| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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BCP5316MTWG | onsemi |
Description: TRANS PNP 80V 1A 3WDFNWPackaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW |
на замовлення 2961 шт: термін постачання 21-31 дні (днів) |
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NVD5890NT4G-VF01 | onsemi |
Description: POWER MOSFET 40V, 123A, 3.7 MOHMQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 4W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
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В кошику од. на суму грн. | ||||||||||||||||||
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NVD5805NT4G-VF01 | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Grade: Automotive Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SVD5867NLT4G-UM | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 60Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.3W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FDU5N50NZTU | onsemi |
Description: MOSFET N-CH 500V 4A DPAK3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK3 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
на замовлення 13509 шт: термін постачання 21-31 дні (днів) |
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NRVBA320NT3G | onsemi |
Description: DIODE SCHOTTKY 20V 3A SMAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 20 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: SMA Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NRVBA320NT3G | onsemi |
Description: DIODE SCHOTTKY 20V 3A SMAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 20 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: SMA Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMFS5C404NLWFET3G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVBG023N065M3S | onsemi |
Description: SIC MOS D2PAK-7L 23MOHM 650V M3SPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NVBG023N065M3S | onsemi |
Description: SIC MOS D2PAK-7L 23MOHM 650V M3SPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 1590 шт: термін постачання 21-31 дні (днів) |
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NXH010P90MNF1PTG | onsemi |
Description: MOSFET 2N-CH 900V 154APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 328W (Tj) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V Vgs(th) (Max) @ Id: 4.3V @ 40mA |
на замовлення 140 шт: термін постачання 21-31 дні (днів) |
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NXH010P120MNF1PTG | onsemi |
Description: MOSFET 2N-CH 1200V 114APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 250W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V Vgs(th) (Max) @ Id: 4.3V @ 40mA |
на замовлення 196 шт: термін постачання 21-31 дні (днів) |
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TN6714A | onsemi |
Description: TRANS NPN 30V 2A TO226-3Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: TO-226-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMJS1D7N04CTWG | onsemi |
Description: MOSFET N-CH 40V 35A/185A 8LFPAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 3.5V @ 130µA Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NVMJS1D7N04CTWG | onsemi |
Description: MOSFET N-CH 40V 35A/185A 8LFPAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 3.5V @ 130µA Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) |
на замовлення 2913 шт: термін постачання 21-31 дні (днів) |
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FQA13N50C | onsemi |
Description: MOSFET N-CH 500V 13.5A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V Power Dissipation (Max): 218W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MB6S | onsemi |
Description: BRIDGE RECT 1P 600V 500MA 4-SOICPackaging: Tape & Reel (TR) Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SOIC Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 2501592 шт: термін постачання 21-31 дні (днів) |
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MB6S | onsemi |
Description: BRIDGE RECT 1P 600V 500MA 4-SOICPackaging: Cut Tape (CT) Package / Case: TO-269AA, 4-BESOP Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-SOIC Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 2501939 шт: термін постачання 21-31 дні (днів) |
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NLV74LCX00DTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPQualification: AEC-Q100 Current - Quiescent (Max): 10 µA Number of Circuits: 4 Grade: Automotive Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.7V ~ 2V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 2V ~ 3.6V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NLV74LCX00DTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPQualification: AEC-Q100 Current - Quiescent (Max): 10 µA Number of Circuits: 4 Grade: Automotive Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.7V ~ 2V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 2V ~ 3.6V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 2050 шт: термін постачання 21-31 дні (днів) |
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74LCX00SJX | onsemi |
Description: IC GATE NAND 4CH 2-INP 14SOPCurrent - Quiescent (Max): 10 µA Number of Circuits: 4 Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.7V ~ 2V Supplier Device Package: 14-SOP Number of Inputs: 2 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74LCX00SJX | onsemi |
Description: IC GATE NAND 4CH 2-INP 14SOPCurrent - Quiescent (Max): 10 µA Number of Circuits: 4 Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.7V ~ 2V Supplier Device Package: 14-SOP Number of Inputs: 2 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-SOIC (0.209", 5.30mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC32ADR2G-Q | onsemi |
Description: QUAD OR GATECurrent - Quiescent (Max): 1 µA Number of Circuits: 4 Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Input Logic Level - Low: 0.5V ~ 1.8V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: 14-SOIC Number of Inputs: 2 Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2V ~ 6V Operating Temperature: -55°C ~ 125°C Logic Type: OR Gate Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FAN1616AD25X | onsemi |
Description: IC REG LINEAR 2.5V 500MA TO252AAProtection Features: Over Current, Over Temperature Voltage Dropout (Max): 1.2V @ 500mA PSRR: 72dB (120Hz) Voltage - Output (Min/Fixed): 2.5V Supplier Device Package: TO-252AA Number of Regulators: 1 Voltage - Input (Max): 18V Output Configuration: Positive Operating Temperature: -40°C ~ 125°C Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NLX1G10BMX1TCG | onsemi |
Description: IC GATE NAND 1CH 3-INP 6ULLGACurrent - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Supplier Device Package: 6-ULLGA (1.2x1) Number of Inputs: 3 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 6-XFLGA Packaging: Bulk |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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NC7SVL04L6X | onsemi |
Description: IC INVERTER 1CH 1-INP 6MICROPAKPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 6-MicroPak Input Logic Level - High: 0.9V ~ 1.5V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 900 nA |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NC7SVL04L6X | onsemi |
Description: IC INVERTER 1CH 1-INP 6MICROPAKPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 6-MicroPak Input Logic Level - High: 0.9V ~ 1.5V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 900 nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSM3005NZTAG | onsemi |
Description: TRANS PNP 30V 500MA 6UDFNPackaging: Tape & Reel (TR) Voltage - Rated: 30V PNP, 20V N-Channel Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP, N-Channel Applications: General Purpose Supplier Device Package: 6-UDFN (1.6x1.6) |
на замовлення 276000 шт: термін постачання 21-31 дні (днів) |
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NSM3005NZTAG | onsemi |
Description: TRANS PNP 30V 500MA 6UDFNPackaging: Cut Tape (CT) Voltage - Rated: 30V PNP, 20V N-Channel Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP, N-Channel Applications: General Purpose Supplier Device Package: 6-UDFN (1.6x1.6) |
на замовлення 276000 шт: термін постачання 21-31 дні (днів) |
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| FAN54046UCX-T | onsemi |
Description: USB-OTG, 1.55A, LI-ION SWITCHINGPackaging: Bulk Package / Case: 25-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 25-WLCSP (2.4x2) Charge Current - Max: 1.55A Programmable Features: Current, Timer, Voltage Fault Protection: Over Temperature, Over Voltage, Short Circuit Voltage - Supply (Max): 6V Battery Pack Voltage: 4.4V (Max) Current - Charging: Constant - Programmable |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC79L15ACDR2 | onsemi |
Description: IC REG LINEAR -15V 100MA 8-SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Voltage - Input (Max): -35V Number of Regulators: 1 Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): -15V PSRR: 39dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) Protection Features: Over Temperature, Short Circuit |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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FDMS3626S | onsemi |
Description: MOSFET 2N-CH 25V 17.5A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.5A, 25A Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: Power56 |
на замовлення 558 шт: термін постачання 21-31 дні (днів) |
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MC14569BDWG | onsemi |
Description: IC DIVIDER BY N DL 4BIT 16SOICPackaging: Bulk Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Divide-by-N Reset: Asynchronous Operating Temperature: -55°C ~ 125°C Trigger Type: Positive Edge Supplier Device Package: 16-SOIC Voltage - Supply: 3 V ~ 18 V Count Rate: 13 MHz Number of Bits per Element: 4 |
на замовлення 339 шт: термін постачання 21-31 дні (днів) |
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MC14569BDWR2G | onsemi |
Description: IC DIVIDER BY N DL 4BIT 16SOICPackaging: Bulk Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Divide-by-N Reset: Asynchronous Operating Temperature: -55°C ~ 125°C Trigger Type: Positive Edge Supplier Device Package: 16-SOIC Voltage - Supply: 3 V ~ 18 V Count Rate: 13 MHz Number of Bits per Element: 4 |
на замовлення 1149 шт: термін постачання 21-31 дні (днів) |
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FSFR1800US | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIPPackaging: Tube Package / Case: 10-SSIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Power (Watts): 260 W |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
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FSFR1800US | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIPPackaging: Tube Package / Case: 10-SSIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Power (Watts): 260 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSVBCP5616MTWG | onsemi |
Description: TRANS NPN 80V 1A 3WDFNWPackaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 140MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 1n5226B | onsemi |
Description: DIODE ZENER 3.3V 500MW DO35Current - Reverse Leakage @ Vr: 25 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 500 mW Supplier Device Package: DO-35 Impedance (Max) (Zzt): 28 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk |
на замовлення 302766 шт: термін постачання 21-31 дні (днів) |
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NSS30070MR6T1G | onsemi |
Description: TRANS PNP 30V 0.7A SC74Power - Max: 342 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: SC-74 DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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SS3003CH-TL-E | onsemi |
Description: DIODE SCHOTTKY 30V 3A 6CPHPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Schottky Capacitance @ Vr, F: 90pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: 6-CPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A Current - Reverse Leakage @ Vr: 1.4 mA @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC10LVEP16DG | onsemi |
Description: IC RECEIVER/DRVR ECL DIFF 8SOICSupplier Device Package: 8-SOIC Supply Voltage: 2.375V ~ 3.8V Operating Temperature: -40°C ~ 85°C Logic Type: Differential Receiver/Driver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
на замовлення 49148 шт: термін постачання 21-31 дні (днів) |
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NTBG032N065M3S | onsemi |
Description: SIC MOS D2PAK-7L 32MOHM 650V M3SPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NTBG032N065M3S | onsemi |
Description: SIC MOS D2PAK-7L 32MOHM 650V M3SPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V |
на замовлення 1174 шт: термін постачання 21-31 дні (днів) |
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MPSA92RLRMG | onsemi |
Description: TRANS PNP 300V 0.5A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 625 mW |
на замовлення 153940 шт: термін постачання 21-31 дні (днів) |
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MMVL3102T1 | onsemi |
Description: TUNING DIODE 30V C3/C25 = 4.5-4.Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 25pF @ 3V, 1MHz Q @ Vr, F: 200 @ 3V, 50MHz Capacitance Ratio Condition: C3/C25 Supplier Device Package: SOD-323 Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 4.8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC595AMN1TWG-Q | onsemi |
Description: IC TRI-STATE 8BIT 16-QFNPackaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel, Serial Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-QFN (2.5x3.5) Number of Bits per Element: 8 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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MC74HC595AMN1TWG-Q | onsemi |
Description: IC TRI-STATE 8BIT 16-QFNPackaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel, Serial Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-QFN (2.5x3.5) Number of Bits per Element: 8 |
на замовлення 14218 шт: термін постачання 21-31 дні (днів) |
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NSR0530HT3G | onsemi |
Description: DIODE SCHOTTKY 30V 500MA SOD323Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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MC74VHC32DR2G-Q | onsemi |
Description: LOG CMOS GATE OR QUADPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Grade: Automotive Number of Circuits: 4 Current - Quiescent (Max): 2 µA Qualification: AEC-Q100 |
на замовлення 57500 шт: термін постачання 21-31 дні (днів) |
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MC74VHC32DR2G-Q | onsemi |
Description: LOG CMOS GATE OR QUADPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Grade: Automotive Number of Circuits: 4 Current - Quiescent (Max): 2 µA Qualification: AEC-Q100 |
на замовлення 59960 шт: термін постачання 21-31 дні (днів) |
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CPH6355-TL-W | onsemi |
Description: MOSFET P-CH 30V 3A 6CPHInput Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: 6-CPH Vgs(th) (Max) @ Id: 2.6V @ 1mA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 169mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TIP49 | onsemi |
Description: TRANS NPN 350V 1A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Frequency - Transition: 10MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 2 W |
на замовлення 5034 шт: термін постачання 21-31 дні (днів) |
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TIP49 | onsemi |
Description: TRANS NPN 350V 1A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Frequency - Transition: 10MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AX-SFAZ-API-1-01-TX30 | onsemi |
Description: IC RF TXRX+MCU ISM<1GHZ 40QFNPackaging: Bulk Package / Case: 40-VFQFN Exposed Pad Sensitivity: -128dBm Mounting Type: Surface Mount Frequency: 922MHz Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Power - Output: 24dBm Protocol: SIGFOX™ Current - Receiving: 34mA Data Rate (Max): 600bps Current - Transmitting: 230mA Supplier Device Package: 40-QFN (7x5) GPIO: 8 Modulation: FSK, GFSK RF Family/Standard: General ISM < 1GHz Serial Interfaces: SPI, UART DigiKey Programmable: Not Verified |
на замовлення 2937 шт: термін постачання 21-31 дні (днів) |
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MC74VHC1GT125DBVT1G-Q | onsemi |
Description: IC BUFF 2V/5.5V SC-74APackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: SC-74A Grade: Automotive Qualification: AEC-Q100 |
на замовлення 144000 шт: термін постачання 21-31 дні (днів) |
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MC74VHC1GT125DBVT1G-Q | onsemi |
Description: IC BUFF 2V/5.5V SC-74APackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: SC-74A Grade: Automotive Qualification: AEC-Q100 |
на замовлення 145021 шт: термін постачання 21-31 дні (днів) |
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MC74VHC1G50DBVT1G | onsemi |
Description: IC BUFF 2V/5.5V SC-74APackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: CMOS Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: SC-74A |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74VHC1G50DBVT1G | onsemi |
Description: IC BUFF 2V/5.5V SC-74APackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: CMOS Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: SC-74A |
на замовлення 2523 шт: термін постачання 21-31 дні (днів) |
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MC74LVX32DTR2G-Q | onsemi |
Description: LOG CMOS GATE OR QUADCurrent - Quiescent (Max): 2 µA Number of Circuits: 4 Max Propagation Delay @ V, Max CL: 10.1ns @ 3.3V, 50pF Input Logic Level - Low: 0.5V ~ 0.8V Input Logic Level - High: 1.5V ~ 2.4V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 4mA, 4mA Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: OR Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 120000 шт: термін постачання 21-31 дні (днів) |
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MC74LVX32DTR2G-Q | onsemi |
Description: LOG CMOS GATE OR QUADCurrent - Quiescent (Max): 2 µA Number of Circuits: 4 Max Propagation Delay @ V, Max CL: 10.1ns @ 3.3V, 50pF Input Logic Level - Low: 0.5V ~ 0.8V Input Logic Level - High: 1.5V ~ 2.4V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 4mA, 4mA Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: OR Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 120000 шт: термін постачання 21-31 дні (днів) |
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| BCP5316MTWG |
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Виробник: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
на замовлення 2961 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.35 грн |
| 10+ | 31.94 грн |
| 100+ | 20.60 грн |
| 500+ | 14.76 грн |
| 1000+ | 13.28 грн |
| NVD5890NT4G-VF01 |
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Виробник: onsemi
Description: POWER MOSFET 40V, 123A, 3.7 MOHM
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: POWER MOSFET 40V, 123A, 3.7 MOHM
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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| NVD5805NT4G-VF01 |
![]() |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: SINGLE N-CHANNEL POWER MOSFET 40
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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| SVD5867NLT4G-UM |
![]() |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 60
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: SINGLE N-CHANNEL POWER MOSFET 60
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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| FDU5N50NZTU |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 500V 4A DPAK3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK3 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 500V 4A DPAK3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK3 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 13509 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 620+ | 34.50 грн |
| NRVBA320NT3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 3A SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 20V 3A SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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| NRVBA320NT3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 3A SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 20V 3A SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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| NVMFS5C404NLWFET3G |
![]() |
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
Description: SINGLE N-CHANNEL POWER MOSFET 40
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
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| NVBG023N065M3S |
![]() |
Виробник: onsemi
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 519.18 грн |
| NVBG023N065M3S |
![]() |
Виробник: onsemi
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V
Qualification: AEC-Q101
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 993.54 грн |
| 10+ | 674.26 грн |
| 100+ | 611.93 грн |
| NXH010P90MNF1PTG |
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Виробник: onsemi
Description: MOSFET 2N-CH 900V 154A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 328W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
Description: MOSFET 2N-CH 900V 154A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 328W (Tj)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7007pF @ 450V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 546.4nC @ 15V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9025.35 грн |
| 28+ | 7614.23 грн |
| NXH010P120MNF1PTG |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8371.24 грн |
| 28+ | 6957.17 грн |
| TN6714A |
![]() |
Виробник: onsemi
Description: TRANS NPN 30V 2A TO226-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-226-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS NPN 30V 2A TO226-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-226-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
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| NVMJS1D7N04CTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NVMJS1D7N04CTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 35A/185A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
на замовлення 2913 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 163.91 грн |
| 10+ | 101.33 грн |
| 100+ | 69.24 грн |
| 500+ | 52.07 грн |
| 1000+ | 51.30 грн |
| FQA13N50C |
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Виробник: onsemi
Description: MOSFET N-CH 500V 13.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Description: MOSFET N-CH 500V 13.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
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| MB6S |
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Виробник: onsemi
Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 2501592 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.43 грн |
| 6000+ | 10.08 грн |
| MB6S |
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Виробник: onsemi
Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1P 600V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 2501939 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.35 грн |
| 10+ | 31.42 грн |
| 100+ | 20.27 грн |
| 500+ | 14.48 грн |
| 1000+ | 13.02 грн |
| NLV74LCX00DTR2G |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| NLV74LCX00DTR2G |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Grade: Automotive
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.77 грн |
| 10+ | 44.00 грн |
| 25+ | 36.51 грн |
| 100+ | 26.31 грн |
| 250+ | 22.41 грн |
| 500+ | 20.00 грн |
| 1000+ | 17.69 грн |
| 74LCX00SJX |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-SOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE NAND 4CH 2-INP 14SOP
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-SOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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| 74LCX00SJX |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-SOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE NAND 4CH 2-INP 14SOP
Current - Quiescent (Max): 10 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-SOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
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| MC74HC32ADR2G-Q |
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Виробник: onsemi
Description: QUAD OR GATE
Current - Quiescent (Max): 1 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-SOIC
Number of Inputs: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: QUAD OR GATE
Current - Quiescent (Max): 1 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-SOIC
Number of Inputs: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| FAN1616AD25X |
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Виробник: onsemi
Description: IC REG LINEAR 2.5V 500MA TO252AA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 1.2V @ 500mA
PSRR: 72dB (120Hz)
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: TO-252AA
Number of Regulators: 1
Voltage - Input (Max): 18V
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 2.5V 500MA TO252AA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 1.2V @ 500mA
PSRR: 72dB (120Hz)
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: TO-252AA
Number of Regulators: 1
Voltage - Input (Max): 18V
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| NLX1G10BMX1TCG |
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Виробник: onsemi
Description: IC GATE NAND 1CH 3-INP 6ULLGA
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Supplier Device Package: 6-ULLGA (1.2x1)
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 6-XFLGA
Packaging: Bulk
Description: IC GATE NAND 1CH 3-INP 6ULLGA
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Supplier Device Package: 6-ULLGA (1.2x1)
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 6-XFLGA
Packaging: Bulk
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2959+ | 7.19 грн |
| NC7SVL04L6X |
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Виробник: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 0.9V ~ 1.5V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 0.9V ~ 1.5V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
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Мінімальне замовлення: 5000 шт
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| NC7SVL04L6X |
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Виробник: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 0.9V ~ 1.5V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 0.9V ~ 1.5V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.5ns @ 3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
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| NSM3005NZTAG |
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Виробник: onsemi
Description: TRANS PNP 30V 500MA 6UDFN
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V PNP, 20V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-UDFN (1.6x1.6)
Description: TRANS PNP 30V 500MA 6UDFN
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V PNP, 20V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-UDFN (1.6x1.6)
на замовлення 276000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.45 грн |
| 6000+ | 10.72 грн |
| NSM3005NZTAG |
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Виробник: onsemi
Description: TRANS PNP 30V 500MA 6UDFN
Packaging: Cut Tape (CT)
Voltage - Rated: 30V PNP, 20V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-UDFN (1.6x1.6)
Description: TRANS PNP 30V 500MA 6UDFN
Packaging: Cut Tape (CT)
Voltage - Rated: 30V PNP, 20V N-Channel
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP, N-Channel
Applications: General Purpose
Supplier Device Package: 6-UDFN (1.6x1.6)
на замовлення 276000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.31 грн |
| 10+ | 36.04 грн |
| 100+ | 23.31 грн |
| 500+ | 16.72 грн |
| 1000+ | 15.05 грн |
| FAN54046UCX-T |
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Виробник: onsemi
Description: USB-OTG, 1.55A, LI-ION SWITCHING
Packaging: Bulk
Package / Case: 25-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 25-WLCSP (2.4x2)
Charge Current - Max: 1.55A
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 6V
Battery Pack Voltage: 4.4V (Max)
Current - Charging: Constant - Programmable
Description: USB-OTG, 1.55A, LI-ION SWITCHING
Packaging: Bulk
Package / Case: 25-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 25-WLCSP (2.4x2)
Charge Current - Max: 1.55A
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 6V
Battery Pack Voltage: 4.4V (Max)
Current - Charging: Constant - Programmable
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| MC79L15ACDR2 |
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Виробник: onsemi
Description: IC REG LINEAR -15V 100MA 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): -15V
PSRR: 39dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR -15V 100MA 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): -15V
PSRR: 39dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 826+ | 24.40 грн |
| FDMS3626S |
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Виробник: onsemi
Description: MOSFET 2N-CH 25V 17.5A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 25V 17.5A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power56
на замовлення 558 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.36 грн |
| 10+ | 94.63 грн |
| 100+ | 67.19 грн |
| 500+ | 51.64 грн |
| MC14569BDWG |
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Виробник: onsemi
Description: IC DIVIDER BY N DL 4BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Divide-by-N
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 13 MHz
Number of Bits per Element: 4
Description: IC DIVIDER BY N DL 4BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Divide-by-N
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 13 MHz
Number of Bits per Element: 4
на замовлення 339 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 154+ | 129.17 грн |
| MC14569BDWR2G |
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Виробник: onsemi
Description: IC DIVIDER BY N DL 4BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Divide-by-N
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 13 MHz
Number of Bits per Element: 4
Description: IC DIVIDER BY N DL 4BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Divide-by-N
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 13 MHz
Number of Bits per Element: 4
на замовлення 1149 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 159+ | 125.19 грн |
| FSFR1800US |
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Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 260 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 260 W
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 178.38 грн |
| FSFR1800US |
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Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 260 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 260 W
товару немає в наявності
В кошику
од. на суму грн.
| NSVBCP5616MTWG |
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Виробник: onsemi
Description: TRANS NPN 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
Description: TRANS NPN 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| 1n5226B |
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Виробник: onsemi
Description: DIODE ZENER 3.3V 500MW DO35
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 3.3V 500MW DO35
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
на замовлення 302766 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.82 грн |
| 48+ | 6.33 грн |
| 100+ | 3.87 грн |
| 500+ | 2.64 грн |
| 1000+ | 2.31 грн |
| 2000+ | 2.04 грн |
| 5000+ | 1.71 грн |
| 10000+ | 1.53 грн |
| 50000+ | 1.21 грн |
| NSS30070MR6T1G |
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Виробник: onsemi
Description: TRANS PNP 30V 0.7A SC74
Power - Max: 342 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: SC-74
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS PNP 30V 0.7A SC74
Power - Max: 342 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: SC-74
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.58 грн |
| 10+ | 33.80 грн |
| 100+ | 23.16 грн |
| 500+ | 17.16 грн |
| 1000+ | 15.65 грн |
| SS3003CH-TL-E |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 3A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: 6-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 15 V
Description: DIODE SCHOTTKY 30V 3A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: 6-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC10LVEP16DG |
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Виробник: onsemi
Description: IC RECEIVER/DRVR ECL DIFF 8SOIC
Supplier Device Package: 8-SOIC
Supply Voltage: 2.375V ~ 3.8V
Operating Temperature: -40°C ~ 85°C
Logic Type: Differential Receiver/Driver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC RECEIVER/DRVR ECL DIFF 8SOIC
Supplier Device Package: 8-SOIC
Supply Voltage: 2.375V ~ 3.8V
Operating Temperature: -40°C ~ 85°C
Logic Type: Differential Receiver/Driver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 49148 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 319.39 грн |
| NTBG032N065M3S |
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Виробник: onsemi
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 264.24 грн |
| NTBG032N065M3S |
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Виробник: onsemi
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
на замовлення 1174 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 595.35 грн |
| 10+ | 392.15 грн |
| 100+ | 311.45 грн |
| MPSA92RLRMG |
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Виробник: onsemi
Description: TRANS PNP 300V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
Description: TRANS PNP 300V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
на замовлення 153940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4537+ | 4.64 грн |
| MMVL3102T1 |
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Виробник: onsemi
Description: TUNING DIODE 30V C3/C25 = 4.5-4.
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 25pF @ 3V, 1MHz
Q @ Vr, F: 200 @ 3V, 50MHz
Capacitance Ratio Condition: C3/C25
Supplier Device Package: SOD-323
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 4.8
Description: TUNING DIODE 30V C3/C25 = 4.5-4.
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 25pF @ 3V, 1MHz
Q @ Vr, F: 200 @ 3V, 50MHz
Capacitance Ratio Condition: C3/C25
Supplier Device Package: SOD-323
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 4.8
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC595AMN1TWG-Q |
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Виробник: onsemi
Description: IC TRI-STATE 8BIT 16-QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-QFN (2.5x3.5)
Number of Bits per Element: 8
Description: IC TRI-STATE 8BIT 16-QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-QFN (2.5x3.5)
Number of Bits per Element: 8
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.83 грн |
| 6000+ | 12.01 грн |
| MC74HC595AMN1TWG-Q |
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Виробник: onsemi
Description: IC TRI-STATE 8BIT 16-QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-QFN (2.5x3.5)
Number of Bits per Element: 8
Description: IC TRI-STATE 8BIT 16-QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-QFN (2.5x3.5)
Number of Bits per Element: 8
на замовлення 14218 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.15 грн |
| 15+ | 19.95 грн |
| 25+ | 17.81 грн |
| 100+ | 14.48 грн |
| 250+ | 13.41 грн |
| 500+ | 12.77 грн |
| 1000+ | 12.07 грн |
| NSR0530HT3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 500MA SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 30V 500MA SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50000+ | 1.14 грн |
| MC74VHC32DR2G-Q |
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Виробник: onsemi
Description: LOG CMOS GATE OR QUAD
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Description: LOG CMOS GATE OR QUAD
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 57500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 9.59 грн |
| 5000+ | 8.96 грн |
| MC74VHC32DR2G-Q |
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Виробник: onsemi
Description: LOG CMOS GATE OR QUAD
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Description: LOG CMOS GATE OR QUAD
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 59960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.42 грн |
| 20+ | 15.04 грн |
| 25+ | 13.40 грн |
| 100+ | 10.84 грн |
| 250+ | 10.01 грн |
| 500+ | 9.51 грн |
| 1000+ | 8.95 грн |
| CPH6355-TL-W |
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Виробник: onsemi
Description: MOSFET P-CH 30V 3A 6CPH
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 6-CPH
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 169mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 3A 6CPH
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 6-CPH
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 169mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TIP49 |
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Виробник: onsemi
Description: TRANS NPN 350V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
Description: TRANS NPN 350V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
на замовлення 5034 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 549+ | 36.48 грн |
| TIP49 |
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Виробник: onsemi
Description: TRANS NPN 350V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
Description: TRANS NPN 350V 1A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
товару немає в наявності
В кошику
од. на суму грн.
| AX-SFAZ-API-1-01-TX30 |
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Виробник: onsemi
Description: IC RF TXRX+MCU ISM<1GHZ 40QFN
Packaging: Bulk
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -128dBm
Mounting Type: Surface Mount
Frequency: 922MHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 24dBm
Protocol: SIGFOX™
Current - Receiving: 34mA
Data Rate (Max): 600bps
Current - Transmitting: 230mA
Supplier Device Package: 40-QFN (7x5)
GPIO: 8
Modulation: FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI, UART
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU ISM<1GHZ 40QFN
Packaging: Bulk
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -128dBm
Mounting Type: Surface Mount
Frequency: 922MHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 24dBm
Protocol: SIGFOX™
Current - Receiving: 34mA
Data Rate (Max): 600bps
Current - Transmitting: 230mA
Supplier Device Package: 40-QFN (7x5)
GPIO: 8
Modulation: FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI, UART
DigiKey Programmable: Not Verified
на замовлення 2937 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 990.87 грн |
| MC74VHC1GT125DBVT1G-Q |
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Виробник: onsemi
Description: IC BUFF 2V/5.5V SC-74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFF 2V/5.5V SC-74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
Grade: Automotive
Qualification: AEC-Q100
на замовлення 144000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.93 грн |
| 6000+ | 1.79 грн |
| MC74VHC1GT125DBVT1G-Q |
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Виробник: onsemi
Description: IC BUFF 2V/5.5V SC-74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFF 2V/5.5V SC-74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
Grade: Automotive
Qualification: AEC-Q100
на замовлення 145021 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.96 грн |
| 87+ | 3.42 грн |
| 100+ | 2.98 грн |
| 120+ | 2.34 грн |
| 250+ | 2.12 грн |
| 500+ | 1.99 грн |
| 1000+ | 1.85 грн |
| MC74VHC1G50DBVT1G |
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Виробник: onsemi
Description: IC BUFF 2V/5.5V SC-74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: CMOS
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
Description: IC BUFF 2V/5.5V SC-74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: CMOS
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| MC74VHC1G50DBVT1G |
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Виробник: onsemi
Description: IC BUFF 2V/5.5V SC-74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: CMOS
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
Description: IC BUFF 2V/5.5V SC-74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: CMOS
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-74A
на замовлення 2523 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 6.19 грн |
| 96+ | 3.13 грн |
| 112+ | 2.68 грн |
| 134+ | 2.10 грн |
| 250+ | 1.90 грн |
| 500+ | 1.78 грн |
| 1000+ | 1.65 грн |
| MC74LVX32DTR2G-Q |
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Виробник: onsemi
Description: LOG CMOS GATE OR QUAD
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 10.1ns @ 3.3V, 50pF
Input Logic Level - Low: 0.5V ~ 0.8V
Input Logic Level - High: 1.5V ~ 2.4V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: LOG CMOS GATE OR QUAD
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 10.1ns @ 3.3V, 50pF
Input Logic Level - Low: 0.5V ~ 0.8V
Input Logic Level - High: 1.5V ~ 2.4V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 12.64 грн |
| 5000+ | 11.07 грн |
| 7500+ | 10.51 грн |
| 12500+ | 9.27 грн |
| 17500+ | 8.92 грн |
| 25000+ | 8.59 грн |
| 62500+ | 8.17 грн |
| MC74LVX32DTR2G-Q |
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Виробник: onsemi
Description: LOG CMOS GATE OR QUAD
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 10.1ns @ 3.3V, 50pF
Input Logic Level - Low: 0.5V ~ 0.8V
Input Logic Level - High: 1.5V ~ 2.4V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: LOG CMOS GATE OR QUAD
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 10.1ns @ 3.3V, 50pF
Input Logic Level - Low: 0.5V ~ 0.8V
Input Logic Level - High: 1.5V ~ 2.4V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.99 грн |
| 10+ | 33.21 грн |
| 25+ | 27.43 грн |
| 100+ | 19.57 грн |
| 250+ | 16.54 грн |
| 500+ | 14.67 грн |
| 1000+ | 12.89 грн |
































