| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| MOC3051SR2M | ONSEMI |
 Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC305X Kind of package: reel; tape Output voltage: 600V |
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MOC3051TVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC305X Kind of package: tube Conform to the norm: VDE Output voltage: 600V |
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MOC3051VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC305X Kind of package: tube Conform to the norm: VDE Output voltage: 600V |
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В кошику од. на суму грн. | ||||||||||||||||||
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FQB33N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Case: D2PAK Gate-source voltage: ±25V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 52mΩ Power dissipation: 127W Gate charge: 51nC Technology: QFET® |
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FQB33N10LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 55mΩ Pulsed drain current: 132A Power dissipation: 127W Gate charge: 40nC Technology: QFET® |
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В кошику од. на суму грн. | ||||||||||||||||||
| FAN3852UC16X | ONSEMI |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; PDM; microphone preamplifier; 1.64÷3.63VDC Supply voltage: 1.64...3.63V DC Kind of package: reel; tape Case: WLCSP6 Interface: PDM Number of channels: 1 Mounting: SMD Type of integrated circuit: audio amplifier Operating temperature: -40...85°C Integrated circuit features: microphone preamplifier |
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В кошику од. на суму грн. | |||||||||||||||||||
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ISL9V3040D3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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ISL9V3040D3ST-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
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В кошику од. на суму грн. | ||||||||||||||||||
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MC74ACT161DR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL Type of integrated circuit: digital Kind of integrated circuit: asynchronous reset; binary counter Number of channels: 1 Number of inputs: 9 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: SOIC16 Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCP45524IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: high Control voltage: 0.5...13.5V DC Output current: 6A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN8 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 31.7mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP45524IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: low Control voltage: 0.5...13.5V DC Output current: 6A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN8 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 31.7mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC33275ST-3.3T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Tolerance: ±1% Manufacturer series: MC33275 Input voltage: 0...20V Voltage drop: 1.1V Operating temperature: -40...125°C |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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MC33275ST-5.0T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.3A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
на замовлення 3568 шт: термін постачання 14-30 дні (днів) |
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MC33275DT-3.3RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC33275D-3.0G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.3A Case: SO8 Mounting: SMD Kind of package: tube Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC33275D-3.0R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.3A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC33275D-3.3R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC33275D-5.0R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.3A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC33275DT-5.0RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.3A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC33275MN-3.0R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.3A Case: DFN8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NTBG160N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 78A Power dissipation: 68W Gate charge: 33.8nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 13.7A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.365Ω |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
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NTHL160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 12A On-state resistance: 0.16Ω Power dissipation: 59W Gate charge: 34nC Polarisation: unipolar Technology: SiC Kind of channel: enhancement Gate-source voltage: -15...25V Kind of package: tube Case: TO247-3 Mounting: THT Pulsed drain current: 69A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NVBG160N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 13.7A On-state resistance: 0.365Ω Power dissipation: 68W Gate charge: 33.8nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -5...15V Kind of package: reel; tape Case: D2PAK-7 Mounting: SMD Pulsed drain current: 78A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVHL160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 12A On-state resistance: 337mΩ Power dissipation: 59W Gate charge: 34nC Polarisation: unipolar Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Kind of package: tube Case: TO247-3 Mounting: THT Pulsed drain current: 69A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTH4L160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 12.3A On-state resistance: 224mΩ Power dissipation: 55.5W Gate charge: 34nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -15...25V Kind of package: tube Case: TO247-4 Mounting: THT Pulsed drain current: 69A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NVH4L160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 12.3A On-state resistance: 377mΩ Power dissipation: 55.5W Gate charge: 34nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -5...20V Kind of package: tube Case: TO247-4 Mounting: THT Pulsed drain current: 69A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TL431BVDR2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: SMD Case: SO8 Operating temperature: -40...125°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FOD8802A | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8 Case: SO8 Mounting: SMD Max. off-state voltage: 6V Turn-off time: 40µs Number of channels: 2 Manufacturer series: FOD8802 Collector-emitter voltage: 75V CTR@If: 35-230%@1mA Slew rate: 10kV/μs Kind of output: transistor Insulation voltage: 2.5kV Type of optocoupler: optocoupler Turn-on time: 6µs |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NTP055N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Pulsed drain current: 132A Power dissipation: 305W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FAN7388MX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V Mounting: SMD Supply voltage: 10...20V Output current: 350...650mA Polarisation: unipolar Operating temperature: -40...150°C Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Case: SO20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGD3040G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Application: ignition systems Mounting: SMD Collector-emitter voltage: 400V Power dissipation: 150W Gate charge: 21nC Version: ESD Features of semiconductor devices: logic level Type of transistor: IGBT Kind of package: reel; tape Case: DPAK Gate-emitter voltage: ±10V Collector current: 25.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGD3040G2-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Application: ignition systems Mounting: SMD Collector-emitter voltage: 400V Power dissipation: 150W Gate charge: 21nC Version: ESD Features of semiconductor devices: logic level Type of transistor: IGBT Kind of package: reel; tape Case: DPAK Gate-emitter voltage: ±10V Collector current: 25.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGD3040G2-F085V | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Application: ignition systems Mounting: SMD Collector-emitter voltage: 400V Power dissipation: 150W Gate charge: 21nC Version: ESD Features of semiconductor devices: logic level Type of transistor: IGBT Kind of package: reel; tape Case: DPAK Gate-emitter voltage: ±10V Collector current: 25.6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5375BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; bulk; 1N53xxB Manufacturer series: 1N53xxB Tolerance: ±5% Mounting: THT Power dissipation: 5W Kind of package: bulk Semiconductor structure: single diode Case: CASE017AA Zener voltage: 82V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5375BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; reel,tape; 1N53xxB Manufacturer series: 1N53xxB Tolerance: ±5% Mounting: THT Power dissipation: 5W Kind of package: reel; tape Semiconductor structure: single diode Case: CASE017AA Zener voltage: 82V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5342BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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1N5342BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N53xxB |
на замовлення 1195 шт: термін постачання 14-30 дні (днів) |
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1N5342BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
на замовлення 2831 шт: термін постачання 14-30 дні (днів) |
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FDH44N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 750W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 108nC Kind of package: tube Kind of channel: enhancement Technology: UniFET™ |
на замовлення 201 шт: термін постачання 14-30 дні (днів) |
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FDT4N50NZU | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2A Pulsed drain current: 6A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±25V On-state resistance: 3Ω Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
| FQU4N50TU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.64A; Idm: 10.4A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.64A Pulsed drain current: 10.4A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.7Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74LCX373MTC | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Family: LCX Trigger: level-triggered Kind of output: 3-state Quiescent current: 10µA Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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74LCX373MTCX | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Family: LCX Trigger: level-triggered Kind of output: 3-state Quiescent current: 10µA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74LCX373DTG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Supply voltage: 1.5...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Family: LCX Kind of output: 3-state Integrated circuit features: 5V tolerant on inputs/outputs Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74LCX373DTR2G | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX; LCX Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Family: LCX Trigger: level-triggered |
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SB540 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 500pF Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
| MC74HC4851ADG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16 Type of integrated circuit: multiplexer Output configuration: 8:1 Number of channels: 1 Case: SOIC16 Supply voltage: 2...6V Mounting: SMD Operating temperature: -55...125°C Kind of integrated circuit: demultiplexer; multiplexer Quiescent current: 40µA |
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| MC74HC4851ADTR2G-Q | ONSEMI |
Category: Integrated circuits - Unclassified Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC4851AMN1TWG-Q | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: multiplexer; demultiplexer,multiplexer; Ch: 1; IN: 8; SMD; OUT: 1 Type of integrated circuit: multiplexer Number of channels: 1 Supply voltage: 2...6V Mounting: SMD Operating temperature: -55...125°C Kind of integrated circuit: demultiplexer; multiplexer Number of inputs: 8 Number of outputs: 1 |
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| MC74HC4851ADR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16 Type of integrated circuit: multiplexer Output configuration: 8:1 Number of channels: 1 Case: SOIC16 Supply voltage: 2...6V Mounting: SMD Operating temperature: -55...125°C Kind of integrated circuit: demultiplexer; multiplexer Quiescent current: 40µA |
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| MC74HC4851ADR2G-Q | ONSEMI |
Category: Analog multiplexers and switches Description: IC: multiplexer; demultiplexer,multiplexer; SP8T; Ch: 1; SOIC16 Type of integrated circuit: multiplexer Output configuration: SP8T Number of channels: 1 Case: SOIC16 Supply voltage: 2...6V Mounting: SMD Operating temperature: -55...125°C Kind of integrated circuit: demultiplexer; multiplexer |
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NLVHC4851ADTR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; 40uA Type of integrated circuit: analog switch Number of channels: 1 Case: TSSOP16 Supply voltage: 2...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Application: automotive industry Kind of integrated circuit: demultiplexer; multiplexer Quiescent current: 40µA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MMBT5550LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 60...250 Mounting: SMD Kind of package: reel; tape |
на замовлення 7788 шт: термін постачання 14-30 дні (днів) |
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MMBT5550LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 140V; 600mA; 225mW; SOT23; universal Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Current gain: 60 Mounting: SMD Application: universal |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NSVMMBT5550LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 60...250 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||||||
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MMBTA42 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.24W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C15 | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
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74LCX125BQX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA Mounting: SMD Supply voltage: 2...3.6V DC Manufacturer series: LCX Type of integrated circuit: digital Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Quiescent current: 10µA Kind of package: reel; tape Case: QFN14 Kind of integrated circuit: buffer; non-inverting Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMB3904 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.7W; TSOT23-6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.7W Case: TSOT23-6 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NST3904F3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.36W Case: SOT1123 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. |
| MOC3051SR2M |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: reel; tape
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: reel; tape
Output voltage: 600V
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| MOC3051TVM |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
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| MOC3051VM |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Output voltage: 600V
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| FQB33N10TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 52mΩ
Power dissipation: 127W
Gate charge: 51nC
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 52mΩ
Power dissipation: 127W
Gate charge: 51nC
Technology: QFET®
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| FQB33N10LTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 55mΩ
Pulsed drain current: 132A
Power dissipation: 127W
Gate charge: 40nC
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 55mΩ
Pulsed drain current: 132A
Power dissipation: 127W
Gate charge: 40nC
Technology: QFET®
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од. на суму грн.
| FAN3852UC16X |
|
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; PDM; microphone preamplifier; 1.64÷3.63VDC
Supply voltage: 1.64...3.63V DC
Kind of package: reel; tape
Case: WLCSP6
Interface: PDM
Number of channels: 1
Mounting: SMD
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: microphone preamplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; PDM; microphone preamplifier; 1.64÷3.63VDC
Supply voltage: 1.64...3.63V DC
Kind of package: reel; tape
Case: WLCSP6
Interface: PDM
Number of channels: 1
Mounting: SMD
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: microphone preamplifier
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од. на суму грн.
| ISL9V3040D3ST |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| ISL9V3040D3ST-F085C |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| MC74ACT161DR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NCP45524IMNTWG-H |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
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| NCP45524IMNTWG-L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
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| MC33275ST-3.3T3G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Manufacturer series: MC33275
Input voltage: 0...20V
Voltage drop: 1.1V
Operating temperature: -40...125°C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Manufacturer series: MC33275
Input voltage: 0...20V
Voltage drop: 1.1V
Operating temperature: -40...125°C
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 451.58 грн |
| MC33275ST-5.0T3G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
на замовлення 3568 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.48 грн |
| 25+ | 17.36 грн |
| 27+ | 15.93 грн |
| 100+ | 13.84 грн |
| 250+ | 12.75 грн |
| 500+ | 11.91 грн |
| 1000+ | 11.32 грн |
| MC33275DT-3.3RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC33275D-3.0G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
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| MC33275D-3.0R2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC33275D-3.3R2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC33275D-5.0R2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC33275DT-5.0RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC33275MN-3.0R2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| NTBG160N120SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 78A
Power dissipation: 68W
Gate charge: 33.8nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 13.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.365Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 78A
Power dissipation: 68W
Gate charge: 33.8nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 13.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.365Ω
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Мінімальне замовлення: 800 шт
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| NTHL160N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Power dissipation: 59W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-3
Mounting: THT
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Power dissipation: 59W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-3
Mounting: THT
Pulsed drain current: 69A
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| NVBG160N120SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 13.7A
On-state resistance: 0.365Ω
Power dissipation: 68W
Gate charge: 33.8nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...15V
Kind of package: reel; tape
Case: D2PAK-7
Mounting: SMD
Pulsed drain current: 78A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 13.7A
On-state resistance: 0.365Ω
Power dissipation: 68W
Gate charge: 33.8nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...15V
Kind of package: reel; tape
Case: D2PAK-7
Mounting: SMD
Pulsed drain current: 78A
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| NVHL160N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 337mΩ
Power dissipation: 59W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-3
Mounting: THT
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 337mΩ
Power dissipation: 59W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-3
Mounting: THT
Pulsed drain current: 69A
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| NTH4L160N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12.3A
On-state resistance: 224mΩ
Power dissipation: 55.5W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-4
Mounting: THT
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12.3A
On-state resistance: 224mΩ
Power dissipation: 55.5W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-4
Mounting: THT
Pulsed drain current: 69A
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| NVH4L160N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12.3A
On-state resistance: 377mΩ
Power dissipation: 55.5W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-4
Mounting: THT
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 12.3A
On-state resistance: 377mΩ
Power dissipation: 55.5W
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-4
Mounting: THT
Pulsed drain current: 69A
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| TL431BVDR2G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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| FOD8802A |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Turn-off time: 40µs
Number of channels: 2
Manufacturer series: FOD8802
Collector-emitter voltage: 75V
CTR@If: 35-230%@1mA
Slew rate: 10kV/μs
Kind of output: transistor
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
Turn-on time: 6µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Turn-off time: 40µs
Number of channels: 2
Manufacturer series: FOD8802
Collector-emitter voltage: 75V
CTR@If: 35-230%@1mA
Slew rate: 10kV/μs
Kind of output: transistor
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
Turn-on time: 6µs
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Мінімальне замовлення: 2000 шт
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| NTP055N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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| FAN7388MX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Mounting: SMD
Supply voltage: 10...20V
Output current: 350...650mA
Polarisation: unipolar
Operating temperature: -40...150°C
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO20
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Mounting: SMD
Supply voltage: 10...20V
Output current: 350...650mA
Polarisation: unipolar
Operating temperature: -40...150°C
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO20
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| FGD3040G2-F085 |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
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| FGD3040G2-F085C |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
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| FGD3040G2-F085V |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Application: ignition systems
Mounting: SMD
Collector-emitter voltage: 400V
Power dissipation: 150W
Gate charge: 21nC
Version: ESD
Features of semiconductor devices: logic level
Type of transistor: IGBT
Kind of package: reel; tape
Case: DPAK
Gate-emitter voltage: ±10V
Collector current: 25.6A
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| 1N5375BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; bulk; 1N53xxB
Manufacturer series: 1N53xxB
Tolerance: ±5%
Mounting: THT
Power dissipation: 5W
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE017AA
Zener voltage: 82V
Type of diode: Zener
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; bulk; 1N53xxB
Manufacturer series: 1N53xxB
Tolerance: ±5%
Mounting: THT
Power dissipation: 5W
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE017AA
Zener voltage: 82V
Type of diode: Zener
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| 1N5375BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; reel,tape; 1N53xxB
Manufacturer series: 1N53xxB
Tolerance: ±5%
Mounting: THT
Power dissipation: 5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE017AA
Zener voltage: 82V
Type of diode: Zener
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; CASE017AA; single diode; reel,tape; 1N53xxB
Manufacturer series: 1N53xxB
Tolerance: ±5%
Mounting: THT
Power dissipation: 5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE017AA
Zener voltage: 82V
Type of diode: Zener
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| 1N5342BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.58 грн |
| 1N5342BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
на замовлення 1195 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.26 грн |
| 30+ | 14.26 грн |
| 31+ | 13.75 грн |
| 100+ | 13.33 грн |
| 1N5342BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
на замовлення 2831 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.64 грн |
| 20+ | 21.47 грн |
| 22+ | 19.71 грн |
| 50+ | 17.44 грн |
| 100+ | 15.93 грн |
| 200+ | 14.76 грн |
| 500+ | 13.17 грн |
| 1000+ | 13.00 грн |
| FDH44N50 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 750W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 750W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
на замовлення 201 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 665.63 грн |
| 5+ | 509.06 грн |
| 10+ | 452.87 грн |
| 30+ | 420.16 грн |
| FDT4N50NZU |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2A
Pulsed drain current: 6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2A
Pulsed drain current: 6A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FQU4N50TU-WS |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.64A; Idm: 10.4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.64A
Pulsed drain current: 10.4A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.64A; Idm: 10.4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.64A
Pulsed drain current: 10.4A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.7Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
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| 74LCX373MTC |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Kind of output: 3-state
Quiescent current: 10µA
Kind of package: tube
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Kind of output: 3-state
Quiescent current: 10µA
Kind of package: tube
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Мінімальне замовлення: 3 шт
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| 74LCX373MTCX |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Kind of output: 3-state
Quiescent current: 10µA
Kind of package: reel; tape
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Kind of output: 3-state
Quiescent current: 10µA
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| MC74LCX373DTG |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 1.5...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of package: tube
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 1.5...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of package: tube
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| MC74LCX373DTR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Family: LCX
Trigger: level-triggered
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| SB540 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
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Мінімальне замовлення: 3 шт
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| MC74HC4851ADG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 40µA
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 40µA
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| MC74HC4851ADTR2G-Q |
|
Виробник: ONSEMI
Category: Integrated circuits - Unclassified
Description: IC: digital
Type of integrated circuit: digital
Category: Integrated circuits - Unclassified
Description: IC: digital
Type of integrated circuit: digital
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Мінімальне замовлення: 2500 шт
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| MC74HC4851AMN1TWG-Q |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: multiplexer; demultiplexer,multiplexer; Ch: 1; IN: 8; SMD; OUT: 1
Type of integrated circuit: multiplexer
Number of channels: 1
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Number of inputs: 8
Number of outputs: 1
Category: Decoders, multiplexers, switches
Description: IC: multiplexer; demultiplexer,multiplexer; Ch: 1; IN: 8; SMD; OUT: 1
Type of integrated circuit: multiplexer
Number of channels: 1
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Number of inputs: 8
Number of outputs: 1
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| MC74HC4851ADR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 40µA
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; 8: 1; Ch: 1; SOIC16
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 40µA
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| MC74HC4851ADR2G-Q |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; SP8T; Ch: 1; SOIC16
Type of integrated circuit: multiplexer
Output configuration: SP8T
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
Category: Analog multiplexers and switches
Description: IC: multiplexer; demultiplexer,multiplexer; SP8T; Ch: 1; SOIC16
Type of integrated circuit: multiplexer
Output configuration: SP8T
Number of channels: 1
Case: SOIC16
Supply voltage: 2...6V
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: demultiplexer; multiplexer
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| NLVHC4851ADTR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; 40uA
Type of integrated circuit: analog switch
Number of channels: 1
Case: TSSOP16
Supply voltage: 2...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Application: automotive industry
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 40µA
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; 40uA
Type of integrated circuit: analog switch
Number of channels: 1
Case: TSSOP16
Supply voltage: 2...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Application: automotive industry
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 40µA
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Мінімальне замовлення: 2500 шт
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| MMBT5550LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 60...250
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 60...250
Mounting: SMD
Kind of package: reel; tape
на замовлення 7788 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 70+ | 6.04 грн |
| 102+ | 4.13 грн |
| 120+ | 3.50 грн |
| 500+ | 2.43 грн |
| 1000+ | 2.11 грн |
| 1500+ | 1.94 грн |
| 3000+ | 1.69 грн |
| 6000+ | 1.50 грн |
| MMBT5550LT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 600mA; 225mW; SOT23; universal
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Current gain: 60
Mounting: SMD
Application: universal
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 600mA; 225mW; SOT23; universal
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Current gain: 60
Mounting: SMD
Application: universal
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Мінімальне замовлення: 10000 шт
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| NSVMMBT5550LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| MMBTA42 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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Мінімальне замовлення: 10 шт
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| BZX84C15 |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
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Мінімальне замовлення: 25 шт
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| 74LCX125BQX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA
Mounting: SMD
Supply voltage: 2...3.6V DC
Manufacturer series: LCX
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 10µA
Kind of package: reel; tape
Case: QFN14
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA
Mounting: SMD
Supply voltage: 2...3.6V DC
Manufacturer series: LCX
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 10µA
Kind of package: reel; tape
Case: QFN14
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
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| FMB3904 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| NST3904F3T5G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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