| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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MC74LVX4066MELG | onsemi |
Description: IC SW SPST-NOX4 20OHM SOEIAJ-14Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 85°C (TA) On-State Resistance (Max): 20Ohm -3db Bandwidth: 160MHz Supplier Device Package: SOEIAJ-14 Voltage - Supply, Single (V+): 2V ~ 6V Crosstalk: -80dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 4 |
на замовлення 47344 шт: термін постачання 21-31 дні (днів) |
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UF3C120040K3S | onsemi |
Description: SICFET N-CH 1200V 65A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 115 шт: термін постачання 21-31 дні (днів) |
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UF3C120040K4S | onsemi |
Description: SICFET N-CH 1200V 65A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 3902 шт: термін постачання 21-31 дні (днів) |
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MBR1660 | onsemi |
Description: DIODE SCHOTTKY 60V 16A TO2202Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 16A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
на замовлення 244 шт: термін постачання 21-31 дні (днів) |
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| NTND31211PZTAG | onsemi |
Description: MOSFET 2P-CH 20V 0.127A 6XLLGAInput Capacitance (Ciss) (Max) @ Vds: 12.8pF @ 15V Current - Continuous Drain (Id) @ 25°C: 127mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 125mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel Mounting Type: Surface Mount Package / Case: 6-XFLGA Packaging: Tape & Reel (TR) Supplier Device Package: 6-XLLGA (0.9x0.65) Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NLVHCT14ADR2G | onsemi |
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC Qualification: AEC-Q100 Current - Quiescent (Max): 1 µA Number of Circuits: 6 Grade: Automotive Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF Input Logic Level - Low: 0.1V ~ 0.26V Input Logic Level - High: 3.98V ~ 5.4V Supplier Device Package: 14-SOIC Number of Inputs: 1 Current - Output High, Low: 4mA, 4mA Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Features: Schmitt Trigger Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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NLVHCT14ADR2G | onsemi |
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC Qualification: AEC-Q100 Current - Quiescent (Max): 1 µA Number of Circuits: 6 Grade: Automotive Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF Input Logic Level - Low: 0.1V ~ 0.26V Input Logic Level - High: 3.98V ~ 5.4V Supplier Device Package: 14-SOIC Number of Inputs: 1 Current - Output High, Low: 4mA, 4mA Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Features: Schmitt Trigger Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFS4C908NAT3G | onsemi |
Description: TRENCH 6 30V NCH Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C908NAT3G | onsemi |
Description: TRENCH 6 30V NCH Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| NTMFS4C906NBT1G | onsemi |
Description: TRENCH 6 30V NCH Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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| NTMFS4C906NBT1G | onsemi |
Description: TRENCH 6 30V NCH Packaging: Cut Tape (CT) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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| NTMFS4C906NBT3G | onsemi |
Description: TRENCH 6 30V NCH Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| NTMFS4C908NAT1G | onsemi |
Description: TRENCH 6 30V NCH Packaging: Tape & Reel (TR) |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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NC7WP14P6X | onsemi |
Description: IC INVERT SCHMITT 2CH 2-INP SC88Current - Quiescent (Max): 900 nA Number of Circuits: 2 Max Propagation Delay @ V, Max CL: 9.2ns @ 3.3V, 30pF Input Logic Level - Low: 0.1V ~ 0.6V Input Logic Level - High: 0.65V ~ 2.6V Supplier Device Package: SC-88 (SC-70-6) Number of Inputs: 2 Current - Output High, Low: 2.6mA, 2.6mA Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Features: Schmitt Trigger Packaging: Cut Tape (CT) |
на замовлення 807 шт: термін постачання 21-31 дні (днів) |
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MMBV3401LT3G | onsemi |
Description: RF DIODE PIN 35V 200MW SOT-23-3Power Dissipation (Max): 200 mW Supplier Device Package: SOT-23-3 (TO-236) Voltage - Peak Reverse (Max): 35V Resistance @ If, F: 700mOhm @ 10mA, 100MHz Capacitance @ Vr, F: 1pF @ 20V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: PIN - Single Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UJ3C120070K3S | onsemi |
Description: SICFET N-CH 1200V 34.5A TO247-3Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 254.2W (Tc) |
на замовлення 567 шт: термін постачання 21-31 дні (днів) |
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UF3C120080K3S | onsemi |
Description: SICFET N-CH 1200V 33A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 254.2W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 11404 шт: термін постачання 21-31 дні (днів) |
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UF3C120080K4S | onsemi |
Description: SICFET N-CH 1200V 33A TO247-4Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Power Dissipation (Max): 254.2W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 6V @ 10mA Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
на замовлення 184 шт: термін постачання 21-31 дні (днів) |
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| UJ3C120070K4S | onsemi |
Description: 1200V/70MOHM, N-OFF SIC CASCODE,Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 254.2W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | |||||||||||||||
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NC7SZ19P6X | onsemi |
Description: IC DECODER/DEMUX 1 X 1:2 SC-88Supplier Device Package: SC-88 (SC-70-6) Voltage Supply Source: Single Supply Current - Output High, Low: 32mA, 32mA Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Decoder/Demultiplexer Circuit: 1 x 1:2 Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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NC7SZ19P6X | onsemi |
Description: IC DECODER/DEMUX 1 X 1:2 SC-88Voltage Supply Source: Single Supply Current - Output High, Low: 32mA, 32mA Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Decoder/Demultiplexer Circuit: 1 x 1:2 Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: SC-88 (SC-70-6) |
на замовлення 48333 шт: термін постачання 21-31 дні (днів) |
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UJ3N065080K3S | onsemi |
Description: JFET N-CH 650V 32A TO247-3Resistance - RDS(On): 95 mOhms Power - Max: 190 W Drain to Source Voltage (Vdss): 650 V Supplier Device Package: TO-247-3 Current Drain (Id) - Max: 32 A Voltage - Breakdown (V(BR)GSS): 650 V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 622 шт: термін постачання 21-31 дні (днів) |
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UF3N170400B7S | onsemi |
Description: JFET N-CH 1.7KV 6.8A D2PAK-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V Voltage - Breakdown (V(BR)GSS): 1700 V Current Drain (Id) - Max: 6.8 A Supplier Device Package: D2PAK-7 Drain to Source Voltage (Vdss): 1700 V Power - Max: 68 W Resistance - RDS(On): 500 mOhms Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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UF3N170400B7S | onsemi |
Description: JFET N-CH 1.7KV 6.8A D2PAK-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V Voltage - Breakdown (V(BR)GSS): 1700 V Current Drain (Id) - Max: 6.8 A Supplier Device Package: D2PAK-7 Drain to Source Voltage (Vdss): 1700 V Power - Max: 68 W Resistance - RDS(On): 500 mOhms Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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UJ3N120070K3S | onsemi |
Description: JFET N-CH 1200V 33.5A TO247-3Resistance - RDS(On): 90 mOhms Power - Max: 254 W Drain to Source Voltage (Vdss): 1200 V Supplier Device Package: TO-247-3 Current Drain (Id) - Max: 33.5 A Voltage - Breakdown (V(BR)GSS): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 100V FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 1553 шт: термін постачання 21-31 дні (днів) |
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UJ4C075023K4S | onsemi |
Description: 750V/23MOHM, SIC, CASCODE, G4, TPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
на замовлення 540 шт: термін постачання 21-31 дні (днів) |
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UJ3N120065K3S | onsemi |
Description: JFET N-CH 1.2KV 34A TO247-3Current - Drain (Idss) @ Vds (Vgs=0): 5 µA @ 1200 V Resistance - RDS(On): 55 mOhms Power - Max: 254 W Drain to Source Voltage (Vdss): 1200 V Supplier Device Package: TO-247-3 Current Drain (Id) - Max: 34 A Voltage - Breakdown (V(BR)GSS): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 1008pF @ 100V FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 2561 шт: термін постачання 21-31 дні (днів) |
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UJ4C075018K3S | onsemi |
Description: SICFET N-CH 750V 81A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 12V Power Dissipation (Max): 385W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V |
на замовлення 2748 шт: термін постачання 21-31 дні (днів) |
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UJ4SC075011K4S | onsemi |
Description: 750V/11MOHM, SIC, STACKED CASCODPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V |
на замовлення 2271 шт: термін постачання 21-31 дні (днів) |
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UJ4SC075009K4S | onsemi |
Description: 750V/9MOHM, SIC, STACKED CASCODESupplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 5.5V @ 10mA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V Current - Continuous Drain (Id) @ 25°C: 106A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V |
на замовлення 422 шт: термін постачання 21-31 дні (днів) |
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UJ3N120035K3S | onsemi |
Description: JFET N-CH 1200V 63A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V Voltage - Breakdown (V(BR)GSS): 1200 V Current Drain (Id) - Max: 63 A Supplier Device Package: TO-247-3 Drain to Source Voltage (Vdss): 1200 V Power - Max: 429 W Resistance - RDS(On): 45 mOhms |
на замовлення 3608 шт: термін постачання 21-31 дні (днів) |
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UJ4SC075006K4S | onsemi |
Description: 750V/6MOHM, SIC, STACKED CASCODEInput Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: TO-247-4 Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 12V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 714W (Tc) |
на замовлення 647 шт: термін постачання 21-31 дні (днів) |
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UF3SC120009K4S | onsemi |
Description: SICFET N-CH 1200V 120A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V Power Dissipation (Max): 789W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V |
на замовлення 1371 шт: термін постачання 21-31 дні (днів) |
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UF3SC065007K4S | onsemi |
Description: MOSFET N-CH 650V 120A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 12V Power Dissipation (Max): 789W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 100 V |
на замовлення 494 шт: термін постачання 21-31 дні (днів) |
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FAN4174IP5X | onsemi |
Description: IC OPAMP VFB 1 CIRCUIT SC70-5Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Voltage Feedback Operating Temperature: -40°C ~ 85°C Current - Supply: 200µA Slew Rate: 3V/µs Gain Bandwidth Product: 3.7 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 8 mV Supplier Device Package: SC-70-5 Number of Circuits: 1 Current - Output / Channel: 33 mA -3db Bandwidth: 3.7 MHz Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP81102MNTXG | onsemi |
Description: IC REG BUCK CTLR 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 32-QFN (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP81102MNTXG | onsemi |
Description: IC REG BUCK CTLR 32QFN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 32-QFN (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP81102MNTWG | onsemi |
Description: IC REG BUCK CTLR 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 32-QFN (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74ACT151DR2 | onsemi |
Description: MUX 1-ELEMENT 8-IN 16-PIN SOICPackaging: Bulk |
на замовлення 56363 шт: термін постачання 21-31 дні (днів) |
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FDMS9408-F085 | onsemi |
Description: MOSFET N-CH 40V 80A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power56 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS9408L-F085 | onsemi |
Description: MOSFET N-CH 40V 80A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDS4070N3 | onsemi |
Description: MOSFET N-CH 40V 15.3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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FDS4070N3 | onsemi |
Description: MOSFET N-CH 40V 15.3A 8SOInput Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SO FLMP Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDS4070N7 | onsemi |
Description: MOSFET N-CH 40V 15.3A 8SOInput Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SO FLMP Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDS4070N7 | onsemi |
Description: MOSFET N-CH 40V 15.3A 8SOInput Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SO FLMP Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KSC1507YTU | onsemi |
Description: TRANS NPN 300V 200UA TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V Frequency - Transition: 80MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 200 µA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 15 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLA9306USG | onsemi |
Description: IC XLTR VL BIDIR US8Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Supplier Device Package: US8 Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Number of Circuits: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NLA9306USG | onsemi |
Description: IC XLTR VL BIDIR US8Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Supplier Device Package: US8 Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV57085DR2G | onsemi |
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 7.5A, 7A Technology: Capacitive Coupling Current - Output High, Low: 7.5A, 7A, 7.5A, 7A Voltage - Isolation: 2500Vrms Approval Agency: UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 30ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 0V ~ 30V Qualification: AEC-Q100 |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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NCV57085DR2G | onsemi |
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 7.5A, 7A Technology: Capacitive Coupling Current - Output High, Low: 7.5A, 7A, 7.5A, 7A Voltage - Isolation: 2500Vrms Approval Agency: UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 30ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 0V ~ 30V Qualification: AEC-Q100 |
на замовлення 13990 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5216T1G | onsemi |
Description: NPN BIPOLAR DIGITAL TRANSISTOR (Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
на замовлення 93000 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5216T1G | onsemi |
Description: NPN BIPOLAR DIGITAL TRANSISTOR (Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
на замовлення 93000 шт: термін постачання 21-31 дні (днів) |
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AR0234CSSC00SUKA0-CP1 | onsemi |
Description: 2MP 1/3 CIS SOPackaging: Bulk Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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AR0234CSSM00SUKA0-CP2 | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||
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AR0234CSSM28SUKA0-CP2 | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tube Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||
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AR0234CSSC28SUKA0-CP2 | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||
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AR0234CSSC00SUKA0-CP2 | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||
| AR0234CSSM00SUD20 | onsemi |
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I Packaging: Bulk Package / Case: Die Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: Die Frames per Second: 120.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AR0234CSSC28SUD20 | onsemi |
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I Packaging: Bulk Package / Case: Die Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: Die Frames per Second: 120.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AR0234CSSM28SUD20 | onsemi |
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I Packaging: Bulk Package / Case: Die Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: Die Frames per Second: 120.0 |
товару немає в наявності |
В кошику од. на суму грн. |
| MC74LVX4066MELG |
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Виробник: onsemi
Description: IC SW SPST-NOX4 20OHM SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 85°C (TA)
On-State Resistance (Max): 20Ohm
-3db Bandwidth: 160MHz
Supplier Device Package: SOEIAJ-14
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -80dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 4
Description: IC SW SPST-NOX4 20OHM SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 85°C (TA)
On-State Resistance (Max): 20Ohm
-3db Bandwidth: 160MHz
Supplier Device Package: SOEIAJ-14
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -80dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 4
на замовлення 47344 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 807+ | 28.09 грн |
| UF3C120040K3S |
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Виробник: onsemi
Description: SICFET N-CH 1200V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: SICFET N-CH 1200V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2037.03 грн |
| 30+ | 1267.69 грн |
| 60+ | 1185.28 грн |
| UF3C120040K4S |
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Виробник: onsemi
Description: SICFET N-CH 1200V 65A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: SICFET N-CH 1200V 65A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 3902 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2045.76 грн |
| 30+ | 1273.49 грн |
| 60+ | 1190.77 грн |
| 120+ | 1064.52 грн |
| MBR1660 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 16A TO2202
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 16A TO2202
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 244 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.68 грн |
| 50+ | 102.64 грн |
| 100+ | 92.47 грн |
| NTND31211PZTAG |
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Виробник: onsemi
Description: MOSFET 2P-CH 20V 0.127A 6XLLGA
Input Capacitance (Ciss) (Max) @ Vds: 12.8pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 127mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 125mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 6-XFLGA
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-XLLGA (0.9x0.65)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Description: MOSFET 2P-CH 20V 0.127A 6XLLGA
Input Capacitance (Ciss) (Max) @ Vds: 12.8pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 127mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 125mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 6-XFLGA
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-XLLGA (0.9x0.65)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
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| NLVHCT14ADR2G |
Виробник: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 6
Grade: Automotive
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Input Logic Level - Low: 0.1V ~ 0.26V
Input Logic Level - High: 3.98V ~ 5.4V
Supplier Device Package: 14-SOIC
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 6
Grade: Automotive
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Input Logic Level - Low: 0.1V ~ 0.26V
Input Logic Level - High: 3.98V ~ 5.4V
Supplier Device Package: 14-SOIC
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| NLVHCT14ADR2G |
Виробник: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 6
Grade: Automotive
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Input Logic Level - Low: 0.1V ~ 0.26V
Input Logic Level - High: 3.98V ~ 5.4V
Supplier Device Package: 14-SOIC
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 6
Grade: Automotive
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Input Logic Level - Low: 0.1V ~ 0.26V
Input Logic Level - High: 3.98V ~ 5.4V
Supplier Device Package: 14-SOIC
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| NTMFS4C908NAT3G |
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 13.75 грн |
| NTMFS4C908NAT3G |
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.85 грн |
| 10+ | 36.80 грн |
| 100+ | 23.79 грн |
| 500+ | 17.08 грн |
| 1000+ | 15.39 грн |
| 2000+ | 13.97 грн |
| NTMFS4C906NBT1G |
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 17.36 грн |
| NTMFS4C906NBT1G |
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.81 грн |
| 10+ | 39.40 грн |
| 100+ | 25.57 грн |
| 500+ | 18.40 грн |
| NTMFS4C906NBT3G |
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 26.50 грн |
| NTMFS4C908NAT1G |
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 26.60 грн |
| 3000+ | 23.55 грн |
| 4500+ | 22.50 грн |
| NC7WP14P6X |
![]() |
Виробник: onsemi
Description: IC INVERT SCHMITT 2CH 2-INP SC88
Current - Quiescent (Max): 900 nA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 9.2ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.6V
Input Logic Level - High: 0.65V ~ 2.6V
Supplier Device Package: SC-88 (SC-70-6)
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Description: IC INVERT SCHMITT 2CH 2-INP SC88
Current - Quiescent (Max): 900 nA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 9.2ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.6V
Input Logic Level - High: 0.65V ~ 2.6V
Supplier Device Package: SC-88 (SC-70-6)
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
на замовлення 807 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.26 грн |
| 10+ | 35.28 грн |
| 25+ | 29.14 грн |
| 100+ | 20.86 грн |
| 250+ | 17.68 грн |
| 500+ | 15.72 грн |
| MMBV3401LT3G |
![]() |
Виробник: onsemi
Description: RF DIODE PIN 35V 200MW SOT-23-3
Power Dissipation (Max): 200 mW
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: RF DIODE PIN 35V 200MW SOT-23-3
Power Dissipation (Max): 200 mW
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| UJ3C120070K3S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 34.5A TO247-3
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Description: SICFET N-CH 1200V 34.5A TO247-3
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
на замовлення 567 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1189.39 грн |
| 30+ | 804.82 грн |
| UF3C120080K3S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 33A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 1200V 33A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 11404 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1151.33 грн |
| 30+ | 734.49 грн |
| UF3C120080K4S |
![]() |
Виробник: onsemi
Description: SICFET N-CH 1200V 33A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 6V @ 10mA
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: SICFET N-CH 1200V 33A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 6V @ 10mA
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1355.12 грн |
| 30+ | 819.50 грн |
| 120+ | 735.33 грн |
| UJ3C120070K4S |
![]() |
Виробник: onsemi
Description: 1200V/70MOHM, N-OFF SIC CASCODE,
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: 1200V/70MOHM, N-OFF SIC CASCODE,
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 254.2W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| NC7SZ19P6X |
![]() |
Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Supplier Device Package: SC-88 (SC-70-6)
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Supplier Device Package: SC-88 (SC-70-6)
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.84 грн |
| 6000+ | 3.29 грн |
| 9000+ | 3.09 грн |
| 15000+ | 2.69 грн |
| 21000+ | 2.56 грн |
| 30000+ | 2.44 грн |
| NC7SZ19P6X |
![]() |
Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88 (SC-70-6)
Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88 (SC-70-6)
на замовлення 48333 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 7.14 грн |
| 68+ | 4.51 грн |
| 78+ | 3.94 грн |
| 100+ | 3.11 грн |
| 250+ | 2.83 грн |
| 500+ | 2.66 грн |
| 1000+ | 2.48 грн |
| UJ3N065080K3S |
![]() |
Виробник: onsemi
Description: JFET N-CH 650V 32A TO247-3
Resistance - RDS(On): 95 mOhms
Power - Max: 190 W
Drain to Source Voltage (Vdss): 650 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 32 A
Voltage - Breakdown (V(BR)GSS): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: JFET N-CH 650V 32A TO247-3
Resistance - RDS(On): 95 mOhms
Power - Max: 190 W
Drain to Source Voltage (Vdss): 650 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 32 A
Voltage - Breakdown (V(BR)GSS): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 622 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 697.78 грн |
| 30+ | 419.45 грн |
| 120+ | 400.18 грн |
| 510+ | 356.92 грн |
| UF3N170400B7S |
![]() |
Виробник: onsemi
Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 351.00 грн |
| UF3N170400B7S |
![]() |
Виробник: onsemi
Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 797.69 грн |
| 10+ | 530.90 грн |
| 50+ | 429.46 грн |
| 100+ | 388.25 грн |
| UJ3N120070K3S |
![]() |
Виробник: onsemi
Description: JFET N-CH 1200V 33.5A TO247-3
Resistance - RDS(On): 90 mOhms
Power - Max: 254 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 33.5 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: JFET N-CH 1200V 33.5A TO247-3
Resistance - RDS(On): 90 mOhms
Power - Max: 254 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 33.5 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1553 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1345.60 грн |
| 30+ | 813.42 грн |
| 120+ | 729.88 грн |
| UJ4C075023K4S |
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Виробник: onsemi
Description: 750V/23MOHM, SIC, CASCODE, G4, T
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/23MOHM, SIC, CASCODE, G4, T
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 837.33 грн |
| 30+ | 482.95 грн |
| 60+ | 444.42 грн |
| 120+ | 386.66 грн |
| 510+ | 340.16 грн |
| UJ3N120065K3S |
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Виробник: onsemi
Description: JFET N-CH 1.2KV 34A TO247-3
Current - Drain (Idss) @ Vds (Vgs=0): 5 µA @ 1200 V
Resistance - RDS(On): 55 mOhms
Power - Max: 254 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 34 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1008pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: JFET N-CH 1.2KV 34A TO247-3
Current - Drain (Idss) @ Vds (Vgs=0): 5 µA @ 1200 V
Resistance - RDS(On): 55 mOhms
Power - Max: 254 W
Drain to Source Voltage (Vdss): 1200 V
Supplier Device Package: TO-247-3
Current Drain (Id) - Max: 34 A
Voltage - Breakdown (V(BR)GSS): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 1008pF @ 100V
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 2561 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1444.72 грн |
| 30+ | 878.60 грн |
| 120+ | 797.98 грн |
| UJ4C075018K3S |
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Виробник: onsemi
Description: SICFET N-CH 750V 81A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 12V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
Description: SICFET N-CH 750V 81A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 12V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
на замовлення 2748 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 977.68 грн |
| 30+ | 568.55 грн |
| 60+ | 524.13 грн |
| 120+ | 456.85 грн |
| 510+ | 385.80 грн |
| UJ4SC075011K4S |
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Виробник: onsemi
Description: 750V/11MOHM, SIC, STACKED CASCOD
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
Description: 750V/11MOHM, SIC, STACKED CASCOD
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
на замовлення 2271 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1357.49 грн |
| 30+ | 822.41 грн |
| 120+ | 741.37 грн |
| UJ4SC075009K4S |
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Виробник: onsemi
Description: 750V/9MOHM, SIC, STACKED CASCODE
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Description: 750V/9MOHM, SIC, STACKED CASCODE
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
на замовлення 422 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2799.04 грн |
| 30+ | 1804.37 грн |
| UJ3N120035K3S |
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Виробник: onsemi
Description: JFET N-CH 1200V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 63 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 429 W
Resistance - RDS(On): 45 mOhms
Description: JFET N-CH 1200V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 63 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 429 W
Resistance - RDS(On): 45 mOhms
на замовлення 3608 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2547.68 грн |
| 30+ | 1616.54 грн |
| 120+ | 1493.29 грн |
| UJ4SC075006K4S |
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Виробник: onsemi
Description: 750V/6MOHM, SIC, STACKED CASCODE
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 12V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 714W (Tc)
Description: 750V/6MOHM, SIC, STACKED CASCODE
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-4
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 12V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 714W (Tc)
на замовлення 647 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3550.74 грн |
| 30+ | 2459.05 грн |
| UF3SC120009K4S |
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Виробник: onsemi
Description: SICFET N-CH 1200V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V
Description: SICFET N-CH 1200V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V
на замовлення 1371 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4778.98 грн |
| 30+ | 3246.48 грн |
| UF3SC065007K4S |
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Виробник: onsemi
Description: MOSFET N-CH 650V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 100 V
Description: MOSFET N-CH 650V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 100 V
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4896.34 грн |
| 30+ | 3657.94 грн |
| FAN4174IP5X |
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Виробник: onsemi
Description: IC OPAMP VFB 1 CIRCUIT SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 8 mV
Supplier Device Package: SC-70-5
Number of Circuits: 1
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
Description: IC OPAMP VFB 1 CIRCUIT SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 8 mV
Supplier Device Package: SC-70-5
Number of Circuits: 1
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
товару немає в наявності
В кошику
од. на суму грн.
| NCP81102MNTXG |
Виробник: onsemi
Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
товару немає в наявності
В кошику
од. на суму грн.
| NCP81102MNTXG |
Виробник: onsemi
Description: IC REG BUCK CTLR 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Description: IC REG BUCK CTLR 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
товару немає в наявності
В кошику
од. на суму грн.
| NCP81102MNTWG |
Виробник: onsemi
Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
товару немає в наявності
В кошику
од. на суму грн.
| MC74ACT151DR2 |
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на замовлення 56363 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 956+ | 21.09 грн |
| FDMS9408-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Qualification: AEC-Q101
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од. на суму грн.
| FDMS9408L-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 20 V
Qualification: AEC-Q101
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| FDS4070N3 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
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Мінімальне замовлення: 2500 шт
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| FDS4070N3 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 15.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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| FDS4070N7 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 15.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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| FDS4070N7 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 15.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO FLMP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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| KSC1507YTU |
![]() |
Виробник: onsemi
Description: TRANS NPN 300V 200UA TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 200 µA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Description: TRANS NPN 300V 200UA TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 200 µA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
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| NLA9306USG |
![]() |
Виробник: onsemi
Description: IC XLTR VL BIDIR US8
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR US8
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
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Мінімальне замовлення: 3000 шт
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| NLA9306USG |
![]() |
Виробник: onsemi
Description: IC XLTR VL BIDIR US8
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR US8
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
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| NCV57085DR2G |
![]() |
Виробник: onsemi
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 57.67 грн |
| 5000+ | 54.82 грн |
| NCV57085DR2G |
![]() |
Виробник: onsemi
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
на замовлення 13990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.58 грн |
| 10+ | 124.46 грн |
| 25+ | 105.46 грн |
| 100+ | 78.77 грн |
| 250+ | 68.85 грн |
| 500+ | 62.74 грн |
| 1000+ | 56.68 грн |
| NSVMUN5216T1G |
![]() |
Виробник: onsemi
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.90 грн |
| 6000+ | 2.49 грн |
| 9000+ | 2.34 грн |
| 15000+ | 2.03 грн |
| 21000+ | 1.94 грн |
| 30000+ | 1.84 грн |
| 75000+ | 1.61 грн |
| NSVMUN5216T1G |
![]() |
Виробник: onsemi
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.27 грн |
| AR0234CSSC00SUKA0-CP1 |
![]() |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Bulk
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Bulk
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 3541.11 грн |
| AR0234CSSM00SUKA0-CP2 |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
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Мінімальне замовлення: 50 шт
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| AR0234CSSM28SUKA0-CP2 |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tube
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tube
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
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Мінімальне замовлення: 50 шт
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| AR0234CSSC28SUKA0-CP2 |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
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Мінімальне замовлення: 50 шт
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| AR0234CSSC00SUKA0-CP2 |
Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
товару немає в наявності
Мінімальне замовлення: 50 шт
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| AR0234CSSM00SUD20 |
Виробник: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
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| AR0234CSSC28SUD20 |
Виробник: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
товару немає в наявності
В кошику
од. на суму грн.
| AR0234CSSM28SUD20 |
Виробник: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
товару немає в наявності
В кошику
од. на суму грн.



























