| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| 1SS400T5G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523; Ufmax: 1.2V Type of diode: switching Case: SOD523 Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1.2V Kind of package: reel; tape Features of semiconductor devices: small signal Reverse recovery time: 4ns |
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| NXH020F120MNF1PG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
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| NXH020F120MNF1PTG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||||||||||||||
| NXH020P120MNF1PG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||||||||||||||
| NXH020P120MNF1PTG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBRA340T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.39V Kind of package: reel; tape |
на замовлення 2363 шт: термін постачання 21-30 дні (днів) |
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| MC74VHC4051DR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital Type of integrated circuit: digital |
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В кошику од. на суму грн. | |||||||||||||||||||
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HUF75344P3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Power dissipation: 285W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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NCP51460SN33T1G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 3.3V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: 0...100°C Kind of package: reel; tape Maximum output current: 20mA Operating voltage: 4.2...28V |
на замовлення 2364 шт: термін постачання 21-30 дні (днів) |
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2N3442G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 10A Power dissipation: 117W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 800kHz |
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В кошику од. на суму грн. | ||||||||||||||||||
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1N5402RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 3A; reel,tape; Ifsm: 200A; DO27 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
на замовлення 526 шт: термін постачання 21-30 дні (днів) |
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1N5402G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BC846BM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.265/0.64W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.265/0.64W Case: SOT723 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 8000 шт: термін постачання 21-30 дні (днів) |
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| US1JFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NRVUS1JFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DAN222M3T5G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 80V; 100mA; 4ns; SOT723; Ufmax: 1.2V; 260mW Capacitance: 3.5pF Mounting: SMD Type of diode: rectifying Case: SOT723 Features of semiconductor devices: ultrafast switching Reverse recovery time: 4ns Leakage current: 0.1mA Load current: 0.1A Power dissipation: 0.26W Max. forward voltage: 1.2V Max. off-state voltage: 80V Kind of package: reel; tape Semiconductor structure: common cathode; double |
на замовлення 6362 шт: термін постачання 21-30 дні (днів) |
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NC7WZ16P6X | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS Mounting: SMD Case: SC70-6 Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Quiescent current: 10µA |
на замовлення 1614 шт: термін постачання 21-30 дні (днів) |
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| NTBLS001N06C | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L Mounting: SMD Case: H-PSOF8L Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 143nC On-state resistance: 0.9mΩ Power dissipation: 284W Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 422A Pulsed drain current: 900A Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX84B3V3LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84B |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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| SZBZX84B3V3LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84B Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP43080ADR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
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В кошику од. на суму грн. | ||||||||||||||||||
| NCP43080AMTTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: WDFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
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В кошику од. на суму грн. | |||||||||||||||||||
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NCP43080DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
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В кошику од. на суму грн. | ||||||||||||||||||
| NCP43080DMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: DFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
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В кошику од. на суму грн. | |||||||||||||||||||
| NCP43080DMTTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: WDFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP4308DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; SO8; flyback; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FAN6248HCMX | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FAN6248HDMX | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
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В кошику од. на суму грн. | |||||||||||||||||||
| FAN6248LDMX | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVR05F40NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; 0402; SMD; 40V; 0.5A; reel,tape Case: 0402 Mounting: SMD Load current: 0.5A Type of diode: Schottky switching Semiconductor structure: single diode Max. forward impulse current: 10A Kind of package: reel; tape Application: automotive industry Max. off-state voltage: 40V Max. forward voltage: 0.46V |
на замовлення 4980 шт: термін постачання 21-30 дні (днів) |
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| NSVR0520V2T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 20V; 0.5A; reel,tape Case: SOD523 Mounting: SMD Load current: 0.5A Type of diode: Schottky switching Semiconductor structure: single diode Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry Max. off-state voltage: 20V Max. forward voltage: 0.48V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVR0530P2T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape Case: SOD923 Mounting: SMD Load current: 0.5A Type of diode: Schottky switching Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry Max. off-state voltage: 30V Max. forward voltage: 0.62V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SBC846BLT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FSA2269L10X | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA Number of channels: 2 Mounting: SMD Kind of package: reel; tape Kind of output: SPDT x2 Technology: TTL Operating temperature: -40...85°C Quiescent current: 500nA Supply voltage: 1.65...4.5V DC Case: MicroPak10 Type of integrated circuit: analog switch |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SS15 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.5V Load current: 1A Max. forward impulse current: 40A Max. off-state voltage: 50V Kind of package: reel; tape Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SS15FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.7V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: reel; tape Case: SOD123F |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDG6301N-F085 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET x2 Polarisation: unipolar On-state resistance: 7Ω Drain current: 0.22A Power dissipation: 0.3W Gate-source voltage: ±8V Drain-source voltage: 25V Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MJ15024G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 4MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC238ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; TTL; SMD; TSSOP16 Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: TSSOP16 Operating temperature: -40...85°C Family: HC Number of inputs: 6 Supply voltage: 2...6V DC Kind of integrated circuit: decoder; demultiplexer Technology: TTL Manufacturer series: HC Kind of package: reel; tape |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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MC74HC238ADG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16 Mounting: SMD Technology: CMOS Case: SOIC16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 2...6V DC Number of inputs: 6 Kind of integrated circuit: decoder; demultiplexer Kind of package: tube Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC238ADR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16 Mounting: SMD Technology: CMOS Case: SOIC16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 2...6V DC Number of inputs: 6 Kind of integrated circuit: decoder; demultiplexer Kind of package: reel; tape Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SBAS16HT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.75V Max. forward impulse current: 36A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry Max. load current: 1A |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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SBAS16LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 414 шт: термін постачання 21-30 дні (днів) |
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FDP2532 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; TO220AB Case: TO220AB Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Technology: PowerTrench® Kind of package: tube Polarisation: unipolar Gate charge: 107nC On-state resistance: 14mΩ Drain current: 56A Power dissipation: 310W Drain-source voltage: 150V Gate-source voltage: ±20V |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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FDP2572 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB Case: TO220AB Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 34nC On-state resistance: 146mΩ Drain current: 20A Power dissipation: 135W Drain-source voltage: 150V Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDP2552 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB Case: TO220AB Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 97mΩ Drain current: 26A Power dissipation: 150W Drain-source voltage: 150V Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FDY1002PZ | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F Polarisation: unipolar Drain-source voltage: -20V Drain current: -830mA Power dissipation: 0.625W On-state resistance: 0.85Ω Gate-source voltage: ±8V Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: P-MOSFET x2 Kind of package: reel; tape Case: SOT563F |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NDT3055L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3888 шт: термін постачання 21-30 дні (днів) |
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NTD3055L104T4G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 45A Power dissipation: 48W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 523 шт: термін постачання 21-30 дні (днів) |
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NTF3055L108T1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Pulsed drain current: 9A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 328 шт: термін постачання 21-30 дні (днів) |
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NVF3055L108T1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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| NTD3055L170T4G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 28.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.17Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STDV3055L104T4G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 45A Power dissipation: 48W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FIN1001M5X | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: digital; differential,line driver,translator; LVDS; 3.6VDC Technology: LVDS Type of integrated circuit: digital Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 3.6V DC Kind of integrated circuit: differential; line driver; translator Case: SOT23-5 |
на замовлення 5636 шт: термін постачання 21-30 дні (днів) |
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FIN1002M5X | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: digital; line receiver,differential,translator; LVDS; SMD Technology: LVDS Type of integrated circuit: digital Kind of package: tube Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 3...3.6V DC Kind of integrated circuit: differential; line receiver; translator Case: SOT23-5 |
на замовлення 1562 шт: термін постачання 21-30 дні (днів) |
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| 2SC5706-TL-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 5A; 0.8W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 5A Power dissipation: 0.8W Case: DPAK Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SC5706-TL-H | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 5A; 0.8W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 5A Power dissipation: 0.8W Case: DPAK Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC34072DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: 0...70°C Slew rate: 13V/μs Input offset voltage: 1mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
на замовлення 379 шт: термін постачання 21-30 дні (днів) |
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| MC34072ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: 0...70°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC34072AMTTBG | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: WQFN10 Operating temperature: 0...70°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. |
| 1SS400T5G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523; Ufmax: 1.2V
Type of diode: switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523; Ufmax: 1.2V
Type of diode: switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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| NXH020F120MNF1PG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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| NXH020F120MNF1PTG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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| NXH020P120MNF1PG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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| NXH020P120MNF1PTG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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| MBRA340T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Kind of package: reel; tape
на замовлення 2363 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.04 грн |
| 17+ | 25.46 грн |
| 50+ | 20.19 грн |
| 100+ | 18.21 грн |
| 250+ | 15.99 грн |
| 500+ | 14.42 грн |
| 1000+ | 13.10 грн |
| MC74VHC4051DR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital
Type of integrated circuit: digital
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| HUF75344P3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 231.60 грн |
| 10+ | 145.02 грн |
| NCP51460SN33T1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...100°C
Kind of package: reel; tape
Maximum output current: 20mA
Operating voltage: 4.2...28V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...100°C
Kind of package: reel; tape
Maximum output current: 20mA
Operating voltage: 4.2...28V
на замовлення 2364 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.97 грн |
| 40+ | 10.55 грн |
| 46+ | 9.06 грн |
| 100+ | 8.49 грн |
| 250+ | 8.16 грн |
| 500+ | 7.33 грн |
| 1000+ | 7.00 грн |
| 2N3442G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
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| 1N5402RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 526 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.07 грн |
| 25+ | 16.64 грн |
| 28+ | 15.00 грн |
| 100+ | 10.55 грн |
| 250+ | 10.13 грн |
| 1N5402G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
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| BC846BM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.265/0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265/0.64W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.265/0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265/0.64W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.76 грн |
| 68+ | 6.10 грн |
| 94+ | 4.40 грн |
| 109+ | 3.81 грн |
| 500+ | 2.74 грн |
| 1000+ | 2.41 грн |
| 2500+ | 2.04 грн |
| 4000+ | 1.89 грн |
| 8000+ | 1.67 грн |
| US1JFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
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| NRVUS1JFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| DAN222M3T5G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SOT723; Ufmax: 1.2V; 260mW
Capacitance: 3.5pF
Mounting: SMD
Type of diode: rectifying
Case: SOT723
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Leakage current: 0.1mA
Load current: 0.1A
Power dissipation: 0.26W
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SOT723; Ufmax: 1.2V; 260mW
Capacitance: 3.5pF
Mounting: SMD
Type of diode: rectifying
Case: SOT723
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Leakage current: 0.1mA
Load current: 0.1A
Power dissipation: 0.26W
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
на замовлення 6362 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 220+ | 2.02 грн |
| 264+ | 1.57 грн |
| 278+ | 1.48 грн |
| 295+ | 1.40 грн |
| 500+ | 1.33 грн |
| 1000+ | 1.25 грн |
| NC7WZ16P6X |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
на замовлення 1614 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.54 грн |
| 56+ | 7.42 грн |
| 69+ | 6.01 грн |
| 118+ | 3.49 грн |
| 148+ | 2.79 грн |
| 1000+ | 2.45 грн |
| NTBLS001N06C |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L
Mounting: SMD
Case: H-PSOF8L
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 143nC
On-state resistance: 0.9mΩ
Power dissipation: 284W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 422A
Pulsed drain current: 900A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L
Mounting: SMD
Case: H-PSOF8L
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 143nC
On-state resistance: 0.9mΩ
Power dissipation: 284W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 422A
Pulsed drain current: 900A
Polarisation: unipolar
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| BZX84B3V3LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84B
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84B
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.87 грн |
| 68+ | 6.10 грн |
| SZBZX84B3V3LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84B
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84B
Application: automotive industry
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| NCP43080ADR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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| NCP43080AMTTWG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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| NCP43080DDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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| NCP43080DMNTWG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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| NCP43080DMTTWG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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| NCP4308DDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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| FAN6248HCMX |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
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| FAN6248HDMX |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
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| FAN6248LDMX |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
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| NSVR05F40NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 40V; 0.5A; reel,tape
Case: 0402
Mounting: SMD
Load current: 0.5A
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 40V
Max. forward voltage: 0.46V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 40V; 0.5A; reel,tape
Case: 0402
Mounting: SMD
Load current: 0.5A
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 40V
Max. forward voltage: 0.46V
на замовлення 4980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.62 грн |
| 22+ | 19.61 грн |
| 24+ | 17.63 грн |
| 100+ | 12.28 грн |
| 500+ | 9.56 грн |
| 1000+ | 8.90 грн |
| NSVR0520V2T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 20V; 0.5A; reel,tape
Case: SOD523
Mounting: SMD
Load current: 0.5A
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 20V
Max. forward voltage: 0.48V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 20V; 0.5A; reel,tape
Case: SOD523
Mounting: SMD
Load current: 0.5A
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 20V
Max. forward voltage: 0.48V
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| NSVR0530P2T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape
Case: SOD923
Mounting: SMD
Load current: 0.5A
Type of diode: Schottky switching
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 30V
Max. forward voltage: 0.62V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape
Case: SOD923
Mounting: SMD
Load current: 0.5A
Type of diode: Schottky switching
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 30V
Max. forward voltage: 0.62V
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| SBC846BLT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| FSA2269L10X |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Technology: TTL
Operating temperature: -40...85°C
Quiescent current: 500nA
Supply voltage: 1.65...4.5V DC
Case: MicroPak10
Type of integrated circuit: analog switch
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Technology: TTL
Operating temperature: -40...85°C
Quiescent current: 500nA
Supply voltage: 1.65...4.5V DC
Case: MicroPak10
Type of integrated circuit: analog switch
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| SS15 | ![]() |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
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| SS15FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SOD123F
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| FDG6301N-F085 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 7Ω
Drain current: 0.22A
Power dissipation: 0.3W
Gate-source voltage: ±8V
Drain-source voltage: 25V
Application: automotive industry
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 7Ω
Drain current: 0.22A
Power dissipation: 0.3W
Gate-source voltage: ±8V
Drain-source voltage: 25V
Application: automotive industry
Kind of channel: enhancement
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| MJ15024G | ![]() |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
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| MC74HC238ADTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; TTL; SMD; TSSOP16
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Family: HC
Number of inputs: 6
Supply voltage: 2...6V DC
Kind of integrated circuit: decoder; demultiplexer
Technology: TTL
Manufacturer series: HC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; TTL; SMD; TSSOP16
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Family: HC
Number of inputs: 6
Supply voltage: 2...6V DC
Kind of integrated circuit: decoder; demultiplexer
Technology: TTL
Manufacturer series: HC
Kind of package: reel; tape
на замовлення 209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.52 грн |
| 28+ | 14.75 грн |
| MC74HC238ADG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Mounting: SMD
Technology: CMOS
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 6
Kind of integrated circuit: decoder; demultiplexer
Kind of package: tube
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Mounting: SMD
Technology: CMOS
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 6
Kind of integrated circuit: decoder; demultiplexer
Kind of package: tube
Type of integrated circuit: digital
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| MC74HC238ADR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Mounting: SMD
Technology: CMOS
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 6
Kind of integrated circuit: decoder; demultiplexer
Kind of package: reel; tape
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Mounting: SMD
Technology: CMOS
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 6
Kind of integrated circuit: decoder; demultiplexer
Kind of package: reel; tape
Type of integrated circuit: digital
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| SBAS16HT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
на замовлення 200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 122+ | 3.38 грн |
| 129+ | 3.21 грн |
| SBAS16LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 414 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.21 грн |
| 81+ | 5.11 грн |
| 88+ | 4.70 грн |
| 129+ | 3.21 грн |
| FDP2532 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Technology: PowerTrench®
Kind of package: tube
Polarisation: unipolar
Gate charge: 107nC
On-state resistance: 14mΩ
Drain current: 56A
Power dissipation: 310W
Drain-source voltage: 150V
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Technology: PowerTrench®
Kind of package: tube
Polarisation: unipolar
Gate charge: 107nC
On-state resistance: 14mΩ
Drain current: 56A
Power dissipation: 310W
Drain-source voltage: 150V
Gate-source voltage: ±20V
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 267.09 грн |
| 10+ | 168.09 грн |
| FDP2572 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 146mΩ
Drain current: 20A
Power dissipation: 135W
Drain-source voltage: 150V
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 146mΩ
Drain current: 20A
Power dissipation: 135W
Drain-source voltage: 150V
Gate-source voltage: ±20V
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| FDP2552 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 97mΩ
Drain current: 26A
Power dissipation: 150W
Drain-source voltage: 150V
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 97mΩ
Drain current: 26A
Power dissipation: 150W
Drain-source voltage: 150V
Gate-source voltage: ±20V
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| FDY1002PZ |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -830mA
Power dissipation: 0.625W
On-state resistance: 0.85Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Case: SOT563F
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -830mA
Power dissipation: 0.625W
On-state resistance: 0.85Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Case: SOT563F
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| NDT3055L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3888 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.34 грн |
| 9+ | 49.11 грн |
| 10+ | 44.99 грн |
| 50+ | 34.44 грн |
| 100+ | 30.65 грн |
| 250+ | 26.61 грн |
| 500+ | 24.14 грн |
| 1000+ | 22.25 грн |
| NTD3055L104T4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 523 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.20 грн |
| 10+ | 55.87 грн |
| 20+ | 50.92 грн |
| 100+ | 40.79 грн |
| 200+ | 37.16 грн |
| 250+ | 36.91 грн |
| NTF3055L108T1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Pulsed drain current: 9A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Pulsed drain current: 9A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 328 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.82 грн |
| 50+ | 31.06 грн |
| 100+ | 28.18 грн |
| 200+ | 25.79 грн |
| NVF3055L108T1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| NTD3055L170T4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| STDV3055L104T4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FIN1001M5X |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC
Technology: LVDS
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3.6V DC
Kind of integrated circuit: differential; line driver; translator
Case: SOT23-5
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC
Technology: LVDS
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3.6V DC
Kind of integrated circuit: differential; line driver; translator
Case: SOT23-5
на замовлення 5636 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.06 грн |
| 10+ | 59.33 грн |
| 25+ | 53.56 грн |
| 50+ | 49.44 грн |
| FIN1002M5X |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Technology: LVDS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3...3.6V DC
Kind of integrated circuit: differential; line receiver; translator
Case: SOT23-5
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Technology: LVDS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3...3.6V DC
Kind of integrated circuit: differential; line receiver; translator
Case: SOT23-5
на замовлення 1562 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 85.19 грн |
| 10+ | 53.64 грн |
| 25+ | 43.92 грн |
| 100+ | 33.04 грн |
| 250+ | 29.75 грн |
| 2SC5706-TL-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
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| 2SC5706-TL-H |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 5A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 5A; 0.8W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
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| MC34072DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 1mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 1mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
на замовлення 379 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.83 грн |
| 17+ | 25.05 грн |
| 19+ | 22.16 грн |
| 25+ | 18.95 грн |
| 50+ | 17.06 грн |
| 100+ | 15.82 грн |
| 250+ | 15.66 грн |
| MC34072ADR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MC34072AMTTBG |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: WQFN10
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: WQFN10
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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