| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NCP1239ID65R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -0.5...0.5A Frequency: 60...70kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.8...25.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP1239KD65R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -0.5...0.5A Frequency: 60...70kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.8...25.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP1239MD65R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback; 8.8÷32VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -0.5...0.5A Frequency: 60...70kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.8...32V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP1239QD65R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -0.5...0.5A Frequency: 60...70kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.8...25.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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UJ3C065080K3S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 23A Pulsed drain current: 65A Power dissipation: 190W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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UF3C065030K3S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A Mounting: THT Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Gate charge: 51nC On-state resistance: 27mΩ Drain current: 62A Gate-source voltage: ±25V Pulsed drain current: 230A Power dissipation: 441W Drain-source voltage: 650V Case: TO247-3 Kind of transistor: cascode Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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UJ3C065080T3S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A Mounting: THT Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Gate charge: 51nC On-state resistance: 80mΩ Drain current: 23A Gate-source voltage: ±25V Pulsed drain current: 65A Power dissipation: 190W Drain-source voltage: 650V Case: TO220-3 Kind of transistor: cascode Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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UF3C065080K4S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A Mounting: THT Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Gate charge: 43nC On-state resistance: 80mΩ Drain current: 23A Gate-source voltage: ±25V Pulsed drain current: 65A Power dissipation: 190W Drain-source voltage: 650V Case: TO247-4 Kind of transistor: cascode Version: ESD Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NRVBD650CTT4G-VF01 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 50V; 3Ax2; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 50V Load current: 3A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.9V Max. load current: 6A Max. forward impulse current: 75A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SS34 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W Mounting: SMD Power dissipation: 2.27W Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.5V |
на замовлення 2688 шт: термін постачання 21-30 дні (днів) |
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| NVTYS003N04CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 498A; 34W; LFPAK33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 106A Pulsed drain current: 498A Power dissipation: 34W Case: LFPAK33 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTYS003N04CTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 99A; Idm: 465A; 34W; LFPAK33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 99A Pulsed drain current: 465A Power dissipation: 34W Case: LFPAK33 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTFWS003N04CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 103A Pulsed drain current: 484A Power dissipation: 22W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TL431AIDR2G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSR201MXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Capacitance: 0.15pF Load current: 50mA Max. forward voltage: 0.32V Max. off-state voltage: 2V Case: X2DFN2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSR2030QMUTWG | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 30V; If: 2A; Ifsm: 12.5A Kind of package: reel; tape Features of semiconductor devices: Schottky Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 2A Max. forward voltage: 0.65V Max. off-state voltage: 30V Max. forward impulse current: 12.5A Case: uDFN4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SS24 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape; 1.3W Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.3W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SS24 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape; 1.3W Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.3W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DTC114YET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DTC114TET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Current gain: 160...350 Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTGS3136PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -20A; 700mW; TSOP6 Polarisation: unipolar Kind of package: reel; tape Type of transistor: P-MOSFET Case: TSOP6 Mounting: SMD Drain-source voltage: -20V Pulsed drain current: -20A Drain current: -3.6A Gate charge: 18nC On-state resistance: 32mΩ Kind of channel: enhancement Power dissipation: 0.7W Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMSZ5225BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 3504 шт: термін постачання 21-30 дні (днів) |
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| SZMMSZ5225BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MURS320T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 0.89V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 0.89V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 1608 шт: термін постачання 21-30 дні (днів) |
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| MURS340T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 3A; 75ns; SMC; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 3A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.25V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MURS220T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 950mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.95V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MURS140T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.25V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MURS110T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.875V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MURS105T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.875V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NCP81071ADR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCP81071AMNTXG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: WDFN8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP81071AZR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: MSOP8EP Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NCP81071BDR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: non-inverting Kind of package: reel; tape Protection: undervoltage UVP Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCP81071BMNTXG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: WDFN8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP81071BZR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: MSOP8EP Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NCP81071CDR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting; non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCP81071CZR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: MSOP8EP Output current: -5...5A Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 15ns Pulse fall time: 15ns Kind of output: inverting; non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1SMA5935BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 27V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 4039 шт: термін постачання 21-30 дні (днів) |
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1SMA5920BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 6.2V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 4750 шт: термін постачання 21-30 дні (днів) |
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1SMA5917BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 4.7V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 4500 шт: термін постачання 21-30 дні (днів) |
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1SMA5922BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 7.5V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 2895 шт: термін постачання 21-30 дні (днів) |
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1SMA5930BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 4190 шт: термін постачання 21-30 дні (днів) |
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1SMA5916BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 4.3V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 734 шт: термін постачання 21-30 дні (днів) |
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1SMA5925BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 10V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 2696 шт: термін постачання 21-30 дні (днів) |
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1SMA5924BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 9.1V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 3444 шт: термін постачання 21-30 дні (днів) |
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1SMA5923BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 8.2V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 4990 шт: термін постачання 21-30 дні (днів) |
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1SMA5937BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 33V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 3739 шт: термін постачання 21-30 дні (днів) |
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1SMA5933BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 22V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 161 шт: термін постачання 21-30 дні (днів) |
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1SMA5938BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 36V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
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В кошику од. на суму грн. | ||||||||||||||||
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1SMA5915BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 3.9V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SMA5928BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 13V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SMA5942BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 51V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 51V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SMA5943BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 56V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMBJ30A | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 35V Max. forward impulse current: 100A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCD3400N80Z | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Gate charge: 9.6nC Drain current: 1.2A On-state resistance: 3.4Ω Pulsed drain current: 4A Power dissipation: 32W Gate-source voltage: ±20V Drain-source voltage: 800V Case: DPAK Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCP5623BMUTBG | ONSEMI |
Category: LED drivers Description: IC: driver; LED driver; I2C; LLGA12; 90mA; 4.4÷5.7V; Ch: 3; PWM Mounting: SMD Supply voltage: 2.7...5.5V DC Operating temperature: -40...85°C Number of channels: 3 Application: for RGB power LED applications Kind of integrated circuit: LED driver Case: LLGA12 Integrated circuit features: PWM Output current: 90mA Output voltage: 4.4...5.7V Type of integrated circuit: driver Interface: I2C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SURA8215T3G-VF01 | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape Mounting: SMD Type of diode: rectifying Semiconductor structure: single diode Case: SMA Reverse recovery time: 35ns Max. forward voltage: 0.95V Load current: 2A Max. off-state voltage: 150V Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NRVBA340NT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape Case: SMA Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.45V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Application: automotive industry Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC14093BDTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Kind of gate: NAND Number of channels: quad; 4 Kind of package: reel; tape Case: TSSOP14 Kind of input: with Schmitt trigger Operating temperature: -55...125°C Delay time: 100ns Number of inputs: 2 Supply voltage: 3...18V DC Technology: CMOS Type of integrated circuit: digital Mounting: SMD Family: HEF4000B |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MARMC14093BDR2G | ONSEMI |
Category: Unclassified Description: MARMC14093BDR2G |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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| NCP1239ID65R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
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| NCP1239KD65R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
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| NCP1239MD65R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback; 8.8÷32VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...32V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback; 8.8÷32VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...32V DC
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| NCP1239QD65R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
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| UJ3C065080K3S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 65A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Version: ESD
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| UF3C065030K3S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Mounting: THT
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 27mΩ
Drain current: 62A
Gate-source voltage: ±25V
Pulsed drain current: 230A
Power dissipation: 441W
Drain-source voltage: 650V
Case: TO247-3
Kind of transistor: cascode
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Mounting: THT
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 27mΩ
Drain current: 62A
Gate-source voltage: ±25V
Pulsed drain current: 230A
Power dissipation: 441W
Drain-source voltage: 650V
Case: TO247-3
Kind of transistor: cascode
Version: ESD
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| UJ3C065080T3S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Mounting: THT
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Pulsed drain current: 65A
Power dissipation: 190W
Drain-source voltage: 650V
Case: TO220-3
Kind of transistor: cascode
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Mounting: THT
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Pulsed drain current: 65A
Power dissipation: 190W
Drain-source voltage: 650V
Case: TO220-3
Kind of transistor: cascode
Version: ESD
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| UF3C065080K4S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Mounting: THT
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Pulsed drain current: 65A
Power dissipation: 190W
Drain-source voltage: 650V
Case: TO247-4
Kind of transistor: cascode
Version: ESD
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Mounting: THT
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Pulsed drain current: 65A
Power dissipation: 190W
Drain-source voltage: 650V
Case: TO247-4
Kind of transistor: cascode
Version: ESD
Features of semiconductor devices: Kelvin terminal
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| NRVBD650CTT4G-VF01 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 50V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 50V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
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| SS34 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W
Mounting: SMD
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W
Mounting: SMD
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.5V
на замовлення 2688 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 39.50 грн |
| 15+ | 28.07 грн |
| 50+ | 20.97 грн |
| 100+ | 18.50 грн |
| 250+ | 17.62 грн |
| NVTYS003N04CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 498A; 34W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 106A
Pulsed drain current: 498A
Power dissipation: 34W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 498A; 34W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 106A
Pulsed drain current: 498A
Power dissipation: 34W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTYS003N04CTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 99A; Idm: 465A; 34W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 99A
Pulsed drain current: 465A
Power dissipation: 34W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 99A; Idm: 465A; 34W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 99A
Pulsed drain current: 465A
Power dissipation: 34W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFWS003N04CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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| TL431AIDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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| NSR201MXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.15pF
Load current: 50mA
Max. forward voltage: 0.32V
Max. off-state voltage: 2V
Case: X2DFN2
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.15pF
Load current: 50mA
Max. forward voltage: 0.32V
Max. off-state voltage: 2V
Case: X2DFN2
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| NSR2030QMUTWG |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 2A; Ifsm: 12.5A
Kind of package: reel; tape
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 2A
Max. forward voltage: 0.65V
Max. off-state voltage: 30V
Max. forward impulse current: 12.5A
Case: uDFN4
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 2A; Ifsm: 12.5A
Kind of package: reel; tape
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 2A
Max. forward voltage: 0.65V
Max. off-state voltage: 30V
Max. forward impulse current: 12.5A
Case: uDFN4
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| SS24 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
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| SS24 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
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| DTC114YET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Power dissipation: 0.2W
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| DTC114TET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Current gain: 160...350
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Current gain: 160...350
Power dissipation: 0.2W
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| NTGS3136PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -20A; 700mW; TSOP6
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: P-MOSFET
Case: TSOP6
Mounting: SMD
Drain-source voltage: -20V
Pulsed drain current: -20A
Drain current: -3.6A
Gate charge: 18nC
On-state resistance: 32mΩ
Kind of channel: enhancement
Power dissipation: 0.7W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.6A; Idm: -20A; 700mW; TSOP6
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: P-MOSFET
Case: TSOP6
Mounting: SMD
Drain-source voltage: -20V
Pulsed drain current: -20A
Drain current: -3.6A
Gate charge: 18nC
On-state resistance: 32mΩ
Kind of channel: enhancement
Power dissipation: 0.7W
Gate-source voltage: ±8V
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| MMSZ5225BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 3504 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.87 грн |
| 95+ | 4.23 грн |
| 143+ | 2.79 грн |
| 171+ | 2.34 грн |
| 500+ | 1.60 грн |
| 1000+ | 1.43 грн |
| SZMMSZ5225BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| MURS320T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 0.89V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.89V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 0.89V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.89V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 1608 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.49 грн |
| 16+ | 25.99 грн |
| 17+ | 23.68 грн |
| 50+ | 19.22 грн |
| 100+ | 17.62 грн |
| 500+ | 14.59 грн |
| 1000+ | 13.48 грн |
| MURS340T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 75ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 75ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
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| MURS220T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
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| MURS140T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
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| MURS110T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.875V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.875V
Kind of package: reel; tape
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| MURS105T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.875V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.875V
Kind of package: reel; tape
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| NCP81071ADR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
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| NCP81071AMNTXG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
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| NCP81071AZR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting
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| NCP81071BDR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: non-inverting
Kind of package: reel; tape
Protection: undervoltage UVP
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: non-inverting
Kind of package: reel; tape
Protection: undervoltage UVP
Number of channels: 2
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| NCP81071BMNTXG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; WDFN8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: WDFN8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: non-inverting
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| NCP81071BZR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: non-inverting
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| NCP81071CDR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
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| NCP81071CZR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; MSOP8EP; -5÷5A; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: MSOP8EP
Output current: -5...5A
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Kind of output: inverting; non-inverting
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| 1SMA5935BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 27V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 27V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 4039 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.61 грн |
| 30+ | 13.48 грн |
| 50+ | 10.29 грн |
| 100+ | 9.17 грн |
| 250+ | 7.89 грн |
| 500+ | 7.02 грн |
| 1000+ | 6.30 грн |
| 3000+ | 5.82 грн |
| 1SMA5920BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.2V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.2V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 4750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.33 грн |
| 26+ | 15.63 грн |
| 50+ | 11.88 грн |
| 100+ | 10.53 грн |
| 250+ | 8.93 грн |
| 500+ | 7.97 грн |
| 1000+ | 7.10 грн |
| 3000+ | 6.30 грн |
| 1SMA5917BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 4.7V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 4.7V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 4500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.47 грн |
| 27+ | 14.99 грн |
| 50+ | 11.08 грн |
| 100+ | 9.73 грн |
| 250+ | 8.29 грн |
| 500+ | 7.34 грн |
| 1000+ | 6.78 грн |
| 1SMA5922BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 7.5V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 7.5V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 2895 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.47 грн |
| 24+ | 16.90 грн |
| 50+ | 12.44 грн |
| 100+ | 10.68 грн |
| 500+ | 7.50 грн |
| 1000+ | 6.46 грн |
| 2500+ | 6.30 грн |
| 1SMA5930BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 4190 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.45 грн |
| 51+ | 7.89 грн |
| 100+ | 6.70 грн |
| 250+ | 6.22 грн |
| 500+ | 5.90 грн |
| 1000+ | 5.50 грн |
| 2500+ | 5.02 грн |
| 1SMA5916BT3G | ![]() |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 4.3V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 4.3V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 734 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.33 грн |
| 26+ | 15.79 грн |
| 50+ | 11.72 грн |
| 100+ | 10.29 грн |
| 250+ | 8.77 грн |
| 500+ | 7.73 грн |
| 1SMA5925BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 10V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 10V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 2696 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.47 грн |
| 27+ | 15.07 грн |
| 50+ | 11.08 грн |
| 100+ | 9.73 грн |
| 200+ | 8.45 грн |
| 250+ | 8.13 грн |
| 500+ | 7.26 грн |
| 1SMA5924BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 9.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 9.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 3444 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.47 грн |
| 27+ | 14.99 грн |
| 33+ | 12.28 грн |
| 100+ | 9.01 грн |
| 250+ | 7.50 грн |
| 500+ | 7.42 грн |
| 1SMA5923BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 8.2V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 8.2V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 4990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.47 грн |
| 26+ | 15.79 грн |
| 29+ | 13.95 грн |
| 100+ | 9.25 грн |
| 250+ | 7.89 грн |
| 500+ | 7.02 грн |
| 1000+ | 6.14 грн |
| 3000+ | 5.18 грн |
| 1SMA5937BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 33V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 33V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 3739 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.47 грн |
| 24+ | 17.22 грн |
| 27+ | 15.31 грн |
| 50+ | 11.24 грн |
| 100+ | 9.73 грн |
| 250+ | 8.13 грн |
| 500+ | 7.26 грн |
| 1SMA5933BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 22V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 22V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 161 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.47 грн |
| 28+ | 14.67 грн |
| 50+ | 11.24 грн |
| 100+ | 10.13 грн |
| 1SMA5938BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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| 1SMA5915BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.9V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.9V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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| 1SMA5928BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 13V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 13V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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| 1SMA5942BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 51V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 51V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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| 1SMA5943BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 56V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 56V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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| SMBJ30A |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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| FCD3400N80Z |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 9.6nC
Drain current: 1.2A
On-state resistance: 3.4Ω
Pulsed drain current: 4A
Power dissipation: 32W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Case: DPAK
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 9.6nC
Drain current: 1.2A
On-state resistance: 3.4Ω
Pulsed drain current: 4A
Power dissipation: 32W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Case: DPAK
Polarisation: unipolar
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| NCP5623BMUTBG |
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; I2C; LLGA12; 90mA; 4.4÷5.7V; Ch: 3; PWM
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Operating temperature: -40...85°C
Number of channels: 3
Application: for RGB power LED applications
Kind of integrated circuit: LED driver
Case: LLGA12
Integrated circuit features: PWM
Output current: 90mA
Output voltage: 4.4...5.7V
Type of integrated circuit: driver
Interface: I2C
Category: LED drivers
Description: IC: driver; LED driver; I2C; LLGA12; 90mA; 4.4÷5.7V; Ch: 3; PWM
Mounting: SMD
Supply voltage: 2.7...5.5V DC
Operating temperature: -40...85°C
Number of channels: 3
Application: for RGB power LED applications
Kind of integrated circuit: LED driver
Case: LLGA12
Integrated circuit features: PWM
Output current: 90mA
Output voltage: 4.4...5.7V
Type of integrated circuit: driver
Interface: I2C
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| SURA8215T3G-VF01 |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Case: SMA
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 150V
Application: automotive industry
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Case: SMA
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 150V
Application: automotive industry
Kind of package: reel; tape
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| NRVBA340NT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.45V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.45V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Application: automotive industry
Semiconductor structure: single diode
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| MC14093BDTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Case: TSSOP14
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Case: TSSOP14
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Family: HEF4000B
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| MARMC14093BDR2G |
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 11.94 грн |














