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NL17SZ00DFT2G-L22038 ONSEMI nl17sz00-d.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
3000+3.35 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
M74VHC1GT08DFT1G-L22038 ONSEMI mc74vhc1g08-d.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+3.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MC74HC1G04DFT1G-L22038 ONSEMI mc74hc1g04-d.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
3000+2.94 грн
Мінімальне замовлення: 3000
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HUF75639S3ST HUF75639S3ST ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E8EF86412D5EA&compId=HUF75639S3ST.pdf?ci_sign=b0b30c304ec406a4bae63adb3260faf049a9f397 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 756 шт:
термін постачання 21-30 дні (днів)
3+202.92 грн
10+138.28 грн
50+107.55 грн
100+101.08 грн
Мінімальне замовлення: 3
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HUF75639P3 HUF75639P3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E878CD29235EA&compId=HUF75639P3.pdf?ci_sign=7e9ce06467832523d29c425b382a9e3100f1f202 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
3+195.95 грн
10+107.55 грн
Мінімальне замовлення: 3
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HUF75639G3 ONSEMI huf75639g3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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HUF75639S3 ONSEMI huf75639g3-d.pdf HRISS01168-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO262AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO262AA
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhancement
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NC7SZ34UCX ONSEMI nc7sz34-d.pdf ONSM-S-A0003590664-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; WLCSP4; 10uA
Mounting: SMD
Type of integrated circuit: digital
Case: WLCSP4
Operating temperature: -40...85°C
Quiescent current: 10µA
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
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NCV21801SN2T1G ONSEMI ncs21801-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA
Operating temperature: -40...150°C
Mounting: SMT
Case: SOT23-5
Type of integrated circuit: operational amplifier
Integrated circuit features: precision
Kind of package: reel; tape
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Number of channels: single
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NCV21801SQ3T2G ONSEMI ncs21801-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMT
Case: SC70-5
Type of integrated circuit: operational amplifier
Integrated circuit features: precision; zero-drift
Kind of package: reel; tape
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Number of channels: single
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NCV21802DMR2G ONSEMI ncs21801-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; Micro8; 1.6÷5.5VDC,1.8÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMT
Case: Micro8
Type of integrated circuit: operational amplifier
Integrated circuit features: zero-drift
Kind of package: reel; tape
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Number of channels: dual
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MC100EP52DG MC100EP52DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EEED8A2DF694469&compId=MC100EP52DG.PDF?ci_sign=4aa41003093e3389c342e5f057d25ef1289a599b Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO8; OUT: ECL; tube
Mounting: SMD
Kind of package: tube
Case: SO8
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Kind of output: ECL
Trigger: positive-edge-triggered
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
1+674.06 грн
5+597.61 грн
25+536.96 грн
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MC100EP05DG MC100EP05DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EEEC96DE2B1A469&compId=MC100EP05DG.PDF?ci_sign=cbc4cbfc671ed87946b57ce79d0c0c3e51416e72 Category: Gates, inverters
Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; SO8; tube
Mounting: SMD
Kind of package: tube
Case: SO8
Type of integrated circuit: digital
Number of channels: single; 1
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Number of inputs: 4
Kind of gate: AND; multiple-function; NAND
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
1+579.14 грн
В кошику  од. на суму  грн.
MC100EP52DTG MC100EP52DTG ONSEMI mc10ep52-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; OUT: ECL; tube
Mounting: SMD
Kind of package: tube
Case: TSSOP8
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Kind of output: ECL
Trigger: positive-edge-triggered
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 3.3...5V DC
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
1+533.85 грн
10+494.10 грн
В кошику  од. на суму  грн.
NDP6060L NDP6060L ONSEMI pVersion=0046&contRep=ZT&docId=E20E0A4AA9E34EF1A303005056AB0C4F&compId=NDB6060L.pdf?ci_sign=ad6bbee0ff15f5d3e93e17aa5cc9c1bc50022c74 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 60nC
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
3+214.24 грн
10+178.72 грн
50+165.78 грн
Мінімальне замовлення: 3
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MBR1080G MBR1080G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EB2D97610C6469&compId=MBR10100G.PDF?ci_sign=8305eeba20bae50309cbee4af22988a5e815f9f7 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; Ufmax: 0.85V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.85V
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 80V
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
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FAN6605MX FAN6605MX ONSEMI fan6605-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 65kHz; SOP7; flyback; 0÷90%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Frequency: 65kHz
Case: SOP7
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Duty cycle factor: 0...90%
Kind of package: reel; tape
Operating voltage: 11...24V DC
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BD239CTU BD239CTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD93DB4214ABDF80D3&compId=BD239x.pdf?ci_sign=2b255cd84aa1d429c5df5a3b374a6dc10198953e Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
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2N6287 2N6287 ONSEMI 2N6286-2N6287-LDS-0309-MIL-PRF-19500-505.pdf 2N6284%2C%202N6287.pdf Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 160W
Case: TO3
Mounting: THT
Kind of package: in-tray
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FDD9409-F085 ONSEMI fdd9409_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
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FOD8342 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F4E6DA140C7&compId=FOD8342.pdf?ci_sign=bb8fcdbf407d51cc189d18de6b6fcdec095a9c77 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: SOP5
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD8342
Turn-on time: 38ns
Turn-off time: 24ns
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FOD8342R2 ONSEMI fod8342-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
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FOD8342TR2 ONSEMI fod8342-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
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FOD8342TR2V ONSEMI fod8342-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
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1N5386BG 1N5386BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 180V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 180V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
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1N5386BRLG 1N5386BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 180V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 180V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
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FDS5670 FDS5670 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9DE96E8BEA259&compId=FDS5670.pdf?ci_sign=4bf2c66031aeb831fd2322b7c6cbdab35e3da19f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2478 шт:
термін постачання 21-30 дні (днів)
3+161.98 грн
5+122.92 грн
10+109.17 грн
50+81.68 грн
100+76.02 грн
Мінімальне замовлення: 3
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FQS4901TF FQS4901TF ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781968E47C25D8259&compId=FQS4901.pdf?ci_sign=a8e4e4608676641153ccf58002efb0417932c879 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 400V; 0.45A; 2W; SO8
Mounting: SMD
Technology: QFET®
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.45A
Gate charge: 7.5nC
Power dissipation: 2W
On-state resistance: 4.2Ω
Gate-source voltage: ±25V
Case: SO8
Kind of package: reel; tape
Kind of channel: enhancement
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2N4403BU 2N4403BU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDABC9A68E070DD40C7&compId=2N4403.pdf?ci_sign=8dd87c78206681ad6380762a8b4484e2528541bb Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: TO92
Mounting: THT
Kind of package: bulk
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FGY60T120SQDN ONSEMI fgy60t120sqdn-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±25V
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Gate charge: 311nC
Power dissipation: 259W
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NTBG020N090SC1 ONSEMI ntbg020n090sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.8A
Pulsed drain current: 448A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVBG020N090SC1 ONSEMI nvbg020n090sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.8A
Pulsed drain current: 448A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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FSL106MR FSL106MR ONSEMI fsl106mr-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 500mA; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...105°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 18Ω
Duty cycle factor: 71...83%
Power: 8W
Application: SMPS
Operating voltage: 8...24V DC
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FSV20120V ONSEMI fsv20120v-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 120V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 120V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 270A
Kind of package: reel; tape
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FDP075N15A-F102 FDP075N15A-F102 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED780826848070A6259&compId=FDP075N15A-F102.pdf?ci_sign=9e1a841a590a184f17491d5da0fd011fb1b831c2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.1µC
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Drain current: 92A
Drain-source voltage: 150V
Power dissipation: 333W
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
2+251.68 грн
10+210.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SBCP56T1G SBCP56T1G ONSEMI bcp56t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
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FSV12150V ONSEMI fsv12150v-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 220A
Kind of package: reel; tape
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FSV10100V ONSEMI fsv10100v-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 180A
Kind of package: reel; tape
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FSV10150V ONSEMI fsv10150v-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Max. forward impulse current: 180A
Kind of package: reel; tape
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FGY100T65SCDT ONSEMI fgy100t65scdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
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1N4740A-T50A 1N4740A-T50A ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
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NCP3284AMNTXG ONSEMI ncp3284-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Output voltage: 0.8...5.5V
Number of channels: 1
Input voltage: 4.5...18V
Output current: 35A
Frequency: 0.5...1MHz
Topology: buck
Mounting: SMD
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NCP3284MNTXG ONSEMI ncp3284-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Output voltage: 0.8...5.5V
Number of channels: 1
Input voltage: 4.5...18V
Output current: 30A
Frequency: 0.5...1MHz
Topology: buck
Mounting: SMD
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NVMTS1D2N08H ONSEMI nvmts1d2n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 337A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 337A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D2N08H ONSEMI ntmts1d2n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D5N08H ONSEMI ntmts1d5n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D6N10MCTXG ONSEMI ntmts1d6n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D5N08H ONSEMI nvmts1d5n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 129W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.4mΩ
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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В кошику  од. на суму  грн.
NVMTS1D6N10MCTXG ONSEMI nvmts1d6n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NCP152MX280120TCG ONSEMI ncp152-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6
Mounting: SMD
Tolerance: ±2%
Operating temperature: -40...85°C
Manufacturer series: NCP152
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN6
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 2
Output voltage: 1.2V; 2.8V
Input voltage: 1.9...5.25V
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FDH333 FDH333 ONSEMI ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1.15V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 1A
Case: DO35
Power dissipation: 0.5W
Leakage current: 0.5µA
Max. forward voltage: 1.15V
Max. load current: 0.6A
Capacitance: 6pF
на замовлення 2714 шт:
термін постачання 21-30 дні (днів)
36+12.19 грн
54+7.52 грн
100+5.34 грн
250+4.64 грн
500+4.18 грн
1000+3.75 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
FDH333TR ONSEMI ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; reel,tape; Ifsm: 4A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
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FDMC86324 FDMC86324 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF5A2BDEE67E28&compId=FDMC86324.pdf?ci_sign=d8ca39e5aa8dc96b53f27e3ed61837eed76dd64a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: PQFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 40mΩ
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 80V
Kind of channel: enhancement
Mounting: SMD
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MURA120T3G MURA120T3G ONSEMI mura115t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 1724 шт:
термін постачання 21-30 дні (днів)
18+25.26 грн
25+16.58 грн
50+12.62 грн
100+11.24 грн
250+9.70 грн
500+8.73 грн
1000+8.09 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
MMSZ22T1G MMSZ22T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 13985 шт:
термін постачання 21-30 дні (днів)
63+6.97 грн
76+5.34 грн
85+4.77 грн
131+3.09 грн
163+2.48 грн
500+1.67 грн
1000+1.50 грн
1500+1.43 грн
3000+1.42 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BCP68T1G BCP68T1G ONSEMI bcp68t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
на замовлення 968 шт:
термін постачання 21-30 дні (днів)
12+37.45 грн
18+22.72 грн
25+18.76 грн
100+14.07 грн
500+10.43 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SBCP68T1G SBCP68T1G ONSEMI bcp68t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
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NSVBCP68T1G ONSEMI bcp68t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
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RURG3060-F085 RURG3060-F085 ONSEMI rurg3060_f085-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-2
Reverse recovery time: 80ns
Application: automotive industry
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
2+269.10 грн
3+228.05 грн
10+180.33 грн
30+176.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RURG3060 RURG3060 ONSEMI pVersion=0046&contRep=ZT&docId=E20E076F090AF2F1A303005056AB0C4F&compId=RURG3060.pdf?ci_sign=096424324fa4165118f1f0b0d48c400328ce5e8d Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 325A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-2
Reverse recovery time: 60ns
Max. load current: 70A
Max. forward voltage: 1.5V
Power dissipation: 125W
Features of semiconductor devices: ultrafast switching
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NL17SZ00DFT2G-L22038 nl17sz00-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+3.35 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
M74VHC1GT08DFT1G-L22038 mc74vhc1g08-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+3.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MC74HC1G04DFT1G-L22038 mc74hc1g04-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+2.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
HUF75639S3ST pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E8EF86412D5EA&compId=HUF75639S3ST.pdf?ci_sign=b0b30c304ec406a4bae63adb3260faf049a9f397
HUF75639S3ST
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 756 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+202.92 грн
10+138.28 грн
50+107.55 грн
100+101.08 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
HUF75639P3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E878CD29235EA&compId=HUF75639P3.pdf?ci_sign=7e9ce06467832523d29c425b382a9e3100f1f202
HUF75639P3
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+195.95 грн
10+107.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
HUF75639G3 huf75639g3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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HUF75639S3 huf75639g3-d.pdf HRISS01168-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO262AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO262AA
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhancement
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NC7SZ34UCX nc7sz34-d.pdf ONSM-S-A0003590664-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; WLCSP4; 10uA
Mounting: SMD
Type of integrated circuit: digital
Case: WLCSP4
Operating temperature: -40...85°C
Quiescent current: 10µA
Technology: CMOS
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
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NCV21801SN2T1G ncs21801-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SOT23-5; reel,tape; IB: 5nA
Operating temperature: -40...150°C
Mounting: SMT
Case: SOT23-5
Type of integrated circuit: operational amplifier
Integrated circuit features: precision
Kind of package: reel; tape
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Number of channels: single
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NCV21801SQ3T2G ncs21801-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.6÷5.5VDC,1.8÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMT
Case: SC70-5
Type of integrated circuit: operational amplifier
Integrated circuit features: precision; zero-drift
Kind of package: reel; tape
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Number of channels: single
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NCV21802DMR2G ncs21801-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; Micro8; 1.6÷5.5VDC,1.8÷5.5VDC
Operating temperature: -40...150°C
Mounting: SMT
Case: Micro8
Type of integrated circuit: operational amplifier
Integrated circuit features: zero-drift
Kind of package: reel; tape
Input offset current: 2.5nA
Input bias current: 5nA
Input offset voltage: 10µV
Slew rate: 0.7V/μs
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Bandwidth: 1.5MHz
Number of channels: dual
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MC100EP52DG pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EEED8A2DF694469&compId=MC100EP52DG.PDF?ci_sign=4aa41003093e3389c342e5f057d25ef1289a599b
MC100EP52DG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO8; OUT: ECL; tube
Mounting: SMD
Kind of package: tube
Case: SO8
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Kind of output: ECL
Trigger: positive-edge-triggered
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+674.06 грн
5+597.61 грн
25+536.96 грн
В кошику  од. на суму  грн.
MC100EP05DG pVersion=0046&contRep=ZT&docId=005056AB752F1EE58EEEC96DE2B1A469&compId=MC100EP05DG.PDF?ci_sign=cbc4cbfc671ed87946b57ce79d0c0c3e51416e72
MC100EP05DG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; SO8; tube
Mounting: SMD
Kind of package: tube
Case: SO8
Type of integrated circuit: digital
Number of channels: single; 1
Operating temperature: -40...85°C
Supply voltage: 3...5.5V DC
Number of inputs: 4
Kind of gate: AND; multiple-function; NAND
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+579.14 грн
В кошику  од. на суму  грн.
MC100EP52DTG mc10ep52-d.pdf
MC100EP52DTG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP8; OUT: ECL; tube
Mounting: SMD
Kind of package: tube
Case: TSSOP8
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Kind of output: ECL
Trigger: positive-edge-triggered
Number of channels: 1
Operating temperature: -40...85°C
Supply voltage: 3.3...5V DC
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+533.85 грн
10+494.10 грн
В кошику  од. на суму  грн.
NDP6060L pVersion=0046&contRep=ZT&docId=E20E0A4AA9E34EF1A303005056AB0C4F&compId=NDB6060L.pdf?ci_sign=ad6bbee0ff15f5d3e93e17aa5cc9c1bc50022c74
NDP6060L
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 60nC
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+214.24 грн
10+178.72 грн
50+165.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MBR1080G pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EB2D97610C6469&compId=MBR10100G.PDF?ci_sign=8305eeba20bae50309cbee4af22988a5e815f9f7
MBR1080G
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; Ufmax: 0.85V
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.85V
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 80V
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
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FAN6605MX fan6605-d.pdf
FAN6605MX
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 65kHz; SOP7; flyback; 0÷90%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Frequency: 65kHz
Case: SOP7
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Duty cycle factor: 0...90%
Kind of package: reel; tape
Operating voltage: 11...24V DC
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BD239CTU pVersion=0046&contRep=ZT&docId=005056AB281E1EDD93DB4214ABDF80D3&compId=BD239x.pdf?ci_sign=2b255cd84aa1d429c5df5a3b374a6dc10198953e
BD239CTU
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
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2N6287 2N6286-2N6287-LDS-0309-MIL-PRF-19500-505.pdf 2N6284%2C%202N6287.pdf
2N6287
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 160W
Case: TO3
Mounting: THT
Kind of package: in-tray
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FDD9409-F085 fdd9409_f085-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
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FOD8342 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F4E6DA140C7&compId=FOD8342.pdf?ci_sign=bb8fcdbf407d51cc189d18de6b6fcdec095a9c77
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: SOP5
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD8342
Turn-on time: 38ns
Turn-off time: 24ns
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FOD8342R2 fod8342-d.pdf
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
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FOD8342TR2 fod8342-d.pdf
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
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FOD8342TR2V fod8342-d.pdf
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
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1N5386BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5386BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 180V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 180V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
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1N5386BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5386BRLG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 180V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 180V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
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FDS5670 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9DE96E8BEA259&compId=FDS5670.pdf?ci_sign=4bf2c66031aeb831fd2322b7c6cbdab35e3da19f
FDS5670
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2478 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+161.98 грн
5+122.92 грн
10+109.17 грн
50+81.68 грн
100+76.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FQS4901TF pVersion=0046&contRep=ZT&docId=005056AB752F1ED781968E47C25D8259&compId=FQS4901.pdf?ci_sign=a8e4e4608676641153ccf58002efb0417932c879
FQS4901TF
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 400V; 0.45A; 2W; SO8
Mounting: SMD
Technology: QFET®
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.45A
Gate charge: 7.5nC
Power dissipation: 2W
On-state resistance: 4.2Ω
Gate-source voltage: ±25V
Case: SO8
Kind of package: reel; tape
Kind of channel: enhancement
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2N4403BU pVersion=0046&contRep=ZT&docId=005056AB90B41EDABC9A68E070DD40C7&compId=2N4403.pdf?ci_sign=8dd87c78206681ad6380762a8b4484e2528541bb
2N4403BU
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: TO92
Mounting: THT
Kind of package: bulk
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FGY60T120SQDN fgy60t120sqdn-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±25V
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Gate charge: 311nC
Power dissipation: 259W
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NTBG020N090SC1 ntbg020n090sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.8A
Pulsed drain current: 448A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVBG020N090SC1 nvbg020n090sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 9.8A; Idm: 448A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.8A
Pulsed drain current: 448A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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FSL106MR fsl106mr-d.pdf
FSL106MR
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 500mA; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...105°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 18Ω
Duty cycle factor: 71...83%
Power: 8W
Application: SMPS
Operating voltage: 8...24V DC
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FSV20120V fsv20120v-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 120V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 120V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 270A
Kind of package: reel; tape
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FDP075N15A-F102 pVersion=0046&contRep=ZT&docId=005056AB752F1ED780826848070A6259&compId=FDP075N15A-F102.pdf?ci_sign=9e1a841a590a184f17491d5da0fd011fb1b831c2
FDP075N15A-F102
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.1µC
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Drain current: 92A
Drain-source voltage: 150V
Power dissipation: 333W
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+251.68 грн
10+210.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SBCP56T1G bcp56t1-d.pdf
SBCP56T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
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FSV12150V fsv12150v-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 220A
Kind of package: reel; tape
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FSV10100V fsv10100v-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 180A
Kind of package: reel; tape
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FSV10150V fsv10150v-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Max. forward impulse current: 180A
Kind of package: reel; tape
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FGY100T65SCDT fgy100t65scdt-d.pdf
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
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1N4740A-T50A 1N47xxA.PDF
1N4740A-T50A
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
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NCP3284AMNTXG ncp3284-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Output voltage: 0.8...5.5V
Number of channels: 1
Input voltage: 4.5...18V
Output current: 35A
Frequency: 0.5...1MHz
Topology: buck
Mounting: SMD
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NCP3284MNTXG ncp3284-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Operating temperature: -40...125°C
Type of integrated circuit: PMIC
Output voltage: 0.8...5.5V
Number of channels: 1
Input voltage: 4.5...18V
Output current: 30A
Frequency: 0.5...1MHz
Topology: buck
Mounting: SMD
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NVMTS1D2N08H nvmts1d2n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 337A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 337A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D2N08H ntmts1d2n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D5N08H ntmts1d5n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D6N10MCTXG ntmts1d6n10mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D5N08H nvmts1d5n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 129W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.4mΩ
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D6N10MCTXG nvmts1d6n10mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NCP152MX280120TCG ncp152-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6
Mounting: SMD
Tolerance: ±2%
Operating temperature: -40...85°C
Manufacturer series: NCP152
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN6
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 2
Output voltage: 1.2V; 2.8V
Input voltage: 1.9...5.25V
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FDH333 ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw
FDH333
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1.15V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 1A
Case: DO35
Power dissipation: 0.5W
Leakage current: 0.5µA
Max. forward voltage: 1.15V
Max. load current: 0.6A
Capacitance: 6pF
на замовлення 2714 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.19 грн
54+7.52 грн
100+5.34 грн
250+4.64 грн
500+4.18 грн
1000+3.75 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
FDH333TR ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; reel,tape; Ifsm: 4A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
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FDMC86324 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF5A2BDEE67E28&compId=FDMC86324.pdf?ci_sign=d8ca39e5aa8dc96b53f27e3ed61837eed76dd64a
FDMC86324
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: PQFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 40mΩ
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 80V
Kind of channel: enhancement
Mounting: SMD
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MURA120T3G mura115t3-d.pdf
MURA120T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 1724 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+25.26 грн
25+16.58 грн
50+12.62 грн
100+11.24 грн
250+9.70 грн
500+8.73 грн
1000+8.09 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
MMSZ22T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f
MMSZ22T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 13985 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.97 грн
76+5.34 грн
85+4.77 грн
131+3.09 грн
163+2.48 грн
500+1.67 грн
1000+1.50 грн
1500+1.43 грн
3000+1.42 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BCP68T1G bcp68t1-d.pdf
BCP68T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
на замовлення 968 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.45 грн
18+22.72 грн
25+18.76 грн
100+14.07 грн
500+10.43 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SBCP68T1G bcp68t1-d.pdf
SBCP68T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
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NSVBCP68T1G bcp68t1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
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RURG3060-F085 rurg3060_f085-d.pdf
RURG3060-F085
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-2
Reverse recovery time: 80ns
Application: automotive industry
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+269.10 грн
3+228.05 грн
10+180.33 грн
30+176.29 грн
Мінімальне замовлення: 2
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RURG3060 pVersion=0046&contRep=ZT&docId=E20E076F090AF2F1A303005056AB0C4F&compId=RURG3060.pdf?ci_sign=096424324fa4165118f1f0b0d48c400328ce5e8d
RURG3060
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 325A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-2
Reverse recovery time: 60ns
Max. load current: 70A
Max. forward voltage: 1.5V
Power dissipation: 125W
Features of semiconductor devices: ultrafast switching
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