| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MC74AC374DWR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Family: AC Kind of output: 3-state Supply voltage: 2...6V DC Kind of package: reel; tape Manufacturer series: AC |
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| FDMC012N03 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 117A Pulsed drain current: 688A Power dissipation: 64W Case: Power33 Gate-source voltage: ±12V On-state resistance: 1.77mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FAN7382MX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; high-/low-side,gate driver; MillerDrive™ Case: SOP8 Mounting: SMD Kind of package: reel; tape Protection: undervoltage UVP Operating temperature: -40...125°C Output current: -650...350mA Impulse rise time: 140ns Pulse fall time: 80ns Number of channels: 2 Supply voltage: 10...20V DC Voltage class: 600V Kind of integrated circuit: gate driver; high-/low-side Topology: H-bridge Type of integrated circuit: driver Technology: MillerDrive™ |
на замовлення 1209 шт: термін постачання 21-30 дні (днів) |
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NUP2301MW6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: diode arrays; SC88; Ch: 2; reel,tape; ESD Case: SC88 Mounting: SMD Kind of package: reel; tape Type of diode: diode arrays Version: ESD Number of channels: 2 Max. off-state voltage: 70V |
на замовлення 2668 шт: термін постачання 21-30 дні (днів) |
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1SMB5930BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 16V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 949 шт: термін постачання 21-30 дні (днів) |
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| SZ1SMB5930BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMSZ5246BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 6630 шт: термін постачання 21-30 дні (днів) |
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MM3Z16VST1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
на замовлення 6005 шт: термін постачання 21-30 дні (днів) |
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BZX84C16LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOT23; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 16V Kind of package: reel; tape Case: SOT23 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX84C |
на замовлення 2592 шт: термін постачання 21-30 дні (днів) |
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MC33272ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 24MHz; Ch: 2; ±1.5÷18VDC,3÷36VDC; SO8 Mounting: SMT Operating temperature: -40...85°C Type of integrated circuit: operational amplifier Input offset voltage: 0.1mV Voltage supply range: ± 1.5...18V DC; 3...36V DC Slew rate: 10V/μs Bandwidth: 24MHz Kind of package: reel; tape Number of channels: dual; 2 Case: SO8 |
на замовлення 1827 шт: термін постачання 21-30 дні (днів) |
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MM74HCT32M | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Family: HCT Technology: CMOS Kind of package: tube Operating temperature: -40...85°C Delay time: 10ns Supply voltage: 4.5...5.5V DC |
на замовлення 249 шт: термін постачання 21-30 дні (днів) |
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74ACT32SCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Family: ACT Kind of package: reel; tape Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74ACT32MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; ACT Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Family: ACT Kind of package: reel; tape Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBF5484 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 1mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
на замовлення 1294 шт: термін постачання 21-30 дні (днів) |
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FDPF12N50T | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 42W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 30nC On-state resistance: 0.65Ω Kind of channel: enhancement Technology: UniFET™ Drain current: 6.9A Gate-source voltage: ±30V Drain-source voltage: 500V |
на замовлення 176 шт: термін постачання 21-30 дні (днів) |
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| FQNL2N50BTA | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.5W Case: TO92L Mounting: THT Kind of package: Ammo Pack Gate charge: 8nC On-state resistance: 5.3Ω Drain current: 0.22A Pulsed drain current: 1.4A Gate-source voltage: ±30V Drain-source voltage: 500V Kind of channel: enhancement Technology: QFET® |
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В кошику од. на суму грн. | |||||||||||||||||
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FDB12N50FTM-WS | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 165W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 30nC On-state resistance: 0.7Ω Kind of channel: enhancement Technology: UniFET™ Drain current: 6.9A Pulsed drain current: 46A Gate-source voltage: ±30V Drain-source voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FDB12N50TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 165W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 30nC On-state resistance: 0.65Ω Kind of channel: enhancement Technology: DMOS; UniFET™ Drain current: 6.9A Pulsed drain current: 46A Gate-source voltage: ±30V Drain-source voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NRVTS1545EMFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 45V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry Max. load current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MUR4100EG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 4A; bulk; Ifsm: 70A; CASE267-05; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: bulk Max. forward impulse current: 70A Case: CASE267-05 Max. forward voltage: 1.85V Reverse recovery time: 75ns |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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| FES10G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 10A; reel,tape; Ifsm: 150A; TO277; 40ns Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 40ns Case: TO277 Load current: 10A Max. forward impulse current: 150A Max. off-state voltage: 0.4kV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FES10D | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10A; reel,tape; Ifsm: 150A; TO277; 40ns Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 40ns Case: TO277 Load current: 10A Max. forward impulse current: 150A Max. off-state voltage: 200V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FES10J | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; reel,tape; Ifsm: 150A; TO277; 30ns Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 30ns Case: TO277 Load current: 10A Max. forward impulse current: 150A Max. off-state voltage: 0.6kV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ES1A | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Mounting: SMD Capacitance: 7pF Case: SMA Features of semiconductor devices: fast switching Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 15ns Leakage current: 0.1mA Max. forward voltage: 0.92V Load current: 1A Power dissipation: 1.47W Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: reel; tape |
на замовлення 2550 шт: термін постачання 21-30 дні (днів) |
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MC74HC163ADG | ONSEMI |
Category: Counters/dividersDescription: IC: digital; 4bit,binary counter,presettable,synchronous reset Type of integrated circuit: digital Kind of integrated circuit: 4bit; binary counter; presettable; synchronous reset Technology: CMOS Mounting: SMD Case: SOIC16 Family: HC Number of channels: 1 Supply voltage: 2...6V DC Number of inputs: 9 Manufacturer series: HC Kind of package: tube Operating temperature: -55...125°C |
на замовлення 308 шт: термін постачання 21-30 дні (днів) |
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MC74HC163ADR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; 4bit,binary counter,presettable,synchronous reset Type of integrated circuit: digital Kind of integrated circuit: 4bit; binary counter; presettable; synchronous reset Technology: CMOS Mounting: SMD Case: SOIC16 Family: HC Number of channels: 1 Supply voltage: 2...6V DC Number of inputs: 9 Manufacturer series: HC Kind of package: reel; tape Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC818-40LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NSVBC818-40LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCV7812BD2TR4G | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5337BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 4.7V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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1N5337BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 4.7V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 3200 шт: термін постачання 21-30 дні (днів) |
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MC74HCT4051ADTG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Number of inputs: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 2...6V DC; 2...12V DC Kind of package: tube |
на замовлення 297 шт: термін постачання 21-30 дні (днів) |
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MC74HCT4051ADG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Number of inputs: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 2...6V DC; 2...12V DC Kind of package: tube |
на замовлення 234 шт: термін постачання 21-30 дні (днів) |
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| M74HCT4051ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Number of inputs: 11 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 2...6V DC; 2...12V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74HCT4051ADR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Number of inputs: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 2...6V DC; 2...12V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FDMT80080DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Pulsed drain current: 1453A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 2.22mΩ Mounting: SMD Gate charge: 273nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FSV10100V | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 100V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.67V Max. forward impulse current: 180A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NE592D8R2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: video amplifier; 120MHz; Ch: 2; ±8VDC; SO8; 100V/V,400V/V Type of integrated circuit: video amplifier Mounting: SMT Number of channels: 2 Case: SO8 Operating temperature: 0...70°C Bandwidth: 120MHz Kind of package: reel; tape Input bias current: 40µA Voltage supply range: ± 8V DC Gain: 100V/V; 400V/V Input offset current: 6µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| S210 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Mounting: SMD Case: SMB Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 2A Max. forward voltage: 0.85V Max. forward impulse current: 50A Max. off-state voltage: 100V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| S210FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape Mounting: SMD Case: SOD123F Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 2A Max. forward voltage: 0.85V Max. forward impulse current: 50A Max. off-state voltage: 100V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDP42AN15A0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB Mounting: THT Gate charge: 39nC On-state resistance: 0.107Ω Gate-source voltage: ±20V Drain current: 24A Power dissipation: 150W Drain-source voltage: 150V Polarisation: unipolar Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PowerTrench® Case: TO220AB |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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| MM3Z18VB | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 18V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Manufacturer series: MM3ZxxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MM3Z18VC | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323F; single diode; MM3Z Type of diode: Zener Power dissipation: 0.2W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Manufacturer series: MM3Z |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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QSD2030F | ONSEMI |
Category: PhotodiodesDescription: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black Mounting: THT Wavelength: 700...1100nm Wavelength of peak sensitivity: 880nm LED diameter: 5mm Operating voltage: 1.3V Viewing angle: 20° LED lens: black Front: convex Type of photoelement: photodiode |
на замовлення 1966 шт: термін постачання 21-30 дні (днів) |
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QSD2030 | ONSEMI |
Category: PhotodiodesDescription: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex Mounting: THT Wavelength: 400...1100nm Wavelength of peak sensitivity: 880nm LED diameter: 5mm Operating voltage: 1.3V Viewing angle: 40° LED lens: transparent Front: convex Type of photoelement: photodiode |
на замовлення 461 шт: термін постачання 21-30 дні (днів) |
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DTC114EET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 Power dissipation: 0.2/0.3W |
на замовлення 713 шт: термін постачання 21-30 дні (днів) |
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| DTC114YET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DTC114EM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 Power dissipation: 0.6W Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DTC114YM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 Power dissipation: 0.6W Quantity in set/package: 8000pcs. |
на замовлення 5500 шт: термін постачання 21-30 дні (днів) |
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| NSV1SS400T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD523 Max. forward voltage: 1.2V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5353BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 16V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 16V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
FAN3224TMX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -4.3...2.8A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 20ns Pulse fall time: 17ns Kind of package: reel; tape Kind of output: non-inverting |
на замовлення 1179 шт: термін постачання 21-30 дні (днів) |
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FAN3224CMX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -4.3...2.8A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 20ns Pulse fall time: 17ns Kind of package: reel; tape Kind of output: non-inverting |
на замовлення 2488 шт: термін постачання 21-30 дні (днів) |
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4N32M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Number of channels: 1 Insulation voltage: 2.5kV Collector-emitter voltage: 30V CTR@If: 50%@10mA Kind of output: Darlington Case: DIP6 Type of optocoupler: optocoupler Mounting: THT Turn-on time: 5µs Turn-off time: 0.1ms |
на замовлення 993 шт: термін постачання 21-30 дні (днів) |
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4N32SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Number of channels: 1 Insulation voltage: 2.5kV Collector-emitter voltage: 30V Kind of output: Darlington Case: Gull wing 6 Type of optocoupler: optocoupler Mounting: SMD Turn-on time: 5µs Turn-off time: 0.1ms |
на замовлення 124 шт: термін постачання 21-30 дні (днів) |
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FDC637AN | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2258 шт: термін постачання 21-30 дні (днів) |
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|
ES3J | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 1.7V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 1.66W Capacitance: 45pF |
на замовлення 342 шт: термін постачання 21-30 дні (днів) |
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GBU8M | ONSEMI |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
FQAF11N90C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF Polarisation: unipolar Gate charge: 80nC On-state resistance: 1.1Ω Drain current: 4.4A Gate-source voltage: ±30V Power dissipation: 120W Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Technology: QFET® Mounting: THT Case: TO3PF Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FFSH15120ADN-F155 | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.75V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
| MC74AC374DWR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
товару немає в наявності
В кошику
од. на суму грн.
| FDMC012N03 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| FAN7382MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,gate driver; MillerDrive™
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Protection: undervoltage UVP
Operating temperature: -40...125°C
Output current: -650...350mA
Impulse rise time: 140ns
Pulse fall time: 80ns
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Kind of integrated circuit: gate driver; high-/low-side
Topology: H-bridge
Type of integrated circuit: driver
Technology: MillerDrive™
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,gate driver; MillerDrive™
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Protection: undervoltage UVP
Operating temperature: -40...125°C
Output current: -650...350mA
Impulse rise time: 140ns
Pulse fall time: 80ns
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Kind of integrated circuit: gate driver; high-/low-side
Topology: H-bridge
Type of integrated circuit: driver
Technology: MillerDrive™
на замовлення 1209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 139.99 грн |
| 10+ | 81.66 грн |
| 25+ | 68.33 грн |
| 100+ | 60.83 грн |
| NUP2301MW6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC88; Ch: 2; reel,tape; ESD
Case: SC88
Mounting: SMD
Kind of package: reel; tape
Type of diode: diode arrays
Version: ESD
Number of channels: 2
Max. off-state voltage: 70V
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC88; Ch: 2; reel,tape; ESD
Case: SC88
Mounting: SMD
Kind of package: reel; tape
Type of diode: diode arrays
Version: ESD
Number of channels: 2
Max. off-state voltage: 70V
на замовлення 2668 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.23 грн |
| 24+ | 17.50 грн |
| 50+ | 14.83 грн |
| 100+ | 13.92 грн |
| 1SMB5930BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 949 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.43 грн |
| 25+ | 16.83 грн |
| 30+ | 14.33 грн |
| 36+ | 11.67 грн |
| 50+ | 8.58 грн |
| 100+ | 7.00 грн |
| 200+ | 6.75 грн |
| SZ1SMB5930BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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В кошику
од. на суму грн.
| MMSZ5246BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 6630 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.97 грн |
| 77+ | 5.42 грн |
| 84+ | 5.00 грн |
| 110+ | 3.80 грн |
| 130+ | 3.21 грн |
| 500+ | 2.10 грн |
| 1000+ | 1.74 грн |
| MM3Z16VST1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 6005 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.49 грн |
| 143+ | 2.92 грн |
| 215+ | 1.94 грн |
| 500+ | 1.51 грн |
| 1000+ | 1.39 грн |
| 3000+ | 1.32 грн |
| BZX84C16LT1G | ![]() |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 2592 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.28 грн |
| 117+ | 3.58 грн |
| 174+ | 2.40 грн |
| 208+ | 2.01 грн |
| 500+ | 1.34 грн |
| 1000+ | 1.13 грн |
| MC33272ADR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 2; ±1.5÷18VDC,3÷36VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Type of integrated circuit: operational amplifier
Input offset voltage: 0.1mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Slew rate: 10V/μs
Bandwidth: 24MHz
Kind of package: reel; tape
Number of channels: dual; 2
Case: SO8
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 2; ±1.5÷18VDC,3÷36VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Type of integrated circuit: operational amplifier
Input offset voltage: 0.1mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Slew rate: 10V/μs
Bandwidth: 24MHz
Kind of package: reel; tape
Number of channels: dual; 2
Case: SO8
на замовлення 1827 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.84 грн |
| 10+ | 47.50 грн |
| MM74HCT32M |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HCT
Technology: CMOS
Kind of package: tube
Operating temperature: -40...85°C
Delay time: 10ns
Supply voltage: 4.5...5.5V DC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HCT
Technology: CMOS
Kind of package: tube
Operating temperature: -40...85°C
Delay time: 10ns
Supply voltage: 4.5...5.5V DC
на замовлення 249 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.41 грн |
| 16+ | 27.00 грн |
| 74ACT32SCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: ACT
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: ACT
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| 74ACT32MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: ACT
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: ACT
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| MMBF5484 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 1294 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.56 грн |
| 47+ | 9.00 грн |
| 100+ | 8.00 грн |
| 500+ | 7.50 грн |
| 1000+ | 6.67 грн |
| FDPF12N50T |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 176 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 118.33 грн |
| 10+ | 104.16 грн |
| 50+ | 94.16 грн |
| FQNL2N50BTA |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.5W
Case: TO92L
Mounting: THT
Kind of package: Ammo Pack
Gate charge: 8nC
On-state resistance: 5.3Ω
Drain current: 0.22A
Pulsed drain current: 1.4A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: QFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.5W
Case: TO92L
Mounting: THT
Kind of package: Ammo Pack
Gate charge: 8nC
On-state resistance: 5.3Ω
Drain current: 0.22A
Pulsed drain current: 1.4A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: QFET®
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| FDB12N50FTM-WS |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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| FDB12N50TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: DMOS; UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: DMOS; UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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| NRVTS1545EMFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 30A
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| MUR4100EG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; bulk; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: bulk
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; bulk; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: bulk
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
на замовлення 81 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.69 грн |
| 14+ | 31.66 грн |
| FES10G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; reel,tape; Ifsm: 150A; TO277; 40ns
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 40ns
Case: TO277
Load current: 10A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; reel,tape; Ifsm: 150A; TO277; 40ns
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 40ns
Case: TO277
Load current: 10A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Kind of package: reel; tape
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| FES10D |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; reel,tape; Ifsm: 150A; TO277; 40ns
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 40ns
Case: TO277
Load current: 10A
Max. forward impulse current: 150A
Max. off-state voltage: 200V
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; reel,tape; Ifsm: 150A; TO277; 40ns
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 40ns
Case: TO277
Load current: 10A
Max. forward impulse current: 150A
Max. off-state voltage: 200V
Kind of package: reel; tape
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| FES10J |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; reel,tape; Ifsm: 150A; TO277; 30ns
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 30ns
Case: TO277
Load current: 10A
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; reel,tape; Ifsm: 150A; TO277; 30ns
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 30ns
Case: TO277
Load current: 10A
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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| ES1A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Case: SMA
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Leakage current: 0.1mA
Max. forward voltage: 0.92V
Load current: 1A
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Case: SMA
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Leakage current: 0.1mA
Max. forward voltage: 0.92V
Load current: 1A
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
на замовлення 2550 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.23 грн |
| 29+ | 14.83 грн |
| 50+ | 11.92 грн |
| 100+ | 10.83 грн |
| 250+ | 9.42 грн |
| 500+ | 8.42 грн |
| 1000+ | 8.17 грн |
| MC74HC163ADG |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,presettable,synchronous reset
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; presettable; synchronous reset
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: HC
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 9
Manufacturer series: HC
Kind of package: tube
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,presettable,synchronous reset
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; presettable; synchronous reset
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: HC
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 9
Manufacturer series: HC
Kind of package: tube
Operating temperature: -55...125°C
на замовлення 308 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.56 грн |
| 11+ | 39.75 грн |
| 12+ | 35.16 грн |
| 25+ | 29.33 грн |
| 48+ | 24.92 грн |
| 96+ | 20.67 грн |
| MC74HC163ADR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,presettable,synchronous reset
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; presettable; synchronous reset
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: HC
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 9
Manufacturer series: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,presettable,synchronous reset
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; presettable; synchronous reset
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: HC
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 9
Manufacturer series: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
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| BC818-40LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| NSVBC818-40LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| NCV7812BD2TR4G |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| 1N5337BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 149.86 грн |
| 1N5337BRLG | ![]() |
![]() |
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 3200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.00 грн |
| 16+ | 26.67 грн |
| 18+ | 23.42 грн |
| 100+ | 14.92 грн |
| 500+ | 12.92 грн |
| MC74HCT4051ADTG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: tube
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: tube
на замовлення 297 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.10 грн |
| 10+ | 51.83 грн |
| 48+ | 46.16 грн |
| 288+ | 39.41 грн |
| MC74HCT4051ADG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: tube
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: tube
на замовлення 234 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.18 грн |
| 10+ | 43.25 грн |
| 25+ | 35.83 грн |
| 48+ | 31.58 грн |
| 96+ | 28.00 грн |
| M74HCT4051ADTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: reel; tape
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| MC74HCT4051ADR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: reel; tape
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| FDMT80080DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 1453A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2.22mΩ
Mounting: SMD
Gate charge: 273nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 1453A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2.22mΩ
Mounting: SMD
Gate charge: 273nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FSV10100V |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 180A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 180A
Kind of package: reel; tape
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| NE592D8R2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: video amplifier; 120MHz; Ch: 2; ±8VDC; SO8; 100V/V,400V/V
Type of integrated circuit: video amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: 0...70°C
Bandwidth: 120MHz
Kind of package: reel; tape
Input bias current: 40µA
Voltage supply range: ± 8V DC
Gain: 100V/V; 400V/V
Input offset current: 6µA
Category: SMD operational amplifiers
Description: IC: video amplifier; 120MHz; Ch: 2; ±8VDC; SO8; 100V/V,400V/V
Type of integrated circuit: video amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: 0...70°C
Bandwidth: 120MHz
Kind of package: reel; tape
Input bias current: 40µA
Voltage supply range: ± 8V DC
Gain: 100V/V; 400V/V
Input offset current: 6µA
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| S210 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
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| S210FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
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| FDP42AN15A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
Gate charge: 39nC
On-state resistance: 0.107Ω
Gate-source voltage: ±20V
Drain current: 24A
Power dissipation: 150W
Drain-source voltage: 150V
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
Gate charge: 39nC
On-state resistance: 0.107Ω
Gate-source voltage: ±20V
Drain current: 24A
Power dissipation: 150W
Drain-source voltage: 150V
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: TO220AB
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 207.30 грн |
| 5+ | 151.66 грн |
| 10+ | 132.49 грн |
| 50+ | 107.49 грн |
| MM3Z18VB |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
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| MM3Z18VC |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323F; single diode; MM3Z
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323F; single diode; MM3Z
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3Z
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| QSD2030F |
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Виробник: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Mounting: THT
Wavelength: 700...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 20°
LED lens: black
Front: convex
Type of photoelement: photodiode
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Mounting: THT
Wavelength: 700...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 20°
LED lens: black
Front: convex
Type of photoelement: photodiode
на замовлення 1966 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.18 грн |
| 14+ | 30.50 грн |
| 25+ | 24.58 грн |
| 50+ | 20.42 грн |
| 100+ | 17.75 грн |
| QSD2030 |
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Виробник: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Mounting: THT
Wavelength: 400...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 40°
LED lens: transparent
Front: convex
Type of photoelement: photodiode
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Mounting: THT
Wavelength: 400...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 40°
LED lens: transparent
Front: convex
Type of photoelement: photodiode
на замовлення 461 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.02 грн |
| 24+ | 17.42 грн |
| 28+ | 15.42 грн |
| 100+ | 13.00 грн |
| 250+ | 11.58 грн |
| DTC114EET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Power dissipation: 0.2/0.3W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Power dissipation: 0.2/0.3W
на замовлення 713 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.87 грн |
| 62+ | 6.75 грн |
| 99+ | 4.22 грн |
| 123+ | 3.40 грн |
| 500+ | 2.18 грн |
| DTC114YET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Power dissipation: 0.2W
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| DTC114EM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
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| DTC114YM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
на замовлення 5500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.41 грн |
| 19+ | 22.33 грн |
| 23+ | 18.25 грн |
| 100+ | 8.13 грн |
| 500+ | 4.99 грн |
| 1000+ | 4.27 грн |
| 2000+ | 3.88 грн |
| 2500+ | 3.78 грн |
| NSV1SS400T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Max. forward voltage: 1.2V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Max. forward voltage: 1.2V
Kind of package: reel; tape
Application: automotive industry
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| 1N5353BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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| FAN3224TMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
на замовлення 1179 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 103.20 грн |
| 10+ | 65.83 грн |
| 25+ | 56.66 грн |
| 100+ | 49.16 грн |
| FAN3224CMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
на замовлення 2488 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 122.94 грн |
| 5+ | 108.33 грн |
| 25+ | 98.33 грн |
| 100+ | 91.66 грн |
| 4N32M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Number of channels: 1
Insulation voltage: 2.5kV
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Number of channels: 1
Insulation voltage: 2.5kV
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 5µs
Turn-off time: 0.1ms
на замовлення 993 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.59 грн |
| 17+ | 25.83 грн |
| 25+ | 23.75 грн |
| 50+ | 22.33 грн |
| 100+ | 20.92 грн |
| 500+ | 18.33 грн |
| 4N32SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Number of channels: 1
Insulation voltage: 2.5kV
Collector-emitter voltage: 30V
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Number of channels: 1
Insulation voltage: 2.5kV
Collector-emitter voltage: 30V
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 5µs
Turn-off time: 0.1ms
на замовлення 124 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.15 грн |
| 13+ | 34.08 грн |
| 25+ | 30.33 грн |
| 50+ | 27.75 грн |
| 100+ | 26.50 грн |
| FDC637AN |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2258 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.71 грн |
| 11+ | 38.58 грн |
| 100+ | 26.92 грн |
| ES3J |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
на замовлення 342 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.64 грн |
| 50+ | 16.25 грн |
| 100+ | 15.08 грн |
| GBU8M |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| FQAF11N90C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 1.1Ω
Drain current: 4.4A
Gate-source voltage: ±30V
Power dissipation: 120W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Technology: QFET®
Mounting: THT
Case: TO3PF
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 1.1Ω
Drain current: 4.4A
Gate-source voltage: ±30V
Power dissipation: 120W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Technology: QFET®
Mounting: THT
Case: TO3PF
Kind of package: tube
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| FFSH15120ADN-F155 |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.































