| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NVHL027N65S3F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 187.5A; 595W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 75A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 27.4mΩ Mounting: THT Gate charge: 227nC Kind of package: tube Kind of channel: enhancement |
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| NTH4L027N65S3F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 259nC Kind of package: tube Kind of channel: enhancement |
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| NVMFS027N10MCLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 137A; 23W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 137A Power dissipation: 23W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVTFWS027N10MCLTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 119A Power dissipation: 23W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhancement |
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FDS4480 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Kind of package: reel; tape Case: SO8 Mounting: SMD Gate charge: 41nC On-state resistance: 21mΩ Power dissipation: 2.5W Drain current: 10.8A Drain-source voltage: 40V Pulsed drain current: 45A Polarisation: unipolar Kind of channel: enhancement |
на замовлення 2338 шт: термін постачання 21-30 дні (днів) |
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MJW21195G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3 Polarisation: bipolar Case: TO247-3 Mounting: THT Kind of package: tube Type of transistor: PNP Power dissipation: 200W Collector current: 16A Collector-emitter voltage: 250V Frequency: 4MHz |
на замовлення 167 шт: термін постачання 21-30 дні (днів) |
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MMBT589LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.31/0.71W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1521 шт: термін постачання 21-30 дні (днів) |
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| MUN5132DW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 4.7kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.385W Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 3000pcs. Base-emitter resistor: 4.7kΩ Base resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
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| MC74LVX132DR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14NB Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14NB Supply voltage: 2...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVX Kind of integrated circuit: Schmitt trigger Manufacturer series: LVX |
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| MC74LVX132DTG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14 Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...125°C Kind of package: tube Kind of input: with Schmitt trigger Kind of integrated circuit: Schmitt trigger Manufacturer series: LVX |
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| NLVVHC1G132DFT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC88A Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger |
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NLVVHC1G132DTT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP5 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Kind of input: with Schmitt trigger |
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| 1N5339BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 5.6V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N53xxB |
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| D-STPR-GEVK | ONSEMI |
Category: Development kits - othersDescription: Expansion board; prototype board; Comp: AMIS30543 Kit contents: prototype board Components: AMIS30543 Interface: I2C; I2C - Slave; SPI Type of accessories for development kits: expansion board development kits accessories features: Arduino Shield compatible; stepper motor driver Kind of connector: pin strips; screw |
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| FCH070N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: THT Gate charge: 128nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 156A |
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| FCH170N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 227W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 66A |
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| FCP170N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 227W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 66A |
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| FDB0170N607L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 173nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1620A |
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NTJD1155LT1G | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SC88 On-state resistance: 130/320mΩ Kind of package: reel; tape Supply voltage: 1.8...8V DC Control voltage: 1.5...8V DC |
на замовлення 647 шт: термін постачання 21-30 дні (днів) |
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SZMMBZ20VALT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2 Case: SOT23 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 1.4A Number of channels: 2 Type of diode: TVS array Tolerance: ±5% Max. off-state voltage: 17V Breakdown voltage: 20V Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Application: automotive industry |
на замовлення 5500 шт: термін постачання 21-30 дні (днів) |
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NTF3055L108T1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223 Power dissipation: 1.3W Mounting: SMD Type of transistor: N-MOSFET Case: SOT223 Kind of package: reel; tape Polarisation: unipolar Gate charge: 15nC On-state resistance: 0.12Ω Drain current: 1.4A Pulsed drain current: 9A Gate-source voltage: ±15V Drain-source voltage: 60V Kind of channel: enhancement |
на замовлення 1301 шт: термін постачання 21-30 дні (днів) |
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| 2N6292G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Power dissipation: 40W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 4MHz Collector current: 7A Collector-emitter voltage: 80V |
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SS34 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W Mounting: SMD Max. forward voltage: 0.5V Power dissipation: 2.27W Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Kind of package: reel; tape Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode |
на замовлення 3160 шт: термін постачання 21-30 дні (днів) |
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LM393N | ONSEMI |
Category: THT comparatorsDescription: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Operating voltage: 3...32V Mounting: THT Case: DIP8 Operating temperature: 0...70°C Input offset voltage: 9mV Kind of package: tube Input offset current: 150nA |
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| NSR10F40NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: 0502 Mounting: SMD Max. forward voltage: 0.49V Load current: 1A Max. forward impulse current: 18A Max. off-state voltage: 40V |
на замовлення 4500 шт: термін постачання 21-30 дні (днів) |
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| NSR10F20NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; 0502; SMD; 20V; 1A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: 0502 Mounting: SMD Max. forward voltage: 0.45V Load current: 1A Max. forward impulse current: 18A Max. off-state voltage: 20V |
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| NSR1030QMUTWG | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4 Electrical mounting: SMT Type of bridge rectifier: single-phase Kind of package: reel; tape Features of semiconductor devices: Schottky Case: uDFN4 Max. forward voltage: 0.6V Load current: 1A Max. forward impulse current: 12A Max. off-state voltage: 30V |
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| NSR10F30NXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; 0502; SMD; 30V; 1A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: 0502 Mounting: SMD Max. forward voltage: 0.47V Load current: 1A Max. forward impulse current: 18A Max. off-state voltage: 30V |
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BVSS84LT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.225W On-state resistance: 10Ω Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET Drain-source voltage: -50V Drain current: -0.13A |
на замовлення 3151 шт: термін постачання 21-30 дні (днів) |
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SZNUP3105LT1G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 35.6V; bidirectional; SOT23; reel,tape Case: SOT23 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 32V Breakdown voltage: 35.6V Application: automotive industry Semiconductor structure: bidirectional Type of diode: TVS |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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MM5Z12VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G |
на замовлення 5995 шт: термін постачання 21-30 дні (днів) |
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| SZMM5Z12VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G Application: automotive industry |
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| MARSZMM5Z12VT1G | ONSEMI |
Category: Unclassified Description: MARSZMM5Z12VT1G |
на замовлення 192000 шт: термін постачання 21-30 дні (днів) |
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| SZMM5Z3V3T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G Application: automotive industry |
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| MM5Z4717T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5Z4xxxT1G |
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| SZMM5Z4717T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5Z4xxxT1G Application: automotive industry |
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| SZMM5Z5V1T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G Application: automotive industry |
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| MMBTA14 | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
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MC79M15CDTRKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC79M00 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 |
на замовлення 2158 шт: термін постачання 21-30 дні (днів) |
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MC79M15CTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.3V Output voltage: -15V Output current: 0.5A Case: TO220AB Mounting: THT Manufacturer series: MC79M00 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.508...0.61mm |
на замовлення 141 шт: термін постачання 21-30 дні (днів) |
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MC79M15BDTRKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC79M00 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 |
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| MC79M15BTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -15V Output current: 0.5A Case: TO220AB Mounting: THT Kind of package: tube Number of channels: 1 |
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| NHP220SFT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 50ns; SOD123F; reel,tape Mounting: SMD Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123F Reverse recovery time: 50ns Load current: 2A Max. off-state voltage: 200V |
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| NCV8760CDT333RKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; DPAK4; SMD Case: DPAK4 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Output current: 0.15A Number of channels: 1 Output voltage: 3.3V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear |
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| BAV70 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape |
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NVTR4503NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23 Polarisation: unipolar Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Gate charge: 7nC On-state resistance: 0.14Ω Power dissipation: 0.73W Drain current: 1.5A Gate-source voltage: ±20V Drain-source voltage: 30V |
на замовлення 147 шт: термін постачання 21-30 дні (днів) |
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NUD4700SNT1G | ONSEMI |
Category: LED driversDescription: IC: driver; current shunt; POWERMITE; 1VDC; 1.56W; 1.3A Type of integrated circuit: driver Kind of integrated circuit: current shunt Case: POWERMITE Mounting: SMD Operating temperature: -40...150°C Operating voltage: 1V DC Power dissipation: 1.56W Operating current: 1.3A |
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| MC1496BDR2G | ONSEMI |
Category: RTV - audio integrated circuitsDescription: IC: modulator/demodulator Type of integrated circuit: modulator/demodulator |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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NCP114BSN330T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD Mounting: SMD Type of integrated circuit: voltage regulator Kind of package: reel; tape Operating temperature: -40...85°C Output current: 0.225A Voltage drop: 0.135V Number of channels: 1 Tolerance: ±2% Output voltage: 3.3V Input voltage: 1.7...5.5V Kind of voltage regulator: fixed; LDO; linear Case: TSSOP5 Manufacturer series: NCP114 |
на замовлення 1370 шт: термін постачання 21-30 дні (днів) |
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FCP16N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 167W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 48A |
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FCPF16N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 37.9W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 48A |
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В кошику од. на суму грн. | ||||||||||||||||
| MCT2ESR2VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Case: PDIP6 Max. off-state voltage: 6V Number of pins: 6 Collector-emitter voltage: 30V |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| NVMFS6H852NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 200A Power dissipation: 27W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13nC |
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В кошику од. на суму грн. | |||||||||||||||||
| NVMFS6H852NWFT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 200A Power dissipation: 27W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 14.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13nC |
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В кошику од. на суму грн. | |||||||||||||||||
| FDMD8280 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 80V; 40A; Idm: 160A; 38W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 160A Power dissipation: 38W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 44nC |
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В кошику од. на суму грн. | |||||||||||||||||
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MOC3063M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: zero voltage crossing driver Case: DIP6 Trigger current: 5mA Mounting: THT Output voltage: 600V Manufacturer series: MOC3063M |
на замовлення 634 шт: термін постачання 21-30 дні (днів) |
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FDC610PZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.9A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±25V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13nC Technology: PowerTrench® |
на замовлення 962 шт: термін постачання 21-30 дні (днів) |
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| NSTB60BDW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 22kΩ Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Case: SC70-6; SC88; SOT363 Mounting: SMD Collector current: 0.15A Power dissipation: 0.385W Current gain: 120...560 Collector-emitter voltage: 50V Quantity in set/package: 3000pcs. Base resistor: 22kΩ Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| NSVTB60BDW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Application: automotive industry Polarisation: bipolar Kind of transistor: BRT; complementary pair Case: SC70-6; SC88; SOT363 Mounting: SMD Collector current: 0.15A Power dissipation: 0.25W Collector-emitter voltage: 50V Kind of package: reel; tape |
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| NCP1246ALD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
товару немає в наявності |
В кошику од. на суму грн. |
| NVHL027N65S3F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 187.5A; 595W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 187.5A; 595W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Kind of channel: enhancement
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| NTH4L027N65S3F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhancement
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| NVMFS027N10MCLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 137A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 137A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 137A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 137A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFWS027N10MCLTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 119A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 119A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDS4480 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Gate charge: 41nC
On-state resistance: 21mΩ
Power dissipation: 2.5W
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Gate charge: 41nC
On-state resistance: 21mΩ
Power dissipation: 2.5W
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 2338 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 73.68 грн |
| 7+ | 60.46 грн |
| 21+ | 46.30 грн |
| 56+ | 43.75 грн |
| 500+ | 43.12 грн |
| MJW21195G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3
Polarisation: bipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: PNP
Power dissipation: 200W
Collector current: 16A
Collector-emitter voltage: 250V
Frequency: 4MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3
Polarisation: bipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: PNP
Power dissipation: 200W
Collector current: 16A
Collector-emitter voltage: 250V
Frequency: 4MHz
на замовлення 167 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 349.53 грн |
| 3+ | 283.99 грн |
| 5+ | 216.37 грн |
| 10+ | 215.58 грн |
| 12+ | 204.44 грн |
| 20+ | 201.26 грн |
| MMBT589LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.31/0.71W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.31/0.71W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1521 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.41 грн |
| 18+ | 22.43 грн |
| 50+ | 15.35 грн |
| 100+ | 12.89 грн |
| 117+ | 8.03 грн |
| 322+ | 7.56 грн |
| 1500+ | 7.48 грн |
| MUN5132DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 4.7kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 4.7kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| MC74LVX132DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14NB
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14NB
Supply voltage: 2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVX
Kind of integrated circuit: Schmitt trigger
Manufacturer series: LVX
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14NB
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14NB
Supply voltage: 2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVX
Kind of integrated circuit: Schmitt trigger
Manufacturer series: LVX
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| MC74LVX132DTG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...125°C
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of integrated circuit: Schmitt trigger
Manufacturer series: LVX
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...125°C
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of integrated circuit: Schmitt trigger
Manufacturer series: LVX
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| NLVVHC1G132DFT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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| NLVVHC1G132DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
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| 1N5339BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
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| D-STPR-GEVK |
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Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: AMIS30543
Kit contents: prototype board
Components: AMIS30543
Interface: I2C; I2C - Slave; SPI
Type of accessories for development kits: expansion board
development kits accessories features: Arduino Shield compatible; stepper motor driver
Kind of connector: pin strips; screw
Category: Development kits - others
Description: Expansion board; prototype board; Comp: AMIS30543
Kit contents: prototype board
Components: AMIS30543
Interface: I2C; I2C - Slave; SPI
Type of accessories for development kits: expansion board
development kits accessories features: Arduino Shield compatible; stepper motor driver
Kind of connector: pin strips; screw
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| FCH070N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 156A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 156A
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| FCH170N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
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| FCP170N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
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| FDB0170N607L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1620A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1620A
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| NTJD1155LT1G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC88
On-state resistance: 130/320mΩ
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Control voltage: 1.5...8V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC88
On-state resistance: 130/320mΩ
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Control voltage: 1.5...8V DC
на замовлення 647 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.55 грн |
| 17+ | 24.74 грн |
| 50+ | 20.36 грн |
| 65+ | 14.48 грн |
| 178+ | 13.68 грн |
| SZMMBZ20VALT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 1.4A
Number of channels: 2
Type of diode: TVS array
Tolerance: ±5%
Max. off-state voltage: 17V
Breakdown voltage: 20V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 1.4A
Number of channels: 2
Type of diode: TVS array
Tolerance: ±5%
Max. off-state voltage: 17V
Breakdown voltage: 20V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Application: automotive industry
на замовлення 5500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.57 грн |
| 73+ | 5.49 грн |
| 83+ | 4.80 грн |
| 106+ | 3.76 грн |
| 500+ | 2.58 грн |
| 1000+ | 2.06 грн |
| 3000+ | 1.93 грн |
| NTF3055L108T1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Power dissipation: 1.3W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT223
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.12Ω
Drain current: 1.4A
Pulsed drain current: 9A
Gate-source voltage: ±15V
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Power dissipation: 1.3W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT223
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.12Ω
Drain current: 1.4A
Pulsed drain current: 9A
Gate-source voltage: ±15V
Drain-source voltage: 60V
Kind of channel: enhancement
на замовлення 1301 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.98 грн |
| 35+ | 27.29 грн |
| 94+ | 25.85 грн |
| 500+ | 24.98 грн |
| 2N6292G | ![]() |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Collector current: 7A
Collector-emitter voltage: 80V
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Collector current: 7A
Collector-emitter voltage: 80V
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| SS34 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W
Mounting: SMD
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Kind of package: reel; tape
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W
Mounting: SMD
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Kind of package: reel; tape
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
на замовлення 3160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 39.41 грн |
| 15+ | 28.00 грн |
| 50+ | 20.92 грн |
| 100+ | 18.46 грн |
| 250+ | 17.58 грн |
| LM393N |
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Виробник: ONSEMI
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 3...32V
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Input offset current: 150nA
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 3...32V
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Input offset current: 150nA
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| NSR10F40NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: 0502
Mounting: SMD
Max. forward voltage: 0.49V
Load current: 1A
Max. forward impulse current: 18A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: 0502
Mounting: SMD
Max. forward voltage: 0.49V
Load current: 1A
Max. forward impulse current: 18A
Max. off-state voltage: 40V
на замовлення 4500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.27 грн |
| 21+ | 19.33 грн |
| 25+ | 16.78 грн |
| 91+ | 10.42 грн |
| 249+ | 9.86 грн |
| 1000+ | 9.71 грн |
| 2000+ | 9.47 грн |
| NSR10F20NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 20V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: 0502
Mounting: SMD
Max. forward voltage: 0.45V
Load current: 1A
Max. forward impulse current: 18A
Max. off-state voltage: 20V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 20V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: 0502
Mounting: SMD
Max. forward voltage: 0.45V
Load current: 1A
Max. forward impulse current: 18A
Max. off-state voltage: 20V
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| NSR1030QMUTWG |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Kind of package: reel; tape
Features of semiconductor devices: Schottky
Case: uDFN4
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 12A
Max. off-state voltage: 30V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Kind of package: reel; tape
Features of semiconductor devices: Schottky
Case: uDFN4
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 12A
Max. off-state voltage: 30V
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| NSR10F30NXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 30V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: 0502
Mounting: SMD
Max. forward voltage: 0.47V
Load current: 1A
Max. forward impulse current: 18A
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 30V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: 0502
Mounting: SMD
Max. forward voltage: 0.47V
Load current: 1A
Max. forward impulse current: 18A
Max. off-state voltage: 30V
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| BVSS84LT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.225W
On-state resistance: 10Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -0.13A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.225W
On-state resistance: 10Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: -50V
Drain current: -0.13A
на замовлення 3151 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.99 грн |
| 25+ | 16.55 грн |
| 50+ | 11.61 грн |
| 100+ | 9.94 грн |
| 152+ | 6.13 грн |
| 419+ | 5.81 грн |
| 3000+ | 5.73 грн |
| SZNUP3105LT1G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 35.6V; bidirectional; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 32V
Breakdown voltage: 35.6V
Application: automotive industry
Semiconductor structure: bidirectional
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 35.6V; bidirectional; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 32V
Breakdown voltage: 35.6V
Application: automotive industry
Semiconductor structure: bidirectional
Type of diode: TVS
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.70 грн |
| 19+ | 21.96 грн |
| 20+ | 20.60 грн |
| 25+ | 18.85 грн |
| 69+ | 13.52 грн |
| 190+ | 12.81 грн |
| MM5Z12VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
на замовлення 5995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 11.99 грн |
| 55+ | 7.24 грн |
| 92+ | 4.34 грн |
| 113+ | 3.52 грн |
| 452+ | 2.08 грн |
| 1241+ | 1.96 грн |
| 3000+ | 1.89 грн |
| SZMM5Z12VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| MARSZMM5Z12VT1G |
на замовлення 192000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.66 грн |
| SZMM5Z3V3T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| MM5Z4717T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxT1G
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| SZMM5Z4717T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxT1G
Application: automotive industry
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| SZMM5Z5V1T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| MMBTA14 |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
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| MC79M15CDTRKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
на замовлення 2158 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.55 грн |
| 20+ | 20.76 грн |
| 25+ | 18.85 грн |
| 100+ | 16.39 грн |
| 250+ | 15.91 грн |
| MC79M15CTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
на замовлення 141 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.12 грн |
| 18+ | 23.31 грн |
| 25+ | 21.16 грн |
| 50+ | 20.13 грн |
| MC79M15BDTRKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
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| MC79M15BTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
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| NHP220SFT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 50ns; SOD123F; reel,tape
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 50ns; SOD123F; reel,tape
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 200V
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| NCV8760CDT333RKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; DPAK4; SMD
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; DPAK4; SMD
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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| BAV70 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
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| NVTR4503NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Gate charge: 7nC
On-state resistance: 0.14Ω
Power dissipation: 0.73W
Drain current: 1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Gate charge: 7nC
On-state resistance: 0.14Ω
Power dissipation: 0.73W
Drain current: 1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 147 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.27 грн |
| 39+ | 10.34 грн |
| 43+ | 9.47 грн |
| 50+ | 8.03 грн |
| 100+ | 7.56 грн |
| NUD4700SNT1G |
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Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; current shunt; POWERMITE; 1VDC; 1.56W; 1.3A
Type of integrated circuit: driver
Kind of integrated circuit: current shunt
Case: POWERMITE
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 1V DC
Power dissipation: 1.56W
Operating current: 1.3A
Category: LED drivers
Description: IC: driver; current shunt; POWERMITE; 1VDC; 1.56W; 1.3A
Type of integrated circuit: driver
Kind of integrated circuit: current shunt
Case: POWERMITE
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 1V DC
Power dissipation: 1.56W
Operating current: 1.3A
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| MC1496BDR2G |
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Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: modulator/demodulator
Type of integrated circuit: modulator/demodulator
Category: RTV - audio integrated circuits
Description: IC: modulator/demodulator
Type of integrated circuit: modulator/demodulator
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 12.34 грн |
| NCP114BSN330T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 0.225A
Voltage drop: 0.135V
Number of channels: 1
Tolerance: ±2%
Output voltage: 3.3V
Input voltage: 1.7...5.5V
Kind of voltage regulator: fixed; LDO; linear
Case: TSSOP5
Manufacturer series: NCP114
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 225mA; TSSOP5; SMD
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 0.225A
Voltage drop: 0.135V
Number of channels: 1
Tolerance: ±2%
Output voltage: 3.3V
Input voltage: 1.7...5.5V
Kind of voltage regulator: fixed; LDO; linear
Case: TSSOP5
Manufacturer series: NCP114
на замовлення 1370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 11.99 грн |
| 44+ | 9.07 грн |
| 50+ | 7.95 грн |
| 60+ | 6.68 грн |
| 68+ | 5.89 грн |
| 100+ | 5.33 грн |
| 250+ | 5.25 грн |
| 472+ | 5.17 грн |
| FCP16N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
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| FCPF16N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
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| MCT2ESR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: PDIP6
Max. off-state voltage: 6V
Number of pins: 6
Collector-emitter voltage: 30V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: PDIP6
Max. off-state voltage: 6V
Number of pins: 6
Collector-emitter voltage: 30V
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 195+ | 33.58 грн |
| 950+ | 26.89 грн |
| NVMFS6H852NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
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| NVMFS6H852NWFT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 27W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 27W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 14.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
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| FDMD8280 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 40A; Idm: 160A; 38W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 38W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 44nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 40A; Idm: 160A; 38W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 38W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 44nC
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| MOC3063M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Output voltage: 600V
Manufacturer series: MOC3063M
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Output voltage: 600V
Manufacturer series: MOC3063M
на замовлення 634 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.12 грн |
| 50+ | 31.34 грн |
| 100+ | 30.31 грн |
| FDC610PZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Technology: PowerTrench®
на замовлення 962 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.98 грн |
| 14+ | 28.80 грн |
| 57+ | 16.55 грн |
| 155+ | 15.67 грн |
| 500+ | 15.43 грн |
| NSTB60BDW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 22kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.385W
Current gain: 120...560
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 22kΩ
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 22kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.385W
Current gain: 120...560
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 22kΩ
Kind of package: reel; tape
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| NSVTB60BDW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Kind of package: reel; tape
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| NCP1246ALD065R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
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