| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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FCD600N65S3R0 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 15A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MMBF0201NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.24A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MVMBF0201NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 300mA; Idm: 0.75A; 225mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.3A Pulsed drain current: 0.75A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FDPC5030SG | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 56/84A; 23/25W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 56/84A Power dissipation: 23/25W Case: PQFN8 On-state resistance: 5/2.4mΩ Mounting: SMD Gate charge: 17/39nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20/±12V Semiconductor structure: asymmetric |
на замовлення 2986 шт: термін постачання 14-30 дні (днів) |
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KSP42TA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Current gain: 40 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSP42BU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Current gain: 40 Mounting: THT Kind of package: bulk Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74VHC1G08DTT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: CMOS Mounting: SMD Case: TSOP5 Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 2...5.5V DC Kind of gate: AND Family: VHC Number of inputs: 2 |
на замовлення 2699 шт: термін постачання 14-30 дні (днів) |
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MC74VHCT245ADTRG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Technology: CMOS Case: TSSOP20 Manufacturer series: VHCT Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 4.5...5.5V DC Kind of output: 3-state Number of channels: 8 Kind of integrated circuit: bidirectional; transceiver |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74VHCT245ADTG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; TSSOP20 Type of integrated circuit: digital Family: VHCT Technology: CMOS; TTL Case: TSSOP20 Manufacturer series: VHCT Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of integrated circuit: bus transceiver; octal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74VHCT245ADWRG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB Type of integrated circuit: digital Family: VHCT Technology: CMOS; TTL Case: SO20WB Manufacturer series: VHCT Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of integrated circuit: bus transceiver; octal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RURG5060-F085 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 50A; tube; Ifsm: 150A; TO247-2; 90ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 50A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 150A Case: TO247-2 Reverse recovery time: 90ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BAT54CLT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SC59; SMD; 30V; 200mA; 5ns; 225mW Type of diode: Schottky switching Case: SC59 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Capacitance: 10pF Max. forward voltage: 0.32V Max. load current: 0.2A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Power dissipation: 0.225W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4002G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: bulk Max. forward voltage: 1.1V Manufacturer standard package: 1000pcs. |
на замовлення 124 шт: термін постачання 14-30 дні (днів) |
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1N4002RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; reel,tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: reel; tape Max. forward voltage: 1.1V Manufacturer standard package: 5000pcs. |
на замовлення 4921 шт: термін постачання 14-30 дні (днів) |
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| FUSB302TMPX | ONSEMI |
Category: Battery and battery cells controllersDescription: IC: interface; transceiver; WQFN14; 2.7÷5.5V; 5Gbps Supply voltage: 2.7...5.5V Interface: USB; USB 3.1 USB speed: Full Speed Data transfer rate: 5Gbps Mounting: SMD Kind of integrated circuit: transceiver Operating temperature: -40...85°C DC supply current: 25µA Type of integrated circuit: interface Case: WQFN14 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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FDB2614 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 62A; 260W; D2PAK Case: D2PAK Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PowerTrench® Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 99nC On-state resistance: 27mΩ Gate-source voltage: ±30V Drain current: 62A Drain-source voltage: 200V Power dissipation: 260W |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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BD437G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 4A Power dissipation: 36W Case: TO225 Current gain: 85...375 Mounting: THT Kind of package: bulk Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BD437TG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 4A Power dissipation: 36W Case: TO225 Current gain: 85...375 Mounting: THT Kind of package: bulk Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74AC04MTC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Family: AC Supply voltage: 2...6V DC Kind of package: tube Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 1 |
на замовлення 193 шт: термін постачання 14-30 дні (днів) |
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74AC04MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Number of inputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTR5198NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT23 On-state resistance: 155mΩ Power dissipation: 0.6W Drain current: 1.6A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar |
на замовлення 7375 шт: термін постачання 14-30 дні (днів) |
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MUR1620CTRG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB; 85ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common anode; double Case: TO220AB Kind of package: tube Reverse recovery time: 85ns Max. forward impulse current: 100A Heatsink thickness: 1.15...1.39mm Max. load current: 16A |
на замовлення 93 шт: термін постачання 14-30 дні (днів) |
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MUR1620CTG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Reverse recovery time: 35ns Max. forward impulse current: 100A Heatsink thickness: 1.15...1.39mm Max. load current: 16A |
на замовлення 427 шт: термін постачання 14-30 дні (днів) |
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74AC04SCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: hex; inverter Kind of gate: NOT Number of channels: 6 Number of inputs: 1 Mounting: SMD Case: SOIC14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74AC04DR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Quiescent current: 40µA |
на замовлення 2290 шт: термін постачання 14-30 дні (днів) |
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MC74AC04DTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; AC Type of integrated circuit: digital Kind of integrated circuit: hex; inverter Kind of gate: NOT Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N3595TR | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 8pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 3µA Power dissipation: 0.5W Reverse recovery time: 3µs |
на замовлення 3101 шт: термін постачання 14-30 дні (днів) |
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| 1N3595 | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us Type of diode: switching Mounting: THT Max. off-state voltage: 150V Load current: 0.2A Max. forward impulse current: 0.2A Case: DO35 Max. forward voltage: 1V Reverse recovery time: 3µs |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| KA5M0365RYDTU | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 2.4A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: TO220F-4FL Mounting: THT Operating temperature: -40...85°C Topology: flyback; forward On-state resistance: 4.5Ω Duty cycle factor: 72...82% Kind of package: tube Power: 75W Operating voltage: 9...27V DC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP4328ASNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; TSOP5; 2.5÷40VDC Type of integrated circuit: PMIC Mounting: SMD Case: TSOP5 Operating temperature: -40...125°C Operating voltage: 2.5...40V DC Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP4328BSNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; TSOP6; 2.5÷40VDC Type of integrated circuit: PMIC Mounting: SMD Case: TSOP6 Operating temperature: -40...125°C Operating voltage: 2.5...40V DC Number of channels: 1 Frequency: 1kHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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MC74AC74DR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Trigger: positive-edge-triggered Kind of package: reel; tape Technology: TTL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74AC74DTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Trigger: positive-edge-triggered Kind of package: reel; tape Technology: CMOS |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
| MC34072ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: 0...70°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC34072AMTTBG | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: WQFN10 Operating temperature: 0...70°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC34072VDR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2N6520TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 40...200MHz Collector current: 0.5A Collector-emitter voltage: 350V Current gain: 30...200 |
на замовлення 442 шт: термін постачання 14-30 дні (днів) |
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| N24C02UDTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 1.6...5.5V Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...85°C Access time: 450ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| N24C02UVTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 1.6...5.5V Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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CAT24C02TDI-GT3A | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 1.7...5.5V Mounting: SMD Case: SOT23-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| CAV24C02WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAV24C02YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCP3063BDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Topology: boost; buck; buck-boost Operating temperature: -40...125°C Kind of package: reel; tape Number of channels: 1 Operating voltage: 5...40V DC Frequency: 110...190kHz |
на замовлення 1944 шт: термін постачання 14-30 дні (днів) |
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MBRB2545CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.65V Kind of package: reel; tape Max. load current: 30A |
на замовлення 227 шт: термін постачання 14-30 дні (днів) |
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MUR1540G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 200A Kind of package: tube Heatsink thickness: 1.14...1.39mm Reverse recovery time: 60ns Max. load current: 30A |
на замовлення 140 шт: термін постачання 14-30 дні (днів) |
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MBRS1540T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 1.5A Semiconductor structure: single diode Max. forward voltage: 0.54V Kind of package: reel; tape Max. load current: 3A |
на замовлення 585 шт: термін постачання 14-30 дні (днів) |
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FQPF27P06 | ONSEMI |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 47W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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FQB27P06TM | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -19.1A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 550 шт: термін постачання 14-30 дні (днів) |
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| MJ15001G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3 Type of transistor: NPN Polarisation: bipolar Power dissipation: 200W Case: TO3 Mounting: THT Kind of package: in-tray Current gain: 25...150 Collector current: 15A Collector-emitter voltage: 140V Frequency: 2MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LMV324DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Case: SO14 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: low voltage; rail-to-rail output; voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LMV324DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14512BDR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B Type of integrated circuit: digital Mounting: SMD Case: SO16 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 8 Supply voltage: 3...18V DC Kind of integrated circuit: data selector Technology: TTL Number of channels: 8 Family: HEF4000B |
на замовлення 2488 шт: термін постачання 14-30 дні (днів) |
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FCPF16N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 37.9W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 48A Gate charge: 70nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CAT24C256YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Mounting: SMD Case: TSSOP8 |
на замовлення 46 шт: термін постачання 14-30 дні (днів) |
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| NV24C256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAV24C256WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAV24C256YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP1246BLD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Kind of integrated circuit: AC/DC switcher; PWM controller Case: SO7 Topology: flyback Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...125°C Output current: 500...800mA Number of channels: 1 Operating voltage: 8.9...26.5V DC Frequency: 58...72kHz |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC165ADR2G-Q | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC Type of integrated circuit: digital Mounting: SMD Delay time: 225ns Supply voltage: 2...6V Kind of output: complementary; push-pull Operating temperature: -55...125°C Trigger: positive-edge-triggered Number of inputs: 9 Case: SOIC16 Family: HC Number of outputs: 1 Kind of integrated circuit: parallel in; shift register Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC165ADTR2G-Q | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC Type of integrated circuit: digital Mounting: SMD Delay time: 225ns Supply voltage: 2...6V Kind of output: complementary; push-pull Operating temperature: -55...125°C Trigger: positive-edge-triggered Number of inputs: 9 Case: TSSOP16 Family: HC Number of outputs: 1 Kind of integrated circuit: parallel in; shift register Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. |
| FCD600N65S3R0 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 15A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 15A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MMBF0201NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MVMBF0201NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 300mA; Idm: 0.75A; 225mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.3A
Pulsed drain current: 0.75A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 300mA; Idm: 0.75A; 225mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.3A
Pulsed drain current: 0.75A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDPC5030SG |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/84A; 23/25W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/84A
Power dissipation: 23/25W
Case: PQFN8
On-state resistance: 5/2.4mΩ
Mounting: SMD
Gate charge: 17/39nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20/±12V
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/84A; 23/25W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56/84A
Power dissipation: 23/25W
Case: PQFN8
On-state resistance: 5/2.4mΩ
Mounting: SMD
Gate charge: 17/39nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20/±12V
Semiconductor structure: asymmetric
на замовлення 2986 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 74.50 грн |
| 10+ | 62.59 грн |
| 100+ | 54.36 грн |
| 500+ | 49.41 грн |
| 1000+ | 46.12 грн |
| KSP42TA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
товару немає в наявності
В кошику
од. на суму грн.
| KSP42BU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
товару немає в наявності
В кошику
од. на суму грн.
| MC74VHC1G08DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Kind of gate: AND
Family: VHC
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Kind of gate: AND
Family: VHC
Number of inputs: 2
на замовлення 2699 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 12.06 грн |
| 50+ | 9.80 грн |
| 250+ | 8.32 грн |
| 1000+ | 7.08 грн |
| MC74VHCT245ADTRG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP20
Manufacturer series: VHCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Number of channels: 8
Kind of integrated circuit: bidirectional; transceiver
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP20
Manufacturer series: VHCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Number of channels: 8
Kind of integrated circuit: bidirectional; transceiver
товару немає в наявності
В кошику
од. на суму грн.
| MC74VHCT245ADTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; TSSOP20
Type of integrated circuit: digital
Family: VHCT
Technology: CMOS; TTL
Case: TSSOP20
Manufacturer series: VHCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bus transceiver; octal
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; TSSOP20
Type of integrated circuit: digital
Family: VHCT
Technology: CMOS; TTL
Case: TSSOP20
Manufacturer series: VHCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bus transceiver; octal
товару немає в наявності
В кошику
од. на суму грн.
| MC74VHCT245ADWRG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB
Type of integrated circuit: digital
Family: VHCT
Technology: CMOS; TTL
Case: SO20WB
Manufacturer series: VHCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bus transceiver; octal
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB
Type of integrated circuit: digital
Family: VHCT
Technology: CMOS; TTL
Case: SO20WB
Manufacturer series: VHCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bus transceiver; octal
товару немає в наявності
В кошику
од. на суму грн.
| RURG5060-F085 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 50A; tube; Ifsm: 150A; TO247-2; 90ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 150A
Case: TO247-2
Reverse recovery time: 90ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 50A; tube; Ifsm: 150A; TO247-2; 90ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 150A
Case: TO247-2
Reverse recovery time: 90ns
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BAT54CLT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 30V; 200mA; 5ns; 225mW
Type of diode: Schottky switching
Case: SC59
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Capacitance: 10pF
Max. forward voltage: 0.32V
Max. load current: 0.2A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 30V; 200mA; 5ns; 225mW
Type of diode: Schottky switching
Case: SC59
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Capacitance: 10pF
Max. forward voltage: 0.32V
Max. load current: 0.2A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.225W
товару немає в наявності
В кошику
од. на суму грн.
| 1N4002G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
на замовлення 124 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.64 грн |
| 72+ | 5.77 грн |
| 100+ | 4.32 грн |
| 1N4002RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Manufacturer standard package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Manufacturer standard package: 5000pcs.
на замовлення 4921 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.64 грн |
| 53+ | 7.82 грн |
| 63+ | 6.59 грн |
| 73+ | 5.65 грн |
| 100+ | 4.84 грн |
| 250+ | 3.95 грн |
| 500+ | 3.39 грн |
| 1000+ | 3.03 грн |
| FUSB302TMPX |
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Виробник: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷5.5V; 5Gbps
Supply voltage: 2.7...5.5V
Interface: USB; USB 3.1
USB speed: Full Speed
Data transfer rate: 5Gbps
Mounting: SMD
Kind of integrated circuit: transceiver
Operating temperature: -40...85°C
DC supply current: 25µA
Type of integrated circuit: interface
Case: WQFN14
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷5.5V; 5Gbps
Supply voltage: 2.7...5.5V
Interface: USB; USB 3.1
USB speed: Full Speed
Data transfer rate: 5Gbps
Mounting: SMD
Kind of integrated circuit: transceiver
Operating temperature: -40...85°C
DC supply current: 25µA
Type of integrated circuit: interface
Case: WQFN14
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| FDB2614 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 260W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 99nC
On-state resistance: 27mΩ
Gate-source voltage: ±30V
Drain current: 62A
Drain-source voltage: 200V
Power dissipation: 260W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 260W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 99nC
On-state resistance: 27mΩ
Gate-source voltage: ±30V
Drain current: 62A
Drain-source voltage: 200V
Power dissipation: 260W
товару немає в наявності
Мінімальне замовлення: 800 шт
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| BD437G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Current gain: 85...375
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Current gain: 85...375
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
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| BD437TG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Current gain: 85...375
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Current gain: 85...375
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
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| 74AC04MTC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Family: AC
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Family: AC
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 34.59 грн |
| 15+ | 28.50 грн |
| 74AC04MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Number of inputs: 1
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| NTR5198NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
On-state resistance: 155mΩ
Power dissipation: 0.6W
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
On-state resistance: 155mΩ
Power dissipation: 0.6W
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
на замовлення 7375 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.38 грн |
| 24+ | 17.38 грн |
| 30+ | 14.17 грн |
| 50+ | 12.11 грн |
| 100+ | 10.38 грн |
| 250+ | 8.48 грн |
| 500+ | 7.41 грн |
| 1000+ | 6.42 грн |
| 3000+ | 5.27 грн |
| MUR1620CTRG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB; 85ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common anode; double
Case: TO220AB
Kind of package: tube
Reverse recovery time: 85ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB; 85ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common anode; double
Case: TO220AB
Kind of package: tube
Reverse recovery time: 85ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
на замовлення 93 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 156.99 грн |
| 10+ | 88.95 грн |
| 50+ | 85.65 грн |
| MUR1620CTG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
на замовлення 427 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 141.02 грн |
| 5+ | 101.30 грн |
| 10+ | 86.48 грн |
| 50+ | 59.30 грн |
| 100+ | 52.71 грн |
| 74AC04SCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| MC74AC04DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Quiescent current: 40µA
на замовлення 2290 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.27 грн |
| 19+ | 22.24 грн |
| 21+ | 19.68 грн |
| 25+ | 16.80 грн |
| 50+ | 15.07 грн |
| 100+ | 13.67 грн |
| 250+ | 12.35 грн |
| 500+ | 11.94 грн |
| MC74AC04DTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| 1N3595TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
на замовлення 3101 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 7.98 грн |
| 79+ | 5.27 грн |
| 117+ | 3.55 грн |
| 500+ | 2.77 грн |
| 1000+ | 2.51 грн |
| 1N3595 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 0.2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 3µs
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 0.2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 3µs
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| KA5M0365RYDTU |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.4A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -40...85°C
Topology: flyback; forward
On-state resistance: 4.5Ω
Duty cycle factor: 72...82%
Kind of package: tube
Power: 75W
Operating voltage: 9...27V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.4A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -40...85°C
Topology: flyback; forward
On-state resistance: 4.5Ω
Duty cycle factor: 72...82%
Kind of package: tube
Power: 75W
Operating voltage: 9...27V DC
товару немає в наявності
Мінімальне замовлення: 1000 шт
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од. на суму грн.
| NCP4328ASNT1G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP5; 2.5÷40VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: TSOP5
Operating temperature: -40...125°C
Operating voltage: 2.5...40V DC
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP5; 2.5÷40VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: TSOP5
Operating temperature: -40...125°C
Operating voltage: 2.5...40V DC
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| NCP4328BSNT1G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; 2.5÷40VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: TSOP6
Operating temperature: -40...125°C
Operating voltage: 2.5...40V DC
Number of channels: 1
Frequency: 1kHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; 2.5÷40VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: TSOP6
Operating temperature: -40...125°C
Operating voltage: 2.5...40V DC
Number of channels: 1
Frequency: 1kHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC74AC74DR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Technology: TTL
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Technology: TTL
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| MC74AC74DTR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Technology: CMOS
товару немає в наявності
Мінімальне замовлення: 5000 шт
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од. на суму грн.
| MC34072ADR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MC34072AMTTBG |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: WQFN10
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: WQFN10
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MC34072VDR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| 2N6520TA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Collector current: 0.5A
Collector-emitter voltage: 350V
Current gain: 30...200
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Collector current: 0.5A
Collector-emitter voltage: 350V
Current gain: 30...200
на замовлення 442 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.51 грн |
| 38+ | 11.04 грн |
| 100+ | 6.96 грн |
| N24C02UDTG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| N24C02UVTG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| CAT24C02TDI-GT3A |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOT23-5
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOT23-5
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| CAV24C02WE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| CAV24C02YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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| NCP3063BDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Topology: boost; buck; buck-boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Operating voltage: 5...40V DC
Frequency: 110...190kHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Topology: boost; buck; buck-boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Operating voltage: 5...40V DC
Frequency: 110...190kHz
на замовлення 1944 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.37 грн |
| 7+ | 65.06 грн |
| 10+ | 58.47 грн |
| 25+ | 51.89 грн |
| 50+ | 49.41 грн |
| MBRB2545CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 30A
на замовлення 227 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 119.42 грн |
| 10+ | 93.06 грн |
| 20+ | 81.53 грн |
| 50+ | 72.48 грн |
| MUR1540G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 60ns
Max. load current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 60ns
Max. load current: 30A
на замовлення 140 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 62.97 грн |
| MBRS1540T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
Max. load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
Max. load current: 3A
на замовлення 585 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.89 грн |
| 18+ | 23.47 грн |
| 25+ | 19.93 грн |
| 50+ | 17.95 грн |
| 100+ | 16.14 грн |
| 250+ | 14.41 грн |
| 500+ | 13.67 грн |
| FQPF27P06 |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 179.16 грн |
| 10+ | 98.83 грн |
| FQB27P06TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 550 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 187.14 грн |
| 5+ | 139.18 грн |
| 10+ | 123.54 грн |
| 25+ | 104.59 грн |
| 50+ | 92.24 грн |
| 100+ | 82.36 грн |
| MJ15001G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Current gain: 25...150
Collector current: 15A
Collector-emitter voltage: 140V
Frequency: 2MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Current gain: 25...150
Collector current: 15A
Collector-emitter voltage: 140V
Frequency: 2MHz
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| LMV324DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
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| LMV324DTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
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| MC14512BDR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Supply voltage: 3...18V DC
Kind of integrated circuit: data selector
Technology: TTL
Number of channels: 8
Family: HEF4000B
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Supply voltage: 3...18V DC
Kind of integrated circuit: data selector
Technology: TTL
Number of channels: 8
Family: HEF4000B
на замовлення 2488 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.36 грн |
| 18+ | 23.88 грн |
| 25+ | 21.41 грн |
| 100+ | 18.70 грн |
| 250+ | 18.04 грн |
| FCPF16N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 70nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 70nC
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| CAT24C256YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.25 грн |
| NV24C256MUW3VTBG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| CAV24C256WE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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| CAV24C256YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCP1246BLD065R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SO7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: 500...800mA
Number of channels: 1
Operating voltage: 8.9...26.5V DC
Frequency: 58...72kHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: SO7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: 500...800mA
Number of channels: 1
Operating voltage: 8.9...26.5V DC
Frequency: 58...72kHz
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74HC165ADR2G-Q |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: SOIC16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: SOIC16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC165ADTR2G-Q |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: TSSOP16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: TSSOP16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.


































