| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NCP167AFCTC350T2G | ONSEMI |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.5V; 700mA; WLCSP4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.5V Output current: 0.7A Case: WLCSP4 Mounting: SMD Manufacturer series: NCP167 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V |
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BZX79C8V2 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.7µA Manufacturer series: BZX79C |
на замовлення 1877 шт: термін постачання 21-30 дні (днів) |
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NCN6001DTBR2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; TSSOP20; reel,tape Case: TSSOP20 Application: for smart card application Type of integrated circuit: interface Mounting: SMD Kind of package: reel; tape Operating temperature: -25...85°C Supply voltage: 2.7...5.5V DC Kind of integrated circuit: card inerface |
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SZMMSZ5231BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode Application: automotive industry Case: SOD123 Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
на замовлення 2683 шт: термін постачання 21-30 дні (днів) |
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2SB1123T-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Power dissipation: 0.5W |
на замовлення 731 шт: термін постачання 21-30 дні (днів) |
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| NVMYS6D2N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 440A; 31W; LFPAK56 Case: LFPAK56 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 20nC On-state resistance: 6.1mΩ Power dissipation: 31W Drain current: 71A Pulsed drain current: 440A Gate-source voltage: ±20V Drain-source voltage: 60V |
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| NVMYS2D2N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 900A; 67W; LFPAK56 Case: LFPAK56 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 69nC On-state resistance: 2mΩ Power dissipation: 67W Drain current: 185A Pulsed drain current: 900A Gate-source voltage: ±20V Drain-source voltage: 60V |
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| NSV1C201MZ4T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 2A; 0.8W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 0.8W Case: SOT223-4; TO261-4 Current gain: 120...360 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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BZX79C3V9 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.9V; bulk; CASE017AG; single diode; 10uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: BZX79C |
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BZX79C4V3 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.3V; bulk; CASE017AG; single diode; 5uA; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: BZX79C |
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BZX79C3V6 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 15uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 15µA Manufacturer series: BZX79C |
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| NRVTS12120MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 120V Load current: 12A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.83V Max. load current: 24A Max. forward impulse current: 200A Kind of package: reel; tape Application: automotive industry |
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| NRVTS12120MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 120V Load current: 12A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.83V Max. load current: 24A Max. forward impulse current: 200A Kind of package: reel; tape Application: automotive industry |
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 +1 |
MC74VHC1G00DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Case: TSOP5 Supply voltage: 2...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS Number of inputs: 2 Kind of gate: NAND Family: VHC Quiescent current: 40µA |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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NCP1937A2DR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
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NCP1937A3DR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
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NCP1937B1DR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 215...285kHz Topology: flyback |
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NCP1937B3DR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
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NCP1937C4DR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
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NCP1937C61DR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
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| NTLUS020N03CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; Idm: 24A; 1.52W; uDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.2A Pulsed drain current: 24A Power dissipation: 1.52W Case: uDFN6 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
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1SMA5939BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
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| 1SMB5939BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Tolerance: ±5% Power dissipation: 3W Zener voltage: 39V Manufacturer series: 1SMB59xxBT3G |
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| SZ1SMA5939BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
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| SZ1SMB5939BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Mounting: SMD Type of diode: Zener Tolerance: ±5% Power dissipation: 3W Zener voltage: 39V Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
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| MBRF20L60CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.69V Max. forward impulse current: 0.24kA Kind of package: tube Max. load current: 20A |
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| MMPQ3904 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x4; bipolar; 40V; 0.2A; 0.8W; SO16 Type of transistor: NPN x4 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.8W Case: SO16 Current gain: 75 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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| MMPQ3906 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x4; bipolar; 40V; 0.2A; 0.8W; SO16 Type of transistor: PNP x4 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.8W Case: SO16 Current gain: 75 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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TIL117M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 50%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Case: DIP6 Turn-on time: 10µs CTR@If: 50%@10mA Turn-off time: 10µs |
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MBRS2H100T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.65V Load current: 2A Max. load current: 130A Max. off-state voltage: 100V Semiconductor structure: single diode Case: SMB |
на замовлення 2477 шт: термін постачання 21-30 дні (днів) |
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MBRD5H100T4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 100V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape Max. load current: 10A |
на замовлення 2493 шт: термін постачання 21-30 дні (днів) |
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MC33153PG | ONSEMI |
 Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver Case: DIP8 Output current: -2...1A Number of channels: 1 Mounting: SMD Operating temperature: -40...105°C Supply voltage: 11...20V DC Impulse rise time: 55ns Pulse fall time: 55ns Output voltage: 2...13.9V Protection: over current OCP; short circuit protection SCP; undervoltage UVP Topology: H-bridge Kind of output: inverting Kind of package: tube |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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| GBPC3506W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
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| ISL9V5036P3-F085 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 360V Collector current: 31A Power dissipation: 250W Case: TO220-3 Gate-emitter voltage: ±10V Mounting: THT Gate charge: 32nC Kind of package: tube Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
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| FDMC0310AS-F127 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8 Case: MLP8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 52nC On-state resistance: 5.8mΩ Gate-source voltage: ±20V Drain current: 21A Drain-source voltage: 30V Power dissipation: 36W Pulsed drain current: 100A Kind of channel: enhancement |
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MC14042BDR2G | ONSEMI |
Category: Latches Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: latch Number of channels: 4 Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Technology: CMOS Family: HEF4000B Kind of package: reel; tape |
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| NCS21801SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 600pA Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Case: SOT23-5 Number of channels: single Input offset current: 400pA Input bias current: 0.6nA Input offset voltage: 10µV Slew rate: 0.7V/μs Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC Bandwidth: 1.5MHz Type of integrated circuit: operational amplifier |
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| NCS21801SQ3T2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Case: SC70-5 Number of channels: single Input offset current: 400pA Input bias current: 0.6nA Input offset voltage: 10µV Slew rate: 0.7V/μs Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC Bandwidth: 1.5MHz Type of integrated circuit: operational amplifier |
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| NCV21801SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA Mounting: SMT Operating temperature: -40...150°C Kind of package: reel; tape Case: SOT23-5 Number of channels: single Input offset current: 2.5nA Input bias current: 5nA Input offset voltage: 10µV Slew rate: 0.7V/μs Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC Bandwidth: 1.5MHz Type of integrated circuit: operational amplifier |
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| NCV21801SQ3T2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC Mounting: SMT Operating temperature: -40...150°C Kind of package: reel; tape Case: SC70-5 Number of channels: single Input offset current: 2.5nA Input bias current: 5nA Input offset voltage: 10µV Slew rate: 0.7V/μs Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC Bandwidth: 1.5MHz Type of integrated circuit: operational amplifier |
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NCV8460ADR2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8 Mounting: SMD Kind of package: reel; tape Case: SO8 Type of integrated circuit: power switch On-state resistance: 0.4Ω Number of channels: 1 Output current: 3A Supply voltage: 6...36V DC Application: automotive industry Kind of output: N-Channel Kind of integrated circuit: high-side |
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| BZX79C13-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 13V; Ammo Pack; CASE017AG; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Kind of package: Ammo Pack Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZX79C |
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| MJD32CRLG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
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| MJD32CT4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
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| NJVMJD32CG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: tube Frequency: 3MHz Application: automotive industry |
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| NJVMJD32CT4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
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| BZX79C12-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; Ammo Pack; CASE017AG; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: Ammo Pack Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZX79C |
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1N5362BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 28V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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| 1N5362BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 28V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
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В кошику од. на суму грн. | |||||||||||||
| FDMC6679AZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: WDFN8 Drain-source voltage: -30V Drain current: -20A On-state resistance: 15mΩ Power dissipation: 41W Gate-source voltage: ±25V Polarisation: unipolar |
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В кошику од. на суму грн. | |||||||||||||
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MGSF2N02ELT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.8A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 85mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1980 шт: термін постачання 21-30 дні (днів) |
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MC74HC4538ADR2G | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Number of inputs: 3 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||
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FDS4675 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -11A Power dissipation: 2.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 470 шт: термін постачання 21-30 дні (днів) |
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FDD850N10L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11.1A Power dissipation: 50W Case: DPAK Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2147 шт: термін постачання 21-30 дні (днів) |
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| FDI150N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 228A Power dissipation: 110W Case: I2PAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||
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FSL117MRIN | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 800mA; 700V; 67kHz; Ch: 1; DIP8; flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 0.8A Output voltage: 700V Frequency: 67kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -40...125°C Topology: flyback Input voltage: 85...265V On-state resistance: 11Ω Duty cycle factor: 61...73% Power: 10W Operating voltage: 7.5...24.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 +1 |
M74VHC1GT00DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: TTL Supply voltage: 2...5.5V DC Mounting: SMD Case: SC88A Operating temperature: -55...125°C Family: VHC Kind of package: reel; tape Quiescent current: 40µA Number of inputs: 2 Kind of gate: NAND |
на замовлення 1106 шт: термін постачання 21-30 дні (днів) |
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SS23 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 2276 шт: термін постачання 21-30 дні (днів) |
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| SS23FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MJD340T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V |
товару немає в наявності |
В кошику од. на суму грн. |
| NCP167AFCTC350T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.5V; 700mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.5V
Output current: 0.7A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.5V; 700mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.5V
Output current: 0.7A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP167
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
товару немає в наявності
В кошику
од. на суму грн.
| BZX79C8V2 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.7µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; bulk; CASE017AG; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.7µA
Manufacturer series: BZX79C
на замовлення 1877 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.57 грн |
| 79+ | 5.09 грн |
| 98+ | 4.10 грн |
| 163+ | 2.45 грн |
| 250+ | 2.08 грн |
| 413+ | 2.07 грн |
| NCN6001DTBR2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; TSSOP20; reel,tape
Case: TSSOP20
Application: for smart card application
Type of integrated circuit: interface
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -25...85°C
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: card inerface
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; TSSOP20; reel,tape
Case: TSSOP20
Application: for smart card application
Type of integrated circuit: interface
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -25...85°C
Supply voltage: 2.7...5.5V DC
Kind of integrated circuit: card inerface
товару немає в наявності
В кошику
од. на суму грн.
| SZMMSZ5231BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Case: SOD123
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
на замовлення 2683 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.56 грн |
| 39+ | 10.34 грн |
| 49+ | 8.27 грн |
| 67+ | 6.01 грн |
| 100+ | 4.08 грн |
| 209+ | 4.07 грн |
| 2SB1123T-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Power dissipation: 0.5W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Power dissipation: 0.5W
на замовлення 731 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.68 грн |
| 12+ | 33.33 грн |
| 25+ | 28.08 грн |
| 61+ | 15.59 грн |
| 166+ | 14.72 грн |
| NVMYS6D2N06CLTWG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 440A; 31W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 6.1mΩ
Power dissipation: 31W
Drain current: 71A
Pulsed drain current: 440A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 440A; 31W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 6.1mΩ
Power dissipation: 31W
Drain current: 71A
Pulsed drain current: 440A
Gate-source voltage: ±20V
Drain-source voltage: 60V
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| NVMYS2D2N06CLTWG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 900A; 67W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 69nC
On-state resistance: 2mΩ
Power dissipation: 67W
Drain current: 185A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 185A; Idm: 900A; 67W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 69nC
On-state resistance: 2mΩ
Power dissipation: 67W
Drain current: 185A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Drain-source voltage: 60V
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| NSV1C201MZ4T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 0.8W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 0.8W
Case: SOT223-4; TO261-4
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 0.8W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 0.8W
Case: SOT223-4; TO261-4
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| BZX79C3V9 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; bulk; CASE017AG; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; bulk; CASE017AG; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZX79C
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| BZX79C4V3 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; bulk; CASE017AG; single diode; 5uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; bulk; CASE017AG; single diode; 5uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX79C
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| BZX79C3V6 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 15uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 15µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 15uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 15µA
Manufacturer series: BZX79C
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| NRVTS12120MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS12120MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
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| MC74VHC1G00DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: TSOP5
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of gate: NAND
Family: VHC
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: TSOP5
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of gate: NAND
Family: VHC
Quiescent current: 40µA
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 41+ | 10.62 грн |
| 50+ | 7.95 грн |
| NCP1937A2DR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
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| NCP1937A3DR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
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| NCP1937B1DR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 215...285kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 215...285kHz
Topology: flyback
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| NCP1937B3DR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
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| NCP1937C4DR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
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| NCP1937C61DR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
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| NTLUS020N03CTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; Idm: 24A; 1.52W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Pulsed drain current: 24A
Power dissipation: 1.52W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; Idm: 24A; 1.52W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Pulsed drain current: 24A
Power dissipation: 1.52W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 1SMA5939BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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| 1SMB5939BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
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| SZ1SMA5939BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 39V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| SZ1SMB5939BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 39V; SMD; reel,tape; SMB; single diode
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 39V
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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| MBRF20L60CTG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 0.24kA
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 0.24kA
Kind of package: tube
Max. load current: 20A
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| MMPQ3904 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: NPN x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: NPN x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| MMPQ3906 |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: PNP x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP x4; bipolar; 40V; 0.2A; 0.8W; SO16
Type of transistor: PNP x4
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.8W
Case: SO16
Current gain: 75
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| TIL117M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 10µs
CTR@If: 50%@10mA
Turn-off time: 10µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 10µs
CTR@If: 50%@10mA
Turn-off time: 10µs
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| MBRS2H100T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 130A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 130A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Case: SMB
на замовлення 2477 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.70 грн |
| 17+ | 24.66 грн |
| 18+ | 22.35 грн |
| 50+ | 18.14 грн |
| 100+ | 16.71 грн |
| 250+ | 16.55 грн |
| MBRD5H100T4G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Max. load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Max. load current: 10A
на замовлення 2493 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 71.96 грн |
| 7+ | 59.50 грн |
| 10+ | 55.68 грн |
| 25+ | 38.26 грн |
| 68+ | 36.19 грн |
| 1000+ | 34.84 грн |
| MC33153PG | |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: DIP8
Output current: -2...1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 11...20V DC
Impulse rise time: 55ns
Pulse fall time: 55ns
Output voltage: 2...13.9V
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Topology: H-bridge
Kind of output: inverting
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: DIP8
Output current: -2...1A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 11...20V DC
Impulse rise time: 55ns
Pulse fall time: 55ns
Output voltage: 2...13.9V
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Topology: H-bridge
Kind of output: inverting
Kind of package: tube
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.65 грн |
| GBPC3506W |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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| ISL9V5036P3-F085 |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 31A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: THT IGBT transistors
Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 31A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| FDMC0310AS-F127 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Case: MLP8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 30V
Power dissipation: 36W
Pulsed drain current: 100A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Case: MLP8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 5.8mΩ
Gate-source voltage: ±20V
Drain current: 21A
Drain-source voltage: 30V
Power dissipation: 36W
Pulsed drain current: 100A
Kind of channel: enhancement
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| MC14042BDR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: latch
Number of channels: 4
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Technology: CMOS
Family: HEF4000B
Kind of package: reel; tape
Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: latch
Number of channels: 4
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Technology: CMOS
Family: HEF4000B
Kind of package: reel; tape
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| NCS21801SN2T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 600pA
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 600pA
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
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| NCS21801SQ3T2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 400pA
Input bias current: 0.6nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
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| NCV21801SN2T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
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| NCV21801SQ3T2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Mounting: SMT
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Type of integrated circuit: operational amplifier
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| NCV8460ADR2G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: power switch
On-state resistance: 0.4Ω
Number of channels: 1
Output current: 3A
Supply voltage: 6...36V DC
Application: automotive industry
Kind of output: N-Channel
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: power switch
On-state resistance: 0.4Ω
Number of channels: 1
Output current: 3A
Supply voltage: 6...36V DC
Application: automotive industry
Kind of output: N-Channel
Kind of integrated circuit: high-side
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| BZX79C13-T50A |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
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| MJD32CRLG |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| MJD32CT4G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| NJVMJD32CG |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
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| NJVMJD32CT4G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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| BZX79C12-T50A |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX79C
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| 1N5362BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.41 грн |
| 18+ | 22.59 грн |
| 20+ | 20.36 грн |
| 1N5362BRLG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| FDMC6679AZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 15mΩ
Power dissipation: 41W
Gate-source voltage: ±25V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 15mΩ
Power dissipation: 41W
Gate-source voltage: ±25V
Polarisation: unipolar
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| MGSF2N02ELT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.27 грн |
| 20+ | 20.52 грн |
| 50+ | 15.59 грн |
| 100+ | 13.68 грн |
| 111+ | 8.43 грн |
| 306+ | 7.95 грн |
| MC74HC4538ADR2G |
|
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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| FDS4675 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; 2.4W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Power dissipation: 2.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 470 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 101.95 грн |
| 6+ | 77.96 грн |
| 10+ | 70.00 грн |
| 18+ | 53.30 грн |
| 48+ | 50.91 грн |
| FDD850N10L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.1A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.1A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2147 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.24 грн |
| 6+ | 72.55 грн |
| 10+ | 64.99 грн |
| 20+ | 46.93 грн |
| 55+ | 44.39 грн |
| 500+ | 42.64 грн |
| FDI150N10 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
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| FSL117MRIN |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 800mA; 700V; 67kHz; Ch: 1; DIP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.8A
Output voltage: 700V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 11Ω
Duty cycle factor: 61...73%
Power: 10W
Operating voltage: 7.5...24.5V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 800mA; 700V; 67kHz; Ch: 1; DIP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.8A
Output voltage: 700V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 11Ω
Duty cycle factor: 61...73%
Power: 10W
Operating voltage: 7.5...24.5V DC
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| M74VHC1GT00DFT2G |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: TTL
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Quiescent current: 40µA
Number of inputs: 2
Kind of gate: NAND
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: TTL
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Quiescent current: 40µA
Number of inputs: 2
Kind of gate: NAND
на замовлення 1106 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 88+ | 4.88 грн |
| 112+ | 3.56 грн |
| 141+ | 2.84 грн |
| 500+ | 2.41 грн |
| SS23 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 2276 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 11.99 грн |
| 37+ | 10.82 грн |
| SS23FA |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| MJD340T4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
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од. на суму грн.