| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5222B | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.5V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N5226BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.3V; CASE017AG; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N5227B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; bulk; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N5223B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; bulk; 1N52xxB Tolerance: ±5% Mounting: THT Manufacturer series: 1N52xxB Power dissipation: 0.5W Kind of package: bulk Semiconductor structure: single diode Case: CASE017AG Zener voltage: 2.7V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N5227BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N5229BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FOD3125 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 60ns Turn-off time: 60ns Max. off-state voltage: 5V Output voltage: 0...35V Slew rate: 50kV/μs |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
| NTND31225CZTAG | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Mounting: SMD Case: XLLGA6 Power dissipation: 0.125W Polarisation: unipolar Drain current: 220/-127mA Kind of channel: enhancement Drain-source voltage: 20/-20V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 1.5/5Ω |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||
| NCP45560IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: high Control voltage: 0.5...13.5V DC Output current: 17A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN12 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 6.8mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP45560IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: low Control voltage: 0.5...13.5V DC Output current: 17A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN12 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 6.8mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FQD2N90TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK Mounting: SMD Gate charge: 15nC Polarisation: unipolar Drain current: 1.08A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: DPAK On-state resistance: 7.2Ω Pulsed drain current: 6.8A Power dissipation: 50W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| FQU2N90TU-AM002 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Mounting: THT Gate charge: 15nC Polarisation: unipolar Drain current: 1.08A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: IPAK On-state resistance: 7.2Ω Pulsed drain current: 6.8A Power dissipation: 50W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FQU2N90TU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Mounting: THT Gate charge: 15nC Polarisation: unipolar Drain current: 1.08A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: IPAK On-state resistance: 7.2Ω Pulsed drain current: 6.8A Power dissipation: 50W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NGTB35N65FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3 Type of transistor: IGBT Power dissipation: 150W Case: TO247-3 Mounting: THT Gate charge: 125nC Kind of package: tube Collector current: 35A Collector-emitter voltage: 650V Pulsed collector current: 120A Gate-emitter voltage: ±20V |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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LM7301SN1T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV Type of integrated circuit: operational amplifier Bandwidth: 4MHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 1.8...32V DC Case: SOT23-5 Operating temperature: -40...85°C Integrated circuit features: low power; rail-to-rail Input offset voltage: 6mV Kind of package: reel; tape Input offset current: 55nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74VHC125MTCX | ONSEMI |
 Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Kind of output: 3-state Supply voltage: 2...5.5V DC Quiescent current: 40µA Kind of package: reel; tape Manufacturer series: VHC Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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2SA2016-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89 Case: SOT89 Power dissipation: 1.3W Polarisation: bipolar Type of transistor: PNP Current gain: 200...560 Kind of package: reel; tape Frequency: 290MHz Collector current: 7A Mounting: SMD Collector-emitter voltage: 50V |
на замовлення 700 шт: термін постачання 14-30 дні (днів) |
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2SA2012-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89 Mounting: SMD Collector-emitter voltage: 30V Power dissipation: 3.5W Polarisation: bipolar Type of transistor: PNP Current gain: 200...560 Kind of package: reel; tape Case: SOT89 Frequency: 350MHz Collector current: 5A |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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2SA2040-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 8A Power dissipation: 1W Case: DPAK Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 330MHz |
на замовлення 363 шт: термін постачання 14-30 дні (днів) |
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2SA2153-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89 Mounting: SMD Collector current: 2A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 420MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA2013-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89 Mounting: SMD Collector current: 4A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 360MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA2029M3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.265W Collector-emitter voltage: 50V Current gain: 120...560 Polarisation: bipolar Case: SOT723 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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2SA2039-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 5A Power dissipation: 0.8W Case: DPAK Current gain: 200...560 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA2125-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.3W Case: SOT89 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 390MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA2125-TD-H | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.3W Case: SOT89 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 390MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA2126-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK Mounting: SMD Collector current: 3A Power dissipation: 0.8W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA2202-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89 Mounting: SMD Collector current: 2A Power dissipation: 1.3W Collector-emitter voltage: 100V Current gain: 200...400 Frequency: 300MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSV2SA2029M3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.265W Collector-emitter voltage: 50V Current gain: 120...560 Application: automotive industry Polarisation: bipolar Case: SOT723 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| N24C08UVTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; I2C; 1kx8bit; US8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 1kx8bit Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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MJD31CG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: tube Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MJD31CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
на замовлення 2193 шт: термін постачання 14-30 дні (днів) |
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MJD31CRLG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||
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NJVMJD31CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NJVMJD31CG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: tube Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NJVMJD31CRLG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TL431ILPRAG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR2H100SFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.68V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 8930 шт: термін постачання 14-30 дні (днів) |
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BZX79C3V6 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: THT Tolerance: ±5% Case: CASE017AG Kind of package: bulk Semiconductor structure: single diode Manufacturer series: BZX79C |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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MC14541BDTR2G | ONSEMI |
Category: RTC circuits Description: IC: digital; programmable timer; TSSOP14; -55÷125°C; 3÷18V; 10.5us Kind of integrated circuit: programmable timer Type of integrated circuit: digital Integrated circuit features: programmable Case: TSSOP14 Mounting: SMD Operating temperature: -55...125°C Delay time: 10.5µs Supply voltage: 3...18V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FSA3157L6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,SPDT; SPDT; Ch: 1; Outputs: 2; IN: 1 Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; SPDT Output configuration: SPDT Number of channels: 1 Number of outputs: 2 Mounting: SMD Resistance: 7Ω Operating temperature: -40...85°C Number of inputs: 1 |
на замовлення 4000 шт: термін постачання 14-30 дні (днів) |
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MC14504BDR2G | ONSEMI |
Category: Level translators Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16 Mounting: SMD Type of integrated circuit: digital Technology: CMOS Case: SO16 Kind of integrated circuit: level shifter Number of channels: 6 |
на замовлення 1479 шт: термін постачання 14-30 дні (днів) |
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MC14504BDG | ONSEMI |
Category: Level translators Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16; OUT: 6 Type of integrated circuit: digital Kind of integrated circuit: level shifter Number of channels: 6 Technology: CMOS Mounting: SMD Case: SO16 Number of outputs: 6 |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
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MC14504BDTR2G | ONSEMI |
Category: Level translators Description: IC: digital; level shifter; Ch: 6; CMOS; 3÷18VDC; SMD; TSSOP16 Type of integrated circuit: digital Kind of integrated circuit: level shifter Case: TSSOP16 Mounting: SMD Number of channels: 6 Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Technology: CMOS |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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MC14504BDTG | ONSEMI |
Category: Level translators Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16 Type of integrated circuit: digital Kind of integrated circuit: level shifter Case: TSSOP16 Mounting: SMD Number of channels: 6 Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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J111-D74Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 20mA Power dissipation: 0.625W Case: TO92 Gate-source voltage: -35V On-state resistance: 30Ω Mounting: THT Kind of package: Ammo Pack Gate current: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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J111-D26Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 20mA Power dissipation: 0.625W Case: TO92 Gate-source voltage: -35V On-state resistance: 30Ω Mounting: THT Kind of package: tape Gate current: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SZMMSZ3V3T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZxxTxG Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MRS1504T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A Mounting: SMD Max. forward impulse current: 50A Max. forward voltage: 1.02V Max. off-state voltage: 0.4kV Load current: 1.5A Max. load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: rectifying |
на замовлення 1535 шт: термін постачання 14-30 дні (днів) |
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FAN7602CMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: PMIC; PFC controller; SMD; SO8; -25÷125°C; reel,tape; 8÷25V Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Mounting: SMD Case: SO8 Operating temperature: -25...125°C Kind of package: reel; tape Supply voltage: 8...25V Topology: flyback |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN3100TSX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Case: SOT23-5 Technology: MillerDrive™ Number of channels: 1 Impulse rise time: 20ns Mounting: SMD Supply voltage: 4.5...18V DC Output current: -2.5...1.8A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Pulse fall time: 14ns Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver |
на замовлення 1440 шт: термін постачання 14-30 дні (днів) |
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FAN3100CSX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Mounting: SMD Supply voltage: 4.5...18V DC Output current: -1.8...2.5A Type of integrated circuit: driver Protection: undervoltage UVP Operating temperature: -40...125°C Technology: MillerDrive™ Pulse fall time: 14ns Kind of package: reel; tape Case: SOT23-5 Kind of integrated circuit: low-side; MOSFET gate driver Number of channels: 1 Impulse rise time: 20ns |
на замовлення 1978 шт: термін постачання 14-30 дні (днів) |
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FAN3100TMPX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; MLP6; Ch: 1 Case: MLP6 Technology: MillerDrive™ Number of channels: 1 Impulse rise time: 20ns Mounting: SMD Supply voltage: 4.5...18V DC Output current: -2.5...1.8A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Pulse fall time: 14ns Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver |
на замовлення 1450 шт: термін постачання 14-30 дні (днів) |
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| NCP43080AMTTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: WDFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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SZNUP3105LT1G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 35.6V; bidirectional; SOT23; reel,tape Type of diode: TVS Max. off-state voltage: 32V Breakdown voltage: 35.6V Semiconductor structure: bidirectional Mounting: SMD Kind of package: reel; tape Application: automotive industry Case: SOT23 |
на замовлення 2625 шт: термін постачання 14-30 дні (днів) |
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| NCP160BFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD Case: WLCSP4 Mounting: SMD Operating temperature: -40...125°C Voltage drop: 0.105V Output current: 0.25A Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5.14V Manufacturer series: NCP160 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||
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MC33174DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 1.8MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 2.1V/μs Integrated circuit features: low power Input offset voltage: 2mV Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC33172VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1.8MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 2.1V/μs Integrated circuit features: low power Input offset voltage: 6.5mV Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MC33178DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5MHz; Ch: 2; ±2÷18VDC,4÷36VDC; Micro8 Type of integrated circuit: operational amplifier Bandwidth: 5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 2...18V DC; 4...36V DC Case: Micro8 Operating temperature: -40...85°C Slew rate: 2V/μs Integrated circuit features: low power Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 600nA Input offset current: 60nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC33174DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 1.8MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 2.1V/μs Integrated circuit features: low power Input offset voltage: 6.5mV Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MC33174VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 1.8MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 2.1V/μs Integrated circuit features: low power Input offset voltage: 6.5mV Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA |
товару немає в наявності |
В кошику од. на суму грн. |
| 1N5222B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
товару немає в наявності
В кошику
од. на суму грн.
| 1N5226BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N52xxB
товару немає в наявності
В кошику
од. на суму грн.
| 1N5227B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N52xxB
товару немає в наявності
В кошику
од. на суму грн.
| 1N5223B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; bulk; 1N52xxB
Tolerance: ±5%
Mounting: THT
Manufacturer series: 1N52xxB
Power dissipation: 0.5W
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE017AG
Zener voltage: 2.7V
Type of diode: Zener
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; bulk; 1N52xxB
Tolerance: ±5%
Mounting: THT
Manufacturer series: 1N52xxB
Power dissipation: 0.5W
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE017AG
Zener voltage: 2.7V
Type of diode: Zener
товару немає в наявності
В кошику
од. на суму грн.
| 1N5227BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; CASE017AG; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N52xxB
товару немає в наявності
В кошику
од. на суму грн.
| 1N5229BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
товару немає в наявності
В кошику
од. на суму грн.
| FOD3125 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NTND31225CZTAG |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Power dissipation: 0.125W
Polarisation: unipolar
Drain current: 220/-127mA
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 1.5/5Ω
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Power dissipation: 0.125W
Polarisation: unipolar
Drain current: 220/-127mA
Kind of channel: enhancement
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 1.5/5Ω
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| NCP45560IMNTWG-H |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
товару немає в наявності
В кошику
од. на суму грн.
| NCP45560IMNTWG-L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 17A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 6.8mΩ
товару немає в наявності
В кошику
од. на суму грн.
| FQD2N90TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Mounting: SMD
Gate charge: 15nC
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 7.2Ω
Pulsed drain current: 6.8A
Power dissipation: 50W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Mounting: SMD
Gate charge: 15nC
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 7.2Ω
Pulsed drain current: 6.8A
Power dissipation: 50W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FQU2N90TU-AM002 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Mounting: THT
Gate charge: 15nC
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Pulsed drain current: 6.8A
Power dissipation: 50W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Mounting: THT
Gate charge: 15nC
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Pulsed drain current: 6.8A
Power dissipation: 50W
товару немає в наявності
В кошику
од. на суму грн.
| FQU2N90TU-WS |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Mounting: THT
Gate charge: 15nC
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Pulsed drain current: 6.8A
Power dissipation: 50W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Mounting: THT
Gate charge: 15nC
Polarisation: unipolar
Drain current: 1.08A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: IPAK
On-state resistance: 7.2Ω
Pulsed drain current: 6.8A
Power dissipation: 50W
товару немає в наявності
В кошику
од. на суму грн.
| NGTB35N65FL2WG |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Collector current: 35A
Collector-emitter voltage: 650V
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Collector current: 35A
Collector-emitter voltage: 650V
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 453.51 грн |
| 4+ | 283.57 грн |
| 10+ | 268.29 грн |
| LM7301SN1T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...32V DC
Case: SOT23-5
Operating temperature: -40...85°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 6mV
Kind of package: reel; tape
Input offset current: 55nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...32V DC
Case: SOT23-5
Operating temperature: -40...85°C
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 6mV
Kind of package: reel; tape
Input offset current: 55nA
товару немає в наявності
В кошику
од. на суму грн.
| 74VHC125MTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHC
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHC
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 2SA2016-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Case: SOT89
Power dissipation: 1.3W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Frequency: 290MHz
Collector current: 7A
Mounting: SMD
Collector-emitter voltage: 50V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Case: SOT89
Power dissipation: 1.3W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Frequency: 290MHz
Collector current: 7A
Mounting: SMD
Collector-emitter voltage: 50V
на замовлення 700 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.20 грн |
| 10+ | 48.65 грн |
| 50+ | 37.70 грн |
| 100+ | 33.54 грн |
| 200+ | 31.84 грн |
| 2SA2012-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Collector-emitter voltage: 30V
Power dissipation: 3.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Case: SOT89
Frequency: 350MHz
Collector current: 5A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Mounting: SMD
Collector-emitter voltage: 30V
Power dissipation: 3.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...560
Kind of package: reel; tape
Case: SOT89
Frequency: 350MHz
Collector current: 5A
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.37 грн |
| 2SA2040-TL-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 8A
Power dissipation: 1W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 8A
Power dissipation: 1W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
на замовлення 363 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 112.46 грн |
| 10+ | 66.90 грн |
| 26+ | 37.95 грн |
| 71+ | 35.83 грн |
| 2SA2153-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 420MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 420MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2013-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Collector current: 4A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Collector current: 4A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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од. на суму грн.
| 2SA2029M3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| 2SA2039-TL-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
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| 2SA2125-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
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В кошику
од. на суму грн.
| 2SA2125-TD-H |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 390MHz
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В кошику
од. на суму грн.
| 2SA2126-TL-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
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од. на суму грн.
| 2SA2202-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 300MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 300MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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В кошику
од. на суму грн.
| NSV2SA2029M3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
товару немає в наявності
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од. на суму грн.
| N24C08UVTG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 1kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 1kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| MJD31CG |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
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од. на суму грн.
| MJD31CT4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
на замовлення 2193 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.59 грн |
| 10+ | 44.66 грн |
| 20+ | 39.05 грн |
| 50+ | 32.35 грн |
| 54+ | 18.08 грн |
| 148+ | 17.07 грн |
| MJD31CRLG |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| NJVMJD31CT4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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од. на суму грн.
| NJVMJD31CG |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
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В кошику
од. на суму грн.
| NJVMJD31CRLG |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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од. на суму грн.
| TL431ILPRAG |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| MBR2H100SFT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.68V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.68V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 8930 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 41.14 грн |
| 15+ | 30.22 грн |
| 17+ | 26.06 грн |
| 25+ | 21.06 грн |
| 100+ | 15.71 грн |
| 116+ | 8.41 грн |
| 319+ | 7.90 грн |
| BZX79C3V6 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Case: CASE017AG
Kind of package: bulk
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: THT
Tolerance: ±5%
Case: CASE017AG
Kind of package: bulk
Semiconductor structure: single diode
Manufacturer series: BZX79C
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| MC14541BDTR2G |
|
Виробник: ONSEMI
Category: RTC circuits
Description: IC: digital; programmable timer; TSSOP14; -55÷125°C; 3÷18V; 10.5us
Kind of integrated circuit: programmable timer
Type of integrated circuit: digital
Integrated circuit features: programmable
Case: TSSOP14
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 10.5µs
Supply voltage: 3...18V
Category: RTC circuits
Description: IC: digital; programmable timer; TSSOP14; -55÷125°C; 3÷18V; 10.5us
Kind of integrated circuit: programmable timer
Type of integrated circuit: digital
Integrated circuit features: programmable
Case: TSSOP14
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 10.5µs
Supply voltage: 3...18V
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| FSA3157L6X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,SPDT; SPDT; Ch: 1; Outputs: 2; IN: 1
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; SPDT
Output configuration: SPDT
Number of channels: 1
Number of outputs: 2
Mounting: SMD
Resistance: 7Ω
Operating temperature: -40...85°C
Number of inputs: 1
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,SPDT; SPDT; Ch: 1; Outputs: 2; IN: 1
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; SPDT
Output configuration: SPDT
Number of channels: 1
Number of outputs: 2
Mounting: SMD
Resistance: 7Ω
Operating temperature: -40...85°C
Number of inputs: 1
на замовлення 4000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 12.07 грн |
| MC14504BDR2G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Mounting: SMD
Type of integrated circuit: digital
Technology: CMOS
Case: SO16
Kind of integrated circuit: level shifter
Number of channels: 6
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Mounting: SMD
Type of integrated circuit: digital
Technology: CMOS
Case: SO16
Kind of integrated circuit: level shifter
Number of channels: 6
на замовлення 1479 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 41.14 грн |
| 13+ | 33.28 грн |
| 14+ | 30.39 грн |
| 25+ | 27.68 грн |
| MC14504BDG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16; OUT: 6
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Number of outputs: 6
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16; OUT: 6
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Number of outputs: 6
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.80 грн |
| 12+ | 38.21 грн |
| MC14504BDTR2G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; 3÷18VDC; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Case: TSSOP16
Mounting: SMD
Number of channels: 6
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Technology: CMOS
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; 3÷18VDC; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Case: TSSOP16
Mounting: SMD
Number of channels: 6
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Technology: CMOS
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| MC14504BDTG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Case: TSSOP16
Mounting: SMD
Number of channels: 6
Technology: CMOS
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Case: TSSOP16
Mounting: SMD
Number of channels: 6
Technology: CMOS
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| J111-D74Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: -35V
On-state resistance: 30Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: -35V
On-state resistance: 30Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
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| J111-D26Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: -35V
On-state resistance: 30Ω
Mounting: THT
Kind of package: tape
Gate current: 50mA
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: -35V
On-state resistance: 30Ω
Mounting: THT
Kind of package: tape
Gate current: 50mA
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| SZMMSZ3V3T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
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| MRS1504T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 1.02V
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 1.02V
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
на замовлення 1535 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.89 грн |
| 43+ | 10.02 грн |
| 45+ | 9.59 грн |
| 50+ | 9.08 грн |
| 100+ | 8.83 грн |
| 500+ | 8.74 грн |
| FAN7602CMX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: PMIC; PFC controller; SMD; SO8; -25÷125°C; reel,tape; 8÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Mounting: SMD
Case: SO8
Operating temperature: -25...125°C
Kind of package: reel; tape
Supply voltage: 8...25V
Topology: flyback
Category: Buffers, transceivers, drivers
Description: IC: PMIC; PFC controller; SMD; SO8; -25÷125°C; reel,tape; 8÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Mounting: SMD
Case: SO8
Operating temperature: -25...125°C
Kind of package: reel; tape
Supply voltage: 8...25V
Topology: flyback
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| FAN3100TSX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Number of channels: 1
Impulse rise time: 20ns
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -2.5...1.8A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Pulse fall time: 14ns
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Number of channels: 1
Impulse rise time: 20ns
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -2.5...1.8A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Pulse fall time: 14ns
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
на замовлення 1440 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 64.00 грн |
| 9+ | 50.43 грн |
| 10+ | 45.76 грн |
| 22+ | 45.51 грн |
| 25+ | 41.43 грн |
| 59+ | 41.35 грн |
| FAN3100CSX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -1.8...2.5A
Type of integrated circuit: driver
Protection: undervoltage UVP
Operating temperature: -40...125°C
Technology: MillerDrive™
Pulse fall time: 14ns
Kind of package: reel; tape
Case: SOT23-5
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 1
Impulse rise time: 20ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -1.8...2.5A
Type of integrated circuit: driver
Protection: undervoltage UVP
Operating temperature: -40...125°C
Technology: MillerDrive™
Pulse fall time: 14ns
Kind of package: reel; tape
Case: SOT23-5
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 1
Impulse rise time: 20ns
на замовлення 1978 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 64.00 грн |
| 10+ | 42.71 грн |
| 25+ | 39.90 грн |
| FAN3100TMPX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; MLP6; Ch: 1
Case: MLP6
Technology: MillerDrive™
Number of channels: 1
Impulse rise time: 20ns
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -2.5...1.8A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Pulse fall time: 14ns
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; MLP6; Ch: 1
Case: MLP6
Technology: MillerDrive™
Number of channels: 1
Impulse rise time: 20ns
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -2.5...1.8A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Pulse fall time: 14ns
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
на замовлення 1450 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 79.55 грн |
| 10+ | 53.06 грн |
| 21+ | 46.70 грн |
| 50+ | 45.51 грн |
| 58+ | 44.15 грн |
| 100+ | 42.62 грн |
| 250+ | 42.45 грн |
| NCP43080AMTTWG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| SZNUP3105LT1G |
|
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 35.6V; bidirectional; SOT23; reel,tape
Type of diode: TVS
Max. off-state voltage: 32V
Breakdown voltage: 35.6V
Semiconductor structure: bidirectional
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Case: SOT23
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 35.6V; bidirectional; SOT23; reel,tape
Type of diode: TVS
Max. off-state voltage: 32V
Breakdown voltage: 35.6V
Semiconductor structure: bidirectional
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Case: SOT23
на замовлення 2625 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 17.37 грн |
| 29+ | 14.77 грн |
| 31+ | 13.92 грн |
| 33+ | 13.16 грн |
| NCP160BFCS514T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Case: WLCSP4
Mounting: SMD
Operating temperature: -40...125°C
Voltage drop: 0.105V
Output current: 0.25A
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Manufacturer series: NCP160
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Case: WLCSP4
Mounting: SMD
Operating temperature: -40...125°C
Voltage drop: 0.105V
Output current: 0.25A
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Manufacturer series: NCP160
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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Мінімальне замовлення: 5 шт
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| MC33174DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 2.1V/μs
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 2.1V/μs
Integrated circuit features: low power
Input offset voltage: 2mV
Kind of package: reel; tape
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| MC33172VDR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 2.1V/μs
Integrated circuit features: low power
Input offset voltage: 6.5mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 2.1V/μs
Integrated circuit features: low power
Input offset voltage: 6.5mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
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| MC33178DMR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; ±2÷18VDC,4÷36VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 2...18V DC; 4...36V DC
Case: Micro8
Operating temperature: -40...85°C
Slew rate: 2V/μs
Integrated circuit features: low power
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 600nA
Input offset current: 60nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; ±2÷18VDC,4÷36VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 2...18V DC; 4...36V DC
Case: Micro8
Operating temperature: -40...85°C
Slew rate: 2V/μs
Integrated circuit features: low power
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 600nA
Input offset current: 60nA
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| MC33174DTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 2.1V/μs
Integrated circuit features: low power
Input offset voltage: 6.5mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 2.1V/μs
Integrated circuit features: low power
Input offset voltage: 6.5mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
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| MC33174VDR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 2.1V/μs
Integrated circuit features: low power
Input offset voltage: 6.5mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 2.1V/μs
Integrated circuit features: low power
Input offset voltage: 6.5mV
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
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