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NSR10F20NXT5G ONSEMI nsr10f20-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 18A
Kind of package: reel; tape
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NSR1030QMUTWG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2EF742343A0DC&compId=NSR1030QMU.PDF?ci_sign=13b552b9ce8dc9ae7b9bb1a1274a98f9e06da466 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4
Type of bridge rectifier: single-phase
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 12A
Case: uDFN4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.6V
Features of semiconductor devices: Schottky
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NSR10F30NXT5G ONSEMI nsr10f30-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 18A
Kind of package: reel; tape
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MC79M15CDTRKG MC79M15CDTRKG ONSEMI MC79M00-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
на замовлення 2029 шт:
термін постачання 21-30 дні (днів)
14+33.02 грн
20+21.06 грн
25+19.12 грн
100+16.62 грн
250+16.14 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
MC79M15CTG MC79M15CTG ONSEMI MC79M00-D.PDF Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
на замовлення 119 шт:
термін постачання 21-30 дні (днів)
13+35.62 грн
18+23.64 грн
25+21.46 грн
50+20.41 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC79M15BDTRKG MC79M15BDTRKG ONSEMI MC79M00-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
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MC79M15BTG ONSEMI mc79m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
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MC1496BDR2G ONSEMI mc1496-d.pdf Category: RTV - audio integrated circuits
Description: IC: modulator/demodulator
Type of integrated circuit: modulator/demodulator
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+12.60 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NCP114BSN330T1G NCP114BSN330T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95FFE918A5F9A0CE&compId=NCP114.PDF?ci_sign=c62f2afdc75e10a2934d8510b2486d372b2617cf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Voltage drop: 0.135V
Output current: 0.225A
Output voltage: 3.3V
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP5
Type of integrated circuit: voltage regulator
на замовлення 1320 шт:
термін постачання 21-30 дні (днів)
39+11.29 грн
48+8.55 грн
55+7.42 грн
65+6.29 грн
73+5.57 грн
100+5.08 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
FCP16N60 FCP16N60 ONSEMI fcp16n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
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FCPF16N60 FCPF16N60 ONSEMI fcp16n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
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NCP1246ALD065R2G ONSEMI ncp1246-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
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NTR4501NT1G NTR4501NT1G ONSEMI pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E63E79CB0B20D4&compId=NxR4501N.PDF?ci_sign=180ebdc299f6e6ce523ffcbfd17d89734c695aba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 8181 шт:
термін постачання 21-30 дні (днів)
32+13.90 грн
45+9.04 грн
60+6.74 грн
100+5.96 грн
500+4.54 грн
1000+4.11 грн
1500+3.83 грн
3000+3.78 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
NTR4503NT1G NTR4503NT1G ONSEMI ntr4503n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2846 шт:
термін постачання 21-30 дні (днів)
39+11.29 грн
46+8.96 грн
55+7.42 грн
100+6.78 грн
250+6.13 грн
500+5.65 грн
1000+5.32 грн
1500+5.16 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
FDC3601N FDC3601N ONSEMI fdc3601n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)
9+49.52 грн
12+34.45 грн
100+22.83 грн
250+19.44 грн
500+17.83 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
NCP115ASN180T1G NCP115ASN180T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
50+8.69 грн
65+6.29 грн
72+5.65 грн
86+4.74 грн
105+3.86 грн
Мінімальне замовлення: 50
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NCP115AMX330TBG NCP115AMX330TBG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD
Case: XDFN4
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 3.3V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
на замовлення 505 шт:
термін постачання 21-30 дні (днів)
28+15.64 грн
33+12.26 грн
38+10.65 грн
45+9.12 грн
100+7.42 грн
250+6.78 грн
500+6.29 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
NCP115AMX105TCG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 0.3A; XDFN4; SMD
Mounting: SMD
Operating temperature: -40...85°C
Manufacturer series: NCP115
Kind of package: reel; tape
Case: XDFN4
Type of integrated circuit: voltage regulator
Output current: 0.3A
Output voltage: 1.05V
Input voltage: 1.7...5.5V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
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NCP115ASN180T2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of package: reel; tape
Case: TSOP5
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Tolerance: ±2%
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Manufacturer series: NCP115
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NRVB1045MFST1G ONSEMI mbr1045mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
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NRVB1045MFST3G ONSEMI MBR1045MFS-D.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
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FQB8N90CTM FQB8N90CTM ONSEMI fqb8n90ctm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
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FQA8N90C-F109 FQA8N90C-F109 ONSEMI fqa8n90c_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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GRUMMBT3904LT1G ONSEMI Category: Unclassified
Description: GRUMMBT3904LT1G
на замовлення 42000 шт:
термін постачання 21-30 дні (днів)
6000+1.10 грн
Мінімальне замовлення: 6000
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BD439G BD439G ONSEMI bd437-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
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MMSD4148 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE14A65A62A745&compId=MMSD4148.pdf?ci_sign=6b14966270aa9742c17004dca6d06657ccb787d6 Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Capacitance: 4pF
Features of semiconductor devices: fast switching
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SZNUP2105LT1G SZNUP2105LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF7227F2F500CE&compId=NUP2105L.PDF?ci_sign=9dc66564d4b677f2b3de9a2ee094de05e6905279 Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
на замовлення 1247 шт:
термін постачання 21-30 дні (днів)
39+11.29 грн
49+8.39 грн
58+6.97 грн
100+6.42 грн
250+5.76 грн
500+5.33 грн
1000+4.93 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
RS1G RS1G ONSEMI RS1x.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
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RS1GFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
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NRVHPRS1GFA NRVHPRS1GFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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NTLUS030N03CTAG ONSEMI ntlus030n03c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Pulsed drain current: 20A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCV8412ASTT1G ONSEMI ncv8412-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.9A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5.9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 0.145Ω
Supply voltage: 12V
Application: automotive industry
Active logical level: low
Operating temperature: -40...150°C
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+51.26 грн
Мінімальне замовлення: 1000
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MBR0540 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DD7E2C76808745&compId=MBR0540.pdf?ci_sign=06cfd6d09330f27921e712f21e663bb50796f06a Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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FGH50T65UPD ONSEMI fgh50t65upd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
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FGHL50T65MQD ONSEMI FGHL50T65MQD-D.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
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FGHL50T65LQDT ONSEMI fghl50t65lqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 509nC
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FGHL50T65MQDT ONSEMI fghl50t65mqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
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FGHL50T65SQDT ONSEMI fghl50t65sqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99.7nC
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AFGHL50T65RQDN ONSEMI afghl50t65rqdn-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Application: automotive industry
Power dissipation: 173W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 65nC
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AFGHL50T65SQ ONSEMI afghl50t65sq-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
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AFGHL50T65SQD ONSEMI afghl50t65sqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 102nC
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AFGHL50T65SQDC ONSEMI afghl50t65sqdc-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 119W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
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MC14050BDR2G MC14050BDR2G ONSEMI mc14049b-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
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MC14050BDTR2G ONSEMI MC14049B-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
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1N5355BRLG 1N5355BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 18V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 18V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
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NVH4L030N120M3S ONSEMI nvh4l030n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Case: TO247-4
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Drain-source voltage: 1.2kV
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NTH4L030N120M3S ONSEMI nth4l030n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Case: TO247-4
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Drain-source voltage: 1.2kV
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FDT3N40TF FDT3N40TF ONSEMI fdt3n40-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NTBG030N120M3S ONSEMI NTBG030N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Case: D2PAK-7
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Drain-source voltage: 1.2kV
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NVBG030N120M3S ONSEMI NVBG030N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Case: D2PAK-7
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Drain-source voltage: 1.2kV
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CPH5524-TL-E ONSEMI cph5524-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 3A; 1.2W
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.2W
Case: CPH5
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 380MHz
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MOC3042M MOC3042M ONSEMI MOC3042M.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 1kV/μs
Manufacturer series: MOC304XM
на замовлення 2491 шт:
термін постачання 21-30 дні (днів)
7+63.42 грн
12+35.01 грн
25+29.93 грн
50+26.87 грн
100+24.20 грн
500+23.72 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MMBT5401 MMBT5401 ONSEMI MMBT5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
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MPSA06G MPSA06G ONSEMI pzta06-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 0.5A
Power dissipation: 0.625W
Collector-emitter voltage: 80V
Polarisation: bipolar
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MPSA06RA ONSEMI pzta06-d.pdf Category: NPN THT transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
2000+7.30 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
NSDP301MX2WT5G ONSEMI nsdp301mx2w-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X2DFNW2; reel,tape
Type of diode: switching
Mounting: SMD
Kind of package: reel; tape
Case: X2DFNW2
Semiconductor structure: single diode
Max. off-state voltage: 80V
Features of semiconductor devices: PIN; RF
Load current: 0.1A
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NSDP301MX3T5G ONSEMI nsdp301mx3-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X3DFN2; reel,tape
Type of diode: switching
Max. off-state voltage: 80V
Load current: 0.1A
Case: X3DFN2
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
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NSVDP301MX2WT5G ONSEMI nsdp301mx2w-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X2DFNW2; reel,tape
Type of diode: switching
Mounting: SMD
Kind of package: reel; tape
Case: X2DFNW2
Semiconductor structure: single diode
Max. off-state voltage: 80V
Features of semiconductor devices: PIN; RF
Load current: 0.1A
Application: automotive industry
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FAN5622SX FAN5622SX ONSEMI fan5626-d.pdf Category: LED drivers
Description: IC: driver; LED driver; SWD; TSOT23-6; 30mA; Ch: 2; 2.7÷5.5VDC
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: LED driver
Mounting: SMD
Interface: SWD
Output current: 30mA
Maximum output current: 30mA
Number of channels: 2
Integrated circuit features: linear dimming; PWM
Case: TSOT23-6
Type of integrated circuit: driver
на замовлення 2762 шт:
термін постачання 21-30 дні (днів)
6+73.85 грн
10+44.69 грн
25+37.76 грн
100+29.77 грн
250+25.82 грн
500+24.53 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
1N5338BRLG ONSEMI 1n5333b-d.pdf description Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
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NSR10F20NXT5G nsr10f20-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 18A
Kind of package: reel; tape
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NSR1030QMUTWG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2EF742343A0DC&compId=NSR1030QMU.PDF?ci_sign=13b552b9ce8dc9ae7b9bb1a1274a98f9e06da466
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4
Type of bridge rectifier: single-phase
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 12A
Case: uDFN4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.6V
Features of semiconductor devices: Schottky
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NSR10F30NXT5G nsr10f30-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 18A
Kind of package: reel; tape
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MC79M15CDTRKG MC79M00-D.PDF
MC79M15CDTRKG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
на замовлення 2029 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+33.02 грн
20+21.06 грн
25+19.12 грн
100+16.62 грн
250+16.14 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
MC79M15CTG MC79M00-D.PDF
MC79M15CTG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
на замовлення 119 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+35.62 грн
18+23.64 грн
25+21.46 грн
50+20.41 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MC79M15BDTRKG MC79M00-D.PDF
MC79M15BDTRKG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
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MC79M15BTG mc79m00-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
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MC1496BDR2G mc1496-d.pdf
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: modulator/demodulator
Type of integrated circuit: modulator/demodulator
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+12.60 грн
Мінімальне замовлення: 2500
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NCP114BSN330T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95FFE918A5F9A0CE&compId=NCP114.PDF?ci_sign=c62f2afdc75e10a2934d8510b2486d372b2617cf
NCP114BSN330T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Voltage drop: 0.135V
Output current: 0.225A
Output voltage: 3.3V
Number of channels: 1
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP5
Type of integrated circuit: voltage regulator
на замовлення 1320 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.29 грн
48+8.55 грн
55+7.42 грн
65+6.29 грн
73+5.57 грн
100+5.08 грн
Мінімальне замовлення: 39
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FCP16N60 fcp16n60-d.pdf
FCP16N60
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
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FCPF16N60 fcp16n60-d.pdf
FCPF16N60
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
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NCP1246ALD065R2G ncp1246-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
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NTR4501NT1G pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E63E79CB0B20D4&compId=NxR4501N.PDF?ci_sign=180ebdc299f6e6ce523ffcbfd17d89734c695aba
NTR4501NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 8181 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.90 грн
45+9.04 грн
60+6.74 грн
100+5.96 грн
500+4.54 грн
1000+4.11 грн
1500+3.83 грн
3000+3.78 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
NTR4503NT1G ntr4503n-d.pdf
NTR4503NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.73W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2846 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.29 грн
46+8.96 грн
55+7.42 грн
100+6.78 грн
250+6.13 грн
500+5.65 грн
1000+5.32 грн
1500+5.16 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
FDC3601N fdc3601n-d.pdf
FDC3601N
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.52 грн
12+34.45 грн
100+22.83 грн
250+19.44 грн
500+17.83 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
NCP115ASN180T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32
NCP115ASN180T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.69 грн
65+6.29 грн
72+5.65 грн
86+4.74 грн
105+3.86 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
NCP115AMX330TBG pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32
NCP115AMX330TBG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD
Case: XDFN4
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 3.3V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
на замовлення 505 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.64 грн
33+12.26 грн
38+10.65 грн
45+9.12 грн
100+7.42 грн
250+6.78 грн
500+6.29 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
NCP115AMX105TCG pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 0.3A; XDFN4; SMD
Mounting: SMD
Operating temperature: -40...85°C
Manufacturer series: NCP115
Kind of package: reel; tape
Case: XDFN4
Type of integrated circuit: voltage regulator
Output current: 0.3A
Output voltage: 1.05V
Input voltage: 1.7...5.5V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
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NCP115ASN180T2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of package: reel; tape
Case: TSOP5
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Tolerance: ±2%
Input voltage: 1.7...5.5V
Output voltage: 1.8V
Manufacturer series: NCP115
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NRVB1045MFST1G mbr1045mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
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NRVB1045MFST3G MBR1045MFS-D.PDF
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 20A
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FQB8N90CTM fqb8n90ctm-d.pdf
FQB8N90CTM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
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FQA8N90C-F109 fqa8n90c_f109-d.pdf
FQA8N90C-F109
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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GRUMMBT3904LT1G
Виробник: ONSEMI
Category: Unclassified
Description: GRUMMBT3904LT1G
на замовлення 42000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6000+1.10 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
BD439G bd437-d.pdf
BD439G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
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MMSD4148 pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE14A65A62A745&compId=MMSD4148.pdf?ci_sign=6b14966270aa9742c17004dca6d06657ccb787d6
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Capacitance: 4pF
Features of semiconductor devices: fast switching
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SZNUP2105LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF7227F2F500CE&compId=NUP2105L.PDF?ci_sign=9dc66564d4b677f2b3de9a2ee094de05e6905279
SZNUP2105LT1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
на замовлення 1247 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.29 грн
49+8.39 грн
58+6.97 грн
100+6.42 грн
250+5.76 грн
500+5.33 грн
1000+4.93 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
RS1G RS1x.pdf
RS1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
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RS1GFA rs1afa-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
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NRVHPRS1GFA rs1afa-d.pdf
NRVHPRS1GFA
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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NTLUS030N03CTAG ntlus030n03c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Pulsed drain current: 20A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCV8412ASTT1G ncv8412-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.9A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5.9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 0.145Ω
Supply voltage: 12V
Application: automotive industry
Active logical level: low
Operating temperature: -40...150°C
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+51.26 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
MBR0540 pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DD7E2C76808745&compId=MBR0540.pdf?ci_sign=06cfd6d09330f27921e712f21e663bb50796f06a
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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FGH50T65UPD fgh50t65upd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
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FGHL50T65MQD FGHL50T65MQD-D.PDF
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
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FGHL50T65LQDT fghl50t65lqdt-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 509nC
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FGHL50T65MQDT fghl50t65mqdt-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
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FGHL50T65SQDT fghl50t65sqdt-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99.7nC
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AFGHL50T65RQDN afghl50t65rqdn-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Application: automotive industry
Power dissipation: 173W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 65nC
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AFGHL50T65SQ afghl50t65sq-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
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AFGHL50T65SQD afghl50t65sqd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 102nC
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AFGHL50T65SQDC afghl50t65sqdc-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 119W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
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MC14050BDR2G mc14049b-d.pdf
MC14050BDR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
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MC14050BDTR2G MC14049B-D.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
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1N5355BRLG description 1N53xx.PDF
1N5355BRLG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 18V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 18V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
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NVH4L030N120M3S nvh4l030n120m3s-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Case: TO247-4
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Drain-source voltage: 1.2kV
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NTH4L030N120M3S nth4l030n120m3s-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Case: TO247-4
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Drain-source voltage: 1.2kV
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FDT3N40TF fdt3n40-d.pdf
FDT3N40TF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NTBG030N120M3S NTBG030N120M3S-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Case: D2PAK-7
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Drain-source voltage: 1.2kV
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NVBG030N120M3S NVBG030N120M3S-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Case: D2PAK-7
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Drain-source voltage: 1.2kV
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CPH5524-TL-E cph5524-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 3A; 1.2W
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.2W
Case: CPH5
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 380MHz
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MOC3042M MOC3042M.pdf
MOC3042M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 1kV/μs
Manufacturer series: MOC304XM
на замовлення 2491 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.42 грн
12+35.01 грн
25+29.93 грн
50+26.87 грн
100+24.20 грн
500+23.72 грн
Мінімальне замовлення: 7
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MMBT5401 MMBT5401.pdf
MMBT5401
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
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MPSA06G pzta06-d.pdf
MPSA06G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 0.5A
Power dissipation: 0.625W
Collector-emitter voltage: 80V
Polarisation: bipolar
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MPSA06RA pzta06-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+7.30 грн
Мінімальне замовлення: 2000
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NSDP301MX2WT5G nsdp301mx2w-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X2DFNW2; reel,tape
Type of diode: switching
Mounting: SMD
Kind of package: reel; tape
Case: X2DFNW2
Semiconductor structure: single diode
Max. off-state voltage: 80V
Features of semiconductor devices: PIN; RF
Load current: 0.1A
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NSDP301MX3T5G nsdp301mx3-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X3DFN2; reel,tape
Type of diode: switching
Max. off-state voltage: 80V
Load current: 0.1A
Case: X3DFN2
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
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NSVDP301MX2WT5G nsdp301mx2w-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X2DFNW2; reel,tape
Type of diode: switching
Mounting: SMD
Kind of package: reel; tape
Case: X2DFNW2
Semiconductor structure: single diode
Max. off-state voltage: 80V
Features of semiconductor devices: PIN; RF
Load current: 0.1A
Application: automotive industry
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FAN5622SX fan5626-d.pdf
FAN5622SX
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SWD; TSOT23-6; 30mA; Ch: 2; 2.7÷5.5VDC
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: LED driver
Mounting: SMD
Interface: SWD
Output current: 30mA
Maximum output current: 30mA
Number of channels: 2
Integrated circuit features: linear dimming; PWM
Case: TSOT23-6
Type of integrated circuit: driver
на замовлення 2762 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+73.85 грн
10+44.69 грн
25+37.76 грн
100+29.77 грн
250+25.82 грн
500+24.53 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
1N5338BRLG description 1n5333b-d.pdf
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
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