| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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LP2950CZ-5.0RPG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: Ammo Pack Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBRS140T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
на замовлення 4006 шт: термін постачання 21-30 дні (днів) |
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MBRS2040LT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. load current: 4A Kind of package: reel; tape |
на замовлення 3942 шт: термін постачання 21-30 дні (днів) |
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MBRS3200T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.59V Kind of package: reel; tape |
на замовлення 557 шт: термін постачання 21-30 дні (днів) |
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MBRS3201T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.59V Kind of package: reel; tape |
на замовлення 429 шт: термін постачання 21-30 дні (днів) |
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MBRS410LT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 10V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.225V Kind of package: reel; tape |
на замовлення 1244 шт: термін постачання 21-30 дні (днів) |
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MBRS230LT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.63V Kind of package: reel; tape Max. load current: 4A |
на замовлення 1801 шт: термін постачання 21-30 дні (днів) |
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MBRS2H100T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.65V Kind of package: reel; tape Max. load current: 130A |
на замовлення 2377 шт: термін постачання 21-30 дні (днів) |
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MBRS120T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
на замовлення 158 шт: термін постачання 21-30 дні (днів) |
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| MBRS320T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 20V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBRS330T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 30V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJD35N04G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK Polarisation: bipolar Case: DPAK Kind of transistor: Darlington Type of transistor: NPN Kind of package: tube Mounting: SMD Collector current: 4A Power dissipation: 45W Collector-emitter voltage: 350V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MJD350T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: tube Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V Frequency: 10MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJD35N04T4G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK Polarisation: bipolar Case: DPAK Kind of transistor: Darlington Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 4A Power dissipation: 45W Collector-emitter voltage: 350V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJVNJD35N04T4G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK Polarisation: bipolar Kind of transistor: Darlington Case: DPAK Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 4A Power dissipation: 45W Collector-emitter voltage: 350V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJVMJD350T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SS28 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape; 1.3W Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 80V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.3W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NXH006P120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 14.6mΩ Drain current: 191A Pulsed drain current: 382A Drain-source voltage: 1.2kV Power dissipation: 556W Topology: MOSFET half-bridge Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NXH006P120MNF2PTG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -15...25V On-state resistance: 7.28mΩ Drain current: 304A Pulsed drain current: 912A Drain-source voltage: 1.2kV Power dissipation: 950W Topology: MOSFET half-bridge Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTDV20N06T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MC74VHCT32ADR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; level shifter; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SOIC14 Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOIC14 Operating temperature: -55...125°C Family: VHCT Kind of package: reel; tape Kind of integrated circuit: level shifter Supply voltage: 2...5.5V DC Manufacturer series: VHCT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74VHCT32ADTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷5.5VDC; 40uA Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Quiescent current: 40µA Family: VHCT Kind of package: reel; tape Supply voltage: 2...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| S310FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape Max. forward voltage: 0.85V Load current: 3A Max. forward impulse current: 80A Max. off-state voltage: 100V Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SOD123F |
на замовлення 2495 шт: термін постачання 21-30 дні (днів) |
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NCV317LBDR2G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 0.1A; SO8 Kind of package: reel; tape Application: automotive industry Manufacturer series: NCV317L Case: SO8 Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output current: 0.1A Number of channels: 1 Tolerance: ±1.5% Output voltage: 1.2...37V Input voltage: 1.2...40V Kind of voltage regulator: adjustable; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV317LBZG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Kind of package: bulk Application: automotive industry Case: TO92 Mounting: THT Type of integrated circuit: voltage regulator Output current: 20mA Number of channels: 1 Output voltage: 1.2...37V Kind of voltage regulator: adjustable; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCV317LBZRAG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Kind of package: reel; tape Application: automotive industry Case: TO92 Mounting: THT Type of integrated circuit: voltage regulator Output current: 20mA Number of channels: 1 Output voltage: 1.2...37V Kind of voltage regulator: adjustable; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NV25M01DTUTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz Operating voltage: 1.8...5.5V Mounting: SMD Case: TSSOP8 Operating temperature: -40...105°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Access time: 75ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CAT25M01VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz Operating voltage: 1.8...5.5V Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CAT25M01XI-T2 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz Operating voltage: 1.8...5.5V Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CAT25M01YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz Operating voltage: 1.8...5.5V Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CAV25M01VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz Operating voltage: 2.5...5.5V Mounting: SMD Case: SOIC8 Operating temperature: -40...125°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Access time: 40ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CAV25M01YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz Operating voltage: 2.5...5.5V Mounting: SMD Case: TSSOP8 Operating temperature: -40...125°C Memory organisation: 128kx8bit Memory: 1Mb EEPROM Kind of package: reel; tape Clock frequency: 10MHz Kind of interface: serial Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Access time: 40ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MJ11028G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3 Type of transistor: NPN Polarisation: bipolar Power dissipation: 300W Case: TO3 Mounting: THT Kind of package: in-tray Collector-emitter voltage: 60V Collector current: 50A Kind of transistor: Darlington |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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| VESTL431BVDR2G | ONSEMI |
Category: Unclassified Description: VESTL431BVDR2G |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| MC14046BDWG | ONSEMI |
Category: UnclassifiedDescription: MC14046BDWG |
на замовлення 2256 шт: термін постачання 21-30 дні (днів) |
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| NCV47710PDAJR2G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8 Kind of voltage regulator: adjustable; LDO; linear Application: automotive industry Kind of package: reel; tape Case: SO8 Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.35A Number of channels: 1 Output voltage: 5...20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1SMB5937BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 33V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 1775 шт: термін постачання 21-30 дні (днів) |
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1SMB5928BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 13V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 9250 шт: термін постачання 21-30 дні (днів) |
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1SMB5941BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 47V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 1334 шт: термін постачання 21-30 дні (днів) |
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1SMB5932BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 4203 шт: термін постачання 21-30 дні (днів) |
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1SMB5933BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 22V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 22V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 376 шт: термін постачання 21-30 дні (днів) |
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1SMB5926BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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1SMB5946BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 75V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 75V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 330 шт: термін постачання 21-30 дні (днів) |
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1SMB5943BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 56V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 1398 шт: термін постачання 21-30 дні (днів) |
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1SMB5949BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 100V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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1SMB5920BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 1426 шт: термін постачання 21-30 дні (днів) |
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NL17SZ74USG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; US8 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Technology: CMOS Mounting: SMD Case: US8 Operating temperature: -40...85°C Supply voltage: 2...6V DC Trigger: positive-edge-triggered Manufacturer series: 7SZ |
на замовлення 2213 шт: термін постачання 21-30 дні (днів) |
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| MC74HCT241ADTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,octal,line receiver,line driver Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Manufacturer series: HCT Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: HCT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBT4124LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 120...360 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MMBT4126LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 25V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 120...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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В кошику од. на суму грн. | |||||||||||||||||
|
BC846BLT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MC74ACT161DR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL Type of integrated circuit: digital Kind of integrated circuit: asynchronous reset; binary counter Number of channels: 1 Number of inputs: 9 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: SOIC16 Family: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
MC74ACT163DR2G | ONSEMI |
Category: Counters/dividersDescription: IC: digital; binary counter,synchronous reset; Ch: 1; IN: 9; TTL Type of integrated circuit: digital Kind of integrated circuit: binary counter; synchronous reset Number of channels: 1 Number of inputs: 9 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: SOIC16 Family: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| UJ4C075033K3S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 35A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 35A Pulsed drain current: 140A Power dissipation: 242W Case: TO247-3 Gate-source voltage: -25...25V On-state resistance: 75Ω Mounting: THT Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| UJ4C075033K4S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 35A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 35A Pulsed drain current: 140A Power dissipation: 242W Case: TO247-4 Gate-source voltage: -25...25V On-state resistance: 75Ω Mounting: THT Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SPZT2907AT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...300 Mounting: SMD Kind of package: tape Frequency: 200MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ISL9V5045S3ST-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level Version: ESD Kind of package: reel; tape Type of transistor: IGBT Features of semiconductor devices: logic level Mounting: SMD Gate charge: 32nC Power dissipation: 300W Collector current: 43A Gate-emitter voltage: ±10V Collector-emitter voltage: 450V Application: ignition systems Case: D2PAK |
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В кошику од. на суму грн. | |||||||||||||||||
| ISL9V2040D3ST | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD Version: ESD Kind of package: reel; tape Type of transistor: IGBT Features of semiconductor devices: logic level Mounting: SMD Gate charge: 12nC Power dissipation: 130W Collector current: 10A Gate-emitter voltage: ±10V Collector-emitter voltage: 400V Application: ignition systems Case: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ISL9V5036P3-F085 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level Version: ESD Kind of package: tube Type of transistor: IGBT Features of semiconductor devices: logic level Mounting: THT Gate charge: 32nC Power dissipation: 250W Collector current: 31A Gate-emitter voltage: ±10V Collector-emitter voltage: 360V Application: ignition systems Case: TO220-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ISL9V3040D3ST | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. |
| LP2950CZ-5.0RPG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| MBRS140T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
на замовлення 4006 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.64 грн |
| 26+ | 15.85 грн |
| 50+ | 12.78 грн |
| 100+ | 11.48 грн |
| 250+ | 9.87 грн |
| 500+ | 8.57 грн |
| 1000+ | 7.44 грн |
| 2500+ | 5.90 грн |
| MBRS2040LT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 4A
Kind of package: reel; tape
на замовлення 3942 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.00 грн |
| 22+ | 18.44 грн |
| 50+ | 14.64 грн |
| 100+ | 13.18 грн |
| 250+ | 11.48 грн |
| 500+ | 10.35 грн |
| 1000+ | 9.30 грн |
| 2500+ | 8.90 грн |
| MBRS3200T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
на замовлення 557 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.32 грн |
| 15+ | 27.33 грн |
| 17+ | 25.15 грн |
| 50+ | 20.54 грн |
| 100+ | 18.68 грн |
| 250+ | 16.34 грн |
| 500+ | 15.20 грн |
| MBRS3201T3G | ![]() |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
на замовлення 429 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.64 грн |
| 10+ | 40.92 грн |
| 11+ | 38.25 грн |
| 50+ | 32.27 грн |
| 100+ | 29.84 грн |
| 250+ | 28.30 грн |
| MBRS410LT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.225V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.225V
Kind of package: reel; tape
на замовлення 1244 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 87.09 грн |
| 6+ | 76.02 грн |
| MBRS230LT3G | ![]() |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Max. load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Max. load current: 4A
на замовлення 1801 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.00 грн |
| 18+ | 22.64 грн |
| 20+ | 21.11 грн |
| 50+ | 16.66 грн |
| 100+ | 14.80 грн |
| 250+ | 12.62 грн |
| 500+ | 11.24 грн |
| 1000+ | 10.84 грн |
| MBRS2H100T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 130A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 130A
на замовлення 2377 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.00 грн |
| 21+ | 19.33 грн |
| 50+ | 16.90 грн |
| MBRS120T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
на замовлення 158 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.71 грн |
| 17+ | 24.02 грн |
| 50+ | 18.60 грн |
| 100+ | 16.74 грн |
| MBRS320T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
товару немає в наявності
В кошику
од. на суму грн.
| MBRS330T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
товару немає в наявності
В кошику
од. на суму грн.
| NJD35N04G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: tube
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: tube
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
товару немає в наявності
В кошику
од. на суму грн.
| MJD350T4G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: tube
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: tube
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
товару немає в наявності
В кошику
од. на суму грн.
| NJD35N04T4G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
товару немає в наявності
В кошику
од. на суму грн.
| NJVNJD35N04T4G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Kind of transistor: Darlington
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Kind of transistor: Darlington
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NJVMJD350T4G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| SS28 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 80V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
товару немає в наявності
В кошику
од. на суму грн.
| NXH006P120M3F2PTHG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
| NXH006P120MNF2PTG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
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| NTDV20N06T4G-VF01 |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MC74VHCT32ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; level shifter; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SOIC14
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC14
Operating temperature: -55...125°C
Family: VHCT
Kind of package: reel; tape
Kind of integrated circuit: level shifter
Supply voltage: 2...5.5V DC
Manufacturer series: VHCT
Category: Gates, inverters
Description: IC: digital; level shifter; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SOIC14
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC14
Operating temperature: -55...125°C
Family: VHCT
Kind of package: reel; tape
Kind of integrated circuit: level shifter
Supply voltage: 2...5.5V DC
Manufacturer series: VHCT
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| MC74VHCT32ADTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Quiescent current: 40µA
Family: VHCT
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Quiescent current: 40µA
Family: VHCT
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
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| S310FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.85V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.85V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD123F
на замовлення 2495 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.26 грн |
| 21+ | 19.89 грн |
| 50+ | 17.39 грн |
| 100+ | 16.25 грн |
| 250+ | 16.09 грн |
| NCV317LBDR2G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 0.1A; SO8
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: NCV317L
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.1A
Number of channels: 1
Tolerance: ±1.5%
Output voltage: 1.2...37V
Input voltage: 1.2...40V
Kind of voltage regulator: adjustable; LDO; linear
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 0.1A; SO8
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: NCV317L
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.1A
Number of channels: 1
Tolerance: ±1.5%
Output voltage: 1.2...37V
Input voltage: 1.2...40V
Kind of voltage regulator: adjustable; LDO; linear
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| NCV317LBZG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: bulk
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: bulk
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
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| NCV317LBZRAG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: reel; tape
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Kind of package: reel; tape
Application: automotive industry
Case: TO92
Mounting: THT
Type of integrated circuit: voltage regulator
Output current: 20mA
Number of channels: 1
Output voltage: 1.2...37V
Kind of voltage regulator: adjustable; linear
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| NV25M01DTUTG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...105°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 75ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...105°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 75ns
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| CAT25M01VI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
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| CAT25M01XI-T2 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
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| CAT25M01YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 1.8÷5.5V; 10MHz
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
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| CAV25M01VE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
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| CAV25M01YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 2.5÷5.5V; 10MHz
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...125°C
Memory organisation: 128kx8bit
Memory: 1Mb EEPROM
Kind of package: reel; tape
Clock frequency: 10MHz
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
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| MJ11028G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector-emitter voltage: 60V
Collector current: 50A
Kind of transistor: Darlington
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector-emitter voltage: 60V
Collector current: 50A
Kind of transistor: Darlington
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 608.75 грн |
| 5+ | 547.47 грн |
| VESTL431BVDR2G |
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 6.62 грн |
| MC14046BDWG |
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на замовлення 2256 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 47+ | 38.75 грн |
| NCV47710PDAJR2G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.35A
Number of channels: 1
Output voltage: 5...20V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.35A
Number of channels: 1
Output voltage: 5...20V
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| 1SMB5937BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 33V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 33V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 1775 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.42 грн |
| 32+ | 12.78 грн |
| 37+ | 11.08 грн |
| 43+ | 9.54 грн |
| 53+ | 7.68 грн |
| 100+ | 6.71 грн |
| 200+ | 6.47 грн |
| 1SMB5928BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 13V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 13V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 9250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.77 грн |
| 26+ | 15.85 грн |
| 30+ | 13.67 грн |
| 50+ | 9.38 грн |
| 100+ | 8.01 грн |
| 200+ | 7.12 грн |
| 1SMB5941BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 47V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 47V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 1334 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.77 грн |
| 25+ | 16.17 грн |
| 28+ | 14.64 грн |
| 50+ | 11.24 грн |
| 100+ | 9.95 грн |
| 200+ | 8.81 грн |
| 500+ | 7.52 грн |
| 1000+ | 7.12 грн |
| 1SMB5932BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 4203 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.29 грн |
| 29+ | 14.23 грн |
| 33+ | 12.37 грн |
| 52+ | 7.93 грн |
| 100+ | 6.63 грн |
| 1SMB5933BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 22V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 22V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 22V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 376 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.29 грн |
| 30+ | 13.59 грн |
| 34+ | 11.97 грн |
| 50+ | 8.81 грн |
| 100+ | 7.84 грн |
| 1SMB5926BT3G | ![]() |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 11V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 43 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.77 грн |
| 29+ | 14.07 грн |
| 1SMB5946BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 75V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 75V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 330 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.00 грн |
| 21+ | 19.33 грн |
| 50+ | 13.75 грн |
| 100+ | 11.73 грн |
| 1SMB5943BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 1398 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.77 грн |
| 28+ | 14.88 грн |
| 32+ | 13.02 грн |
| 50+ | 9.54 грн |
| 100+ | 8.41 грн |
| 200+ | 7.60 грн |
| 1SMB5949BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.77 грн |
| 23+ | 17.79 грн |
| 1SMB5920BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 1426 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.55 грн |
| 39+ | 10.51 грн |
| 46+ | 8.81 грн |
| 65+ | 6.31 грн |
| NL17SZ74USG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; US8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: US8
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; US8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: US8
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
на замовлення 2213 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.68 грн |
| 34+ | 11.97 грн |
| 39+ | 10.59 грн |
| 45+ | 9.06 грн |
| 100+ | 8.33 грн |
| MC74HCT241ADTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
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| MMBT4124LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| MMBT4126LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 120...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 120...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| BC846BLT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| MC74ACT161DR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
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| MC74ACT163DR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary counter,synchronous reset; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: binary counter; synchronous reset
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; binary counter,synchronous reset; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: binary counter; synchronous reset
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
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| UJ4C075033K3S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 35A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 242W
Case: TO247-3
Gate-source voltage: -25...25V
On-state resistance: 75Ω
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 35A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 242W
Case: TO247-3
Gate-source voltage: -25...25V
On-state resistance: 75Ω
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
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| UJ4C075033K4S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 35A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 242W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 75Ω
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 35A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 242W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 75Ω
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
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| SPZT2907AT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: tape
Frequency: 200MHz
Application: automotive industry
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| ISL9V5045S3ST-F085 |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 32nC
Power dissipation: 300W
Collector current: 43A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 450V
Application: ignition systems
Case: D2PAK
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 32nC
Power dissipation: 300W
Collector current: 43A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 450V
Application: ignition systems
Case: D2PAK
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| ISL9V2040D3ST |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 12nC
Power dissipation: 130W
Collector current: 10A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 400V
Application: ignition systems
Case: DPAK
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 12nC
Power dissipation: 130W
Collector current: 10A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 400V
Application: ignition systems
Case: DPAK
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| ISL9V5036P3-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level
Version: ESD
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: THT
Gate charge: 32nC
Power dissipation: 250W
Collector current: 31A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 360V
Application: ignition systems
Case: TO220-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 360V; 31A; 250W; TO220-3; Features: logic level
Version: ESD
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: THT
Gate charge: 32nC
Power dissipation: 250W
Collector current: 31A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 360V
Application: ignition systems
Case: TO220-3
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| ISL9V3040D3ST |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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