Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (30503) > Сторінка 126 з 509
Фото | Назва | Виробник | Інформація |
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NX3008NBKS,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 445mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 854447 шт: термін постачання 21-31 дні (днів) |
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PBSS4350X,147 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.6 W Grade: Automotive Qualification: AEC-Q100 |
на замовлення 793 шт: термін постачання 21-31 дні (днів) |
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PBSS5350X,147 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.6 W Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2306 шт: термін постачання 21-31 дні (днів) |
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PESD1LIN,135 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TA) Capacitance @ Frequency: 13pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 15V (Max), 24V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 44V, 70V Power - Peak Pulse: 160W Power Line Protection: No Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15437 шт: термін постачання 21-31 дні (днів) |
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PESD5V0L1BA,135 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 75pF @ 1MHz Current - Peak Pulse (10/1000µs): 15A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 33V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q100 |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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PMEG2010EA,135 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 25pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 65600 шт: термін постачання 21-31 дні (днів) |
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PMF170XP,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 4.5V Power Dissipation (Max): 290mW (Ta), 1.67W (Tc) Vgs(th) (Max) @ Id: 1.15V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V |
на замовлення 30390 шт: термін постачання 21-31 дні (днів) |
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PMP5201G,135 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 175MHz Supplier Device Package: 5-TSSOP Part Status: Obsolete Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN4R0-30YLDX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 15 V |
на замовлення 40500 шт: термін постачання 21-31 дні (днів) |
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PSMN4R0-30YLDX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 15 V |
на замовлення 41625 шт: термін постачання 21-31 дні (днів) |
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2N7002BKMB,315 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 450mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NX3008NBKMB,315 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V |
на замовлення 14854 шт: термін постачання 21-31 дні (днів) |
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PMDPB58UPE,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 515mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 6-HUSON (2x2) |
на замовлення 7549 шт: термін постачання 21-31 дні (днів) |
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PMPB33XP,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 5.5A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V |
на замовлення 7508 шт: термін постачання 21-31 дні (днів) |
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PMPB40SNA,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PMPB48EP,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PMPB11EN,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9A, 10V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
на замовлення 78320 шт: термін постачання 21-31 дні (днів) |
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2N7002PS,125 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 420mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 6-TSSOP Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q100 |
на замовлення 10986 шт: термін постачання 21-31 дні (днів) |
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BC51PA,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 145MHz Supplier Device Package: 3-HUSON (2x2) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 420 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 452 шт: термін постачання 21-31 дні (днів) |
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BC52-10PA,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 145MHz Supplier Device Package: 3-HUSON (2x2) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 420 mW Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC52-16PA,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 145MHz Supplier Device Package: 3-HUSON (2x2) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 420 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1037 шт: термін постачання 21-31 дні (днів) |
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BC53PA,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 145MHz Supplier Device Package: 3-HUSON (2x2) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 420 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 255 шт: термін постачання 21-31 дні (днів) |
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BC54PA,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-PowerUDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Supplier Device Package: 3-HUSON (2x2) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 420 mW |
на замовлення 2126 шт: термін постачання 21-31 дні (днів) |
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BSS138AKAR | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250mA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9548 шт: термін постачання 21-31 дні (днів) |
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BSS138BKW,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 120620 шт: термін постачання 21-31 дні (днів) |
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BSS84AKM,315 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Power Dissipation (Max): 340mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10373 шт: термін постачання 21-31 дні (днів) |
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BSS84AKMB,315 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V |
на замовлення 12917 шт: термін постачання 21-31 дні (днів) |
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BSS84AKV,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 170mA Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
на замовлення 15336 шт: термін постачання 21-31 дні (днів) |
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IP3254CZ12-6-TTL,1 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 12-UFDFN Exposed Pad Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: L = 18nH (Total), C = 33pF (Total) Height: 0.022" (0.55mm) Attenuation Value: 30dB @ 1GHz ~ 4GHz Filter Order: 3rd Applications: GSM, LAN, PCS, WAN Technology: LC (Pi) Center / Cutoff Frequency: 145MHz (Cutoff) Resistance - Channel (Ohms): 8 ESD Protection: Yes Number of Channels: 6 Current: 30 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IP3254CZ16-8-TTL,1 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 16-UFDFN Exposed Pad Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: L = 18nH (Total), C = 33pF (Total) Height: 0.022" (0.55mm) Attenuation Value: 30dB @ 1GHz ~ 4GHz Filter Order: 3rd Applications: GSM, LAN, PCS, WAN Technology: LC (Pi) Center / Cutoff Frequency: 145MHz (Cutoff) Resistance - Channel (Ohms): 8 ESD Protection: Yes Number of Channels: 8 Current: 30 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IP4252CZ8-4-TTL,13 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 40Ohms, C = 12pF (Total) Height: 0.022" (0.55mm) Attenuation Value: 12dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: LAN, WAN Technology: RC (Pi) Resistance - Channel (Ohms): 40 ESD Protection: Yes Part Status: Active Number of Channels: 4 |
на замовлення 16515 шт: термін постачання 21-31 дні (днів) |
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IP4264CZ8-10-TTL,1 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -30°C ~ 85°C Values: R = 47Ohms, 100Ohms, C = 6pF (Total) Height: 0.022" (0.55mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 47, 100 ESD Protection: Yes Number of Channels: 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IP4264CZ8-20-TTL,1 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -30°C ~ 85°C Values: R = 47Ohms, 100Ohms, C = 11pF (Total) Height: 0.022" (0.55mm) Attenuation Value: 45dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 47, 100 ESD Protection: Yes Number of Channels: 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
IP4327CX15,135 | Nexperia USA Inc. | Description: TVS DIODE WAFER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NX3008CBKS,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 445mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA, 200mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 17272 шт: термін постачання 21-31 дні (днів) |
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NX3008CBKV,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
на замовлення 33259 шт: термін постачання 21-31 дні (днів) |
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NX3008NBKW,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 632378 шт: термін постачання 21-31 дні (днів) |
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NX3008PBK,215 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Power Dissipation (Max): 350mW (Ta), 1.14W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 90860 шт: термін постачання 21-31 дні (днів) |
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NX3008PBKS,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 445mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 229709 шт: термін постачання 21-31 дні (днів) |
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NX3008PBKV,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
на замовлення 3862 шт: термін постачання 21-31 дні (днів) |
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NX3008PBKW,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 13191 шт: термін постачання 21-31 дні (днів) |
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NX3020NAK,215 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V |
на замовлення 76749 шт: термін постачання 21-31 дні (днів) |
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NX3020NAKS,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 375mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 180mA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSSOP Part Status: Active |
на замовлення 46920 шт: термін постачання 21-31 дні (днів) |
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NX3020NAKV,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 375mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-666 |
на замовлення 378649 шт: термін постачання 21-31 дні (днів) |
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NX3020NAKW,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 260mW (Ta), 1.1W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V |
на замовлення 212409 шт: термін постачання 21-31 дні (днів) |
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NX7002AK,215 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 265mW (Ta), 1.33W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 279631 шт: термін постачання 21-31 дні (днів) |
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NX7002AKS,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 220mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-TSSOP Part Status: Active |
на замовлення 7484 шт: термін постачання 21-31 дні (днів) |
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NX7002AKW,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 220mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 1306 шт: термін постачання 21-31 дні (днів) |
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PBSM5240PFH,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Voltage - Rated: 40V PNP, 30V N-Channel Package / Case: 6-UFDFN Exposed Pad Current Rating (Amps): 1.8A PNP, 660mA N-Channel Mounting Type: Surface Mount Transistor Type: PNP, N-Channel Applications: General Purpose Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PBSS2515MB,315 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Frequency - Transition: 420MHz Supplier Device Package: DFN1006B-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 250 mW Qualification: AEC-Q100 |
на замовлення 27743 шт: термін постачання 21-31 дні (днів) |
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PBSS2540MB,315 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 50mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Frequency - Transition: 450MHz Supplier Device Package: DFN1006B-3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Qualification: AEC-Q100 |
на замовлення 9324 шт: термін постачання 21-31 дні (днів) |
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PBSS3515MB,315 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Frequency - Transition: 280MHz Supplier Device Package: DFN1006B-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 250 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1946 шт: термін постачання 21-31 дні (днів) |
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PBSS4240XF | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 9231 шт: термін постачання 21-31 дні (днів) |
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PBSS5240XF | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 140mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-89 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW Qualification: AEC-Q100 |
на замовлення 10617 шт: термін постачання 21-31 дні (днів) |
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PESD12VS1ULD,315 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 38pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: DFN1006D-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.7V Voltage - Clamping (Max) @ Ipp: 35V Power - Peak Pulse: 150W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PESD12VV1BL,315 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 17pF @ 1MHz Current - Peak Pulse (10/1000µs): 7.8A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: DFN1006-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.6V Voltage - Clamping (Max) @ Ipp: 38V Power - Peak Pulse: 290W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 13773 шт: термін постачання 21-31 дні (днів) |
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PESD15VS1ULD,315 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 32pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: DFN1006D-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.6V Voltage - Clamping (Max) @ Ipp: 40V Power - Peak Pulse: 150W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 282 шт: термін постачання 21-31 дні (днів) |
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PESD1CAN-UX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: CAN Capacitance @ Frequency: 9.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-323 Bidirectional Channels: 2 Voltage - Breakdown (Min): 25.4V Voltage - Clamping (Max) @ Ipp: 50V Power - Peak Pulse: 150W Power Line Protection: No Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
на замовлення 367753 шт: термін постачання 21-31 дні (днів) |
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PESD1LVDS,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 10-XFDFN Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TA) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: DFN2510-10 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Power Line Protection: Yes Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 23608 шт: термін постачання 21-31 дні (днів) |
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PESD36VS1UL,315 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 18pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 36V (Max) Supplier Device Package: DFN1006-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 38.2V Voltage - Clamping (Max) @ Ipp: 80V Power - Peak Pulse: 150W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 189527 шт: термін постачання 21-31 дні (днів) |
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NX3008NBKS,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.35A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 0.35A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 854447 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.69 грн |
20+ | 16.15 грн |
100+ | 9.27 грн |
500+ | 6.80 грн |
1000+ | 4.99 грн |
PBSS4350X,147 |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 50V 3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 50V 3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 793 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 36.64 грн |
15+ | 21.49 грн |
100+ | 13.67 грн |
500+ | 9.63 грн |
PBSS5350X,147 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 50V 3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 50V 3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2306 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 33.39 грн |
16+ | 20.07 грн |
100+ | 12.71 грн |
500+ | 8.93 грн |
PESD1LIN,135 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 15VWM 24VWM SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max), 24V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 44V, 70V
Power - Peak Pulse: 160W
Power Line Protection: No
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 15VWM 24VWM SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max), 24V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 44V, 70V
Power - Peak Pulse: 160W
Power Line Protection: No
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15437 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 26.06 грн |
19+ | 17.02 грн |
100+ | 7.32 грн |
500+ | 6.28 грн |
1000+ | 5.68 грн |
2000+ | 5.54 грн |
5000+ | 5.31 грн |
PESD5V0L1BA,135 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 33VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
Description: TVS DIODE 5VWM 33VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.62 грн |
21+ | 15.60 грн |
100+ | 6.05 грн |
500+ | 5.35 грн |
1000+ | 4.19 грн |
2000+ | 4.14 грн |
PMEG2010EA,135 |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 65600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
17+ | 19.54 грн |
25+ | 12.62 грн |
100+ | 10.44 грн |
500+ | 6.84 грн |
1000+ | 5.23 грн |
2000+ | 4.98 грн |
5000+ | 4.25 грн |
PMF170XP,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 4.5V
Power Dissipation (Max): 290mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Description: MOSFET P-CH 20V 1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 4.5V
Power Dissipation (Max): 290mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
на замовлення 30390 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.62 грн |
23+ | 13.96 грн |
100+ | 8.77 грн |
500+ | 6.07 грн |
1000+ | 5.37 грн |
PMP5201G,135 |
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Виробник: Nexperia USA Inc.
Description: TRANS 2PNP 45V 100MA 5-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: 5-TSSOP
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS 2PNP 45V 100MA 5-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: 5-TSSOP
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
PSMN4R0-30YLDX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 95A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 15 V
Description: MOSFET N-CH 30V 95A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 15 V
на замовлення 40500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 25.79 грн |
3000+ | 22.81 грн |
4500+ | 21.77 грн |
7500+ | 19.93 грн |
PSMN4R0-30YLDX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 95A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 15 V
Description: MOSFET N-CH 30V 95A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 15 V
на замовлення 41625 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 84.69 грн |
10+ | 51.28 грн |
100+ | 33.77 грн |
500+ | 24.62 грн |
2N7002BKMB,315 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 450MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 450mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Description: MOSFET N-CH 60V 450MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 450mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
NX3008NBKMB,315 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 530MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Description: MOSFET N-CH 30V 530MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
на замовлення 14854 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
17+ | 19.54 грн |
27+ | 11.76 грн |
100+ | 6.09 грн |
500+ | 5.00 грн |
1000+ | 4.33 грн |
2000+ | 3.94 грн |
5000+ | 3.35 грн |
PMDPB58UPE,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
на замовлення 7549 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.27 грн |
13+ | 24.78 грн |
100+ | 18.53 грн |
500+ | 13.23 грн |
1000+ | 10.80 грн |
PMPB33XP,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.5A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Description: MOSFET P-CH 20V 5.5A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
на замовлення 7508 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 31.76 грн |
14+ | 23.84 грн |
100+ | 14.22 грн |
500+ | 10.75 грн |
1000+ | 8.96 грн |
PMPB40SNA,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 12.9A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V
Description: MOSFET N-CH 60V 12.9A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
PMPB48EP,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 4.7A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Description: MOSFET P-CH 30V 4.7A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
PMPB11EN,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 9A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: MOSFET N-CH 30V 9A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
на замовлення 78320 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 25.24 грн |
17+ | 19.13 грн |
100+ | 15.89 грн |
500+ | 12.19 грн |
1000+ | 10.50 грн |
2N7002PS,125 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.32A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET 2N-CH 60V 0.32A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
на замовлення 10986 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 20.36 грн |
24+ | 13.10 грн |
100+ | 6.71 грн |
500+ | 6.13 грн |
1000+ | 5.44 грн |
BC51PA,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 45V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 452 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 29.32 грн |
19+ | 17.41 грн |
100+ | 10.95 грн |
BC52-10PA,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 60V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
BC52-16PA,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 60V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 60V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1037 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 30.13 грн |
18+ | 17.80 грн |
100+ | 11.20 грн |
500+ | 7.84 грн |
1000+ | 6.97 грн |
BC53PA,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 80V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 80V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 420 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 255 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 31.76 грн |
17+ | 18.98 грн |
100+ | 11.95 грн |
BC54PA,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 45V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
Description: TRANS NPN 45V 1A 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 3-HUSON (2x2)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 420 mW
на замовлення 2126 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 29.32 грн |
19+ | 17.25 грн |
100+ | 10.85 грн |
500+ | 7.60 грн |
1000+ | 6.76 грн |
BSS138AKAR |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 200MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250mA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 200MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250mA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9548 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 17.10 грн |
31+ | 10.19 грн |
100+ | 6.34 грн |
500+ | 4.36 грн |
1000+ | 3.85 грн |
BSS138BKW,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 320MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 320MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 120620 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
17+ | 19.54 грн |
37+ | 8.70 грн |
100+ | 5.59 грн |
500+ | 4.43 грн |
BSS84AKM,315 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 50V 230MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 340mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 50V 230MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 340mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10373 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 22.80 грн |
23+ | 13.72 грн |
100+ | 8.59 грн |
500+ | 5.96 грн |
1000+ | 5.29 грн |
2000+ | 4.71 грн |
5000+ | 4.03 грн |
BSS84AKMB,315 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 50V 230MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Description: MOSFET P-CH 50V 230MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
на замовлення 12917 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 24.43 грн |
22+ | 14.43 грн |
100+ | 9.08 грн |
500+ | 6.32 грн |
1000+ | 5.60 грн |
2000+ | 5.00 грн |
5000+ | 4.28 грн |
BSS84AKV,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 50V 0.17A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Description: MOSFET 2P-CH 50V 0.17A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
на замовлення 15336 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 26.87 грн |
20+ | 15.76 грн |
100+ | 9.88 грн |
500+ | 6.89 грн |
1000+ | 6.12 грн |
2000+ | 5.48 грн |
IP3254CZ12-6-TTL,1 |
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Виробник: Nexperia USA Inc.
Description: FILTER LC(PI) 18NH/33PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 18nH (Total), C = 33pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 30dB @ 1GHz ~ 4GHz
Filter Order: 3rd
Applications: GSM, LAN, PCS, WAN
Technology: LC (Pi)
Center / Cutoff Frequency: 145MHz (Cutoff)
Resistance - Channel (Ohms): 8
ESD Protection: Yes
Number of Channels: 6
Current: 30 mA
Description: FILTER LC(PI) 18NH/33PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 18nH (Total), C = 33pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 30dB @ 1GHz ~ 4GHz
Filter Order: 3rd
Applications: GSM, LAN, PCS, WAN
Technology: LC (Pi)
Center / Cutoff Frequency: 145MHz (Cutoff)
Resistance - Channel (Ohms): 8
ESD Protection: Yes
Number of Channels: 6
Current: 30 mA
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од. на суму грн.
IP3254CZ16-8-TTL,1 |
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Виробник: Nexperia USA Inc.
Description: FILTER LC(PI) 18NH/33PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 18nH (Total), C = 33pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 30dB @ 1GHz ~ 4GHz
Filter Order: 3rd
Applications: GSM, LAN, PCS, WAN
Technology: LC (Pi)
Center / Cutoff Frequency: 145MHz (Cutoff)
Resistance - Channel (Ohms): 8
ESD Protection: Yes
Number of Channels: 8
Current: 30 mA
Description: FILTER LC(PI) 18NH/33PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 18nH (Total), C = 33pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 30dB @ 1GHz ~ 4GHz
Filter Order: 3rd
Applications: GSM, LAN, PCS, WAN
Technology: LC (Pi)
Center / Cutoff Frequency: 145MHz (Cutoff)
Resistance - Channel (Ohms): 8
ESD Protection: Yes
Number of Channels: 8
Current: 30 mA
товару немає в наявності
В кошику
од. на суму грн.
IP4252CZ8-4-TTL,13 |
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Виробник: Nexperia USA Inc.
Description: FILTER RC(PI) 40 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 12pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 12dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: LAN, WAN
Technology: RC (Pi)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Part Status: Active
Number of Channels: 4
Description: FILTER RC(PI) 40 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 12pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 12dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: LAN, WAN
Technology: RC (Pi)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Part Status: Active
Number of Channels: 4
на замовлення 16515 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 29.32 грн |
14+ | 22.82 грн |
25+ | 21.05 грн |
50+ | 18.56 грн |
100+ | 17.46 грн |
250+ | 16.10 грн |
500+ | 14.90 грн |
1000+ | 14.01 грн |
IP4264CZ8-10-TTL,1 |
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Виробник: Nexperia USA Inc.
Description: FILTER RC(PI) ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 6pF (Total)
Height: 0.022" (0.55mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Number of Channels: 3
Description: FILTER RC(PI) ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 6pF (Total)
Height: 0.022" (0.55mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Number of Channels: 3
товару немає в наявності
В кошику
од. на суму грн.
IP4264CZ8-20-TTL,1 |
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Виробник: Nexperia USA Inc.
Description: FILTER RC(PI) 47 OHMSESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 11pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 45dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Number of Channels: 3
Description: FILTER RC(PI) 47 OHMSESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 11pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 45dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Number of Channels: 3
товару немає в наявності
В кошику
од. на суму грн.
IP4327CX15,135 |
Виробник: Nexperia USA Inc.
Description: TVS DIODE WAFER
Description: TVS DIODE WAFER
товару немає в наявності
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од. на суму грн.
NX3008CBKS,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 30V 0.35A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 0.35A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 17272 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 24.43 грн |
22+ | 14.51 грн |
100+ | 9.10 грн |
500+ | 6.33 грн |
1000+ | 5.61 грн |
NX3008CBKV,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 30V 0.4A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 0.4A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
на замовлення 33259 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 30.94 грн |
18+ | 18.04 грн |
100+ | 11.39 грн |
500+ | 7.99 грн |
1000+ | 6.75 грн |
2000+ | 6.02 грн |
NX3008NBKW,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 350MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 350MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Qualification: AEC-Q101
на замовлення 632378 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 16.29 грн |
30+ | 10.74 грн |
100+ | 6.24 грн |
500+ | 3.99 грн |
1000+ | 3.05 грн |
NX3008PBK,215 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 230MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 230MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
Qualification: AEC-Q101
на замовлення 90860 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.84 грн |
39+ | 8.16 грн |
100+ | 5.03 грн |
500+ | 3.44 грн |
1000+ | 2.98 грн |
NX3008PBKS,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 30V 0.2A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2P-CH 30V 0.2A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 229709 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.69 грн |
20+ | 16.47 грн |
100+ | 10.19 грн |
500+ | 7.17 грн |
1000+ | 5.54 грн |
NX3008PBKV,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 30V 0.22A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Description: MOSFET 2P-CH 30V 0.22A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
на замовлення 3862 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 30.13 грн |
18+ | 17.72 грн |
100+ | 11.20 грн |
500+ | 7.85 грн |
1000+ | 6.48 грн |
2000+ | 5.75 грн |
NX3008PBKW,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
Qualification: AEC-Q101
на замовлення 13191 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 17.10 грн |
32+ | 9.96 грн |
100+ | 6.20 грн |
500+ | 4.26 грн |
1000+ | 3.59 грн |
NX3020NAK,215 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 200MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
Description: MOSFET N-CH 30V 200MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
на замовлення 76749 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
27+ | 12.21 грн |
38+ | 8.31 грн |
100+ | 4.23 грн |
500+ | 3.29 грн |
1000+ | 2.61 грн |
NX3020NAKS,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.18A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Description: MOSFET 2N-CH 30V 0.18A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 46920 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.62 грн |
23+ | 13.88 грн |
100+ | 6.57 грн |
500+ | 5.84 грн |
NX3020NAKV,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.2A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-666
Description: MOSFET 2N-CH 30V 0.2A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-666
на замовлення 378649 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 31.76 грн |
18+ | 18.43 грн |
100+ | 8.12 грн |
500+ | 7.15 грн |
1000+ | 6.09 грн |
2000+ | 6.03 грн |
NX3020NAKW,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 180MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 260mW (Ta), 1.1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
Description: MOSFET N-CH 30V 180MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 260mW (Ta), 1.1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
на замовлення 212409 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 16.29 грн |
34+ | 9.49 грн |
100+ | 5.90 грн |
500+ | 4.06 грн |
1000+ | 3.58 грн |
NX7002AK,215 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 190MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 190MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 279631 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
37+ | 8.96 грн |
54+ | 5.88 грн |
107+ | 2.93 грн |
500+ | 2.58 грн |
1000+ | 2.21 грн |
NX7002AKS,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.17A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Description: MOSFET 2N-CH 60V 0.17A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 7484 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 21.99 грн |
25+ | 12.94 грн |
100+ | 5.43 грн |
500+ | 5.08 грн |
1000+ | 4.60 грн |
NX7002AKW,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 170MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 220mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 170MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 220mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 1306 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
29+ | 11.40 грн |
43+ | 7.37 грн |
100+ | 3.47 грн |
500+ | 2.91 грн |
1000+ | 2.55 грн |
PBSM5240PFH,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP/N CH 40V 1.8A 6HUSON
Packaging: Cut Tape (CT)
Voltage - Rated: 40V PNP, 30V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Current Rating (Amps): 1.8A PNP, 660mA N-Channel
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: TRANS PNP/N CH 40V 1.8A 6HUSON
Packaging: Cut Tape (CT)
Voltage - Rated: 40V PNP, 30V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Current Rating (Amps): 1.8A PNP, 660mA N-Channel
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
PBSS2515MB,315 |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 15V 0.5A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Qualification: AEC-Q100
Description: TRANS NPN 15V 0.5A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Qualification: AEC-Q100
на замовлення 27743 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 17.10 грн |
31+ | 10.27 грн |
100+ | 6.41 грн |
500+ | 4.41 грн |
1000+ | 3.89 грн |
2000+ | 3.45 грн |
5000+ | 2.93 грн |
PBSS2540MB,315 |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 0.5A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 50mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 450MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q100
Description: TRANS NPN 40V 0.5A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 50mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 450MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q100
на замовлення 9324 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 17.10 грн |
31+ | 10.35 грн |
100+ | 6.45 грн |
500+ | 4.44 грн |
1000+ | 3.92 грн |
2000+ | 3.48 грн |
5000+ | 2.95 грн |
PBSS3515MB,315 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 15V 0.5A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 15V 0.5A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 25mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1946 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 17.91 грн |
30+ | 10.66 грн |
100+ | 6.65 грн |
500+ | 4.58 грн |
1000+ | 4.04 грн |
PBSS4240XF |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 40V 2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 9231 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 36.64 грн |
15+ | 22.11 грн |
100+ | 14.08 грн |
500+ | 9.94 грн |
1000+ | 8.88 грн |
2000+ | 7.99 грн |
PBSS5240XF |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 40V 2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: AEC-Q100
Description: TRANS PNP 40V 2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Qualification: AEC-Q100
на замовлення 10617 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 30.94 грн |
18+ | 18.27 грн |
100+ | 11.49 грн |
500+ | 8.03 грн |
1000+ | 7.14 грн |
2000+ | 6.39 грн |
PESD12VS1ULD,315 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 12VWM 35VC DFN1006D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DFN1006D-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.7V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 35VC DFN1006D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DFN1006D-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.7V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
PESD12VV1BL,315 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 12VWM 38VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 17pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.6V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 290W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 38VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 17pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.6V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 290W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 13773 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
29+ | 11.40 грн |
40+ | 7.92 грн |
103+ | 3.07 грн |
500+ | 2.76 грн |
1000+ | 2.57 грн |
2000+ | 2.54 грн |
5000+ | 2.47 грн |
PESD15VS1ULD,315 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 15VWM 40VC DFN1006D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: DFN1006D-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.6V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 15VWM 40VC DFN1006D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: DFN1006D-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.6V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 282 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
22+ | 15.47 грн |
32+ | 9.96 грн |
100+ | 5.93 грн |
PESD1CAN-UX |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 24VWM 50VC SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: CAN
Capacitance @ Frequency: 9.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 50VC SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: CAN
Capacitance @ Frequency: 9.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
на замовлення 367753 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 35.83 грн |
15+ | 21.09 грн |
100+ | 13.41 грн |
500+ | 9.45 грн |
1000+ | 8.43 грн |
PESD1LVDS,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM DFN2510-10
Packaging: Cut Tape (CT)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM DFN2510-10
Packaging: Cut Tape (CT)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 23608 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 81.43 грн |
10+ | 49.09 грн |
100+ | 32.27 грн |
500+ | 23.49 грн |
1000+ | 21.30 грн |
2000+ | 19.46 грн |
PESD36VS1UL,315 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 36VWM 80VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 38.2V
Voltage - Clamping (Max) @ Ipp: 80V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 36VWM 80VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 38.2V
Voltage - Clamping (Max) @ Ipp: 80V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 189527 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
29+ | 11.40 грн |
45+ | 6.98 грн |
116+ | 2.72 грн |