| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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NCP51105ASNT1G | onsemi |
Description: SINGLE 2.6 A, LOW-SIDE GATE DRIVPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 12.7V ~ 25V Input Type: Non-Inverting Supplier Device Package: 6-TSOP Rise / Fall Time (Typ): 5ns, 5ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.2V, 1.9V Current - Peak Output (Source, Sink): 2.6A, 2.6A |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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NCP51105ASNT1G | onsemi |
Description: SINGLE 2.6 A, LOW-SIDE GATE DRIVPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 12.7V ~ 25V Input Type: Non-Inverting Supplier Device Package: 6-TSOP Rise / Fall Time (Typ): 5ns, 5ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.2V, 1.9V Current - Peak Output (Source, Sink): 2.6A, 2.6A |
на замовлення 38963 шт: термін постачання 21-31 дні (днів) |
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NCP511SN18T1G | onsemi |
Description: IC REG 150MA 1.8V LDO ENAB 5TSOPCurrent - Supply (Max): 100 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.2V @ 100mA PSRR: 50dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 1.8V Supplier Device Package: 5-TSOP Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 40 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Bulk |
на замовлення 594000 шт: термін постачання 21-31 дні (днів) |
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NCP511SN25T1G | onsemi |
Description: IC REG LINEAR 2.5V 150MA 5TSOPCurrent - Supply (Max): 100 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.2V @ 100mA PSRR: 50dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 2.5V Supplier Device Package: 5-TSOP Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 40 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Bulk |
на замовлення 399240 шт: термін постачання 21-31 дні (днів) |
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NCP51152BADR2G | onsemi |
Description: ISOLATED SINGLE CHANNEL GATE DRIVoltage - Output Supply: 9.5V ~ 30V Number of Channels: 1 Pulse Width Distortion (Max): 5ns Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Common Mode Transient Immunity (Min): 200kV/µs Rise / Fall Time (Typ): 12ns, 8.3ns Supplier Device Package: 8-SOIC Approval Agency: CQC, UL, VDE Voltage - Isolation: 3750Vrms Current - Output High, Low: 4.5A, 9A Technology: Capacitive Coupling Current - Peak Output: 4.5A, 9A Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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NCP51152BADR2G | onsemi |
Description: ISOLATED SINGLE CHANNEL GATE DRIVoltage - Output Supply: 9.5V ~ 30V Number of Channels: 1 Pulse Width Distortion (Max): 5ns Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Common Mode Transient Immunity (Min): 200kV/µs Rise / Fall Time (Typ): 12ns, 8.3ns Supplier Device Package: 8-SOIC Approval Agency: CQC, UL, VDE Voltage - Isolation: 3750Vrms Current - Output High, Low: 4.5A, 9A Technology: Capacitive Coupling Current - Peak Output: 4.5A, 9A Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP51152CADR2G | onsemi |
Description: 3.75 KVRMS, 4.5-A/9-A ISOLATED SVoltage - Output Supply: 9.5V ~ 30V Number of Channels: 1 Pulse Width Distortion (Max): 5ns Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Common Mode Transient Immunity (Min): 200kV/µs Rise / Fall Time (Typ): 12ns, 8.3ns Supplier Device Package: 8-SOIC Approval Agency: CQC, UL, VDE Voltage - Isolation: 3750Vrms Current - Output High, Low: 4.5A, 9A Technology: Capacitive Coupling Current - Peak Output: 4.5A, 9A Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 1V5KE56A | onsemi |
Description: TVS DIODE 47.8VWM 77VC DO201AEPackaging: Bulk Package / Case: DO-201AE, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 19.5A Voltage - Reverse Standoff (Typ): 47.8V Supplier Device Package: DO-201AE Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.2V Voltage - Clamping (Max) @ Ipp: 77V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NLVACT573DWR2G | onsemi |
Description: IC D-TYPE TRANSP SGL 8:8 20SOICPackaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Delay Time - Propagation: 3ns Supplier Device Package: 20-SOIC |
на замовлення 23768 шт: термін постачання 21-31 дні (днів) |
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FCAS20DN60BB | onsemi |
Description: MODULE SPM FOR SRM 600V SPM20-BCPackaging: Tube Package / Case: 20-PowerSIP Module, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 2 Phase Voltage - Isolation: 1500Vrms Current: 20 A Voltage: 600 V |
товару немає в наявності |
Мінімальне замовлення: 66 шт В кошику од. на суму грн. | ||||||||||||||
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FCAS30DN60BB | onsemi |
Description: MODULE SPM FOR SRM 600V SPM20-BCPackaging: Tube Package / Case: 20-PowerSIP Module, Formed Leads Mounting Type: Through Hole |
товару немає в наявності |
Мінімальне замовлення: 66 шт В кошику од. на суму грн. | ||||||||||||||
| STK5MFU3C1A-E | onsemi |
Description: MOD IPM 30A 600V 2-IN-1 23SIPPackaging: Tube Package / Case: 28-PowerSIP Module, 23 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Current: 53 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NTB5D0N15MC | onsemi |
Description: MOSFET - N-CHANNEL SHIELDED GATEInput Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 532µA Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 97A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 139A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NTB5D0N15MC | onsemi |
Description: MOSFET - N-CHANNEL SHIELDED GATEInput Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 532µA Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 97A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 139A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1302 шт: термін постачання 21-31 дні (днів) |
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| AR0543CSSC25SMKA0-CR | onsemi |
Description: IMAGE SENSORPackaging: Tray Package / Case: 54-WFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.15V ~ 1.25V Pixel Size: 1.4µm x 1.4µm Active Pixel Array: 2592H x 1944V Supplier Device Package: 54-ODCSP (5.26x5.07) Frames per Second: 15.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SBT250-04Y-DL-E | onsemi |
Description: DIODE ARRAY SCHOT 40V 25A SMP-FDPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 25A Supplier Device Package: SMP-FD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SN74LS299N | onsemi |
Description: SHIFT REGISTER SINGLE 8-BITPackaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Output Type: Tri-State Mounting Type: Through Hole Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Supplier Device Package: 20-PDIP Number of Bits per Element: 8 |
на замовлення 22267 шт: термін постачання 21-31 дні (днів) |
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FDD2512 | onsemi |
Description: MOSFET N-CH 150V 6.7A TO252Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 42W (Ta) Rds On (Max) @ Id, Vgs: 420mOhm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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FDD2612 | onsemi |
Description: MOSFET N-CH 200V 4.9A TO252Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 42W (Ta) Rds On (Max) @ Id, Vgs: 720mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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FDD20AN06A0-F085 | onsemi |
Description: MOSFET N-CH 60V 8A/45A TO252AAQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDD2570 | onsemi |
Description: MOSFET N-CH 150V 4.7A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.7A, 10V Power Dissipation (Max): 3.2W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1907 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FQP5N50C | onsemi |
Description: MOSFET N-CH 500V 5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| HLMP1719MP4B | onsemi |
Description: LED CBI 3MM YELLOW DIFF RAPackaging: Bulk Current: 2mA Color: Yellow Voltage Rating: 1.9V Mounting Type: Through Hole, Right Angle Millicandela Rating: 2.1mcd Configuration: Single Viewing Angle: 50° Lens Type: Diffused, Tinted Wavelength - Peak: 585nm Lens Style: Round with Domed Top Lens Size: 3mm, T-1 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
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SMBT3906DW3T1G | onsemi |
Description: TRANS 2PNP 40V 200MA SC88/SC70Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SC-88/SC70-6/SOT-363 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 200mA Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 2 PNP Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBD352LT3G | onsemi |
Description: RF DIODE STANDAR 7V 225MW SOT-23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Standard - 1 Pair Series Connection Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 1pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Supplier Device Package: SOT-23-3 (TO-236) Power Dissipation (Max): 225 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDH5500 | onsemi |
Description: MOSFET N-CH 55V 75A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3565 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||||
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NTLGF3501NT1G | onsemi |
Description: MOSFET N-CH 20V 2.8A 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTLGF3501NT2G | onsemi |
Description: MOSFET N-CH 20V 2.8A 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FPDB30PH60 | onsemi |
Description: IGBT IPM 600V 20A 27-PWRDIP MODPackaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 2 Phase Voltage - Isolation: 2500Vrms Current: 20 A Voltage: 600 V |
на замовлення 138 шт: термін постачання 21-31 дні (днів) |
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FPDB30PH60 | onsemi |
Description: IGBT IPM 600V 20A 27-PWRDIP MODPackaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 2 Phase Voltage - Isolation: 2500Vrms Current: 20 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FQP4N20L | onsemi |
Description: MOSFET N-CH 200V 3.8A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.9A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V |
на замовлення 65 шт: термін постачання 21-31 дні (днів) |
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MJW18020 | onsemi |
Description: TRANS NPN 450V 30A TO-247-3Power - Max: 250 W Voltage - Collector Emitter Breakdown (Max): 450 V Current - Collector (Ic) (Max): 30 A Supplier Device Package: TO-247-3 Frequency - Transition: 13MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 3A, 5V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4A, 20A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC100H603FN | onsemi |
Description: IC TRANSLATOR UNIDIR 28PLCCPackaging: Tube Package / Case: 28-LCC (J-Lead) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: 0°C ~ 85°C (TA) Supplier Device Package: 28-PLCC (11.51x11.51) Channel Type: Unidirectional Output Signal: TTL Translator Type: Mixed Signal Channels per Circuit: 9 Input Signal: ECL Number of Circuits: 1 |
на замовлення 1679 шт: термін постачання 21-31 дні (днів) |
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MC100H603FNG | onsemi |
Description: IC TRANSLATOR UNIDIR 28PLCCPackaging: Tube Package / Case: 28-LCC (J-Lead) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: 0°C ~ 85°C (TA) Supplier Device Package: 28-PLCC (11.51x11.51) Channel Type: Unidirectional Output Signal: TTL Translator Type: Mixed Signal Channels per Circuit: 9 Input Signal: ECL Number of Circuits: 1 |
на замовлення 481 шт: термін постачання 21-31 дні (днів) |
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| NVCR8LS4D1N15MCA | onsemi |
Description: POWER MOSFET, N-CHANNEL, 150 V,Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tj) Vgs(th) (Max) @ Id: 4.5V @ 584µA Supplier Device Package: Wafer Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 90.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 75 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PRISM1-ADPTR-NVDM1-GEVK | onsemi |
Description: PRISM MODULE TO RASPBERRY NVIDIA Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FAN48630BUC315X | onsemi |
Description: IC REG BOOST PROG 1.5A 16WLCSPVoltage - Output (Min/Fixed): 3.15V, 3.33V Voltage - Input (Min): 2.35V Synchronous Rectifier: Yes Supplier Device Package: 16-WLCSP (1.78x1.78) Topology: Boost Voltage - Input (Max): 5.5V Frequency - Switching: 2.5MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 1.5A (Switch) Function: Step-Up Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable Package / Case: 16-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN48630BUC315X | onsemi |
Description: IC REG BOOST PROG 1.5A 16WLCSPVoltage - Output (Min/Fixed): 3.15V, 3.33V Voltage - Input (Min): 2.35V Synchronous Rectifier: Yes Supplier Device Package: 16-WLCSP (1.78x1.78) Topology: Boost Voltage - Input (Max): 5.5V Frequency - Switching: 2.5MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 1.5A (Switch) Function: Step-Up Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable Package / Case: 16-UFBGA, WLCSP Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FAN48630BUC31JX | onsemi |
Description: IC REG BOOST PROG 1.5A 16WLCSPVoltage - Input (Min): 2.35V Synchronous Rectifier: Yes Supplier Device Package: 16-WLCSP Topology: Boost Voltage - Input (Max): 5.5V Frequency - Switching: 2.5MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 1.5A (Switch) Function: Step-Up Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| FAN48630BUC31JX | onsemi |
Description: IC REG BOOST PROG 1.5A 16WLCSPVoltage - Input (Min): 2.35V Synchronous Rectifier: Yes Supplier Device Package: 16-WLCSP Topology: Boost Voltage - Input (Max): 5.5V Frequency - Switching: 2.5MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 1.5A (Switch) Function: Step-Up Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MM74HC08SJX | onsemi |
Description: IC GATE AND 4CH 2-INP 14SOPCurrent - Quiescent (Max): 2 µA Number of Circuits: 4 Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF Input Logic Level - Low: 0.5V ~ 1.8V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: 14-SOP Number of Inputs: 2 Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: AND Gate Mounting Type: Surface Mount Package / Case: 14-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MM74HC08SJX | onsemi |
Description: IC GATE AND 4CH 2-INP 14SOPCurrent - Quiescent (Max): 2 µA Number of Circuits: 4 Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF Input Logic Level - Low: 0.5V ~ 1.8V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: 14-SOP Number of Inputs: 2 Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: AND Gate Mounting Type: Surface Mount Package / Case: 14-SOIC (0.209", 5.30mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NL17SH00P5T5G | onsemi |
Description: IC GATE NAND 1CH 2-INP SOT953Current - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Input Logic Level - Low: 0.5V ~ 1.65V Input Logic Level - High: 1.5V ~ 3.85V Supplier Device Package: SOT-953 Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: SOT-953 Packaging: Bulk |
на замовлення 200000 шт: термін постачання 21-31 дні (днів) |
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SMBZ1477LT1G | onsemi |
Description: DIODE ZENER .225W SPCL SOT23 Packaging: Bulk |
на замовлення 96000 шт: термін постачання 21-31 дні (днів) |
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SMBZ1477LT1 | onsemi |
Description: DIODE ZENER .225W SOT23 SPCL Packaging: Bulk |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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| SMBZ1477LT3 | onsemi |
Description: DIODE ZENER .225W SOT23 SPCL Packaging: Bulk |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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MBRD360T4 | onsemi |
Description: DIODE SCHOTTKY 60V 3A DPAKCurrent - Reverse Leakage @ Vr: 200 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Supplier Device Package: DPAK Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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N24RF64DTPT3G | onsemi |
Description: IC RFID TRANSP 13.56MHZ 8TSSOPSupplier Device Package: 8-TSSOP Standards: ISO 15693, ISO 18000-3, NFC Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Type: RFID Transponder Interface: I2C Frequency: 13.56MHz Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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N24RF64DTPT3G | onsemi |
Description: IC RFID TRANSP 13.56MHZ 8TSSOPSupplier Device Package: 8-TSSOP Standards: ISO 15693, ISO 18000-3, NFC Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Type: RFID Transponder Interface: I2C Frequency: 13.56MHz Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 2930 шт: термін постачання 21-31 дні (днів) |
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BZX79C22 | onsemi |
Description: DIODE ZENER 22V 500MW DO35Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Power - Max: 500 mW Supplier Device Package: DO-35 Impedance (Max) (Zzt): 55 Ohms Voltage - Zener (Nom) (Vz): 22 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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NTMFD5C674NLT1G | onsemi |
Description: MOSFET 2N-CH 60V 11A 8DFNSupplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 3W (Ta), 37W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NTMFD5C674NLT1G | onsemi |
Description: MOSFET 2N-CH 60V 11A 8DFNSupplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 3W (Ta), 37W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 1835 шт: термін постачання 21-31 дні (днів) |
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NVMFD6H840NLWFT1G | onsemi |
Description: MOSFET 2N-CH 80V 14A 8DFNQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2V @ 96µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc) Drain to Source Voltage (Vdss): 80V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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NVMFD6H840NLWFT1G | onsemi |
Description: MOSFET 2N-CH 80V 14A 8DFNQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2V @ 96µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc) Drain to Source Voltage (Vdss): 80V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFS6H858NLT1G | onsemi |
Description: T8 80V LL SO8FLInput Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 30µA Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NTMFS6H858NLT1G | onsemi |
Description: T8 80V LL SO8FLInput Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 30µA Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 2188 шт: термін постачання 21-31 дні (днів) |
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SZMMSZ5245BT3 | onsemi |
Description: DIODE ZENER 15V 500MW SOD123Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 11 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Grade: Automotive Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 16 Ohms Voltage - Zener (Nom) (Vz): 15 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74ACT138SJX | onsemi |
Description: IC DECODER/DEMUX 1 X 3:8 16-SOPSupplier Device Package: 16-SOP Voltage Supply Source: Single Supply Current - Output High, Low: 24mA, 24mA Independent Circuits: 1 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Decoder/Demultiplexer Circuit: 1 x 3:8 Mounting Type: Surface Mount Package / Case: 16-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74ACT138SJX | onsemi |
Description: IC DECODER/DEMUX 1 X 3:8 16-SOPSupplier Device Package: 16-SOP Voltage Supply Source: Single Supply Current - Output High, Low: 24mA, 24mA Independent Circuits: 1 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Decoder/Demultiplexer Circuit: 1 x 3:8 Mounting Type: Surface Mount Package / Case: 16-SOIC (0.209", 5.30mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74ACT138PC | onsemi |
Description: IC DECODER/DEMUX 1 X 3:8 16-PDIPSupplier Device Package: 16-PDIP Voltage Supply Source: Single Supply Current - Output High, Low: 24mA, 24mA Independent Circuits: 1 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Decoder/Demultiplexer Circuit: 1 x 3:8 Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| NCP51105ASNT1G |
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Виробник: onsemi
Description: SINGLE 2.6 A, LOW-SIDE GATE DRIV
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 6-TSOP
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Description: SINGLE 2.6 A, LOW-SIDE GATE DRIV
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 6-TSOP
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 29.75 грн |
| 6000+ | 27.97 грн |
| 9000+ | 27.63 грн |
| 15000+ | 25.58 грн |
| 21000+ | 25.37 грн |
| NCP51105ASNT1G |
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Виробник: onsemi
Description: SINGLE 2.6 A, LOW-SIDE GATE DRIV
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 6-TSOP
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Description: SINGLE 2.6 A, LOW-SIDE GATE DRIV
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 6-TSOP
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
на замовлення 38963 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.49 грн |
| 10+ | 43.85 грн |
| 25+ | 39.52 грн |
| 100+ | 32.65 грн |
| 250+ | 30.53 грн |
| 500+ | 29.24 грн |
| 1000+ | 27.73 грн |
| NCP511SN18T1G |
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Виробник: onsemi
Description: IC REG 150MA 1.8V LDO ENAB 5TSOP
Current - Supply (Max): 100 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 100mA
PSRR: 50dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 5-TSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Bulk
Description: IC REG 150MA 1.8V LDO ENAB 5TSOP
Current - Supply (Max): 100 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 100mA
PSRR: 50dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 5-TSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Bulk
на замовлення 594000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1212+ | 18.66 грн |
| NCP511SN25T1G |
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Виробник: onsemi
Description: IC REG LINEAR 2.5V 150MA 5TSOP
Current - Supply (Max): 100 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 100mA
PSRR: 50dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 5-TSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Bulk
Description: IC REG LINEAR 2.5V 150MA 5TSOP
Current - Supply (Max): 100 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 100mA
PSRR: 50dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 5-TSOP
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Bulk
на замовлення 399240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1212+ | 18.66 грн |
| NCP51152BADR2G |
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Виробник: onsemi
Description: ISOLATED SINGLE CHANNEL GATE DRI
Voltage - Output Supply: 9.5V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 5ns
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Common Mode Transient Immunity (Min): 200kV/µs
Rise / Fall Time (Typ): 12ns, 8.3ns
Supplier Device Package: 8-SOIC
Approval Agency: CQC, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4.5A, 9A
Technology: Capacitive Coupling
Current - Peak Output: 4.5A, 9A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: ISOLATED SINGLE CHANNEL GATE DRI
Voltage - Output Supply: 9.5V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 5ns
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Common Mode Transient Immunity (Min): 200kV/µs
Rise / Fall Time (Typ): 12ns, 8.3ns
Supplier Device Package: 8-SOIC
Approval Agency: CQC, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4.5A, 9A
Technology: Capacitive Coupling
Current - Peak Output: 4.5A, 9A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| NCP51152BADR2G |
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Виробник: onsemi
Description: ISOLATED SINGLE CHANNEL GATE DRI
Voltage - Output Supply: 9.5V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 5ns
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Common Mode Transient Immunity (Min): 200kV/µs
Rise / Fall Time (Typ): 12ns, 8.3ns
Supplier Device Package: 8-SOIC
Approval Agency: CQC, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4.5A, 9A
Technology: Capacitive Coupling
Current - Peak Output: 4.5A, 9A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: ISOLATED SINGLE CHANNEL GATE DRI
Voltage - Output Supply: 9.5V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 5ns
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Common Mode Transient Immunity (Min): 200kV/µs
Rise / Fall Time (Typ): 12ns, 8.3ns
Supplier Device Package: 8-SOIC
Approval Agency: CQC, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4.5A, 9A
Technology: Capacitive Coupling
Current - Peak Output: 4.5A, 9A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| NCP51152CADR2G |
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Виробник: onsemi
Description: 3.75 KVRMS, 4.5-A/9-A ISOLATED S
Voltage - Output Supply: 9.5V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 5ns
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Common Mode Transient Immunity (Min): 200kV/µs
Rise / Fall Time (Typ): 12ns, 8.3ns
Supplier Device Package: 8-SOIC
Approval Agency: CQC, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4.5A, 9A
Technology: Capacitive Coupling
Current - Peak Output: 4.5A, 9A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: 3.75 KVRMS, 4.5-A/9-A ISOLATED S
Voltage - Output Supply: 9.5V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 5ns
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Common Mode Transient Immunity (Min): 200kV/µs
Rise / Fall Time (Typ): 12ns, 8.3ns
Supplier Device Package: 8-SOIC
Approval Agency: CQC, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4.5A, 9A
Technology: Capacitive Coupling
Current - Peak Output: 4.5A, 9A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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| 1V5KE56A |
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Виробник: onsemi
Description: TVS DIODE 47.8VWM 77VC DO201AE
Packaging: Bulk
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-201AE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 47.8VWM 77VC DO201AE
Packaging: Bulk
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-201AE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| NLVACT573DWR2G |
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Виробник: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 3ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 3ns
Supplier Device Package: 20-SOIC
на замовлення 23768 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 666+ | 33.58 грн |
| FCAS20DN60BB |
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Виробник: onsemi
Description: MODULE SPM FOR SRM 600V SPM20-BC
Packaging: Tube
Package / Case: 20-PowerSIP Module, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 1500Vrms
Current: 20 A
Voltage: 600 V
Description: MODULE SPM FOR SRM 600V SPM20-BC
Packaging: Tube
Package / Case: 20-PowerSIP Module, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 1500Vrms
Current: 20 A
Voltage: 600 V
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| FCAS30DN60BB |
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Виробник: onsemi
Description: MODULE SPM FOR SRM 600V SPM20-BC
Packaging: Tube
Package / Case: 20-PowerSIP Module, Formed Leads
Mounting Type: Through Hole
Description: MODULE SPM FOR SRM 600V SPM20-BC
Packaging: Tube
Package / Case: 20-PowerSIP Module, Formed Leads
Mounting Type: Through Hole
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| STK5MFU3C1A-E |
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Виробник: onsemi
Description: MOD IPM 30A 600V 2-IN-1 23SIP
Packaging: Tube
Package / Case: 28-PowerSIP Module, 23 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 53 A
Voltage: 600 V
Description: MOD IPM 30A 600V 2-IN-1 23SIP
Packaging: Tube
Package / Case: 28-PowerSIP Module, 23 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 53 A
Voltage: 600 V
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| NTB5D0N15MC |
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Виробник: onsemi
Description: MOSFET - N-CHANNEL SHIELDED GATE
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 532µA
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 97A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 139A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET - N-CHANNEL SHIELDED GATE
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 532µA
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 97A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 139A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 189.24 грн |
| NTB5D0N15MC |
![]() |
Виробник: onsemi
Description: MOSFET - N-CHANNEL SHIELDED GATE
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 532µA
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 97A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 139A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET - N-CHANNEL SHIELDED GATE
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 532µA
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 97A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 139A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1302 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 396.61 грн |
| 10+ | 271.27 грн |
| 100+ | 202.67 грн |
| AR0543CSSC25SMKA0-CR |
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Виробник: onsemi
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 54-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.15V ~ 1.25V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 54-ODCSP (5.26x5.07)
Frames per Second: 15.0
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 54-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.15V ~ 1.25V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 54-ODCSP (5.26x5.07)
Frames per Second: 15.0
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| SBT250-04Y-DL-E |
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Виробник: onsemi
Description: DIODE ARRAY SCHOT 40V 25A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: SMP-FD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 20 V
Description: DIODE ARRAY SCHOT 40V 25A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: SMP-FD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 20 V
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| SN74LS299N |
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Виробник: onsemi
Description: SHIFT REGISTER SINGLE 8-BIT
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 20-PDIP
Number of Bits per Element: 8
Description: SHIFT REGISTER SINGLE 8-BIT
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 20-PDIP
Number of Bits per Element: 8
на замовлення 22267 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 81+ | 279.48 грн |
| FDD2512 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 6.7A TO252
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 150V 6.7A TO252
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| FDD2612 |
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Виробник: onsemi
Description: MOSFET N-CH 200V 4.9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 42W (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 200V 4.9A TO252
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 42W (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| FDD20AN06A0-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 8A/45A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 8A/45A TO252AA
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| FDD2570 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 4.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.7A, 10V
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1907 pF @ 75 V
Description: MOSFET N-CH 150V 4.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.7A, 10V
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1907 pF @ 75 V
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| FQP5N50C |
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Виробник: onsemi
Description: MOSFET N-CH 500V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 500V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
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| HLMP1719MP4B |
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Виробник: onsemi
Description: LED CBI 3MM YELLOW DIFF RA
Packaging: Bulk
Current: 2mA
Color: Yellow
Voltage Rating: 1.9V
Mounting Type: Through Hole, Right Angle
Millicandela Rating: 2.1mcd
Configuration: Single
Viewing Angle: 50°
Lens Type: Diffused, Tinted
Wavelength - Peak: 585nm
Lens Style: Round with Domed Top
Lens Size: 3mm, T-1
Description: LED CBI 3MM YELLOW DIFF RA
Packaging: Bulk
Current: 2mA
Color: Yellow
Voltage Rating: 1.9V
Mounting Type: Through Hole, Right Angle
Millicandela Rating: 2.1mcd
Configuration: Single
Viewing Angle: 50°
Lens Type: Diffused, Tinted
Wavelength - Peak: 585nm
Lens Style: Round with Domed Top
Lens Size: 3mm, T-1
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Мінімальне замовлення: 5000 шт
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| SMBT3906DW3T1G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP 40V 200MA SC88/SC70
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Bulk
Description: TRANS 2PNP 40V 200MA SC88/SC70
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Bulk
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| MMBD352LT3G |
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Виробник: onsemi
Description: RF DIODE STANDAR 7V 225MW SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Standard - 1 Pair Series Connection
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 225 mW
Description: RF DIODE STANDAR 7V 225MW SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Standard - 1 Pair Series Connection
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 225 mW
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| FDH5500 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 55V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3565 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3565 pF @ 25 V
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| NTLGF3501NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 20V 2.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V
Description: MOSFET N-CH 20V 2.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V
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| NTLGF3501NT2G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 20V 2.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V
Description: MOSFET N-CH 20V 2.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V
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| FPDB30PH60 |
![]() |
Виробник: onsemi
Description: IGBT IPM 600V 20A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
Description: IGBT IPM 600V 20A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
на замовлення 138 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 2203.83 грн |
| FPDB30PH60 |
![]() |
Виробник: onsemi
Description: IGBT IPM 600V 20A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
Description: IGBT IPM 600V 20A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
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| FQP4N20L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 200V 3.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.9A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Description: MOSFET N-CH 200V 3.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.9A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.90 грн |
| 50+ | 60.05 грн |
| MJW18020 |
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Виробник: onsemi
Description: TRANS NPN 450V 30A TO-247-3
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 30 A
Supplier Device Package: TO-247-3
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 3A, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4A, 20A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: TRANS NPN 450V 30A TO-247-3
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 30 A
Supplier Device Package: TO-247-3
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 3A, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4A, 20A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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| MC100H603FN |
![]() |
Виробник: onsemi
Description: IC TRANSLATOR UNIDIR 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Supplier Device Package: 28-PLCC (11.51x11.51)
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 9
Input Signal: ECL
Number of Circuits: 1
Description: IC TRANSLATOR UNIDIR 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Supplier Device Package: 28-PLCC (11.51x11.51)
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 9
Input Signal: ECL
Number of Circuits: 1
на замовлення 1679 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 302.27 грн |
| MC100H603FNG |
![]() |
Виробник: onsemi
Description: IC TRANSLATOR UNIDIR 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Supplier Device Package: 28-PLCC (11.51x11.51)
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 9
Input Signal: ECL
Number of Circuits: 1
Description: IC TRANSLATOR UNIDIR 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Supplier Device Package: 28-PLCC (11.51x11.51)
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 9
Input Signal: ECL
Number of Circuits: 1
на замовлення 481 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 38+ | 603.81 грн |
| NVCR8LS4D1N15MCA |
![]() |
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, 150 V,
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 584µA
Supplier Device Package: Wafer
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 75 V
Qualification: AEC-Q101
Description: POWER MOSFET, N-CHANNEL, 150 V,
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 584µA
Supplier Device Package: Wafer
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 75 V
Qualification: AEC-Q101
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| FAN48630BUC315X |
![]() |
Виробник: onsemi
Description: IC REG BOOST PROG 1.5A 16WLCSP
Voltage - Output (Min/Fixed): 3.15V, 3.33V
Voltage - Input (Min): 2.35V
Synchronous Rectifier: Yes
Supplier Device Package: 16-WLCSP (1.78x1.78)
Topology: Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 1.5A (Switch)
Function: Step-Up
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 16-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC REG BOOST PROG 1.5A 16WLCSP
Voltage - Output (Min/Fixed): 3.15V, 3.33V
Voltage - Input (Min): 2.35V
Synchronous Rectifier: Yes
Supplier Device Package: 16-WLCSP (1.78x1.78)
Topology: Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 1.5A (Switch)
Function: Step-Up
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 16-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
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| FAN48630BUC315X |
![]() |
Виробник: onsemi
Description: IC REG BOOST PROG 1.5A 16WLCSP
Voltage - Output (Min/Fixed): 3.15V, 3.33V
Voltage - Input (Min): 2.35V
Synchronous Rectifier: Yes
Supplier Device Package: 16-WLCSP (1.78x1.78)
Topology: Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 1.5A (Switch)
Function: Step-Up
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 16-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG BOOST PROG 1.5A 16WLCSP
Voltage - Output (Min/Fixed): 3.15V, 3.33V
Voltage - Input (Min): 2.35V
Synchronous Rectifier: Yes
Supplier Device Package: 16-WLCSP (1.78x1.78)
Topology: Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 1.5A (Switch)
Function: Step-Up
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 16-UFBGA, WLCSP
Packaging: Cut Tape (CT)
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| FAN48630BUC31JX |
![]() |
Виробник: onsemi
Description: IC REG BOOST PROG 1.5A 16WLCSP
Voltage - Input (Min): 2.35V
Synchronous Rectifier: Yes
Supplier Device Package: 16-WLCSP
Topology: Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 1.5A (Switch)
Function: Step-Up
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Packaging: Tape & Reel (TR)
Description: IC REG BOOST PROG 1.5A 16WLCSP
Voltage - Input (Min): 2.35V
Synchronous Rectifier: Yes
Supplier Device Package: 16-WLCSP
Topology: Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 1.5A (Switch)
Function: Step-Up
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| FAN48630BUC31JX |
![]() |
Виробник: onsemi
Description: IC REG BOOST PROG 1.5A 16WLCSP
Voltage - Input (Min): 2.35V
Synchronous Rectifier: Yes
Supplier Device Package: 16-WLCSP
Topology: Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 1.5A (Switch)
Function: Step-Up
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Packaging: Cut Tape (CT)
Description: IC REG BOOST PROG 1.5A 16WLCSP
Voltage - Input (Min): 2.35V
Synchronous Rectifier: Yes
Supplier Device Package: 16-WLCSP
Topology: Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 1.5A (Switch)
Function: Step-Up
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Packaging: Cut Tape (CT)
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| MM74HC08SJX |
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Виробник: onsemi
Description: IC GATE AND 4CH 2-INP 14SOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-SOP
Number of Inputs: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE AND 4CH 2-INP 14SOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-SOP
Number of Inputs: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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| MM74HC08SJX |
![]() |
Виробник: onsemi
Description: IC GATE AND 4CH 2-INP 14SOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-SOP
Number of Inputs: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE AND 4CH 2-INP 14SOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-SOP
Number of Inputs: 2
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
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| NL17SH00P5T5G |
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Виробник: onsemi
Description: IC GATE NAND 1CH 2-INP SOT953
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V ~ 1.65V
Input Logic Level - High: 1.5V ~ 3.85V
Supplier Device Package: SOT-953
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Bulk
Description: IC GATE NAND 1CH 2-INP SOT953
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V ~ 1.65V
Input Logic Level - High: 1.5V ~ 3.85V
Supplier Device Package: SOT-953
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Bulk
на замовлення 200000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5657+ | 3.73 грн |
| SMBZ1477LT1G |
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11539+ | 2.24 грн |
| SMBZ1477LT1 |
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11539+ | 2.24 грн |
| SMBZ1477LT3 |
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11539+ | 2.24 грн |
| MBRD360T4 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A DPAK
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Supplier Device Package: DPAK
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 3A DPAK
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Supplier Device Package: DPAK
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| N24RF64DTPT3G |
![]() |
Виробник: onsemi
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Supplier Device Package: 8-TSSOP
Standards: ISO 15693, ISO 18000-3, NFC
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Type: RFID Transponder
Interface: I2C
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Supplier Device Package: 8-TSSOP
Standards: ISO 15693, ISO 18000-3, NFC
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Type: RFID Transponder
Interface: I2C
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| N24RF64DTPT3G |
![]() |
Виробник: onsemi
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Supplier Device Package: 8-TSSOP
Standards: ISO 15693, ISO 18000-3, NFC
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Type: RFID Transponder
Interface: I2C
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Supplier Device Package: 8-TSSOP
Standards: ISO 15693, ISO 18000-3, NFC
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Type: RFID Transponder
Interface: I2C
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 2930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.17 грн |
| 10+ | 79.18 грн |
| 25+ | 71.40 грн |
| 100+ | 57.80 грн |
| 250+ | 52.82 грн |
| 500+ | 49.56 грн |
| 1000+ | 45.92 грн |
| BZX79C22 |
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Виробник: onsemi
Description: DIODE ZENER 22V 500MW DO35
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 22V 500MW DO35
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
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Мінімальне замовлення: 1000 шт
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| NTMFD5C674NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 60V 11A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3W (Ta), 37W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 11A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3W (Ta), 37W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 23.44 грн |
| NTMFD5C674NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 60V 11A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3W (Ta), 37W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 11A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3W (Ta), 37W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 1835 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.65 грн |
| 10+ | 51.10 грн |
| 100+ | 33.69 грн |
| 500+ | 24.60 грн |
| NVMFD6H840NLWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 80V 14A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 96µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 80V 14A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 96µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1500 шт
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| NVMFD6H840NLWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 80V 14A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 96µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 80V 14A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 96µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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| NTMFS6H858NLT1G |
![]() |
Виробник: onsemi
Description: T8 80V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: T8 80V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 22.86 грн |
| NTMFS6H858NLT1G |
![]() |
Виробник: onsemi
Description: T8 80V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: T8 80V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 2188 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.92 грн |
| 10+ | 55.02 грн |
| 50+ | 40.83 грн |
| 100+ | 34.03 грн |
| 500+ | 26.46 грн |
| SZMMSZ5245BT3 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 15V 500MW SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 15V 500MW SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Bulk
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| 74ACT138SJX |
![]() |
Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 3:8 16-SOP
Supplier Device Package: 16-SOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 3:8
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC DECODER/DEMUX 1 X 3:8 16-SOP
Supplier Device Package: 16-SOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 3:8
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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| 74ACT138SJX |
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Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 3:8 16-SOP
Supplier Device Package: 16-SOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 3:8
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Description: IC DECODER/DEMUX 1 X 3:8 16-SOP
Supplier Device Package: 16-SOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 3:8
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 74ACT138PC |
![]() |
Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 3:8 16-PDIP
Supplier Device Package: 16-PDIP
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 3:8
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC DECODER/DEMUX 1 X 3:8 16-PDIP
Supplier Device Package: 16-PDIP
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Decoder/Demultiplexer
Circuit: 1 x 3:8
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.






























