| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SS26 | ONSEMI |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape; 1.3W Mounting: SMD Max. forward voltage: 0.7V Power dissipation: 1.3W Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 60V Kind of package: reel; tape Case: SMB Type of diode: Schottky rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDB120N10 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Pulsed drain current: 296A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
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| FDP120N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 296A; 170W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 74A Pulsed drain current: 296A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement |
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MM3Z18VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SZMM3Z18VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NV25512MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 10MHz Operating temperature: -40...125°C Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: uDFN8 Access time: 45ns Operating voltage: 1.8...5.5V Memory: 512kb EEPROM Clock frequency: 10MHz Interface: SPI Memory organisation: 64kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CAT25512YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz Operating temperature: -40...85°C Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: TSSOP8 Access time: 40ns Operating voltage: 1.8...5.5V Memory: 512kb EEPROM Clock frequency: 20MHz Interface: SPI Memory organisation: 64kx8bit |
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В кошику од. на суму грн. | |||||||||||||||
| CAT25512HU5I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz Operating temperature: -40...85°C Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: uDFN8 Access time: 40ns Operating voltage: 1.8...5.5V Memory: 512kb EEPROM Clock frequency: 20MHz Interface: SPI Memory organisation: 64kx8bit |
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В кошику од. на суму грн. | |||||||||||||||
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CAT25512VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; SO8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of interface: serial Case: SO8 Operating voltage: 1.8...5.5V Memory: 512kb EEPROM Interface: SPI Memory organisation: 64kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CAV25512VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz Operating temperature: -40...125°C Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: SOIC8 Access time: 40ns Operating voltage: 2.5...5.5V Memory: 512kb EEPROM Clock frequency: 10MHz Interface: SPI Memory organisation: 64kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CAV25512YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz Operating temperature: -40...125°C Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: TSSOP8 Access time: 40ns Operating voltage: 2.5...5.5V Memory: 512kb EEPROM Clock frequency: 10MHz Interface: SPI Memory organisation: 64kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NTB011N15MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W Mounting: SMD On-state resistance: 10.9mΩ Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 75.4A Power dissipation: 136.4W Pulsed drain current: 323A Case: D2PAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 37nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NVVR26A120M1WST | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDA; screw,THT Case: AHPM5-CDA Topology: MOSFET half-bridge Kind of package: tube Type of semiconductor module: MOSFET transistor Electrical mounting: screw; THT Technology: SiC Semiconductor structure: transistor/transistor Gate-source voltage: -10...25V On-state resistance: 4.6mΩ Drain current: 400A Power dissipation: 1kW Drain-source voltage: 1.2kV |
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В кошику од. на суму грн. | |||||||||||||||
| NVVR26A120M1WSB | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDE; screw,THT Case: AHPM5-CDE Topology: MOSFET half-bridge Kind of package: tube Type of semiconductor module: MOSFET transistor Electrical mounting: screw; THT Technology: SiC Semiconductor structure: transistor/transistor Gate-source voltage: -10...25V On-state resistance: 4.6mΩ Drain current: 400A Power dissipation: 1kW Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NVVR26A120M1WSS | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDI; screw,THT Case: AHPM5-CDI Topology: MOSFET half-bridge Kind of package: tube Type of semiconductor module: MOSFET transistor Electrical mounting: screw; THT Technology: SiC Semiconductor structure: transistor/transistor Gate-source voltage: -10...25V On-state resistance: 4.6mΩ Drain current: 400A Power dissipation: 1kW Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP600SN330T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOP5; SMD Mounting: SMD Case: TSOP5 Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.125V Output current: 0.15A Number of channels: 1 Output voltage: 3.3V Tolerance: ±1.5% Input voltage: 1.75...6V Operating temperature: -40...125°C Type of integrated circuit: voltage regulator Manufacturer series: NCP600 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP600SNADJT1G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 150mA Mounting: SMD Case: TSOP5 Kind of voltage regulator: adjustable; LDO; linear Output current: 0.15A Number of channels: 1 Output voltage: 1.25...5V Tolerance: ±1.5% Input voltage: 1.75...6V Operating temperature: -40...125°C Type of integrated circuit: voltage regulator Manufacturer series: NCP600 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1N5365BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 36V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 36V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
на замовлення 523 шт: термін постачання 21-30 дні (днів) |
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| 1N5365BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 36V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 36V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1N5342BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.8V; bulk; CASE017AA; single diode; 10uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Leakage current: 10µA |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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1N5346BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 7.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 9.1V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Leakage current: 7.5µA |
на замовлення 5982 шт: термін постачання 21-30 дні (днів) |
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1N5353BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 16V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Leakage current: 0.5µA |
на замовлення 1468 шт: термін постачання 21-30 дні (днів) |
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| 1N5381BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 130V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 130V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NTMFS5H431NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 600A; 26W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 106A Pulsed drain current: 600A Power dissipation: 26W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MJE15030 | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 30MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJE15031G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 70MHz |
на замовлення 403 шт: термін постачання 21-30 дні (днів) |
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MJD44H11T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 85MHz Application: automotive industry |
на замовлення 2379 шт: термін постачання 21-30 дні (днів) |
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MJD44H11G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 85MHz |
на замовлення 197 шт: термін постачання 21-30 дні (днів) |
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MJD44H11RLG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 85MHz |
на замовлення 1668 шт: термін постачання 21-30 дні (днів) |
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NJVMJD44H11RLG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Application: automotive industry |
на замовлення 1549 шт: термін постачання 21-30 дні (днів) |
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MJD44H11-1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 85MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NJVMJD44H11G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 85MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NJVMJD44H11T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 85MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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D44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Current gain: 40 Mounting: THT Kind of package: tube Frequency: 40MHz |
на замовлення 265 шт: термін постачання 21-30 дні (днів) |
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MJF44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220FP Current gain: 60 Mounting: THT Kind of package: tube Frequency: 50MHz |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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| MJB44H11T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MJB44H11G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KSE44H11 | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: bulk Frequency: 50MHz Pulsed collector current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NJW44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 120W Case: TO3P Current gain: 100...320 Mounting: THT Kind of package: tube Frequency: 85MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NJVMJB44H11T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MJD45H11T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Mounting: SMD Collector current: 8A Kind of package: reel; tape Current gain: 60 Type of transistor: PNP Case: DPAK Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 20W Frequency: 90MHz |
на замовлення 550 шт: термін постачання 21-30 дні (днів) |
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MJD45H11G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Mounting: SMD Collector current: 8A Kind of package: tube Current gain: 60 Type of transistor: PNP Case: DPAK Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 20W Frequency: 90MHz |
на замовлення 261 шт: термін постачання 21-30 дні (днів) |
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MJF45H11G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP Mounting: THT Collector current: 10A Kind of package: tube Current gain: 60 Type of transistor: PNP Case: TO220FP Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 50W Frequency: 40MHz |
на замовлення 104 шт: термін постачання 21-30 дні (днів) |
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| D45H11G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB Mounting: THT Collector current: 10A Kind of package: tube Current gain: 40 Type of transistor: PNP Case: TO220AB Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 50W Frequency: 40MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MJD45H11RLG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Mounting: SMD Collector current: 8A Kind of package: reel; tape Current gain: 60 Type of transistor: PNP Case: DPAK Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 20W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MJB45H11G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK Mounting: SMD Collector current: 10A Kind of package: tube Current gain: 60 Type of transistor: PNP Case: D2PAK Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 50W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MJB45H11T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK Mounting: SMD Collector current: 10A Kind of package: reel; tape Current gain: 60 Type of transistor: PNP Case: D2PAK Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 50W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MJD45H11-1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Mounting: SMD Collector current: 8A Kind of package: tube Current gain: 60 Type of transistor: PNP Case: DPAK Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 20W Frequency: 90MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NJVMJB45H11T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Mounting: SMD Collector current: 10A Kind of package: reel; tape Current gain: 60 Type of transistor: PNP Case: D2PAK Collector-emitter voltage: 80V Polarisation: bipolar Application: automotive industry Power dissipation: 50W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NJVMJD45H11G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry Mounting: SMD Collector current: 8A Kind of package: tube Current gain: 60 Type of transistor: PNP Case: DPAK Collector-emitter voltage: 80V Polarisation: bipolar Application: automotive industry Power dissipation: 20W |
товару немає в наявності |
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| NJVMJD45H11RLG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry Mounting: SMD Collector current: 8A Kind of package: reel; tape Current gain: 60 Type of transistor: PNP Case: DPAK Collector-emitter voltage: 80V Polarisation: bipolar Application: automotive industry Power dissipation: 20W |
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| NJVMJD45H11T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry Mounting: SMD Collector current: 8A Kind of package: reel; tape Current gain: 60 Type of transistor: PNP Case: DPAK Collector-emitter voltage: 80V Polarisation: bipolar Application: automotive industry Power dissipation: 20W |
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| FDB024N08BL7 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 80V Pulsed drain current: 916A Drain current: 162A Gate charge: 178nC On-state resistance: 2.4mΩ Power dissipation: 246W Gate-source voltage: ±20V Case: D2PAK Kind of channel: enhancement Mounting: SMD |
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| FDMA1024NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 6A Drain current: 5A Gate charge: 7.3nC On-state resistance: 75mΩ Power dissipation: 1.4W Gate-source voltage: ±8V Case: WDFN6 Kind of channel: enhancement Mounting: SMD |
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 +1 |
FDME1024NZT | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET Technology: PowerTrench® Type of transistor: N-MOSFET x2 Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.8A Gate charge: 4.2nC On-state resistance: 0.16Ω Power dissipation: 1.4W Gate-source voltage: ±8V Case: MicroFET Kind of channel: enhancement Mounting: SMD |
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| NTMFS024N06CT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 60V Pulsed drain current: 158A Drain current: 17A Gate charge: 5.7nC On-state resistance: 22mΩ Power dissipation: 14W Gate-source voltage: ±20V Case: DFN5x6 Kind of channel: enhancement Mounting: SMD |
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| NVMFD024N06CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8 Type of transistor: N-MOSFET x2 Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 60V Pulsed drain current: 85A Drain current: 24A Gate charge: 5.7nC On-state resistance: 22.6mΩ Power dissipation: 14W Gate-source voltage: ±20V Case: DFN8 Kind of channel: enhancement Mounting: SMD |
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| NVMFS024N06CT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 60V Pulsed drain current: 158A Drain current: 25A Gate charge: 5.7nC On-state resistance: 22mΩ Power dissipation: 14W Gate-source voltage: ±20V Case: DFN5 Kind of channel: enhancement Mounting: SMD |
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| NVTFS024N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 60V Pulsed drain current: 112A Drain current: 24A Gate charge: 5.7nC On-state resistance: 22.6mΩ Power dissipation: 14W Gate-source voltage: ±20V Case: WDFN8 Kind of channel: enhancement Mounting: SMD |
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| NTMFS4C024NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 174A Drain current: 21.7A Gate charge: 14nC On-state resistance: 2.8mΩ Power dissipation: 2.57W Gate-source voltage: ±20V Case: DFN5 Kind of channel: enhancement Mounting: SMD |
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| SS26 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape; 1.3W
Mounting: SMD
Max. forward voltage: 0.7V
Power dissipation: 1.3W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape; 1.3W
Mounting: SMD
Max. forward voltage: 0.7V
Power dissipation: 1.3W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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| FDB120N10 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| FDP120N10 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 296A; 170W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 296A; 170W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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| MM3Z18VST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
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| SZMM3Z18VST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Application: automotive industry
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| NV25512MUW3VTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Access time: 45ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Access time: 45ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
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| CAT25512YI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 20MHz
Interface: SPI
Memory organisation: 64kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 20MHz
Interface: SPI
Memory organisation: 64kx8bit
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| CAT25512HU5I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 20MHz
Interface: SPI
Memory organisation: 64kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 20MHz
Interface: SPI
Memory organisation: 64kx8bit
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| CAT25512VI-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; SO8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of interface: serial
Case: SO8
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; SO8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of interface: serial
Case: SO8
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
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| CAV25512VE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
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| CAV25512YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
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| NTB011N15MC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W
Mounting: SMD
On-state resistance: 10.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 75.4A
Power dissipation: 136.4W
Pulsed drain current: 323A
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 37nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W
Mounting: SMD
On-state resistance: 10.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 75.4A
Power dissipation: 136.4W
Pulsed drain current: 323A
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 37nC
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| NVVR26A120M1WST |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDA; screw,THT
Case: AHPM5-CDA
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDA; screw,THT
Case: AHPM5-CDA
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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| NVVR26A120M1WSB |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDE; screw,THT
Case: AHPM5-CDE
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDE; screw,THT
Case: AHPM5-CDE
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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| NVVR26A120M1WSS |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDI; screw,THT
Case: AHPM5-CDI
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDI; screw,THT
Case: AHPM5-CDI
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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| NCP600SN330T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOP5; SMD
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.125V
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOP5; SMD
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.125V
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
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| NCP600SNADJT1G |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 150mA
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.15A
Number of channels: 1
Output voltage: 1.25...5V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 150mA
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.15A
Number of channels: 1
Output voltage: 1.25...5V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
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| 1N5365BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 523 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.60 грн |
| 25+ | 17.30 грн |
| 26+ | 16.14 грн |
| 100+ | 12.39 грн |
| 250+ | 11.56 грн |
| 1N5365BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| 1N5342BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
на замовлення 800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.23 грн |
| 32+ | 13.23 грн |
| 1N5346BRLG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 7.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 7.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 7.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 7.5µA
на замовлення 5982 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.77 грн |
| 18+ | 23.46 грн |
| 20+ | 20.96 грн |
| 100+ | 13.64 грн |
| 1N5353BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
на замовлення 1468 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.77 грн |
| 21+ | 20.05 грн |
| 50+ | 16.22 грн |
| 100+ | 14.72 грн |
| 250+ | 12.89 грн |
| 500+ | 11.98 грн |
| 1N5381BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 130V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 130V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 5W; 130V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 130V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
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В кошику
од. на суму грн.
| NTMFS5H431NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 600A; 26W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 106A
Pulsed drain current: 600A
Power dissipation: 26W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 600A; 26W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 106A
Pulsed drain current: 600A
Power dissipation: 26W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| MJE15030 |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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В кошику
од. на суму грн.
| MJE15031G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 70MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 70MHz
на замовлення 403 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 124.52 грн |
| 10+ | 68.21 грн |
| 50+ | 67.38 грн |
| MJD44H11T4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
на замовлення 2379 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.77 грн |
| 10+ | 44.75 грн |
| 20+ | 38.51 грн |
| 50+ | 31.61 грн |
| 100+ | 27.45 грн |
| 500+ | 20.46 грн |
| 1000+ | 19.80 грн |
| MJD44H11G | |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
на замовлення 197 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 91.38 грн |
| 10+ | 42.17 грн |
| MJD44H11RLG |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
на замовлення 1668 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 91.38 грн |
| 10+ | 61.31 грн |
| 25+ | 50.08 грн |
| 50+ | 42.84 грн |
| 100+ | 42.67 грн |
| NJVMJD44H11RLG |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Application: automotive industry
на замовлення 1549 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.19 грн |
| 10+ | 46.67 грн |
| 100+ | 31.69 грн |
| 500+ | 29.11 грн |
| MJD44H11-1G | |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
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В кошику
од. на суму грн.
| NJVMJD44H11G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Application: automotive industry
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В кошику
од. на суму грн.
| NJVMJD44H11T4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
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В кошику
од. на суму грн.
| D44H11G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
на замовлення 265 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 89.58 грн |
| 10+ | 52.49 грн |
| 50+ | 38.18 грн |
| 100+ | 37.52 грн |
| MJF44H11G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 169.31 грн |
| 10+ | 91.50 грн |
| MJB44H11T4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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В кошику
од. на суму грн.
| MJB44H11G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
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од. на суму грн.
| KSE44H11 |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
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од. на суму грн.
| NJW44H11G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
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од. на суму грн.
| NJVMJB44H11T4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MJD45H11T4G | |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
на замовлення 550 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.77 грн |
| 10+ | 47.66 грн |
| 25+ | 39.43 грн |
| 50+ | 33.94 грн |
| 100+ | 29.36 грн |
| 500+ | 21.71 грн |
| MJD45H11G | |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
на замовлення 261 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 96.75 грн |
| 10+ | 53.40 грн |
| 25+ | 44.34 грн |
| MJF45H11G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: TO220FP
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: TO220FP
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
на замовлення 104 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 110.64 грн |
| 10+ | 81.52 грн |
| 50+ | 79.03 грн |
| D45H11G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 40
Type of transistor: PNP
Case: TO220AB
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 40
Type of transistor: PNP
Case: TO220AB
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
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| MJD45H11RLG |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
товару немає в наявності
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од. на суму грн.
| MJB45H11G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
товару немає в наявності
В кошику
од. на суму грн.
| MJB45H11T4G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
товару немає в наявності
В кошику
од. на суму грн.
| MJD45H11-1G | |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
товару немає в наявності
В кошику
од. на суму грн.
| NJVMJB45H11T4G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 50W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 50W
товару немає в наявності
В кошику
од. на суму грн.
| NJVMJD45H11G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
товару немає в наявності
В кошику
од. на суму грн.
| NJVMJD45H11RLG |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
товару немає в наявності
В кошику
од. на суму грн.
| NJVMJD45H11T4G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
товару немає в наявності
В кошику
од. на суму грн.
| FDB024N08BL7 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Pulsed drain current: 916A
Drain current: 162A
Gate charge: 178nC
On-state resistance: 2.4mΩ
Power dissipation: 246W
Gate-source voltage: ±20V
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Pulsed drain current: 916A
Drain current: 162A
Gate charge: 178nC
On-state resistance: 2.4mΩ
Power dissipation: 246W
Gate-source voltage: ±20V
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| FDMA1024NZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 5A
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: WDFN6
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 5A
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: WDFN6
Kind of channel: enhancement
Mounting: SMD
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| FDME1024NZT |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Technology: PowerTrench®
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Technology: PowerTrench®
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
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| NTMFS024N06CT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 158A
Drain current: 17A
Gate charge: 5.7nC
On-state resistance: 22mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: DFN5x6
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 158A
Drain current: 17A
Gate charge: 5.7nC
On-state resistance: 22mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: DFN5x6
Kind of channel: enhancement
Mounting: SMD
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| NVMFD024N06CT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 85A
Drain current: 24A
Gate charge: 5.7nC
On-state resistance: 22.6mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 85A
Drain current: 24A
Gate charge: 5.7nC
On-state resistance: 22.6mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
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| NVMFS024N06CT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 158A
Drain current: 25A
Gate charge: 5.7nC
On-state resistance: 22mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 158A
Drain current: 25A
Gate charge: 5.7nC
On-state resistance: 22mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
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| NVTFS024N06CTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 112A
Drain current: 24A
Gate charge: 5.7nC
On-state resistance: 22.6mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 112A
Drain current: 24A
Gate charge: 5.7nC
On-state resistance: 22.6mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
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| NTMFS4C024NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
товару немає в наявності
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