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74HC4017BQ-Q100X 74HC4017BQ-Q100X Nexperia USA Inc. 74HC_HCT4017_Q100.pdf Description: IC DECADE COUNTER 10BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Counter, Decade
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Positive, Negative
Timing: Synchronous
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Count Rate: 83 MHz
Number of Bits per Element: 10
Grade: Automotive
Qualification: AEC-Q100
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74HCT2G86DC-Q100H 74HCT2G86DC-Q100H Nexperia USA Inc. 74HC_HCT2G86_Q100.pdf Description: IC GATE XOR 2CH 2-INP 8VSSOP
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BUK7K12-60EX BUK7K12-60EX Nexperia USA Inc. BUK7K12-60E.pdf Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2348pF @ 25V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+52.82 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BUK7K13-60EX BUK7K13-60EX Nexperia USA Inc. BUK7K13-60E.pdf Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2163pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BUK7K17-60EX BUK7K17-60EX Nexperia USA Inc. BUK7K17-60E.pdf Description: MOSFET 2N-CH 60V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1578pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
1500+45.24 грн
3000+40.42 грн
4500+38.82 грн
7500+35.96 грн
Мінімальне замовлення: 1500
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BUK7K18-40EX BUK7K18-40EX Nexperia USA Inc. BUK7K18-40E.pdf Description: MOSFET 2N-CH 40V 24.2A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+35.47 грн
Мінімальне замовлення: 1500
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BUK7K32-100EX BUK7K32-100EX Nexperia USA Inc. BUK7K32-100E.pdf Description: MOSFET 2N-CH 100V 29A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 29A
Input Capacitance (Ciss) (Max) @ Vds: 2137pF @ 25V
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+63.19 грн
Мінімальне замовлення: 1500
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BUK7K35-60EX BUK7K35-60EX Nexperia USA Inc. BUK7K35-60E.pdf Description: MOSFET 2N-CH 60V 20.7A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20.7A
Input Capacitance (Ciss) (Max) @ Vds: 794pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
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BUK7K45-100EX BUK7K45-100EX Nexperia USA Inc. BUK7K45-100E.pdf Description: MOSFET 2N-CH 100V 21.4A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21.4A
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V
Rds On (Max) @ Id, Vgs: 37.6mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BUK7K52-60EX BUK7K52-60EX Nexperia USA Inc. BUK7K52-60E.pdf Description: MOSFET 2N-CH 60V 15.4A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15.4A
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
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BUK7K89-100EX BUK7K89-100EX Nexperia USA Inc. BUK7K89-100E.pdf Description: MOSFET 2N-CH 100V 13A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A
Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V
Rds On (Max) @ Id, Vgs: 82.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+38.04 грн
Мінімальне замовлення: 1500
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BUK9K12-60EX BUK9K12-60EX Nexperia USA Inc. BUK9K12-60E.pdf Description: MOSFET 2N-CH 60V 35A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 35A
Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
1500+49.63 грн
3000+44.43 грн
4500+42.87 грн
Мінімальне замовлення: 1500
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BUK9K134-100EX BUK9K134-100EX Nexperia USA Inc. BUK9K134-100E.pdf Description: MOSFET 2N-CH 100V 8.5A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Rds On (Max) @ Id, Vgs: 159mOhm @ 5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+33.25 грн
3000+29.54 грн
Мінімальне замовлення: 1500
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BUK9K13-60EX BUK9K13-60EX Nexperia USA Inc. BUK9K13-60E.pdf Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
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BUK9K25-40EX BUK9K25-40EX Nexperia USA Inc. BUK9K25-40E.pdf Description: MOSFET 2N-CH 40V 18.2A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18.2A
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1500+28.47 грн
3000+26.85 грн
4500+26.39 грн
Мінімальне замовлення: 1500
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BUK9K32-100EX BUK9K32-100EX Nexperia USA Inc. BUK9K32-100E.pdf Description: MOSFET 2N-CH 100V 26A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BUK9K6R8-40EX BUK9K6R8-40EX Nexperia USA Inc. BUK9K6R8-40E.pdf Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
1500+60.71 грн
Мінімальне замовлення: 1500
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BUK9K8R7-40EX BUK9K8R7-40EX Nexperia USA Inc. BUK9K8R7-40E.pdf Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1500+30.68 грн
3000+27.23 грн
4500+26.06 грн
Мінімальне замовлення: 1500
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74LVC16244AEVE 74LVC16244AEVE Nexperia USA Inc. 74LVC_LVCH16244A.pdf Description: IC BUF NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
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74LVC16244AEVK 74LVC16244AEVK Nexperia USA Inc. 74LVC_LVCH16244A.pdf Description: IC BUF NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
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74LVCH16245AEV,551 74LVCH16245AEV,551 Nexperia USA Inc. 74LVC_LVCH16245A.pdf Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
Part Status: Obsolete
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74LVCH16245AEVK 74LVCH16245AEVK Nexperia USA Inc. 74LVC(H)16245A_Rev12.pdf Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
Part Status: Obsolete
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74LVT16245BEVE 74LVT16245BEVE Nexperia USA Inc. 74LVT_LVTH16245B.pdf Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-VFBGA (4.5x7)
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74LVT16245BEVK 74LVT16245BEVK Nexperia USA Inc. 74LVT_LVTH16245B.pdf Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-VFBGA (4.5x7)
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PESD18VF1BLYL PESD18VF1BLYL Nexperia USA Inc. PESD18VF1BL.pdf Description: TVS DIODE 18VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Part Status: Active
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PESD18VF1BLYL PESD18VF1BLYL Nexperia USA Inc. PESD18VF1BL.pdf Description: TVS DIODE 18VWM 17VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Part Status: Active
на замовлення 1861 шт:
термін постачання 21-31 дні (днів)
12+29.36 грн
19+17.71 грн
50+12.69 грн
100+10.38 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BUK7K17-60EX BUK7K17-60EX Nexperia USA Inc. BUK7K17-60E.pdf Description: MOSFET 2N-CH 60V 30A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1578pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 106171 шт:
термін постачання 21-31 дні (днів)
3+150.27 грн
10+92.81 грн
100+62.70 грн
500+46.75 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK7Y4R8-60EX BUK7Y4R8-60EX Nexperia USA Inc. BUK7Y4R8-60E.pdf Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 73.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5520 pF @ 25 V
Qualification: AEC-Q101
на замовлення 439 шт:
термін постачання 21-31 дні (днів)
2+220.22 грн
10+136.22 грн
50+103.44 грн
100+87.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK7Y7R8-80EX BUK7Y7R8-80EX Nexperia USA Inc. BUK7Y7R8-80E.pdf Description: MOSFET N-CH 80V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5347 pF @ 25 V
Qualification: AEC-Q101
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
2+199.49 грн
10+123.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK7Y9R9-80EX BUK7Y9R9-80EX Nexperia USA Inc. BUK7Y9R9-80E.pdf Description: MOSFET N-CH 80V 89A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 25A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 51.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4266 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2551 шт:
термін постачання 21-31 дні (днів)
2+191.72 грн
10+118.34 грн
50+89.63 грн
100+75.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK9K32-100EX BUK9K32-100EX Nexperia USA Inc. BUK9K32-100E.pdf Description: MOSFET 2N-CH 100V 26A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 939 шт:
термін постачання 21-31 дні (днів)
2+218.49 грн
10+134.89 грн
50+102.39 грн
100+86.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK9K8R7-40EX BUK9K8R7-40EX Nexperia USA Inc. BUK9K8R7-40E.pdf Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 6705 шт:
термін постачання 21-31 дні (днів)
4+107.95 грн
10+65.53 грн
100+43.55 грн
500+32.02 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUK9Y153-100E,115 BUK9Y153-100E,115 Nexperia USA Inc. BUK9Y153-100E.pdf Description: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 2A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8675 шт:
термін постачання 21-31 дні (днів)
6+60.45 грн
10+36.26 грн
100+23.46 грн
500+16.83 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BUK9Y15-60E,115 BUK9Y15-60E,115 Nexperia USA Inc. BUK9Y15-60E.pdf Description: MOSFET N-CH 60V 53A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2603 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9Y22-100E,115 BUK9Y22-100E,115 Nexperia USA Inc. BUK9Y22-100E.pdf Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4520 шт:
термін постачання 21-31 дні (днів)
3+153.72 грн
10+94.22 грн
100+63.43 грн
500+47.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK9Y25-60E,115 BUK9Y25-60E,115 Nexperia USA Inc. BUK9Y25-60E.pdf Description: MOSFET N-CH 60V 34A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 46500 шт:
термін постачання 21-31 дні (днів)
5+84.63 грн
10+59.71 грн
100+43.82 грн
500+32.18 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BUK9Y29-40E,115 BUK9Y29-40E,115 Nexperia USA Inc. BUK9Y29-40E.pdf Description: MOSFET N-CH 40V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9Y38-100E,115 BUK9Y38-100E,115 Nexperia USA Inc. BUK9Y38-100E.pdf Description: MOSFET N-CH 100V 30A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 5V
Power Dissipation (Max): 94.9W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2541 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1446 шт:
термін постачання 21-31 дні (днів)
4+108.81 грн
10+65.70 грн
50+48.70 грн
100+40.54 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUK9Y3R0-40E,115 BUK9Y3R0-40E,115 Nexperia USA Inc. BUK9Y3R0-40E.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5962 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3203 шт:
термін постачання 21-31 дні (днів)
3+122.63 грн
10+98.55 грн
100+71.74 грн
500+57.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK9Y43-60E,115 BUK9Y43-60E,115 Nexperia USA Inc. BUK9Y43-60E.pdf Description: MOSFET N-CH 60V 22A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6699 шт:
термін постачання 21-31 дні (днів)
6+63.04 грн
10+38.09 грн
100+24.67 грн
500+17.72 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BUK9Y4R4-40E,115 BUK9Y4R4-40E,115 Nexperia USA Inc. BUK9Y4R4-40E.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4077 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9Y4R8-60E,115 BUK9Y4R8-60E,115 Nexperia USA Inc. BUK9Y4R8-60E.pdf Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7853 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Qualification: AEC-Q101
на замовлення 10609 шт:
термін постачання 21-31 дні (днів)
2+240.08 грн
10+149.52 грн
50+114.30 грн
100+96.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK9Y6R0-60E,115 BUK9Y6R0-60E,115 Nexperia USA Inc. BUK9Y6R0-60E.pdf Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6319 pF @ 25 V
Qualification: AEC-Q101
на замовлення 528 шт:
термін постачання 21-31 дні (днів)
2+177.04 грн
10+108.69 грн
50+82.11 грн
100+69.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN011-60MLX PSMN011-60MLX Nexperia USA Inc. PSMN011-60ML.pdf Description: MOSFET N-CH 60V 61A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2191 pF @ 30 V
на замовлення 911 шт:
термін постачання 21-31 дні (днів)
4+114.00 грн
10+68.77 грн
50+51.04 грн
100+42.53 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PSMN041-80YLX PSMN041-80YLX Nexperia USA Inc. PSMN041-80YL.pdf Description: MOSFET N-CH 80V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 25 V
на замовлення 1492 шт:
термін постачання 21-31 дні (днів)
4+101.04 грн
10+60.96 грн
50+45.09 грн
100+37.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PMT21EN,115 PMT21EN,115 Nexperia USA Inc. PMT21EN.pdf Description: MOSFET N-CH 30V 7.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
1PS70SB10,115 1PS70SB10,115 Nexperia USA Inc. 1PS70SB10.pdf Description: DIODE SCHOTTKY 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
16+21.59 грн
27+12.72 грн
50+9.06 грн
100+7.40 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
1PS79SB31,115 1PS79SB31,115 Nexperia USA Inc. 1PS79SB31.pdf Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 3030 шт:
термін постачання 21-31 дні (днів)
15+23.32 грн
24+14.05 грн
50+10.05 грн
100+8.21 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
2PB709ART,215 2PB709ART,215 Nexperia USA Inc. 2PB709ART.pdf Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4940 шт:
термін постачання 21-31 дні (днів)
24+14.68 грн
39+8.73 грн
54+6.17 грн
100+5.02 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
2PD601ART,215 2PD601ART,215 Nexperia USA Inc. 2PD601ART.pdf Description: TRANS NPN 50V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1661 шт:
термін постачання 21-31 дні (днів)
29+12.09 грн
48+6.99 грн
100+4.31 грн
500+2.93 грн
1000+2.57 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
2PD601BRL,215 2PD601BRL,215 Nexperia USA Inc. 2PD601BRL_2PD601BSL.pdf Description: TRANS NPN 50V 0.2A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1701 шт:
термін постачання 21-31 дні (днів)
20+18.14 грн
31+10.81 грн
50+7.72 грн
100+6.27 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
74HCT1G86GW,125 74HCT1G86GW,125 Nexperia USA Inc. 74HC_HCT1G86.pdf Description: IC GATE XOR 1CH 2-INP 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 2mA
Number of Inputs: 2
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 13ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 20 µA
товару немає в наявності
В кошику  од. на суму  грн.
74HCT574PW,118 74HCT574PW,118 Nexperia USA Inc. 74HC_HCT574.pdf Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 6mA, 6mA
Trigger Type: Positive Edge
Clock Frequency: 76 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 33ns @ 4.5V, 50pF
Part Status: Active
Number of Bits per Element: 8
на замовлення 26404 шт:
термін постачання 21-31 дні (днів)
10+38.00 грн
13+25.70 грн
25+22.95 грн
100+18.68 грн
250+17.31 грн
500+16.49 грн
1000+15.56 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BAS21AW,115 BAS21AW,115 Nexperia USA Inc. BAS21AW.pdf Description: DIODE ARRAY GP 250V 225MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 3668 шт:
термін постачання 21-31 дні (днів)
20+18.14 грн
32+10.73 грн
100+6.67 грн
500+4.59 грн
1000+4.05 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BAS40-05V,115 BAS40-05V,115 Nexperia USA Inc. BAS40-05V.pdf Description: DIODE ARR SCHOT 40V 120MA SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT-666
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
BAS45A,113 BAS45A,113 Nexperia USA Inc. BAS45A.pdf Description: DIODE STANDARD 125V 250MA DO34
Packaging: Cut Tape (CT)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-34
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
на замовлення 13476 шт:
термін постачання 21-31 дні (днів)
12+31.09 грн
18+18.55 грн
100+11.67 грн
500+8.16 грн
1000+7.27 грн
2000+6.51 грн
5000+5.59 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BAS70-07S,115 BAS70-07S,115 Nexperia USA Inc. BAS70-07S.pdf Description: DIODE ARR SCHOTT 70V 70MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
на замовлення 1189 шт:
термін постачання 21-31 дні (днів)
19+19.00 грн
29+11.48 грн
100+7.14 грн
500+4.92 грн
1000+4.34 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
BAT74S,115 BAT74S,115 Nexperia USA Inc. BAT74S.pdf Description: DIODE ARR SCHOT 30V 200MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 16602 шт:
термін постачання 21-31 дні (днів)
17+20.73 грн
26+12.97 грн
100+10.80 грн
500+7.54 грн
1000+6.70 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BAW156,215 BAW156,215 Nexperia USA Inc. BAW156.pdf Description: DIODE ARRAY GP 75V 160MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 160mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3622 шт:
термін постачання 21-31 дні (днів)
27+12.95 грн
45+7.48 грн
100+4.63 грн
500+3.16 грн
1000+2.77 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BC846DS,115 BC846DS,115 Nexperia USA Inc. BC846DS.pdf Description: TRANS 2NPN 65V 100MA 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2752 шт:
термін постачання 21-31 дні (днів)
15+24.18 грн
24+14.22 грн
100+8.91 грн
500+6.18 грн
1000+5.48 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
74HC4017BQ-Q100X 74HC_HCT4017_Q100.pdf
74HC4017BQ-Q100X
Виробник: Nexperia USA Inc.
Description: IC DECADE COUNTER 10BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Counter, Decade
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Positive, Negative
Timing: Synchronous
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Count Rate: 83 MHz
Number of Bits per Element: 10
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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74HCT2G86DC-Q100H 74HC_HCT2G86_Q100.pdf
74HCT2G86DC-Q100H
Виробник: Nexperia USA Inc.
Description: IC GATE XOR 2CH 2-INP 8VSSOP
товару немає в наявності
В кошику  од. на суму  грн.
BUK7K12-60EX BUK7K12-60E.pdf
BUK7K12-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2348pF @ 25V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+52.82 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BUK7K13-60EX BUK7K13-60E.pdf
BUK7K13-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2163pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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BUK7K17-60EX BUK7K17-60E.pdf
BUK7K17-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1578pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+45.24 грн
3000+40.42 грн
4500+38.82 грн
7500+35.96 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BUK7K18-40EX BUK7K18-40E.pdf
BUK7K18-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 24.2A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+35.47 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BUK7K32-100EX BUK7K32-100E.pdf
BUK7K32-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 29A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 29A
Input Capacitance (Ciss) (Max) @ Vds: 2137pF @ 25V
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+63.19 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BUK7K35-60EX BUK7K35-60E.pdf
BUK7K35-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 20.7A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20.7A
Input Capacitance (Ciss) (Max) @ Vds: 794pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
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BUK7K45-100EX BUK7K45-100E.pdf
BUK7K45-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 21.4A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21.4A
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V
Rds On (Max) @ Id, Vgs: 37.6mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BUK7K52-60EX BUK7K52-60E.pdf
BUK7K52-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 15.4A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15.4A
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
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BUK7K89-100EX BUK7K89-100E.pdf
BUK7K89-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 13A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A
Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V
Rds On (Max) @ Id, Vgs: 82.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+38.04 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BUK9K12-60EX BUK9K12-60E.pdf
BUK9K12-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 35A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 35A
Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+49.63 грн
3000+44.43 грн
4500+42.87 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BUK9K134-100EX BUK9K134-100E.pdf
BUK9K134-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 8.5A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Rds On (Max) @ Id, Vgs: 159mOhm @ 5A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+33.25 грн
3000+29.54 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BUK9K13-60EX BUK9K13-60E.pdf
BUK9K13-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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BUK9K25-40EX BUK9K25-40E.pdf
BUK9K25-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 18.2A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18.2A
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+28.47 грн
3000+26.85 грн
4500+26.39 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BUK9K32-100EX BUK9K32-100E.pdf
BUK9K32-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 26A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BUK9K6R8-40EX BUK9K6R8-40E.pdf
BUK9K6R8-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+60.71 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
BUK9K8R7-40EX BUK9K8R7-40E.pdf
BUK9K8R7-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+30.68 грн
3000+27.23 грн
4500+26.06 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
74LVC16244AEVE 74LVC_LVCH16244A.pdf
74LVC16244AEVE
Виробник: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
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74LVC16244AEVK 74LVC_LVCH16244A.pdf
74LVC16244AEVK
Виробник: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
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74LVCH16245AEV,551 74LVC_LVCH16245A.pdf
74LVCH16245AEV,551
Виробник: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
Part Status: Obsolete
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74LVCH16245AEVK 74LVC(H)16245A_Rev12.pdf
74LVCH16245AEVK
Виробник: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-VFBGA (4.5x7)
Part Status: Obsolete
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74LVT16245BEVE 74LVT_LVTH16245B.pdf
74LVT16245BEVE
Виробник: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-VFBGA (4.5x7)
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74LVT16245BEVK 74LVT_LVTH16245B.pdf
74LVT16245BEVK
Виробник: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 3.6V 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-VFBGA (4.5x7)
товару немає в наявності
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PESD18VF1BLYL PESD18VF1BL.pdf
PESD18VF1BLYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 18VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Part Status: Active
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PESD18VF1BLYL PESD18VF1BL.pdf
PESD18VF1BLYL
Виробник: Nexperia USA Inc.
Description: TVS DIODE 18VWM 17VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Part Status: Active
на замовлення 1861 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.36 грн
19+17.71 грн
50+12.69 грн
100+10.38 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BUK7K17-60EX BUK7K17-60E.pdf
BUK7K17-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 30A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1578pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 106171 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+150.27 грн
10+92.81 грн
100+62.70 грн
500+46.75 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK7Y4R8-60EX BUK7Y4R8-60E.pdf
BUK7Y4R8-60EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 73.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5520 pF @ 25 V
Qualification: AEC-Q101
на замовлення 439 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+220.22 грн
10+136.22 грн
50+103.44 грн
100+87.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK7Y7R8-80EX BUK7Y7R8-80E.pdf
BUK7Y7R8-80EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5347 pF @ 25 V
Qualification: AEC-Q101
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+199.49 грн
10+123.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK7Y9R9-80EX BUK7Y9R9-80E.pdf
BUK7Y9R9-80EX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 89A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 25A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 51.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4266 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2551 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+191.72 грн
10+118.34 грн
50+89.63 грн
100+75.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK9K32-100EX BUK9K32-100E.pdf
BUK9K32-100EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 26A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 939 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+218.49 грн
10+134.89 грн
50+102.39 грн
100+86.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK9K8R7-40EX BUK9K8R7-40E.pdf
BUK9K8R7-40EX
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 6705 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+107.95 грн
10+65.53 грн
100+43.55 грн
500+32.02 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUK9Y153-100E,115 BUK9Y153-100E.pdf
BUK9Y153-100E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 2A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8675 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.45 грн
10+36.26 грн
100+23.46 грн
500+16.83 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BUK9Y15-60E,115 BUK9Y15-60E.pdf
BUK9Y15-60E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 53A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2603 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9Y22-100E,115 BUK9Y22-100E.pdf
BUK9Y22-100E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4520 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+153.72 грн
10+94.22 грн
100+63.43 грн
500+47.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK9Y25-60E,115 BUK9Y25-60E.pdf
BUK9Y25-60E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 34A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 46500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+84.63 грн
10+59.71 грн
100+43.82 грн
500+32.18 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BUK9Y29-40E,115 BUK9Y29-40E.pdf
BUK9Y29-40E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9Y38-100E,115 BUK9Y38-100E.pdf
BUK9Y38-100E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 5V
Power Dissipation (Max): 94.9W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2541 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1446 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+108.81 грн
10+65.70 грн
50+48.70 грн
100+40.54 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUK9Y3R0-40E,115 BUK9Y3R0-40E.pdf
BUK9Y3R0-40E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5962 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3203 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.63 грн
10+98.55 грн
100+71.74 грн
500+57.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK9Y43-60E,115 BUK9Y43-60E.pdf
BUK9Y43-60E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 22A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6699 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+63.04 грн
10+38.09 грн
100+24.67 грн
500+17.72 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BUK9Y4R4-40E,115 BUK9Y4R4-40E.pdf
BUK9Y4R4-40E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4077 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BUK9Y4R8-60E,115 BUK9Y4R8-60E.pdf
BUK9Y4R8-60E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7853 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Qualification: AEC-Q101
на замовлення 10609 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+240.08 грн
10+149.52 грн
50+114.30 грн
100+96.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BUK9Y6R0-60E,115 BUK9Y6R0-60E.pdf
BUK9Y6R0-60E,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6319 pF @ 25 V
Qualification: AEC-Q101
на замовлення 528 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+177.04 грн
10+108.69 грн
50+82.11 грн
100+69.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSMN011-60MLX PSMN011-60ML.pdf
PSMN011-60MLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 61A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2191 pF @ 30 V
на замовлення 911 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+114.00 грн
10+68.77 грн
50+51.04 грн
100+42.53 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PSMN041-80YLX PSMN041-80YL.pdf
PSMN041-80YLX
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 25 V
на замовлення 1492 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.04 грн
10+60.96 грн
50+45.09 грн
100+37.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PMT21EN,115 PMT21EN.pdf
PMT21EN,115
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 7.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Power Dissipation (Max): 820mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 588 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
1PS70SB10,115 1PS70SB10.pdf
1PS70SB10,115
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+21.59 грн
27+12.72 грн
50+9.06 грн
100+7.40 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
1PS79SB31,115 1PS79SB31.pdf
1PS79SB31,115
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 3030 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+23.32 грн
24+14.05 грн
50+10.05 грн
100+8.21 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
2PB709ART,215 2PB709ART.pdf
2PB709ART,215
Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+14.68 грн
39+8.73 грн
54+6.17 грн
100+5.02 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
2PD601ART,215 2PD601ART.pdf
2PD601ART,215
Виробник: Nexperia USA Inc.
Description: TRANS NPN 50V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1661 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+12.09 грн
48+6.99 грн
100+4.31 грн
500+2.93 грн
1000+2.57 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
2PD601BRL,215 2PD601BRL_2PD601BSL.pdf
2PD601BRL,215
Виробник: Nexperia USA Inc.
Description: TRANS NPN 50V 0.2A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1701 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+18.14 грн
31+10.81 грн
50+7.72 грн
100+6.27 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
74HCT1G86GW,125 74HC_HCT1G86.pdf
74HCT1G86GW,125
Виробник: Nexperia USA Inc.
Description: IC GATE XOR 1CH 2-INP 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 2mA
Number of Inputs: 2
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 13ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 20 µA
товару немає в наявності
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74HCT574PW,118 74HC_HCT574.pdf
74HCT574PW,118
Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 6mA, 6mA
Trigger Type: Positive Edge
Clock Frequency: 76 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 33ns @ 4.5V, 50pF
Part Status: Active
Number of Bits per Element: 8
на замовлення 26404 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+38.00 грн
13+25.70 грн
25+22.95 грн
100+18.68 грн
250+17.31 грн
500+16.49 грн
1000+15.56 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BAS21AW,115 BAS21AW.pdf
BAS21AW,115
Виробник: Nexperia USA Inc.
Description: DIODE ARRAY GP 250V 225MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 3668 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+18.14 грн
32+10.73 грн
100+6.67 грн
500+4.59 грн
1000+4.05 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BAS40-05V,115 BAS40-05V.pdf
BAS40-05V,115
Виробник: Nexperia USA Inc.
Description: DIODE ARR SCHOT 40V 120MA SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT-666
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
BAS45A,113 BAS45A.pdf
BAS45A,113
Виробник: Nexperia USA Inc.
Description: DIODE STANDARD 125V 250MA DO34
Packaging: Cut Tape (CT)
Package / Case: DO-204AG, DO-34, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-34
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
на замовлення 13476 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+31.09 грн
18+18.55 грн
100+11.67 грн
500+8.16 грн
1000+7.27 грн
2000+6.51 грн
5000+5.59 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BAS70-07S,115 BAS70-07S.pdf
BAS70-07S,115
Виробник: Nexperia USA Inc.
Description: DIODE ARR SCHOTT 70V 70MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
на замовлення 1189 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+19.00 грн
29+11.48 грн
100+7.14 грн
500+4.92 грн
1000+4.34 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
BAT74S,115 BAT74S.pdf
BAT74S,115
Виробник: Nexperia USA Inc.
Description: DIODE ARR SCHOT 30V 200MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 16602 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+20.73 грн
26+12.97 грн
100+10.80 грн
500+7.54 грн
1000+6.70 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BAW156,215 BAW156.pdf
BAW156,215
Виробник: Nexperia USA Inc.
Description: DIODE ARRAY GP 75V 160MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 160mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3622 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+12.95 грн
45+7.48 грн
100+4.63 грн
500+3.16 грн
1000+2.77 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BC846DS,115 BC846DS.pdf
BC846DS,115
Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 65V 100MA 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2752 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+24.18 грн
24+14.22 грн
100+8.91 грн
500+6.18 грн
1000+5.48 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
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