| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FDMS0312AS | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 36W Case: Power56 Mounting: SMD Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape Gate charge: 31nC On-state resistance: 6.8mΩ Gate-source voltage: ±20V Drain current: 22A Drain-source voltage: 30V Pulsed drain current: 100A |
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| NCV8412ASTT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 5.9A; Ch: 1; N-Channel; SMD; SOT223-4 Case: SOT223-4 Mounting: SMD Type of integrated circuit: power switch Active logical level: low Kind of output: N-Channel Operating temperature: -40...150°C On-state resistance: 0.145Ω Output current: 5.9A Number of channels: 1 Supply voltage: 12V Kind of integrated circuit: low-side Application: automotive industry |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| FDT4N50NZU | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223 Mounting: SMD Case: SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 9.1nC Drain current: 2A Power dissipation: 2W Pulsed drain current: 6A On-state resistance: 3Ω Gate-source voltage: ±25V Drain-source voltage: 500V Kind of package: reel; tape Kind of channel: enhancement |
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| 74LCX07BQX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; QFN14; LCX; -40÷85°C Manufacturer series: LCX Kind of output: open drain Case: QFN14 Kind of package: reel; tape Mounting: SMD Kind of integrated circuit: buffer; non-inverting Operating temperature: -40...85°C Quiescent current: 10µA Supply voltage: 2...5.5V DC Number of channels: 6 Type of integrated circuit: digital |
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| MC74LCX07DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; LCX; LCX Manufacturer series: LCX Kind of output: open drain Case: TSSOP14 Kind of package: reel; tape Mounting: SMD Kind of integrated circuit: buffer; hex Integrated circuit features: tolerates a voltage of 5V on the inputs Operating temperature: -40...85°C Number of inputs: 1 Supply voltage: 1.5...5.5V DC Number of channels: 6 Technology: CMOS Type of integrated circuit: digital Family: LCX |
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| MBR0540 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape |
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| NCP360MUTBG | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V Type of integrated circuit: driver Case: uDFN6 Mounting: SMD Operating temperature: -40...85°C Application: USB Input voltage: 1.2...20V Kind of output: transistor Threshold on-voltage: 3V |
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| NCP360SNAET1G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V Type of integrated circuit: driver Case: TSOP5 Mounting: SMD Operating temperature: -40...85°C Application: USB Input voltage: 1.2...20V Kind of output: transistor Threshold on-voltage: 3V |
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| NCP360SNT1G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V Type of integrated circuit: driver Case: TSOP5 Mounting: SMD Operating temperature: -40...85°C Application: USB Input voltage: 1.2...20V Kind of output: transistor Threshold on-voltage: 3V |
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BAV102 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 150V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A Mounting: SMD Capacitance: 5pF Semiconductor structure: single diode Type of diode: switching Reverse recovery time: 50ns Load current: 0.5A Max. forward voltage: 1.25V Power dissipation: 0.5W Max. load current: 0.6A Max. forward impulse current: 4A Max. off-state voltage: 150V Case: SOD80 Kind of package: reel; tape |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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| NVMFWS3D0P04M8LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFNW5 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -183A Pulsed drain current: -900A Power dissipation: 86W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 124nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMFS005P03P8ZT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -164A; Idm: -597A; 104W; DFN5 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -164A Pulsed drain current: -597A Power dissipation: 104W Case: DFN5 Gate-source voltage: ±25V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 112nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMFS3D0P04M8LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFN5 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -183A Pulsed drain current: -900A Power dissipation: 86W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 124nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMFS6H801NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Pulsed drain current: 900A Power dissipation: 83W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMFS6H801NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Pulsed drain current: 900A Power dissipation: 83W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMFS6H801NLWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Pulsed drain current: 900A Power dissipation: 83W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement |
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FOD4108 | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; triac; DIP6; Ch: 1; FOD4108; 10kV/μs; t(on): 60us Case: DIP6 Mounting: THT Type of optocoupler: optotriac Kind of output: triac Turn-off time: 52µs Turn-on time: 60µs Number of channels: 1 Insulation voltage: 5kV Slew rate: 10kV/μs Manufacturer series: FOD4108 |
на замовлення 935 шт: термін постачання 21-30 дні (днів) |
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| FGH50T65UPD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 170W Pulsed collector current: 150A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 230nC |
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| FGHL50T65MQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 134W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 94nC |
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| FGHL50T65LQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 170W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 509nC |
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| FGHL50T65MQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 134W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 99nC |
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| FGHL50T65SQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 134W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 99.7nC |
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| AFGHL50T65RQDN | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Application: automotive industry Power dissipation: 173W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 65nC |
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| AFGHL50T65SQ | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 134W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 99nC |
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| AFGHL50T65SQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 134W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 102nC |
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| AFGHL50T65SQDC | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 119W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 94nC |
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NTK3139PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.57A Power dissipation: 0.45W Case: SOT723 Gate-source voltage: ±6V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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MC14050BDR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 6 Technology: CMOS Mounting: SMD Case: SO16 Operating temperature: -55...125°C Supply voltage: 3...18V DC |
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| MC14050BDTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; hex Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape |
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1N5355BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 18V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 18V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB Kind of package: reel; tape |
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| NTTFS008N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFN8 Case: WDFN8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 10nC On-state resistance: 8.5mΩ Power dissipation: 12W Drain current: 48A Drain-source voltage: 40V Pulsed drain current: 193A Polarisation: unipolar Kind of channel: enhancement |
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| NVTFWS008N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFNW8 Case: WDFNW8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 10nC On-state resistance: 8.5mΩ Power dissipation: 12W Drain current: 48A Drain-source voltage: 40V Pulsed drain current: 193A Polarisation: unipolar Kind of channel: enhancement |
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| NVH4L030N120M3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 52A Pulsed drain current: 193A Power dissipation: 156W Case: TO247-4 Gate-source voltage: -3...18V On-state resistance: 58mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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| NTH4L030N120M3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 52A Pulsed drain current: 193A Power dissipation: 156W Case: TO247-4 Gate-source voltage: -10...22V On-state resistance: 58mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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FDT3N40TF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.2A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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| NTBG030N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 54A Pulsed drain current: 207A Power dissipation: 174W Case: D2PAK-7 Gate-source voltage: -10...22V On-state resistance: 58mΩ Mounting: SMD Gate charge: 107nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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| NVBG030N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 54A Pulsed drain current: 207A Power dissipation: 174W Case: D2PAK-7 Gate-source voltage: -3...18V On-state resistance: 58mΩ Mounting: SMD Gate charge: 107nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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| CPH5524-TL-E | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 3A; 1.2W Kind of transistor: complementary pair Case: CPH5 Type of transistor: NPN / PNP Kind of package: reel; tape Mounting: SMD Power dissipation: 1.2W Collector current: 3A Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 380MHz Polarisation: bipolar |
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| NCP45524IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Case: DFN8 Active logical level: high Kind of integrated circuit: high-side Kind of output: N-Channel Kind of package: reel; tape Mounting: SMD On-state resistance: 31.7mΩ Output current: 6A Control voltage: 0.5...13.5V DC Number of channels: 1 Supply voltage: 3...5.5V DC Type of integrated circuit: power switch |
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| NCP45524IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Case: DFN8 Active logical level: low Kind of integrated circuit: high-side Kind of output: N-Channel Kind of package: reel; tape Mounting: SMD On-state resistance: 31.7mΩ Output current: 6A Control voltage: 0.5...13.5V DC Number of channels: 1 Supply voltage: 3...5.5V DC Type of integrated circuit: power switch |
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FOD2742B | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 2.5kV; SOIC8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 100-200%@10mA Case: SOIC8 |
на замовлення 332 шт: термін постачання 21-30 дні (днів) |
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| LM2576D2TR4-012G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
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| LM2576D2TR4-5G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
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| LM2576D2T-15G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 18÷40VDC; Uout: 15VDC; 3A; D2PAK-5; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: tube Topology: buck Frequency: 42...63kHz Operating temperature: -40...125°C Number of channels: 1 Output current: 3A Output voltage: 15V DC Input voltage: 18...40V DC |
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| NCV8843MNR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; DFN18; SMD; reel,tape; automotive industry Application: automotive industry Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Case: DFN18 Type of integrated circuit: PMIC Mounting: SMD |
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MOC3042M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Mounting: THT Number of channels: 1 Slew rate: 1kV/μs Manufacturer series: MOC304XM |
на замовлення 868 шт: термін постачання 21-30 дні (днів) |
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MMBT5401 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 50...240 Mounting: SMD Kind of package: reel; tape Frequency: 100...300MHz |
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FQPF15P12 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 41W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -120V Drain current: -10.6A Pulsed drain current: -60A Power dissipation: 41W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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|
FQPF7P20 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.3A Pulsed drain current: -20.8A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| NJL3281DG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN + diode; bipolar; 260V; 15A; 200W; TO264-5 Type of transistor: NPN + diode Polarisation: bipolar Collector-emitter voltage: 260V Collector current: 15A Power dissipation: 200W Case: TO264-5 Pulsed collector current: 25A Current gain: 45...150 Mounting: THT Kind of package: tube Frequency: 30MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
MPSA06G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.625W; TO92 Type of transistor: NPN Mounting: THT Case: TO92 Collector current: 0.5A Power dissipation: 0.625W Collector-emitter voltage: 80V Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MPSA06RA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN Type of transistor: NPN |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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 |
FDP51N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 320W; TO220-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET On-state resistance: 60mΩ Drain current: 30A Gate-source voltage: ±30V Power dissipation: 320W Drain-source voltage: 250V Polarisation: unipolar Case: TO220-3 |
на замовлення 78 шт: термін постачання 21-30 дні (днів) |
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FDPF51N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 38W; TO220FP Mounting: THT Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Technology: UltraFET® Gate charge: 70nC On-state resistance: 48mΩ Drain current: 30A Gate-source voltage: ±30V Power dissipation: 38W Drain-source voltage: 250V Polarisation: unipolar Case: TO220FP |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
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| NV25320DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 2.5÷5.5V; 10MHz Case: TSSOP8 Mounting: SMD Kind of package: reel; tape Interface: SPI Kind of memory: EEPROM Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Operating voltage: 2.5...5.5V Memory: 32kb EEPROM Clock frequency: 10MHz Memory organisation: 4kx8bit Type of integrated circuit: EEPROM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NV25320DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 2.5÷5.5V; 10MHz; SOIC8 Case: SOIC8 Mounting: SMD Kind of package: reel; tape Interface: SPI Kind of memory: EEPROM Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Operating voltage: 2.5...5.5V Memory: 32kb EEPROM Clock frequency: 10MHz Memory organisation: 4kx8bit Type of integrated circuit: EEPROM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FGD3N60LSDTM | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| NSDP301MX2WT5G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; X2DFNW2; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Case: X2DFNW2 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NSDP301MX3T5G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; X3DFN2; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Case: X3DFN2 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| NSVDP301MX2WT5G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; X2DFNW2; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Case: X2DFNW2 Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| FDMS0312AS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 36W
Case: Power56
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Gate charge: 31nC
On-state resistance: 6.8mΩ
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 30V
Pulsed drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 36W
Case: Power56
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Gate charge: 31nC
On-state resistance: 6.8mΩ
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 30V
Pulsed drain current: 100A
товару немає в наявності
В кошику
од. на суму грн.
| NCV8412ASTT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.9A; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Type of integrated circuit: power switch
Active logical level: low
Kind of output: N-Channel
Operating temperature: -40...150°C
On-state resistance: 0.145Ω
Output current: 5.9A
Number of channels: 1
Supply voltage: 12V
Kind of integrated circuit: low-side
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.9A; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Type of integrated circuit: power switch
Active logical level: low
Kind of output: N-Channel
Operating temperature: -40...150°C
On-state resistance: 0.145Ω
Output current: 5.9A
Number of channels: 1
Supply voltage: 12V
Kind of integrated circuit: low-side
Application: automotive industry
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 50.54 грн |
| FDT4N50NZU |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223
Mounting: SMD
Case: SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.1nC
Drain current: 2A
Power dissipation: 2W
Pulsed drain current: 6A
On-state resistance: 3Ω
Gate-source voltage: ±25V
Drain-source voltage: 500V
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223
Mounting: SMD
Case: SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.1nC
Drain current: 2A
Power dissipation: 2W
Pulsed drain current: 6A
On-state resistance: 3Ω
Gate-source voltage: ±25V
Drain-source voltage: 500V
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| 74LCX07BQX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; QFN14; LCX; -40÷85°C
Manufacturer series: LCX
Kind of output: open drain
Case: QFN14
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...85°C
Quiescent current: 10µA
Supply voltage: 2...5.5V DC
Number of channels: 6
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; QFN14; LCX; -40÷85°C
Manufacturer series: LCX
Kind of output: open drain
Case: QFN14
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...85°C
Quiescent current: 10µA
Supply voltage: 2...5.5V DC
Number of channels: 6
Type of integrated circuit: digital
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В кошику
од. на суму грн.
| MC74LCX07DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; LCX; LCX
Manufacturer series: LCX
Kind of output: open drain
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: buffer; hex
Integrated circuit features: tolerates a voltage of 5V on the inputs
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 1.5...5.5V DC
Number of channels: 6
Technology: CMOS
Type of integrated circuit: digital
Family: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; LCX; LCX
Manufacturer series: LCX
Kind of output: open drain
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: buffer; hex
Integrated circuit features: tolerates a voltage of 5V on the inputs
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 1.5...5.5V DC
Number of channels: 6
Technology: CMOS
Type of integrated circuit: digital
Family: LCX
товару немає в наявності
В кошику
од. на суму грн.
| MBR0540 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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В кошику
од. на суму грн.
| NCP360MUTBG |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
Category: Drivers - integrated circuits
Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
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В кошику
од. на суму грн.
| NCP360SNAET1G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
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В кошику
од. на суму грн.
| NCP360SNT1G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
товару немає в наявності
В кошику
од. на суму грн.
| BAV102 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Mounting: SMD
Capacitance: 5pF
Semiconductor structure: single diode
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.5A
Max. forward voltage: 1.25V
Power dissipation: 0.5W
Max. load current: 0.6A
Max. forward impulse current: 4A
Max. off-state voltage: 150V
Case: SOD80
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Mounting: SMD
Capacitance: 5pF
Semiconductor structure: single diode
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.5A
Max. forward voltage: 1.25V
Power dissipation: 0.5W
Max. load current: 0.6A
Max. forward impulse current: 4A
Max. off-state voltage: 150V
Case: SOD80
Kind of package: reel; tape
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 94+ | 3.98 грн |
| NVMFWS3D0P04M8LT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMFS005P03P8ZT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -164A; Idm: -597A; 104W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -164A
Pulsed drain current: -597A
Power dissipation: 104W
Case: DFN5
Gate-source voltage: ±25V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -164A; Idm: -597A; 104W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -164A
Pulsed drain current: -597A
Power dissipation: 104W
Case: DFN5
Gate-source voltage: ±25V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| NVMFS3D0P04M8LT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS6H801NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NVMFS6H801NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| NVMFS6H801NLWFT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FOD4108 |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; triac; DIP6; Ch: 1; FOD4108; 10kV/μs; t(on): 60us
Case: DIP6
Mounting: THT
Type of optocoupler: optotriac
Kind of output: triac
Turn-off time: 52µs
Turn-on time: 60µs
Number of channels: 1
Insulation voltage: 5kV
Slew rate: 10kV/μs
Manufacturer series: FOD4108
Category: Optotriacs
Description: Optotriac; 5kV; triac; DIP6; Ch: 1; FOD4108; 10kV/μs; t(on): 60us
Case: DIP6
Mounting: THT
Type of optocoupler: optotriac
Kind of output: triac
Turn-off time: 52µs
Turn-on time: 60µs
Number of channels: 1
Insulation voltage: 5kV
Slew rate: 10kV/μs
Manufacturer series: FOD4108
на замовлення 935 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.60 грн |
| 6+ | 170.24 грн |
| 10+ | 154.33 грн |
| FGH50T65UPD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
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| FGHL50T65MQD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
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| FGHL50T65LQDT |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 509nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 509nC
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| FGHL50T65MQDT |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
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| FGHL50T65SQDT |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99.7nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99.7nC
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| AFGHL50T65RQDN |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Application: automotive industry
Power dissipation: 173W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 65nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Application: automotive industry
Power dissipation: 173W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 65nC
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| AFGHL50T65SQ |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
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| AFGHL50T65SQD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 102nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 102nC
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| AFGHL50T65SQDC |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 119W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 119W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
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| NTK3139PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.57A
Power dissipation: 0.45W
Case: SOT723
Gate-source voltage: ±6V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.57A
Power dissipation: 0.45W
Case: SOT723
Gate-source voltage: ±6V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.42 грн |
| 44+ | 9.23 грн |
| 57+ | 7.08 грн |
| 100+ | 6.36 грн |
| 268+ | 3.50 грн |
| 735+ | 3.31 грн |
| MC14050BDR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
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| MC14050BDTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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| 1N5355BRLG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 18V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 18V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 5W; 18V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 18V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
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| NTTFS008N04CTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFN8
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 10nC
On-state resistance: 8.5mΩ
Power dissipation: 12W
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFN8
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 10nC
On-state resistance: 8.5mΩ
Power dissipation: 12W
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
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| NVTFWS008N04CTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFNW8
Case: WDFNW8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 10nC
On-state resistance: 8.5mΩ
Power dissipation: 12W
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFNW8
Case: WDFNW8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 10nC
On-state resistance: 8.5mΩ
Power dissipation: 12W
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
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| NVH4L030N120M3S |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Case: TO247-4
Gate-source voltage: -3...18V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Case: TO247-4
Gate-source voltage: -3...18V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| NTH4L030N120M3S |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Case: TO247-4
Gate-source voltage: -10...22V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Case: TO247-4
Gate-source voltage: -10...22V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| FDT3N40TF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| NTBG030N120M3S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| NVBG030N120M3S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| CPH5524-TL-E |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 3A; 1.2W
Kind of transistor: complementary pair
Case: CPH5
Type of transistor: NPN / PNP
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 1.2W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 380MHz
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 3A; 1.2W
Kind of transistor: complementary pair
Case: CPH5
Type of transistor: NPN / PNP
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 1.2W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 380MHz
Polarisation: bipolar
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| NCP45524IMNTWG-H |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Active logical level: high
Kind of integrated circuit: high-side
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 31.7mΩ
Output current: 6A
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Active logical level: high
Kind of integrated circuit: high-side
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 31.7mΩ
Output current: 6A
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Type of integrated circuit: power switch
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| NCP45524IMNTWG-L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Active logical level: low
Kind of integrated circuit: high-side
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 31.7mΩ
Output current: 6A
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Active logical level: low
Kind of integrated circuit: high-side
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 31.7mΩ
Output current: 6A
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Type of integrated circuit: power switch
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| FOD2742B | |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 2.5kV; SOIC8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-200%@10mA
Case: SOIC8
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 2.5kV; SOIC8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-200%@10mA
Case: SOIC8
на замовлення 332 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 84.81 грн |
| 10+ | 53.30 грн |
| 25+ | 51.71 грн |
| LM2576D2TR4-012G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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| LM2576D2TR4-5G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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| LM2576D2T-15G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 18÷40VDC; Uout: 15VDC; 3A; D2PAK-5; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Topology: buck
Frequency: 42...63kHz
Operating temperature: -40...125°C
Number of channels: 1
Output current: 3A
Output voltage: 15V DC
Input voltage: 18...40V DC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 18÷40VDC; Uout: 15VDC; 3A; D2PAK-5; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Topology: buck
Frequency: 42...63kHz
Operating temperature: -40...125°C
Number of channels: 1
Output current: 3A
Output voltage: 15V DC
Input voltage: 18...40V DC
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| NCV8843MNR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DFN18; SMD; reel,tape; automotive industry
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Case: DFN18
Type of integrated circuit: PMIC
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DFN18; SMD; reel,tape; automotive industry
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Case: DFN18
Type of integrated circuit: PMIC
Mounting: SMD
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| MOC3042M |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 1kV/μs
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 1kV/μs
Manufacturer series: MOC304XM
на замовлення 868 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 62.54 грн |
| 12+ | 34.52 грн |
| 25+ | 29.51 грн |
| 50+ | 26.49 грн |
| 100+ | 23.86 грн |
| 500+ | 23.39 грн |
| MMBT5401 |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
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| FQPF15P12 |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 41W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Pulsed drain current: -60A
Power dissipation: 41W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 41W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Pulsed drain current: -60A
Power dissipation: 41W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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| FQPF7P20 |
|
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.3A
Pulsed drain current: -20.8A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.3A; Idm: -20.8A; 45W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.3A
Pulsed drain current: -20.8A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
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| NJL3281DG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN + diode; bipolar; 260V; 15A; 200W; TO264-5
Type of transistor: NPN + diode
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264-5
Pulsed collector current: 25A
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN + diode; bipolar; 260V; 15A; 200W; TO264-5
Type of transistor: NPN + diode
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264-5
Pulsed collector current: 25A
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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| MPSA06G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 0.5A
Power dissipation: 0.625W
Collector-emitter voltage: 80V
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Mounting: THT
Case: TO92
Collector current: 0.5A
Power dissipation: 0.625W
Collector-emitter voltage: 80V
Polarisation: bipolar
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| MPSA06RA |
|
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 7.20 грн |
| FDP51N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 320W; TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
On-state resistance: 60mΩ
Drain current: 30A
Gate-source voltage: ±30V
Power dissipation: 320W
Drain-source voltage: 250V
Polarisation: unipolar
Case: TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 320W; TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
On-state resistance: 60mΩ
Drain current: 30A
Gate-source voltage: ±30V
Power dissipation: 320W
Drain-source voltage: 250V
Polarisation: unipolar
Case: TO220-3
на замовлення 78 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 201.32 грн |
| 5+ | 144.78 грн |
| 8+ | 123.30 грн |
| 10+ | 120.92 грн |
| 21+ | 116.94 грн |
| 50+ | 113.76 грн |
| FDPF51N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 38W; TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: UltraFET®
Gate charge: 70nC
On-state resistance: 48mΩ
Drain current: 30A
Gate-source voltage: ±30V
Power dissipation: 38W
Drain-source voltage: 250V
Polarisation: unipolar
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 38W; TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: UltraFET®
Gate charge: 70nC
On-state resistance: 48mΩ
Drain current: 30A
Gate-source voltage: ±30V
Power dissipation: 38W
Drain-source voltage: 250V
Polarisation: unipolar
Case: TO220FP
на замовлення 86 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 186.76 грн |
| 10+ | 98.64 грн |
| 27+ | 93.07 грн |
| NV25320DTHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Interface: SPI
Kind of memory: EEPROM
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 32kb EEPROM
Clock frequency: 10MHz
Memory organisation: 4kx8bit
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Interface: SPI
Kind of memory: EEPROM
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 32kb EEPROM
Clock frequency: 10MHz
Memory organisation: 4kx8bit
Type of integrated circuit: EEPROM memory
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| NV25320DWHFT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Interface: SPI
Kind of memory: EEPROM
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 32kb EEPROM
Clock frequency: 10MHz
Memory organisation: 4kx8bit
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Interface: SPI
Kind of memory: EEPROM
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 32kb EEPROM
Clock frequency: 10MHz
Memory organisation: 4kx8bit
Type of integrated circuit: EEPROM memory
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| FGD3N60LSDTM |
|
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 52.09 грн |
| NSDP301MX2WT5G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X2DFNW2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Case: X2DFNW2
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X2DFNW2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Case: X2DFNW2
Kind of package: reel; tape
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| NSDP301MX3T5G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X3DFN2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Case: X3DFN2
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X3DFN2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Case: X3DFN2
Kind of package: reel; tape
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| NSVDP301MX2WT5G |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X2DFNW2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Case: X2DFNW2
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X2DFNW2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Case: X2DFNW2
Kind of package: reel; tape
Application: automotive industry
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