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SMMBTA06LT3G SMMBTA06LT3G ONSEMI mmbta05lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SMMBTA06WT1G ONSEMI mmbta06wt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SMMBTA06WT3G ONSEMI mmbta06wt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSR1020MW2T1G ONSEMI nsr1020mw2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD323
Mounting: SMD
Max. forward voltage: 0.54V
Load current: 1A
Max. off-state voltage: 20V
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BU407 BU407 ONSEMI pVersion=0046&contRep=ZT&docId=E20E0E6CAF236CF1A303005056AB0C4F&compId=BU407.pdf?ci_sign=513d047b64aa580c0c4de5dac79c619888a1546d Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 330V; 7A; 60W; TO220
Case: TO220
Type of transistor: NPN
Mounting: THT
Collector current: 7A
Power: 60W
Collector-emitter voltage: 330V
Polarisation: bipolar
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BD17516STU BD17516STU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA6F276F3796620CE&compId=BD175_177_179.pdf?ci_sign=bd3c0a5af9d965e72dbdee0e8916fc528cb761ce Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 30W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
Collector-emitter voltage: 45V
Current gain: 100...250
Polarisation: bipolar
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MC78M06CDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 6V; 0.5A; DPAK; SMD; reel,tape
Kind of voltage regulator: fixed; linear
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.5A
Number of channels: 1
Output voltage: 6V
Case: DPAK
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NXH030F120M3F1PTG ONSEMI nxh030f120m3f1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 38A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 38A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 68.2mΩ
Pulsed drain current: 115A
Power dissipation: 100W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
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MC74HC4538ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62C536A2FC0D3&compId=MC74HC4538A-D.pdf?ci_sign=b377db161c404a87da515d5dfd6c1d6357edec74 Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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NLV74HC4538ADR2G NLV74HC4538ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6356D606740D3&compId=MC74HC4538A-D.pdf?ci_sign=2eb53b963bd8ff40c1adfea8b8913f074fe47331 Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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FDMS86150ET100 ONSEMI fdms86150et100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Pulsed drain current: 617A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
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1N459ATR ONSEMI FAIRS22995-1.pdf?t.download=true&u=5oefqw 1n459a-d.pdf Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; reel,tape; DO35
Case: DO35
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.5A
Max. off-state voltage: 200V
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1N459A ONSEMI 1n459a-d.pdf Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; bulk; DO35
Case: DO35
Mounting: THT
Kind of package: bulk
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.5A
Max. off-state voltage: 200V
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MMSZ5V1T1G MMSZ5V1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 8936 шт:
термін постачання 21-30 дні (днів)
50+8.57 грн
73+5.49 грн
104+3.85 грн
121+3.29 грн
500+2.29 грн
629+1.49 грн
1727+1.41 грн
6000+1.35 грн
Мінімальне замовлення: 50
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MM3Z5V1ST1G MM3Z5V1ST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 940 шт:
термін постачання 21-30 дні (днів)
56+7.71 грн
72+5.57 грн
114+3.52 грн
141+2.83 грн
500+1.79 грн
657+1.42 грн
Мінімальне замовлення: 56
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MM3Z5V1T1G MM3Z5V1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 1261 шт:
термін постачання 21-30 дні (днів)
61+7.05 грн
99+4.06 грн
148+2.69 грн
177+2.25 грн
250+1.82 грн
500+1.58 грн
828+1.13 грн
Мінімальне замовлення: 61
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MM5Z5V1ST1G MM5Z5V1ST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C3FBB19B03C0D6&compId=MM5ZxxxST1G.PDF?ci_sign=66af86ac46d65e253256a3f4a774672b6ec870e7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
на замовлення 898 шт:
термін постачання 21-30 дні (днів)
36+11.99 грн
44+9.23 грн
53+7.56 грн
93+4.28 грн
118+3.40 грн
342+2.74 грн
500+2.49 грн
Мінімальне замовлення: 36
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MM5Z5V6ST1G MM5Z5V6ST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C3FBB19B03C0D6&compId=MM5ZxxxST1G.PDF?ci_sign=66af86ac46d65e253256a3f4a774672b6ec870e7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
56+7.71 грн
74+5.41 грн
94+4.23 грн
141+2.82 грн
250+2.43 грн
Мінімальне замовлення: 56
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MM3Z5V1B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2D18229E340D3&compId=MM3Z9V1B.PDF?ci_sign=65dd7bc3479acba487a5d8985c5a4f52153fb609 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Leakage current: 1.8µA
на замовлення 1515 шт:
термін постачання 21-30 дні (днів)
59+7.34 грн
79+5.09 грн
90+4.45 грн
131+3.04 грн
153+2.60 грн
467+2.00 грн
500+1.90 грн
1000+1.82 грн
Мінімальне замовлення: 59
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LM337T LM337T ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8EF40D180575EA&compId=LM337T-FAI.pdf?ci_sign=a561dbb87dd0053a3aba1644631a4b648ea1c670 Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -37...-1.2V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Kind of package: tube
Heatsink thickness: 0.51...0.61mm
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NCP731ADN500R2G ONSEMI ncp731-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; MSOP8; SMD
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Output current: 0.15A
Number of channels: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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MC14018BDG MC14018BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D7597C0D3&compId=MC14018B-D.pdf?ci_sign=05f1a9822cc80f00ab3ecd472cee4d1d42dcadb8 Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube
Type of integrated circuit: digital
Kind of integrated circuit: counter; divide by N
Case: SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
10+46.26 грн
11+38.02 грн
Мінімальне замовлення: 10
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MC14018BDR2G MC14018BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759900D3&compId=MC14018B-D.pdf?ci_sign=30f91d0bdbbb5b91cfa60a97e577cad4d508e6c6 Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: counter; divide by N
Supply voltage: 3...18V DC
Technology: CMOS
Case: SOIC16
Kind of package: reel; tape
Mounting: SMD
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MC14011UBDG MC14011UBDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
на замовлення 550 шт:
термін постачання 21-30 дні (днів)
16+27.41 грн
22+18.14 грн
25+16.47 грн
55+15.27 грн
89+10.58 грн
243+10.02 грн
Мінімальне замовлення: 16
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MC14011BDR2G MC14011BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 100ns
Family: HEF4000B
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MC14011UBDR2G MC14011UBDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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55GN01CA-TB-E 55GN01CA-TB-E ONSEMI 55gn01ca-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 70mA
Power dissipation: 0.2W
Mounting: SMD
Collector-emitter voltage: 10V
Current gain: 100...180
Polarisation: bipolar
Kind of transistor: RF
Frequency: 3...5.5GHz
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55GN01FA-TL-H ONSEMI 55gn01fa.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.25W; SC81
Case: SC81
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 70mA
Power dissipation: 0.25W
Mounting: SMD
Collector-emitter voltage: 10V
Current gain: 100...160
Polarisation: bipolar
Application: automotive industry
Kind of transistor: RF
Frequency: 3...5.5GHz
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FQB33N10LTM FQB33N10LTM ONSEMI fqb33n10l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 40nC
Kind of package: reel; tape
Pulsed drain current: 132A
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FQB33N10TM FQB33N10TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781972E12E7C5E259&compId=FQB33N10.pdf?ci_sign=8990e0662a57f042b69c93ae1340831d24cc26ec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 51nC
Kind of package: reel; tape
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FOD3150 FOD3150 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2EB1E34F00C7&compId=FOD3150.pdf?ci_sign=d8ceb18e6c8410f6730aa696f9ae8e1f2574b4d0 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
на замовлення 393 шт:
термін постачання 21-30 дні (днів)
5+90.81 грн
6+75.57 грн
15+64.46 грн
40+60.94 грн
250+58.87 грн
Мінімальне замовлення: 5
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H11F3M H11F3M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C020DA40B60D6&compId=H11F3M.pdf?ci_sign=7fdda23edd7f61656e7c6bfb5d2c9ac2ba2f73cd Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
на замовлення 821 шт:
термін постачання 21-30 дні (днів)
2+297.27 грн
6+180.58 грн
15+170.24 грн
100+167.05 грн
500+163.87 грн
Мінімальне замовлення: 2
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FDC642P ONSEMI fdc642p-d.pdf ONSM-S-A0003579657-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NSR20F30NXT5G
+1
 		NSR20F30NXT5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BDF6FA86C160CE&compId=NSR20F30NXT5G.PDF?ci_sign=a90ff8430566942f0be3aa52ee505ea9dfb3e7e0 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DSN0603-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. load current: 4A
Max. forward impulse current: 28A
Kind of package: reel; tape
на замовлення 966 шт:
термін постачання 21-30 дні (днів)
10+44.55 грн
14+28.80 грн
50+18.85 грн
137+17.82 грн
500+17.34 грн
Мінімальне замовлення: 10
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UJ4C075018K3S ONSEMI uj4c075018k3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 60A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 60A
Pulsed drain current: 205A
Power dissipation: 385W
Case: TO247-3
Gate-source voltage: -25...25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
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FOD4116SD ONSEMI FAIR-S-A0001476775-1.pdf?t.download=true&u=5oefqw fod4118-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4116
Kind of output: triac; zero voltage crossing driver
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Turn-off time: 52µs
Turn-on time: 60µs
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FOD4116SDV ONSEMI fod4118-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4116
Kind of output: triac; zero voltage crossing driver
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Conform to the norm: VDE
Turn-off time: 52µs
Turn-on time: 60µs
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NTB004N10G ONSEMI ntb004n10g-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 201A; Idm: 3002A; 340W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 175nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 201A
Power dissipation: 340W
Pulsed drain current: 3002A
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NCP781BMN050TAG ONSEMI ncp781-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 100mA; DFN6; SMD; NCP781
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Voltage drop: 7V
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NCP781BMN033TAG ONSEMI ncp781-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 100mA; DFN6; SMD; NCP781
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 3.3V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Voltage drop: 6.5V
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NCP781BMNADJTAG ONSEMI ncp781-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.23÷15V; 100mA; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.23...15V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
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NTMTSC002N10MCTXG ONSEMI ntmtsc002n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 236A; Idm: 900A; 128W; TDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 236A
Pulsed drain current: 900A
Power dissipation: 128W
Case: TDFNW8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS002N10MCLT1G ONSEMI ntmfs002n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 175A; Idm: 1536A; 94W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 175A
Pulsed drain current: 1536A
Power dissipation: 94W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 97nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTS002N10MCTXG ONSEMI ntmts002n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 236A; Idm: 900A; 128W; TDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 236A
Pulsed drain current: 900A
Power dissipation: 128W
Case: TDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFWS002N10MCLT1G ONSEMI nvmfws002n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 177A
Pulsed drain current: 900A
Power dissipation: 97W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 97nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQU2N100TU ONSEMI fqu2n100-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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LM285D-2.5R2G LM285D-2.5R2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD96D74117E34360D3&compId=LM285_LM385B.PDF?ci_sign=f66be552eb736c587c9a455a7f00f90948b3196b Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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SZBZX84C3V6ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C3V6LT1G SZBZX84C3V6LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C3V9ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C3V9LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
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KSD5041RTA KSD5041RTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE47631A00620D6&compId=KSD5041.pdf?ci_sign=997635a7f1bce6e5b02298a59e5b785187039794 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 340...600
Frequency: 150MHz
Kind of package: Ammo Pack
Polarisation: bipolar
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KSD1408YTU KSD1408YTU ONSEMI ksd1408-d.pdf FAIRS17863-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP
Case: TO220FP
Type of transistor: NPN
Mounting: THT
Power dissipation: 25W
Collector current: 4A
Collector-emitter voltage: 80V
Current gain: 120...240
Frequency: 8MHz
Kind of package: tube
Polarisation: bipolar
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KSD560YTU KSD560YTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB12CE150C8469&compId=KSD560YTU.pdf?ci_sign=cc78553356d548bcbe6c0001713524f2383d56b7 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Case: TO220AB
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 100V
Kind of package: tube
Polarisation: bipolar
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UJ3D1210KSD ONSEMI da008690 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Power dissipation: 13W
Max. forward voltage: 1200V
Load current: 5A
Max. forward impulse current: 63A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: single diode
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UJ3D06560KSD ONSEMI DS_UJ3D06560KSD.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-3; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Max. forward voltage: 650V
Load current: 30A
Max. load current: 107.2A
Max. forward impulse current: 1.25kA
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: common cathode; double
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SZ1SMB5931BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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NCP3420DR2G NCP3420DR2G ONSEMI ncp3420-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
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1N4148WS 1N4148WS ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE581BD9C6DCC794469&compId=1N4148WS.pdf?ci_sign=5d91db83646fc46518beb8bfbde45235995582e3 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
на замовлення 2410 шт:
термін постачання 21-30 дні (днів)
72+6.00 грн
84+4.77 грн
93+4.30 грн
123+3.25 грн
139+2.87 грн
500+2.18 грн
1000+1.93 грн
Мінімальне замовлення: 72
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FDP027N08B-F102 ONSEMI fdp027n08b-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 223A
Pulsed drain current: 892A
Power dissipation: 246W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
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SMMBTA06LT3G mmbta05lt1-d.pdf
SMMBTA06LT3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SMMBTA06WT1G mmbta06wt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SMMBTA06WT3G mmbta06wt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSR1020MW2T1G nsr1020mw2t1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD323
Mounting: SMD
Max. forward voltage: 0.54V
Load current: 1A
Max. off-state voltage: 20V
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BU407 pVersion=0046&contRep=ZT&docId=E20E0E6CAF236CF1A303005056AB0C4F&compId=BU407.pdf?ci_sign=513d047b64aa580c0c4de5dac79c619888a1546d
BU407
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 330V; 7A; 60W; TO220
Case: TO220
Type of transistor: NPN
Mounting: THT
Collector current: 7A
Power: 60W
Collector-emitter voltage: 330V
Polarisation: bipolar
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BD17516STU pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA6F276F3796620CE&compId=BD175_177_179.pdf?ci_sign=bd3c0a5af9d965e72dbdee0e8916fc528cb761ce
BD17516STU
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 30W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
Collector-emitter voltage: 45V
Current gain: 100...250
Polarisation: bipolar
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MC78M06CDTRKG mc78m00-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 6V; 0.5A; DPAK; SMD; reel,tape
Kind of voltage regulator: fixed; linear
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.5A
Number of channels: 1
Output voltage: 6V
Case: DPAK
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NXH030F120M3F1PTG nxh030f120m3f1-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 38A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 38A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 68.2mΩ
Pulsed drain current: 115A
Power dissipation: 100W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
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MC74HC4538ADTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62C536A2FC0D3&compId=MC74HC4538A-D.pdf?ci_sign=b377db161c404a87da515d5dfd6c1d6357edec74
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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NLV74HC4538ADR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6356D606740D3&compId=MC74HC4538A-D.pdf?ci_sign=2eb53b963bd8ff40c1adfea8b8913f074fe47331
NLV74HC4538ADR2G
Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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FDMS86150ET100 fdms86150et100-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Pulsed drain current: 617A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
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1N459ATR FAIRS22995-1.pdf?t.download=true&u=5oefqw 1n459a-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; reel,tape; DO35
Case: DO35
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.5A
Max. off-state voltage: 200V
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1N459A 1n459a-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; bulk; DO35
Case: DO35
Mounting: THT
Kind of package: bulk
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Load current: 0.5A
Max. off-state voltage: 200V
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MMSZ5V1T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f
MMSZ5V1T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 8936 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.57 грн
73+5.49 грн
104+3.85 грн
121+3.29 грн
500+2.29 грн
629+1.49 грн
1727+1.41 грн
6000+1.35 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
MM3Z5V1ST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7
MM3Z5V1ST1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
на замовлення 940 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.71 грн
72+5.57 грн
114+3.52 грн
141+2.83 грн
500+1.79 грн
657+1.42 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
MM3Z5V1T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z5V1T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 1261 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
61+7.05 грн
99+4.06 грн
148+2.69 грн
177+2.25 грн
250+1.82 грн
500+1.58 грн
828+1.13 грн
Мінімальне замовлення: 61
В кошику  од. на суму  грн.
MM5Z5V1ST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C3FBB19B03C0D6&compId=MM5ZxxxST1G.PDF?ci_sign=66af86ac46d65e253256a3f4a774672b6ec870e7
MM5Z5V1ST1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
на замовлення 898 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.99 грн
44+9.23 грн
53+7.56 грн
93+4.28 грн
118+3.40 грн
342+2.74 грн
500+2.49 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
MM5Z5V6ST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C3FBB19B03C0D6&compId=MM5ZxxxST1G.PDF?ci_sign=66af86ac46d65e253256a3f4a774672b6ec870e7
MM5Z5V6ST1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.71 грн
74+5.41 грн
94+4.23 грн
141+2.82 грн
250+2.43 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
MM3Z5V1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2D18229E340D3&compId=MM3Z9V1B.PDF?ci_sign=65dd7bc3479acba487a5d8985c5a4f52153fb609
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Leakage current: 1.8µA
на замовлення 1515 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
59+7.34 грн
79+5.09 грн
90+4.45 грн
131+3.04 грн
153+2.60 грн
467+2.00 грн
500+1.90 грн
1000+1.82 грн
Мінімальне замовлення: 59
В кошику  од. на суму  грн.
LM337T pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8EF40D180575EA&compId=LM337T-FAI.pdf?ci_sign=a561dbb87dd0053a3aba1644631a4b648ea1c670
LM337T
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -37÷-1.2V; 1.5A; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -37...-1.2V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Kind of package: tube
Heatsink thickness: 0.51...0.61mm
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NCP731ADN500R2G ncp731-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; MSOP8; SMD
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Output current: 0.15A
Number of channels: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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MC14018BDG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D7597C0D3&compId=MC14018B-D.pdf?ci_sign=05f1a9822cc80f00ab3ecd472cee4d1d42dcadb8
MC14018BDG
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube
Type of integrated circuit: digital
Kind of integrated circuit: counter; divide by N
Case: SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+46.26 грн
11+38.02 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MC14018BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759900D3&compId=MC14018B-D.pdf?ci_sign=30f91d0bdbbb5b91cfa60a97e577cad4d508e6c6
MC14018BDR2G
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: counter; divide by N
Supply voltage: 3...18V DC
Technology: CMOS
Case: SOIC16
Kind of package: reel; tape
Mounting: SMD
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MC14011UBDG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14011UBDG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
на замовлення 550 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.41 грн
22+18.14 грн
25+16.47 грн
55+15.27 грн
89+10.58 грн
243+10.02 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
MC14011BDR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14011BDR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 100ns
Family: HEF4000B
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MC14011UBDR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14011UBDR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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55GN01CA-TB-E 55gn01ca-d.pdf
55GN01CA-TB-E
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 70mA
Power dissipation: 0.2W
Mounting: SMD
Collector-emitter voltage: 10V
Current gain: 100...180
Polarisation: bipolar
Kind of transistor: RF
Frequency: 3...5.5GHz
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55GN01FA-TL-H 55gn01fa.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.25W; SC81
Case: SC81
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 70mA
Power dissipation: 0.25W
Mounting: SMD
Collector-emitter voltage: 10V
Current gain: 100...160
Polarisation: bipolar
Application: automotive industry
Kind of transistor: RF
Frequency: 3...5.5GHz
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FQB33N10LTM fqb33n10l-d.pdf
FQB33N10LTM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 40nC
Kind of package: reel; tape
Pulsed drain current: 132A
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FQB33N10TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED781972E12E7C5E259&compId=FQB33N10.pdf?ci_sign=8990e0662a57f042b69c93ae1340831d24cc26ec
FQB33N10TM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 51nC
Kind of package: reel; tape
товару немає в наявності
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FOD3150 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2EB1E34F00C7&compId=FOD3150.pdf?ci_sign=d8ceb18e6c8410f6730aa696f9ae8e1f2574b4d0
FOD3150
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
на замовлення 393 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+90.81 грн
6+75.57 грн
15+64.46 грн
40+60.94 грн
250+58.87 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
H11F3M pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C020DA40B60D6&compId=H11F3M.pdf?ci_sign=7fdda23edd7f61656e7c6bfb5d2c9ac2ba2f73cd
H11F3M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
на замовлення 821 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+297.27 грн
6+180.58 грн
15+170.24 грн
100+167.05 грн
500+163.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDC642P fdc642p-d.pdf ONSM-S-A0003579657-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NSR20F30NXT5G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BDF6FA86C160CE&compId=NSR20F30NXT5G.PDF?ci_sign=a90ff8430566942f0be3aa52ee505ea9dfb3e7e0
NSR20F30NXT5G
+1
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DSN0603-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. load current: 4A
Max. forward impulse current: 28A
Kind of package: reel; tape
на замовлення 966 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+44.55 грн
14+28.80 грн
50+18.85 грн
137+17.82 грн
500+17.34 грн
Мінімальне замовлення: 10
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UJ4C075018K3S uj4c075018k3s-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 60A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 60A
Pulsed drain current: 205A
Power dissipation: 385W
Case: TO247-3
Gate-source voltage: -25...25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
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FOD4116SD FAIR-S-A0001476775-1.pdf?t.download=true&u=5oefqw fod4118-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4116
Kind of output: triac; zero voltage crossing driver
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Turn-off time: 52µs
Turn-on time: 60µs
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FOD4116SDV fod4118-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4116
Kind of output: triac; zero voltage crossing driver
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Conform to the norm: VDE
Turn-off time: 52µs
Turn-on time: 60µs
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NTB004N10G ntb004n10g-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 201A; Idm: 3002A; 340W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 175nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 201A
Power dissipation: 340W
Pulsed drain current: 3002A
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NCP781BMN050TAG ncp781-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 100mA; DFN6; SMD; NCP781
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Voltage drop: 7V
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NCP781BMN033TAG ncp781-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 100mA; DFN6; SMD; NCP781
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 3.3V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Voltage drop: 6.5V
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NCP781BMNADJTAG ncp781-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.23÷15V; 100mA; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.23...15V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
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NTMTSC002N10MCTXG ntmtsc002n10mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 236A; Idm: 900A; 128W; TDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 236A
Pulsed drain current: 900A
Power dissipation: 128W
Case: TDFNW8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS002N10MCLT1G ntmfs002n10mcl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 175A; Idm: 1536A; 94W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 175A
Pulsed drain current: 1536A
Power dissipation: 94W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 97nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTS002N10MCTXG ntmts002n10mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 236A; Idm: 900A; 128W; TDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 236A
Pulsed drain current: 900A
Power dissipation: 128W
Case: TDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFWS002N10MCLT1G nvmfws002n10mcl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 177A
Pulsed drain current: 900A
Power dissipation: 97W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 97nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQU2N100TU fqu2n100-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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LM285D-2.5R2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDD96D74117E34360D3&compId=LM285_LM385B.PDF?ci_sign=f66be552eb736c587c9a455a7f00f90948b3196b
LM285D-2.5R2G
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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SZBZX84C3V6ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C3V6LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
SZBZX84C3V6LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C3V9ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C3V9LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
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KSD5041RTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE47631A00620D6&compId=KSD5041.pdf?ci_sign=997635a7f1bce6e5b02298a59e5b785187039794
KSD5041RTA
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 340...600
Frequency: 150MHz
Kind of package: Ammo Pack
Polarisation: bipolar
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KSD1408YTU ksd1408-d.pdf FAIRS17863-1.pdf?t.download=true&u=5oefqw
KSD1408YTU
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP
Case: TO220FP
Type of transistor: NPN
Mounting: THT
Power dissipation: 25W
Collector current: 4A
Collector-emitter voltage: 80V
Current gain: 120...240
Frequency: 8MHz
Kind of package: tube
Polarisation: bipolar
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KSD560YTU pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB12CE150C8469&compId=KSD560YTU.pdf?ci_sign=cc78553356d548bcbe6c0001713524f2383d56b7
KSD560YTU
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Case: TO220AB
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 100V
Kind of package: tube
Polarisation: bipolar
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UJ3D1210KSD da008690
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Power dissipation: 13W
Max. forward voltage: 1200V
Load current: 5A
Max. forward impulse current: 63A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: single diode
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UJ3D06560KSD DS_UJ3D06560KSD.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-3; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Max. forward voltage: 650V
Load current: 30A
Max. load current: 107.2A
Max. forward impulse current: 1.25kA
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: common cathode; double
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SZ1SMB5931BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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NCP3420DR2G ncp3420-d.pdf
NCP3420DR2G
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
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1N4148WS pVersion=0046&contRep=ZT&docId=005056AB752F1EE581BD9C6DCC794469&compId=1N4148WS.pdf?ci_sign=5d91db83646fc46518beb8bfbde45235995582e3
1N4148WS
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
на замовлення 2410 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.00 грн
84+4.77 грн
93+4.30 грн
123+3.25 грн
139+2.87 грн
500+2.18 грн
1000+1.93 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
FDP027N08B-F102 fdp027n08b-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 223A
Pulsed drain current: 892A
Power dissipation: 246W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
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