| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| ESD7004MUTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4 Type of diode: TVS array Breakdown voltage: 5.5V Semiconductor structure: common anode; quadruple Mounting: SMD Case: uDFN10 Max. off-state voltage: 5V Kind of package: reel; tape Application: HDMI; USB Number of channels: 4 |
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| SZESD7004MUTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; reel,tape Type of diode: TVS array Breakdown voltage: 5.5V Semiconductor structure: common anode; quadruple Mounting: SMD Case: uDFN10 Max. off-state voltage: 5V Kind of package: reel; tape Application: automotive industry |
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LM2903M | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 200nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Mounting: SMT Case: SO8 Operating temperature: -40...105°C Input offset voltage: 15mV Kind of package: tube Input offset current: 200nA Operating voltage: 2...36V |
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BC547B | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...800 Mounting: THT Frequency: 300MHz |
на замовлення 463 шт: термін постачання 21-30 дні (днів) |
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MC14052BDR2G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC Type of integrated circuit: analog switch Number of channels: 2 Case: SO16 Supply voltage: 3...18V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 600µA Technology: CMOS Kind of output: DP4T Kind of integrated circuit: demultiplexer; multiplexer |
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| MC14052BDG | ONSEMI |
Category: UnclassifiedDescription: MC14052BDG |
на замовлення 3308 шт: термін постачання 21-30 дні (днів) |
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| NLA9306MU3TAG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD Kind of package: reel; tape Type of integrated circuit: digital Case: uDFN8 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 5.5V DC Number of channels: 2 Kind of integrated circuit: bidirectional; SMBus; translator |
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В кошику од. на суму грн. | |||||||||||||
| NLA9306MU3TCG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD Kind of package: reel; tape Type of integrated circuit: digital Case: uDFN8 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 5.5V DC Number of channels: 2 Kind of integrated circuit: bidirectional; SMBus; translator |
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В кошику од. на суму грн. | |||||||||||||
| NLA9306MUQ1TCG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD Kind of package: reel; tape Type of integrated circuit: digital Case: UQFN8 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 5.5V DC Number of channels: 2 Kind of integrated circuit: bidirectional; SMBus; translator |
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В кошику од. на суму грн. | |||||||||||||
| NLV9306USG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Application: automotive industry Kind of package: reel; tape Type of integrated circuit: digital Case: US8 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 0...5.5V DC Number of channels: 2 Kind of integrated circuit: bidirectional; logic level voltage translator |
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| FXWA9306L8X | ONSEMI |
Category: Level translatorsDescription: IC: digital; 3-state,logic level voltage translator; Ch: 2; SMD Kind of package: reel; tape Type of integrated circuit: digital Case: MicorPAK8 Kind of output: open drain Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1...5.5V DC Number of outputs: 2 Number of channels: 2 Number of inputs: 2 Kind of integrated circuit: 3-state; logic level voltage translator Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing |
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| BAT54S | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.29W |
товару немає в наявності |
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| NTP055N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 305W Pulsed drain current: 132A Gate-source voltage: ±30V Gate charge: 96nC Drain current: 47A |
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| FCP125N65S3R0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
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| FCP165N65S3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 0.165Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 154W Pulsed drain current: 47.5A Gate-source voltage: ±20V Gate charge: 39nC Drain current: 19A |
товару немає в наявності |
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| FCB125N65S3 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
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| FCH125N65S3R0-F155 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Pulsed drain current: 60A Power dissipation: 181W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.105Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||
| FCH165N65S3R0-F155 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO247 On-state resistance: 0.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 154W Pulsed drain current: 47.5A Gate-source voltage: ±30V Gate charge: 39nC Drain current: 12.3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FCP125N65S3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NTB095N65S3HF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 36A Pulsed drain current: 90A Power dissipation: 272W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SZNSP2201MR6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Semiconductor structure: unidirectional Number of channels: 2 Max. off-state voltage: 5V Breakdown voltage: 6V Case: TSOP6 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MC74AC125DR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Manufacturer series: AC Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MC14512BDR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B Mounting: SMD Operating temperature: -40...85°C Family: HEF4000B Technology: TTL Type of integrated circuit: digital Case: SO16 Kind of package: reel; tape Kind of integrated circuit: data selector Number of channels: 8 Number of inputs: 8 Supply voltage: 3...18V DC |
на замовлення 2496 шт: термін постачання 21-30 дні (днів) |
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MMBZ12VALT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 12V; 2.35A; 40W; double,common anode; SOT23; Ch: 2 Case: SOT23 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common anode; double Version: ESD Type of diode: TVS array Application: universal Leakage current: 0.2µA Number of channels: 2 Max. forward impulse current: 2.35A Tolerance: ±5% Max. off-state voltage: 8.5V Breakdown voltage: 12V Peak pulse power dissipation: 40W |
на замовлення 1539 шт: термін постачання 21-30 дні (днів) |
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SM24T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 26.7V; 5A; 300W; double,common anode; SOT23; Ch: 2 Case: SOT23 Mounting: SMD Kind of package: reel; tape Version: ESD Application: universal Type of diode: TVS array Leakage current: 1µA Number of channels: 2 Max. off-state voltage: 24V Max. forward impulse current: 5A Breakdown voltage: 26.7V Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode; double |
на замовлення 2670 шт: термін постачання 21-30 дні (днів) |
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MC33164P-3G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open collector Active logical level: low Supply voltage: 1...10V DC Case: TO92 Operating temperature: -40...125°C Mounting: THT DC supply current: 32µA Maximum output current: 30mA Threshold on-voltage: 2.71V Kind of package: bulk Number of channels: 1 |
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GBU8KS | ONSEMI |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated Case: GBU |
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MUR460 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Kind of package: bulk Case: DO27 Reverse recovery time: 50ns Forward voltage at If: 1.25V Max. load current: 4A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| FPF2286UCX | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C Active logical level: high; low Type of integrated circuit: power switch Kind of package: reel; tape Mounting: SMD Integrated circuit features: thermal protection Case: WLCSP6 Operating temperature: -40...85°C On-state resistance: 25mΩ Number of channels: 1 Supply voltage: 2.8...23V DC Output current: 4A |
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MC14023BDR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Family: HEF4000B Kind of gate: NAND Mounting: SMD Case: SO14 Number of channels: triple; 3 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 3 Supply voltage: 3...18V DC Kind of package: reel; tape Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| FDBL0150N80 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 300A; 429W; H-PSOF8L Case: H-PSOF8L Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 172nC Drain current: 300A On-state resistance: 4.6Ω Gate-source voltage: ±20V Power dissipation: 429W Drain-source voltage: 80V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FSL538APG | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 860mA; 800V; 100kHz; Ch: 1; DIP7; flyback Type of integrated circuit: PMIC Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...125°C Topology: flyback Output current: 860mA On-state resistance: 4.6Ω Operating voltage: 8...24.5V DC Power: 20W Duty cycle factor: 68...82% Input voltage: 85...265V Frequency: 0.1MHz Output voltage: 800V Kind of integrated circuit: PWM controller |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FSL538HPG | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 660mA; 800V; 130kHz; Ch: 1; DIP7; flyback Type of integrated circuit: PMIC Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...125°C Topology: flyback Output current: 0.66A On-state resistance: 4.6Ω Operating voltage: 8...24.5V DC Power: 17W Duty cycle factor: 68...82% Input voltage: 85...265V Frequency: 130kHz Output voltage: 800V Kind of integrated circuit: PWM controller |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NUP1105LT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode Type of diode: TVS array Breakdown voltage: 25.7...28.4V Max. forward impulse current: 8A Peak pulse power dissipation: 0.35kW Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Number of channels: 1 Kind of package: reel; tape Application: CAN Version: ESD Leakage current: 0.1µA |
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В кошику од. на суму грн. | |||||||||||||
| SZNUP1105LT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode Type of diode: TVS array Breakdown voltage: 25.7...28.4V Max. forward impulse current: 8A Peak pulse power dissipation: 0.35kW Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Number of channels: 1 Kind of package: reel; tape Application: automotive industry Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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GBU6K | ONSEMI |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 797 шт: термін постачання 21-30 дні (днів) |
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2N6387G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB Kind of package: tube Kind of transistor: Darlington Case: TO220AB Mounting: THT Type of transistor: NPN Power dissipation: 2W Collector current: 10A Collector-emitter voltage: 60V Polarisation: bipolar |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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| NTGS3446T1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 2W; TSOP6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.1A Power dissipation: 2W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||
| BZX84C15 | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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FDP42AN15A0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 24A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.107Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
на замовлення 92 шт: термін постачання 21-30 дні (днів) |
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| NC7WZ126L8X | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; MicroPak8; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS Mounting: SMD Case: MicroPak8 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 1.65...5.5V DC Quiescent current: 10µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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NL27WZ126USG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 2; CMOS,TTL; SMD; US8 Mounting: SMD Operating temperature: -55...125°C Number of channels: 2 Supply voltage: 1.65...5.5V DC Kind of output: 3-state Kind of integrated circuit: buffer; non-inverting Technology: CMOS; TTL Type of integrated circuit: digital Case: US8 |
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В кошику од. на суму грн. | ||||||||||||
| NLV17SZ126DFT2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 10uA Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Quiescent current: 10µA Number of channels: 1 Supply voltage: 1.65...5.5V DC Kind of output: 3-state Application: automotive industry Kind of integrated circuit: buffer; non-inverting Technology: CMOS Type of integrated circuit: digital Case: SC88A |
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В кошику од. на суму грн. | |||||||||||||
| NC7SZ126L6X | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital Type of integrated circuit: digital |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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| NC7SZ126L6X-L22175 | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; IN: 1; CMOS; SMD Mounting: SMD Operating temperature: -40...85°C Number of inputs: 1 Number of outputs: 1 Kind of output: 3-state Manufacturer series: 7SZ Kind of integrated circuit: buffer; line driver; non-inverting Technology: CMOS Type of integrated circuit: digital Case: SIP6 |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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1N5919BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 5.6V; bulk; CASE59; single diode; 5uA; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 5.6V Kind of package: bulk Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N59xxB |
на замовлення 1851 шт: термін постачання 21-30 дні (днів) |
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| 1N5919BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA Type of diode: Zener Power dissipation: 3W Zener voltage: 5.6V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N59xxB |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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| FDMA1024NZ | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 6A Drain current: 5A Gate charge: 7.3nC On-state resistance: 75mΩ Power dissipation: 1.4W Gate-source voltage: ±8V Case: WDFN6 Kind of channel: enhancement Mounting: SMD |
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В кошику од. на суму грн. | |||||||||||||
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FDME1024NZT | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET Type of transistor: N-MOSFET x2 Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.8A Gate charge: 4.2nC On-state resistance: 0.16Ω Power dissipation: 1.4W Gate-source voltage: ±8V Case: MicroFET Kind of channel: enhancement Mounting: SMD Technology: PowerTrench® |
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| NTMFS4C024NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 174A Drain current: 21.7A Gate charge: 14nC On-state resistance: 2.8mΩ Power dissipation: 2.57W Gate-source voltage: ±20V Case: DFN5 Kind of channel: enhancement Mounting: SMD |
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| MJE371G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 40V; 4A; 40W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 4A Power dissipation: 40W Case: TO225 Current gain: 40 Mounting: THT Kind of package: bulk |
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| NSVR0240V2T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape Case: SOD523 Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Load current: 0.25A Max. forward voltage: 0.7V Max. forward impulse current: 2A Max. off-state voltage: 40V Application: automotive industry |
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| NSVR0240HT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 40V; 0.25A; reel,tape Case: SOD323 Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Load current: 0.25A Max. forward voltage: 0.71V Max. forward impulse current: 1A Max. off-state voltage: 40V Application: automotive industry |
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| NSVR0240V2T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape Case: SOD523 Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Load current: 0.25A Max. forward voltage: 0.7V Max. forward impulse current: 2A Max. off-state voltage: 40V Application: automotive industry |
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| MC74HC377ADTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Manufacturer series: HC |
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| US1JFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Kind of package: reel; tape |
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|
NRVUS1JFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
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|
MC14001UBDR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Mounting: SMD Kind of gate: NOR Case: SO14 Number of channels: quad; 4 Kind of package: reel; tape Operating temperature: -55...125°C Delay time: 100ns Number of inputs: 2 Supply voltage: 3...18V DC Family: HEF4000B Technology: CMOS |
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| NCV4269CD150R2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SO8; SMD; Ch: 1 Mounting: SMD Case: SO8 Output current: 0.15A Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Number of channels: 1 Output voltage: 5V Type of integrated circuit: voltage regulator Application: automotive industry |
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| NCV4279CD150R2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SO8; SMD; Ch: 1 Mounting: SMD Case: SO8 Output current: 0.15A Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Number of channels: 1 Output voltage: 5V Type of integrated circuit: voltage regulator Application: automotive industry |
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| ESD7004MUTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: HDMI; USB
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: HDMI; USB
Number of channels: 4
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| SZESD7004MUTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
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| LM2903M |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 200nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...105°C
Input offset voltage: 15mV
Kind of package: tube
Input offset current: 200nA
Operating voltage: 2...36V
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 200nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...105°C
Input offset voltage: 15mV
Kind of package: tube
Input offset current: 200nA
Operating voltage: 2...36V
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| BC547B |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
на замовлення 463 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.19 грн |
| 24+ | 17.06 грн |
| 28+ | 14.43 грн |
| 36+ | 11.08 грн |
| 100+ | 7.50 грн |
| MC14052BDR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Number of channels: 2
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Technology: CMOS
Kind of output: DP4T
Kind of integrated circuit: demultiplexer; multiplexer
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Number of channels: 2
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Technology: CMOS
Kind of output: DP4T
Kind of integrated circuit: demultiplexer; multiplexer
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| MC14052BDG |
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на замовлення 3308 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 48+ | 19.15 грн |
| NLA9306MU3TAG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
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| NLA9306MU3TCG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
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| NLA9306MUQ1TCG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: UQFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: UQFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
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| NLV9306USG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: digital
Case: US8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 0...5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; logic level voltage translator
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: digital
Case: US8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 0...5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; logic level voltage translator
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| FXWA9306L8X |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; 3-state,logic level voltage translator; Ch: 2; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: MicorPAK8
Kind of output: open drain
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1...5.5V DC
Number of outputs: 2
Number of channels: 2
Number of inputs: 2
Kind of integrated circuit: 3-state; logic level voltage translator
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Category: Level translators
Description: IC: digital; 3-state,logic level voltage translator; Ch: 2; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: MicorPAK8
Kind of output: open drain
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1...5.5V DC
Number of outputs: 2
Number of channels: 2
Number of inputs: 2
Kind of integrated circuit: 3-state; logic level voltage translator
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
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| BAT54S |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
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| NTP055N65S3H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 305W
Pulsed drain current: 132A
Gate-source voltage: ±30V
Gate charge: 96nC
Drain current: 47A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 305W
Pulsed drain current: 132A
Gate-source voltage: ±30V
Gate charge: 96nC
Drain current: 47A
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| FCP125N65S3R0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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| FCP165N65S3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 154W
Pulsed drain current: 47.5A
Gate-source voltage: ±20V
Gate charge: 39nC
Drain current: 19A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 154W
Pulsed drain current: 47.5A
Gate-source voltage: ±20V
Gate charge: 39nC
Drain current: 19A
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| FCB125N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FCH125N65S3R0-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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| FCH165N65S3R0-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 154W
Pulsed drain current: 47.5A
Gate-source voltage: ±30V
Gate charge: 39nC
Drain current: 12.3A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 154W
Pulsed drain current: 47.5A
Gate-source voltage: ±30V
Gate charge: 39nC
Drain current: 12.3A
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| FCP125N65S3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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| NTB095N65S3HF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SZNSP2201MR6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Case: TSOP6
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Case: TSOP6
Application: automotive industry
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| MC74AC125DR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
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| MC14512BDR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Mounting: SMD
Operating temperature: -40...85°C
Family: HEF4000B
Technology: TTL
Type of integrated circuit: digital
Case: SO16
Kind of package: reel; tape
Kind of integrated circuit: data selector
Number of channels: 8
Number of inputs: 8
Supply voltage: 3...18V DC
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Mounting: SMD
Operating temperature: -40...85°C
Family: HEF4000B
Technology: TTL
Type of integrated circuit: digital
Case: SO16
Kind of package: reel; tape
Kind of integrated circuit: data selector
Number of channels: 8
Number of inputs: 8
Supply voltage: 3...18V DC
на замовлення 2496 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.64 грн |
| 16+ | 25.28 грн |
| 25+ | 22.57 грн |
| 100+ | 19.62 грн |
| 250+ | 18.34 грн |
| 500+ | 17.54 грн |
| MMBZ12VALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 12V; 2.35A; 40W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Version: ESD
Type of diode: TVS array
Application: universal
Leakage current: 0.2µA
Number of channels: 2
Max. forward impulse current: 2.35A
Tolerance: ±5%
Max. off-state voltage: 8.5V
Breakdown voltage: 12V
Peak pulse power dissipation: 40W
Category: Protection diodes - arrays
Description: Diode: TVS array; 12V; 2.35A; 40W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Version: ESD
Type of diode: TVS array
Application: universal
Leakage current: 0.2µA
Number of channels: 2
Max. forward impulse current: 2.35A
Tolerance: ±5%
Max. off-state voltage: 8.5V
Breakdown voltage: 12V
Peak pulse power dissipation: 40W
на замовлення 1539 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.88 грн |
| 40+ | 10.21 грн |
| 46+ | 8.85 грн |
| 100+ | 4.89 грн |
| 500+ | 3.19 грн |
| 1000+ | 2.69 грн |
| SM24T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 300W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Application: universal
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 24V
Max. forward impulse current: 5A
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 300W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Application: universal
Type of diode: TVS array
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 24V
Max. forward impulse current: 5A
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
на замовлення 2670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.47 грн |
| 27+ | 14.99 грн |
| 47+ | 8.61 грн |
| 500+ | 4.70 грн |
| MC33164P-3G | ![]() |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: TO92
Operating temperature: -40...125°C
Mounting: THT
DC supply current: 32µA
Maximum output current: 30mA
Threshold on-voltage: 2.71V
Kind of package: bulk
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: TO92
Operating temperature: -40...125°C
Mounting: THT
DC supply current: 32µA
Maximum output current: 30mA
Threshold on-voltage: 2.71V
Kind of package: bulk
Number of channels: 1
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| GBU8KS |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
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| MUR460 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: bulk
Case: DO27
Reverse recovery time: 50ns
Forward voltage at If: 1.25V
Max. load current: 4A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: bulk
Case: DO27
Reverse recovery time: 50ns
Forward voltage at If: 1.25V
Max. load current: 4A
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| FPF2286UCX |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Active logical level: high; low
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Integrated circuit features: thermal protection
Case: WLCSP6
Operating temperature: -40...85°C
On-state resistance: 25mΩ
Number of channels: 1
Supply voltage: 2.8...23V DC
Output current: 4A
Category: Power switches - integrated circuits
Description: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Active logical level: high; low
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Integrated circuit features: thermal protection
Case: WLCSP6
Operating temperature: -40...85°C
On-state resistance: 25mΩ
Number of channels: 1
Supply voltage: 2.8...23V DC
Output current: 4A
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| MC14023BDR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: NAND
Mounting: SMD
Case: SO14
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: NAND
Mounting: SMD
Case: SO14
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
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| FDBL0150N80 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 429W; H-PSOF8L
Case: H-PSOF8L
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 172nC
Drain current: 300A
On-state resistance: 4.6Ω
Gate-source voltage: ±20V
Power dissipation: 429W
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 429W; H-PSOF8L
Case: H-PSOF8L
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 172nC
Drain current: 300A
On-state resistance: 4.6Ω
Gate-source voltage: ±20V
Power dissipation: 429W
Drain-source voltage: 80V
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| FSL538APG |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 860mA; 800V; 100kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 860mA
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 20W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 0.1MHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 860mA; 800V; 100kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 860mA
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 20W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 0.1MHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
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| FSL538HPG |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 660mA; 800V; 130kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 0.66A
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 17W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 130kHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 660mA; 800V; 130kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 0.66A
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 17W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 130kHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
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| NUP1105LT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Kind of package: reel; tape
Application: CAN
Version: ESD
Leakage current: 0.1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Kind of package: reel; tape
Application: CAN
Version: ESD
Leakage current: 0.1µA
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| SZNUP1105LT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.7÷28.4V; 8A; 350W; double,common cathode
Type of diode: TVS array
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 8A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
Version: ESD
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| GBU6K |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 797 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 103.05 грн |
| 10+ | 64.59 грн |
| 20+ | 59.01 грн |
| 40+ | 55.02 грн |
| 100+ | 51.03 грн |
| 2N6387G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB
Kind of package: tube
Kind of transistor: Darlington
Case: TO220AB
Mounting: THT
Type of transistor: NPN
Power dissipation: 2W
Collector current: 10A
Collector-emitter voltage: 60V
Polarisation: bipolar
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB
Kind of package: tube
Kind of transistor: Darlington
Case: TO220AB
Mounting: THT
Type of transistor: NPN
Power dissipation: 2W
Collector current: 10A
Collector-emitter voltage: 60V
Polarisation: bipolar
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.58 грн |
| 10+ | 61.16 грн |
| NTGS3446T1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 2W; TSOP6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.1A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| BZX84C15 |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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| FDP42AN15A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 92 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 188.92 грн |
| 5+ | 143.53 грн |
| 10+ | 127.58 грн |
| 50+ | 102.86 грн |
| NC7WZ126L8X |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; MicroPak8; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: MicroPak8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; MicroPak8; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: MicroPak8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
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| NL27WZ126USG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS,TTL; SMD; US8
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS; TTL
Type of integrated circuit: digital
Case: US8
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS,TTL; SMD; US8
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS; TTL
Type of integrated circuit: digital
Case: US8
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| NLV17SZ126DFT2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 10uA
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 10µA
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Application: automotive industry
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Case: SC88A
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 10uA
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 10µA
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Kind of output: 3-state
Application: automotive industry
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Case: SC88A
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| NC7SZ126L6X |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 4.80 грн |
| NC7SZ126L6X-L22175 |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; IN: 1; CMOS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Number of outputs: 1
Kind of output: 3-state
Manufacturer series: 7SZ
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Case: SIP6
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; IN: 1; CMOS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Number of outputs: 1
Kind of output: 3-state
Manufacturer series: 7SZ
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS
Type of integrated circuit: digital
Case: SIP6
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 9.88 грн |
| 1N5919BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; bulk; CASE59; single diode; 5uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; bulk; CASE59; single diode; 5uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
на замовлення 1851 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.48 грн |
| 19+ | 21.37 грн |
| 22+ | 18.34 грн |
| 28+ | 14.35 грн |
| 100+ | 9.73 грн |
| 500+ | 9.57 грн |
| 1N5919BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.76 грн |
| FDMA1024NZ |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 5A
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: WDFN6
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 5A
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: WDFN6
Kind of channel: enhancement
Mounting: SMD
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| FDME1024NZT |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
Technology: PowerTrench®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
Technology: PowerTrench®
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| NTMFS4C024NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
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| MJE371G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Current gain: 40
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Current gain: 40
Mounting: THT
Kind of package: bulk
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| NSVR0240V2T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Case: SOD523
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.7V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Case: SOD523
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.7V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Application: automotive industry
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| NSVR0240HT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.25A; reel,tape
Case: SOD323
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.71V
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.25A; reel,tape
Case: SOD323
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.71V
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Application: automotive industry
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| NSVR0240V2T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Case: SOD523
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.7V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Case: SOD523
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.7V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Application: automotive industry
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| MC74HC377ADTR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
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| US1JFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
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| NRVUS1JFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| MC14001UBDR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
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| NCV4269CD150R2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SO8; SMD; Ch: 1
Mounting: SMD
Case: SO8
Output current: 0.15A
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Output voltage: 5V
Type of integrated circuit: voltage regulator
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SO8; SMD; Ch: 1
Mounting: SMD
Case: SO8
Output current: 0.15A
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Output voltage: 5V
Type of integrated circuit: voltage regulator
Application: automotive industry
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| NCV4279CD150R2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SO8; SMD; Ch: 1
Mounting: SMD
Case: SO8
Output current: 0.15A
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Output voltage: 5V
Type of integrated circuit: voltage regulator
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SO8; SMD; Ch: 1
Mounting: SMD
Case: SO8
Output current: 0.15A
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Output voltage: 5V
Type of integrated circuit: voltage regulator
Application: automotive industry
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