| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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CAT24C256YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8 Type of integrated circuit: EEPROM memory Mounting: SMD Case: TSSOP8 Memory: 256kb EEPROM Memory organisation: 32kx8bit Interface: I2C Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
на замовлення 46 шт: термін постачання 14-30 дні (днів) |
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| NV24C256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| CAV24C256WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CAV24C256YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| NCP1246BLD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| MC74HC165ADR2G-Q | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC Type of integrated circuit: digital Mounting: SMD Delay time: 225ns Supply voltage: 2...6V Kind of output: complementary; push-pull Operating temperature: -55...125°C Trigger: positive-edge-triggered Number of inputs: 9 Case: SOIC16 Family: HC Number of outputs: 1 Kind of integrated circuit: parallel in; shift register Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74HC165ADTR2G-Q | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC Type of integrated circuit: digital Mounting: SMD Delay time: 225ns Supply voltage: 2...6V Kind of output: complementary; push-pull Operating temperature: -55...125°C Trigger: positive-edge-triggered Number of inputs: 9 Case: TSSOP16 Family: HC Number of outputs: 1 Kind of integrated circuit: parallel in; shift register Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC74HC165AMN2TWG | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9 Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V Kind of output: complementary; push-pull Operating temperature: -55...125°C Trigger: positive-edge-triggered Number of inputs: 9 Case: QFN16 Family: HC Number of outputs: 1 Kind of integrated circuit: parallel in; shift register Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MC74HC165AMN2TWG-Q | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C Type of integrated circuit: digital Mounting: SMD Delay time: 225ns Supply voltage: 4.5...5.5V Kind of output: complementary Operating temperature: -55...125°C Number of inputs: 9 Case: QFN16 Kind of integrated circuit: parallel in; shift register |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDS3590 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8 Kind of channel: enhancement Kind of package: reel; tape Type of transistor: N-MOSFET Case: SO8 Mounting: SMD On-state resistance: 86mΩ Power dissipation: 2.5W Drain current: 6.5A Gate-source voltage: ±20V Drain-source voltage: 80V Polarisation: unipolar |
на замовлення 427 шт: термін постачання 14-30 дні (днів) |
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KSC2383YTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 160...320 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
на замовлення 2970 шт: термін постачання 14-30 дні (днів) |
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KSC2383OTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 100...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
на замовлення 1137 шт: термін постачання 14-30 дні (днів) |
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FDMS86101 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FDMS86101A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 180A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDMS86101DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC14021BDR2G | ONSEMI |
Category: Shift registersDescription: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Operating temperature: -55...125°C Technology: CMOS Quiescent current: 600µA Kind of package: reel; tape Case: SO16 Family: HEF4000B Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous Number of channels: 1 |
на замовлення 9173 шт: термін постачання 14-30 дні (днів) |
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MC14049BDG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Operating temperature: -55...125°C Technology: CMOS Kind of package: tube Case: SO16 Kind of integrated circuit: buffer; inverting Number of channels: 6 |
на замовлення 193 шт: термін постачання 14-30 дні (днів) |
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MC14082BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Kind of package: tube Technology: CMOS Type of integrated circuit: digital Number of channels: dual; 2 Mounting: SMD Family: HEF4000B Case: SO14 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 4 Supply voltage: 3...18V DC Kind of gate: AND |
на замовлення 413 шт: термін постачання 14-30 дні (днів) |
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MC14025BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Kind of package: tube Number of channels: triple; 3 Delay time: 130ns Number of inputs: 3 Supply voltage: 3...18V DC Family: HEF4000B Technology: CMOS Type of integrated circuit: digital Case: SO14 Mounting: SMD Kind of gate: NOR |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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MC14013BDTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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MC74ACT74DG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Trigger: positive-edge-triggered Manufacturer series: ACT |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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MC74ACT74DTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Number of inputs: 4 Technology: TTL Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: ACT Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Manufacturer series: ACT |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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ES2D | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.66W Leakage current: 0.35mA Capacitance: 18pF |
на замовлення 2332 шт: термін постачання 14-30 дні (днів) |
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| ES2DAF | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA flat Max. forward voltage: 0.95V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74HC164ADR2G-Q | ONSEMI |
Category: Shift registersDescription: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: parallel in Mounting: SMD Case: SOIC14 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V Number of channels: 1 Delay time: 250ns Kind of output: push-pull Number of inputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HC164ADTR2G-Q | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: TSSOP14 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V Number of channels: 1 Delay time: 250ns Kind of output: push-pull Trigger: positive-edge-triggered Number of inputs: 2 Number of outputs: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HC164BDR2G | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: SOIC14 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V Number of channels: 1 Kind of output: push-pull Trigger: positive-edge-triggered Number of inputs: 2 Number of outputs: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| N93C66BT3ETAG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 1.7...5.5V Clock frequency: 4MHz Mounting: SMD Case: TDFN8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| CAT93C66VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 1.8...5.5V Clock frequency: 2MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| CAV93C66VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 2.5...5.5V Clock frequency: 2MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 250ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| CAV93C66YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 2.5...5.5V Clock frequency: 2MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 250ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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FQP9N90C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
на замовлення 57 шт: термін постачання 14-30 дні (днів) |
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FQPF9N90CT | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Pulsed drain current: 32A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
на замовлення 977 шт: термін постачання 14-30 дні (днів) |
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| TL331SN4T3G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TL331VSN4T3G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TL331SN4T1G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MBR0530 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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BD13810STU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Case: TO126ISO Current gain: 63...160 Mounting: THT Power dissipation: 12.5W Kind of package: tube |
на замовлення 1139 шт: термін постачання 14-30 дні (днів) |
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| BD138G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Case: TO225 Current gain: 40...250 Mounting: THT Power dissipation: 12.5W Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MOC3163M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6 Case: DIP6 Output voltage: 600V Number of channels: 1 Mounting: THT Slew rate: 1kV/μs Kind of output: zero voltage crossing driver Insulation voltage: 4.17kV Type of optocoupler: optotriac Trigger current: 5mA Manufacturer series: MOC3163M |
на замовлення 1058 шт: термін постачання 14-30 дні (днів) |
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MB2S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.5A Max. forward impulse current: 35A Case: SO4 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 52 шт: термін постачання 14-30 дні (днів) |
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| LM301ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape Type of integrated circuit: operational amplifier Number of channels: single; 1 Mounting: SMT Voltage supply range: ± 5...15V DC Case: SO8 Operating temperature: 0...70°C Input offset voltage: 7.5mV Kind of package: reel; tape Input bias current: 0.25µA Input offset current: 50nA Slew rate: 10V/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC14555BDG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3 Operating temperature: -55...125°C Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Technology: CMOS Number of inputs: 3 Kind of package: tube Case: SOIC16 Family: HEF4000B Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer Number of channels: 2 |
на замовлення 199 шт: термін постачання 14-30 дні (днів) |
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| FSB50450US | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Type of integrated circuit: driver Case: Gull wing; PowerSMD Integrated circuit features: MOSFET Mounting: SMD Operating voltage: 500V Insulation voltage: 1.5kV Power dissipation: 14W |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||
| FSB50250AS | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W Operating temperature: -40...150°C Output current: 1.2A Type of integrated circuit: driver DC supply current: 0.2mA Power dissipation: 13.4W Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: Gull wing; PowerSMD Operating voltage: 500V Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||
| FSB50250US | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Type of integrated circuit: driver Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: PowerSMD Operating voltage: 500V Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FSB50450AS | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W Type of integrated circuit: driver Case: Gull wing; PowerSMD Integrated circuit features: MOSFET Mounting: SMD Operating voltage: 500V Insulation voltage: 1.5kV Power dissipation: 14W Output current: 1.5A DC supply current: 0.2mA Operating temperature: -40...150°C |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||
| FSB50825AB | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV Operating temperature: -40...150°C Output current: 3.6A Type of integrated circuit: driver DC supply current: 0.2mA Power dissipation: 14.2W Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: DIP Operating voltage: 250V Mounting: THT Supply voltage: 150V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FSB50825AS | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W Operating temperature: -40...150°C Output current: 3.6A Type of integrated circuit: driver DC supply current: 0.2mA Power dissipation: 14.2W Integrated circuit features: MOSFET Insulation voltage: 1.5kV Case: Gull wing; PowerSMD Operating voltage: 250V Mounting: SMD Supply voltage: 150V |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||
|
FDD6637 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK Mounting: SMD Power dissipation: 57W Gate charge: 35nC Polarisation: unipolar Technology: PowerTrench® Drain current: -55A Kind of channel: enhancement Drain-source voltage: -35V Type of transistor: P-MOSFET Gate-source voltage: ±25V Kind of package: reel; tape Case: DPAK On-state resistance: 19mΩ |
на замовлення 2304 шт: термін постачання 14-30 дні (днів) |
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| NTLJS2103PTBG | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6 Drain current: -7.7A Gate charge: 12.8nC On-state resistance: 25mΩ Power dissipation: 3.3W Gate-source voltage: ±8V Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: WDFN6 Polarisation: unipolar Pulsed drain current: -24A Drain-source voltage: -12V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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MC74HC04ADR2G-Q | ONSEMI |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA Type of integrated circuit: digital Number of channels: 6 Number of inputs: 6 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 2...6V Operating temperature: -55...125°C Family: HC Kind of output: push-pull Quiescent current: 2µA Kind of integrated circuit: inverter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NUP2114UCMR6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Number of channels: 2 Kind of package: reel; tape Version: ESD |
на замовлення 22 шт: термін постачання 14-30 дні (днів) |
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| SNUP2114UCMR6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Number of channels: 2 Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP59301DS30R4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1 Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59300 Operating temperature: -40...125°C Input voltage: 2.24...13.5V Output voltage: 3V Output current: 3A Voltage drop: 0.5V Tolerance: ±2.5% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP59301DS28R4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59300 Operating temperature: -40...125°C Input voltage: 2.24...13.5V Output voltage: 2.8V Output current: 3A Voltage drop: 0.5V Tolerance: ±2.5% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
BUZ11-NR4941 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube |
на замовлення 84 шт: термін постачання 14-30 дні (днів) |
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BUZ11-NR4941 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: N Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220 Gate-source voltage: 20V On-state resistance: 40mΩ Mounting: THT Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 200ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC33067PG | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1.5A Mounting: THT Case: DIP16 Operating temperature: -40...85°C Output voltage: 5...5.2V Input voltage: 20V Frequency: 1MHz Topology: flyback Manufacturer series: MC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
1SMB5924BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 9.1V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB |
на замовлення 2369 шт: термін постачання 14-30 дні (днів) |
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| CAT24C256YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: TSSOP8
Memory: 256kb EEPROM
Memory organisation: 32kx8bit
Interface: I2C
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: TSSOP8
Memory: 256kb EEPROM
Memory organisation: 32kx8bit
Interface: I2C
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.59 грн |
| NV24C256MUW3VTBG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAV24C256WE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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В кошику
од. на суму грн.
| CAV24C256YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCP1246BLD065R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74HC165ADR2G-Q |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: SOIC16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: SOIC16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
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| MC74HC165ADTR2G-Q |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: TSSOP16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: TSSOP16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
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| MC74HC165AMN2TWG |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: QFN16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: QFN16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
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| MC74HC165AMN2TWG-Q |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 4.5...5.5V
Kind of output: complementary
Operating temperature: -55...125°C
Number of inputs: 9
Case: QFN16
Kind of integrated circuit: parallel in; shift register
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 4.5...5.5V
Kind of output: complementary
Operating temperature: -55...125°C
Number of inputs: 9
Case: QFN16
Kind of integrated circuit: parallel in; shift register
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В кошику
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| FDS3590 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
Mounting: SMD
On-state resistance: 86mΩ
Power dissipation: 2.5W
Drain current: 6.5A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
Mounting: SMD
On-state resistance: 86mΩ
Power dissipation: 2.5W
Drain current: 6.5A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Polarisation: unipolar
на замовлення 427 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.86 грн |
| 10+ | 60.66 грн |
| 25+ | 49.53 грн |
| 100+ | 36.89 грн |
| KSC2383YTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 2970 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.38 грн |
| 13+ | 33.74 грн |
| 14+ | 30.66 грн |
| 50+ | 19.11 грн |
| 100+ | 14.87 грн |
| 2000+ | 10.05 грн |
| KSC2383OTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 1137 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.38 грн |
| 15+ | 29.08 грн |
| 17+ | 25.10 грн |
| 50+ | 17.20 грн |
| 100+ | 14.62 грн |
| 500+ | 10.80 грн |
| FDMS86101 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| FDMS86101A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS86101DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| MC14021BDR2G |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 600µA
Kind of package: reel; tape
Case: SO16
Family: HEF4000B
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 600µA
Kind of package: reel; tape
Case: SO16
Family: HEF4000B
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
на замовлення 9173 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.01 грн |
| 18+ | 23.10 грн |
| 25+ | 19.36 грн |
| 100+ | 16.12 грн |
| 2500+ | 14.29 грн |
| MC14049BDG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.80 грн |
| 15+ | 27.92 грн |
| 17+ | 25.26 грн |
| 25+ | 22.19 грн |
| 48+ | 20.36 грн |
| 144+ | 18.61 грн |
| MC14082BDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Number of channels: dual; 2
Mounting: SMD
Family: HEF4000B
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Kind of gate: AND
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Number of channels: dual; 2
Mounting: SMD
Family: HEF4000B
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Kind of gate: AND
на замовлення 413 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.48 грн |
| 30+ | 14.13 грн |
| 55+ | 12.13 грн |
| MC14025BDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Kind of package: tube
Number of channels: triple; 3
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of gate: NOR
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Kind of package: tube
Number of channels: triple; 3
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of gate: NOR
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.64 грн |
| 19+ | 22.52 грн |
| MC14013BDTR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| MC74ACT74DG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.80 грн |
| 19+ | 23.02 грн |
| MC74ACT74DTR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: ACT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: ACT
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| ES2D |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
на замовлення 2332 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.11 грн |
| 26+ | 16.54 грн |
| 50+ | 12.46 грн |
| 100+ | 11.38 грн |
| 250+ | 10.47 грн |
| ES2DAF |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
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| MC74HC164ADR2G-Q |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Delay time: 250ns
Kind of output: push-pull
Number of inputs: 2
Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Delay time: 250ns
Kind of output: push-pull
Number of inputs: 2
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| MC74HC164ADTR2G-Q |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Delay time: 250ns
Kind of output: push-pull
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Delay time: 250ns
Kind of output: push-pull
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
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| MC74HC164BDR2G |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Kind of output: push-pull
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Kind of output: push-pull
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
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| N93C66BT3ETAG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| CAT93C66VI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| CAV93C66VE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| CAV93C66YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| FQP9N90C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 319.47 грн |
| 10+ | 181.15 грн |
| 50+ | 172.84 грн |
| FQPF9N90CT |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 977 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 332.00 грн |
| 5+ | 221.04 грн |
| 10+ | 182.81 грн |
| TL331SN4T3G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| TL331VSN4T3G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| TL331SN4T1G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| MBR0530 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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Мінімальне замовлення: 10 шт
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| BD13810STU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
на замовлення 1139 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.80 грн |
| 25+ | 25.01 грн |
| 120+ | 22.10 грн |
| 480+ | 19.86 грн |
| BD138G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Current gain: 40...250
Mounting: THT
Power dissipation: 12.5W
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Current gain: 40...250
Mounting: THT
Power dissipation: 12.5W
Kind of package: bulk
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| MOC3163M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Output voltage: 600V
Number of channels: 1
Mounting: THT
Slew rate: 1kV/μs
Kind of output: zero voltage crossing driver
Insulation voltage: 4.17kV
Type of optocoupler: optotriac
Trigger current: 5mA
Manufacturer series: MOC3163M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Output voltage: 600V
Number of channels: 1
Mounting: THT
Slew rate: 1kV/μs
Kind of output: zero voltage crossing driver
Insulation voltage: 4.17kV
Type of optocoupler: optotriac
Trigger current: 5mA
Manufacturer series: MOC3163M
на замовлення 1058 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.59 грн |
| 11+ | 40.38 грн |
| 25+ | 37.73 грн |
| 50+ | 35.81 грн |
| 100+ | 34.07 грн |
| 500+ | 30.00 грн |
| 750+ | 29.00 грн |
| 1000+ | 28.34 грн |
| MB2S |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 52 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.27 грн |
| 14+ | 30.91 грн |
| 16+ | 26.84 грн |
| 50+ | 18.20 грн |
| LM301ADR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.25µA
Input offset current: 50nA
Slew rate: 10V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.25µA
Input offset current: 50nA
Slew rate: 10V/μs
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| MC14555BDG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 3
Kind of package: tube
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer
Number of channels: 2
Category: Decoders, multiplexers, switches
Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 3
Kind of package: tube
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer
Number of channels: 2
на замовлення 199 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 34.73 грн |
| FSB50450US |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
Power dissipation: 14W
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
Power dissipation: 14W
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Мінімальне замовлення: 450 шт
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| FSB50250AS |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Operating temperature: -40...150°C
Output current: 1.2A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 13.4W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 500V
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Operating temperature: -40...150°C
Output current: 1.2A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 13.4W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 500V
Mounting: SMD
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Мінімальне замовлення: 450 шт
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| FSB50250US |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: PowerSMD
Operating voltage: 500V
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: PowerSMD
Operating voltage: 500V
Mounting: SMD
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| FSB50450AS |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
Power dissipation: 14W
Output current: 1.5A
DC supply current: 0.2mA
Operating temperature: -40...150°C
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
Power dissipation: 14W
Output current: 1.5A
DC supply current: 0.2mA
Operating temperature: -40...150°C
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Мінімальне замовлення: 450 шт
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| FSB50825AB |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: DIP
Operating voltage: 250V
Mounting: THT
Supply voltage: 150V
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: DIP
Operating voltage: 250V
Mounting: THT
Supply voltage: 150V
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| FSB50825AS |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Operating temperature: -40...150°C
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 250V
Mounting: SMD
Supply voltage: 150V
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Operating temperature: -40...150°C
Output current: 3.6A
Type of integrated circuit: driver
DC supply current: 0.2mA
Power dissipation: 14.2W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 250V
Mounting: SMD
Supply voltage: 150V
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Мінімальне замовлення: 450 шт
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| FDD6637 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Mounting: SMD
Power dissipation: 57W
Gate charge: 35nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -55A
Kind of channel: enhancement
Drain-source voltage: -35V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 19mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Mounting: SMD
Power dissipation: 57W
Gate charge: 35nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -55A
Kind of channel: enhancement
Drain-source voltage: -35V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 19mΩ
на замовлення 2304 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 147.66 грн |
| 5+ | 104.70 грн |
| 10+ | 92.24 грн |
| 50+ | 69.80 грн |
| 100+ | 62.32 грн |
| NTLJS2103PTBG |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
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Мінімальне замовлення: 3000 шт
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| MC74HC04ADR2G-Q |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Number of channels: 6
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 2µA
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Number of channels: 6
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 2µA
Kind of integrated circuit: inverter
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| NUP2114UCMR6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Version: ESD
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 58.17 грн |
| 11+ | 39.55 грн |
| 13+ | 33.24 грн |
| SNUP2114UCMR6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
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| NCP59301DS30R4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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| NCP59301DS28R4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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| BUZ11-NR4941 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
на замовлення 84 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 110.07 грн |
| 6+ | 79.11 грн |
| 10+ | 68.55 грн |
| 50+ | 49.44 грн |
| BUZ11-NR4941 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220
Gate-source voltage: 20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220
Gate-source voltage: 20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
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| MC33067PG |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Mounting: THT
Case: DIP16
Operating temperature: -40...85°C
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
Topology: flyback
Manufacturer series: MC
Category: Power switches - integrated circuits
Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Mounting: THT
Case: DIP16
Operating temperature: -40...85°C
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
Topology: flyback
Manufacturer series: MC
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| 1SMB5924BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 9.1V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 9.1V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
на замовлення 2369 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.32 грн |
| 19+ | 22.44 грн |
| 22+ | 19.11 грн |
| 50+ | 12.96 грн |
| 100+ | 11.13 грн |
| 250+ | 9.47 грн |
| 500+ | 8.48 грн |
| 1000+ | 8.14 грн |




























