Фото | Назва | Виробник | Інформація |
Доступність |
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NTLJD2104PTAG | onsemi |
![]() Packaging: Bulk Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.4A Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 6-WDFN (2x2) |
на замовлення 16318 шт: термін постачання 21-31 дні (днів) |
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NTLJD2104PTBG | onsemi |
![]() Packaging: Bulk Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.4A Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 6-WDFN (2x2) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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ECH8652-TL-H | onsemi |
![]() Packaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 6V Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Supplier Device Package: 8-ECH |
на замовлення 6950 шт: термін постачання 21-31 дні (днів) |
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CPH3348-TL-W | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 1mA Supplier Device Package: 3-CPH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 6 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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MCH3374-TL-E | onsemi |
![]() Packaging: Bulk Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1W (Ta) Supplier Device Package: SC-70FL/MCPH3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 6 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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KA431SMF2TF | onsemi |
![]() Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: SOT-23F-3 Voltage - Output (Min/Fixed): 2.5V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
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ES3C | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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ES3C | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
на замовлення 13875 шт: термін постачання 21-31 дні (днів) |
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P6KE100AG | onsemi |
![]() Packaging: Bulk Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.4A (8/20µs) Voltage - Reverse Standoff (Typ): 85.5V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 95V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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MC100LVEL34DTG | onsemi |
![]() Packaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: ECL Frequency - Max: 1.5GHz Type: Clock Generator Input: LVDS, NECL, PECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.8V Ratio - Input:Output: 1:4 Differential - Input:Output: Yes/Yes Supplier Device Package: 16-TSSOP PLL: No Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 4767 шт: термін постачання 21-31 дні (днів) |
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TL331SN4T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: CMOS, DTL, ECL, Open-Collector, TTL Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 5-TSOP Propagation Delay (Max): 700ns (Typ) Current - Quiescent (Max): 1.25mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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TL331SN4T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: CMOS, DTL, ECL, Open-Collector, TTL Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 5-TSOP Propagation Delay (Max): 700ns (Typ) Current - Quiescent (Max): 1.25mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V |
на замовлення 14589 шт: термін постачання 21-31 дні (днів) |
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NLV14099BDWR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Standard Mounting Type: Surface Mount Circuit: 4:4 Logic Type: D-Type, Addressable Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 1 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 50ns Supplier Device Package: 16-SOIC Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTQS6463R2 | onsemi |
![]() Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6.8A, 4.5V Power Dissipation (Max): 930mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-TSSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V |
на замовлення 5050 шт: термін постачання 21-31 дні (днів) |
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FDC6392S | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 960mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDC6392S | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 960mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SZMM5Z13VT5G | onsemi |
![]() Tolerance: ±6.42% Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 13.25 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-523 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SZMM5Z13VT5G | onsemi |
![]() Tolerance: ±6.42% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 13.25 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-523 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V Qualification: AEC-Q101 |
на замовлення 7990 шт: термін постачання 21-31 дні (днів) |
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TIP30C | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TIP30C | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
на замовлення 13751 шт: термін постачання 21-31 дні (днів) |
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SA5534AD | onsemi |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 4mA Slew Rate: 13V/µs Gain Bandwidth Product: 10 MHz Current - Input Bias: 500 nA Voltage - Input Offset: 500 µV Supplier Device Package: 8-SOIC Number of Circuits: 1 Current - Output / Channel: 38 mA Voltage - Supply Span (Min): 6 V Voltage - Supply Span (Max): 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AFGHL40T120RW-STD | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40.1ns/152ns Switching Energy: 3.27mJ (on), 1.27mJ (off) Test Condition: 600V, 40A, 4.7Ohm, 15V Gate Charge: 113 nC Grade: Automotive Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 468 W Qualification: AEC-Q101 |
на замовлення 1340 шт: термін постачання 21-31 дні (днів) |
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AFGH4L40T120RW-STD | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40.2ns/164ns Switching Energy: 1.56mJ (on), 1.22mJ (off) Test Condition: 600V, 40A, 6Ohm, 15V Gate Charge: 113 nC Grade: Automotive Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 416 W Qualification: AEC-Q101 |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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AFGHL40T120RW | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 55.2ns/241ns Switching Energy: 3.68mJ (on), 1.7mJ (off) Test Condition: 600V, 40A, 4.7Ohm, 15V Gate Charge: 171 nC Grade: Automotive Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 652 W Qualification: AEC-Q101 |
на замовлення 1237 шт: термін постачання 21-31 дні (днів) |
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AFGHL40T120RWD-STD | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 194 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40.1ns/152ns Switching Energy: 3.27mJ (on), 1.27mJ (off) Test Condition: 600V, 40A, 4.7Ohm, 15V Gate Charge: 112 nC Grade: Automotive Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 468 W Qualification: AEC-Q101 |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
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AFGH4L40T120RW | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.73V @ 15V, 40A Supplier Device Package: TO-247-4L IGBT Type: Field Stop Td (on/off) @ 25°C: 58.2ns/258ns Switching Energy: 3.38mJ (on), 1.7mJ (off) Test Condition: 600V, 40A, 6Ohm, 15V Gate Charge: 171 nC Grade: Automotive Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 576 W Qualification: AEC-Q101 |
на замовлення 895 шт: термін постачання 21-31 дні (днів) |
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AFGH4L40T120RWD-STD | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 192 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40.2ns/164ns Switching Energy: 1.56mJ (on), 1.22mJ (off) Test Condition: 600V, 40A, 6Ohm, 15V Gate Charge: 112 nC Grade: Automotive Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 416 W Qualification: AEC-Q101 |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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AFGHL40T120RWD | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 185 ns Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 55.2ns/241ns Switching Energy: 3.68mJ (on), 1.7mJ (off) Test Condition: 600V, 40A, 4.7Ohm, 15V Gate Charge: 170 nC Grade: Automotive Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 652 W Qualification: AEC-Q101 |
на замовлення 772 шт: термін постачання 21-31 дні (днів) |
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AFGH4L40T120RWD | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 182 ns Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53.5ns/311ns Switching Energy: 3.38mJ (on), 1.7mJ (off) Test Condition: 600V, 20A, 6Ohm, 15V Gate Charge: 171 nC Grade: Automotive Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 576 W Qualification: AEC-Q101 |
на замовлення 3086 шт: термін постачання 21-31 дні (днів) |
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FGY4L140T120SWD | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 266.9 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 140A Supplier Device Package: TO-247-4L IGBT Type: Field Stop Td (on/off) @ 25°C: 60.8ns/232ns Switching Energy: 3.9mJ (on), 4.6mJ (off) Test Condition: 600V, 140A, 4.7Ohm, 15V Gate Charge: 426 nC Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 560 A Power - Max: 1250 W |
на замовлення 123 шт: термін постачання 21-31 дні (днів) |
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DCD010-TB-E | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: 3-CP Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 15 V |
на замовлення 222000 шт: термін постачання 21-31 дні (днів) |
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NTB18N06T4 | onsemi |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V Power Dissipation (Max): 48.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
на замовлення 8800 шт: термін постачання 21-31 дні (днів) |
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NTB18N06G | onsemi |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V Power Dissipation (Max): 48.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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NOIP3SN1300A-QTI | onsemi |
![]() Packaging: Tray Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.3V Pixel Size: 4.8µm x 4.8µm Active Pixel Array: 1280H x 1024V Frames per Second: 50.0 |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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74VHC245MX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74VHC245MX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74VHC245N | onsemi |
![]() Packaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Output Type: 3-State Mounting Type: Through Hole Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-PDIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N5551G | onsemi |
![]() ![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
на замовлення 199014 шт: термін постачання 21-31 дні (днів) |
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NCP189CMTW330TAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 500mA Operating Temperature: 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 55 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WDFNW (2x2) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Power Good, Soft Start Grade: Automotive Voltage Dropout (Max): 0.065V @ 500mA Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NCP189CMTW330TAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 500mA Operating Temperature: 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 55 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WDFNW (2x2) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Power Good, Soft Start Grade: Automotive Voltage Dropout (Max): 0.065V @ 500mA Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
на замовлення 13385 шт: термін постачання 21-31 дні (днів) |
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NCV8189CMTW330TAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 500mA Operating Temperature: 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 55 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WDFNW (2x2) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Power Good, Soft Start Grade: Automotive PSRR: 85dB ~ 40dB (1kHz ~ 1MHz) Voltage Dropout (Max): 0.129V @ 500mA Protection Features: Over Current, Over Temperature, Short Circuit Qualification: AEC-Q100 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NCV8189CMTW330TAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 500mA Operating Temperature: 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 55 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WDFNW (2x2) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Power Good, Soft Start Grade: Automotive PSRR: 85dB ~ 40dB (1kHz ~ 1MHz) Voltage Dropout (Max): 0.129V @ 500mA Protection Features: Over Current, Over Temperature, Short Circuit Qualification: AEC-Q100 |
на замовлення 11975 шт: термін постачання 21-31 дні (днів) |
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STK621-033A-E | onsemi |
![]() Packaging: Tube |
на замовлення 2191 шт: термін постачання 21-31 дні (днів) |
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STK621-033A-E | onsemi |
![]() Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
2SJ653-CB11-ON | onsemi |
![]() Packaging: Bulk |
на замовлення 6150 шт: термін постачання 21-31 дні (днів) |
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1N4002RL | onsemi |
![]() Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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LV5980MDZ-AH | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-SOP (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 80°C (TA) Output Configuration: Positive Frequency - Switching: 370kHz Voltage - Input (Max): 23V Topology: Buck Supplier Device Package: 10-SOIC Synchronous Rectifier: No Voltage - Output (Max): 21.62V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 1.235V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KSC1008GBU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KSC1008OTA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BDW93 | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PCRU3060W | onsemi |
Description: IGBT Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX85C47 | onsemi |
![]() Tolerance: ±6% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 33 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC556 | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KSD560RTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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OPB865T51 | onsemi |
![]() Package / Case: Module, PC Pins, Slot Type Mounting Type: Through Hole |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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OPB865T55 | onsemi |
![]() Package / Case: Module, PC Pins, Slot Type Mounting Type: Through Hole |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AFGH4L25T120RW | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Supplier Device Package: TO-247-4L IGBT Type: Field Stop Gate Charge: 113 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 416 W Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 25A Td (on/off) @ 25°C: 43ns/203ns Switching Energy: 1.46mJ (on), 1.07mJ (off) Test Condition: 600V, 25A, 8Ohm, 15V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3598 шт: термін постачання 21-31 дні (днів) |
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AFGH4L25T120RWD | onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Reverse Recovery Time (trr): 174 ns Supplier Device Package: TO-247-4L IGBT Type: Field Stop Gate Charge: 113 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 357 W Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.71V @ 15V, 25A Td (on/off) @ 25°C: 43ns/203ns Switching Energy: 1.46mJ (on), 1.07mJ (off) Test Condition: 600V, 25A, 8Ohm, 15V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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SZ2408RL | onsemi |
Description: IC REG LINEAR 1.5W SPCL SUR30 Packaging: Bulk |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NTBL075N065SC1 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tj) Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V Power Dissipation (Max): 139W (Tj) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V |
товару немає в наявності |
В кошику од. на суму грн. |
NTLJD2104PTAG |
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Виробник: onsemi
Description: MOSFET 2P-CH 12V 2.4A 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Description: MOSFET 2P-CH 12V 2.4A 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
на замовлення 16318 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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1158+ | 19.70 грн |
NTLJD2104PTBG |
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Виробник: onsemi
Description: MOSFET 2P-CH 12V 2.4A 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Description: MOSFET 2P-CH 12V 2.4A 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1158+ | 19.70 грн |
ECH8652-TL-H |
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Виробник: onsemi
Description: MOSFET 2P-CH 12V 6A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Description: MOSFET 2P-CH 12V 6A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
на замовлення 6950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1025+ | 21.98 грн |
CPH3348-TL-W |
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Виробник: onsemi
Description: MOSFET P-CH 12V 3A 3CPH
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 6 V
Description: MOSFET P-CH 12V 3A 3CPH
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 6 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2082+ | 10.61 грн |
MCH3374-TL-E |
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Виробник: onsemi
Description: MOSFET P-CH 12V 3A SC70FL/MCPH3
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: SC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 6 V
Description: MOSFET P-CH 12V 3A SC70FL/MCPH3
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: SC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 6 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1600+ | 14.40 грн |
KA431SMF2TF |
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Виробник: onsemi
Description: IC VREF SHUNT 36V 2% SOT23F-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT 36V 2% SOT23F-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.20 грн |
15+ | 21.61 грн |
25+ | 17.75 грн |
100+ | 12.50 грн |
250+ | 10.45 грн |
500+ | 9.20 грн |
1000+ | 8.01 грн |
ES3C |
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Виробник: onsemi
Description: DIODE STANDARD 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE STANDARD 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 15.85 грн |
6000+ | 15.11 грн |
9000+ | 14.50 грн |
ES3C |
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Виробник: onsemi
Description: DIODE STANDARD 150V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE STANDARD 150V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
на замовлення 13875 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 45.36 грн |
11+ | 29.73 грн |
100+ | 26.00 грн |
500+ | 19.37 грн |
1000+ | 17.59 грн |
P6KE100AG |
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Виробник: onsemi
Description: TVS DIODE 85.5VWM 137VC AXIAL
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 85.5VWM 137VC AXIAL
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A (8/20µs)
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2664+ | 8.07 грн |
MC100LVEL34DTG |
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Виробник: onsemi
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 1.5GHz
Type: Clock Generator
Input: LVDS, NECL, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.8V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TSSOP
PLL: No
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 1.5GHz
Type: Clock Generator
Input: LVDS, NECL, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.8V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TSSOP
PLL: No
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 4767 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
40+ | 575.69 грн |
TL331SN4T1G |
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Виробник: onsemi
Description: LOW POWER SINGLE COMPARATOR
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: CMOS, DTL, ECL, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 700ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Description: LOW POWER SINGLE COMPARATOR
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: CMOS, DTL, ECL, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 700ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 9.37 грн |
6000+ | 8.42 грн |
TL331SN4T1G |
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Виробник: onsemi
Description: LOW POWER SINGLE COMPARATOR
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: CMOS, DTL, ECL, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 700ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Description: LOW POWER SINGLE COMPARATOR
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: CMOS, DTL, ECL, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 700ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
на замовлення 14589 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 54.91 грн |
10+ | 31.57 грн |
25+ | 26.06 грн |
100+ | 18.60 грн |
250+ | 15.72 грн |
500+ | 13.95 грн |
1000+ | 12.26 грн |
NLV14099BDWR2G |
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Виробник: onsemi
Description: IC LATCH 8BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 4:4
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 50ns
Supplier Device Package: 16-SOIC
Grade: Automotive
Qualification: AEC-Q100
Description: IC LATCH 8BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 4:4
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 50ns
Supplier Device Package: 16-SOIC
Grade: Automotive
Qualification: AEC-Q100
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NTQS6463R2 |
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Виробник: onsemi
Description: MOSFET P-CH 20V 6.8A 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 930mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Description: MOSFET P-CH 20V 6.8A 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 930mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
на замовлення 5050 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
701+ | 31.91 грн |
FDC6392S |
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Виробник: onsemi
Description: MOSFET P-CH 20V 2.2A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V
Description: MOSFET P-CH 20V 2.2A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V
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FDC6392S |
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Виробник: onsemi
Description: MOSFET P-CH 20V 2.2A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V
Description: MOSFET P-CH 20V 2.2A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V
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од. на суму грн.
SZMM5Z13VT5G |
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Виробник: onsemi
Description: DIODE ZENER SOD523
Tolerance: ±6.42%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Description: DIODE ZENER SOD523
Tolerance: ±6.42%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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SZMM5Z13VT5G |
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Виробник: onsemi
Description: DIODE ZENER SOD523
Tolerance: ±6.42%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Description: DIODE ZENER SOD523
Tolerance: ±6.42%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 31.04 грн |
15+ | 21.46 грн |
100+ | 10.82 грн |
500+ | 9.00 грн |
1000+ | 7.00 грн |
2000+ | 6.27 грн |
TIP30C |
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Виробник: onsemi
Description: TRANS PNP 100V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP 100V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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TIP30C |
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Виробник: onsemi
Description: TRANS PNP 100V 1A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP 100V 1A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
на замовлення 13751 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1665+ | 13.74 грн |
SA5534AD |
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Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4mA
Slew Rate: 13V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 500 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SOIC
Number of Circuits: 1
Current - Output / Channel: 38 mA
Voltage - Supply Span (Min): 6 V
Voltage - Supply Span (Max): 40 V
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 4mA
Slew Rate: 13V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 500 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SOIC
Number of Circuits: 1
Current - Output / Channel: 38 mA
Voltage - Supply Span (Min): 6 V
Voltage - Supply Span (Max): 40 V
товару немає в наявності
В кошику
од. на суму грн.
AFGHL40T120RW-STD |
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Виробник: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40.1ns/152ns
Switching Energy: 3.27mJ (on), 1.27mJ (off)
Test Condition: 600V, 40A, 4.7Ohm, 15V
Gate Charge: 113 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 468 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40.1ns/152ns
Switching Energy: 3.27mJ (on), 1.27mJ (off)
Test Condition: 600V, 40A, 4.7Ohm, 15V
Gate Charge: 113 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 468 W
Qualification: AEC-Q101
на замовлення 1340 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 581.74 грн |
10+ | 381.63 грн |
450+ | 243.00 грн |
AFGH4L40T120RW-STD |
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Виробник: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40.2ns/164ns
Switching Energy: 1.56mJ (on), 1.22mJ (off)
Test Condition: 600V, 40A, 6Ohm, 15V
Gate Charge: 113 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 416 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40.2ns/164ns
Switching Energy: 1.56mJ (on), 1.22mJ (off)
Test Condition: 600V, 40A, 6Ohm, 15V
Gate Charge: 113 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 416 W
Qualification: AEC-Q101
на замовлення 450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 607.20 грн |
10+ | 399.34 грн |
450+ | 257.25 грн |
AFGHL40T120RW |
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Виробник: onsemi
Description: IGBT FIELD STOP 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 55.2ns/241ns
Switching Energy: 3.68mJ (on), 1.7mJ (off)
Test Condition: 600V, 40A, 4.7Ohm, 15V
Gate Charge: 171 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 652 W
Qualification: AEC-Q101
Description: IGBT FIELD STOP 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 55.2ns/241ns
Switching Energy: 3.68mJ (on), 1.7mJ (off)
Test Condition: 600V, 40A, 4.7Ohm, 15V
Gate Charge: 171 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 652 W
Qualification: AEC-Q101
на замовлення 1237 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 646.20 грн |
10+ | 426.62 грн |
450+ | 279.41 грн |
AFGHL40T120RWD-STD |
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Виробник: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 194 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40.1ns/152ns
Switching Energy: 3.27mJ (on), 1.27mJ (off)
Test Condition: 600V, 40A, 4.7Ohm, 15V
Gate Charge: 112 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 468 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 194 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40.1ns/152ns
Switching Energy: 3.27mJ (on), 1.27mJ (off)
Test Condition: 600V, 40A, 4.7Ohm, 15V
Gate Charge: 112 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 468 W
Qualification: AEC-Q101
на замовлення 360 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 659.73 грн |
10+ | 435.89 грн |
AFGH4L40T120RW |
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Виробник: onsemi
Description: IGBT FS 1200V 80A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.73V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 58.2ns/258ns
Switching Energy: 3.38mJ (on), 1.7mJ (off)
Test Condition: 600V, 40A, 6Ohm, 15V
Gate Charge: 171 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 576 W
Qualification: AEC-Q101
Description: IGBT FS 1200V 80A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.73V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 58.2ns/258ns
Switching Energy: 3.38mJ (on), 1.7mJ (off)
Test Condition: 600V, 40A, 6Ohm, 15V
Gate Charge: 171 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 576 W
Qualification: AEC-Q101
на замовлення 895 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 671.66 грн |
10+ | 443.94 грн |
450+ | 293.65 грн |
AFGH4L40T120RWD-STD |
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Виробник: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 192 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40.2ns/164ns
Switching Energy: 1.56mJ (on), 1.22mJ (off)
Test Condition: 600V, 40A, 6Ohm, 15V
Gate Charge: 112 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 416 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 192 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40.2ns/164ns
Switching Energy: 1.56mJ (on), 1.22mJ (off)
Test Condition: 600V, 40A, 6Ohm, 15V
Gate Charge: 112 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 416 W
Qualification: AEC-Q101
на замовлення 450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 547.52 грн |
10+ | 362.55 грн |
450+ | 301.27 грн |
AFGHL40T120RWD |
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Виробник: onsemi
Description: IGBT FIELD STOP 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 185 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 55.2ns/241ns
Switching Energy: 3.68mJ (on), 1.7mJ (off)
Test Condition: 600V, 40A, 4.7Ohm, 15V
Gate Charge: 170 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 652 W
Qualification: AEC-Q101
Description: IGBT FIELD STOP 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 185 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 55.2ns/241ns
Switching Energy: 3.68mJ (on), 1.7mJ (off)
Test Condition: 600V, 40A, 4.7Ohm, 15V
Gate Charge: 170 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 652 W
Qualification: AEC-Q101
на замовлення 772 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 762.39 грн |
10+ | 507.85 грн |
450+ | 347.06 грн |
AFGH4L40T120RWD |
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Виробник: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 182 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53.5ns/311ns
Switching Energy: 3.38mJ (on), 1.7mJ (off)
Test Condition: 600V, 20A, 6Ohm, 15V
Gate Charge: 171 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 576 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 182 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53.5ns/311ns
Switching Energy: 3.38mJ (on), 1.7mJ (off)
Test Condition: 600V, 20A, 6Ohm, 15V
Gate Charge: 171 nC
Grade: Automotive
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 576 W
Qualification: AEC-Q101
на замовлення 3086 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 786.26 грн |
10+ | 524.56 грн |
450+ | 361.30 грн |
FGY4L140T120SWD |
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Виробник: onsemi
Description: IGBT FS 1200V 200A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 266.9 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 140A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 60.8ns/232ns
Switching Energy: 3.9mJ (on), 4.6mJ (off)
Test Condition: 600V, 140A, 4.7Ohm, 15V
Gate Charge: 426 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 1250 W
Description: IGBT FS 1200V 200A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 266.9 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 140A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 60.8ns/232ns
Switching Energy: 3.9mJ (on), 4.6mJ (off)
Test Condition: 600V, 140A, 4.7Ohm, 15V
Gate Charge: 426 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 1250 W
на замовлення 123 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 810.93 грн |
30+ | 502.92 грн |
DCD010-TB-E |
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Виробник: onsemi
Description: DIODE ARRAY GP 20V 100MA 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Description: DIODE ARRAY GP 20V 100MA 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
на замовлення 222000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5323+ | 4.45 грн |
NTB18N06T4 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 15A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V
Power Dissipation (Max): 48.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Description: MOSFET N-CH 60V 15A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V
Power Dissipation (Max): 48.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 8800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1211+ | 18.94 грн |
NTB18N06G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V
Power Dissipation (Max): 48.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Description: MOSFET N-CH 60V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V
Power Dissipation (Max): 48.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
592+ | 38.65 грн |
NOIP3SN1300A-QTI |
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Виробник: onsemi
Description: IC IMAGE SENSOR CMOS 48LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Frames per Second: 50.0
Description: IC IMAGE SENSOR CMOS 48LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Frames per Second: 50.0
на замовлення 45 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 8254.14 грн |
10+ | 6623.59 грн |
25+ | 6402.73 грн |
74VHC245MX |
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Виробник: onsemi
Description: IC TXRX NON-INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOIC
Description: IC TXRX NON-INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOIC
товару немає в наявності
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74VHC245MX |
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Виробник: onsemi
Description: IC TXRX NON-INVERT 5.5V 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOIC
Description: IC TXRX NON-INVERT 5.5V 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOIC
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74VHC245N |
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Виробник: onsemi
Description: IC TXRX NON-INVERT 5.5V 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-PDIP
Description: IC TXRX NON-INVERT 5.5V 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-PDIP
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2N5551G | ![]() |
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Виробник: onsemi
Description: TRANS NPN 160V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Description: TRANS NPN 160V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
на замовлення 199014 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3122+ | 7.00 грн |
NCP189CMTW330TAG |
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Виробник: onsemi
Description: LDO, 500MA, LOW NOISE, HIGH ACCU
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
Voltage Dropout (Max): 0.065V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: LDO, 500MA, LOW NOISE, HIGH ACCU
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
Voltage Dropout (Max): 0.065V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 22.33 грн |
6000+ | 19.81 грн |
9000+ | 18.95 грн |
NCP189CMTW330TAG |
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Виробник: onsemi
Description: LDO, 500MA, LOW NOISE, HIGH ACCU
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
Voltage Dropout (Max): 0.065V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: LDO, 500MA, LOW NOISE, HIGH ACCU
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
Voltage Dropout (Max): 0.065V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 13385 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 95.50 грн |
10+ | 55.87 грн |
25+ | 46.53 грн |
100+ | 33.74 грн |
250+ | 28.87 грн |
500+ | 25.87 грн |
1000+ | 22.98 грн |
NCV8189CMTW330TAG |
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Виробник: onsemi
Description: LDO, 0.5A, LOW NOISE, FIXED AND
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 85dB ~ 40dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.129V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: LDO, 0.5A, LOW NOISE, FIXED AND
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 85dB ~ 40dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.129V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 23.71 грн |
6000+ | 21.06 грн |
9000+ | 20.16 грн |
NCV8189CMTW330TAG |
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Виробник: onsemi
Description: LDO, 0.5A, LOW NOISE, FIXED AND
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 85dB ~ 40dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.129V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: LDO, 0.5A, LOW NOISE, FIXED AND
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 500mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 85dB ~ 40dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.129V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 11975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 100.27 грн |
10+ | 58.85 грн |
25+ | 49.05 грн |
100+ | 35.64 грн |
250+ | 30.53 грн |
500+ | 27.39 грн |
1000+ | 24.35 грн |
STK621-033A-E |
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на замовлення 2191 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 956.56 грн |
2SJ653-CB11-ON |
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на замовлення 6150 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
173+ | 129.12 грн |
1N4002RL |
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Виробник: onsemi
Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9458+ | 2.10 грн |
LV5980MDZ-AH |
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Виробник: onsemi
Description: IC REG BUCK ADJ 3A 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 23V
Topology: Buck
Supplier Device Package: 10-SOIC
Synchronous Rectifier: No
Voltage - Output (Max): 21.62V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.235V
Description: IC REG BUCK ADJ 3A 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 80°C (TA)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 23V
Topology: Buck
Supplier Device Package: 10-SOIC
Synchronous Rectifier: No
Voltage - Output (Max): 21.62V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.235V
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KSC1008GBU |
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Виробник: onsemi
Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
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KSC1008OTA |
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Виробник: onsemi
Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
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BDW93 |
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Виробник: onsemi
Description: TRANS NPN DARL 45V 12A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 80 W
Description: TRANS NPN DARL 45V 12A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 80 W
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BZX85C47 |
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Виробник: onsemi
Description: DIODE ZENER 47V 1W DO204AL
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 33 V
Description: DIODE ZENER 47V 1W DO204AL
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 33 V
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BC556 |
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Виробник: onsemi
Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
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KSD560RTU |
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Виробник: onsemi
Description: TRANS NPN DARL 100V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Description: TRANS NPN DARL 100V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
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OPB865T51 |
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Виробник: onsemi
Description: SENSOR OPT PC PINS SLOT TYPE
Package / Case: Module, PC Pins, Slot Type
Mounting Type: Through Hole
Description: SENSOR OPT PC PINS SLOT TYPE
Package / Case: Module, PC Pins, Slot Type
Mounting Type: Through Hole
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OPB865T55 |
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Виробник: onsemi
Description: SENSOR OPT PC PINS SLOT TYPE
Package / Case: Module, PC Pins, Slot Type
Mounting Type: Through Hole
Description: SENSOR OPT PC PINS SLOT TYPE
Package / Case: Module, PC Pins, Slot Type
Mounting Type: Through Hole
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AFGH4L25T120RW |
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Виробник: onsemi
Description: IGBT FS 1200V 50A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Gate Charge: 113 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 416 W
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 25A
Td (on/off) @ 25°C: 43ns/203ns
Switching Energy: 1.46mJ (on), 1.07mJ (off)
Test Condition: 600V, 25A, 8Ohm, 15V
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT FS 1200V 50A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Gate Charge: 113 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 416 W
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 25A
Td (on/off) @ 25°C: 43ns/203ns
Switching Energy: 1.46mJ (on), 1.07mJ (off)
Test Condition: 600V, 25A, 8Ohm, 15V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3598 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 576.96 грн |
10+ | 378.65 грн |
450+ | 240.63 грн |
AFGH4L25T120RWD |
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Виробник: onsemi
Description: IGBT FS 1200V 50A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Reverse Recovery Time (trr): 174 ns
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Gate Charge: 113 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 357 W
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.71V @ 15V, 25A
Td (on/off) @ 25°C: 43ns/203ns
Switching Energy: 1.46mJ (on), 1.07mJ (off)
Test Condition: 600V, 25A, 8Ohm, 15V
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT FS 1200V 50A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Reverse Recovery Time (trr): 174 ns
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Gate Charge: 113 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 357 W
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.71V @ 15V, 25A
Td (on/off) @ 25°C: 43ns/203ns
Switching Energy: 1.46mJ (on), 1.07mJ (off)
Test Condition: 600V, 25A, 8Ohm, 15V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 529.21 грн |
10+ | 349.37 грн |
450+ | 287.70 грн |
SZ2408RL |
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3806+ | 5.94 грн |
NTBL075N065SC1 |
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Виробник: onsemi
Description: M2 650V SIC MOSFET 75MOHM WITH T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tj)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 139W (Tj)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V
Description: M2 650V SIC MOSFET 75MOHM WITH T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tj)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 139W (Tj)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V
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В кошику
од. на суму грн.