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SS26 SS26 ONSEMI S210.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape; 1.3W
Mounting: SMD
Max. forward voltage: 0.7V
Power dissipation: 1.3W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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FDB120N10 ONSEMI fdb120n10-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDP120N10 ONSEMI fdp120n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 296A; 170W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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MM3Z18VST1G MM3Z18VST1G ONSEMI MM3ZxxST1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
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SZMM3Z18VST1G SZMM3Z18VST1G ONSEMI MM3ZxxST1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Application: automotive industry
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NV25512MUW3VTBG ONSEMI NV25512MUW-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Access time: 45ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
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CAT25512YI-GT3 ONSEMI CAT25512-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 20MHz
Interface: SPI
Memory organisation: 64kx8bit
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CAT25512HU5I-GT3 ONSEMI CAT25512-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 20MHz
Interface: SPI
Memory organisation: 64kx8bit
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CAT25512VI-GT3 CAT25512VI-GT3 ONSEMI cat25512.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; SO8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of interface: serial
Case: SO8
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
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CAV25512VE-GT3 ONSEMI CAV25512-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
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CAV25512YE-GT3 ONSEMI CAV25512-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
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NTB011N15MC ONSEMI ntb011n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W
Mounting: SMD
On-state resistance: 10.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 75.4A
Power dissipation: 136.4W
Pulsed drain current: 323A
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 37nC
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NVVR26A120M1WST ONSEMI nvvr26a120m1wst-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDA; screw,THT
Case: AHPM5-CDA
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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NVVR26A120M1WSB ONSEMI nvvr26a120m1wsb-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDE; screw,THT
Case: AHPM5-CDE
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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NVVR26A120M1WSS ONSEMI nvvr26a120m1wss-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDI; screw,THT
Case: AHPM5-CDI
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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NCP600SN330T1G ONSEMI ncp600-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOP5; SMD
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.125V
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
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NCP600SNADJT1G ONSEMI ncp600-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 150mA
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.15A
Number of channels: 1
Output voltage: 1.25...5V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
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1N5365BG 1N5365BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 523 шт:
термін постачання 21-30 дні (днів)
22+20.60 грн
25+17.30 грн
26+16.14 грн
100+12.39 грн
250+11.56 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
1N5365BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5342BG 1N5342BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
30+15.23 грн
32+13.23 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
1N5346BRLG 1N5346BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 7.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 7.5µA
на замовлення 5982 шт:
термін постачання 21-30 дні (днів)
17+27.77 грн
18+23.46 грн
20+20.96 грн
100+13.64 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
1N5353BG 1N5353BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
на замовлення 1468 шт:
термін постачання 21-30 дні (днів)
17+27.77 грн
21+20.05 грн
50+16.22 грн
100+14.72 грн
250+12.89 грн
500+11.98 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
1N5381BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 130V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 130V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
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NTMFS5H431NLT1G ONSEMI ntmfs5h431nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 600A; 26W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 106A
Pulsed drain current: 600A
Power dissipation: 26W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
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MJE15030 MJE15030 ONSEMI MJE15030.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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MJE15031G MJE15031G ONSEMI MJE15031G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 70MHz
на замовлення 403 шт:
термін постачання 21-30 дні (днів)
4+124.52 грн
10+68.21 грн
50+67.38 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJD44H11T4G MJD44H11T4G ONSEMI MJD44H11_MJD45H11.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
на замовлення 2379 шт:
термін постачання 21-30 дні (днів)
7+70.77 грн
10+44.75 грн
20+38.51 грн
50+31.61 грн
100+27.45 грн
500+20.46 грн
1000+19.80 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MJD44H11G MJD44H11G ONSEMI MJD44H11_MJD45H11.PDF description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
на замовлення 197 шт:
термін постачання 21-30 дні (днів)
5+91.38 грн
10+42.17 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJD44H11RLG MJD44H11RLG ONSEMI MJD44H11_MJD45H11.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
на замовлення 1668 шт:
термін постачання 21-30 дні (днів)
5+91.38 грн
10+61.31 грн
25+50.08 грн
50+42.84 грн
100+42.67 грн
Мінімальне замовлення: 5
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NJVMJD44H11RLG NJVMJD44H11RLG ONSEMI MJD44H11_MJD45H11.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Application: automotive industry
на замовлення 1549 шт:
термін постачання 21-30 дні (днів)
7+67.19 грн
10+46.67 грн
100+31.69 грн
500+29.11 грн
Мінімальне замовлення: 7
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MJD44H11-1G MJD44H11-1G ONSEMI MJD44H11-1G.PDF MJD44H11_MJD45H11.PDF description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
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NJVMJD44H11G ONSEMI mjd44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Application: automotive industry
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NJVMJD44H11T4G ONSEMI mjd44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
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D44H11G D44H11G ONSEMI D44H8G.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
на замовлення 265 шт:
термін постачання 21-30 дні (днів)
5+89.58 грн
10+52.49 грн
50+38.18 грн
100+37.52 грн
Мінімальне замовлення: 5
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MJF44H11G MJF44H11G ONSEMI MJF44H11G-DTE.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
3+169.31 грн
10+91.50 грн
Мінімальне замовлення: 3
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MJB44H11T4G ONSEMI mjb44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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MJB44H11G ONSEMI mjb44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
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KSE44H11 ONSEMI KSE44H.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
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NJW44H11G ONSEMI njw44h11-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
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NJVMJB44H11T4G ONSEMI mjb44h11-d.pdf ONSMS34461-1.pdf?t.download=true&u=5oefqw Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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MJD45H11T4G MJD45H11T4G ONSEMI MJD44H11_MJD45H11.PDF MJD44H11_MJD45H11.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
на замовлення 550 шт:
термін постачання 21-30 дні (днів)
7+70.77 грн
10+47.66 грн
25+39.43 грн
50+33.94 грн
100+29.36 грн
500+21.71 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MJD45H11G MJD45H11G ONSEMI MJD44H11_MJD45H11.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
на замовлення 261 шт:
термін постачання 21-30 дні (днів)
5+96.75 грн
10+53.40 грн
25+44.34 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJF45H11G MJF45H11G ONSEMI MJF44H11G-DTE.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: TO220FP
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
4+110.64 грн
10+81.52 грн
50+79.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
D45H11G ONSEMI d44h-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 40
Type of transistor: PNP
Case: TO220AB
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
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MJD45H11RLG ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
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MJB45H11G ONSEMI mjb44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
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MJB45H11T4G ONSEMI mjb44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
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MJD45H11-1G MJD45H11-1G ONSEMI MJD45H11-001G.PDF MJD44H11_MJD45H11.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
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NJVMJB45H11T4G ONSEMI mjb44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 50W
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NJVMJD45H11G ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
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NJVMJD45H11RLG ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
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NJVMJD45H11T4G ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
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FDB024N08BL7 ONSEMI fdb024n08bl7-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Pulsed drain current: 916A
Drain current: 162A
Gate charge: 178nC
On-state resistance: 2.4mΩ
Power dissipation: 246W
Gate-source voltage: ±20V
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
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FDMA1024NZ ONSEMI fdma1024nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 5A
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: WDFN6
Kind of channel: enhancement
Mounting: SMD
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FDME1024NZT
+1
FDME1024NZT ONSEMI FDME1024NZT.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Technology: PowerTrench®
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
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NTMFS024N06CT1G ONSEMI NTMFS024N06C-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 158A
Drain current: 17A
Gate charge: 5.7nC
On-state resistance: 22mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: DFN5x6
Kind of channel: enhancement
Mounting: SMD
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NVMFD024N06CT1G ONSEMI nvmfd024n06c-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 85A
Drain current: 24A
Gate charge: 5.7nC
On-state resistance: 22.6mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
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NVMFS024N06CT1G ONSEMI nvmfs024n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 158A
Drain current: 25A
Gate charge: 5.7nC
On-state resistance: 22mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
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NVTFS024N06CTAG ONSEMI nvtfs024n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 112A
Drain current: 24A
Gate charge: 5.7nC
On-state resistance: 22.6mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
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NTMFS4C024NT1G ONSEMI ntmfs4c024n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
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SS26 S210.pdf
SS26
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape; 1.3W
Mounting: SMD
Max. forward voltage: 0.7V
Power dissipation: 1.3W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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FDB120N10 fdb120n10-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDP120N10 fdp120n10-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 296A; 170W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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MM3Z18VST1G MM3ZxxST1G.PDF
MM3Z18VST1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
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SZMM3Z18VST1G MM3ZxxST1G.PDF
SZMM3Z18VST1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Application: automotive industry
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NV25512MUW3VTBG NV25512MUW-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Access time: 45ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
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CAT25512YI-GT3 CAT25512-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 20MHz
Interface: SPI
Memory organisation: 64kx8bit
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CAT25512HU5I-GT3 CAT25512-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 20MHz
Interface: SPI
Memory organisation: 64kx8bit
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CAT25512VI-GT3 cat25512.pdf
CAT25512VI-GT3
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; SO8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of interface: serial
Case: SO8
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
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CAV25512VE-GT3 CAV25512-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
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CAV25512YE-GT3 CAV25512-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
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NTB011N15MC ntb011n15mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W
Mounting: SMD
On-state resistance: 10.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 75.4A
Power dissipation: 136.4W
Pulsed drain current: 323A
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 37nC
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NVVR26A120M1WST nvvr26a120m1wst-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDA; screw,THT
Case: AHPM5-CDA
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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NVVR26A120M1WSB nvvr26a120m1wsb-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDE; screw,THT
Case: AHPM5-CDE
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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NVVR26A120M1WSS nvvr26a120m1wss-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDI; screw,THT
Case: AHPM5-CDI
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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NCP600SN330T1G ncp600-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOP5; SMD
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.125V
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
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NCP600SNADJT1G ncp600-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 150mA
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.15A
Number of channels: 1
Output voltage: 1.25...5V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
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1N5365BG 1N53xx.PDF
1N5365BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 523 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
22+20.60 грн
25+17.30 грн
26+16.14 грн
100+12.39 грн
250+11.56 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
1N5365BRLG 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5342BG 1N53xx.PDF
1N5342BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+15.23 грн
32+13.23 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
1N5346BRLG description 1N53xx.PDF
1N5346BRLG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 7.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 7.5µA
на замовлення 5982 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+27.77 грн
18+23.46 грн
20+20.96 грн
100+13.64 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
1N5353BG 1N53xx.PDF
1N5353BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
на замовлення 1468 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+27.77 грн
21+20.05 грн
50+16.22 грн
100+14.72 грн
250+12.89 грн
500+11.98 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
1N5381BRLG 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 130V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 130V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
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NTMFS5H431NLT1G ntmfs5h431nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 600A; 26W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 106A
Pulsed drain current: 600A
Power dissipation: 26W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
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MJE15030 MJE15030.PDF
MJE15030
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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MJE15031G MJE15031G.PDF
MJE15031G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 70MHz
на замовлення 403 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+124.52 грн
10+68.21 грн
50+67.38 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJD44H11T4G MJD44H11_MJD45H11.PDF
MJD44H11T4G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
на замовлення 2379 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+70.77 грн
10+44.75 грн
20+38.51 грн
50+31.61 грн
100+27.45 грн
500+20.46 грн
1000+19.80 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MJD44H11G description MJD44H11_MJD45H11.PDF
MJD44H11G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
на замовлення 197 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+91.38 грн
10+42.17 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJD44H11RLG MJD44H11_MJD45H11.PDF
MJD44H11RLG
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
на замовлення 1668 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+91.38 грн
10+61.31 грн
25+50.08 грн
50+42.84 грн
100+42.67 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NJVMJD44H11RLG MJD44H11_MJD45H11.PDF
NJVMJD44H11RLG
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Application: automotive industry
на замовлення 1549 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+67.19 грн
10+46.67 грн
100+31.69 грн
500+29.11 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MJD44H11-1G description MJD44H11-1G.PDF MJD44H11_MJD45H11.PDF
MJD44H11-1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
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NJVMJD44H11G mjd44h11-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Application: automotive industry
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NJVMJD44H11T4G mjd44h11-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
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D44H11G D44H8G.PDF
D44H11G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
на замовлення 265 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+89.58 грн
10+52.49 грн
50+38.18 грн
100+37.52 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJF44H11G MJF44H11G-DTE.PDF
MJF44H11G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+169.31 грн
10+91.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MJB44H11T4G mjb44h11-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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MJB44H11G mjb44h11-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
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KSE44H11 KSE44H.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
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NJW44H11G njw44h11-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
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NJVMJB44H11T4G mjb44h11-d.pdf ONSMS34461-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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MJD45H11T4G description MJD44H11_MJD45H11.PDF MJD44H11_MJD45H11.PDF
MJD45H11T4G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
на замовлення 550 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+70.77 грн
10+47.66 грн
25+39.43 грн
50+33.94 грн
100+29.36 грн
500+21.71 грн
Мінімальне замовлення: 7
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MJD45H11G description MJD44H11_MJD45H11.PDF
MJD45H11G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
на замовлення 261 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+96.75 грн
10+53.40 грн
25+44.34 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJF45H11G MJF44H11G-DTE.PDF
MJF45H11G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: TO220FP
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+110.64 грн
10+81.52 грн
50+79.03 грн
Мінімальне замовлення: 4
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D45H11G d44h-d.pdf
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 40
Type of transistor: PNP
Case: TO220AB
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
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MJD45H11RLG mjd44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
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MJB45H11G mjb44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
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MJB45H11T4G mjb44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
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MJD45H11-1G description MJD45H11-001G.PDF MJD44H11_MJD45H11.PDF
MJD45H11-1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
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NJVMJB45H11T4G mjb44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 50W
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NJVMJD45H11G mjd44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
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NJVMJD45H11RLG mjd44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
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NJVMJD45H11T4G mjd44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
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FDB024N08BL7 fdb024n08bl7-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Pulsed drain current: 916A
Drain current: 162A
Gate charge: 178nC
On-state resistance: 2.4mΩ
Power dissipation: 246W
Gate-source voltage: ±20V
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
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FDMA1024NZ fdma1024nz-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 5A
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: WDFN6
Kind of channel: enhancement
Mounting: SMD
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FDME1024NZT FDME1024NZT.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Technology: PowerTrench®
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
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NTMFS024N06CT1G NTMFS024N06C-D.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 158A
Drain current: 17A
Gate charge: 5.7nC
On-state resistance: 22mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: DFN5x6
Kind of channel: enhancement
Mounting: SMD
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NVMFD024N06CT1G nvmfd024n06c-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 85A
Drain current: 24A
Gate charge: 5.7nC
On-state resistance: 22.6mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
товару немає в наявності
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NVMFS024N06CT1G nvmfs024n06c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 158A
Drain current: 25A
Gate charge: 5.7nC
On-state resistance: 22mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
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NVTFS024N06CTAG nvtfs024n06c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 112A
Drain current: 24A
Gate charge: 5.7nC
On-state resistance: 22.6mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
товару немає в наявності
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NTMFS4C024NT1G ntmfs4c024n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
товару немає в наявності
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