ | 3.9 грн |
PJA3431_R1_00001 |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.74 грн |
PJA3431_R1_00001 |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
на замовлення 3873 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.61 грн |
19+ | 14.64 грн |
100+ | 7.17 грн |
500+ | 5.61 грн |
1000+ | 3.9 грн |
PJA3432-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
на замовлення 2725 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.46 грн |
65+ | 5.38 грн |
100+ | 4.83 грн |
205+ | 3.97 грн |
560+ | 3.76 грн |
PJA3432-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
на замовлення 2725 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.55 грн |
40+ | 6.71 грн |
100+ | 5.79 грн |
205+ | 4.77 грн |
560+ | 4.51 грн |
9000+ | 4.34 грн |
PJA3432-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Qualification: AEC-Q101
на замовлення 75722 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.61 грн |
20+ | 14.01 грн |
100+ | 6.83 грн |
500+ | 5.35 грн |
1000+ | 3.72 грн |
PJA3432-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Qualification: AEC-Q101
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.56 грн |
6000+ | 3.18 грн |
9000+ | 2.64 грн |
30000+ | 2.43 грн |
75000+ | 2.19 грн |
PJA3432_R1_00001 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
на замовлення 27013 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.61 грн |
19+ | 14.64 грн |
100+ | 7.17 грн |
500+ | 5.61 грн |
1000+ | 3.9 грн |
PJA3432_R1_00001 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.63 грн |
6000+ | 2.35 грн |
9000+ | 2.02 грн |
PJA3433-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.31 грн |
60+ | 5.97 грн |
100+ | 5.34 грн |
185+ | 4.37 грн |
505+ | 4.16 грн |
PJA3433-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.37 грн |
35+ | 7.43 грн |
100+ | 6.41 грн |
185+ | 5.24 грн |
505+ | 4.99 грн |
9000+ | 4.74 грн |
PJA3433-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.56 грн |
6000+ | 3.18 грн |
9000+ | 2.64 грн |
30000+ | 2.43 грн |
PJA3433-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 38503 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.61 грн |
20+ | 14.01 грн |
100+ | 6.83 грн |
500+ | 5.35 грн |
1000+ | 3.72 грн |
PJA3433_R1_00001 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
на замовлення 5985 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 20.92 грн |
27+ | 13.18 грн |
31+ | 11.46 грн |
100+ | 5.6 грн |
213+ | 3.78 грн |
585+ | 3.57 грн |
3000+ | 3.43 грн |
PJA3433_R1_00001 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.74 грн |
6000+ | 3.34 грн |
9000+ | 2.77 грн |
PJA3433_R1_00001 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
на замовлення 21929 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.61 грн |
19+ | 14.64 грн |
100+ | 7.17 грн |
500+ | 5.61 грн |
1000+ | 3.9 грн |
PJA3434_R1_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Drain current: 0.75A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Drain current: 0.75A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
на замовлення 2670 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.23 грн |
95+ | 3.82 грн |
250+ | 3.39 грн |
255+ | 3.15 грн |
705+ | 2.98 грн |
PJA3434_R1_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Drain current: 0.75A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Drain current: 0.75A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
на замовлення 2670 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.28 грн |
55+ | 4.75 грн |
250+ | 4.06 грн |
255+ | 3.78 грн |
705+ | 3.57 грн |
3000+ | 3.43 грн |
PJA3434_R1_00001 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
на замовлення 3956 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.77 грн |
18+ | 15.75 грн |
100+ | 7.69 грн |
500+ | 6.02 грн |
1000+ | 4.18 грн |
PJA3435_R1_00001 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Drain current: -500mA
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
On-state resistance: 6Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Drain current: -500mA
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
On-state resistance: 6Ω
Type of transistor: P-MOSFET
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.23 грн |
85+ | 4.2 грн |
235+ | 3.46 грн |
640+ | 3.27 грн |
PJA3435_R1_00001 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Drain current: -500mA
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
On-state resistance: 6Ω
Type of transistor: P-MOSFET
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Drain current: -500mA
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
On-state resistance: 6Ω
Type of transistor: P-MOSFET
кількість в упаковці: 5 шт
на замовлення 2980 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.28 грн |
50+ | 5.24 грн |
235+ | 4.15 грн |
640+ | 3.93 грн |
3000+ | 3.78 грн |
PJA3435_R1_00001 |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
на замовлення 2313 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.37 грн |
16+ | 18.38 грн |
100+ | 9.3 грн |
500+ | 7.12 грн |
1000+ | 5.28 грн |
PJA3436-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.23 грн |
95+ | 3.82 грн |
250+ | 3.39 грн |
255+ | 3.15 грн |
705+ | 2.98 грн |
3000+ | 2.86 грн |
PJA3436-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.28 грн |
55+ | 4.75 грн |
250+ | 4.06 грн |
255+ | 3.78 грн |
705+ | 3.57 грн |
3000+ | 3.43 грн |
PJA3436-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
Qualification: AEC-Q101
на замовлення 4449 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.61 грн |
20+ | 14.01 грн |
100+ | 6.83 грн |
500+ | 5.35 грн |
1000+ | 3.72 грн |
PJA3436_R1_00001 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.45 грн |
6000+ | 4.09 грн |
9000+ | 3.54 грн |
PJA3436_R1_00001 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
на замовлення 28911 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.49 грн |
17+ | 16.65 грн |
100+ | 8.41 грн |
500+ | 6.44 грн |
1000+ | 4.78 грн |
PJA3438-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 0.5A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 0.5A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.23 грн |
85+ | 4.16 грн |
235+ | 3.43 грн |
645+ | 3.25 грн |
3000+ | 3.12 грн |
PJA3438-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 0.5A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 0.5A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.28 грн |
50+ | 5.19 грн |
235+ | 4.11 грн |
645+ | 3.9 грн |
3000+ | 3.75 грн |
PJA3438-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4353 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.49 грн |
17+ | 16.72 грн |
100+ | 8.44 грн |
500+ | 7.02 грн |
1000+ | 5.46 грн |
PJA3438-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.41 грн |
PJA3438_R1_00001 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
на замовлення 17248 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.26 грн |
14+ | 20.19 грн |
100+ | 10.18 грн |
500+ | 7.79 грн |
1000+ | 5.78 грн |
PJA3438_R1_00001 |
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.38 грн |
6000+ | 4.95 грн |
9000+ | 4.29 грн |
PJA3439-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Drain current: -0.3A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -60V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Drain current: -0.3A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -60V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
On-state resistance: 13Ω
Type of transistor: P-MOSFET
на замовлення 1910 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 5.23 грн |
85+ | 4.16 грн |
235+ | 3.43 грн |
645+ | 3.25 грн |
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