Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FCP260N60E | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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MARS1-AR0231AT7CS-GEVB | onsemi |
Description: EVAL BOARD IMAGE SENSOR Packaging: Box Sensor Type: Image Sensor Utilized IC / Part: AR0231AT Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FOD3150S | onsemi |
![]() Packaging: Tube Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 1.5A Technology: Optical Coupling Current - Output High, Low: 1A, 1A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 300ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 991 шт: термін постачання 21-31 дні (днів) |
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FOD3150V | onsemi |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 1.5A Technology: Optical Coupling Current - Output High, Low: 1A, 1A Voltage - Isolation: 5000Vrms Approval Agency: IEC, UL Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 300ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 729 шт: термін постачання 21-31 дні (днів) |
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MURA215T3G | onsemi |
![]() Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 150 V |
на замовлення 158121 шт: термін постачання 21-31 дні (днів) |
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BZX85C3V9 | onsemi |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV8664CDT50RKG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 29 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: DPAK Voltage - Output (Min/Fixed): 5V PSRR: 67dB (100Hz) Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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NCV8664CDT50RKG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 29 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: DPAK Voltage - Output (Min/Fixed): 5V PSRR: 67dB (100Hz) Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 23568 шт: термін постачання 21-31 дні (днів) |
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SECO-HVDCDC1362-40W15V-GEVB | onsemi |
![]() Packaging: Box Voltage - Output: 15V Voltage - Input: 240V ~ 900V Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: NCV1362, NCP1362 Supplied Contents: Board(s) Main Purpose: DC/DC Converter Outputs and Type: 1, Isolated Power - Output: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS5H600NLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 3.3W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NTMFS5H600NLT1G-IRH1 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 3.3W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS5H600NLT1G-IRH1 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 3.3W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V |
на замовлення 1498 шт: термін постачання 21-31 дні (днів) |
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NTMFS5H600NLT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 3.3W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NTMFS5H600NLT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 3.3W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H852NLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H852NLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1559 шт: термін постачання 21-31 дні (днів) |
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NTMFS6H801NLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V |
на замовлення 44138 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C406NLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 179W (Tc) Vgs(th) (Max) @ Id: 2V @ 280µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS5C406NLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 179W (Tc) Vgs(th) (Max) @ Id: 2V @ 280µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V |
на замовлення 1399 шт: термін постачання 21-31 дні (днів) |
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NTMFS5H400NLT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc) Power Dissipation (Max): 3.3W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NTMFS5H400NLT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc) Power Dissipation (Max): 3.3W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V |
на замовлення 11845 шт: термін постачання 21-31 дні (днів) |
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NTMFS5H409NLT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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NTMFS5H409NLT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V |
на замовлення 49829 шт: термін постачання 21-31 дні (днів) |
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NTMFS5H431NLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 66W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 20 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NTMFS5H431NLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 66W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 20 V |
на замовлення 1867 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C645NLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C645NLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
на замовлення 1644 шт: термін постачання 21-31 дні (днів) |
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NTMFS6H864NLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V |
на замовлення 1495 шт: термін постачання 21-31 дні (днів) |
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NTMFS6H818NLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 190µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NTMFS6H818NLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 190µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V |
на замовлення 30950 шт: термін постачання 21-31 дні (днів) |
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NTMFS6H818NT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 190µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS6H818NT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 190µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS6H858NT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS6H858NT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS6H852NLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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NTMFS6H852NLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V |
на замовлення 66401 шт: термін постачання 21-31 дні (днів) |
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NTMFS6H852NT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NTMFS6H852NT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NTMFS6H848NLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS6H848NLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS6H800NLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 2V @ 330µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTMFS6H800NLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 2V @ 330µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V |
на замовлення 4421 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C3V9ET3G | onsemi |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C3V9ET3G | onsemi |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C3V9LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C3V9LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 14353 шт: термін постачання 21-31 дні (днів) |
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FSA9280AUMX | onsemi |
![]() Packaging: Tape & Reel (TR) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT25AM02C8CTR | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.6V ~ 3.6V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-WLCSP (3.12x2.04) Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT25AM02C8CTR | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.6V ~ 3.6V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-WLCSP (3.12x2.04) Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT25AM02C8ATR | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.6V ~ 3.6V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-WLCSP (3.12x2.04) Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT25AM02C8ATR | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.6V ~ 3.6V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-WLCSP (3.12x2.04) Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC33174P | onsemi |
![]() Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 180µA (x4 Channels) Slew Rate: 2.1V/µs Gain Bandwidth Product: 1.8 MHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-PDIP Number of Circuits: 4 Current - Output / Channel: 27 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 44 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC33174VDR2 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 180µA (x4 Channels) Slew Rate: 2.1V/µs Gain Bandwidth Product: 1.8 MHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SOIC Number of Circuits: 4 Current - Output / Channel: 27 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 44 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC33174VDG | onsemi |
![]() Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 180µA (x4 Channels) Slew Rate: 2.1V/µs Gain Bandwidth Product: 1.8 MHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SOIC Number of Circuits: 4 Current - Output / Channel: 27 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 44 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS8350LET40 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V Power Dissipation (Max): 3.33W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS8350LET40 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V Power Dissipation (Max): 3.33W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V |
на замовлення 1098 шт: термін постачання 21-31 дні (днів) |
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MOC3012SM | onsemi |
![]() Packaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 100µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 5mA Number of Channels: 1 Voltage - Off State: 250 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 1936 шт: термін постачання 21-31 дні (днів) |
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MOC3012TVM | onsemi |
![]() Packaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 4170Vrms Approval Agency: IEC/EN/DIN, UL Current - Hold (Ih): 100µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 5mA Number of Channels: 1 Voltage - Off State: 250 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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BZX85C5V6-T50R | onsemi |
![]() Packaging: Bulk Tolerance: ±7% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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74ABT16543CSSC | onsemi |
![]() Packaging: Tube Package / Case: 56-BSSOP (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 32mA, 64mA Supplier Device Package: 56-SSOP |
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FCP260N60E |
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Виробник: onsemi
Description: MOSFET N-CH 600V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 600V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 277.12 грн |
50+ | 136.27 грн |
100+ | 123.65 грн |
MARS1-AR0231AT7CS-GEVB |
Виробник: onsemi
Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Utilized IC / Part: AR0231AT
Supplied Contents: Board(s)
Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Utilized IC / Part: AR0231AT
Supplied Contents: Board(s)
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FOD3150S |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 991 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 177.76 грн |
50+ | 88.73 грн |
100+ | 81.56 грн |
500+ | 65.26 грн |
FOD3150V |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC, UL
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC, UL
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 729 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 121.10 грн |
10+ | 83.79 грн |
100+ | 64.10 грн |
500+ | 52.00 грн |
MURA215T3G |
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Виробник: onsemi
Description: DIODE GEN PURP 150V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Description: DIODE GEN PURP 150V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
на замовлення 158121 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2435+ | 8.82 грн |
BZX85C3V9 |
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Виробник: onsemi
Description: DIODE ZENER 3.9V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 3.9V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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NCV8664CDT50RKG |
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Виробник: onsemi
Description: IC REG LINEAR 5V 150MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 29 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 67dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 150MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 29 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 67dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 39.40 грн |
5000+ | 36.52 грн |
12500+ | 35.38 грн |
NCV8664CDT50RKG |
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Виробник: onsemi
Description: IC REG LINEAR 5V 150MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 29 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 67dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 150MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 29 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 67dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 23568 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 97.81 грн |
10+ | 84.09 грн |
25+ | 79.86 грн |
100+ | 57.57 грн |
250+ | 50.87 грн |
500+ | 48.19 грн |
1000+ | 36.87 грн |
SECO-HVDCDC1362-40W15V-GEVB |
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Виробник: onsemi
Description: EVAL BOARD FOR HVDCDC3064
Packaging: Box
Voltage - Output: 15V
Voltage - Input: 240V ~ 900V
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCV1362, NCP1362
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Power - Output: 40 W
Description: EVAL BOARD FOR HVDCDC3064
Packaging: Box
Voltage - Output: 15V
Voltage - Input: 240V ~ 900V
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCV1362, NCP1362
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Power - Output: 40 W
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NTMFS5H600NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 92.76 грн |
NTMFS5H600NLT1G-IRH1 |
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Виробник: onsemi
Description: T8 60V LOW COSS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Description: T8 60V LOW COSS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
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NTMFS5H600NLT1G-IRH1 |
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Виробник: onsemi
Description: T8 60V LOW COSS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Description: T8 60V LOW COSS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
на замовлення 1498 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 270.14 грн |
10+ | 170.21 грн |
100+ | 119.47 грн |
500+ | 91.76 грн |
NTMFS5H600NLT3G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 93.12 грн |
NTMFS5H600NLT3G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 270.14 грн |
10+ | 170.21 грн |
100+ | 119.47 грн |
500+ | 91.76 грн |
1000+ | 85.22 грн |
2000+ | 84.15 грн |
NVMFS6H852NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 27.15 грн |
NVMFS6H852NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1559 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 97.03 грн |
10+ | 58.60 грн |
100+ | 38.80 грн |
500+ | 28.42 грн |
NTMFS6H801NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
на замовлення 44138 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 210.36 грн |
10+ | 131.56 грн |
100+ | 91.11 грн |
500+ | 69.23 грн |
NTMFS5C406NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 53A/362A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
Description: MOSFET N-CH 40V 53A/362A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
NTMFS5C406NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 53A/362A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
Description: MOSFET N-CH 40V 53A/362A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
на замовлення 1399 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 255.39 грн |
10+ | 161.24 грн |
100+ | 112.77 грн |
500+ | 86.41 грн |
NTMFS5H400NLT3G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 46A/330A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc)
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Description: MOSFET N-CH 40V 46A/330A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc)
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 97.06 грн |
NTMFS5H400NLT3G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 46A/330A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc)
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Description: MOSFET N-CH 40V 46A/330A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 330A (Tc)
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
на замовлення 11845 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 294.20 грн |
10+ | 182.76 грн |
25+ | 156.47 грн |
100+ | 118.93 грн |
250+ | 105.21 грн |
500+ | 96.77 грн |
1000+ | 88.24 грн |
2500+ | 86.27 грн |
NTMFS5H409NLT3G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 70.35 грн |
NTMFS5H409NLT3G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
Description: MOSFET N-CH 40V 41A/270A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
на замовлення 49829 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 234.43 грн |
10+ | 143.52 грн |
25+ | 122.17 грн |
100+ | 91.96 грн |
250+ | 80.82 грн |
500+ | 73.97 грн |
1000+ | 67.11 грн |
2500+ | 62.53 грн |
NTMFS5H431NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 23A/106A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 20 V
Description: MOSFET N-CH 40V 23A/106A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 20 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 29.86 грн |
NTMFS5H431NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 23A/106A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 20 V
Description: MOSFET N-CH 40V 23A/106A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 20 V
на замовлення 1867 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 86.94 грн |
10+ | 58.53 грн |
100+ | 42.30 грн |
500+ | 33.02 грн |
NTMFS5C645NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 22A/100A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Description: MOSFET N-CH 60V 22A/100A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 82.86 грн |
NTMFS5C645NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 22A/100A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Description: MOSFET N-CH 60V 22A/100A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
на замовлення 1644 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 247.62 грн |
10+ | 155.63 грн |
100+ | 108.64 грн |
500+ | 83.12 грн |
NTMFS6H864NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 65.20 грн |
10+ | 54.57 грн |
100+ | 37.76 грн |
500+ | 29.60 грн |
NTMFS6H818NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 54.99 грн |
3000+ | 51.95 грн |
NTMFS6H818NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
на замовлення 30950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 150.59 грн |
10+ | 99.12 грн |
100+ | 70.32 грн |
500+ | 56.25 грн |
NTMFS6H818NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 20A/123A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
Description: MOSFET N-CH 80V 20A/123A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
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од. на суму грн.
NTMFS6H818NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 20A/123A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
Description: MOSFET N-CH 80V 20A/123A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
NTMFS6H858NT1G |
![]() |
Виробник: onsemi
Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
NTMFS6H858NT1G |
![]() |
Виробник: onsemi
Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
NTMFS6H852NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 25.62 грн |
3000+ | 22.69 грн |
4500+ | 21.67 грн |
7500+ | 19.27 грн |
10500+ | 18.96 грн |
NTMFS6H852NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
на замовлення 66401 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 91.60 грн |
10+ | 55.69 грн |
100+ | 36.75 грн |
500+ | 26.86 грн |
NTMFS6H852NT1G |
![]() |
Виробник: onsemi
Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 28.74 грн |
NTMFS6H852NT1G |
![]() |
Виробник: onsemi
Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 65.20 грн |
10+ | 51.50 грн |
100+ | 40.08 грн |
500+ | 31.88 грн |
NTMFS6H848NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
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NTMFS6H848NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
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NTMFS6H800NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 30A/224A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Description: MOSFET N-CH 80V 30A/224A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 91.96 грн |
NTMFS6H800NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 30A/224A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Description: MOSFET N-CH 80V 30A/224A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
на замовлення 4421 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 269.36 грн |
10+ | 170.13 грн |
100+ | 115.32 грн |
500+ | 91.30 грн |
SZBZX84C3V9ET3G |
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Виробник: onsemi
Description: DIODE ZENER 3.9V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10000+ | 1.72 грн |
SZBZX84C3V9ET3G |
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Виробник: onsemi
Description: DIODE ZENER 3.9V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
31+ | 10.09 грн |
69+ | 4.34 грн |
118+ | 2.55 грн |
500+ | 2.33 грн |
1000+ | 2.26 грн |
SZBZX84C3V9LT1G |
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Виробник: onsemi
Description: DIODE ZENER 3.9V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.58 грн |
6000+ | 1.31 грн |
9000+ | 1.10 грн |
SZBZX84C3V9LT1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 3.9V 250MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.9V 250MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
на замовлення 14353 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
37+ | 8.54 грн |
62+ | 4.86 грн |
128+ | 2.35 грн |
500+ | 2.14 грн |
1000+ | 2.01 грн |
FSA9280AUMX |
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Виробник: onsemi
Description: IC USB MULTIMEDIA SWITCH 20-UMLP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Description: IC USB MULTIMEDIA SWITCH 20-UMLP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
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CAT25AM02C8CTR |
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Виробник: onsemi
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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CAT25AM02C8CTR |
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Виробник: onsemi
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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CAT25AM02C8ATR |
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Виробник: onsemi
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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CAT25AM02C8ATR |
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Виробник: onsemi
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2MBIT SPI 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP (3.12x2.04)
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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MC33174P |
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Виробник: onsemi
Description: IC OPAMP QUAD LOW POWER 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 180µA (x4 Channels)
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.8 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-PDIP
Number of Circuits: 4
Current - Output / Channel: 27 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
Description: IC OPAMP QUAD LOW POWER 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 180µA (x4 Channels)
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.8 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-PDIP
Number of Circuits: 4
Current - Output / Channel: 27 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
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MC33174VDR2 |
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Виробник: onsemi
Description: IC OPAMP QUAD LOW POWER 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 180µA (x4 Channels)
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.8 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOIC
Number of Circuits: 4
Current - Output / Channel: 27 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
Description: IC OPAMP QUAD LOW POWER 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 180µA (x4 Channels)
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.8 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOIC
Number of Circuits: 4
Current - Output / Channel: 27 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
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MC33174VDG |
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Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 180µA (x4 Channels)
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.8 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOIC
Number of Circuits: 4
Current - Output / Channel: 27 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
Description: IC OPAMP GP 4 CIRCUIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 180µA (x4 Channels)
Slew Rate: 2.1V/µs
Gain Bandwidth Product: 1.8 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOIC
Number of Circuits: 4
Current - Output / Channel: 27 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 44 V
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FDMS8350LET40 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 49A/300A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 3.33W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V
Description: MOSFET N-CH 40V 49A/300A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 3.33W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V
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FDMS8350LET40 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 49A/300A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 3.33W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V
Description: MOSFET N-CH 40V 49A/300A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
Power Dissipation (Max): 3.33W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16590 pF @ 20 V
на замовлення 1098 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 401.32 грн |
10+ | 257.89 грн |
100+ | 184.92 грн |
500+ | 144.37 грн |
1000+ | 141.93 грн |
MOC3012SM |
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Виробник: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 1936 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 67.53 грн |
50+ | 29.50 грн |
100+ | 26.46 грн |
500+ | 20.04 грн |
1000+ | 18.57 грн |
MOC3012TVM |
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Виробник: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 4.17KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 57.44 грн |
10+ | 33.71 грн |
100+ | 22.70 грн |
500+ | 17.25 грн |
1000+ | 16.01 грн |
BZX85C5V6-T50R |
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Виробник: onsemi
Description: DIODE ZENER 5.6V 1W DO41
Packaging: Bulk
Tolerance: ±7%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 1W DO41
Packaging: Bulk
Tolerance: ±7%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6299+ | 3.41 грн |
74ABT16543CSSC |
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Виробник: onsemi
Description: IC TXRX NON-INVERT 5.5V 56SSOP
Packaging: Tube
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-SSOP
Description: IC TXRX NON-INVERT 5.5V 56SSOP
Packaging: Tube
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-SSOP
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