| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MMBZ6V8ALT1G | ONSEMI |
 Category: Protection diodes - arraysDescription: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; ESD; SOT23 Type of diode: TVS array Peak pulse power dissipation: 24W Breakdown voltage: 6.8V Semiconductor structure: common anode; double Case: SOT23 Mounting: SMD Kind of package: reel; tape Leakage current: 0.5µA Number of channels: 2 Max. forward impulse current: 2.5A Tolerance: ±5% Max. off-state voltage: 4.5V Version: ESD |
на замовлення 7784 шт: термін постачання 14-30 дні (днів) |
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NSQA6V8AW5T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.4...7.1V Semiconductor structure: common anode; quadruple Case: SC88A Mounting: SMD Kind of package: reel; tape Number of channels: 4 Max. off-state voltage: 5V |
на замовлення 2634 шт: термін постачання 14-30 дні (днів) |
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| NZL6V8AXV3T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.8V; double,common anode; SC89; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 6.8V Semiconductor structure: common anode; double Case: SC89 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Max. off-state voltage: 4.5V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NZQA6V8AXV5T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; ESD; SOT553 Type of diode: TVS array Peak pulse power dissipation: 20W Breakdown voltage: 6.46...7.14V Semiconductor structure: common anode Case: SOT553 Mounting: SMD Kind of package: reel; tape Number of channels: 4 Max. forward impulse current: 1.6A Max. off-state voltage: 4.3V Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SZMMBZ6V8ALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Peak pulse power dissipation: 25W Breakdown voltage: 6.8V Semiconductor structure: common anode; double Case: SOT23 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Max. forward impulse current: 2.5A Tolerance: ±5% Max. off-state voltage: 4.5V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SZNSQA6V8AW5T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.4...7.1V Semiconductor structure: common anode; quadruple Case: SC88A Mounting: SMD Kind of package: reel; tape Number of channels: 4 Max. off-state voltage: 5V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDC6318P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6 Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.5A Gate charge: 8nC On-state resistance: 0.2Ω Power dissipation: 0.96W Gate-source voltage: ±8V Kind of channel: enhancement |
на замовлення 2287 шт: термін постачання 14-30 дні (днів) |
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| NTD20N03L27T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 74W Case: DPAK Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
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1N5344BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
на замовлення 1584 шт: термін постачання 14-30 дні (днів) |
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1N5344BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: bulk Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
на замовлення 743 шт: термін постачання 14-30 дні (днів) |
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| 1N5344BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5347BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 10V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 10V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5341BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMBT2369ALT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 40...120 Mounting: SMD Kind of package: reel; tape |
на замовлення 2785 шт: термін постачання 14-30 дні (днів) |
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MMBT2369LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 20...120 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMMBT2369ALT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 40...120 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC1G14DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: reel; tape |
на замовлення 3163 шт: термін постачання 14-30 дні (днів) |
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MC74HC1G14DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Mounting: SMD Case: TSOP5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: reel; tape |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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| MC74HC1G14DBVT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A Type of integrated circuit: digital Number of channels: 1 Number of inputs: 1 Mounting: SMD Case: SC74A Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Supply voltage: 2...6V Kind of output: push-pull Technology: CMOS Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DFT2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA Type of integrated circuit: digital Number of channels: 1 Number of inputs: 1 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Supply voltage: 2...6V Kind of output: push-pull Technology: CMOS Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A Type of integrated circuit: digital Number of channels: 1 Number of inputs: 1 Mounting: SMD Case: SC74A Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Supply voltage: 2...6V Kind of output: push-pull Technology: CMOS Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DFT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA Type of integrated circuit: digital Number of channels: 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V Operating temperature: -55...125°C Family: HC Kind of output: push-pull Quiescent current: 1µA Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| LM2575D2T-ADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: D2PAK-5 Mounting: SMD Frequency: 42...63kHz Topology: buck Operating temperature: -40...125°C Number of channels: 1 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14503BDG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube Kind of package: tube Technology: CMOS Type of integrated circuit: digital Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Number of inputs: 1 Supply voltage: 3...18V DC Number of channels: 6 Kind of integrated circuit: 3-state; buffer; hex Kind of output: 3-state |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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| FJV1845FMTF | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB Case: SOT23; TO236AB Type of transistor: NPN Mounting: SMD Collector current: 50mA Power dissipation: 0.3W Collector-emitter voltage: 120V Current gain: 300...600 Frequency: 50MHz Polarisation: bipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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HUF75639P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement |
на замовлення 104 шт: термін постачання 14-30 дні (днів) |
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| NC7WZ02L8X-L22185 | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
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FDWS9509L-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8 Case: DFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar Drain current: -65A Drain-source voltage: -40V Gate charge: 67nC On-state resistance: 13mΩ Gate-source voltage: ±16V Power dissipation: 107W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RB751S40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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M74VHC1GU04DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC Case: TSOP5 Operating temperature: -55...125°C Supply voltage: 2...5.5V DC Number of inputs: 1 Manufacturer series: VHC Family: VHC Technology: CMOS Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: inverter Kind of gate: NOT Kind of package: reel; tape Mounting: SMD |
на замовлення 2873 шт: термін постачання 14-30 дні (днів) |
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MC74LCXU04DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube Case: SOIC14 Operating temperature: -40...85°C Supply voltage: 1.5...3.6V DC Number of inputs: 1 Family: LCXU Technology: CMOS Type of integrated circuit: digital Number of channels: 6 Kind of integrated circuit: hex; inverter Kind of gate: NOT Kind of package: tube Mounting: SMD Integrated circuit features: tolerates a voltage of 5V on the inputs |
на замовлення 258 шт: термін постачання 14-30 дні (днів) |
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| MJD41CRLG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MJD41CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NJVMJD41CT4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC100ELT25DG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC Mounting: SMD Case: SO8 Kind of package: tube Manufacturer series: 100ELT Number of channels: 1 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Number of inputs: 2 Number of outputs: 1 Kind of integrated circuit: logic level voltage translator Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC100ELT23DTG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC Mounting: SMD Case: TSSOP8 Kind of package: tube Manufacturer series: 100ELT Number of channels: 2 Operating temperature: -40...85°C Supply voltage: 4.75...5.25V DC Number of inputs: 4 Number of outputs: 2 Kind of integrated circuit: logic level voltage translator Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS16HT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SBAS16HT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 36A Leakage current: 30µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBR745G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.57V Kind of package: tube Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm Max. load current: 7.5A |
на замовлення 264 шт: термін постачання 14-30 дні (днів) |
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| NSR201MXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape Case: X2DFN2 Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Capacitance: 0.15pF Load current: 50mA Max. forward voltage: 0.32V Max. off-state voltage: 2V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCH190N65F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Power dissipation: 208W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 61.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NVB190N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCP190N65F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 61.8A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCP190N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Power dissipation: 144W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCP190N65S3R0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Power dissipation: 144W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTB190N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 50A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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NTP190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 50A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
| NTHL190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.7A Power dissipation: 162W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.165Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 50A |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTMT190N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Power dissipation: 129W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 45A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTMT190N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 50A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
 |
NTPF190N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 45A |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
|
NTPF190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MC74HC05ADG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC Kind of output: open drain Technology: CMOS Number of inputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
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MC74HC05ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC Kind of output: open drain Technology: CMOS Number of inputs: 1 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
 |
MC74HC05ADTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC Kind of output: open drain Technology: CMOS Number of inputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MC74HC05ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; HC Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC Kind of output: open drain Manufacturer series: HC Kind of integrated circuit: hex; inverter Technology: CMOS Number of inputs: 1 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
 |
MC33071DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Case: SO8 Operating temperature: -40...85°C Mounting: SMT Kind of package: reel; tape Number of channels: single; 1 Input offset current: 300nA Input bias current: 0.7µA Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 13V/μs Bandwidth: 4.5MHz |
на замовлення 2327 шт: термін постачання 14-30 дні (днів) |
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| MC33071ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Case: SO8 Operating temperature: -40...85°C Mounting: SMT Kind of package: reel; tape Number of channels: single; 1 Input offset current: 300nA Input bias current: 0.7µA Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 13V/μs Bandwidth: 4.5MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
FCP104N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Case: TO220-3 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.104Ω Power dissipation: 357W |
товару немає в наявності |
В кошику од. на суму грн. |
| MMBZ6V8ALT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; ESD; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 24W
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 2.5A
Tolerance: ±5%
Max. off-state voltage: 4.5V
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; ESD; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 24W
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 2.5A
Tolerance: ±5%
Max. off-state voltage: 4.5V
Version: ESD
на замовлення 7784 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.53 грн |
| 53+ | 7.91 грн |
| 61+ | 6.84 грн |
| 89+ | 4.68 грн |
| 108+ | 3.83 грн |
| 250+ | 2.83 грн |
| 500+ | 2.33 грн |
| 1000+ | 2.12 грн |
| 3000+ | 1.75 грн |
| NSQA6V8AW5T2G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Case: SC88A
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. off-state voltage: 5V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Case: SC88A
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. off-state voltage: 5V
на замовлення 2634 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.27 грн |
| 17+ | 25.20 грн |
| 100+ | 17.95 грн |
| 500+ | 13.34 грн |
| NZL6V8AXV3T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; double,common anode; SC89; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Max. off-state voltage: 4.5V
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; double,common anode; SC89; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Max. off-state voltage: 4.5V
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NZQA6V8AXV5T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; ESD; SOT553
Type of diode: TVS array
Peak pulse power dissipation: 20W
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode
Case: SOT553
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. forward impulse current: 1.6A
Max. off-state voltage: 4.3V
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; ESD; SOT553
Type of diode: TVS array
Peak pulse power dissipation: 20W
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode
Case: SOT553
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. forward impulse current: 1.6A
Max. off-state voltage: 4.3V
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| SZMMBZ6V8ALT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Peak pulse power dissipation: 25W
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Max. forward impulse current: 2.5A
Tolerance: ±5%
Max. off-state voltage: 4.5V
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Peak pulse power dissipation: 25W
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Max. forward impulse current: 2.5A
Tolerance: ±5%
Max. off-state voltage: 4.5V
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| SZNSQA6V8AW5T2G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Case: SC88A
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. off-state voltage: 5V
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Case: SC88A
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Max. off-state voltage: 5V
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| FDC6318P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Gate charge: 8nC
On-state resistance: 0.2Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Gate charge: 8nC
On-state resistance: 0.2Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
Kind of channel: enhancement
на замовлення 2287 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 62.97 грн |
| 10+ | 44.14 грн |
| 25+ | 38.21 грн |
| 100+ | 30.47 грн |
| 250+ | 29.15 грн |
| NTD20N03L27T4G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 1N5344BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
на замовлення 1584 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.27 грн |
| 19+ | 22.57 грн |
| 50+ | 17.05 грн |
| 100+ | 14.91 грн |
| 500+ | 11.53 грн |
| 1N5344BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
на замовлення 743 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 15.96 грн |
| 30+ | 14.17 грн |
| 31+ | 13.59 грн |
| 100+ | 12.77 грн |
| 500+ | 12.35 грн |
| 1N5344BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
товару немає в наявності
В кошику
од. на суму грн.
| 1N5347BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 10V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 10V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 10V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 10V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
товару немає в наявності
В кошику
од. на суму грн.
| 1N5341BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
товару немає в наявності
В кошику
од. на суму грн.
| MMBT2369ALT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
на замовлення 2785 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.64 грн |
| 53+ | 7.82 грн |
| 78+ | 5.34 грн |
| 100+ | 4.46 грн |
| 500+ | 3.00 грн |
| 1000+ | 2.57 грн |
| MMBT2369LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
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| SMMBT2369ALT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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| MC74HC1G14DFT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
на замовлення 3163 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 79+ | 5.27 грн |
| 93+ | 4.45 грн |
| 98+ | 4.22 грн |
| 103+ | 4.00 грн |
| MC74HC1G14DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.18 грн |
| MC74HC1G14DBVT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
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| MC74HC1G14DFT2G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
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| MC74HC1G14DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
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| MC74HC1G14DFT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
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| MC74HC1G14DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
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Мінімальне замовлення: 3000 шт
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| LM2575D2T-ADJR4G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: reel; tape
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| MC14503BDG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of inputs: 1
Supply voltage: 3...18V DC
Number of channels: 6
Kind of integrated circuit: 3-state; buffer; hex
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of inputs: 1
Supply voltage: 3...18V DC
Number of channels: 6
Kind of integrated circuit: 3-state; buffer; hex
Kind of output: 3-state
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 49.67 грн |
| FJV1845FMTF |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 300...600
Frequency: 50MHz
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 300...600
Frequency: 50MHz
Polarisation: bipolar
Kind of package: reel; tape
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| HUF75639P3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 104 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 180.93 грн |
| 10+ | 152.36 грн |
| 50+ | 107.89 грн |
| NC7WZ02L8X-L22185 |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
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Мінімальне замовлення: 5000 шт
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| FDWS9509L-F085 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
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| RB751S40T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.12 грн |
| M74VHC1GU04DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC
Case: TSOP5
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Number of inputs: 1
Manufacturer series: VHC
Family: VHC
Technology: CMOS
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: inverter
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC
Case: TSOP5
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Number of inputs: 1
Manufacturer series: VHC
Family: VHC
Technology: CMOS
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: inverter
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
на замовлення 2873 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.72 грн |
| 20+ | 20.59 грн |
| 24+ | 17.71 грн |
| 27+ | 15.65 грн |
| 50+ | 12.02 грн |
| 100+ | 8.65 грн |
| 250+ | 8.07 грн |
| 500+ | 7.41 грн |
| 1000+ | 6.42 грн |
| MC74LCXU04DG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Case: SOIC14
Operating temperature: -40...85°C
Supply voltage: 1.5...3.6V DC
Number of inputs: 1
Family: LCXU
Technology: CMOS
Type of integrated circuit: digital
Number of channels: 6
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Kind of package: tube
Mounting: SMD
Integrated circuit features: tolerates a voltage of 5V on the inputs
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Case: SOIC14
Operating temperature: -40...85°C
Supply voltage: 1.5...3.6V DC
Number of inputs: 1
Family: LCXU
Technology: CMOS
Type of integrated circuit: digital
Number of channels: 6
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Kind of package: tube
Mounting: SMD
Integrated circuit features: tolerates a voltage of 5V on the inputs
на замовлення 258 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.63 грн |
| 11+ | 37.64 грн |
| 25+ | 29.40 грн |
| 55+ | 24.13 грн |
| 110+ | 22.81 грн |
| MJD41CRLG |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| MJD41CT4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| NJVMJD41CT4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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| MC100ELT25DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC
Mounting: SMD
Case: SO8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of inputs: 2
Number of outputs: 1
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC
Mounting: SMD
Case: SO8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of inputs: 2
Number of outputs: 1
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
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| MC100ELT23DTG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Mounting: SMD
Case: TSSOP8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 2
Operating temperature: -40...85°C
Supply voltage: 4.75...5.25V DC
Number of inputs: 4
Number of outputs: 2
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Mounting: SMD
Case: TSSOP8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 2
Operating temperature: -40...85°C
Supply voltage: 4.75...5.25V DC
Number of inputs: 4
Number of outputs: 2
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
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| BAS16HT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
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| SBAS16HT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
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| MBR745G |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
на замовлення 264 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.89 грн |
| 11+ | 40.11 грн |
| 12+ | 35.33 грн |
| NSR201MXT5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.15pF
Load current: 50mA
Max. forward voltage: 0.32V
Max. off-state voltage: 2V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.15pF
Load current: 50mA
Max. forward voltage: 0.32V
Max. off-state voltage: 2V
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| FCH190N65F-F155 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 61.8A
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| NVB190N65S3F |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
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| FCP190N65F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 61.8A
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| FCP190N65S3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42.5A
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| FCP190N65S3R0 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42.5A
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| NTB190N65S3HF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NTP190N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NTHL190N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
товару немає в наявності
Мінімальне замовлення: 450 шт
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од. на суму грн.
| NTMT190N65S3H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 129W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 129W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTMT190N65S3HF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTPF190N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 45A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 45A
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NTPF190N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
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| MC74HC05ADG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
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| MC74HC05ADR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| MC74HC05ADTG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
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| MC74HC05ADTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Manufacturer series: HC
Kind of integrated circuit: hex; inverter
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Manufacturer series: HC
Kind of integrated circuit: hex; inverter
Technology: CMOS
Number of inputs: 1
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| MC33071DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
на замовлення 2327 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.82 грн |
| 15+ | 28.50 грн |
| MC33071ADR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
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| FCP104N60F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.104Ω
Power dissipation: 357W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.104Ω
Power dissipation: 357W
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