Продукція > ONSEMI > Всі товари виробника ONSEMI (142561) > Сторінка 2344 з 2377

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SZNUP2105LT1G SZNUP2105LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF7227F2F500CE&compId=NUP2105L.PDF?ci_sign=9dc66564d4b677f2b3de9a2ee094de05e6905279 Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
на замовлення 1247 шт:
термін постачання 21-30 дні (днів)
39+11.19 грн
49+8.31 грн
58+6.91 грн
100+6.36 грн
250+5.71 грн
500+5.28 грн
1000+4.88 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
MLISZNUP2105LT1G ONSEMI Category: Unclassified
Description: MLISZNUP2105LT1G
на замовлення 120000 шт:
термін постачання 21-30 дні (днів)
3000+4.65 грн
Мінімальне замовлення: 3000
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RS1G RS1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB3B076CBCCAF80C7&compId=RS1x.pdf?ci_sign=3d4e89b20994d952e50b49ade03c5e22aeed0c79 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
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RS1GFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
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NRVHPRS1GFA NRVHPRS1GFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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RS1D RS1D ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB3B076CBCCAF80C7&compId=RS1x.pdf?ci_sign=3d4e89b20994d952e50b49ade03c5e22aeed0c79 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Reverse recovery time: 150ns
на замовлення 6740 шт:
термін постачання 21-30 дні (днів)
20+21.52 грн
24+16.78 грн
27+14.87 грн
100+9.11 грн
112+8.39 грн
250+7.67 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
RS1DFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.8A; 150ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.8A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Reverse recovery time: 150ns
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NRVTSA3100ET3G NRVTSA3100ET3G ONSEMI NRVTSA%28F%293100E_Feb2015.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.995V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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NSVMUN2233T1G ONSEMI dtc143z-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 7kΩ
Quantity in set/package: 3000pcs.
Current gain: 80...200
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MC74VHC157DR2G MC74VHC157DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63369DB0D20D3&compId=MC74VHC157-D.pdf?ci_sign=c6575c8bc0e00621da86d8d0573edbe34c76720e Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; SOIC16; VHC; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHC
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MC74VHC157DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63369DB0E60D3&compId=MC74VHC157-D.pdf?ci_sign=b357ce377a83924f96290118be7729a8a4fc01cb Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; TSSOP16; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHC
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NTLUS030N03CTAG ONSEMI ntlus030n03c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Pulsed drain current: 20A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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DFB2505 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2DE58CCA6C0DC&compId=DFB25xx.PDF?ci_sign=0025768ec370367b54c96533f8f4c4404717f10b Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 25A; Ifsm: 300A
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: TS-6P
Kind of package: tube
Max. forward voltage: 1.1V
Load current: 25A
Max. off-state voltage: 50V
Max. forward impulse current: 0.3kA
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FDMS0312AS ONSEMI FAIR-S-A0002363693-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 36W
Case: Power56
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Gate charge: 31nC
On-state resistance: 6.8mΩ
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 30V
Pulsed drain current: 100A
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NCV8412ASTT1G ONSEMI ncv8412-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.9A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5.9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 0.145Ω
Supply voltage: 12V
Application: automotive industry
Active logical level: low
Operating temperature: -40...150°C
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+50.78 грн
Мінімальне замовлення: 1000
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FDT4N50NZU ONSEMI fdt4n50nzu-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223
Mounting: SMD
Case: SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.1nC
Drain current: 2A
Power dissipation: 2W
Pulsed drain current: 6A
On-state resistance: 3Ω
Gate-source voltage: ±25V
Drain-source voltage: 500V
Kind of package: reel; tape
Kind of channel: enhancement
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74LCX07BQX ONSEMI ONSM-S-A0006341874-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; QFN14; LCX; -40÷85°C
Manufacturer series: LCX
Kind of output: open drain
Case: QFN14
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...85°C
Quiescent current: 10µA
Supply voltage: 2...5.5V DC
Number of channels: 6
Type of integrated circuit: digital
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MC74LCX07DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62D96E73340D3&compId=MC74LCX07-D.pdf?ci_sign=ed392a44015bf50d0772d7489976c7bafe263687 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; LCX; LCX
Manufacturer series: LCX
Kind of output: open drain
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: buffer; hex
Integrated circuit features: tolerates a voltage of 5V on the inputs
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 1.5...5.5V DC
Number of channels: 6
Technology: CMOS
Type of integrated circuit: digital
Family: LCX
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MBR0540 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DD7E2C76808745&compId=MBR0540.pdf?ci_sign=06cfd6d09330f27921e712f21e663bb50796f06a Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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NCP360MUTBG ONSEMI ncp360-d.pdf Category: Drivers - integrated circuits
Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
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NCP360SNAET1G ONSEMI ncp360-d.pdf Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
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NCP360SNT1G ONSEMI ncp360-d.pdf Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
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BAV102 BAV102 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BF9967F084D5A259&compId=BAV102.pdf?ci_sign=ea873c4b19b6cec231821b9da2f4869d811b5de2 Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Mounting: SMD
Capacitance: 5pF
Semiconductor structure: single diode
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.5A
Max. forward voltage: 1.25V
Power dissipation: 0.5W
Max. load current: 0.6A
Max. forward impulse current: 4A
Max. off-state voltage: 150V
Case: SOD80
Kind of package: reel; tape
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
94+4.00 грн
Мінімальне замовлення: 94
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NVMFWS3D0P04M8LT1G ONSEMI nvmfs3d0p04m8l-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS005P03P8ZT1G ONSEMI ntmfs005p03p8z-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -164A; Idm: -597A; 104W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -164A
Pulsed drain current: -597A
Power dissipation: 104W
Case: DFN5
Gate-source voltage: ±25V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS3D0P04M8LT1G ONSEMI nvmfs3d0p04m8l-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS6H801NLT1G ONSEMI ntmfs6h801nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS6H801NLT1G ONSEMI nvmfs6h801nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS6H801NLWFT1G ONSEMI nvmfs6h801nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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FOD4108 FOD4108 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CD7030C5B878749&compId=FOD4108.pdf?ci_sign=6b1a8a25b280c555355592b9dd8eade4fc547c22 Category: Optotriacs
Description: Optotriac; 5kV; triac; DIP6; Ch: 1; FOD4108; 10kV/μs; t(on): 60us
Case: DIP6
Mounting: THT
Type of optocoupler: optotriac
Kind of output: triac
Turn-off time: 52µs
Turn-on time: 60µs
Number of channels: 1
Insulation voltage: 5kV
Slew rate: 10kV/μs
Manufacturer series: FOD4108
на замовлення 935 шт:
термін постачання 21-30 дні (днів)
2+224.66 грн
6+171.04 грн
10+155.06 грн
Мінімальне замовлення: 2
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FGH50T65UPD ONSEMI fgh50t65upd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
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FGHL50T65MQD ONSEMI FGHL50T65MQD-D.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
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FGHL50T65LQDT ONSEMI fghl50t65lqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 509nC
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FGHL50T65MQDT ONSEMI fghl50t65mqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
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FGHL50T65SQDT ONSEMI fghl50t65sqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99.7nC
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AFGHL50T65RQDN ONSEMI afghl50t65rqdn-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Application: automotive industry
Power dissipation: 173W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 65nC
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AFGHL50T65SQ ONSEMI afghl50t65sq-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
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AFGHL50T65SQD ONSEMI afghl50t65sqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 102nC
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AFGHL50T65SQDC ONSEMI afghl50t65sqdc-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 119W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
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NTK3139PT1G NTK3139PT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE88A9F2322A70F33D1&compId=NTK3139P.pdf?ci_sign=ddf9913d6cf072dea7c3cccbb87c174eb1e9a7db Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.57A
Power dissipation: 0.45W
Case: SOT723
Gate-source voltage: ±6V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
28+15.49 грн
44+9.27 грн
57+7.11 грн
100+6.39 грн
268+3.52 грн
735+3.32 грн
Мінімальне замовлення: 28
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MC14050BDR2G MC14050BDR2G ONSEMI mc14049b-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 3...18V DC
Number of channels: 6
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MC14050BDTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627EE730D20D3&compId=MC14049B-D.pdf?ci_sign=d03075f30e075d7cab28bef2e7dc348b5d9f31bd Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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1N5355BRLG 1N5355BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 description Category: THT Zener diodes
Description: Diode: Zener; 5W; 18V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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NTTFS008N04CTAG ONSEMI nttfs008n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFN8
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 10nC
On-state resistance: 8.5mΩ
Power dissipation: 12W
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
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NVTFWS008N04CTAG ONSEMI nvtfs008n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFNW8
Case: WDFNW8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 10nC
On-state resistance: 8.5mΩ
Power dissipation: 12W
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
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NVH4L030N120M3S ONSEMI nvh4l030n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Case: TO247-4
Gate-source voltage: -3...18V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NTH4L030N120M3S ONSEMI nth4l030n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Case: TO247-4
Gate-source voltage: -10...22V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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FDT3N40TF FDT3N40TF ONSEMI fdt3n40-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NTBG030N120M3S ONSEMI NTBG030N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVBG030N120M3S ONSEMI NVBG030N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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CPH5524-TL-E ONSEMI cph5524-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 3A; 1.2W
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.2W
Case: CPH5
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 380MHz
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NCP45524IMNTWG-H ONSEMI ncp45524-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Active logical level: high
Kind of integrated circuit: high-side
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 31.7mΩ
Output current: 6A
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Type of integrated circuit: power switch
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NCP45524IMNTWG-L ONSEMI ncp45524-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Active logical level: low
Kind of integrated circuit: high-side
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 31.7mΩ
Output current: 6A
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Type of integrated circuit: power switch
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FOD2742B FOD2742B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5B6B7D1BF1C8A17&compId=FOD2742B.pdf?ci_sign=74f8dcfbcb772bee9845f7470abc064c594d128d description Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 2.5kV; SOIC8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-200%@10mA
Case: SOIC8
на замовлення 332 шт:
термін постачання 21-30 дні (днів)
6+85.21 грн
10+53.55 грн
25+51.95 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
LM2576D2TR4-012G ONSEMI lm2576-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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LM2576D2TR4-5G ONSEMI lm2576-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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LM2576D2T-15G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB6B91A2341E21&compId=LM2576-ON-DTE.PDF?ci_sign=57e1f2f97eaefef402f5ab6bda0669220b5107d8 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 18÷40VDC; Uout: 15VDC; 3A; D2PAK-5; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Topology: buck
Frequency: 42...63kHz
Operating temperature: -40...125°C
Number of channels: 1
Output current: 3A
Output voltage: 15V DC
Input voltage: 18...40V DC
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NCV8843MNR2G ONSEMI ncv8843-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DFN18; SMD; reel,tape; automotive industry
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Case: DFN18
Type of integrated circuit: PMIC
Mounting: SMD
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MOC3042M MOC3042M ONSEMI MOC3042M.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 1kV/μs
Manufacturer series: MOC304XM
на замовлення 2491 шт:
термін постачання 21-30 дні (днів)
7+62.84 грн
12+34.69 грн
25+29.65 грн
50+26.62 грн
100+23.98 грн
500+23.50 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MMBT5401 MMBT5401 ONSEMI MMBT5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
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SZNUP2105LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF7227F2F500CE&compId=NUP2105L.PDF?ci_sign=9dc66564d4b677f2b3de9a2ee094de05e6905279
SZNUP2105LT1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
на замовлення 1247 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.19 грн
49+8.31 грн
58+6.91 грн
100+6.36 грн
250+5.71 грн
500+5.28 грн
1000+4.88 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
MLISZNUP2105LT1G
Виробник: ONSEMI
Category: Unclassified
Description: MLISZNUP2105LT1G
на замовлення 120000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+4.65 грн
Мінімальне замовлення: 3000
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RS1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB3B076CBCCAF80C7&compId=RS1x.pdf?ci_sign=3d4e89b20994d952e50b49ade03c5e22aeed0c79
RS1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
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RS1GFA rs1afa-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
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NRVHPRS1GFA rs1afa-d.pdf
NRVHPRS1GFA
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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RS1D pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB3B076CBCCAF80C7&compId=RS1x.pdf?ci_sign=3d4e89b20994d952e50b49ade03c5e22aeed0c79
RS1D
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Reverse recovery time: 150ns
на замовлення 6740 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.52 грн
24+16.78 грн
27+14.87 грн
100+9.11 грн
112+8.39 грн
250+7.67 грн
Мінімальне замовлення: 20
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RS1DFA rs1afa-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.8A; 150ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.8A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Reverse recovery time: 150ns
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NRVTSA3100ET3G NRVTSA%28F%293100E_Feb2015.pdf
NRVTSA3100ET3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.995V
Max. load current: 6A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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NSVMUN2233T1G dtc143z-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 7kΩ
Quantity in set/package: 3000pcs.
Current gain: 80...200
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MC74VHC157DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63369DB0D20D3&compId=MC74VHC157-D.pdf?ci_sign=c6575c8bc0e00621da86d8d0573edbe34c76720e
MC74VHC157DR2G
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; SOIC16; VHC; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHC
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MC74VHC157DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63369DB0E60D3&compId=MC74VHC157-D.pdf?ci_sign=b357ce377a83924f96290118be7729a8a4fc01cb
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; TSSOP16; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHC
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NTLUS030N03CTAG ntlus030n03c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Pulsed drain current: 20A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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DFB2505 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2DE58CCA6C0DC&compId=DFB25xx.PDF?ci_sign=0025768ec370367b54c96533f8f4c4404717f10b
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 25A; Ifsm: 300A
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: TS-6P
Kind of package: tube
Max. forward voltage: 1.1V
Load current: 25A
Max. off-state voltage: 50V
Max. forward impulse current: 0.3kA
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FDMS0312AS FAIR-S-A0002363693-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 36W
Case: Power56
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Gate charge: 31nC
On-state resistance: 6.8mΩ
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 30V
Pulsed drain current: 100A
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NCV8412ASTT1G ncv8412-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.9A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5.9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 0.145Ω
Supply voltage: 12V
Application: automotive industry
Active logical level: low
Operating temperature: -40...150°C
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+50.78 грн
Мінімальне замовлення: 1000
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FDT4N50NZU fdt4n50nzu-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223
Mounting: SMD
Case: SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.1nC
Drain current: 2A
Power dissipation: 2W
Pulsed drain current: 6A
On-state resistance: 3Ω
Gate-source voltage: ±25V
Drain-source voltage: 500V
Kind of package: reel; tape
Kind of channel: enhancement
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74LCX07BQX ONSM-S-A0006341874-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; QFN14; LCX; -40÷85°C
Manufacturer series: LCX
Kind of output: open drain
Case: QFN14
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...85°C
Quiescent current: 10µA
Supply voltage: 2...5.5V DC
Number of channels: 6
Type of integrated circuit: digital
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MC74LCX07DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62D96E73340D3&compId=MC74LCX07-D.pdf?ci_sign=ed392a44015bf50d0772d7489976c7bafe263687
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; LCX; LCX
Manufacturer series: LCX
Kind of output: open drain
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: buffer; hex
Integrated circuit features: tolerates a voltage of 5V on the inputs
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 1.5...5.5V DC
Number of channels: 6
Technology: CMOS
Type of integrated circuit: digital
Family: LCX
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MBR0540 pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DD7E2C76808745&compId=MBR0540.pdf?ci_sign=06cfd6d09330f27921e712f21e663bb50796f06a
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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NCP360MUTBG ncp360-d.pdf
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
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NCP360SNAET1G ncp360-d.pdf
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
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NCP360SNT1G ncp360-d.pdf
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
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BAV102 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BF9967F084D5A259&compId=BAV102.pdf?ci_sign=ea873c4b19b6cec231821b9da2f4869d811b5de2
BAV102
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Mounting: SMD
Capacitance: 5pF
Semiconductor structure: single diode
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.5A
Max. forward voltage: 1.25V
Power dissipation: 0.5W
Max. load current: 0.6A
Max. forward impulse current: 4A
Max. off-state voltage: 150V
Case: SOD80
Kind of package: reel; tape
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
94+4.00 грн
Мінімальне замовлення: 94
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NVMFWS3D0P04M8LT1G nvmfs3d0p04m8l-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS005P03P8ZT1G ntmfs005p03p8z-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -164A; Idm: -597A; 104W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -164A
Pulsed drain current: -597A
Power dissipation: 104W
Case: DFN5
Gate-source voltage: ±25V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS3D0P04M8LT1G nvmfs3d0p04m8l-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS6H801NLT1G ntmfs6h801nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS6H801NLT1G nvmfs6h801nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS6H801NLWFT1G nvmfs6h801nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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FOD4108 pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CD7030C5B878749&compId=FOD4108.pdf?ci_sign=6b1a8a25b280c555355592b9dd8eade4fc547c22
FOD4108
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; triac; DIP6; Ch: 1; FOD4108; 10kV/μs; t(on): 60us
Case: DIP6
Mounting: THT
Type of optocoupler: optotriac
Kind of output: triac
Turn-off time: 52µs
Turn-on time: 60µs
Number of channels: 1
Insulation voltage: 5kV
Slew rate: 10kV/μs
Manufacturer series: FOD4108
на замовлення 935 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+224.66 грн
6+171.04 грн
10+155.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FGH50T65UPD fgh50t65upd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
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FGHL50T65MQD FGHL50T65MQD-D.PDF
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
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FGHL50T65LQDT fghl50t65lqdt-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 509nC
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FGHL50T65MQDT fghl50t65mqdt-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
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FGHL50T65SQDT fghl50t65sqdt-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99.7nC
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AFGHL50T65RQDN afghl50t65rqdn-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Application: automotive industry
Power dissipation: 173W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 65nC
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AFGHL50T65SQ afghl50t65sq-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
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AFGHL50T65SQD afghl50t65sqd-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 102nC
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AFGHL50T65SQDC afghl50t65sqdc-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 119W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
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NTK3139PT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE88A9F2322A70F33D1&compId=NTK3139P.pdf?ci_sign=ddf9913d6cf072dea7c3cccbb87c174eb1e9a7db
NTK3139PT1G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.57A
Power dissipation: 0.45W
Case: SOT723
Gate-source voltage: ±6V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.49 грн
44+9.27 грн
57+7.11 грн
100+6.39 грн
268+3.52 грн
735+3.32 грн
Мінімальне замовлення: 28
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MC14050BDR2G mc14049b-d.pdf
MC14050BDR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 3...18V DC
Number of channels: 6
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MC14050BDTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627EE730D20D3&compId=MC14049B-D.pdf?ci_sign=d03075f30e075d7cab28bef2e7dc348b5d9f31bd
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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1N5355BRLG description pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5355BRLG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 18V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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NTTFS008N04CTAG nttfs008n04c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFN8
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 10nC
On-state resistance: 8.5mΩ
Power dissipation: 12W
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
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NVTFWS008N04CTAG nvtfs008n04c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFNW8
Case: WDFNW8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 10nC
On-state resistance: 8.5mΩ
Power dissipation: 12W
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
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NVH4L030N120M3S nvh4l030n120m3s-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Case: TO247-4
Gate-source voltage: -3...18V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NTH4L030N120M3S nth4l030n120m3s-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Case: TO247-4
Gate-source voltage: -10...22V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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FDT3N40TF fdt3n40-d.pdf
FDT3N40TF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NTBG030N120M3S NTBG030N120M3S-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVBG030N120M3S NVBG030N120M3S-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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CPH5524-TL-E cph5524-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 3A; 1.2W
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.2W
Case: CPH5
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 380MHz
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NCP45524IMNTWG-H ncp45524-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Active logical level: high
Kind of integrated circuit: high-side
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 31.7mΩ
Output current: 6A
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Type of integrated circuit: power switch
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NCP45524IMNTWG-L ncp45524-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Active logical level: low
Kind of integrated circuit: high-side
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 31.7mΩ
Output current: 6A
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Type of integrated circuit: power switch
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FOD2742B description pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5B6B7D1BF1C8A17&compId=FOD2742B.pdf?ci_sign=74f8dcfbcb772bee9845f7470abc064c594d128d
FOD2742B
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 2.5kV; SOIC8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-200%@10mA
Case: SOIC8
на замовлення 332 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+85.21 грн
10+53.55 грн
25+51.95 грн
Мінімальне замовлення: 6
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LM2576D2TR4-012G lm2576-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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LM2576D2TR4-5G lm2576-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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LM2576D2T-15G pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB6B91A2341E21&compId=LM2576-ON-DTE.PDF?ci_sign=57e1f2f97eaefef402f5ab6bda0669220b5107d8
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 18÷40VDC; Uout: 15VDC; 3A; D2PAK-5; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Topology: buck
Frequency: 42...63kHz
Operating temperature: -40...125°C
Number of channels: 1
Output current: 3A
Output voltage: 15V DC
Input voltage: 18...40V DC
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NCV8843MNR2G ncv8843-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DFN18; SMD; reel,tape; automotive industry
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Case: DFN18
Type of integrated circuit: PMIC
Mounting: SMD
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MOC3042M MOC3042M.pdf
MOC3042M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 1kV/μs
Manufacturer series: MOC304XM
на замовлення 2491 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+62.84 грн
12+34.69 грн
25+29.65 грн
50+26.62 грн
100+23.98 грн
500+23.50 грн
Мінімальне замовлення: 7
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MMBT5401 MMBT5401.pdf
MMBT5401
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
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