Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TIP112G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBF2201NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 240mA; Idm: 750A; 150mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.24A Power dissipation: 0.15W Case: SC70; SOT323 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Pulsed drain current: 750A On-state resistance: 1Ω Gate charge: 1.4nC Kind of channel: enhancement |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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MMBF0201NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.24A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape On-state resistance: 1.4Ω Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMSD103T1G | ONSEMI |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V; 400mW Mounting: SMD Power dissipation: 0.4W Type of diode: switching Case: SOD123 Capacitance: 5pF Max. off-state voltage: 250V Max. forward voltage: 1.25V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 50ns Leakage current: 0.1mA |
на замовлення 1477 шт: термін постачання 21-30 дні (днів) |
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SMMSD103T1G | ONSEMI |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V Mounting: SMD Application: automotive industry Kind of package: reel; tape Type of diode: switching Case: SOD123 Max. off-state voltage: 250V Max. forward voltage: 1.25V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 625mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC14022BDR2G | ONSEMI |
![]() Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC Operating temperature: -55...125°C Number of inputs: 3 Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: 1 Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: counter; octal Mounting: SMD Case: SOIC16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD9101P2T5G | ONSEMI |
![]() Description: Diode: TVS; 7V; SOD923; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 7V Case: SOD923 Mounting: SMD Kind of package: reel; tape Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SZESD9101P2T5G | ONSEMI |
![]() Description: Diode: TVS; 5.3÷8V; unidirectional; SOD923F; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.3...8V Semiconductor structure: unidirectional Case: SOD923F Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDS4685 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -8.2A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.2A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 27nC Technology: PowerTrench® |
на замовлення 790 шт: термін постачання 21-30 дні (днів) |
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NCP1399ACDR2G | ONSEMI |
![]() Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC Type of integrated circuit: PMIC Output current: 0.5...1A Frequency: 20...750kHz Mounting: SMD Case: SO16 Topology: resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9.5...20V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMD6P02R2G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 33mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MUR1100EG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 1kV; 1A; bulk; DO41; 100ns Mounting: THT Kind of package: bulk Type of diode: rectifying Case: DO41 Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Reverse recovery time: 100ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
1N485B | ONSEMI |
![]() Description: Diode: switching; THT; 200V; 0.2A; bulk; DO35 Mounting: THT Kind of package: bulk Load current: 0.2A Max. off-state voltage: 200V Case: DO35 Type of diode: switching Features of semiconductor devices: small signal Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
1N485BTR | ONSEMI |
![]() Description: Diode: switching; THT; 200V; 0.2A; reel,tape; DO35 Mounting: THT Kind of package: reel; tape Load current: 0.2A Max. off-state voltage: 200V Case: DO35 Type of diode: switching Features of semiconductor devices: small signal Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FDLL485B | ONSEMI |
![]() Description: Diode: switching; SMD; 180V; 0.5A; SOD80; reel,tape Mounting: SMD Kind of package: reel; tape Load current: 0.5A Max. off-state voltage: 180V Case: SOD80 Type of diode: switching Features of semiconductor devices: small signal Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FDMS4D0N12C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 114A Pulsed drain current: 628A Power dissipation: 106W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC14490DWG | ONSEMI |
![]() Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16 Operating temperature: -40...85°C Case: SO16 Supply voltage: 3...18V DC Type of integrated circuit: digital Technology: CMOS Kind of integrated circuit: contact bounce eliminator Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC14490DWR2G | ONSEMI |
![]() Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC Operating temperature: -55...125°C Case: SOIC16 Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: 1 Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: contact bounce eliminator; hex Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMSZ5225BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 3505 шт: термін постачання 21-30 дні (днів) |
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KA1M0565RYDTU | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 3.5A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: TO220F-4FL Mounting: THT Operating temperature: -25...85°C Topology: flyback; forward On-state resistance: 2.2Ω Duty cycle factor: 74...80% Kind of package: tube Power: 140W Operating voltage: 10...25V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ESD7351XV2T1G | ONSEMI |
![]() Description: Diode: TVS; 0.15W; 5V; SOD523; reel,tape; 0.43÷0.6pF; ESD Type of diode: TVS Peak pulse power dissipation: 0.15W Max. off-state voltage: 3.3V Breakdown voltage: 5V Case: SOD523 Mounting: SMD Kind of package: reel; tape Version: ESD Leakage current: 1nA Capacitance: 0.43...0.6pF |
на замовлення 3225 шт: термін постачання 21-30 дні (днів) |
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FFPF20UP30DNTU | ONSEMI |
![]() Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 100A; TO220FP; 45ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220FP Max. forward voltage: 1.3V Max. load current: 20A Reverse recovery time: 45ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74VHC4066DR2G | ONSEMI |
![]() Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 2÷12VDC Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 Mounting: SMD Case: SO14 Supply voltage: 2...12V DC Kind of package: reel; tape Quiescent current: 40µA Manufacturer series: VHC Technology: CMOS Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74VHC4066DTR2G | ONSEMI |
![]() Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; 40uA Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 Mounting: SMD Case: TSSOP14 Supply voltage: 2...12V DC Kind of package: reel; tape Quiescent current: 40µA Manufacturer series: VHC Technology: CMOS Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5569-TD-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 7A Power dissipation: 1.3W Case: SOT89 Current gain: 560...200 Mounting: SMD Kind of package: reel; tape Frequency: 330MHz |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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HCPL0600 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 3.75kV Case: SO8 Turn-on time: 50ns Turn-off time: 50ns |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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HCPL0600R2 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 3.75kV; 10Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate; logic Insulation voltage: 3.75kV Transfer rate: 10Mbps Case: SOIC8 Slew rate: 5kV/μs Max. off-state voltage: 5V Output voltage: 7V Manufacturer series: HCPL0600 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NSVBAV23CLT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 250V; 0.4A; SOT23; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Case: SOT23 Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BC547B | ONSEMI |
![]() ![]() ![]() ![]() Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 110...800 Mounting: THT Frequency: 300MHz |
на замовлення 8720 шт: термін постачання 21-30 дні (днів) |
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FDPF39N20 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 23.4A; 37W; TO220FP Case: TO220FP Mounting: THT Gate-source voltage: ±30V Drain-source voltage: 200V Drain current: 23.4A On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 37W Polarisation: unipolar Kind of package: tube Gate charge: 49nC Technology: UniFET™ Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
NCP163AFCT120T2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; WLCSP4; SMD Tolerance: ±2% Output voltage: 1.2V Output current: 0.25A Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2.2...5.5V Manufacturer series: NCP163 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...125°C Case: WLCSP4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP156AAFCT120280T2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA Tolerance: ±1% Output voltage: 1.2V; 2.8V Output current: 250...500mA Type of integrated circuit: voltage regulator Number of channels: 2 Input voltage: 0.8...3.6V Manufacturer series: NCP156 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...125°C Case: WLCSP6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NTA4153NT1G | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD Mounting: SMD Case: SC75 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.915A On-state resistance: 0.95Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Version: ESD Gate charge: 1.82nC Kind of channel: enhancement Gate-source voltage: ±6V |
на замовлення 529 шт: термін постачання 21-30 дні (днів) |
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DAN222T1G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A Type of diode: rectifying Mounting: SMD Case: SC75 Kind of package: reel; tape Max. off-state voltage: 80V Max. load current: 0.3A Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: common cathode; double Reverse recovery time: 4ns Max. forward impulse current: 2A Power dissipation: 0.15W Features of semiconductor devices: ultrafast switching Capacitance: 3.5pF |
на замовлення 2964 шт: термін постачання 21-30 дні (днів) |
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DAP222T1G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A Type of diode: rectifying Mounting: SMD Case: SC75 Kind of package: reel; tape Max. off-state voltage: 80V Max. load current: 0.3A Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: common anode; double Reverse recovery time: 4ns Max. forward impulse current: 2A Power dissipation: 0.15W Features of semiconductor devices: ultrafast switching Capacitance: 3.5pF |
на замовлення 5970 шт: термін постачання 21-30 дні (днів) |
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NTA7002NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 0.154A; 0.3W; SC75 Mounting: SMD Case: SC75 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 0.154A On-state resistance: 7Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±10V |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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SZESDR0502BT1G | ONSEMI |
![]() Description: Diode: TVS array; SOT416; reel,tape Type of diode: TVS array Mounting: SMD Case: SOT416 Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NSVBAS16TT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; SC75; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Case: SC75 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NSVDAN222T1G | ONSEMI |
![]() Description: Diode: switching; SMD; 80V; 0.1A; SOT416; reel,tape Type of diode: switching Mounting: SMD Case: SOT416 Kind of package: reel; tape Application: automotive industry Load current: 0.1A Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Max. off-state voltage: 80V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NSVDAP222T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; SC75; reel,tape Type of diode: switching Mounting: SMD Case: SC75 Kind of package: reel; tape Application: automotive industry Max. off-state voltage: 80V Load current: 0.1A Semiconductor structure: common cathode; double Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1SMA5914BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 3.6V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SMA5934BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
KSD5041RTA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 20V; 5A; 0.75W; TO92 Frequency: 150MHz Collector-emitter voltage: 20V Current gain: 340...600 Collector current: 5A Type of transistor: NPN Power dissipation: 0.75W Polarisation: bipolar Kind of package: Ammo Pack Mounting: THT Case: TO92 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MMBTA05LT1G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 162 шт: термін постачання 21-30 дні (днів) |
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MC74HCT132ADR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Number of channels: quad; 4 Delay time: 25ns Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NAND Technology: CMOS Family: HCT Mounting: SMD Operating temperature: -55...125°C Case: SO14 Number of inputs: 2 Supply voltage: 2...6V DC |
на замовлення 2378 шт: термін постачання 21-30 дні (днів) |
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MC74HCT132ADTG | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Number of channels: quad; 4 Delay time: 25ns Kind of package: tube Kind of input: with Schmitt trigger Kind of gate: NAND Technology: CMOS Family: HCT Mounting: SMD Operating temperature: -55...125°C Case: TSSOP14 Number of inputs: 2 Supply voltage: 2...6V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HCT132ADTR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Number of channels: quad; 4 Delay time: 25ns Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NAND Technology: CMOS Family: HCT Mounting: SMD Operating temperature: -55...125°C Case: TSSOP14 Number of inputs: 2 Supply voltage: 2...6V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C7V5LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: BZX84C |
на замовлення 5700 шт: термін постачання 21-30 дні (днів) |
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SZBZX84C7V5LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SZBZX84C7V5ET1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 7.5V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
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LM317MTG | ONSEMI |
![]() Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; TO220 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.5A Case: TO220 Mounting: THT Manufacturer series: LM317M Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.508...0.61mm Input voltage: 1.2...40V |
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NTH4L080N120SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 21A Pulsed drain current: 125A Power dissipation: 28W Case: TO247-4 Gate-source voltage: -15...25V On-state resistance: 80mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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H11G1M | ONSEMI |
![]() ![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Case: DIP6 CTR@If: 100%@10mA |
на замовлення 235 шт: термін постачання 21-30 дні (днів) |
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H11G1SR2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Case: Gull wing 6 CTR@If: 100%@10mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAT54WT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W Max. load current: 0.3A Capacitance: 10pF |
на замовлення 2650 шт: термін постачання 21-30 дні (днів) |
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NCP51200MNTXG | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Output voltage: -0.1...3.5V Output current: 3A Type of integrated circuit: PMIC Number of channels: 1 Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator Mounting: SMD Operating temperature: max. 150°C Case: DFN10 Operating voltage: 0.5...1.8/2.375...5.5V DC |
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В кошику од. на суму грн. | |||||||||||||||
NIS1161MTTAG | ONSEMI |
![]() Description: Diode: TVS; 23V; WDFN6; reel,tape Case: WDFN6 Mounting: SMD Max. off-state voltage: 16V Breakdown voltage: 23V Kind of package: reel; tape Type of diode: TVS |
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В кошику од. на суму грн. | |||||||||||||||
NIV1161MTTAG | ONSEMI |
![]() Description: Diode: TVS; 23V; WDFN6; reel,tape; automotive industry Case: WDFN6 Mounting: SMD Max. off-state voltage: 16V Breakdown voltage: 23V Application: automotive industry Kind of package: reel; tape Type of diode: TVS |
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В кошику од. на суму грн. | |||||||||||||||
NIV2161MTTAG | ONSEMI |
![]() Description: Diode: TVS array; 23V; WDFN10; reel,tape Case: WDFN10 Mounting: SMD Max. off-state voltage: 16V Breakdown voltage: 23V Application: automotive industry Kind of package: reel; tape Type of diode: TVS array |
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В кошику од. на суму грн. | |||||||||||||||
MC74AC373DTR2G | ONSEMI |
![]() Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Family: AC Manufacturer series: AC |
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В кошику од. на суму грн. |
TIP112G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
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MMBF2201NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 240mA; Idm: 750A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.15W
Case: SC70; SOT323
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 750A
On-state resistance: 1Ω
Gate charge: 1.4nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 240mA; Idm: 750A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.15W
Case: SC70; SOT323
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 750A
On-state resistance: 1Ω
Gate charge: 1.4nC
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.48 грн |
28+ | 14.15 грн |
50+ | 10.44 грн |
100+ | 9.12 грн |
130+ | 7.04 грн |
357+ | 6.65 грн |
1000+ | 6.42 грн |
MMBF0201NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 1.4Ω
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.24A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 1.4Ω
Kind of channel: enhancement
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MMSD103T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V; 400mW
Mounting: SMD
Power dissipation: 0.4W
Type of diode: switching
Case: SOD123
Capacitance: 5pF
Max. off-state voltage: 250V
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V; 400mW
Mounting: SMD
Power dissipation: 0.4W
Type of diode: switching
Case: SOD123
Capacitance: 5pF
Max. off-state voltage: 250V
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Leakage current: 0.1mA
на замовлення 1477 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.49 грн |
70+ | 5.57 грн |
100+ | 3.92 грн |
500+ | 2.92 грн |
536+ | 1.69 грн |
1473+ | 1.59 грн |
SMMSD103T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Type of diode: switching
Case: SOD123
Max. off-state voltage: 250V
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 625mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Type of diode: switching
Case: SOD123
Max. off-state voltage: 250V
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 625mA
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MC14022BDR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: counter; octal
Mounting: SMD
Case: SOIC16
Category: Counters/dividers
Description: IC: digital; counter,octal; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: counter; octal
Mounting: SMD
Case: SOIC16
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ESD9101P2T5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 7V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 7V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
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SZESD9101P2T5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5.3÷8V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.3...8V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5.3÷8V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.3...8V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FDS4685 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.2A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 27nC
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.2A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 27nC
Technology: PowerTrench®
на замовлення 790 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 104.93 грн |
10+ | 64.26 грн |
21+ | 44.85 грн |
56+ | 42.38 грн |
250+ | 42.14 грн |
500+ | 40.83 грн |
NCP1399ACDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Frequency: 20...750kHz
Mounting: SMD
Case: SO16
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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NTMD6P02R2G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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MUR1100EG | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; DO41; 100ns
Mounting: THT
Kind of package: bulk
Type of diode: rectifying
Case: DO41
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; DO41; 100ns
Mounting: THT
Kind of package: bulk
Type of diode: rectifying
Case: DO41
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 100ns
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1N485B |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.2A; bulk; DO35
Mounting: THT
Kind of package: bulk
Load current: 0.2A
Max. off-state voltage: 200V
Case: DO35
Type of diode: switching
Features of semiconductor devices: small signal
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.2A; bulk; DO35
Mounting: THT
Kind of package: bulk
Load current: 0.2A
Max. off-state voltage: 200V
Case: DO35
Type of diode: switching
Features of semiconductor devices: small signal
Semiconductor structure: single diode
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1N485BTR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.2A; reel,tape; DO35
Mounting: THT
Kind of package: reel; tape
Load current: 0.2A
Max. off-state voltage: 200V
Case: DO35
Type of diode: switching
Features of semiconductor devices: small signal
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.2A; reel,tape; DO35
Mounting: THT
Kind of package: reel; tape
Load current: 0.2A
Max. off-state voltage: 200V
Case: DO35
Type of diode: switching
Features of semiconductor devices: small signal
Semiconductor structure: single diode
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FDLL485B |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 180V; 0.5A; SOD80; reel,tape
Mounting: SMD
Kind of package: reel; tape
Load current: 0.5A
Max. off-state voltage: 180V
Case: SOD80
Type of diode: switching
Features of semiconductor devices: small signal
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: switching; SMD; 180V; 0.5A; SOD80; reel,tape
Mounting: SMD
Kind of package: reel; tape
Load current: 0.5A
Max. off-state voltage: 180V
Case: SOD80
Type of diode: switching
Features of semiconductor devices: small signal
Semiconductor structure: single diode
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FDMS4D0N12C |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 114A
Pulsed drain current: 628A
Power dissipation: 106W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 114A
Pulsed drain current: 628A
Power dissipation: 106W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC14490DWG |
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Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16
Operating temperature: -40...85°C
Case: SO16
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Kind of integrated circuit: contact bounce eliminator
Mounting: SMD
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16
Operating temperature: -40...85°C
Case: SO16
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Kind of integrated circuit: contact bounce eliminator
Mounting: SMD
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MC14490DWR2G |
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Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC
Operating temperature: -55...125°C
Case: SOIC16
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: contact bounce eliminator; hex
Mounting: SMD
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC
Operating temperature: -55...125°C
Case: SOIC16
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: contact bounce eliminator; hex
Mounting: SMD
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MMSZ5225BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 3505 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.49 грн |
80+ | 4.87 грн |
113+ | 3.45 грн |
131+ | 2.96 грн |
601+ | 1.51 грн |
1652+ | 1.43 грн |
KA1M0565RYDTU |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 2.2Ω
Duty cycle factor: 74...80%
Kind of package: tube
Power: 140W
Operating voltage: 10...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 2.2Ω
Duty cycle factor: 74...80%
Kind of package: tube
Power: 140W
Operating voltage: 10...25V DC
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ESD7351XV2T1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5V; SOD523; reel,tape; 0.43÷0.6pF; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 1nA
Capacitance: 0.43...0.6pF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5V; SOD523; reel,tape; 0.43÷0.6pF; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 1nA
Capacitance: 0.43...0.6pF
на замовлення 3225 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 14.99 грн |
47+ | 8.35 грн |
100+ | 5.21 грн |
236+ | 3.83 грн |
648+ | 3.62 грн |
3000+ | 3.60 грн |
FFPF20UP30DNTU |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 100A; TO220FP; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220FP
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 45ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 100A; TO220FP; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220FP
Max. forward voltage: 1.3V
Max. load current: 20A
Reverse recovery time: 45ns
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MC74VHC4066DR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 2÷12VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...12V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
Technology: CMOS
Operating temperature: -55...125°C
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 2÷12VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...12V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
Technology: CMOS
Operating temperature: -55...125°C
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MC74VHC4066DTR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; 40uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...12V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
Technology: CMOS
Operating temperature: -55...125°C
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; 40uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...12V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
Technology: CMOS
Operating temperature: -55...125°C
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2SC5569-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 7A
Power dissipation: 1.3W
Case: SOT89
Current gain: 560...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 7A
Power dissipation: 1.3W
Case: SOT89
Current gain: 560...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
на замовлення 800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 51.63 грн |
12+ | 34.41 грн |
36+ | 25.36 грн |
99+ | 23.97 грн |
500+ | 23.04 грн |
HCPL0600 |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Turn-on time: 50ns
Turn-off time: 50ns
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Turn-on time: 50ns
Turn-off time: 50ns
на замовлення 80 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.79 грн |
12+ | 33.87 грн |
30+ | 30.82 грн |
50+ | 28.56 грн |
HCPL0600R2 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 3.75kV; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 3.75kV
Transfer rate: 10Mbps
Case: SOIC8
Slew rate: 5kV/μs
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: HCPL0600
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 3.75kV; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 3.75kV
Transfer rate: 10Mbps
Case: SOIC8
Slew rate: 5kV/μs
Max. off-state voltage: 5V
Output voltage: 7V
Manufacturer series: HCPL0600
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NSVBAV23CLT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
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BC547B |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
на замовлення 8720 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.82 грн |
25+ | 16.08 грн |
31+ | 12.53 грн |
100+ | 8.66 грн |
168+ | 5.41 грн |
461+ | 5.10 грн |
FDPF39N20 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 23.4A; 37W; TO220FP
Case: TO220FP
Mounting: THT
Gate-source voltage: ±30V
Drain-source voltage: 200V
Drain current: 23.4A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 37W
Polarisation: unipolar
Kind of package: tube
Gate charge: 49nC
Technology: UniFET™
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 23.4A; 37W; TO220FP
Case: TO220FP
Mounting: THT
Gate-source voltage: ±30V
Drain-source voltage: 200V
Drain current: 23.4A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 37W
Polarisation: unipolar
Kind of package: tube
Gate charge: 49nC
Technology: UniFET™
Kind of channel: enhancement
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NCP163AFCT120T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; WLCSP4; SMD
Tolerance: ±2%
Output voltage: 1.2V
Output current: 0.25A
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.2...5.5V
Manufacturer series: NCP163
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: WLCSP4
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 250mA; WLCSP4; SMD
Tolerance: ±2%
Output voltage: 1.2V
Output current: 0.25A
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.2...5.5V
Manufacturer series: NCP163
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: WLCSP4
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NCP156AAFCT120280T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA
Tolerance: ±1%
Output voltage: 1.2V; 2.8V
Output current: 250...500mA
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 0.8...3.6V
Manufacturer series: NCP156
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: WLCSP6
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA
Tolerance: ±1%
Output voltage: 1.2V; 2.8V
Output current: 250...500mA
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 0.8...3.6V
Manufacturer series: NCP156
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: WLCSP6
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NTA4153NT1G | ![]() |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.915A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Gate charge: 1.82nC
Kind of channel: enhancement
Gate-source voltage: ±6V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.915A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Gate charge: 1.82nC
Kind of channel: enhancement
Gate-source voltage: ±6V
на замовлення 529 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.32 грн |
32+ | 12.37 грн |
40+ | 9.77 грн |
50+ | 8.37 грн |
100+ | 7.27 грн |
177+ | 5.16 грн |
486+ | 4.87 грн |
DAN222T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Max. off-state voltage: 80V
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: common cathode; double
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Power dissipation: 0.15W
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Max. off-state voltage: 80V
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: common cathode; double
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Power dissipation: 0.15W
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
на замовлення 2964 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.49 грн |
49+ | 7.96 грн |
100+ | 3.98 грн |
500+ | 2.57 грн |
506+ | 1.80 грн |
1391+ | 1.70 грн |
DAP222T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Max. off-state voltage: 80V
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: common anode; double
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Power dissipation: 0.15W
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Max. off-state voltage: 80V
Max. load current: 0.3A
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: common anode; double
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Power dissipation: 0.15W
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
на замовлення 5970 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.33 грн |
70+ | 5.57 грн |
81+ | 4.79 грн |
113+ | 3.45 грн |
500+ | 2.49 грн |
519+ | 1.76 грн |
1428+ | 1.65 грн |
NTA7002NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.154A; 0.3W; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 0.154A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.154A; 0.3W; SC75
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 0.154A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±10V
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.82 грн |
38+ | 10.21 грн |
45+ | 8.66 грн |
69+ | 5.68 грн |
100+ | 4.78 грн |
291+ | 3.12 грн |
800+ | 2.95 грн |
SZESDR0502BT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; SOT416; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; SOT416; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Application: automotive industry
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NSVBAS16TT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; SC75; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SC75
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; SC75; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SC75
Application: automotive industry
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NSVDAN222T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SOT416; reel,tape
Type of diode: switching
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Application: automotive industry
Load current: 0.1A
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Max. off-state voltage: 80V
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SOT416; reel,tape
Type of diode: switching
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Application: automotive industry
Load current: 0.1A
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Max. off-state voltage: 80V
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NSVDAP222T1G |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC75; reel,tape
Type of diode: switching
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC75; reel,tape
Type of diode: switching
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
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1SMA5914BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.6V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.6V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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1SMA5934BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 24V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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KSD5041RTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.75W; TO92
Frequency: 150MHz
Collector-emitter voltage: 20V
Current gain: 340...600
Collector current: 5A
Type of transistor: NPN
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Case: TO92
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.75W; TO92
Frequency: 150MHz
Collector-emitter voltage: 20V
Current gain: 340...600
Collector current: 5A
Type of transistor: NPN
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Case: TO92
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MMBTA05LT1G | ![]() |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 162 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.66 грн |
56+ | 6.96 грн |
65+ | 6.03 грн |
89+ | 4.39 грн |
96+ | 4.04 грн |
102+ | 3.81 грн |
MC74HCT132ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Delay time: 25ns
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: HCT
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Delay time: 25ns
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: HCT
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Number of inputs: 2
Supply voltage: 2...6V DC
на замовлення 2378 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.97 грн |
16+ | 25.36 грн |
25+ | 21.03 грн |
50+ | 18.33 грн |
100+ | 16.70 грн |
MC74HCT132ADTG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Delay time: 25ns
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: HCT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Delay time: 25ns
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: HCT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...6V DC
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MC74HCT132ADTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Delay time: 25ns
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: HCT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Delay time: 25ns
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS
Family: HCT
Mounting: SMD
Operating temperature: -55...125°C
Case: TSSOP14
Number of inputs: 2
Supply voltage: 2...6V DC
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BZX84C7V5LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
на замовлення 5700 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.52 грн |
217+ | 1.79 грн |
250+ | 1.56 грн |
857+ | 1.06 грн |
2351+ | 1.01 грн |
3000+ | 0.98 грн |
SZBZX84C7V5LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C7V5ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 7.5V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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LM317MTG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; TO220
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: TO220
Mounting: THT
Manufacturer series: LM317M
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 1.2...40V
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; TO220
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: TO220
Mounting: THT
Manufacturer series: LM317M
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 1.2...40V
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NTH4L080N120SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 21A
Pulsed drain current: 125A
Power dissipation: 28W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 21A
Pulsed drain current: 125A
Power dissipation: 28W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 9 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1099.24 грн |
2+ | 839.00 грн |
3+ | 793.38 грн |
H11G1M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
CTR@If: 100%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
CTR@If: 100%@10mA
на замовлення 235 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 59.96 грн |
10+ | 39.13 грн |
31+ | 29.77 грн |
50+ | 29.69 грн |
85+ | 28.07 грн |
H11G1SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: Gull wing 6
CTR@If: 100%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: Gull wing 6
CTR@If: 100%@10mA
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BAT54WT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Max. load current: 0.3A
Capacitance: 10pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Max. load current: 0.3A
Capacitance: 10pF
на замовлення 2650 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.49 грн |
75+ | 5.18 грн |
92+ | 4.24 грн |
127+ | 3.05 грн |
503+ | 1.82 грн |
1382+ | 1.72 грн |
NCP51200MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Output voltage: -0.1...3.5V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Operating temperature: max. 150°C
Case: DFN10
Operating voltage: 0.5...1.8/2.375...5.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Output voltage: -0.1...3.5V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Operating temperature: max. 150°C
Case: DFN10
Operating voltage: 0.5...1.8/2.375...5.5V DC
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NIS1161MTTAG |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape
Case: WDFN6
Mounting: SMD
Max. off-state voltage: 16V
Breakdown voltage: 23V
Kind of package: reel; tape
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape
Case: WDFN6
Mounting: SMD
Max. off-state voltage: 16V
Breakdown voltage: 23V
Kind of package: reel; tape
Type of diode: TVS
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NIV1161MTTAG |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape; automotive industry
Case: WDFN6
Mounting: SMD
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape; automotive industry
Case: WDFN6
Mounting: SMD
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS
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NIV2161MTTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 23V; WDFN10; reel,tape
Case: WDFN10
Mounting: SMD
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; 23V; WDFN10; reel,tape
Case: WDFN10
Mounting: SMD
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
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MC74AC373DTR2G |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AC
Manufacturer series: AC
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AC
Manufacturer series: AC
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