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FGHL75T65MQDTL4 ONSEMI fghl75t65mqdtl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 375W; TO247-4
Mounting: THT
Case: TO247-4
Collector current: 80A
Gate-emitter voltage: ±20V
Power dissipation: 375W
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Gate charge: 149nC
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NVHL040N65S3HF ONSEMI nvhl040n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 157nC
On-state resistance: 40mΩ
Drain current: 65A
Gate-source voltage: ±30V
Power dissipation: 446W
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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NVHL040N65S3F ONSEMI nvhl040n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 153nC
On-state resistance: 40mΩ
Drain current: 65A
Gate-source voltage: ±30V
Power dissipation: 446W
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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UJ3C065080K3S UJ3C065080K3S ONSEMI UJ3C065080K3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Technology: SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Power dissipation: 190W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Kind of transistor: cascode
Polarisation: unipolar
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UJ3C065080T3S UJ3C065080T3S ONSEMI UJ3C065080T3S.pdf Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Technology: SiC
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Power dissipation: 190W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Kind of transistor: cascode
Polarisation: unipolar
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LM385BZ-2.5G LM385BZ-2.5G ONSEMI LM285_LM385B.PDF Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: bulk
Maximum output current: 20mA
Reference voltage: 2.5V
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MC33153DR2G MC33153DR2G ONSEMI MC33153.PDF Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: SO8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: reel; tape
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
на замовлення 2014 шт:
термін постачання 14-30 дні (днів)
3+151.31 грн
10+101.43 грн
25+93.12 грн
50+90.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MC33153PG MC33153PG ONSEMI MC33153.PDF description Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IGBT gate driver
Case: DIP8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: tube
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
на замовлення 140 шт:
термін постачання 14-30 дні (днів)
6+84.16 грн
10+59.86 грн
25+55.70 грн
50+54.04 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
P6KE100CA P6KE100CA ONSEMI P6KE100CA.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 4.4A; bidirectional; DO15; 600W
Type of diode: TVS
Breakdown voltage: 100V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85.5V
Max. forward impulse current: 4.4A
Leakage current: 5µA
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2SC3646S-TD-E 2SC3646S-TD-E ONSEMI 2sa1416jp-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Mounting: SMD
Case: SOT89
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Polarisation: bipolar
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
8+58.20 грн
13+33.42 грн
100+22.20 грн
250+19.12 грн
500+17.21 грн
1000+16.63 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MUN5233DW1T1G MUN5233DW1T1G ONSEMI dtc143zd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Current gain: 80...200
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: NPN x2
на замовлення 1945 шт:
термін постачання 14-30 дні (днів)
28+16.12 грн
36+11.64 грн
41+10.14 грн
100+6.03 грн
500+4.22 грн
1000+3.63 грн
1500+3.33 грн
Мінімальне замовлення: 28
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6N138M 6N138M ONSEMI 6N138M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
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NRVBSS16HE ONSEMI ss13he-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
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FNB41060
+1
 		FNB41060 ONSEMI fnb41060-d.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Power dissipation: 32W
Case: SPMAA-A26
Mounting: THT
Technology: Motion SPM® 45
Type of integrated circuit: driver
Number of channels: 6
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 10A
Operating voltage: 13.5...16.5/0...400V DC
Collector-emitter voltage: 600V
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
1+1035.92 грн
3+869.64 грн
5+806.45 грн
12+750.75 грн
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NSBC143ZF3T5G ONSEMI dtc143z-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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DTC143ZM3T5G ONSEMI dtc143z-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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NSVDTC143ZM3T5G ONSEMI dtc143z-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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MC74HCT86ADR2G MC74HCT86ADR2G ONSEMI MC74HCT86A-D.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
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MC74HCT86ADTR2G MC74HCT86ADTR2G ONSEMI MC74HCT86A-D.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
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NJVMJD112T4G ONSEMI mjd112-d.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MMSD4148 ONSEMI MMSD4148.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Capacitance: 4pF
Features of semiconductor devices: fast switching
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NVTFWS005N08XLTAG ONSEMI nvtfws005n08xl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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NVTFWS005N08XLTAG ONSEMI nvtfws005n08xl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 900 шт:
термін постачання 14-30 дні (днів)
900+52.83 грн
Мінімальне замовлення: 900
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FNC42060F2 ONSEMI fnc42060f2-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; 20A; Uoper: 600V; Uinsul: 2kV; 50W; Uce: 600V
Type of integrated circuit: driver
Output current: 20A
DC supply current: 2.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 50W
Collector-emitter voltage: 600V
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NCS20034DR2G ONSEMI ncs2003-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV
Kind of package: reel; tape
Mounting: SMT
Integrated circuit features: rail-to-rail output
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
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NCV20034DR2G ONSEMI ncs2003-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV
Kind of package: reel; tape
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail output
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
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MC14518BDWR2G ONSEMI MC14518B-D.pdf Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: reel; tape
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
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MC14518BDWG ONSEMI MC14518B-D.pdf Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: tube
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
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LM2576D2T-ADJG ONSEMI lm2576-d.pdf description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
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LM2576D2T-ADJR4G ONSEMI lm2576-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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MC33375ST-3.3T3G ONSEMI mc33375-d.pdf description Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33375ST-1.8T3G ONSEMI mc33375-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MOC3063M MOC3063M ONSEMI MOC3063M-ONS.pdf Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3063M
Output voltage: 600V
на замовлення 305 шт:
термін постачання 14-30 дні (днів)
7+65.36 грн
12+34.67 грн
25+31.18 грн
50+28.85 грн
100+26.69 грн
200+25.19 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NL27WZ00USG NL27WZ00USG ONSEMI nl27wz00-d.pdf Category: Interfaces others - integrated circuits
Description: IC: digital; CMOS; SMD; US8; Ch: 2; IN: 2; 1uA; 1.65÷5.5V; 2.4ns; AUC
Type of integrated circuit: digital
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 2.4ns
Quiescent current: 1µA
Number of outputs: 1
Number of channels: 2
Supply voltage: 1.65...5.5V
Number of inputs: 2
Family: AUC
Case: US8
Kind of gate: NAND
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
39+11.64 грн
50+8.40 грн
100+7.15 грн
250+6.32 грн
500+6.07 грн
Мінімальне замовлення: 39
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KSP92BU KSP92BU ONSEMI ksp92-d.pdf FAIRS18882-1.pdf?t.download=true&u=5oefqw Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 7761 шт:
термін постачання 14-30 дні (днів)
36+12.53 грн
59+7.07 грн
100+5.00 грн
500+4.18 грн
Мінімальне замовлення: 36
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KSP92TA KSP92TA ONSEMI ksp92-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
на замовлення 1995 шт:
термін постачання 14-30 дні (днів)
25+17.91 грн
42+9.98 грн
100+6.57 грн
500+5.04 грн
1000+4.53 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
NST3904DP6T5G ONSEMI nst3904dp6-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.42W; SOT963
Polarisation: bipolar
Case: SOT963
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.42W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 200MHz
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NST3904DXV6T1G ONSEMI nst3904dxv6t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
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NSVJ6904DSB6T1G ONSEMI nsvj6904dsb6-d.pdf Category: Multi channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Polarisation: unipolar
Semiconductor structure: common source
Case: CPH6
Type of transistor: N-JFET x2
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: -25V
Gate current: 10mA
Drain current: 20mA
Power dissipation: 0.7W
Drain-source voltage: 25V
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NSVT3904DXV6T1G ONSEMI nst3904dxv6t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Application: automotive industry
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
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ESD5Z2.5T1G ESD5Z2.5T1G ONSEMI ESD5Zx-DTE.PDF Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 11A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.12kW
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 6µA
Kind of package: reel; tape
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NTBG028N170M1 ONSEMI ntbg028n170m1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 222nC
On-state resistance: 57mΩ
Power dissipation: 214W
Drain current: 53A
Pulsed drain current: 195A
Drain-source voltage: 1.7kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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NVBG020N120SC1 ONSEMI nvbg020n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 0.22µC
On-state resistance: 50mΩ
Power dissipation: 3.7W
Drain current: 8.6A
Pulsed drain current: 392A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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NTBG020N090SC1 ONSEMI ntbg020n090sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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NTBG020N120SC1 ONSEMI ntbg020n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 0.22µC
On-state resistance: 50mΩ
Power dissipation: 3.7W
Drain current: 8.6A
Pulsed drain current: 392A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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NTBG022N120M3S ONSEMI ntbg022n120m3s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 142nC
On-state resistance: 44mΩ
Power dissipation: 220W
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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NVBG020N090SC1 ONSEMI nvbg020n090sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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NVBG022N120M3S ONSEMI nvbg022n120m3s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 142nC
On-state resistance: 44mΩ
Power dissipation: 220W
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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1N5362BG 1N5362BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
на замовлення 652 шт:
термін постачання 14-30 дні (днів)
25+17.91 грн
29+14.80 грн
31+13.72 грн
34+12.39 грн
100+10.81 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
1N5368BG 1N5368BG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 47V
Kind of package: bulk
Case: CASE017AA
на замовлення 558 шт:
термін постачання 14-30 дні (днів)
20+22.38 грн
24+17.96 грн
26+16.13 грн
50+12.72 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
1N5250B 1N5250B ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 1N52xxB
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE017AG
Mounting: THT
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: 1N52xxB
на замовлення 4884 шт:
термін постачання 14-30 дні (днів)
63+7.16 грн
117+3.58 грн
157+2.66 грн
242+1.72 грн
500+1.28 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MC74HC10ADTR2G ONSEMI mc74hc10a-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; SMD; TSSOP14; -55÷125°C; 1uA; 16ns; HC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Delay time: 16ns
Quiescent current: 1µA
Number of outputs: 3
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MC14070BDG MC14070BDG ONSEMI MC14070B-D.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
16+28.65 грн
17+24.53 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
NVMFS6H848NLT1G ONSEMI nvmfs6h848nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS6H848NLWFT1G ONSEMI nvmfs6h848nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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ESD5Z5.0T5G ONSEMI esd5z2.5t1-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.174kW; 6.2V; 9.4A; unidirectional; SOD523; Ch: 1; 80pF
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Number of channels: 1
Capacitance: 80pF
Max. forward impulse current: 9.4A
Peak pulse power dissipation: 0.174kW
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SZESD5Z5.0T1G ONSEMI esd5z2.5t1-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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1N4937RLG 1N4937RLG ONSEMI 1N4933_7.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
на замовлення 2029 шт:
термін постачання 14-30 дні (днів)
42+10.74 грн
65+6.48 грн
76+5.52 грн
100+4.23 грн
250+3.56 грн
500+3.16 грн
Мінімальне замовлення: 42
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1N4937G 1N4937G ONSEMI 1N4933_7.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
на замовлення 588 шт:
термін постачання 14-30 дні (днів)
63+7.16 грн
72+5.82 грн
100+4.28 грн
500+3.32 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MC74VHC4052DR2G MC74VHC4052DR2G ONSEMI MC74VHC4051-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Family: VHC
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Kind of package: reel; tape
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FGHL75T65MQDTL4 fghl75t65mqdtl4-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 375W; TO247-4
Mounting: THT
Case: TO247-4
Collector current: 80A
Gate-emitter voltage: ±20V
Power dissipation: 375W
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Gate charge: 149nC
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NVHL040N65S3HF nvhl040n65s3hf-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 157nC
On-state resistance: 40mΩ
Drain current: 65A
Gate-source voltage: ±30V
Power dissipation: 446W
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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NVHL040N65S3F nvhl040n65s3f-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 153nC
On-state resistance: 40mΩ
Drain current: 65A
Gate-source voltage: ±30V
Power dissipation: 446W
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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UJ3C065080K3S UJ3C065080K3S.pdf
UJ3C065080K3S
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Technology: SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Power dissipation: 190W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Kind of transistor: cascode
Polarisation: unipolar
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UJ3C065080T3S UJ3C065080T3S.pdf
UJ3C065080T3S
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A
Technology: SiC
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 51nC
On-state resistance: 80mΩ
Drain current: 23A
Gate-source voltage: ±25V
Power dissipation: 190W
Pulsed drain current: 65A
Drain-source voltage: 650V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-JFET / N-MOSFET
Kind of transistor: cascode
Polarisation: unipolar
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LM385BZ-2.5G LM285_LM385B.PDF
LM385BZ-2.5G
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: bulk
Maximum output current: 20mA
Reference voltage: 2.5V
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MC33153DR2G MC33153.PDF
MC33153DR2G
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: SO8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: reel; tape
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
на замовлення 2014 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+151.31 грн
10+101.43 грн
25+93.12 грн
50+90.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MC33153PG description MC33153.PDF
MC33153PG
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; IGBT gate driver; DIP8; -2÷1A; 2÷13.9V; Ch: 1
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IGBT gate driver
Case: DIP8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: tube
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
на замовлення 140 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+84.16 грн
10+59.86 грн
25+55.70 грн
50+54.04 грн
Мінімальне замовлення: 6
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P6KE100CA P6KE100CA.pdf
P6KE100CA
Виробник: ONSEMI
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 4.4A; bidirectional; DO15; 600W
Type of diode: TVS
Breakdown voltage: 100V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85.5V
Max. forward impulse current: 4.4A
Leakage current: 5µA
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2SC3646S-TD-E 2sa1416jp-d.pdf
2SC3646S-TD-E
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Mounting: SMD
Case: SOT89
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Polarisation: bipolar
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+58.20 грн
13+33.42 грн
100+22.20 грн
250+19.12 грн
500+17.21 грн
1000+16.63 грн
Мінімальне замовлення: 8
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MUN5233DW1T1G dtc143zd-d.pdf
MUN5233DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 4.7kΩ
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Current gain: 80...200
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: NPN x2
на замовлення 1945 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.12 грн
36+11.64 грн
41+10.14 грн
100+6.03 грн
500+4.22 грн
1000+3.63 грн
1500+3.33 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
6N138M 6N138M.pdf
6N138M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
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NRVBSS16HE ss13he-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
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FNB41060 fnb41060-d.pdf
FNB41060
+1
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Power dissipation: 32W
Case: SPMAA-A26
Mounting: THT
Technology: Motion SPM® 45
Type of integrated circuit: driver
Number of channels: 6
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 10A
Operating voltage: 13.5...16.5/0...400V DC
Collector-emitter voltage: 600V
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1035.92 грн
3+869.64 грн
5+806.45 грн
12+750.75 грн
В кошику  од. на суму  грн.
NSBC143ZF3T5G dtc143z-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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DTC143ZM3T5G dtc143z-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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NSVDTC143ZM3T5G dtc143z-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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MC74HCT86ADR2G MC74HCT86A-D.pdf
MC74HCT86ADR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
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MC74HCT86ADTR2G MC74HCT86A-D.pdf
MC74HCT86ADTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
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NJVMJD112T4G mjd112-d.pdf
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MMSD4148 MMSD4148.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Capacitance: 4pF
Features of semiconductor devices: fast switching
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NVTFWS005N08XLTAG nvtfws005n08xl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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NVTFWS005N08XLTAG nvtfws005n08xl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 900 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
900+52.83 грн
Мінімальне замовлення: 900
В кошику  од. на суму  грн.
FNC42060F2 fnc42060f2-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; 20A; Uoper: 600V; Uinsul: 2kV; 50W; Uce: 600V
Type of integrated circuit: driver
Output current: 20A
DC supply current: 2.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 50W
Collector-emitter voltage: 600V
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NCS20034DR2G ncs2003-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV
Kind of package: reel; tape
Mounting: SMT
Integrated circuit features: rail-to-rail output
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
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NCV20034DR2G ncs2003-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 4; 1.7÷5.5VDC; SO14; 4mV
Kind of package: reel; tape
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail output
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Case: SO14
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
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MC14518BDWR2G MC14518B-D.pdf
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: reel; tape
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
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MC14518BDWG MC14518B-D.pdf
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: tube
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
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LM2576D2T-ADJG description lm2576-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
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LM2576D2T-ADJR4G lm2576-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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MC33375ST-3.3T3G description mc33375-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33375ST-1.8T3G mc33375-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MOC3063M MOC3063M-ONS.pdf
MOC3063M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3063M
Output voltage: 600V
на замовлення 305 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+65.36 грн
12+34.67 грн
25+31.18 грн
50+28.85 грн
100+26.69 грн
200+25.19 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NL27WZ00USG nl27wz00-d.pdf
NL27WZ00USG
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; CMOS; SMD; US8; Ch: 2; IN: 2; 1uA; 1.65÷5.5V; 2.4ns; AUC
Type of integrated circuit: digital
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 2.4ns
Quiescent current: 1µA
Number of outputs: 1
Number of channels: 2
Supply voltage: 1.65...5.5V
Number of inputs: 2
Family: AUC
Case: US8
Kind of gate: NAND
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.64 грн
50+8.40 грн
100+7.15 грн
250+6.32 грн
500+6.07 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
KSP92BU ksp92-d.pdf FAIRS18882-1.pdf?t.download=true&u=5oefqw
KSP92BU
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 7761 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.53 грн
59+7.07 грн
100+5.00 грн
500+4.18 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
KSP92TA ksp92-d.pdf
KSP92TA
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
на замовлення 1995 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+17.91 грн
42+9.98 грн
100+6.57 грн
500+5.04 грн
1000+4.53 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
NST3904DP6T5G nst3904dp6-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.42W; SOT963
Polarisation: bipolar
Case: SOT963
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.42W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 200MHz
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NST3904DXV6T1G nst3904dxv6t1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
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NSVJ6904DSB6T1G nsvj6904dsb6-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Polarisation: unipolar
Semiconductor structure: common source
Case: CPH6
Type of transistor: N-JFET x2
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: -25V
Gate current: 10mA
Drain current: 20mA
Power dissipation: 0.7W
Drain-source voltage: 25V
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NSVT3904DXV6T1G nst3904dxv6t1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Application: automotive industry
Polarisation: bipolar
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.357W
Collector current: 0.2A
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
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ESD5Z2.5T1G ESD5Zx-DTE.PDF
ESD5Z2.5T1G
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 11A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.12kW
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 6µA
Kind of package: reel; tape
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NTBG028N170M1 ntbg028n170m1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 53A; Idm: 195A; 214W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 222nC
On-state resistance: 57mΩ
Power dissipation: 214W
Drain current: 53A
Pulsed drain current: 195A
Drain-source voltage: 1.7kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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NVBG020N120SC1 nvbg020n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 0.22µC
On-state resistance: 50mΩ
Power dissipation: 3.7W
Drain current: 8.6A
Pulsed drain current: 392A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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NTBG020N090SC1 ntbg020n090sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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NTBG020N120SC1 ntbg020n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 0.22µC
On-state resistance: 50mΩ
Power dissipation: 3.7W
Drain current: 8.6A
Pulsed drain current: 392A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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NTBG022N120M3S ntbg022n120m3s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 142nC
On-state resistance: 44mΩ
Power dissipation: 220W
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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NVBG020N090SC1 nvbg020n090sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 200nC
On-state resistance: 27mΩ
Power dissipation: 3.7W
Drain current: 9.8A
Pulsed drain current: 448A
Drain-source voltage: 900V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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NVBG022N120M3S nvbg022n120m3s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 142nC
On-state resistance: 44mΩ
Power dissipation: 220W
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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1N5362BG 1N53xx.PDF
1N5362BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
на замовлення 652 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+17.91 грн
29+14.80 грн
31+13.72 грн
34+12.39 грн
100+10.81 грн
Мінімальне замовлення: 25
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1N5368BG description 1N53xx.PDF
1N5368BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 47V
Kind of package: bulk
Case: CASE017AA
на замовлення 558 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.38 грн
24+17.96 грн
26+16.13 грн
50+12.72 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
1N5250B 1N52xxB.PDF
1N5250B
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; bulk; CASE017AG; single diode; 1N52xxB
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE017AG
Mounting: THT
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 20V
Manufacturer series: 1N52xxB
на замовлення 4884 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.16 грн
117+3.58 грн
157+2.66 грн
242+1.72 грн
500+1.28 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MC74HC10ADTR2G mc74hc10a-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; SMD; TSSOP14; -55÷125°C; 1uA; 16ns; HC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Delay time: 16ns
Quiescent current: 1µA
Number of outputs: 3
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MC14070BDG MC14070B-D.pdf
MC14070BDG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+28.65 грн
17+24.53 грн
Мінімальне замовлення: 16
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NVMFS6H848NLT1G nvmfs6h848nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS6H848NLWFT1G nvmfs6h848nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59A
Pulsed drain current: 319A
Power dissipation: 37W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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ESD5Z5.0T5G esd5z2.5t1-d.pdf
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.174kW; 6.2V; 9.4A; unidirectional; SOD523; Ch: 1; 80pF
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Number of channels: 1
Capacitance: 80pF
Max. forward impulse current: 9.4A
Peak pulse power dissipation: 0.174kW
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SZESD5Z5.0T1G esd5z2.5t1-d.pdf
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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1N4937RLG 1N4933_7.PDF
1N4937RLG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
на замовлення 2029 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.74 грн
65+6.48 грн
76+5.52 грн
100+4.23 грн
250+3.56 грн
500+3.16 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
1N4937G 1N4933_7.PDF
1N4937G
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
на замовлення 588 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.16 грн
72+5.82 грн
100+4.28 грн
500+3.32 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MC74VHC4052DR2G MC74VHC4051-D.pdf
MC74VHC4052DR2G
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Family: VHC
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Kind of package: reel; tape
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