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DM74AS169AM DM74AS169AM onsemi DM74AS169A.pdf Description: IC BINARY COUNTER 4-BIT 16SOIC
Number of Bits per Element: 4
Count Rate: 75 MHz
Voltage - Supply: 4.5 V ~ 5.5 V
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Timing: Synchronous
Trigger Type: Positive Edge
Direction: Up, Down
Operating Temperature: 0°C ~ 70°C
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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DM74AS169AMX DM74AS169AMX onsemi DM74AS169A.pdf Description: IC BINARY COUNTER 4-BIT 16SOIC
Number of Bits per Element: 4
Count Rate: 75 MHz
Voltage - Supply: 4.5 V ~ 5.5 V
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Timing: Synchronous
Trigger Type: Positive Edge
Direction: Up, Down
Operating Temperature: 0°C ~ 70°C
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DM74AS21MX DM74AS21MX onsemi DM74AS21.pdf Description: IC GATE AND 2CH 4-INP 14SOIC
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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DM74AS30M DM74AS30M onsemi DM74AS30.pdf Description: IC GATE NAND 1CH 8-INP 14SOIC
Packaging: Tube
Number of Inputs: 8
Current - Output High, Low: 2mA, 20mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-SOIC
товару немає в наявності
 Мінімальне замовлення: 1100 шт
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DM74AS32SJ DM74AS32SJ onsemi DM74AS32.pdf Description: IC GATE OR 4CH 2-INP 14SOP
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Tube
Number of Circuits: 4
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 5.8ns @ 5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-SOP
Number of Inputs: 2
Current - Output High, Low: 2mA, 20mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Logic Type: OR Gate
Mounting Type: Surface Mount
товару немає в наявності
 Мінімальне замовлення: 47 шт
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DM74AS32SJX DM74AS32SJX onsemi DM74AS32.pdf Description: IC GATE OR 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.8ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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DM74AS74SJ DM74AS74SJ onsemi DM74AS74.pdf Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 16 mA
Current - Output High, Low: 2mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 105 MHz
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Obsolete
Number of Bits per Element: 1
товару немає в наявності
 Мінімальне замовлення: 47 шт
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DM74AS74SJX DM74AS74SJX onsemi DM74AS74.pdf Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 16 mA
Current - Output High, Low: 2mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 105 MHz
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Obsolete
Number of Bits per Element: 1
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
FAN4800IN FAN4800IN onsemi FAN4800.pdf Description: IC PFC CTRLR CCM/DCM 84KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 66kHz ~ 84kHz
Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM)
Supplier Device Package: 16-PDIP
Part Status: Obsolete
Current - Startup: 100 µA
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FCA47N60 FCA47N60 onsemi fca47n60_f109-d.pdf Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
на замовлення 1625 шт:
термін постачання 21-31 дні (днів)
1+869.80 грн
30+507.76 грн
120+435.49 грн
510+394.63 грн
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FCPF11N60F FCPF11N60F onsemi FCPF11N60F-D.pdf Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
на замовлення 1948 шт:
термін постачання 21-31 дні (днів)
1+327.14 грн
50+163.07 грн
100+148.40 грн
500+115.14 грн
1000+107.39 грн
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FDD6630A FDD6630A onsemi fdd6630a-d.pdf Description: MOSFET N-CH 30V 21A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.6A, 10V
Power Dissipation (Max): 28W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 462 pF @ 15 V
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FDN304PZ FDN304PZ onsemi FDN304PZ-D.PDF Description: MOSFET P-CH 20V 2.4A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 10 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
3000+14.55 грн
6000+12.88 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDN342P FDN342P onsemi fdn342p-d.pdf Description: MOSFET P-CH 20V 2A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+16.02 грн
6000+14.18 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDN361AN FDN361AN onsemi FDN361AN.pdf Description: MOSFET N-CH 30V 1.8A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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FDS7764S FDS7764S onsemi FDS7764S.pdf description Description: MOSFET N-CH 30V 13.5A 8SOIC
Drain to Source Voltage (Vdss): 30 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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2N3904CBU 2N3904CBU onsemi 2N3904%2CMMBT3904%2CPZT3904.pdf Description: TRANS NPN 40V 0.2A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
2N3904NLBU 2N3904NLBU onsemi 2N3904%2CMMBT3904%2CPZT3904.pdf Description: TRANS NPN 40V 0.2A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
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2N3904TAR 2N3904TAR onsemi 2N3904-D.pdf Description: TRANS NPN 40V 0.2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2000+4.10 грн
4000+3.53 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N3904TF 2N3904TF onsemi 2N3904-D.pdf Description: TRANS NPN 40V 0.2A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
2000+4.10 грн
4000+3.53 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N3905TA 2N3905TA onsemi 2N3905.pdf Description: TRANS PNP 40V 0.2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N3906TA 2N3906TA onsemi 2N3906-D.PDF Description: TRANS PNP 40V 0.2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+3.83 грн
4000+3.29 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N3906TAR 2N3906TAR onsemi 2N3906-D.PDF Description: TRANS PNP 40V 0.2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
2000+3.97 грн
4000+3.42 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N3906TF 2N3906TF onsemi 2N3906-D.PDF Description: TRANS PNP 40V 0.2A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 34000 шт:
термін постачання 21-31 дні (днів)
2000+3.83 грн
4000+3.29 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N4123TA 2N4123TA onsemi 2N4123.pdf Description: TRANS NPN 30V 0.2A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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2N4123TF 2N4123TF onsemi 2N4123.pdf Description: TRANS NPN 30V 0.2A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N4123TFR 2N4123TFR onsemi 2N4123.pdf Description: TRANS NPN 30V 0.2A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
2N4124TA 2N4124TA onsemi 2N4124%2C%20MMBT4124.pdf Description: TRANS NPN 25V 0.2A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
2N4125TA 2N4125TA onsemi 2N4125.pdf Description: TRANS PNP 30V 0.2A TO-92-3
Packaging: Tape & Box (TB)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
товару немає в наявності
В кошику  од. на суму  грн.
2N4125TF 2N4125TF onsemi 2N4125.pdf Description: TRANS PNP 30V 0.2A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
2N4126TA 2N4126TA onsemi 2N4126_MMBT4126.pdf Description: TRANS PNP 25V 0.2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N4126TF 2N4126TF onsemi 2N4126_MMBT4126.pdf Description: TRANS PNP 25V 0.2A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
2N4401TA 2N4401TA onsemi MMBT4401-D.PDF Description: TRANS NPN 40V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
2000+4.01 грн
4000+3.46 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N4401TF 2N4401TF onsemi MMBT4401-D.PDF Description: TRANS NPN 40V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
2000+4.01 грн
4000+3.46 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N4402TA 2N4402TA onsemi DS_261_2N4402.pdf Description: TRANS PNP 40V 0.6A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
2N4403NLBU 2N4403NLBU onsemi DS_261_MMBT4403.pdf Description: TRANS PNP 40V 0.6A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
2N4403TA 2N4403TA onsemi 2N4403T.PDF Description: TRANS PNP 40V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
2000+4.17 грн
4000+3.59 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N4403TAR 2N4403TAR onsemi 2N4403T.PDF Description: TRANS PNP 40V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 52000 шт:
термін постачання 21-31 дні (днів)
2000+3.97 грн
4000+3.42 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N4403TF 2N4403TF onsemi 2N4403T.PDF Description: TRANS PNP 40V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+3.97 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N5087TA 2N5087TA onsemi 2N5086%2C%202N5087%2C%20MMBT5087.pdf Description: TRANS PNP 50V 0.1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5087TF 2N5087TF onsemi 2N5086%2C%202N5087%2C%20MMBT5087.pdf Description: TRANS PNP 50V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5087TFR 2N5087TFR onsemi 2N5086%2C%202N5087%2C%20MMBT5087.pdf Description: TRANS PNP 50V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5089TA 2N5089TA onsemi 2N5088%2C89%2CMMBT5088%2C89.pdf Description: TRANS NPN 25V 0.1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5089TF 2N5089TF onsemi 2N5088%2C89%2CMMBT5088%2C89.pdf Description: TRANS NPN 25V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5089TFR 2N5089TFR onsemi 2N5088%2C89%2CMMBT5088%2C89.pdf Description: TRANS NPN 25V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5210TFR 2N5210TFR onsemi 2N5210%2CMMBT5210.pdf Description: TRANS NPN 50V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5401CTA 2N5401CTA onsemi DS_261_2N5401.pdf Description: TRANS PNP 150V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5401CYTA 2N5401CYTA onsemi DS_261_2N5401.pdf Description: TRANS PNP 150V 0.6A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
2N5401NLBU 2N5401NLBU onsemi DS_261_2N5401.pdf Description: TRANS PNP 150V 0.6A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
2N5401TF 2N5401TF onsemi DS_261_2N5401.pdf Description: TRANS PNP 150V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5401TFR 2N5401TFR onsemi DS_261_2N5401.pdf Description: TRANS PNP 150V 0.6A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
2N5401YBU 2N5401YBU onsemi 2N5401-D.PDF Description: TRANS PNP 150V 0.6A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
на замовлення 32718 шт:
термін постачання 21-31 дні (днів)
16+19.24 грн
28+10.90 грн
100+6.82 грн
500+4.71 грн
1000+4.16 грн
2000+3.70 грн
5000+3.15 грн
10000+2.84 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
2N5550TFR 2N5550TFR onsemi 2N5550-D.PDF Description: TRANS NPN 140V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
2000+4.06 грн
4000+3.50 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N5551CBU 2N5551CBU onsemi 2n5551t-d.pdf Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
2N5551CTA 2N5551CTA onsemi 2n5551t-d.pdf Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N6517BU 2N6517BU onsemi 2N6517-D.PDF Description: TRANS NPN 350V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
на замовлення 2554 шт:
термін постачання 21-31 дні (днів)
13+24.63 грн
21+14.38 грн
100+9.05 грн
500+6.30 грн
1000+5.59 грн
2000+4.99 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
2N6517CBU 2N6517CBU onsemi 2n6515-d.pdf Description: TRANS NPN 400V 0.5A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
2N6517CTA 2N6517CTA onsemi 2n6515-d.pdf Description: TRANS NPN 400V 0.5A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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2N6517TA 2N6517TA onsemi 2N6517-D.PDF Description: TRANS NPN 350V 0.5A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2000+5.21 грн
4000+4.51 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N6519BU 2N6519BU onsemi 2N6519.pdf Description: TRANS PNP 300V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
товару немає в наявності
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DM74AS169AM DM74AS169A.pdf
DM74AS169AM
Виробник: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Number of Bits per Element: 4
Count Rate: 75 MHz
Voltage - Supply: 4.5 V ~ 5.5 V
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Timing: Synchronous
Trigger Type: Positive Edge
Direction: Up, Down
Operating Temperature: 0°C ~ 70°C
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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DM74AS169AMX DM74AS169A.pdf
DM74AS169AMX
Виробник: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Number of Bits per Element: 4
Count Rate: 75 MHz
Voltage - Supply: 4.5 V ~ 5.5 V
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Timing: Synchronous
Trigger Type: Positive Edge
Direction: Up, Down
Operating Temperature: 0°C ~ 70°C
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DM74AS21MX DM74AS21.pdf
DM74AS21MX
Виробник: onsemi
Description: IC GATE AND 2CH 4-INP 14SOIC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
DM74AS30M DM74AS30.pdf
DM74AS30M
Виробник: onsemi
Description: IC GATE NAND 1CH 8-INP 14SOIC
Packaging: Tube
Number of Inputs: 8
Current - Output High, Low: 2mA, 20mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-SOIC
товару немає в наявності
Мінімальне замовлення: 1100 шт
В кошику  од. на суму  грн.
DM74AS32SJ DM74AS32.pdf
DM74AS32SJ
Виробник: onsemi
Description: IC GATE OR 4CH 2-INP 14SOP
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Packaging: Tube
Number of Circuits: 4
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 5.8ns @ 5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-SOP
Number of Inputs: 2
Current - Output High, Low: 2mA, 20mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C
Logic Type: OR Gate
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 47 шт
В кошику  од. на суму  грн.
DM74AS32SJX DM74AS32.pdf
DM74AS32SJX
Виробник: onsemi
Description: IC GATE OR 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5.8ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 4
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
DM74AS74SJ DM74AS74.pdf
DM74AS74SJ
Виробник: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 16 mA
Current - Output High, Low: 2mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 105 MHz
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Obsolete
Number of Bits per Element: 1
товару немає в наявності
Мінімальне замовлення: 47 шт
В кошику  од. на суму  грн.
DM74AS74SJX DM74AS74.pdf
DM74AS74SJX
Виробник: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14-SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 16 mA
Current - Output High, Low: 2mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 105 MHz
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Obsolete
Number of Bits per Element: 1
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
FAN4800IN FAN4800.pdf
FAN4800IN
Виробник: onsemi
Description: IC PFC CTRLR CCM/DCM 84KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 66kHz ~ 84kHz
Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM)
Supplier Device Package: 16-PDIP
Part Status: Obsolete
Current - Startup: 100 µA
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FCA47N60 fca47n60_f109-d.pdf
FCA47N60
Виробник: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
на замовлення 1625 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+869.80 грн
30+507.76 грн
120+435.49 грн
510+394.63 грн
В кошику  од. на суму  грн.
FCPF11N60F FCPF11N60F-D.pdf
FCPF11N60F
Виробник: onsemi
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
на замовлення 1948 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+327.14 грн
50+163.07 грн
100+148.40 грн
500+115.14 грн
1000+107.39 грн
В кошику  од. на суму  грн.
FDD6630A fdd6630a-d.pdf
FDD6630A
Виробник: onsemi
Description: MOSFET N-CH 30V 21A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.6A, 10V
Power Dissipation (Max): 28W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 462 pF @ 15 V
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FDN304PZ FDN304PZ-D.PDF
FDN304PZ
Виробник: onsemi
Description: MOSFET P-CH 20V 2.4A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 10 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+14.55 грн
6000+12.88 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDN342P fdn342p-d.pdf
FDN342P
Виробник: onsemi
Description: MOSFET P-CH 20V 2A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+16.02 грн
6000+14.18 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDN361AN FDN361AN.pdf
FDN361AN
Виробник: onsemi
Description: MOSFET N-CH 30V 1.8A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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FDS7764S description FDS7764S.pdf
FDS7764S
Виробник: onsemi
Description: MOSFET N-CH 30V 13.5A 8SOIC
Drain to Source Voltage (Vdss): 30 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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2N3904CBU 2N3904%2CMMBT3904%2CPZT3904.pdf
2N3904CBU
Виробник: onsemi
Description: TRANS NPN 40V 0.2A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
2N3904NLBU 2N3904%2CMMBT3904%2CPZT3904.pdf
2N3904NLBU
Виробник: onsemi
Description: TRANS NPN 40V 0.2A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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2N3904TAR 2N3904-D.pdf
2N3904TAR
Виробник: onsemi
Description: TRANS NPN 40V 0.2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+4.10 грн
4000+3.53 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N3904TF 2N3904-D.pdf
2N3904TF
Виробник: onsemi
Description: TRANS NPN 40V 0.2A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+4.10 грн
4000+3.53 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N3905TA 2N3905.pdf
2N3905TA
Виробник: onsemi
Description: TRANS PNP 40V 0.2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N3906TA 2N3906-D.PDF
2N3906TA
Виробник: onsemi
Description: TRANS PNP 40V 0.2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+3.83 грн
4000+3.29 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N3906TAR 2N3906-D.PDF
2N3906TAR
Виробник: onsemi
Description: TRANS PNP 40V 0.2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+3.97 грн
4000+3.42 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N3906TF 2N3906-D.PDF
2N3906TF
Виробник: onsemi
Description: TRANS PNP 40V 0.2A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 34000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+3.83 грн
4000+3.29 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N4123TA 2N4123.pdf
2N4123TA
Виробник: onsemi
Description: TRANS NPN 30V 0.2A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
2N4123TF 2N4123.pdf
2N4123TF
Виробник: onsemi
Description: TRANS NPN 30V 0.2A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N4123TFR 2N4123.pdf
2N4123TFR
Виробник: onsemi
Description: TRANS NPN 30V 0.2A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
2N4124TA 2N4124%2C%20MMBT4124.pdf
2N4124TA
Виробник: onsemi
Description: TRANS NPN 25V 0.2A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
2N4125TA 2N4125.pdf
2N4125TA
Виробник: onsemi
Description: TRANS PNP 30V 0.2A TO-92-3
Packaging: Tape & Box (TB)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
товару немає в наявності
В кошику  од. на суму  грн.
2N4125TF 2N4125.pdf
2N4125TF
Виробник: onsemi
Description: TRANS PNP 30V 0.2A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
2N4126TA 2N4126_MMBT4126.pdf
2N4126TA
Виробник: onsemi
Description: TRANS PNP 25V 0.2A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N4126TF 2N4126_MMBT4126.pdf
2N4126TF
Виробник: onsemi
Description: TRANS PNP 25V 0.2A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
2N4401TA MMBT4401-D.PDF
2N4401TA
Виробник: onsemi
Description: TRANS NPN 40V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+4.01 грн
4000+3.46 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N4401TF MMBT4401-D.PDF
2N4401TF
Виробник: onsemi
Description: TRANS NPN 40V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+4.01 грн
4000+3.46 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N4402TA DS_261_2N4402.pdf
2N4402TA
Виробник: onsemi
Description: TRANS PNP 40V 0.6A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
2N4403NLBU DS_261_MMBT4403.pdf
2N4403NLBU
Виробник: onsemi
Description: TRANS PNP 40V 0.6A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
2N4403TA 2N4403T.PDF
2N4403TA
Виробник: onsemi
Description: TRANS PNP 40V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+4.17 грн
4000+3.59 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N4403TAR 2N4403T.PDF
2N4403TAR
Виробник: onsemi
Description: TRANS PNP 40V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 52000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+3.97 грн
4000+3.42 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N4403TF 2N4403T.PDF
2N4403TF
Виробник: onsemi
Description: TRANS PNP 40V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+3.97 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N5087TA 2N5086%2C%202N5087%2C%20MMBT5087.pdf
2N5087TA
Виробник: onsemi
Description: TRANS PNP 50V 0.1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5087TF 2N5086%2C%202N5087%2C%20MMBT5087.pdf
2N5087TF
Виробник: onsemi
Description: TRANS PNP 50V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5087TFR 2N5086%2C%202N5087%2C%20MMBT5087.pdf
2N5087TFR
Виробник: onsemi
Description: TRANS PNP 50V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5089TA 2N5088%2C89%2CMMBT5088%2C89.pdf
2N5089TA
Виробник: onsemi
Description: TRANS NPN 25V 0.1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5089TF 2N5088%2C89%2CMMBT5088%2C89.pdf
2N5089TF
Виробник: onsemi
Description: TRANS NPN 25V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5089TFR 2N5088%2C89%2CMMBT5088%2C89.pdf
2N5089TFR
Виробник: onsemi
Description: TRANS NPN 25V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5210TFR 2N5210%2CMMBT5210.pdf
2N5210TFR
Виробник: onsemi
Description: TRANS NPN 50V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5401CTA DS_261_2N5401.pdf
2N5401CTA
Виробник: onsemi
Description: TRANS PNP 150V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5401CYTA DS_261_2N5401.pdf
2N5401CYTA
Виробник: onsemi
Description: TRANS PNP 150V 0.6A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
2N5401NLBU DS_261_2N5401.pdf
2N5401NLBU
Виробник: onsemi
Description: TRANS PNP 150V 0.6A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
2N5401TF DS_261_2N5401.pdf
2N5401TF
Виробник: onsemi
Description: TRANS PNP 150V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N5401TFR DS_261_2N5401.pdf
2N5401TFR
Виробник: onsemi
Description: TRANS PNP 150V 0.6A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
2N5401YBU 2N5401-D.PDF
2N5401YBU
Виробник: onsemi
Description: TRANS PNP 150V 0.6A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
на замовлення 32718 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
16+19.24 грн
28+10.90 грн
100+6.82 грн
500+4.71 грн
1000+4.16 грн
2000+3.70 грн
5000+3.15 грн
10000+2.84 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
2N5550TFR 2N5550-D.PDF
2N5550TFR
Виробник: onsemi
Description: TRANS NPN 140V 0.6A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+4.06 грн
4000+3.50 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N5551CBU 2n5551t-d.pdf
2N5551CBU
Виробник: onsemi
Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
2N5551CTA 2n5551t-d.pdf
2N5551CTA
Виробник: onsemi
Description: TRANS NPN 160V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N6517BU 2N6517-D.PDF
2N6517BU
Виробник: onsemi
Description: TRANS NPN 350V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
на замовлення 2554 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
13+24.63 грн
21+14.38 грн
100+9.05 грн
500+6.30 грн
1000+5.59 грн
2000+4.99 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
2N6517CBU 2n6515-d.pdf
2N6517CBU
Виробник: onsemi
Description: TRANS NPN 400V 0.5A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
2N6517CTA 2n6515-d.pdf
2N6517CTA
Виробник: onsemi
Description: TRANS NPN 400V 0.5A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику  од. на суму  грн.
2N6517TA 2N6517-D.PDF
2N6517TA
Виробник: onsemi
Description: TRANS NPN 350V 0.5A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+5.21 грн
4000+4.51 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N6519BU 2N6519.pdf
2N6519BU
Виробник: onsemi
Description: TRANS PNP 300V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
товару немає в наявності
В кошику  од. на суму  грн.
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