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BAP64-05,215 BAP64-05,215 NXP USA Inc. BAP64-05.pdf Description: RF DIODE PIN 175V 250MW TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 175V
Supplier Device Package: SOT-23 (TO-236AB)
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAP64-06,215 BAP64-06,215 NXP USA Inc. BAP64-06.pdf Description: RF DIODE PIN 175V 250MW TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 175V
Supplier Device Package: SOT-23 (TO-236AB)
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAP64-06W,115 BAP64-06W,115 NXP USA Inc. BAP64-06W.pdf Description: RF DIODE PIN 100V 240MW SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: SC-70
Current - Max: 100 mA
Power Dissipation (Max): 240 mW
товар відсутній
BAP65-02,115 BAP65-02,115 NXP USA Inc. BAP65-02.pdf Description: RF DIODE PIN 30V 715MW SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.375pF @ 20V, 1MHz
Resistance @ If, F: 350mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SOD-523
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 715 mW
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+9.76 грн
6000+ 8.79 грн
15000+ 8.18 грн
Мінімальне замовлення: 3000
BAP65-03,115 BAP65-03,115 NXP USA Inc. BAP65-03.pdf Description: RF DIODE PIN 30V 500MW SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.375pF @ 20V, 1MHz
Resistance @ If, F: 350mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SOD-323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 500 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+6.65 грн
Мінімальне замовлення: 3000
BAP65-05W,115 BAP65-05W,115 NXP USA Inc. BAP65-05W.pdf Description: RF DIODE PIN 30V 240MW SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.425pF @ 20V, 1MHz
Resistance @ If, F: 350mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SC-70
Current - Max: 100 mA
Power Dissipation (Max): 240 mW
товар відсутній
BAP70-02,115 BAP70-02,115 NXP USA Inc. BAP70-02.pdf Description: RF DIODE PIN 50V 415MW SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.25pF @ 20V, 1MHz
Resistance @ If, F: 1.9Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SOD-523
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 415 mW
товар відсутній
BAP70-03,115 BAP70-03,115 NXP USA Inc. BAP70-03.pdf Description: RF DIODE PIN 50V 500MW SOD323
товар відсутній
BAT18,215 BAT18,215 NXP USA Inc. BAT18.pdf Description: RF DIODE STANDARD 35V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Standard - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Current - Max: 100 mA
товар відсутній
BB178,115 BB178,115 NXP USA Inc. BB178_Rev3.pdf Description: DIODE VHF VAR CAP 32V SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.754pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD-523
Part Status: Obsolete
Voltage - Peak Reverse (Max): 32 V
Capacitance Ratio: 15
товар відсутній
BB179,115 BB179,115 NXP USA Inc. BB179_Rev3.pdf Description: DIODE UHF VAR CAP 30V SOD523
товар відсутній
BB179B,115 BB179B,115 NXP USA Inc. BB179B_Rev3.pdf Description: DIODE UHF VAR CAP 32V SOD523
товар відсутній
BB181,115 BB181,115 NXP USA Inc. BB181.pdf Description: DIODE VHF VAR CAP 30V SOD523
товар відсутній
BB201,215 BB201,215 NXP USA Inc. BB201.pdf Description: DIODE VAR CAP DUAL 15V SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 25.5pF @ 8V, 1MHz
Capacitance Ratio Condition: C1/C7.5
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Active
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 3.8
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
3000+19.14 грн
6000+ 17.46 грн
9000+ 16.17 грн
30000+ 15.02 грн
Мінімальне замовлення: 3000
BB202,115 BB202,115 NXP USA Inc. BB202_N.pdf Description: DIODE VAR CAP 6V SOD-523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 85°C (TJ)
Capacitance @ Vr, F: 11.2pF @ 2.3V, 1MHz
Capacitance Ratio Condition: C0.2/C2.3
Supplier Device Package: SOD-523
Part Status: Active
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.5
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+19.56 грн
Мінімальне замовлення: 3000
BB207,215 BB207,215 NXP USA Inc. BB207.pdf Description: DIODE FM VAR CAP 15V SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 26.3pF @ 8V, 1MHz
Capacitance Ratio Condition: C1/C7.5
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Active
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 3.3
товар відсутній
BB208-03,115 BB208-03,115 NXP USA Inc. BB208-02_BB208-03.pdf Description: DIODE VAR CAP 10V SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 5.4pF @ 7.5V, 1MHz
Capacitance Ratio Condition: C1/C7.5
Supplier Device Package: SOD-323
Part Status: Obsolete
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 5.2
товар відсутній
BBY31,215 BBY31,215 NXP USA Inc. DS_568_BBY31.pdf Description: DIODE UHF VAR CAP 30V SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 8.3
товар відсутній
BBY40,215 BBY40,215 NXP USA Inc. BBY40.pdf Description: DIODE VHF VAR CAP 30V SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 6pF @ 25V, 1MHz
Capacitance Ratio Condition: C3/C25
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 6.5
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+10.09 грн
Мінімальне замовлення: 3000
BF1211,215 BF1211,215 NXP USA Inc. BF1211%28R%2CWR%29.pdf Description: RF MOSFET 5V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 29dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 15 mA
товар відсутній
BF1211R,215 BF1211R,215 NXP USA Inc. BF1211%28R%2CWR%29.pdf Description: RF MOSFET 5V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 29dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 15 mA
товар відсутній
BF1211WR,115 BF1211WR,115 NXP USA Inc. BF1211(R,WR).pdf Description: MOSFET N-CH DUAL GATE 6V SOT343R
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 29dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 15 mA
товар відсутній
BF1212,215 BF1212,215 NXP USA Inc. BF1212_R_WR_Rev_Oct2010.pdf Description: RF MOSFET 5V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 12 mA
товар відсутній
BF1212R,215 BF1212R,215 NXP USA Inc. BF1212_R_WR_Rev_Oct2010.pdf Description: RF MOSFET 5V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 12 mA
товар відсутній
BF1212WR,115 BF1212WR,115 NXP USA Inc. BF1212_R_WR_Rev_Oct2010.pdf Description: RF MOSFET 5V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 12 mA
товар відсутній
BF511,215 BF511,215 NXP USA Inc. BF510_511_512_513_CNV.pdf Description: RF MOSFET JFET 10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
товар відсутній
BF545C,215 BF545C,215 NXP USA Inc. BF545A%2CB%2CC.pdf Description: RF MOSFET JFET 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
товар відсутній
BF861B,215 BF861B,215 NXP USA Inc. BF861A_BF861B_BF861C.pdf Description: RF MOSFET JFET 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 25 V
товар відсутній
BF862,215 BF862,215 NXP USA Inc. BF862.pdf Description: RF MOSFET JFET SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
товар відсутній
BF908WR,115 BF908WR,115 NXP USA Inc. BF908WR_Rev_Oct2010.pdf Description: RF MOSFET 8V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 15 mA
товар відсутній
BF991,215 BF991,215 NXP USA Inc. BF991_Rev3.pdf Description: RF MOSFET 10V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 20mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel Dual Gate
Gain: 29dB
Technology: MOSFET
Noise Figure: 0.7dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 10 mA
товар відсутній
BF992,215 BF992,215 NXP USA Inc. BF992.pdf Description: RF MOSFET 10V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.2dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 15 mA
товар відсутній
BF994S,215 BF994S,215 NXP USA Inc. BF994S.pdf Description: RF MOSFET 15V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 25dB
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 15 V
Current - Test: 10 mA
товар відсутній
BF998,215 BF998,215 NXP USA Inc. BF998%28R%29_Rev_Oct2010.pdf Description: RF MOSFET 8V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 10 mA
товар відсутній
BFG21W,115 BFG21W,115 NXP USA Inc. BFG21W.pdf Description: RF TRANS NPN 4.5V 18GHZ CMPAK-4
товар відсутній
BFG325/XR,215 BFG325/XR,215 NXP USA Inc. BFG325_XR.pdf Description: RF TRANS NPN 6V 14GHZ SOT143R
товар відсутній
BFG325W/XR,115 BFG325W/XR,115 NXP USA Inc. BFG325W_XR.pdf Description: RF TRANS NPN 6V 14GHZ CMPAK-4
товар відсутній
BFG403W,115 BFG403W,115 NXP USA Inc. BFG403W.pdf Description: RF TRANS NPN 4.5V 17GHZ CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB ~ 22dB
Power - Max: 16mW
Current - Collector (Ic) (Max): 3.6mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3mA, 2V
Frequency - Transition: 17GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2GHz
Supplier Device Package: CMPAK-4
товар відсутній
BFG424F,115 BFG424F,115 NXP USA Inc. BFG424F_Rev2.pdf Description: RF TRANS NPN 4.5V 25GHZ 4SO
Packaging: Tape & Reel (TR)
Package / Case: SOT-343 Reverse Pinning
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 135mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Supplier Device Package: 4-SO
Part Status: Obsolete
товар відсутній
BFG480W,115 BFG480W,115 NXP USA Inc. BFG480W_Rev_Oct2010.pdf description Description: RF TRANS NPN 4.5V 21GHZ CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 360mW
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 80mA, 2V
Frequency - Transition: 21GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Supplier Device Package: CMPAK-4
Part Status: Obsolete
товар відсутній
BFG540/X,215 BFG540/X,215 NXP USA Inc. BFG540_X_XR_Rev5.pdf Description: RF TRANS NPN 15V 9GHZ SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
товар відсутній
BFG541,115 BFG541,115 NXP USA Inc. BFG541_Rev_Oct2010.pdf Description: RF TRANS NPN 15V 9GHZ SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 650mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: SC-73
Part Status: Obsolete
товар відсутній
BFG591,115 BFG591,115 NXP USA Inc. BFG591_Rev_Oct2010.pdf Description: RF TRANS NPN 15V 7GHZ SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Frequency - Transition: 7GHz
Supplier Device Package: SC-73
Part Status: Obsolete
товар відсутній
BFG97,115 BFG97,115 NXP USA Inc. BFG97_Rev_Oct2010.pdf Description: RF TRANS NPN 15V 5.5GHZ SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V
Frequency - Transition: 5.5GHz
Supplier Device Package: SC-73
Part Status: Obsolete
товар відсутній
BFR106,215 BFR106,215 NXP USA Inc. BFR106_Rev_Feb2011.pdf Description: RF TRANS NPN 15V 5GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 9V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
товар відсутній
BFR505,215 BFR505,215 NXP USA Inc. BFR505_Rev4.pdf Description: RF TRANS NPN 15V 9GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 18mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-23 (TO-236AB)
товар відсутній
BFR92AW,115 BFR92AW,115 NXP USA Inc. BFR92AW_Rev3.pdf Description: RF TRANS NPN 15V 5GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
товар відсутній
BFS17W,115 BFS17W,115 NXP USA Inc. BFS17W_Rev_Oct2010.pdf Description: RF TRANS NPN 15V 1.6GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
Frequency - Transition: 1.6GHz
Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
Supplier Device Package: SC-70
Part Status: Obsolete
товар відсутній
BFS505,115 BFS505,115 NXP USA Inc. BFS505_Rev_Oct2010.pdf Description: RF TRANS NPN 15V 9GHZ SOT323-3
товар відсутній
BFT25A,215 BFT25A,215 NXP USA Inc. BFT25A.pdf Description: RF TRANS NPN 5V 5GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 32mW
Current - Collector (Ic) (Max): 6.5mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
товар відсутній
BFT93,215 BFT93,215 NXP USA Inc. BFT93_CNV.pdf Description: RF TRANS PNP 12V 5GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2.4dB @ 500MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
товар відсутній
BAP1321-02,115 BAP1321-02,115 NXP USA Inc. BAP1321-02_Rev_02_2008.pdf Description: RF DIODE PIN 60V 715MW SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.32pF @ 20V, 1MHz
Resistance @ If, F: 1.3Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 60V
Supplier Device Package: SOD-523
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 715 mW
товар відсутній
BAP50-03,115 BAP50-03,115 NXP USA Inc. BAP50-03.pdf Description: RF DIODE PIN 50V 500MW SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
Resistance @ If, F: 5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SOD-323
Current - Max: 50 mA
Power Dissipation (Max): 500 mW
товар відсутній
BAP50-04W,115 BAP50-04W,115 NXP USA Inc. BAP50-04W.pdf Description: RF DIODE PIN 50V 240MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 5V, 1MHz
Resistance @ If, F: 5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SC-70
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 240 mW
товар відсутній
BAP50-05,215 BAP50-05,215 NXP USA Inc. BAP50-05.pdf Description: RF DIODE PIN 50V 250MW TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 5V, 1MHz
Resistance @ If, F: 5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SOT-23 (TO-236AB)
Current - Max: 50 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAP51-02,115 BAP51-02,115 NXP USA Inc. BAP51-02.pdf Description: RF DIODE PIN 60V 715MW SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 60V
Supplier Device Package: SOD-523
Part Status: Active
Current - Max: 50 mA
Power Dissipation (Max): 715 mW
на замовлення 6495 шт:
термін постачання 21-31 дні (днів)
10+29.93 грн
13+ 21.41 грн
25+ 19.33 грн
100+ 12.53 грн
250+ 10.55 грн
500+ 8.57 грн
1000+ 6.49 грн
Мінімальне замовлення: 10
BAP51-03,115 BAP51-03,115 NXP USA Inc. BAP51-03.pdf Description: RF DIODE PIN 50V 500MW SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SOD-323
Part Status: Active
Current - Max: 50 mA
Power Dissipation (Max): 500 mW
на замовлення 9401 шт:
термін постачання 21-31 дні (днів)
12+24.94 грн
15+ 19.42 грн
25+ 17.71 грн
100+ 12.38 грн
250+ 11.22 грн
500+ 9.28 грн
1000+ 6.85 грн
Мінімальне замовлення: 12
BAP63-02,115 BAP63-02,115 NXP USA Inc. BAP63-02_Rev4.pdf Description: RF DIODE PIN 50V 715MW SOD523
товар відсутній
BAP63-03,115 BAP63-03,115 NXP USA Inc. BAP63-03_Rev_Oct2010.pdf Description: RF DIODE PIN 50V 500MW SOD323
товар відсутній
BAP63-05W,115 BAP63-05W,115 NXP USA Inc. BAP63-05W_Rev_Oct2010.pdf Description: RF DIODE PIN 50V 240MW SOT323
товар відсутній
BAP64-05,215 BAP64-05.pdf
BAP64-05,215
Виробник: NXP USA Inc.
Description: RF DIODE PIN 175V 250MW TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 175V
Supplier Device Package: SOT-23 (TO-236AB)
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAP64-06,215 BAP64-06.pdf
BAP64-06,215
Виробник: NXP USA Inc.
Description: RF DIODE PIN 175V 250MW TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 175V
Supplier Device Package: SOT-23 (TO-236AB)
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAP64-06W,115 BAP64-06W.pdf
BAP64-06W,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 100V 240MW SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: SC-70
Current - Max: 100 mA
Power Dissipation (Max): 240 mW
товар відсутній
BAP65-02,115 BAP65-02.pdf
BAP65-02,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 30V 715MW SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.375pF @ 20V, 1MHz
Resistance @ If, F: 350mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SOD-523
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 715 mW
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.76 грн
6000+ 8.79 грн
15000+ 8.18 грн
Мінімальне замовлення: 3000
BAP65-03,115 BAP65-03.pdf
BAP65-03,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 30V 500MW SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.375pF @ 20V, 1MHz
Resistance @ If, F: 350mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SOD-323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 500 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.65 грн
Мінімальне замовлення: 3000
BAP65-05W,115 BAP65-05W.pdf
BAP65-05W,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 30V 240MW SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.425pF @ 20V, 1MHz
Resistance @ If, F: 350mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SC-70
Current - Max: 100 mA
Power Dissipation (Max): 240 mW
товар відсутній
BAP70-02,115 BAP70-02.pdf
BAP70-02,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 50V 415MW SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.25pF @ 20V, 1MHz
Resistance @ If, F: 1.9Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SOD-523
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 415 mW
товар відсутній
BAP70-03,115 BAP70-03.pdf
BAP70-03,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 50V 500MW SOD323
товар відсутній
BAT18,215 BAT18.pdf
BAT18,215
Виробник: NXP USA Inc.
Description: RF DIODE STANDARD 35V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Standard - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Current - Max: 100 mA
товар відсутній
BB178,115 BB178_Rev3.pdf
BB178,115
Виробник: NXP USA Inc.
Description: DIODE VHF VAR CAP 32V SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2.754pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOD-523
Part Status: Obsolete
Voltage - Peak Reverse (Max): 32 V
Capacitance Ratio: 15
товар відсутній
BB179,115 BB179_Rev3.pdf
BB179,115
Виробник: NXP USA Inc.
Description: DIODE UHF VAR CAP 30V SOD523
товар відсутній
BB179B,115 BB179B_Rev3.pdf
BB179B,115
Виробник: NXP USA Inc.
Description: DIODE UHF VAR CAP 32V SOD523
товар відсутній
BB181,115 BB181.pdf
BB181,115
Виробник: NXP USA Inc.
Description: DIODE VHF VAR CAP 30V SOD523
товар відсутній
BB201,215 BB201.pdf
BB201,215
Виробник: NXP USA Inc.
Description: DIODE VAR CAP DUAL 15V SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 25.5pF @ 8V, 1MHz
Capacitance Ratio Condition: C1/C7.5
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Active
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 3.8
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+19.14 грн
6000+ 17.46 грн
9000+ 16.17 грн
30000+ 15.02 грн
Мінімальне замовлення: 3000
BB202,115 BB202_N.pdf
BB202,115
Виробник: NXP USA Inc.
Description: DIODE VAR CAP 6V SOD-523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 85°C (TJ)
Capacitance @ Vr, F: 11.2pF @ 2.3V, 1MHz
Capacitance Ratio Condition: C0.2/C2.3
Supplier Device Package: SOD-523
Part Status: Active
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.5
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+19.56 грн
Мінімальне замовлення: 3000
BB207,215 BB207.pdf
BB207,215
Виробник: NXP USA Inc.
Description: DIODE FM VAR CAP 15V SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 26.3pF @ 8V, 1MHz
Capacitance Ratio Condition: C1/C7.5
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Active
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 3.3
товар відсутній
BB208-03,115 BB208-02_BB208-03.pdf
BB208-03,115
Виробник: NXP USA Inc.
Description: DIODE VAR CAP 10V SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 5.4pF @ 7.5V, 1MHz
Capacitance Ratio Condition: C1/C7.5
Supplier Device Package: SOD-323
Part Status: Obsolete
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 5.2
товар відсутній
BBY31,215 DS_568_BBY31.pdf
BBY31,215
Виробник: NXP USA Inc.
Description: DIODE UHF VAR CAP 30V SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 8.3
товар відсутній
BBY40,215 BBY40.pdf
BBY40,215
Виробник: NXP USA Inc.
Description: DIODE VHF VAR CAP 30V SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 6pF @ 25V, 1MHz
Capacitance Ratio Condition: C3/C25
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 6.5
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+10.09 грн
Мінімальне замовлення: 3000
BF1211,215 BF1211%28R%2CWR%29.pdf
BF1211,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 29dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 15 mA
товар відсутній
BF1211R,215 BF1211%28R%2CWR%29.pdf
BF1211R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 29dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 15 mA
товар відсутній
BF1211WR,115 BF1211(R,WR).pdf
BF1211WR,115
Виробник: NXP USA Inc.
Description: MOSFET N-CH DUAL GATE 6V SOT343R
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 29dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 15 mA
товар відсутній
BF1212,215 BF1212_R_WR_Rev_Oct2010.pdf
BF1212,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 12 mA
товар відсутній
BF1212R,215 BF1212_R_WR_Rev_Oct2010.pdf
BF1212R,215
Виробник: NXP USA Inc.
Description: RF MOSFET 5V SOT143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 12 mA
товар відсутній
BF1212WR,115 BF1212_R_WR_Rev_Oct2010.pdf
BF1212WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 5V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Gain: 30dB
Technology: MOSFET
Noise Figure: 0.9dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 6 V
Voltage - Test: 5 V
Current - Test: 12 mA
товар відсутній
BF511,215 BF510_511_512_513_CNV.pdf
BF511,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 5 mA
товар відсутній
BF545C,215 BF545A%2CB%2CC.pdf
BF545C,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 30 V
товар відсутній
BF861B,215 BF861A_BF861B_BF861C.pdf
BF861B,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 15mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 25 V
товар відсутній
BF862,215 BF862.pdf
BF862,215
Виробник: NXP USA Inc.
Description: RF MOSFET JFET SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Voltage - Rated: 20 V
товар відсутній
BF908WR,115 BF908WR_Rev_Oct2010.pdf
BF908WR,115
Виробник: NXP USA Inc.
Description: RF MOSFET 8V CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: CMPAK-4
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 15 mA
товар відсутній
BF991,215 BF991_Rev3.pdf
BF991,215
Виробник: NXP USA Inc.
Description: RF MOSFET 10V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 20mA
Mounting Type: Surface Mount
Frequency: 100MHz
Configuration: N-Channel Dual Gate
Gain: 29dB
Technology: MOSFET
Noise Figure: 0.7dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 10 mA
товар відсутній
BF992,215 BF992.pdf
BF992,215
Виробник: NXP USA Inc.
Description: RF MOSFET 10V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.2dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 15 mA
товар відсутній
BF994S,215 BF994S.pdf
BF994S,215
Виробник: NXP USA Inc.
Description: RF MOSFET 15V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Gain: 25dB
Technology: MOSFET
Noise Figure: 1dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 15 V
Current - Test: 10 mA
товар відсутній
BF998,215 BF998%28R%29_Rev_Oct2010.pdf
BF998,215
Виробник: NXP USA Inc.
Description: RF MOSFET 8V SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 200MHz
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.6dB
Supplier Device Package: SOT-143B
Part Status: Obsolete
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 10 mA
товар відсутній
BFG21W,115 BFG21W.pdf
BFG21W,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 4.5V 18GHZ CMPAK-4
товар відсутній
BFG325/XR,215 BFG325_XR.pdf
BFG325/XR,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 6V 14GHZ SOT143R
товар відсутній
BFG325W/XR,115 BFG325W_XR.pdf
BFG325W/XR,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 6V 14GHZ CMPAK-4
товар відсутній
BFG403W,115 BFG403W.pdf
BFG403W,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 4.5V 17GHZ CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB ~ 22dB
Power - Max: 16mW
Current - Collector (Ic) (Max): 3.6mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3mA, 2V
Frequency - Transition: 17GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2GHz
Supplier Device Package: CMPAK-4
товар відсутній
BFG424F,115 BFG424F_Rev2.pdf
BFG424F,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 4.5V 25GHZ 4SO
Packaging: Tape & Reel (TR)
Package / Case: SOT-343 Reverse Pinning
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 135mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Supplier Device Package: 4-SO
Part Status: Obsolete
товар відсутній
BFG480W,115 description BFG480W_Rev_Oct2010.pdf
BFG480W,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 4.5V 21GHZ CMPAK-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 360mW
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 80mA, 2V
Frequency - Transition: 21GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz
Supplier Device Package: CMPAK-4
Part Status: Obsolete
товар відсутній
BFG540/X,215 BFG540_X_XR_Rev5.pdf
BFG540/X,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: SOT-143B
Part Status: Obsolete
товар відсутній
BFG541,115 BFG541_Rev_Oct2010.pdf
BFG541,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 650mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Supplier Device Package: SC-73
Part Status: Obsolete
товар відсутній
BFG591,115 BFG591_Rev_Oct2010.pdf
BFG591,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 7GHZ SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Frequency - Transition: 7GHz
Supplier Device Package: SC-73
Part Status: Obsolete
товар відсутній
BFG97,115 BFG97_Rev_Oct2010.pdf
BFG97,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 5.5GHZ SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V
Frequency - Transition: 5.5GHz
Supplier Device Package: SC-73
Part Status: Obsolete
товар відсутній
BFR106,215 BFR106_Rev_Feb2011.pdf
BFR106,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 5GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 9V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
товар відсутній
BFR505,215 BFR505_Rev4.pdf
BFR505,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 18mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Supplier Device Package: SOT-23 (TO-236AB)
товар відсутній
BFR92AW,115 BFR92AW_Rev3.pdf
BFR92AW,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 5GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device Package: SC-70
Part Status: Obsolete
товар відсутній
BFS17W,115 BFS17W_Rev_Oct2010.pdf
BFS17W,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 1.6GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
Frequency - Transition: 1.6GHz
Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
Supplier Device Package: SC-70
Part Status: Obsolete
товар відсутній
BFS505,115 BFS505_Rev_Oct2010.pdf
BFS505,115
Виробник: NXP USA Inc.
Description: RF TRANS NPN 15V 9GHZ SOT323-3
товар відсутній
BFT25A,215 BFT25A.pdf
BFT25A,215
Виробник: NXP USA Inc.
Description: RF TRANS NPN 5V 5GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 32mW
Current - Collector (Ic) (Max): 6.5mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
товар відсутній
BFT93,215 BFT93_CNV.pdf
BFT93,215
Виробник: NXP USA Inc.
Description: RF TRANS PNP 12V 5GHZ TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2.4dB @ 500MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
товар відсутній
BAP1321-02,115 BAP1321-02_Rev_02_2008.pdf
BAP1321-02,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 60V 715MW SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.32pF @ 20V, 1MHz
Resistance @ If, F: 1.3Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 60V
Supplier Device Package: SOD-523
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 715 mW
товар відсутній
BAP50-03,115 BAP50-03.pdf
BAP50-03,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 50V 500MW SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
Resistance @ If, F: 5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SOD-323
Current - Max: 50 mA
Power Dissipation (Max): 500 mW
товар відсутній
BAP50-04W,115 BAP50-04W.pdf
BAP50-04W,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 50V 240MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 5V, 1MHz
Resistance @ If, F: 5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SC-70
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 240 mW
товар відсутній
BAP50-05,215 BAP50-05.pdf
BAP50-05,215
Виробник: NXP USA Inc.
Description: RF DIODE PIN 50V 250MW TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 5V, 1MHz
Resistance @ If, F: 5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SOT-23 (TO-236AB)
Current - Max: 50 mA
Power Dissipation (Max): 250 mW
товар відсутній
BAP51-02,115 BAP51-02.pdf
BAP51-02,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 60V 715MW SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 60V
Supplier Device Package: SOD-523
Part Status: Active
Current - Max: 50 mA
Power Dissipation (Max): 715 mW
на замовлення 6495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+29.93 грн
13+ 21.41 грн
25+ 19.33 грн
100+ 12.53 грн
250+ 10.55 грн
500+ 8.57 грн
1000+ 6.49 грн
Мінімальне замовлення: 10
BAP51-03,115 BAP51-03.pdf
BAP51-03,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 50V 500MW SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SOD-323
Part Status: Active
Current - Max: 50 mA
Power Dissipation (Max): 500 mW
на замовлення 9401 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+24.94 грн
15+ 19.42 грн
25+ 17.71 грн
100+ 12.38 грн
250+ 11.22 грн
500+ 9.28 грн
1000+ 6.85 грн
Мінімальне замовлення: 12
BAP63-02,115 BAP63-02_Rev4.pdf
BAP63-02,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 50V 715MW SOD523
товар відсутній
BAP63-03,115 BAP63-03_Rev_Oct2010.pdf
BAP63-03,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 50V 500MW SOD323
товар відсутній
BAP63-05W,115 BAP63-05W_Rev_Oct2010.pdf
BAP63-05W,115
Виробник: NXP USA Inc.
Description: RF DIODE PIN 50V 240MW SOT323
товар відсутній
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