| Фото | Назва | Виробник | Інформація | Доступність | Ціна | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|  +1 | M74VHC1GT00DFT2G | ONSEMI | Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: TTL Supply voltage: 2...5.5V DC Mounting: SMD Case: SC88A Operating temperature: -55...125°C Family: VHC Kind of package: reel; tape Quiescent current: 40µA Number of inputs: 2 Kind of gate: NAND | на замовлення 1106 шт:термін постачання 21-30 дні (днів) | 
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|   | SS23 | ONSEMI |  Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape | на замовлення 2276 шт:термін постачання 21-30 дні (днів) | 
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| SS23FA | ONSEMI |  Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| MJD340T4G | ONSEMI |  Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| NJVMJD340T4G | ONSEMI |  Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| VESNJVMJD340T4G | ONSEMI | Category: Unclassified Description: VESNJVMJD340T4G | на замовлення 30000 шт:термін постачання 21-30 дні (днів) | 
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| NVMFS5C673NLAFT1G | ONSEMI |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 23W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| BZX79C15-T50A | ONSEMI |  Category: THT Zener diodes Description: Diode: Zener; 0.5W; 15V; Ammo Pack; CASE017AG; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: Ammo Pack Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX79C | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| BZX79C15-T50R | ONSEMI |  Category: THT Zener diodes Description: Diode: Zener; 0.5W; 15V; reel,tape; CASE017AG; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX79C | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | M74VHC1G126DTT1G | ONSEMI |  Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: TSOP5 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...5.5V DC Kind of package: reel; tape Quiescent current: 40µA Manufacturer series: VHC | на замовлення 1 шт:термін постачання 21-30 дні (днів) | 
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| BZX84C5V6LT3G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener Type of diode: Zener | на замовлення 10000 шт:термін постачання 21-30 дні (днів) | 
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| S210 | ONSEMI |  Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Mounting: SMD Case: SMB Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 2A Max. forward voltage: 0.85V Max. forward impulse current: 50A Max. off-state voltage: 100V Kind of package: reel; tape | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| S210FA | ONSEMI |  Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape Mounting: SMD Case: SOD123F Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 2A Max. forward voltage: 0.85V Max. forward impulse current: 50A Max. off-state voltage: 100V Kind of package: reel; tape | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | MUN5131DW1T1G | ONSEMI |  Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.187W Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ | на замовлення 730 шт:термін постачання 21-30 дні (днів) | 
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| SMUN5131DW1T1G | ONSEMI |  Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Application: automotive industry Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.385W Current gain: 8...15 Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ Quantity in set/package: 3000pcs. | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | MM74HCT32M | ONSEMI |  Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Family: HCT Delay time: 10ns Kind of package: tube Supply voltage: 4.5...5.5V DC | на замовлення 264 шт:термін постачання 21-30 дні (днів) | 
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|   | MC74HCT32ADR2G | ONSEMI |  Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -55...125°C Family: HCT Delay time: 15ns Kind of package: reel; tape Supply voltage: 2...6V DC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| MC74HCT32ADTR2G | ONSEMI |  Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Family: HCT Kind of package: reel; tape Supply voltage: 2...6V DC Manufacturer series: HCT | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | MM74HCT32MTCX | ONSEMI |  Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: HCT Delay time: 10ns Kind of package: reel; tape Supply voltage: 4.5...5.5V DC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MM74HCT32MX | ONSEMI |  Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Family: HCT Delay time: 10ns Kind of package: reel; tape Supply voltage: 4.5...5.5V DC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MM74HCT08M | ONSEMI |  Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 1.4mA Family: HCT | на замовлення 165 шт:термін постачання 21-30 дні (днів) | 
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|   | MC74HCT08ADR2G | ONSEMI |  Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT Delay time: 15ns | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MC74HCT08ADTR2G | ONSEMI |  Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT Delay time: 15ns | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MM74HCT08MTCX | ONSEMI |  Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 12ns Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: HCT Delay time: 12ns | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | MM74HCT08MX | ONSEMI |  Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: HCT Delay time: 12ns | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | NLV74HCT08ADTR2G | ONSEMI | Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -55÷125°C; 40uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | NCP4305DDR2G | ONSEMI |  Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC Output current: 4...8A Case: SO8 Operating temperature: -40...125°C Mounting: SMD Topology: flyback; forward; resonant LLC Number of channels: 1 Operating voltage: 7.8...37V DC Frequency: 1MHz Type of integrated circuit: PMIC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| NCP4305DMNTWG | ONSEMI |  Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC Output current: 4...8A Case: DFN8 Operating temperature: -40...125°C Mounting: SMD Topology: flyback; forward; resonant LLC Number of channels: 1 Operating voltage: 7.8...37V DC Frequency: 1MHz Type of integrated circuit: PMIC | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| NCP4305DMTTWG | ONSEMI |  Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC Output current: 4...8A Case: WDFN8 Operating temperature: -40...125°C Mounting: SMD Topology: flyback; forward; resonant LLC Number of channels: 1 Operating voltage: 7.8...37V DC Frequency: 1MHz Type of integrated circuit: PMIC | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | KSP10BU | ONSEMI |  Category: NPN THT transistors Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.35W Case: TO92 Current gain: 60 Mounting: THT Kind of package: bulk Frequency: 650MHz | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| MJ21196G | ONSEMI |  Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3 Case: TO3 Power dissipation: 250W Collector current: 16A Collector-emitter voltage: 250V Frequency: 4MHz Kind of package: in-tray Polarisation: bipolar Mounting: THT Type of transistor: NPN | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | NZT7053 | ONSEMI |  Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223 Kind of transistor: Darlington Case: SOT223 Type of transistor: NPN Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Collector current: 1.5A Collector-emitter voltage: 100V Frequency: 200MHz Polarisation: bipolar | на замовлення 3982 шт:термін постачання 21-30 дні (днів) | 
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|   | NDC7002N | ONSEMI |  Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6 Kind of channel: enhancement Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.51A Gate charge: 1nC Power dissipation: 0.96W On-state resistance: 4Ω Gate-source voltage: ±20V Case: SuperSOT-6 | на замовлення 3274 шт:термін постачання 21-30 дні (днів) | 
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| SZBZX84C39LT1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | NC7SZ18P6X | ONSEMI |  Category: Decoders, multiplexers, switches Description: IC: digital; demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC; -40÷85°C Type of integrated circuit: digital Mounting: SMD Number of channels: 1 Case: SC70 Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Kind of integrated circuit: demultiplexer | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| NL7SZ18MUR2G | ONSEMI |  Category: Decoders, multiplexers, switches Description: IC: digital; 3-state,demultiplexer; Ch: 2; CMOS; SMD; uDFN6 Type of integrated circuit: digital Mounting: SMD Number of channels: 2 Case: uDFN6 Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Kind of integrated circuit: 3-state; demultiplexer Technology: CMOS | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | MM3Z10VST1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G | на замовлення 2270 шт:термін постачання 21-30 дні (днів) | 
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|   | 2N6491G | ONSEMI |    Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB Mounting: THT Type of transistor: PNP Kind of package: tube Collector current: 15A Power dissipation: 75W Polarisation: bipolar Current gain: 20...150 Collector-emitter voltage: 80V Frequency: 5MHz Case: TO220AB | на замовлення 420 шт:термін постачання 21-30 дні (днів) | 
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|   | 2N6487G | ONSEMI |  Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 15A; 75W; TO220AB Mounting: THT Type of transistor: NPN Kind of package: tube Collector current: 15A Power dissipation: 75W Polarisation: bipolar Current gain: 20...150 Collector-emitter voltage: 60V Frequency: 5MHz Case: TO220AB | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| N01S830BAT22I | ONSEMI |  Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of memory: SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Memory organisation: 128kx8bit | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| N01S830BAT22IT | ONSEMI |  Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of memory: SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Memory organisation: 128kx8bit | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| FOD3184SD | ONSEMI |  Category: Unclassified Description: FOD3184SD | на замовлення 1000 шт:термін постачання 21-30 дні (днів) | 
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| NVMFS6H818NWFT1G | ONSEMI |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFNW5 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar On-state resistance: 3.7mΩ Gate-source voltage: ±20V Power dissipation: 68W Drain-source voltage: 80V Drain current: 123A Pulsed drain current: 900A Gate charge: 46nC Case: DFNW5 Kind of channel: enhancement Type of transistor: N-MOSFET | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| NTMFS6H818NLT1G | ONSEMI |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 70W; DFN5 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar On-state resistance: 3.2mΩ Gate-source voltage: ±20V Power dissipation: 70W Drain-source voltage: 80V Drain current: 135A Pulsed drain current: 772A Gate charge: 64nC Case: DFN5 Kind of channel: enhancement Type of transistor: N-MOSFET | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| NTMFS6H818NT1G | ONSEMI |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFN5 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar On-state resistance: 3.7mΩ Gate-source voltage: ±20V Power dissipation: 68W Drain-source voltage: 80V Drain current: 123A Pulsed drain current: 900A Gate charge: 46nC Case: DFN5 Kind of channel: enhancement Type of transistor: N-MOSFET | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| NVMFS6H818NLT1G | ONSEMI |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFN5 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar On-state resistance: 3.2mΩ Gate-source voltage: ±20V Power dissipation: 140W Drain-source voltage: 80V Drain current: 135A Pulsed drain current: 772A Gate charge: 64nC Case: DFN5 Kind of channel: enhancement Type of transistor: N-MOSFET | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| NVMFS6H818NLWFT1G | ONSEMI |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFNW5 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar On-state resistance: 3.2mΩ Gate-source voltage: ±20V Power dissipation: 140W Drain-source voltage: 80V Drain current: 135A Pulsed drain current: 772A Gate charge: 64nC Case: DFNW5 Kind of channel: enhancement Type of transistor: N-MOSFET | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| NVMFS6H818NT1G | ONSEMI |    Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5x6 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar On-state resistance: 3.7mΩ Gate-source voltage: ±20V Power dissipation: 68W Drain-source voltage: 80V Drain current: 87A Pulsed drain current: 900A Gate charge: 46nC Case: DFN5x6 Kind of channel: enhancement Type of transistor: N-MOSFET | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | MOC207M | ONSEMI |    Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8 Kind of output: transistor Case: SO8 Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 3.2µs Turn-off time: 4.7µs Number of channels: 1 CTR@If: 100-200%@10mA Insulation voltage: 2.5kV | на замовлення 642 шт:термін постачання 21-30 дні (днів) | 
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|   | MOC207R2M | ONSEMI |  Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8 Kind of output: transistor Case: SO8 Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 3.2µs Turn-off time: 4.7µs Number of channels: 1 CTR@If: 100-200%@10mA Insulation voltage: 2.5kV | на замовлення 122 шт:термін постачання 21-30 дні (днів) | 
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|   | MOC205M | ONSEMI |  Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8 Kind of output: transistor Case: SO8 Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 7.5µs Turn-off time: 5.7µs Number of channels: 1 Max. off-state voltage: 6V CTR@If: 40-80%@10mA Insulation voltage: 2.5kV | на замовлення 1252 шт:термін постачання 21-30 дні (днів) | 
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|   | MOC8106M | ONSEMI |  Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6 Kind of output: transistor Case: DIP6 Mounting: THT Type of optocoupler: optocoupler Turn-on time: 10µs Turn-off time: 10µs Number of channels: 1 Max. off-state voltage: 6V CTR@If: 50-150%@10mA Insulation voltage: 4.17kV | на замовлення 463 шт:термін постачання 21-30 дні (днів) | 
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|   | MOC206R2M | ONSEMI |  Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V Kind of output: transistor Case: SOIC8 Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 7.5µs Turn-off time: 5.7µs Number of channels: 1 Max. off-state voltage: 6V CTR@If: 63-125%@10mA Collector-emitter voltage: 30V Insulation voltage: 2.5kV Manufacturer series: MOC206M | на замовлення 2368 шт:термін постачання 21-30 дні (днів) | 
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|   | MOC8204M | ONSEMI |  Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 20%@10mA Case: DIP6 Turn-on time: 5µs Turn-off time: 5µs Max. off-state voltage: 6V | на замовлення 706 шт:термін постачання 21-30 дні (днів) | 
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|   | MOC211M | ONSEMI |  Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8 Kind of output: transistor Case: SO8 Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 7.5µs Turn-off time: 5.7µs Number of channels: 1 Max. off-state voltage: 6V CTR@If: 20%@10mA Insulation voltage: 2.5kV | на замовлення 314 шт:термін постачання 21-30 дні (днів) | 
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|   | MOC217M | ONSEMI |  Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8 Kind of output: transistor Case: SO8 Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 7.5µs Turn-off time: 5.7µs Number of channels: 1 Max. off-state voltage: 6V CTR@If: 100%@1mA Insulation voltage: 2.5kV | на замовлення 1461 шт:термін постачання 21-30 дні (днів) | 
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| MJD340RLG | ONSEMI |  Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| SZMMSZ5246BT1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| MMSZ5246ET1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxE | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| SZMMSZ5246ET1G | ONSEMI |  Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxE Application: automotive industry | товару немає в наявності | В кошику од. на суму грн. | 
| M74VHC1GT00DFT2G | 
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: TTL
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Quiescent current: 40µA
Number of inputs: 2
Kind of gate: NAND
    Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: TTL
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Quiescent current: 40µA
Number of inputs: 2
Kind of gate: NAND
на замовлення 1106 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 88+ | 4.88 грн | 
| 112+ | 3.56 грн | 
| 141+ | 2.84 грн | 
| 500+ | 2.41 грн | 
| SS23 |  | 
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
    Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 2276 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 36+ | 11.99 грн | 
| 37+ | 10.82 грн | 
| SS23FA |  | 
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
    Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| MJD340T4G |  | 
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
    Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
товару немає в наявності
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| NJVMJD340T4G |  | 
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
    Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
товару немає в наявності
    В кошику
     од. на суму     грн.
| VESNJVMJD340T4G | 
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 2500+ | 12.85 грн | 
| NVMFS5C673NLAFT1G |  | 
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BZX79C15-T50A |  | 
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
    Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
товару немає в наявності
    В кошику
     од. на суму     грн.
| BZX79C15-T50R |  | 
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; reel,tape; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
    Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; reel,tape; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
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| M74VHC1G126DTT1G |  | 
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
    Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 428.34 грн | 
| BZX84C5V6LT3G |  | 
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 10000+ | 1.18 грн | 
| S210 |  | 
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
    Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
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| S210FA |  | 
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
    Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
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| MUN5131DW1T1G |  | 
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
    Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
на замовлення 730 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 120+ | 3.68 грн | 
| 200+ | 2.03 грн | 
| 500+ | 1.80 грн | 
| 595+ | 1.58 грн | 
| SMUN5131DW1T1G |  | 
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
    Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
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| MM74HCT32M |  | 
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: tube
Supply voltage: 4.5...5.5V DC
    Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: tube
Supply voltage: 4.5...5.5V DC
на замовлення 264 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 10+ | 46.26 грн | 
| 13+ | 30.79 грн | 
| 25+ | 28.08 грн | 
| 36+ | 26.09 грн | 
| 99+ | 24.66 грн | 
| MC74HCT32ADR2G |  | 
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Delay time: 15ns
Kind of package: reel; tape
Supply voltage: 2...6V DC
    Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HCT
Delay time: 15ns
Kind of package: reel; tape
Supply voltage: 2...6V DC
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| MC74HCT32ADTR2G |  | 
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HCT
Kind of package: reel; tape
Supply voltage: 2...6V DC
Manufacturer series: HCT
    Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HCT
Kind of package: reel; tape
Supply voltage: 2...6V DC
Manufacturer series: HCT
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| MM74HCT32MTCX |  | 
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
    Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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| MM74HCT32MX |  | 
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
    Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Delay time: 10ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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| MM74HCT08M |  | 
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 1.4mA
Family: HCT
    Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 1.4mA
Family: HCT
на замовлення 165 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 11+ | 40.26 грн | 
| 16+ | 26.01 грн | 
| 25+ | 23.71 грн | 
| 46+ | 20.76 грн | 
| 110+ | 20.68 грн | 
| 124+ | 19.65 грн | 
| MC74HCT08ADR2G |  | 
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 15ns
    Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 15ns
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| MC74HCT08ADTR2G |  | 
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 15ns
    Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Delay time: 15ns
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| MM74HCT08MTCX |  | 
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 12ns
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: HCT
Delay time: 12ns
    Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 12ns
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: HCT
Delay time: 12ns
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| MM74HCT08MX |  | 
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: HCT
Delay time: 12ns
    Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: HCT
Delay time: 12ns
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| NLV74HCT08ADTR2G | 
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -55÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
    Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -55÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
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| NCP4305DDR2G |  | 
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: SO8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
    Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: SO8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
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| NCP4305DMNTWG |  | 
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: DFN8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
    Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: DFN8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
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| NCP4305DMTTWG |  | 
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: WDFN8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
    Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: WDFN8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
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| KSP10BU |  | 
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: TO92
Current gain: 60
Mounting: THT
Kind of package: bulk
Frequency: 650MHz
    Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: TO92
Current gain: 60
Mounting: THT
Kind of package: bulk
Frequency: 650MHz
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| MJ21196G |  | 
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Case: TO3
Power dissipation: 250W
Collector current: 16A
Collector-emitter voltage: 250V
Frequency: 4MHz
Kind of package: in-tray
Polarisation: bipolar
Mounting: THT
Type of transistor: NPN
    Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Case: TO3
Power dissipation: 250W
Collector current: 16A
Collector-emitter voltage: 250V
Frequency: 4MHz
Kind of package: in-tray
Polarisation: bipolar
Mounting: THT
Type of transistor: NPN
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| NZT7053 |  | 
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Kind of transistor: Darlington
Case: SOT223
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Collector current: 1.5A
Collector-emitter voltage: 100V
Frequency: 200MHz
Polarisation: bipolar
    Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Kind of transistor: Darlington
Case: SOT223
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Collector current: 1.5A
Collector-emitter voltage: 100V
Frequency: 200MHz
Polarisation: bipolar
на замовлення 3982 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 11+ | 40.26 грн | 
| 13+ | 32.85 грн | 
| 66+ | 14.32 грн | 
| 180+ | 13.52 грн | 
| 2000+ | 13.05 грн | 
| NDC7002N |  | 
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.51A
Gate charge: 1nC
Power dissipation: 0.96W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Case: SuperSOT-6
    Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.51A
Gate charge: 1nC
Power dissipation: 0.96W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Case: SuperSOT-6
на замовлення 3274 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 17+ | 26.56 грн | 
| 20+ | 20.21 грн | 
| 22+ | 18.38 грн | 
| 50+ | 14.56 грн | 
| 100+ | 13.21 грн | 
| 122+ | 7.64 грн | 
| 336+ | 7.24 грн | 
| SZBZX84C39LT1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
    Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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| NC7SZ18P6X |  | 
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: SC70
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: demultiplexer
    Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: SC70
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: demultiplexer
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| NL7SZ18MUR2G |  | 
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,demultiplexer; Ch: 2; CMOS; SMD; uDFN6
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 2
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: 3-state; demultiplexer
Technology: CMOS
    Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,demultiplexer; Ch: 2; CMOS; SMD; uDFN6
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 2
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: 3-state; demultiplexer
Technology: CMOS
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| MM3Z10VST1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
    Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 2270 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 59+ | 7.32 грн | 
| 107+ | 3.74 грн | 
| 168+ | 2.37 грн | 
| 200+ | 2.06 грн | 
| 500+ | 1.69 грн | 
| 822+ | 1.14 грн | 
| 2257+ | 1.07 грн | 
| 2N6491G |  |  | 
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB
Mounting: THT
Type of transistor: PNP
Kind of package: tube
Collector current: 15A
Power dissipation: 75W
Polarisation: bipolar
Current gain: 20...150
Collector-emitter voltage: 80V
Frequency: 5MHz
Case: TO220AB
    Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB
Mounting: THT
Type of transistor: PNP
Kind of package: tube
Collector current: 15A
Power dissipation: 75W
Polarisation: bipolar
Current gain: 20...150
Collector-emitter voltage: 80V
Frequency: 5MHz
Case: TO220AB
на замовлення 420 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 5+ | 90.81 грн | 
| 6+ | 67.30 грн | 
| 10+ | 60.54 грн | 
| 26+ | 36.99 грн | 
| 70+ | 35.00 грн | 
| 2N6487G |  | 
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 15A; 75W; TO220AB
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 15A
Power dissipation: 75W
Polarisation: bipolar
Current gain: 20...150
Collector-emitter voltage: 60V
Frequency: 5MHz
Case: TO220AB
    Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 15A; 75W; TO220AB
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 15A
Power dissipation: 75W
Polarisation: bipolar
Current gain: 20...150
Collector-emitter voltage: 60V
Frequency: 5MHz
Case: TO220AB
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| N01S830BAT22I |  | 
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
    Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
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| N01S830BAT22IT |  | 
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
    Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
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| FOD3184SD |  | 
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 1000+ | 59.11 грн | 
| NVMFS6H818NWFT1G |  | 
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFNW5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFNW5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| NTMFS6H818NLT1G |  | 
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 70W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 70W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 70W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 70W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| NTMFS6H818NT1G |  | 
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| NVMFS6H818NLT1G |  | 
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| NVMFS6H818NLWFT1G |  | 
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFNW5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFNW5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| NVMFS6H818NT1G |    | 
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5x6
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 87A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
    Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5x6
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 87A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| MOC207M |  |  | 
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
    Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
на замовлення 642 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 8+ | 57.40 грн | 
| 13+ | 32.69 грн | 
| 35+ | 26.81 грн | 
| 96+ | 25.38 грн | 
| 250+ | 24.58 грн | 
| 500+ | 24.34 грн | 
| MOC207R2M |  | 
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
    Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
на замовлення 122 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 8+ | 56.54 грн | 
| 11+ | 37.71 грн | 
| 37+ | 25.93 грн | 
| 100+ | 24.50 грн | 
| MOC205M |  | 
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 40-80%@10mA
Insulation voltage: 2.5kV
    Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 40-80%@10mA
Insulation voltage: 2.5kV
на замовлення 1252 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 11+ | 41.98 грн | 
| 16+ | 26.33 грн | 
| 50+ | 23.23 грн | 
| 56+ | 16.86 грн | 
| 153+ | 15.91 грн | 
| MOC8106M |  | 
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Kind of output: transistor
Case: DIP6
Mounting: THT
Type of optocoupler: optocoupler
Turn-on time: 10µs
Turn-off time: 10µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 50-150%@10mA
Insulation voltage: 4.17kV
    Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Kind of output: transistor
Case: DIP6
Mounting: THT
Type of optocoupler: optocoupler
Turn-on time: 10µs
Turn-off time: 10µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 50-150%@10mA
Insulation voltage: 4.17kV
на замовлення 463 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 11+ | 41.12 грн | 
| 20+ | 20.21 грн | 
| 25+ | 18.22 грн | 
| 55+ | 17.02 грн | 
| 100+ | 16.15 грн | 
| 151+ | 16.07 грн | 
| MOC206R2M |  | 
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V
Kind of output: transistor
Case: SOIC8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 63-125%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Manufacturer series: MOC206M
    Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V
Kind of output: transistor
Case: SOIC8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 63-125%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Manufacturer series: MOC206M
на замовлення 2368 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 12+ | 35.98 грн | 
| 16+ | 25.22 грн | 
| 48+ | 19.73 грн | 
| 100+ | 19.65 грн | 
| 131+ | 18.69 грн | 
| 500+ | 18.38 грн | 
| MOC8204M |  | 
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Case: DIP6
Turn-on time: 5µs
Turn-off time: 5µs
Max. off-state voltage: 6V
    Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Case: DIP6
Turn-on time: 5µs
Turn-off time: 5µs
Max. off-state voltage: 6V
на замовлення 706 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 6+ | 75.39 грн | 
| 10+ | 48.21 грн | 
| 22+ | 43.43 грн | 
| 50+ | 40.01 грн | 
| 100+ | 39.46 грн | 
| MOC211M |  | 
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 20%@10mA
Insulation voltage: 2.5kV
    Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 20%@10mA
Insulation voltage: 2.5kV
на замовлення 314 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 8+ | 56.54 грн | 
| 14+ | 28.96 грн | 
| 25+ | 26.17 грн | 
| 41+ | 23.15 грн | 
| 112+ | 21.88 грн | 
| MOC217M |  | 
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100%@1mA
Insulation voltage: 2.5kV
    Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100%@1mA
Insulation voltage: 2.5kV
на замовлення 1461 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна | 
|---|---|
| 8+ | 54.83 грн | 
| 14+ | 28.64 грн | 
| 25+ | 24.82 грн | 
| 100+ | 22.91 грн | 
| MJD340RLG |  | 
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
    Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
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| SZMMSZ5246BT1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
    Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| MMSZ5246ET1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
    Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
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| SZMMSZ5246ET1G |  | 
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
    Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
товару немає в наявності
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     од. на суму     грн.