| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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FDC6318P | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6 Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.5A Gate charge: 8nC On-state resistance: 0.2Ω Power dissipation: 0.96W Gate-source voltage: ±8V Kind of channel: enhancement |
на замовлення 2287 шт: термін постачання 14-30 дні (днів) |
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| NTD20N03L27T4G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 74W Case: DPAK Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
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1N5344BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
на замовлення 1584 шт: термін постачання 14-30 дні (днів) |
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1N5344BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: bulk Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
на замовлення 743 шт: термін постачання 14-30 дні (днів) |
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| 1N5344BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5347BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 10V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 10V Case: CASE017AA Mounting: THT Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5341BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMBT2369ALT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 15V Power dissipation: 0.225/0.3W Polarisation: bipolar Type of transistor: NPN Current gain: 40...120 Kind of package: reel; tape Case: SOT23; TO236AB Collector current: 0.2A |
на замовлення 2765 шт: термін постачання 14-30 дні (днів) |
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MMBT2369LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 20...120 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMMBT2369ALT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 40...120 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DFT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: reel; tape |
на замовлення 3163 шт: термін постачання 14-30 дні (днів) |
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MC74HC1G14DTT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Mounting: SMD Case: TSOP5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of input: with Schmitt trigger Kind of package: reel; tape |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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| MC74HC1G14DBVT1G-Q | ONSEMI |
Category: Gates, invertersDescription: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A Type of integrated circuit: digital Number of channels: 1 Number of inputs: 1 Mounting: SMD Case: SC74A Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Supply voltage: 2...6V Kind of output: push-pull Technology: CMOS Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DFT2G-Q | ONSEMI |
Category: Gates, invertersDescription: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA Type of integrated circuit: digital Number of channels: 1 Number of inputs: 1 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Supply voltage: 2...6V Kind of output: push-pull Technology: CMOS Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DBVT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A Type of integrated circuit: digital Number of channels: 1 Number of inputs: 1 Mounting: SMD Case: SC74A Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Supply voltage: 2...6V Kind of output: push-pull Technology: CMOS Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DFT1G-Q | ONSEMI |
Category: Gates, invertersDescription: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA Type of integrated circuit: digital Number of channels: 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V Operating temperature: -55...125°C Family: HC Kind of output: push-pull Quiescent current: 1µA Kind of integrated circuit: inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DFT2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| LM2575D2T-ADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: D2PAK-5 Mounting: SMD Frequency: 42...63kHz Topology: buck Operating temperature: -40...125°C Number of channels: 1 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14503BDG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Kind of output: 3-state Operating temperature: -55...125°C Technology: CMOS Number of inputs: 1 Kind of package: tube Case: SOIC16 Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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| FJV1845FMTF | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB Case: SOT23; TO236AB Type of transistor: NPN Mounting: SMD Collector current: 50mA Power dissipation: 0.3W Collector-emitter voltage: 120V Current gain: 300...600 Frequency: 50MHz Polarisation: bipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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HUF75639P3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB Mounting: THT Power dissipation: 200W Gate charge: 130nC Polarisation: unipolar Technology: UltraFET® Drain current: 56A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 25mΩ |
на замовлення 78 шт: термін постачання 14-30 дні (днів) |
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| NC7WZ02L8X-L22185 | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
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FDWS9509L-F085 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8 Case: DFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar Drain current: -65A Drain-source voltage: -40V Gate charge: 67nC On-state resistance: 13mΩ Gate-source voltage: ±16V Power dissipation: 107W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RB751S40T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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M74VHC1GU04DTT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 1 Technology: CMOS Mounting: SMD Case: TSOP5 Manufacturer series: VHC Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 2...5.5V DC Number of inputs: 1 Family: VHC Kind of gate: NOT |
на замовлення 2653 шт: термін постачання 14-30 дні (днів) |
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MC74LCXU04DG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube Case: SOIC14 Operating temperature: -40...85°C Supply voltage: 1.5...3.6V DC Number of inputs: 1 Family: LCXU Technology: CMOS Type of integrated circuit: digital Number of channels: 6 Kind of integrated circuit: hex; inverter Kind of gate: NOT Kind of package: tube Mounting: SMD Integrated circuit features: tolerates a voltage of 5V on the inputs |
на замовлення 258 шт: термін постачання 14-30 дні (днів) |
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MJD41CRLG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD41CT4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NJVMJD41CT4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC100ELT25DG | ONSEMI |
Category: Level translatorsDescription: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC Mounting: SMD Case: SO8 Kind of package: tube Manufacturer series: 100ELT Number of channels: 1 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Number of inputs: 2 Number of outputs: 1 Kind of integrated circuit: logic level voltage translator Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC100ELT23DTG | ONSEMI |
Category: Level translatorsDescription: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC Mounting: SMD Case: TSSOP8 Kind of package: tube Manufacturer series: 100ELT Number of channels: 2 Operating temperature: -40...85°C Supply voltage: 4.75...5.25V DC Number of inputs: 4 Number of outputs: 2 Kind of integrated circuit: logic level voltage translator Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS16HT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SBAS16HT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 36A Leakage current: 30µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBR745G | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.57V Kind of package: tube Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm Max. load current: 7.5A |
на замовлення 264 шт: термін постачання 14-30 дні (днів) |
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| NSR201MXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape Case: X2DFN2 Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Capacitance: 0.15pF Load current: 50mA Max. forward voltage: 0.32V Max. off-state voltage: 2V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCH190N65F-F155 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Power dissipation: 208W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 61.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NVB190N65S3F | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCP190N65F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 61.8A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCP190N65S3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Power dissipation: 144W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCP190N65S3R0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Power dissipation: 144W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTB190N65S3HF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 50A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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NTP190N65S3HF | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 50A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
| NTHL190N65S3HF | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.7A Power dissipation: 162W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.165Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 50A |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTMT190N65S3H | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Power dissipation: 129W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 45A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTMT190N65S3HF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 162W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 50A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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NTPF190N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 45A |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NTPF190N65S3HF | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 50A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC05ADG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC Kind of output: open drain Technology: CMOS Number of inputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC05ADR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC Kind of output: open drain Technology: CMOS Number of inputs: 1 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC05ADTG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC Kind of output: open drain Technology: CMOS Number of inputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC05ADTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; HC Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC Kind of integrated circuit: hex; inverter Manufacturer series: HC Kind of output: open drain Technology: CMOS Number of inputs: 1 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC33071DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Case: SO8 Operating temperature: -40...85°C Mounting: SMT Kind of package: reel; tape Number of channels: single; 1 Input offset current: 300nA Input bias current: 0.7µA Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 13V/μs Bandwidth: 4.5MHz |
на замовлення 2327 шт: термін постачання 14-30 дні (днів) |
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| MC33071ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Case: SO8 Operating temperature: -40...85°C Mounting: SMT Kind of package: reel; tape Number of channels: single; 1 Input offset current: 300nA Input bias current: 0.7µA Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 13V/μs Bandwidth: 4.5MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FCP104N60F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Case: TO220-3 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.104Ω Power dissipation: 357W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FCH104N60F-F085 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Case: TO247 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.104Ω Power dissipation: 357W Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14049UBDG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Operating temperature: -55...125°C Technology: CMOS Kind of package: tube Case: SO16 Kind of integrated circuit: buffer; inverting Number of channels: 6 |
на замовлення 640 шт: термін постачання 14-30 дні (днів) |
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MC14049BDR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Operating temperature: -55...125°C Technology: CMOS Kind of package: reel; tape Case: SO16 Kind of integrated circuit: buffer; inverting Number of channels: 6 |
на замовлення 94 шт: термін постачання 14-30 дні (днів) |
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MC14049UBDTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP16 Type of integrated circuit: digital Kind of integrated circuit: buffer; hex; inverter Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP16 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FOD852300W | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4 Mounting: THT Collector-emitter voltage: 300V CTR@If: 1000-15000%@1mA Kind of output: Darlington Insulation voltage: 5kV Type of optocoupler: optocoupler Turn-on time: 0.1ms Case: DIP4 Turn-off time: 20µs Number of channels: 1 |
на замовлення 1295 шт: термін постачання 14-30 дні (днів) |
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MMBD452LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape Mounting: SMD Max. off-state voltage: 30V Kind of package: reel; tape Semiconductor structure: double series Case: SOT23 Capacitance: 1.5pF Type of diode: Schottky switching Max. forward voltage: 0.6V |
на замовлення 8960 шт: термін постачання 14-30 дні (днів) |
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| FDC6318P |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Gate charge: 8nC
On-state resistance: 0.2Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Gate charge: 8nC
On-state resistance: 0.2Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
Kind of channel: enhancement
на замовлення 2287 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.54 грн |
| 10+ | 44.54 грн |
| 25+ | 38.56 грн |
| 100+ | 30.75 грн |
| 250+ | 29.42 грн |
| NTD20N03L27T4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 1N5344BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
на замовлення 1584 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.53 грн |
| 19+ | 22.77 грн |
| 50+ | 17.20 грн |
| 100+ | 15.04 грн |
| 500+ | 11.63 грн |
| 1N5344BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
на замовлення 743 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.11 грн |
| 30+ | 14.29 грн |
| 31+ | 13.71 грн |
| 100+ | 12.88 грн |
| 500+ | 12.46 грн |
| 1N5344BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
товару немає в наявності
В кошику
од. на суму грн.
| 1N5347BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 10V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 10V
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 10V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 10V
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Tolerance: ±5%
товару немає в наявності
В кошику
од. на суму грн.
| 1N5341BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
товару немає в наявності
В кошику
од. на суму грн.
| MMBT2369ALT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 15V
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40...120
Kind of package: reel; tape
Case: SOT23; TO236AB
Collector current: 0.2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 15V
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40...120
Kind of package: reel; tape
Case: SOT23; TO236AB
Collector current: 0.2A
на замовлення 2765 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.53 грн |
| 46+ | 9.14 грн |
| 53+ | 7.89 грн |
| 78+ | 5.38 грн |
| 100+ | 4.58 грн |
| 500+ | 3.20 грн |
| 1000+ | 2.78 грн |
| 1500+ | 2.56 грн |
| MMBT2369LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
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В кошику
од. на суму грн.
| SMMBT2369ALT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC1G14DFT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
на замовлення 3163 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.16 грн |
| 79+ | 5.32 грн |
| 93+ | 4.49 грн |
| 98+ | 4.25 грн |
| 103+ | 4.04 грн |
| MC74HC1G14DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of package: reel; tape
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.42 грн |
| MC74HC1G14DBVT1G-Q |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
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В кошику
од. на суму грн.
| MC74HC1G14DFT2G-Q |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC1G14DBVT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; SC74A
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Kind of output: push-pull
Technology: CMOS
Kind of integrated circuit: inverter; Schmitt trigger
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| MC74HC1G14DFT1G-Q |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; CMOS; SMD; 1uA
Type of integrated circuit: digital
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
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| MC74HC1G14DFT2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
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Мінімальне замовлення: 3000 шт
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| LM2575D2T-ADJR4G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: reel; tape
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| MC14503BDG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 1
Kind of package: tube
Case: SOIC16
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16; tube
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 1
Kind of package: tube
Case: SOIC16
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.11 грн |
| FJV1845FMTF |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 300...600
Frequency: 50MHz
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 300...600
Frequency: 50MHz
Polarisation: bipolar
Kind of package: reel; tape
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| HUF75639P3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Mounting: THT
Power dissipation: 200W
Gate charge: 130nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 25mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Mounting: THT
Power dissipation: 200W
Gate charge: 130nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 25mΩ
на замовлення 78 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 182.56 грн |
| 10+ | 153.73 грн |
| 50+ | 108.86 грн |
| NC7WZ02L8X-L22185 |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
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Мінімальне замовлення: 5000 шт
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| FDWS9509L-F085 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
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| RB751S40T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.45 грн |
| M74VHC1GU04DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Number of inputs: 1
Family: VHC
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Number of inputs: 1
Family: VHC
Kind of gate: NOT
на замовлення 2653 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.95 грн |
| 20+ | 20.77 грн |
| 24+ | 17.87 грн |
| 27+ | 15.79 грн |
| 50+ | 12.13 грн |
| 100+ | 8.73 грн |
| 250+ | 8.14 грн |
| 500+ | 7.48 грн |
| 1000+ | 6.40 грн |
| MC74LCXU04DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Case: SOIC14
Operating temperature: -40...85°C
Supply voltage: 1.5...3.6V DC
Number of inputs: 1
Family: LCXU
Technology: CMOS
Type of integrated circuit: digital
Number of channels: 6
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Kind of package: tube
Mounting: SMD
Integrated circuit features: tolerates a voltage of 5V on the inputs
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Case: SOIC14
Operating temperature: -40...85°C
Supply voltage: 1.5...3.6V DC
Number of inputs: 1
Family: LCXU
Technology: CMOS
Type of integrated circuit: digital
Number of channels: 6
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Kind of package: tube
Mounting: SMD
Integrated circuit features: tolerates a voltage of 5V on the inputs
на замовлення 258 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.22 грн |
| 11+ | 37.98 грн |
| 25+ | 29.67 грн |
| 55+ | 24.35 грн |
| 110+ | 23.02 грн |
| MJD41CRLG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| MJD41CT4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| NJVMJD41CT4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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| MC100ELT25DG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC
Mounting: SMD
Case: SO8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of inputs: 2
Number of outputs: 1
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; 4.5÷5.5VDC
Mounting: SMD
Case: SO8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Number of inputs: 2
Number of outputs: 1
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
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| MC100ELT23DTG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Mounting: SMD
Case: TSSOP8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 2
Operating temperature: -40...85°C
Supply voltage: 4.75...5.25V DC
Number of inputs: 4
Number of outputs: 2
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Mounting: SMD
Case: TSSOP8
Kind of package: tube
Manufacturer series: 100ELT
Number of channels: 2
Operating temperature: -40...85°C
Supply voltage: 4.75...5.25V DC
Number of inputs: 4
Number of outputs: 2
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
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| BAS16HT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
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| SBAS16HT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
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| MBR745G |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. load current: 7.5A
на замовлення 264 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.32 грн |
| 11+ | 40.47 грн |
| 12+ | 35.65 грн |
| NSR201MXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.15pF
Load current: 50mA
Max. forward voltage: 0.32V
Max. off-state voltage: 2V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.15pF
Load current: 50mA
Max. forward voltage: 0.32V
Max. off-state voltage: 2V
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| FCH190N65F-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 61.8A
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| NVB190N65S3F |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
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| FCP190N65F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 61.8A
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| FCP190N65S3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42.5A
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| FCP190N65S3R0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42.5A
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| NTB190N65S3HF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
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Мінімальне замовлення: 800 шт
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| NTP190N65S3HF |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
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Мінімальне замовлення: 800 шт
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| NTHL190N65S3HF |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
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Мінімальне замовлення: 450 шт
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| NTMT190N65S3H |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 129W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 129W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
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Мінімальне замовлення: 3000 шт
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| NTMT190N65S3HF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 162W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
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Мінімальне замовлення: 3000 шт
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| NTPF190N65S3H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 45A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 45A
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Мінімальне замовлення: 1000 шт
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| NTPF190N65S3HF |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50A
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| MC74HC05ADG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
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| MC74HC05ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
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Мінімальне замовлення: 2500 шт
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| MC74HC05ADTG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
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| MC74HC05ADTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of integrated circuit: hex; inverter
Manufacturer series: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Kind of integrated circuit: hex; inverter
Manufacturer series: HC
Kind of output: open drain
Technology: CMOS
Number of inputs: 1
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Мінімальне замовлення: 2500 шт
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| MC33071DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
на замовлення 2327 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.11 грн |
| 15+ | 28.75 грн |
| MC33071ADR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
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| FCP104N60F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.104Ω
Power dissipation: 357W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.104Ω
Power dissipation: 357W
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| FCH104N60F-F085 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO247
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.104Ω
Power dissipation: 357W
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Case: TO247
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.104Ω
Power dissipation: 357W
Application: automotive industry
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| MC14049UBDG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
на замовлення 640 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.32 грн |
| 20+ | 21.52 грн |
| 25+ | 19.53 грн |
| 48+ | 19.03 грн |
| MC14049BDR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: reel; tape
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: reel; tape
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.80 грн |
| 18+ | 23.85 грн |
| 25+ | 21.27 грн |
| MC14049UBDTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex; inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex; inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| FOD852300W |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4
Mounting: THT
Collector-emitter voltage: 300V
CTR@If: 1000-15000%@1mA
Kind of output: Darlington
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 0.1ms
Case: DIP4
Turn-off time: 20µs
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 300V; DIP4
Mounting: THT
Collector-emitter voltage: 300V
CTR@If: 1000-15000%@1mA
Kind of output: Darlington
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 0.1ms
Case: DIP4
Turn-off time: 20µs
Number of channels: 1
на замовлення 1295 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.54 грн |
| 10+ | 41.80 грн |
| 100+ | 36.48 грн |
| MMBD452LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape
Mounting: SMD
Max. off-state voltage: 30V
Kind of package: reel; tape
Semiconductor structure: double series
Case: SOT23
Capacitance: 1.5pF
Type of diode: Schottky switching
Max. forward voltage: 0.6V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape
Mounting: SMD
Max. off-state voltage: 30V
Kind of package: reel; tape
Semiconductor structure: double series
Case: SOT23
Capacitance: 1.5pF
Type of diode: Schottky switching
Max. forward voltage: 0.6V
на замовлення 8960 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.74 грн |
| 53+ | 7.98 грн |
| 61+ | 6.81 грн |
| 74+ | 5.65 грн |
| 75+ | 5.57 грн |

































