| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
4N25SM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMDPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 500mV Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 2µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 5060 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
4N25TVM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIPPackaging: Bulk Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 500mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 2µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 777 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NSBA143EDXV6T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
|
NSBA143EDXV6T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NSBA143EDXV6T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SOT-563 |
на замовлення 45500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NSBA144WDXV6T1G | onsemi |
Description: TRANS 2PNP PREBIAS 0.5W SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
|
NSBA144WDXV6T1G | onsemi |
Description: TRANS 2PNP PREBIAS 0.5W SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NSVBA143ZDXV6T1G | onsemi |
Description: TRANS 2PNP BIPO 60V SOT564Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 52000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NSVBA143ZDXV6T1G | onsemi |
Description: TRANS 2PNP BIPO 60V SOT564Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 52000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTH4L045N065SC1 | onsemi |
Description: SILICON CARBIDE MOSFET, NCHANNELPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 8mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V |
на замовлення 89683 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTH4L025N065SC1 | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - 1Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 99A (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 15.5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 15 V |
на замовлення 167 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTH4L080N120SC1 | onsemi |
Description: SICFET N-CH 1200V 29A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V |
на замовлення 41300 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTH4L060N090SC1 | onsemi |
Description: SILICON CARBIDE MOSFET, NCHANNELPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 18V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V |
на замовлення 928 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NRVTS860PFST3G | onsemi |
Description: DIODE SCHOTTKY 60V 8A TO2773Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 870pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A Current - Reverse Leakage @ Vr: 70 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
|
NRVTS860PFST3G | onsemi |
Description: DIODE SCHOTTKY 60V 8A TO2773Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 870pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A Current - Reverse Leakage @ Vr: 70 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 4570 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NRTS1260PFST3G | onsemi |
Description: DIODE SCHOTTKY 60V 12A TO277-3Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1180pf @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A Current - Reverse Leakage @ Vr: 350 µA @ 60 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NRTS1260PFST3G | onsemi |
Description: DIODE SCHOTTKY 60V 12A TO277-3Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1180pf @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A Current - Reverse Leakage @ Vr: 350 µA @ 60 V |
на замовлення 9765 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NZT6717 | onsemi |
Description: TRANS NPN 80V 1.2A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Supplier Device Package: SOT-223-4 Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NZT6717 | onsemi |
Description: TRANS NPN 80V 1.2A SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V Supplier Device Package: SOT-223-4 Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDS6681Z-G | onsemi |
Description: MOSFET P-CH 30V 20A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
NC7SZ38P5X-L22057 | onsemi |
Description: IC GATE NAND 1CH 2-INP SC88ACurrent - Quiescent (Max): 2 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Supplier Device Package: SC-88A (SC-70-5/SOT-353) Number of Inputs: 2 Current - Output High, Low: -, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Features: Open Drain Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDS8978-F40 | onsemi |
Description: MOSFET 2N-CH 30V 7.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LB1845-E | onsemi |
Description: IC MOTOR DRIVER BIPOLAR 28HDIP Packaging: Box Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Bipolar Voltage - Load: 10V ~ 44.5V Supplier Device Package: 28-HDIP Motor Type - Stepper: Bipolar Step Resolution: 1/2, 1/4 |
на замовлення 46496 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
| LB1845L-E | onsemi |
Description: IC MOTOR DRIVER 28DIP Packaging: Tube Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad Mounting Type: Through Hole Supplier Device Package: 28-DIP |
на замовлення 11517 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
NCP1215DR2 | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 18V Supplier Device Package: 8-SOIC Voltage - Start Up: 12.5 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
NCP1215DR2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 18V Supplier Device Package: 8-SOIC Voltage - Start Up: 12.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NCP1215ASNT1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOPPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 18V Supplier Device Package: 6-TSOP Voltage - Start Up: 12.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
AR0130CSSM00SPCA0-DPBR | onsemi |
Description: CMOS IMAGE SENSOR 1.2 MP 1/3"Packaging: Tray Package / Case: 48-LCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-PLCC (11.43x11.43) Grade: Automotive Frames per Second: 45.0 Qualification: AEC-Q100 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
AR0130CSSC00SPCA0-DPBR | onsemi |
Description: IMAGE SENSOR RGB CMOSPackaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Frames per Second: 45.0 |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| LC824204-13YB-VH | onsemi |
Description: IC MICRO-USB SWITCH DETECT 25WLP Features: OVP Packaging: Bulk Package / Case: 25-WFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -30°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 5Ohm Supplier Device Package: 25-WLCSP (2.07x2.07) Voltage - Supply, Single (V+): 3V ~ 3.6V Multiplexer/Demultiplexer Circuit: 4:1 Number of Channels: 2 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
| LC824206XA-VH | onsemi |
Description: IC MICRO-USB SWITCH DETECT 25WLP Features: OVP Packaging: Bulk Package / Case: 25-XFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -30°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 4.7Ohm Supplier Device Package: 25-WLCSP (2.17x2.17) Voltage - Supply, Single (V+): 3.1V ~ 4.6V Multiplexer/Demultiplexer Circuit: 5:1 Number of Channels: 2 |
на замовлення 423630 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
NOIP1FN1300A-QTI | onsemi |
Description: IC IMAGE SENSOR 1.3MP 48LCCPackaging: Tray Package / Case: 48-LCC Type: CMOS Operating Temperature: -40°C ~ 85°C Pixel Size: 4.8µm x 4.8µm Supplier Device Package: 48-LCC (14.22x14.22) |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NOIP1SE5000A-QTI | onsemi |
Description: IC IMAGE SENSOR 5MP LVDS 84LCCPackaging: Tray Type: CMOS with Processor Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.8V ~ 3.3V Pixel Size: 4.8µm x 4.8µm Active Pixel Array: 2592H x 2048V Frames per Second: 100.0 |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0144CSSM20SUKA0-CPBR | onsemi |
Description: 1MP 1/4 CIS SOPackaging: Tray Package / Case: 69-WFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 69-ODCSP (5.55x5.57) Frames per Second: 60.0 |
на замовлення 1380 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0147ATSC00XUEG5-DRBR | onsemi |
Description: 1MP 1/4 CIS SOPackaging: Tray Package / Case: 89-LFBGA Type: CMOS Operating Temperature: -40°C ~ 110°C Voltage - Supply: 1.14V ~ 1.26V Pixel Size: 3µm x 3µm Active Pixel Array: 1344H x 968V Supplier Device Package: 89-IBGA (8x7) Frames per Second: 60.0 |
на замовлення 2625 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0330CM1C12SHKA0-CP | onsemi |
Description: IMAGE SENSORPackaging: Tray Package / Case: 64-VFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2304H x 1296V Supplier Device Package: 64-CSP (6.28x6.65) Frames per Second: 60.0 |
на замовлення 8070 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0134CSSM00SPCA0-DPBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Frames per Second: 54.0 |
на замовлення 1455 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
AR0135CS2M25SUEA0-DPBR | onsemi |
Description: IMAGE SENSOR 1MP 1/3 CIS SOPackaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) |
на замовлення 1015 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
AR0522SRSC09SURA0-DP | onsemi |
Description: IMAGE SENSOR CMOS 5MP 52PLCCPackaging: Tray Package / Case: 52-LCC Type: CMOS Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2592H x 1944V Supplier Device Package: 52-PLCC (12x12) Frames per Second: 60.0 |
на замовлення 2360 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0234CSSM00SUKA0-CP | onsemi |
Description: 2MP 1/3 CIS SOPackaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
на замовлення 166 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0234CSSM28SUKA0-CP | onsemi |
Description: 2MP 1/3 CIS SOPackaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
на замовлення 1655 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AR0234CSSC28SUKA0-CR | onsemi |
Description: 2MP 1/3 CIS SOPackaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
на замовлення 1954 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
NOIP2SN1300A-QTI | onsemi |
Description: IC IMAGE SENSOR 1.3MP 48LCCPackaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.8V ~ 3.3V Pixel Size: 4.8µm x 4.8µm Active Pixel Array: 1280H x 1024V Supplier Device Package: 48-LCC (14.22x14.22) Frames per Second: 43.0 |
на замовлення 413 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NFVA35065L42 | onsemi |
Description: ASPM27 V3 650V/50A (FOR TICO)Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2500Vrms Current: 50 A Voltage: 650 V |
на замовлення 431 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NSV60101DMTWTBG | onsemi |
Description: TRANS NPN DUAL 60V 1A 6WDFNPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.27W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: 6-WDFN (2x2) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NSV60101DMTWTBG | onsemi |
Description: TRANS NPN DUAL 60V 1A 6WDFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.27W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: 6-WDFN (2x2) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
NB3V60113G00MTR2G | onsemi |
Description: IC CLOCK GEN PLL 200MHZ 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Mounting Type: Surface Mount Output: LVCMOS, LVDS, HCSL Frequency - Max: 200MHz Input: LVCMOS, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.7V ~ 1.9V Ratio - Input:Output: 1:3 Differential - Input:Output: No/Yes Supplier Device Package: 8-WDFN (2x2) PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 2509 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NGTB75N60SWG | onsemi |
Description: IGBT 600V 100A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 110ns/270ns Switching Energy: 1.5mJ (on), 1mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 310 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 595 W |
на замовлення 894 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FDMF5085 | onsemi |
Description: MOSFET IPM 25V 108A 39-PWRVFQFNPackaging: Tape & Reel (TR) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Current: 108 A Voltage: 25 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FDMF5085 | onsemi |
Description: MOSFET IPM 25V 108A 39-PWRVFQFNPackaging: Cut Tape (CT) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Current: 108 A Voltage: 25 V |
на замовлення 8369 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC74AC138DT | onsemi |
Description: IC DECODER/DEMUX 1X3:8 16-TSSOPPackaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP |
на замовлення 12960 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FAN4800CMY | onsemi |
Description: IC PFC CTRLR CCM/DCM 84KHZ 16SOPPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 11V ~ 16.5V Frequency - Switching: 66kHz ~ 84kHz Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM) Supplier Device Package: 16-SOIC Current - Startup: 100 µA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC74ACT08DTR2 | onsemi |
Description: IC GATE AND 4CH 2-INP 14TSSOPPackaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| MC74ACT08DR2GH | onsemi |
Description: IC GATE AND 4CH 2-INP 14SOIC Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
на замовлення 4681 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
MBR3045WT | onsemi |
Description: DIODE ARR SCHOTT 45V 15A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
на замовлення 4097 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS2003M-TL-W | onsemi |
Description: DIODE SCHOTTKY 30V 2A 6MCPHPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Schottky Capacitance @ Vr, F: 75pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: 6-MCPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SB2003M-TL-W | onsemi |
Description: DIODE SCHOTTKY 30V 2A 6MCPHPackaging: Bulk Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Schottky Capacitance @ Vr, F: 75pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: 6-MCPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 30 µA @ 15 V |
на замовлення 213000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS2003M-TL-E | onsemi |
Description: DIODE SCHOTTKY 30V 2A 6MCPHPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Schottky Capacitance @ Vr, F: 75pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: 6-MCPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
74LVC541ADTR2G | onsemi |
Description: IC BUF NON-INVERT 3.6V 20TSSOP Packaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.2V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP |
на замовлення 11654 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NVMFS5C423NLAFT1G | onsemi |
Description: MOSFET N-CH 40V 31A/150A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
| 4N25SM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 5060 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.23 грн |
| 50+ | 27.15 грн |
| 100+ | 24.84 грн |
| 500+ | 19.43 грн |
| 1000+ | 18.15 грн |
| 2000+ | 17.07 грн |
| 5000+ | 15.63 грн |
| 4N25TVM |
![]() |
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 777 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 52.83 грн |
| 10+ | 35.07 грн |
| 100+ | 25.54 грн |
| 500+ | 19.99 грн |
| NSBA143EDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| NSBA143EDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
товару немає в наявності
В кошику
од. на суму грн.
| NSBA143EDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
на замовлення 45500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1872+ | 11.02 грн |
| NSBA144WDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| NSBA144WDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
товару немає в наявності
В кошику
од. на суму грн.
| NSVBA143ZDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP BIPO 60V SOT564
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP BIPO 60V SOT564
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 52000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 6.09 грн |
| 8000+ | 5.61 грн |
| 12000+ | 4.85 грн |
| 28000+ | 4.47 грн |
| NSVBA143ZDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP BIPO 60V SOT564
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP BIPO 60V SOT564
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 52000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.62 грн |
| 14+ | 22.82 грн |
| 100+ | 11.52 грн |
| 500+ | 8.82 грн |
| 1000+ | 6.54 грн |
| 2000+ | 5.50 грн |
| NTH4L045N065SC1 |
![]() |
Виробник: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
на замовлення 89683 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 631.57 грн |
| 30+ | 508.08 грн |
| 120+ | 493.22 грн |
| 510+ | 450.52 грн |
| NTH4L025N065SC1 |
![]() |
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 15 V
Description: SILICON CARBIDE (SIC) MOSFET - 1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 15 V
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1552.91 грн |
| 10+ | 1073.14 грн |
| 50+ | 893.11 грн |
| NTH4L080N120SC1 |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 29A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Description: SICFET N-CH 1200V 29A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
на замовлення 41300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 769.25 грн |
| 30+ | 449.67 грн |
| 120+ | 425.92 грн |
| 510+ | 380.20 грн |
| NTH4L060N090SC1 |
![]() |
Виробник: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 18V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 18V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V
на замовлення 928 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1043.81 грн |
| 30+ | 611.91 грн |
| 60+ | 565.12 грн |
| 120+ | 493.40 грн |
| 510+ | 448.93 грн |
| NRVTS860PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 870pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 870pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NRVTS860PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 8A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 870pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 8A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 870pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Qualification: AEC-Q101
на замовлення 4570 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.25 грн |
| 10+ | 56.04 грн |
| 100+ | 40.71 грн |
| 500+ | 29.80 грн |
| 1000+ | 26.01 грн |
| 2000+ | 24.82 грн |
| NRTS1260PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 12A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1180pf @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Description: DIODE SCHOTTKY 60V 12A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1180pf @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 27.60 грн |
| NRTS1260PFST3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 12A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1180pf @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Description: DIODE SCHOTTKY 60V 12A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1180pf @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
на замовлення 9765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.05 грн |
| 10+ | 59.58 грн |
| 100+ | 41.52 грн |
| 500+ | 31.36 грн |
| 1000+ | 28.87 грн |
| 2000+ | 26.75 грн |
| NZT6717 |
![]() |
Виробник: onsemi
Description: TRANS NPN 80V 1.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 1.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| NZT6717 |
![]() |
Виробник: onsemi
Description: TRANS NPN 80V 1.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 1.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| FDS6681Z-G |
Виробник: onsemi
Description: MOSFET P-CH 30V 20A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 20A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| NC7SZ38P5X-L22057 |
![]() |
Виробник: onsemi
Description: IC GATE NAND 1CH 2-INP SC88A
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Number of Inputs: 2
Current - Output High, Low: -, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Open Drain
Packaging: Tape & Reel (TR)
Description: IC GATE NAND 1CH 2-INP SC88A
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Number of Inputs: 2
Current - Output High, Low: -, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Open Drain
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FDS8978-F40 |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
товару немає в наявності
В кошику
од. на суму грн.
| LB1845-E |
Виробник: onsemi
Description: IC MOTOR DRIVER BIPOLAR 28HDIP
Packaging: Box
Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 10V ~ 44.5V
Supplier Device Package: 28-HDIP
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 28HDIP
Packaging: Box
Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 10V ~ 44.5V
Supplier Device Package: 28-HDIP
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4
на замовлення 46496 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 73+ | 289.77 грн |
| LB1845L-E |
Виробник: onsemi
Description: IC MOTOR DRIVER 28DIP
Packaging: Tube
Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad
Mounting Type: Through Hole
Supplier Device Package: 28-DIP
Description: IC MOTOR DRIVER 28DIP
Packaging: Tube
Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad
Mounting Type: Through Hole
Supplier Device Package: 28-DIP
на замовлення 11517 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 195+ | 107.79 грн |
| NCP1215DR2 |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 8-SOIC
Voltage - Start Up: 12.5 V
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 8-SOIC
Voltage - Start Up: 12.5 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NCP1215DR2G |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 8-SOIC
Voltage - Start Up: 12.5 V
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 8-SOIC
Voltage - Start Up: 12.5 V
товару немає в наявності
В кошику
од. на суму грн.
| NCP1215ASNT1G |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 6-TSOP
Voltage - Start Up: 12.5 V
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 6-TSOP
Voltage - Start Up: 12.5 V
товару немає в наявності
В кошику
од. на суму грн.
| AR0130CSSM00SPCA0-DPBR |
![]() |
Виробник: onsemi
Description: CMOS IMAGE SENSOR 1.2 MP 1/3"
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-PLCC (11.43x11.43)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Description: CMOS IMAGE SENSOR 1.2 MP 1/3"
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-PLCC (11.43x11.43)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1620.95 грн |
| 10+ | 1235.63 грн |
| 25+ | 1170.57 грн |
| 80+ | 945.97 грн |
| 440+ | 884.95 грн |
| AR0130CSSC00SPCA0-DPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 45.0
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 45.0
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1187.90 грн |
| 5+ | 1041.69 грн |
| 10+ | 1003.69 грн |
| 25+ | 899.37 грн |
| 50+ | 870.28 грн |
| 100+ | 843.59 грн |
| 500+ | 776.86 грн |
| LC824204-13YB-VH |
Виробник: onsemi
Description: IC MICRO-USB SWITCH DETECT 25WLP
Features: OVP
Packaging: Bulk
Package / Case: 25-WFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 5Ohm
Supplier Device Package: 25-WLCSP (2.07x2.07)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 4:1
Number of Channels: 2
Description: IC MICRO-USB SWITCH DETECT 25WLP
Features: OVP
Packaging: Bulk
Package / Case: 25-WFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 5Ohm
Supplier Device Package: 25-WLCSP (2.07x2.07)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 4:1
Number of Channels: 2
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 170+ | 123.19 грн |
| LC824206XA-VH |
Виробник: onsemi
Description: IC MICRO-USB SWITCH DETECT 25WLP
Features: OVP
Packaging: Bulk
Package / Case: 25-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 4.7Ohm
Supplier Device Package: 25-WLCSP (2.17x2.17)
Voltage - Supply, Single (V+): 3.1V ~ 4.6V
Multiplexer/Demultiplexer Circuit: 5:1
Number of Channels: 2
Description: IC MICRO-USB SWITCH DETECT 25WLP
Features: OVP
Packaging: Bulk
Package / Case: 25-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 4.7Ohm
Supplier Device Package: 25-WLCSP (2.17x2.17)
Voltage - Supply, Single (V+): 3.1V ~ 4.6V
Multiplexer/Demultiplexer Circuit: 5:1
Number of Channels: 2
на замовлення 423630 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 173+ | 121.79 грн |
| NOIP1FN1300A-QTI |
![]() |
Виробник: onsemi
Description: IC IMAGE SENSOR 1.3MP 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Pixel Size: 4.8µm x 4.8µm
Supplier Device Package: 48-LCC (14.22x14.22)
Description: IC IMAGE SENSOR 1.3MP 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Pixel Size: 4.8µm x 4.8µm
Supplier Device Package: 48-LCC (14.22x14.22)
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8671.50 грн |
| 5+ | 7774.68 грн |
| 10+ | 7560.31 грн |
| 25+ | 6854.10 грн |
| NOIP1SE5000A-QTI |
![]() |
Виробник: onsemi
Description: IC IMAGE SENSOR 5MP LVDS 84LCC
Packaging: Tray
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Frames per Second: 100.0
Description: IC IMAGE SENSOR 5MP LVDS 84LCC
Packaging: Tray
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Frames per Second: 100.0
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17802.47 грн |
| 5+ | 16073.21 грн |
| 10+ | 15674.00 грн |
| 42+ | 14028.63 грн |
| AR0144CSSM20SUKA0-CPBR |
![]() |
Виробник: onsemi
Description: 1MP 1/4 CIS SO
Packaging: Tray
Package / Case: 69-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 69-ODCSP (5.55x5.57)
Frames per Second: 60.0
Description: 1MP 1/4 CIS SO
Packaging: Tray
Package / Case: 69-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 69-ODCSP (5.55x5.57)
Frames per Second: 60.0
на замовлення 1380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 788.46 грн |
| AR0147ATSC00XUEG5-DRBR |
![]() |
Виробник: onsemi
Description: 1MP 1/4 CIS SO
Packaging: Tray
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 1.14V ~ 1.26V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1344H x 968V
Supplier Device Package: 89-IBGA (8x7)
Frames per Second: 60.0
Description: 1MP 1/4 CIS SO
Packaging: Tray
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 1.14V ~ 1.26V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1344H x 968V
Supplier Device Package: 89-IBGA (8x7)
Frames per Second: 60.0
на замовлення 2625 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1211.11 грн |
| 5+ | 1064.04 грн |
| 10+ | 1026.04 грн |
| 25+ | 926.78 грн |
| AR0330CM1C12SHKA0-CP |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 60.0
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 60.0
на замовлення 8070 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1254.34 грн |
| 5+ | 1100.74 грн |
| 10+ | 1060.88 грн |
| 25+ | 950.94 грн |
| 40+ | 929.95 грн |
| 80+ | 901.12 грн |
| 440+ | 826.22 грн |
| AR0134CSSM00SPCA0-DPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 54.0
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 54.0
на замовлення 1455 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1514.49 грн |
| 5+ | 1335.22 грн |
| 10+ | 1289.20 грн |
| 25+ | 1158.40 грн |
| 50+ | 1124.19 грн |
| AR0135CS2M25SUEA0-DPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
на замовлення 1015 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1874.70 грн |
| 5+ | 1653.11 грн |
| 10+ | 1596.61 грн |
| 25+ | 1435.00 грн |
| 50+ | 1391.65 грн |
| 100+ | 1351.88 грн |
| AR0522SRSC09SURA0-DP |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1920.33 грн |
| 5+ | 1693.96 грн |
| 10+ | 1636.07 грн |
| 25+ | 1470.53 грн |
| 50+ | 1426.15 грн |
| 100+ | 1385.43 грн |
| AR0234CSSM00SUKA0-CP |
![]() |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
на замовлення 166 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2332.57 грн |
| 5+ | 2060.10 грн |
| 10+ | 1990.96 грн |
| 25+ | 1790.94 грн |
| 50+ | 1737.90 грн |
| 100+ | 1689.24 грн |
| AR0234CSSM28SUKA0-CP |
![]() |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
на замовлення 1655 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2398.21 грн |
| 5+ | 2119.30 грн |
| 10+ | 2048.54 грн |
| 25+ | 1843.02 грн |
| 50+ | 1788.64 грн |
| 100+ | 1738.76 грн |
| AR0234CSSC28SUKA0-CR |
![]() |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
на замовлення 1954 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2728.80 грн |
| 5+ | 2414.68 грн |
| 10+ | 2335.44 грн |
| 25+ | 2102.72 грн |
| 50+ | 2041.84 грн |
| 100+ | 1985.96 грн |
| NOIP2SN1300A-QTI |
![]() |
Виробник: onsemi
Description: IC IMAGE SENSOR 1.3MP 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 48-LCC (14.22x14.22)
Frames per Second: 43.0
Description: IC IMAGE SENSOR 1.3MP 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 48-LCC (14.22x14.22)
Frames per Second: 43.0
на замовлення 413 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6827.21 грн |
| 5+ | 6106.62 грн |
| 10+ | 5932.10 грн |
| 25+ | 5371.22 грн |
| 64+ | 5192.05 грн |
| NFVA35065L42 |
![]() |
Виробник: onsemi
Description: ASPM27 V3 650V/50A (FOR TICO)
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 50 A
Voltage: 650 V
Description: ASPM27 V3 650V/50A (FOR TICO)
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 50 A
Voltage: 650 V
на замовлення 431 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2737.61 грн |
| 10+ | 2430.79 грн |
| 60+ | 2321.53 грн |
| 120+ | 1858.28 грн |
| 300+ | 1768.57 грн |
| NSV60101DMTWTBG |
![]() |
Виробник: onsemi
Description: TRANS NPN DUAL 60V 1A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
Description: TRANS NPN DUAL 60V 1A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.02 грн |
| NSV60101DMTWTBG |
![]() |
Виробник: onsemi
Description: TRANS NPN DUAL 60V 1A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
Description: TRANS NPN DUAL 60V 1A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.83 грн |
| 10+ | 37.38 грн |
| 100+ | 25.88 грн |
| 500+ | 20.29 грн |
| 1000+ | 17.27 грн |
| NB3V60113G00MTR2G |
Виробник: onsemi
Description: IC CLOCK GEN PLL 200MHZ 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN
Mounting Type: Surface Mount
Output: LVCMOS, LVDS, HCSL
Frequency - Max: 200MHz
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 1.9V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/Yes
Supplier Device Package: 8-WDFN (2x2)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GEN PLL 200MHZ 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN
Mounting Type: Surface Mount
Output: LVCMOS, LVDS, HCSL
Frequency - Max: 200MHz
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 1.9V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/Yes
Supplier Device Package: 8-WDFN (2x2)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 2509 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 549.92 грн |
| 10+ | 478.68 грн |
| 25+ | 456.36 грн |
| 100+ | 371.87 грн |
| 250+ | 355.16 грн |
| 500+ | 323.82 грн |
| 1000+ | 277.41 грн |
| NGTB75N60SWG |
![]() |
Виробник: onsemi
Description: IGBT 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
Description: IGBT 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
на замовлення 894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 291.85 грн |
| FDMF5085 |
![]() |
Виробник: onsemi
Description: MOSFET IPM 25V 108A 39-PWRVFQFN
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Current: 108 A
Voltage: 25 V
Description: MOSFET IPM 25V 108A 39-PWRVFQFN
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Current: 108 A
Voltage: 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 133.95 грн |
| FDMF5085 |
![]() |
Виробник: onsemi
Description: MOSFET IPM 25V 108A 39-PWRVFQFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Current: 108 A
Voltage: 25 V
Description: MOSFET IPM 25V 108A 39-PWRVFQFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Current: 108 A
Voltage: 25 V
на замовлення 8369 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 361.01 грн |
| 10+ | 230.94 грн |
| 100+ | 164.99 грн |
| 500+ | 148.17 грн |
| MC74AC138DT |
![]() |
Виробник: onsemi
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
на замовлення 12960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1137+ | 18.24 грн |
| FAN4800CMY |
![]() |
Виробник: onsemi
Description: IC PFC CTRLR CCM/DCM 84KHZ 16SOP
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 66kHz ~ 84kHz
Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM)
Supplier Device Package: 16-SOIC
Current - Startup: 100 µA
Description: IC PFC CTRLR CCM/DCM 84KHZ 16SOP
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 66kHz ~ 84kHz
Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM)
Supplier Device Package: 16-SOIC
Current - Startup: 100 µA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 319+ | 65.79 грн |
| MC74ACT08DTR2 |
![]() |
Виробник: onsemi
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2019+ | 10.20 грн |
| MC74ACT08DR2GH |
Виробник: onsemi
Description: IC GATE AND 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
на замовлення 4681 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 826+ | 24.49 грн |
| MBR3045WT |
![]() |
Виробник: onsemi
Description: DIODE ARR SCHOTT 45V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 4097 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 224+ | 93.79 грн |
| SS2003M-TL-W |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 6-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
Description: DIODE SCHOTTKY 30V 2A 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 6-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| SB2003M-TL-W |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A 6MCPH
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 6-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
Description: DIODE SCHOTTKY 30V 2A 6MCPH
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 6-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
на замовлення 213000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1298+ | 15.69 грн |
| SS2003M-TL-E |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 6-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
Description: DIODE SCHOTTKY 30V 2A 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 6-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| 74LVC541ADTR2G |
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Description: IC BUF NON-INVERT 3.6V 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
на замовлення 11654 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2184+ | 9.85 грн |
| NVMFS5C423NLAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 70.00 грн |
| 3000+ | 65.88 грн |































