| Фото | Назва | Виробник | Інформація | 
                    Доступність                     | 
                 Ціна | 
            ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NCP81382LMNTXG | onsemi | 
                                                                                    Description: IC REG SYNC BUCK CONV QFN Packaging: Bulk  | 
                        
                                                             на замовлення 300000 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    |||||||||||||||||||
                                                              | 
                            1N5379B | onsemi | 
                            
                                                         Description: DIODE ZENER 110V 5W AXIALPackaging: Bulk Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 110 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 83.6 V  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            NTBG080N120SC1 | onsemi | 
                            
                                                         Description: SICFET N-CH 1200V 30A D2PAK-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V  | 
                        
                                                             на замовлення 800 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            NTBG080N120SC1 | onsemi | 
                            
                                                         Description: SICFET N-CH 1200V 30A D2PAK-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V  | 
                        
                                                             на замовлення 1035 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            NVBG080N120SC1 | onsemi | 
                            
                                                         Description: SICFET N-CH 1200V 30A D2PAK-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V Qualification: AEC-Q101  | 
                        
                                                             на замовлення 5600 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            NVBG080N120SC1 | onsemi | 
                            
                                                         Description: SICFET N-CH 1200V 30A D2PAK-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V Qualification: AEC-Q101  | 
                        
                                                             на замовлення 6170 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            NVH4L080N120SC1 | onsemi | 
                            
                                                         Description: SICFET N-CH 1200V 29A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V Qualification: AEC-Q101  | 
                        
                                                             на замовлення 51642 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            74LVTH162245GX | onsemi | 
                            
                                                         Description: IC TXRX NON-INVERT 3.6V 54FBGAPackaging: Tape & Reel (TR) Package / Case: 54-LFBGA Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 12mA, 12mA; 32mA, 64mA Supplier Device Package: 54-FBGA (5.5x8)  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            74VCX164245G | onsemi | 
                            
                                                         Description: IC TXRX NON-INVERT 3.6V 54FBGAPackaging: Tray Package / Case: 54-LFBGA Output Type: 3-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 54-FBGA (5.5x8)  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            74LVTH162245G | onsemi | 
                            
                                                         Description: IC TXRX NON-INVERT 3.6V 54FBGAPackaging: Tape & Reel (TR) Package / Case: 54-LFBGA Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 12mA, 12mA; 32mA, 64mA Supplier Device Package: 54-FBGA (5.5x8)  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            FSLV16211GX | onsemi | 
                            
                                                         Description: IC BUS SWITCH 12 X 1:1 54FBGAPackaging: Tape & Reel (TR) Package / Case: 54-LFBGA Mounting Type: Surface Mount Circuit: 12 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 54-FBGA (5.5x8)  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            NCP720BMT170TBG | onsemi | 
                            
                                                         Description: IC REG LINEAR 1.7V 350MA 6-WDFNPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 350mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WDFN (2x2) Voltage - Output (Min/Fixed): 1.7V Control Features: Enable PSRR: 65dB ~ 25dB (1kHz ~ 1MHz) Voltage Dropout (Max): 1.4V @ 350mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            NCP720BMT170TBG | onsemi | 
                            
                                                         Description: IC REG LINEAR 1.7V 350MA 6-WDFNPackaging: Bulk Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 350mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WDFN (2x2) Voltage - Output (Min/Fixed): 1.7V Control Features: Enable PSRR: 65dB ~ 25dB (1kHz ~ 1MHz) Voltage Dropout (Max): 1.4V @ 350mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)  | 
                        
                                                             на замовлення 24000 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            NVMFS5C450NLAFT1G | onsemi | 
                            
                                                         Description: MOSFET N-CH 40V 110A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V Qualification: AEC-Q101  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            NVMFS5C450NLAFT1G | onsemi | 
                            
                                                         Description: MOSFET N-CH 40V 110A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V Qualification: AEC-Q101  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            FQE10N20CTU | onsemi | 
                            
                                                         Description: MOSFET N-CH 200V 4A TO126-3Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2A, 10V Power Dissipation (Max): 12.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-126-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            FCP125N65S3 | onsemi | 
                            
                                                         Description: MOSFET N-CH 650V 24A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V  | 
                        
                                                             на замовлення 2265 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            74VHC573MX | onsemi | 
                            
                                                         Description: IC D-TYPE TRANSP SGL 8:8 20SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 4.5ns Supplier Device Package: 20-SOIC  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            74VHC573MX | onsemi | 
                            
                                                         Description: IC D-TYPE TRANSP SGL 8:8 20SOICPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 4.5ns Supplier Device Package: 20-SOIC  | 
                        
                                                             на замовлення 3 шт: термін постачання 21-31 дні (днів) | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            NXH030F120M3F1PTG | onsemi | 
                            
                                                         Description: MOSFET 4N-CH 1200V 38A 22PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 100W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 800V Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V FET Feature: Depletion Mode Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: 22-PIM (33.8x42.5)  | 
                        
                                                             на замовлення 110 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
| NXH030P120M3F1PTG | onsemi | 
                            
                                                         Description: MOSFET 2N-CH 1200V 42APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 100W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2271pF @ 800V Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V Vgs(th) (Max) @ Id: 4.4V @ 15mA  | 
                        
                                                             на замовлення 28 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    |||||||||||||||||||
                                                              | 
                            MPSA06 | onsemi | 
                            
                                                         Description: TRANS NPN 80V 0.5A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 625 mW  | 
                        
                                                             на замовлення 75233 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            DTC115TET1G | onsemi | 
                            
                                                         Description: TRANS PREBIAS NPN 50V 0.1A SC75Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 100 kOhms  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            DTC115TET1G | onsemi | 
                            
                                                         Description: TRANS PREBIAS NPN 50V 0.1A SC75Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 100 kOhms  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            DTC115TM3T5G | onsemi | 
                            
                                                         Description: TRANS PREBIAS NPN 50V SOT723Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 100 kOhms  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            DTC115TM3T5G | onsemi | 
                            
                                                         Description: TRANS PREBIAS NPN 50V SOT723Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 100 kOhms  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            DTC115TM3T5G | onsemi | 
                            
                                                         Description: TRANS PREBIAS NPN 50V SOT723Packaging: Bulk Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 100 kOhms  | 
                        
                                                             на замовлення 152000 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            KSB772OS | onsemi | 
                            
                                                         Description: TRANS PNP 30V 3A TO-126-3Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            FSB50450A | onsemi | 
                            
                                                         Description: MOSFET IPM 500V 1.5A 23-PWRDIPPackaging: Tube Package / Case: 23-PowerDIP Module (0.573", 14.56mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.5 A Voltage: 500 V  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
| 
                                 | 
                            FSB50450AT | onsemi | 
                            
                                                         Description: MODULE SPM 500V 1.5A 23PWRDIPPackaging: Bulk Package / Case: 23-PowerDIP Module (0.748", 19.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.5 A Voltage: 500 V  | 
                        
                                                             на замовлення 360 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
| 
                                 | 
                            FSB50450AT | onsemi | 
                            
                                                         Description: MODULE SPM 500V 1.5A 23PWRDIPPackaging: Tube Package / Case: 23-PowerDIP Module (0.748", 19.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.5 A Voltage: 500 V  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            NRVSRD620VCTT4RG | onsemi | 
                            
                                                         Description: DIODE ARRAY GP 200V 3A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            NRVSRD620VCTT4RG | onsemi | 
                            
                                                         Description: DIODE ARRAY GP 200V 3A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V  | 
                        
                                                             на замовлення 2327 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            NCV8501PDW50G | onsemi | 
                            
                                                         Description: IC REG LINEAR 5V 150MA 16SOICPackaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 125 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 16-SOIC Voltage - Output (Min/Fixed): 5V Control Features: Enable, Reset Grade: Automotive Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 19 mA Qualification: AEC-Q100  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            NCV8800HDW50R2G | onsemi | 
                            
                                                         Description: IC REG BUCK 5V 1A 16SOICPackaging: Bulk Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 200kHz Voltage - Input (Max): 16V Topology: Buck Supplier Device Package: 16-SOIC Synchronous Rectifier: Yes Voltage - Input (Min): 3.5V Voltage - Output (Min/Fixed): 5V Grade: Automotive  | 
                        
                                                             на замовлення 60716 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            MC74HC02ADR2G-Q | onsemi | 
                            
                                                         Description: QUAD 2-INPUT NOR GATEPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            MC74HC02ADR2G-Q | onsemi | 
                            
                                                         Description: QUAD 2-INPUT NOR GATEPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA  | 
                        
                                                             на замовлення 2387 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            DM7414N | onsemi | 
                            
                                                         Description: IC INVERT SCHMITT 6CH 1IN 14MDIPPackaging: Tube Features: Schmitt Trigger Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: Inverter Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Output High, Low: 800µA, 16mA Number of Inputs: 1 Supplier Device Package: 14-MDIP Input Logic Level - High: 2V Input Logic Level - Low: 0.6V Max Propagation Delay @ V, Max CL: 22ns @ 5V, 15pF Number of Circuits: 6  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            FSB50660SF | onsemi | 
                            
                                                         Description: MODULE SPM 600V 3.1A 23PWRDIPPackaging: Tube Package / Case: 23-PowerDIP Module (0.573", 14.56mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 3.1 A Voltage: 600 V  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            FSB50660SF | onsemi | 
                            
                                                         Description: MODULE SPM 600V 3.1A 23PWRDIPPackaging: Tube Package / Case: 23-PowerDIP Module (0.573", 14.56mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 3.1 A Voltage: 600 V  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            FDMS8570S | onsemi | 
                            
                                                         Description: POWER FIELD-EFFECT TRANSISTOR, 2Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2825 pF @ 13 V  | 
                        
                                                             на замовлення 81000 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
| 
                                 | 
                            MC74VHC1G08DBVT1G | onsemi | 
                            
                                                         Description: IC GATE AND 1CH 2-INP SC74APackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SC-74A Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA  | 
                        
                                                             на замовлення 12000 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
| 
                                 | 
                            MC74VHC1G08DBVT1G | onsemi | 
                            
                                                         Description: IC GATE AND 1CH 2-INP SC74APackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SC-74A Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA  | 
                        
                                                             на замовлення 12709 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
| 
                                 | 
                            MC74VHC1G08DBVT1G-Q | onsemi | 
                            
                                                         Description: SINGLE 2-INPUT AND GATEPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SC-74A Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Grade: Automotive Number of Circuits: 1 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100  | 
                        
                                                             на замовлення 147000 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
| 
                                 | 
                            MC74VHC1G08DBVT1G-Q | onsemi | 
                            
                                                         Description: SINGLE 2-INPUT AND GATEPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SC-74A Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Grade: Automotive Number of Circuits: 1 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100  | 
                        
                                                             на замовлення 148225 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            MC74VHC1G08DTT1H | onsemi | 
                            
                                                         Description: IC GATE AND 1CH 2-INP 5TSOPPackaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-TSOP Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            NXH008T120M3F2PTHG | onsemi | 
                            
                                                         Description: MOSFET 4N-CH 1200V 129A 29PIMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 371W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 129A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9129pF @ 800V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 100A, 18V Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V Vgs(th) (Max) @ Id: 4.4V @ 60mA Supplier Device Package: 29-PIM (56.7x42.5)  | 
                        
                                                             на замовлення 58 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            NXH015P120M3F1PTG | onsemi | 
                            
                                                         Description: MOSFET 2N-CH 1200V 77APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 198W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4696pF @ 800V Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 18V Gate Charge (Qg) (Max) @ Vgs: 211nC @ 18V Vgs(th) (Max) @ Id: 4.4V @ 30mA  | 
                        
                                                             на замовлення 153 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            NXH008P120M3F1PG | onsemi | 
                            
                                                         Description: MOSFET 2N-CH 1200V 145APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 382W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 8334pF @ 800V Rds On (Max) @ Id, Vgs: 10.9mOhm @ 120A, 18V Gate Charge (Qg) (Max) @ Vgs: 419nC @ 18V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4.4V @ 60mA  | 
                        
                                                             на замовлення 56 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            NXH008P120M3F1PTG | onsemi | 
                            
                                                         Description: MOSFET 2N-CH 1200V 145APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 382W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 8334pF @ 800V Rds On (Max) @ Id, Vgs: 10.9mOhm @ 120A, 18V Gate Charge (Qg) (Max) @ Vgs: 419nC @ 18V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4.4V @ 60mA  | 
                        
                                                             на замовлення 28 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            7WB3125AMX1TCG | onsemi | 
                            
                                                         Description: IC BUS SWITCH 1 X 1:1 8ULLGAPackaging: Bulk Package / Case: 8-XFLGA Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 8-ULLGA (1.95x1)  | 
                        
                                                             на замовлення 6000 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            7WB3126AMX1TCG | onsemi | 
                            
                                                         Description: IC BUS SWITCH 1 X 1:1 8ULLGAPackaging: Bulk Package / Case: 8-XFLGA Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 8-ULLGA (1.95x1)  | 
                        
                                                             на замовлення 6000 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            7WB3126BMX1TCG | onsemi | 
                            
                                                         Description: IC BUS SWITCH 1 X 1:1 8ULLGAPackaging: Bulk Package / Case: 8-XFLGA Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 8-ULLGA (1.6x1)  | 
                        
                                                             на замовлення 6000 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            7WB3126CMX1TCG | onsemi | 
                            
                                                         Description: IC BUS SWITCH 1 X 1:1 8ULLGAPackaging: Bulk Package / Case: 8-XFLGA Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 8-ULLGA (1.45x1)  | 
                        
                                                             на замовлення 6000 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            7WB3125BMX1TCG | onsemi | 
                            
                                                         Description: IC BUS SWITCH 1 X 1:1 8ULLGAPackaging: Bulk Package / Case: 8-XFLGA Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 8-ULLGA (1.6x1)  | 
                        
                                                             на замовлення 3280 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            7WB3126MUTAG | onsemi | 
                            
                                                         Description: IC BUS SWITCH 1 X 1:1 8UDFNPackaging: Bulk Package / Case: 8-UFDFN Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 8-UDFN (1.8x1.2)  | 
                        
                                                             на замовлення 149501 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            7WB3125MUTAG | onsemi | 
                            
                                                         Description: IC BUS SWITCH 1 X 1:1 8UDFNPackaging: Bulk Package / Case: 8-UFDFN Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 8-UDFN (1.8x1.2)  | 
                        
                                                             на замовлення 95975 шт: термін постачання 21-31 дні (днів) | 
                        
                            
  | 
                    ||||||||||||||||||
                                                              | 
                            NC7WB3125K8X | onsemi | 
                            
                                                         Description: IC BUS SWITCH 1 X 1:1 US8Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: US8  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            NC7WB3125K8X | onsemi | 
                            
                                                         Description: IC BUS SWITCH 1 X 1:1 US8Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: US8  | 
                        
                                                             на замовлення 2 шт: термін постачання 21-31 дні (днів) | 
                        В кошику од. на суму грн. | ||||||||||||||||||
                                                              | 
                            FAN48617UC50X | onsemi | 
                            
                                                         Description: IC REG BOOST 5V 1A 9WLCSPPackaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 1A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Voltage - Input (Max): 4.5V Topology: Boost Supplier Device Package: 9-WLCSP (1.22x1.22) Synchronous Rectifier: Yes Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 5V  | 
                        
                                                             товару немає в наявності                                                      | 
                        В кошику од. на суму грн. | 
| NCP81382LMNTXG | 
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 437+ | 52.86 грн | 
| 1N5379B | 
![]()  | 
Виробник: onsemi
Description: DIODE ZENER 110V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 83.6 V
    Description: DIODE ZENER 110V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 83.6 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| NTBG080N120SC1 | 
![]()  | 
Виробник: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
    Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 800+ | 505.05 грн | 
| NTBG080N120SC1 | 
![]()  | 
Виробник: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
    Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
на замовлення 1035 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 825.78 грн | 
| 10+ | 548.86 грн | 
| 100+ | 497.57 грн | 
| NVBG080N120SC1 | 
![]()  | 
Виробник: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Qualification: AEC-Q101
    Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Qualification: AEC-Q101
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 800+ | 662.95 грн | 
| NVBG080N120SC1 | 
![]()  | 
Виробник: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Qualification: AEC-Q101
    Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Qualification: AEC-Q101
на замовлення 6170 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 1242.78 грн | 
| 10+ | 846.78 грн | 
| 100+ | 649.65 грн | 
| NVH4L080N120SC1 | 
![]()  | 
Виробник: onsemi
Description: SICFET N-CH 1200V 29A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Qualification: AEC-Q101
    Description: SICFET N-CH 1200V 29A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Qualification: AEC-Q101
на замовлення 51642 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 897.48 грн | 
| 30+ | 674.03 грн | 
| 74LVTH162245GX | 
![]()  | 
Виробник: onsemi
Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA; 32mA, 64mA
Supplier Device Package: 54-FBGA (5.5x8)
    Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA; 32mA, 64mA
Supplier Device Package: 54-FBGA (5.5x8)
товару немає в наявності
    В кошику
     од. на суму     грн.
| 74VCX164245G | 
![]()  | 
Виробник: onsemi
Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tray
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 54-FBGA (5.5x8)
    Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tray
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 54-FBGA (5.5x8)
товару немає в наявності
    В кошику
     од. на суму     грн.
| 74LVTH162245G | 
![]()  | 
Виробник: onsemi
Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA; 32mA, 64mA
Supplier Device Package: 54-FBGA (5.5x8)
    Description: IC TXRX NON-INVERT 3.6V 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA; 32mA, 64mA
Supplier Device Package: 54-FBGA (5.5x8)
товару немає в наявності
    В кошику
     од. на суму     грн.
| FSLV16211GX | 
![]()  | 
Виробник: onsemi
Description: IC BUS SWITCH 12 X 1:1 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Circuit: 12 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 54-FBGA (5.5x8)
    Description: IC BUS SWITCH 12 X 1:1 54FBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Circuit: 12 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 54-FBGA (5.5x8)
товару немає в наявності
    В кошику
     од. на суму     грн.
| NCP720BMT170TBG | 
![]()  | 
Виробник: onsemi
Description: IC REG LINEAR 1.7V 350MA 6-WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.7V
Control Features: Enable
PSRR: 65dB ~ 25dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 1.4V @ 350mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
    Description: IC REG LINEAR 1.7V 350MA 6-WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.7V
Control Features: Enable
PSRR: 65dB ~ 25dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 1.4V @ 350mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
товару немає в наявності
    В кошику
     од. на суму     грн.
| NCP720BMT170TBG | 
![]()  | 
Виробник: onsemi
Description: IC REG LINEAR 1.7V 350MA 6-WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.7V
Control Features: Enable
PSRR: 65dB ~ 25dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 1.4V @ 350mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
    Description: IC REG LINEAR 1.7V 350MA 6-WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.7V
Control Features: Enable
PSRR: 65dB ~ 25dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 1.4V @ 350mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1737+ | 13.36 грн | 
| NVMFS5C450NLAFT1G | 
![]()  | 
Виробник: onsemi
Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
    Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
    В кошику
     од. на суму     грн.
| NVMFS5C450NLAFT1G | 
![]()  | 
Виробник: onsemi
Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
    Description: MOSFET N-CH 40V 110A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
    В кошику
     од. на суму     грн.
| FQE10N20CTU | 
![]()  | 
Виробник: onsemi
Description: MOSFET N-CH 200V 4A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2A, 10V
Power Dissipation (Max): 12.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-126-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
    Description: MOSFET N-CH 200V 4A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2A, 10V
Power Dissipation (Max): 12.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-126-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| FCP125N65S3 | 
![]()  | 
Виробник: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
    Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
на замовлення 2265 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 342.84 грн | 
| 50+ | 244.84 грн | 
| 100+ | 239.63 грн | 
| 500+ | 128.84 грн | 
| 74VHC573MX | 
![]()  | 
Виробник: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOIC
    Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOIC
товару немає в наявності
    В кошику
     од. на суму     грн.
| 74VHC573MX | 
![]()  | 
Виробник: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOIC
    Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.5ns
Supplier Device Package: 20-SOIC
на замовлення 3 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| NXH030F120M3F1PTG | 
![]()  | 
Виробник: onsemi
Description: MOSFET 4N-CH 1200V 38A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: 22-PIM (33.8x42.5)
    Description: MOSFET 4N-CH 1200V 38A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: 22-PIM (33.8x42.5)
на замовлення 110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 5117.83 грн | 
| 28+ | 3814.66 грн | 
| NXH030P120M3F1PTG | 
![]()  | 
Виробник: onsemi
Description: MOSFET 2N-CH 1200V 42A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2271pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 15mA
    Description: MOSFET 2N-CH 1200V 42A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 100W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2271pF @ 800V
Rds On (Max) @ Id, Vgs: 38.5mOhm @ 30A, 18V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 15mA
на замовлення 28 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 4720.60 грн | 
| 28+ | 3458.27 грн | 
| MPSA06 | 
![]()  | 
Виробник: onsemi
Description: TRANS NPN 80V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
    Description: TRANS NPN 80V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
на замовлення 75233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 11+ | 31.32 грн | 
| 18+ | 18.57 грн | 
| 100+ | 11.74 грн | 
| 500+ | 8.23 грн | 
| 1000+ | 7.33 грн | 
| 2000+ | 6.57 грн | 
| 5000+ | 5.66 грн | 
| 10000+ | 5.16 грн | 
| 50000+ | 4.28 грн | 
| DTC115TET1G | 
![]()  | 
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
    Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
товару немає в наявності
    В кошику
     од. на суму     грн.
| DTC115TET1G | 
![]()  | 
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
    Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
товару немає в наявності
    В кошику
     од. на суму     грн.
| DTC115TM3T5G | 
![]()  | 
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
    Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
товару немає в наявності
    В кошику
     од. на суму     грн.
| DTC115TM3T5G | 
![]()  | 
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
    Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
товару немає в наявності
    В кошику
     од. на суму     грн.
| DTC115TM3T5G | 
![]()  | 
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
    Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 100 kOhms
на замовлення 152000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 8535+ | 3.14 грн | 
| KSB772OS | 
![]()  | 
Виробник: onsemi
Description: TRANS PNP 30V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
    Description: TRANS PNP 30V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
товару немає в наявності
    В кошику
     од. на суму     грн.
| FSB50450A | 
![]()  | 
Виробник: onsemi
Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
    Description: MOSFET IPM 500V 1.5A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| FSB50450AT | 
![]()  | 
Виробник: onsemi
Description: MODULE SPM 500V 1.5A 23PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
    Description: MODULE SPM 500V 1.5A 23PWRDIP
Packaging: Bulk
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
на замовлення 360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 64+ | 356.53 грн | 
| FSB50450AT | 
![]()  | 
Виробник: onsemi
Description: MODULE SPM 500V 1.5A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
    Description: MODULE SPM 500V 1.5A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| NRVSRD620VCTT4RG | 
![]()  | 
Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
    Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| NRVSRD620VCTT4RG | 
![]()  | 
Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
    Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 2327 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 5+ | 79.12 грн | 
| 10+ | 61.42 грн | 
| 100+ | 47.96 грн | 
| 500+ | 35.47 грн | 
| 1000+ | 32.33 грн | 
| NCV8501PDW50G | 
![]()  | 
Виробник: onsemi
Description: IC REG LINEAR 5V 150MA 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 16-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 19 mA
Qualification: AEC-Q100
    Description: IC REG LINEAR 5V 150MA 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 16-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 19 mA
Qualification: AEC-Q100
товару немає в наявності
    В кошику
     од. на суму     грн.
| NCV8800HDW50R2G | 
![]()  | 
Виробник: onsemi
Description: IC REG BUCK 5V 1A 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
    Description: IC REG BUCK 5V 1A 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.5V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
на замовлення 60716 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 151+ | 148.05 грн | 
| MC74HC02ADR2G-Q | 
![]()  | 
Виробник: onsemi
Description: QUAD 2-INPUT NOR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
    Description: QUAD 2-INPUT NOR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
товару немає в наявності
    В кошику
     од. на суму     грн.
| MC74HC02ADR2G-Q | 
![]()  | 
Виробник: onsemi
Description: QUAD 2-INPUT NOR GATE
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
    Description: QUAD 2-INPUT NOR GATE
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 2387 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 15+ | 22.25 грн | 
| 23+ | 14.36 грн | 
| 25+ | 12.70 грн | 
| 100+ | 10.26 грн | 
| 250+ | 9.46 грн | 
| 500+ | 8.98 грн | 
| 1000+ | 8.44 грн | 
| DM7414N | 
![]()  | 
Виробник: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14MDIP
Packaging: Tube
Features: Schmitt Trigger
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Inverter
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 800µA, 16mA
Number of Inputs: 1
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.6V
Max Propagation Delay @ V, Max CL: 22ns @ 5V, 15pF
Number of Circuits: 6
    Description: IC INVERT SCHMITT 6CH 1IN 14MDIP
Packaging: Tube
Features: Schmitt Trigger
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Inverter
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 800µA, 16mA
Number of Inputs: 1
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.6V
Max Propagation Delay @ V, Max CL: 22ns @ 5V, 15pF
Number of Circuits: 6
товару немає в наявності
    В кошику
     од. на суму     грн.
| FSB50660SF | 
![]()  | 
Виробник: onsemi
Description: MODULE SPM 600V 3.1A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 3.1 A
Voltage: 600 V
    Description: MODULE SPM 600V 3.1A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 3.1 A
Voltage: 600 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| FSB50660SF | 
![]()  | 
Виробник: onsemi
Description: MODULE SPM 600V 3.1A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 3.1 A
Voltage: 600 V
    Description: MODULE SPM 600V 3.1A 23PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 3.1 A
Voltage: 600 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| FDMS8570S | 
![]()  | 
Виробник: onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2825 pF @ 13 V
    Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2825 pF @ 13 V
на замовлення 81000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 544+ | 41.70 грн | 
| MC74VHC1G08DBVT1G | 
![]()  | 
Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
    Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 2.23 грн | 
| 6000+ | 2.07 грн | 
| 9000+ | 2.03 грн | 
| MC74VHC1G08DBVT1G | 
![]()  | 
Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
    Description: IC GATE AND 1CH 2-INP SC74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 12709 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 45+ | 7.42 грн | 
| 80+ | 3.97 грн | 
| 93+ | 3.43 грн | 
| 111+ | 2.70 грн | 
| 250+ | 2.45 грн | 
| 500+ | 2.30 грн | 
| 1000+ | 2.13 грн | 
| MC74VHC1G08DBVT1G-Q | 
![]()  | 
Виробник: onsemi
Description: SINGLE 2-INPUT AND GATE
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
    Description: SINGLE 2-INPUT AND GATE
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
на замовлення 147000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 4.36 грн | 
| 6000+ | 3.79 грн | 
| 9000+ | 3.59 грн | 
| 15000+ | 3.15 грн | 
| 21000+ | 3.03 грн | 
| 30000+ | 2.91 грн | 
| 75000+ | 2.61 грн | 
| MC74VHC1G08DBVT1G-Q | 
![]()  | 
Виробник: onsemi
Description: SINGLE 2-INPUT AND GATE
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
    Description: SINGLE 2-INPUT AND GATE
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-74A
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
на замовлення 148225 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 14+ | 24.72 грн | 
| 24+ | 13.25 грн | 
| 30+ | 10.70 грн | 
| 100+ | 7.37 грн | 
| 250+ | 6.10 грн | 
| 500+ | 5.34 грн | 
| 1000+ | 4.64 грн | 
| MC74VHC1G08DTT1H | 
![]()  | 
Виробник: onsemi
Description: IC GATE AND 1CH 2-INP 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-TSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
    Description: IC GATE AND 1CH 2-INP 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-TSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товару немає в наявності
    В кошику
     од. на суму     грн.
| NXH008T120M3F2PTHG | 
![]()  | 
Виробник: onsemi
Description: MOSFET 4N-CH 1200V 129A 29PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 371W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9129pF @ 800V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 29-PIM (56.7x42.5)
    Description: MOSFET 4N-CH 1200V 129A 29PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 371W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9129pF @ 800V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 29-PIM (56.7x42.5)
на замовлення 58 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 11917.71 грн | 
| 20+ | 11271.77 грн | 
| NXH015P120M3F1PTG | 
![]()  | 
Виробник: onsemi
Description: MOSFET 2N-CH 1200V 77A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 198W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4696pF @ 800V
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs: 211nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 30mA
    Description: MOSFET 2N-CH 1200V 77A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 198W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4696pF @ 800V
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs: 211nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 30mA
на замовлення 153 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 5343.65 грн | 
| 10+ | 4101.98 грн | 
| NXH008P120M3F1PG | 
![]()  | 
Виробник: onsemi
Description: MOSFET 2N-CH 1200V 145A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 382W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8334pF @ 800V
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 419nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
    Description: MOSFET 2N-CH 1200V 145A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 382W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8334pF @ 800V
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 419nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
на замовлення 56 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 6461.16 грн | 
| 10+ | 5928.46 грн | 
| NXH008P120M3F1PTG | 
![]()  | 
Виробник: onsemi
Description: MOSFET 2N-CH 1200V 145A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 382W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8334pF @ 800V
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 419nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
    Description: MOSFET 2N-CH 1200V 145A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 382W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8334pF @ 800V
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 419nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
на замовлення 28 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 8076.45 грн | 
| 10+ | 6285.35 грн | 
| 28+ | 5928.48 грн | 
| 7WB3125AMX1TCG | 
![]()  | 
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
    Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1567+ | 14.93 грн | 
| 7WB3126AMX1TCG | 
![]()  | 
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
    Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1567+ | 14.93 грн | 
| 7WB3126BMX1TCG | 
![]()  | 
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.6x1)
    Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.6x1)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1567+ | 14.93 грн | 
| 7WB3126CMX1TCG | 
![]()  | 
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.45x1)
    Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.45x1)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1567+ | 14.93 грн | 
| 7WB3125BMX1TCG | 
![]()  | 
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.6x1)
    Description: IC BUS SWITCH 1 X 1:1 8ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.6x1)
на замовлення 3280 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1567+ | 14.93 грн | 
| 7WB3126MUTAG | 
![]()  | 
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
    Description: IC BUS SWITCH 1 X 1:1 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
на замовлення 149501 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1199+ | 19.64 грн | 
| 7WB3125MUTAG | 
![]()  | 
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
    Description: IC BUS SWITCH 1 X 1:1 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
на замовлення 95975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1199+ | 19.64 грн | 
| NC7WB3125K8X | 
![]()  | 
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: US8
    Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: US8
товару немає в наявності
    В кошику
     од. на суму     грн.
| NC7WB3125K8X | 
![]()  | 
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: US8
    Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: US8
на замовлення 2 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| FAN48617UC50X | 
![]()  | 
Виробник: onsemi
Description: IC REG BOOST 5V 1A 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 4.5V
Topology: Boost
Supplier Device Package: 9-WLCSP (1.22x1.22)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 5V
    Description: IC REG BOOST 5V 1A 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 4.5V
Topology: Boost
Supplier Device Package: 9-WLCSP (1.22x1.22)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 5V
товару немає в наявності
    В кошику
     од. на суму     грн.



























