| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| SJE1943 | onsemi |
Description: XSTR SIL PWR PLAS PNP Packaging: Bulk |
на замовлення 1750 шт: термін постачання 21-31 дні (днів) |
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FDS7060N7 | onsemi |
 Description: MOSFET N-CH 30V 19A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3274 pF @ 15 V |
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FDS7064N7 | onsemi |
Description: MOSFET N-CH 30V 16.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 16.5A, 4.5V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 15 V |
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FDS7064N7 | onsemi |
Description: MOSFET N-CH 30V 16.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 16.5A, 4.5V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 15 V |
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FDS7064N | onsemi |
Description: MOSFET N-CH 30V 16A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 4.5V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 15 V |
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FDS7064N | onsemi |
Description: MOSFET N-CH 30V 16A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 4.5V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 15 V |
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FDS7066ASN3 | onsemi |
Description: MOSFET N-CH 30V 19A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 19A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 15 V |
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FDS7082N3 | onsemi |
Description: MOSFET N-CH 30V 17.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 17.5A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2271 pF @ 15 V |
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FDS7088N7 | onsemi |
Description: MOSFET N-CH 30V 23A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 23A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V |
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FDS7096N3 | onsemi |
Description: MOSFET N-CH 30V 14A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1587 pF @ 15 V |
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FDS7098N3 | onsemi |
Description: MOSFET N-CH 30V 14A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1587 pF @ 15 V |
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FDS7296N3 | onsemi |
Description: MOSFET N-CH 30V 15A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 15 V |
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FDS7088SN3 | onsemi |
Description: MOSFET N-CH 30V 21A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 21A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V |
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CAT5111P-10 | onsemi |
Description: CAT5111 - 100-TAP DIGITALLY PROG Resistance (Ohms): 10k Tolerance: ±20% Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: 0°C ~ 70°C Number of Taps: 100 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-PDIP Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 1313 шт: термін постачання 21-31 дні (днів) |
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CAT5116LI | onsemi |
Description: CAT5116 - LOG-TAPER, 100-TAP DIG Resistance (Ohms): 32k Tolerance: ±20% Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 100 Voltage - Supply: 2.5V ~ 5.5V Taper: Logarithmic Supplier Device Package: 8-PDIP Resistance - Wiper (Ohms) (Typ): 200 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 441 шт: термін постачання 21-31 дні (днів) |
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| CAT5111VI-50 | onsemi |
Description: CAT5111 - 100-TAP DIGITALLY PROG Resistance (Ohms): 50k Tolerance: ±20% Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 100 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-SOIC Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 1127 шт: термін постачання 21-31 дні (днів) |
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CAT5111LI-50 | onsemi |
Description: CAT5111 - 100-TAP DIGITALLY PROG Resistance (Ohms): 50k Tolerance: ±20% Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 100 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-PDIP Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 539 шт: термін постачання 21-31 дні (днів) |
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CAT5111LI-00 | onsemi |
Description: CAT5111 - 100-TAP DIGITALLY PROG Resistance (Ohms): 100k Tolerance: ±20% Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 100 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-PDIP Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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LM393M | onsemi |
Description: IC COMPARATOR 2 DIFF 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: 0°C ~ 70°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 8-SOIC Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 18mA @ 5V |
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CAT24C05LGI | onsemi |
Description: IC EEPROM 4KBIT I2C 400KHZ 8DIP Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-PDIP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
на замовлення 13390 шт: термін постачання 21-31 дні (днів) |
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LM2576T-ADJ | onsemi |
 Description: IC REG BUCK ADJ 3A TO220-5Packaging: Tube Package / Case: TO-220-5 Output Type: Adjustable Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive or Negative Frequency - Switching: 52kHz Voltage - Input (Max): 40V Topology: Buck Supplier Device Package: TO-220-5 Synchronous Rectifier: No Voltage - Output (Max): 37V Voltage - Input (Min): 7V Voltage - Output (Min/Fixed): 1.23V |
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FFSH10120A | onsemi |
Description: DIODE SIL CARB 1.2KV 17A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 612pF @ 1V, 100kHz Current - Average Rectified (Io): 17A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 445 шт: термін постачання 21-31 дні (днів) |
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FFSH10120A-F155 | onsemi |
Description: DIODE SIL CARB 1.2KV 17A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 612pF @ 1V, 100kHz Current - Average Rectified (Io): 17A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
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FOD3180SV | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Packaging: Bulk Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 2.5A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: cUL, UL, VDE Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 75ns, 55ns Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Pulse Width Distortion (Max): 65ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 20V |
на замовлення 632 шт: термін постачання 21-31 дні (днів) |
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FOD3180SD | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 2.5A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: cUL, UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 75ns, 55ns Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Pulse Width Distortion (Max): 65ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 20V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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FOD3180SD | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 2.5A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: cUL, UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 75ns, 55ns Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Pulse Width Distortion (Max): 65ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 20V |
на замовлення 1208 шт: термін постачання 21-31 дні (днів) |
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MM74HC126MTCX | onsemi |
Description: IC BUFFER NON-INVERT 6V 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 14-TSSOP |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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MM74HC126MTCX | onsemi |
Description: IC BUFFER NON-INVERT 6V 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 14-TSSOP |
на замовлення 32495 шт: термін постачання 21-31 дні (днів) |
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MBR1060 | onsemi |
Description: DIODE SCHOTTKY 60V 10A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
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FAN7528M | onsemi |
Description: IC PFC CTRLR CRM/TRANSITION 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 12V ~ 23V Mode: Critical Conduction (CRM), Discontinuous (Transition) Supplier Device Package: 8-SOIC Current - Startup: 40 µA |
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FAN7528MX | onsemi |
Description: IC PFC CTRLR CRM/TRANSITION 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 12V ~ 23V Mode: Critical Conduction (CRM), Discontinuous (Transition) Supplier Device Package: 8-SOIC Current - Startup: 40 µA |
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FAN7528N | onsemi |
Description: IC PFC CTRLR CRM/TRANSITION 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C Voltage - Supply: 12V ~ 23V Mode: Critical Conduction (CRM), Discontinuous (Transition) Supplier Device Package: 8-DIP Current - Startup: 40 µA |
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MUR1510 | onsemi |
Description: DIODE GEN PURP 100V 15A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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MBRP3045NTU | onsemi |
Description: DIODE ARR SCHOTT 45V 15A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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MBRP3045NTU | onsemi |
Description: DIODE ARR SCHOTT 45V 15A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
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LM2902M | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14SOP Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 105°C Current - Input Bias: 90 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
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| MJEC15033TR | onsemi |
Description: IC Packaging: Bulk |
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FMS6363ACSX | onsemi |
Description: IC VIDEO DRIVER 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Driver Voltage - Supply: 4.75V ~ 5.25V Applications: Consumer Video Supplier Device Package: 8-SOIC |
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FMS6363ACSX | onsemi |
Description: IC VIDEO DRIVER 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Driver Voltage - Supply: 4.75V ~ 5.25V Applications: Consumer Video Supplier Device Package: 8-SOIC |
на замовлення 844 шт: термін постачання 21-31 дні (днів) |
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HCPL4503TM | onsemi |
Description: OPTOISO 5KV TRANS W/BASE 8DIP Packaging: Tube Package / Case: 8-DIP (0.400", 10.16mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-MDIP Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 250ns, 260ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
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MC74HC02AD | onsemi |
Description: IC GATE NOR 4CH 2-INP 14SOIC Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
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LC75822ED-E | onsemi |
Description: IC DRVR 53/104 SEGMENT 64QIPE Packaging: Tray Package / Case: 64-BQFP Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 53 Segment, 104 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 6.5V Supplier Device Package: 64-QIPE (14x14) |
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LC75822EHS-E | onsemi |
Description: IC DRVR 53/104 SEGMENT 64QIPE Packaging: Tray Package / Case: 64-BQFP Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 53 Segment, 104 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 6.5V Supplier Device Package: 64-QIPE (14x14) |
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LC75822EHS-T-E | onsemi |
Description: IC DRVR 53/104 SEGMENT 64QIPE Packaging: Tray Package / Case: 64-BQFP Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 53 Segment, 104 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 6.5V Supplier Device Package: 64-QIPE (14x14) |
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LC75822WD-E | onsemi |
Description: IC DRVR 53/104 SEGMENT 64SQFP Packaging: Tray Package / Case: 64-LQFP Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 53 Segment, 104 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 6.5V Supplier Device Package: 64-SQFP (10x10) |
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NTST30U100CTG | onsemi |
Description: DIODE ARR SCHOTT 100V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A Current - Reverse Leakage @ Vr: 675 µA @ 100 V |
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NCP1239LD100R2G | onsemi |
Description: NCP1239L, 100KHZ Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Duty Cycle: 80% Frequency - Switching: 100kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback, Secondary Side SR Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V Supplier Device Package: 7-SOIC Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V Control Features: EN, Frequency Control, Soft Start |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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NCP1239LD100R2G | onsemi |
Description: NCP1239L, 100KHZ Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Duty Cycle: 80% Frequency - Switching: 100kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback, Secondary Side SR Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V Supplier Device Package: 7-SOIC Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V Control Features: EN, Frequency Control, Soft Start |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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MUR8100E | onsemi |
Description: DIODE GEN PURP 1KV 8A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 25 µA @ 1000 V |
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NTD4810NHT4G | onsemi |
Description: MOSFET N-CH 30V 9A/54A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V Power Dissipation (Max): 1.28W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 12 V |
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FGHL50T65LQDT | onsemi |
Description: IGBT TRENCH FS 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/408ns Switching Energy: 510µJ (on), 880µJ (off) Test Condition: 400V, 25A, 4.7Ohm, 15V Gate Charge: 509 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 341 W |
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FGHL50T65LQDTL4 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/424ns Switching Energy: 410µJ (on), 860µJ (off) Test Condition: 400V, 50A, 4.7Ohm, 15V Gate Charge: 509 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 341 W |
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AFGHL50T65RQDN | onsemi |
Description: IGBT FIELD STOP 650V 78A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 57 ns Vce(on) (Max) @ Vge, Ic: 1.81V @ 50A, 15V Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 41ns/76ns Switching Energy: 3.09mJ (on), 830µJ (off) Test Condition: 400V, 50A, 2.5Ohm, 15V Gate Charge: 65 nC Grade: Automotive Current - Collector (Ic) (Max): 78 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 346 W Qualification: AEC-Q101 |
на замовлення 420 шт: термін постачання 21-31 дні (днів) |
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D44H8 | onsemi |
Description: TRANS NPN 60V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
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NVMFS5C426NWFET1G | onsemi |
Description: T6-40V N 1.3 MOHMS SL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Qualification: AEC-Q101 |
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NVMFS5C426NWFET1G | onsemi |
Description: T6-40V N 1.3 MOHMS SL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Qualification: AEC-Q101 |
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NTMFS5C426NT3G | onsemi |
Description: MOSFET N-CH 40V 41A/235A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V |
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NTMFS5C426NT3G | onsemi |
Description: MOSFET N-CH 40V 41A/235A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V |
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| AR0330CS1C12SPKAH-GEVB | onsemi |
Description: BOARD EVAL 3 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0330CS Supplied Contents: Board(s) |
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| ASX351ATSC00XPKAH3-GEVB | onsemi |
Description: BOARD EVAL VGA 1/5 CIS SOC 0 DEG Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: ASX351AT Supplied Contents: Board(s) |
товар відсутній |
| SJE1943 |
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 650+ | 30.31 грн |
| FDS7060N7 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 19A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3274 pF @ 15 V
Description: MOSFET N-CH 30V 19A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3274 pF @ 15 V
товар відсутній
| FDS7064N7 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 16.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16.5A, 4.5V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 15 V
Description: MOSFET N-CH 30V 16.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16.5A, 4.5V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 15 V
товар відсутній
| FDS7064N7 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 16.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16.5A, 4.5V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 15 V
Description: MOSFET N-CH 30V 16.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16.5A, 4.5V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 15 V
товар відсутній
| FDS7064N |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 4.5V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 15 V
Description: MOSFET N-CH 30V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 4.5V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 15 V
товар відсутній
| FDS7064N |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 4.5V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 15 V
Description: MOSFET N-CH 30V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 4.5V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3355 pF @ 15 V
товар відсутній
| FDS7066ASN3 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 19A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 19A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 15 V
Description: MOSFET N-CH 30V 19A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 19A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 15 V
товар відсутній
| FDS7082N3 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 17.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 17.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2271 pF @ 15 V
Description: MOSFET N-CH 30V 17.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 17.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2271 pF @ 15 V
товар відсутній
| FDS7088N7 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 23A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 23A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V
Description: MOSFET N-CH 30V 23A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 23A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V
товар відсутній
| FDS7096N3 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 14A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1587 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1587 pF @ 15 V
товар відсутній
| FDS7098N3 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1587 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1587 pF @ 15 V
товар відсутній
| FDS7296N3 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 15 V
Description: MOSFET N-CH 30V 15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 15 V
товар відсутній
| FDS7088SN3 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 21A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 21A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V
Description: MOSFET N-CH 30V 21A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 21A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V
товар відсутній
| CAT5111P-10 |
Виробник: onsemi
Description: CAT5111 - 100-TAP DIGITALLY PROG
Resistance (Ohms): 10k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: 0°C ~ 70°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: CAT5111 - 100-TAP DIGITALLY PROG
Resistance (Ohms): 10k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: 0°C ~ 70°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 1313 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 317+ | 62.55 грн |
| CAT5116LI |
Виробник: onsemi
Description: CAT5116 - LOG-TAPER, 100-TAP DIG
Resistance (Ohms): 32k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 5.5V
Taper: Logarithmic
Supplier Device Package: 8-PDIP
Resistance - Wiper (Ohms) (Typ): 200
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: CAT5116 - LOG-TAPER, 100-TAP DIG
Resistance (Ohms): 32k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 5.5V
Taper: Logarithmic
Supplier Device Package: 8-PDIP
Resistance - Wiper (Ohms) (Typ): 200
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 441 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 237+ | 83.62 грн |
| CAT5111VI-50 |
Виробник: onsemi
Description: CAT5111 - 100-TAP DIGITALLY PROG
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-SOIC
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: CAT5111 - 100-TAP DIGITALLY PROG
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-SOIC
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 1127 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 198+ | 100.08 грн |
| CAT5111LI-50 |
Виробник: onsemi
Description: CAT5111 - 100-TAP DIGITALLY PROG
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: CAT5111 - 100-TAP DIGITALLY PROG
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 539 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 195+ | 101.39 грн |
| CAT5111LI-00 |
Виробник: onsemi
Description: CAT5111 - 100-TAP DIGITALLY PROG
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: CAT5111 - 100-TAP DIGITALLY PROG
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 195+ | 101.39 грн |
| LM393M |
|
Виробник: onsemi
Description: IC COMPARATOR 2 DIFF 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SOIC
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Description: IC COMPARATOR 2 DIFF 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SOIC
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
товар відсутній
| CAT24C05LGI |
|
Виробник: onsemi
Description: IC EEPROM 4KBIT I2C 400KHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT I2C 400KHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
на замовлення 13390 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2049+ | 9.88 грн |
| LM2576T-ADJ | |
|
Виробник: onsemi
Description: IC REG BUCK ADJ 3A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Output (Max): 37V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1.23V
Description: IC REG BUCK ADJ 3A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 52kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Output (Max): 37V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1.23V
товар відсутній
| FFSH10120A |
|
Виробник: onsemi
Description: DIODE SIL CARB 1.2KV 17A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 17A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 445 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 463.91 грн |
| 10+ | 382.91 грн |
| 100+ | 319.09 грн |
| FFSH10120A-F155 |
|
Виробник: onsemi
Description: DIODE SIL CARB 1.2KV 17A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 17A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 180 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 523.7 грн |
| 10+ | 432.3 грн |
| 100+ | 360.24 грн |
| FOD3180SV |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL, VDE
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL, VDE
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
на замовлення 632 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.26 грн |
| 10+ | 136.38 грн |
| 100+ | 111.71 грн |
| FOD3180SD |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 81.53 грн |
| FOD3180SD |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
на замовлення 1208 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.58 грн |
| 10+ | 131.31 грн |
| 100+ | 101.06 грн |
| 500+ | 85.74 грн |
| MM74HC126MTCX |
|
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 14-TSSOP
Description: IC BUFFER NON-INVERT 6V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 14-TSSOP
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 13.84 грн |
| 5000+ | 12.41 грн |
| 12500+ | 11.77 грн |
| 25000+ | 10.78 грн |
| MM74HC126MTCX |
|
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 14-TSSOP
Description: IC BUFFER NON-INVERT 6V 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 14-TSSOP
на замовлення 32495 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 41.78 грн |
| 10+ | 34.48 грн |
| 25+ | 32.19 грн |
| 100+ | 22.43 грн |
| 250+ | 18.98 грн |
| 500+ | 18.12 грн |
| 1000+ | 13.15 грн |
| MBR1060 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
товар відсутній
| FAN7528M |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM/TRANSITION 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 23V
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Supplier Device Package: 8-SOIC
Current - Startup: 40 µA
Description: IC PFC CTRLR CRM/TRANSITION 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 23V
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Supplier Device Package: 8-SOIC
Current - Startup: 40 µA
товар відсутній
| FAN7528MX |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM/TRANSITION 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 23V
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Supplier Device Package: 8-SOIC
Current - Startup: 40 µA
Description: IC PFC CTRLR CRM/TRANSITION 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 23V
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Supplier Device Package: 8-SOIC
Current - Startup: 40 µA
товар відсутній
| FAN7528N |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM/TRANSITION 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 23V
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Supplier Device Package: 8-DIP
Current - Startup: 40 µA
Description: IC PFC CTRLR CRM/TRANSITION 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 23V
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Supplier Device Package: 8-DIP
Current - Startup: 40 µA
товар відсутній
| MUR1510 |
|
Виробник: onsemi
Description: DIODE GEN PURP 100V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
| MBRP3045NTU |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 45V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| MBRP3045NTU |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 45V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
товар відсутній
| LM2902M |
|
Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
товар відсутній
| FMS6363ACSX |
|
Виробник: onsemi
Description: IC VIDEO DRIVER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 8-SOIC
Description: IC VIDEO DRIVER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 8-SOIC
товар відсутній
| FMS6363ACSX |
|
Виробник: onsemi
Description: IC VIDEO DRIVER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 8-SOIC
Description: IC VIDEO DRIVER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 8-SOIC
на замовлення 844 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 36.74 грн |
| 10+ | 30.52 грн |
| 25+ | 28.47 грн |
| 100+ | 19.86 грн |
| 250+ | 16.8 грн |
| 500+ | 16.04 грн |
| HCPL4503TM |
|
Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-MDIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 5KV TRANS W/BASE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-MDIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товар відсутній
| MC74HC02AD | |
|
Виробник: onsemi
Description: IC GATE NOR 4CH 2-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NOR 4CH 2-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
товар відсутній
| LC75822ED-E |
Виробник: onsemi
Description: IC DRVR 53/104 SEGMENT 64QIPE
Packaging: Tray
Package / Case: 64-BQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 53 Segment, 104 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6.5V
Supplier Device Package: 64-QIPE (14x14)
Description: IC DRVR 53/104 SEGMENT 64QIPE
Packaging: Tray
Package / Case: 64-BQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 53 Segment, 104 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6.5V
Supplier Device Package: 64-QIPE (14x14)
товар відсутній
| LC75822EHS-E |
Виробник: onsemi
Description: IC DRVR 53/104 SEGMENT 64QIPE
Packaging: Tray
Package / Case: 64-BQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 53 Segment, 104 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6.5V
Supplier Device Package: 64-QIPE (14x14)
Description: IC DRVR 53/104 SEGMENT 64QIPE
Packaging: Tray
Package / Case: 64-BQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 53 Segment, 104 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6.5V
Supplier Device Package: 64-QIPE (14x14)
товар відсутній
| LC75822EHS-T-E |
Виробник: onsemi
Description: IC DRVR 53/104 SEGMENT 64QIPE
Packaging: Tray
Package / Case: 64-BQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 53 Segment, 104 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6.5V
Supplier Device Package: 64-QIPE (14x14)
Description: IC DRVR 53/104 SEGMENT 64QIPE
Packaging: Tray
Package / Case: 64-BQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 53 Segment, 104 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6.5V
Supplier Device Package: 64-QIPE (14x14)
товар відсутній
| LC75822WD-E |
Виробник: onsemi
Description: IC DRVR 53/104 SEGMENT 64SQFP
Packaging: Tray
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 53 Segment, 104 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6.5V
Supplier Device Package: 64-SQFP (10x10)
Description: IC DRVR 53/104 SEGMENT 64SQFP
Packaging: Tray
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 53 Segment, 104 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6.5V
Supplier Device Package: 64-SQFP (10x10)
товар відсутній
| NTST30U100CTG |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 675 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 675 µA @ 100 V
товар відсутній
| NCP1239LD100R2G |
|
Виробник: onsemi
Description: NCP1239L, 100KHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 100kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: EN, Frequency Control, Soft Start
Description: NCP1239L, 100KHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 100kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: EN, Frequency Control, Soft Start
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 26.56 грн |
| 5000+ | 24.62 грн |
| 12500+ | 23.85 грн |
| 25000+ | 22.34 грн |
| NCP1239LD100R2G |
|
Виробник: onsemi
Description: NCP1239L, 100KHZ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 100kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: EN, Frequency Control, Soft Start
Description: NCP1239L, 100KHZ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 100kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: EN, Frequency Control, Soft Start
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.55 грн |
| 10+ | 56.74 грн |
| 25+ | 53.86 грн |
| 100+ | 38.81 грн |
| 250+ | 34.29 грн |
| 500+ | 32.49 грн |
| 1000+ | 24.86 грн |
| MUR8100E |
|
Виробник: onsemi
Description: DIODE GEN PURP 1KV 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Description: DIODE GEN PURP 1KV 8A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
товар відсутній
| NTD4810NHT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 9A/54A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 12 V
Description: MOSFET N-CH 30V 9A/54A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 12 V
товар відсутній
| FGHL50T65LQDT |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/408ns
Switching Energy: 510µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 4.7Ohm, 15V
Gate Charge: 509 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 341 W
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/408ns
Switching Energy: 510µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 4.7Ohm, 15V
Gate Charge: 509 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 341 W
товар відсутній
| FGHL50T65LQDTL4 |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/424ns
Switching Energy: 410µJ (on), 860µJ (off)
Test Condition: 400V, 50A, 4.7Ohm, 15V
Gate Charge: 509 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 341 W
Description: IGBT TRENCH FS 650V 80A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/424ns
Switching Energy: 410µJ (on), 860µJ (off)
Test Condition: 400V, 50A, 4.7Ohm, 15V
Gate Charge: 509 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 341 W
товар відсутній
| AFGHL50T65RQDN |
|
Виробник: onsemi
Description: IGBT FIELD STOP 650V 78A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 57 ns
Vce(on) (Max) @ Vge, Ic: 1.81V @ 50A, 15V
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 41ns/76ns
Switching Energy: 3.09mJ (on), 830µJ (off)
Test Condition: 400V, 50A, 2.5Ohm, 15V
Gate Charge: 65 nC
Grade: Automotive
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 346 W
Qualification: AEC-Q101
Description: IGBT FIELD STOP 650V 78A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 57 ns
Vce(on) (Max) @ Vge, Ic: 1.81V @ 50A, 15V
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 41ns/76ns
Switching Energy: 3.09mJ (on), 830µJ (off)
Test Condition: 400V, 50A, 2.5Ohm, 15V
Gate Charge: 65 nC
Grade: Automotive
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 346 W
Qualification: AEC-Q101
на замовлення 420 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 391.88 грн |
| 30+ | 298.91 грн |
| 120+ | 256.19 грн |
| D44H8 |
|
Виробник: onsemi
Description: TRANS NPN 60V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: TRANS NPN 60V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
товар відсутній
| NVMFS5C426NWFET1G |
Виробник: onsemi
Description: T6-40V N 1.3 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Qualification: AEC-Q101
Description: T6-40V N 1.3 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
| NVMFS5C426NWFET1G |
Виробник: onsemi
Description: T6-40V N 1.3 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Qualification: AEC-Q101
Description: T6-40V N 1.3 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
| NTMFS5C426NT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 41A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Description: MOSFET N-CH 40V 41A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
товар відсутній
| NTMFS5C426NT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 41A/235A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Description: MOSFET N-CH 40V 41A/235A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
товар відсутній
| AR0330CS1C12SPKAH-GEVB |
Виробник: onsemi
Description: BOARD EVAL 3 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0330CS
Supplied Contents: Board(s)
Description: BOARD EVAL 3 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0330CS
Supplied Contents: Board(s)
товар відсутній
| ASX351ATSC00XPKAH3-GEVB |
Виробник: onsemi
Description: BOARD EVAL VGA 1/5 CIS SOC 0 DEG
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: ASX351AT
Supplied Contents: Board(s)
Description: BOARD EVAL VGA 1/5 CIS SOC 0 DEG
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: ASX351AT
Supplied Contents: Board(s)
товар відсутній