| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MC74LVXC3245DTRG | ONSEMI |
Category: Level translatorsDescription: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver; translator Number of channels: 8 Supply voltage: 2.3...5.5V DC Mounting: SMD Case: TSSOP24 Operating temperature: -40...85°C Kind of package: reel; tape Manufacturer series: LVX Quiescent current: 50µA Kind of output: 3-state |
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| NFAM5065L4BT | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge,NTC thermistor; 50A; Ch: 6 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP39 (54x31) Output current: 50A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13...18.5/0...400V DC Frequency: 20kHz Collector-emitter voltage: 650V |
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| NTP125N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 67A Power dissipation: 171W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
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| NVB125N65S3 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| FCMT125N65S3 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: PQFN4 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| NVHL025N65S3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 75A Pulsed drain current: 300A Power dissipation: 595W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 25mΩ Mounting: THT Gate charge: 236nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| ESD8472MUT5G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape Type of diode: TVS Max. off-state voltage: 5.3V Breakdown voltage: 7...12V Semiconductor structure: bidirectional Case: X3DFN2 Mounting: SMD Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||||
| SZESD8472MUT5G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape Type of diode: TVS Max. off-state voltage: 5.3V Breakdown voltage: 7...12V Semiconductor structure: bidirectional Case: X3DFN2 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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CPH6341-TL-W | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.6W; SOT26 Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: SOT26 Drain-source voltage: -30V Pulsed drain current: -20A Drain current: -5A Gate charge: 10nC On-state resistance: 59mΩ Power dissipation: 1.6W Gate-source voltage: ±20V Polarisation: unipolar |
на замовлення 264 шт: термін постачання 21-30 дні (днів) |
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NCV1117DT12RKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 12V Output current: 1A Case: DPAK Mounting: SMD Number of channels: 1 Kind of package: reel; tape Application: automotive industry |
на замовлення 2400 шт: термін постачання 21-30 дні (днів) |
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MPSA65 | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.625W Case: TO92 Mounting: THT |
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В кошику од. на суму грн. | ||||||||||||||||||
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FDD86102LZ | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PowerTrench® Mounting: SMD Polarisation: unipolar Gate charge: 26nC On-state resistance: 40mΩ Gate-source voltage: ±20V Drain current: 35A Power dissipation: 54W Drain-source voltage: 100V |
на замовлення 1829 шт: термін постачання 21-30 дні (днів) |
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| FCMT080N65S3 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 95A Power dissipation: 260W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| FCMT180N65S3 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 42.5A Power dissipation: 139W Case: PQFN4 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR130T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape Case: SOD123 Mounting: SMD Type of diode: Schottky rectifying Max. forward voltage: 0.47V Load current: 1A Max. forward impulse current: 5.5A Max. off-state voltage: 30V Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 5908 шт: термін постачання 21-30 дні (днів) |
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KSC5338D | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 450V; 5A; 75W; TO220AB Type of transistor: NPN Collector-emitter voltage: 450V Collector current: 5A Power dissipation: 75W Case: TO220AB Pulsed collector current: 10A Mounting: THT Kind of package: bulk Features of semiconductor devices: integrated anti-parallel diode Current gain: 15...25 Polarisation: bipolar Frequency: 11MHz |
на замовлення 133 шт: термін постачання 21-30 дні (днів) |
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| NSQA6V8AW5T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4 Type of diode: TVS array Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC88A Max. off-state voltage: 5V Number of channels: 4 Kind of package: reel; tape Application: universal Breakdown voltage: 6.4...7.1V |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| NZL6V8AXV3T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.8V; double,common anode; SC89; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 6.8V Semiconductor structure: common anode; double Mounting: SMD Case: SC89 Max. off-state voltage: 4.5V Number of channels: 2 Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
| NZQA6V8AXV5T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; SOT553; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.46...7.14V Semiconductor structure: common anode Mounting: SMD Case: SOT553 Max. off-state voltage: 4.3V Number of channels: 4 Kind of package: reel; tape Application: universal Peak pulse power dissipation: 20W Version: ESD Max. forward impulse current: 1.6A |
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В кошику од. на суму грн. | |||||||||||||||||||
| SZNSQA6V8AW5T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.4...7.1V Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC88A Max. off-state voltage: 5V Number of channels: 4 Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
| 1SMB5948BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 91V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
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| SZ1SMB5948BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 91V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMFS0D9N03CGT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 298A; Idm: 900A; 144W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 131.4nC On-state resistance: 0.9mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 144W Drain current: 298A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| NTMFS0D8N03CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 337A; Idm: 900A; 150W; SO8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 50nC On-state resistance: 0.74mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 150W Drain current: 337A Case: SO8 Pulsed drain current: 900A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMFS0D55N03CGT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 462A; Idm: 900A; 199W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 173nC On-state resistance: 580µΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 199W Drain current: 462A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMFS0D5N03CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 464A; Idm: 900A; 200W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 80nC On-state resistance: 520µΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 200W Drain current: 464A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| NTMFS0D6N03CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 65nC On-state resistance: 620µΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 200W Drain current: 433A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMFS0D7N03CGT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 409A; Idm: 900A; 187W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 147nC On-state resistance: 0.65mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 187W Drain current: 409A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMFS0D8N02P1ET1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 365A; Idm: 762A; 139W; SO8 Power dissipation: 139W Mounting: SMD Kind of package: reel; tape Case: SO8 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 52nC On-state resistance: 0.68mΩ Drain-source voltage: 25V Drain current: 365A Pulsed drain current: 762A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMFS0D9N04XMT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
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1N5362BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 28V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 1N5362BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 28V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FOD8480 | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 5kV Case: SOP6 Turn-on time: 15ns Turn-off time: 10ns Slew rate: 40kV/μs Max. off-state voltage: 5V Output voltage: -0.5...35V Manufacturer series: FOD848x |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FOD8482 | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 5kV Case: SOP6 Turn-on time: 15ns Turn-off time: 10ns Slew rate: 40kV/μs Max. off-state voltage: 5V Output voltage: -0.5...35V Manufacturer series: FOD848x |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FOD8480T | ONSEMI |
Category: UnclassifiedDescription: FOD8480T |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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ESD9R3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD Type of diode: TVS Breakdown voltage: 4.8V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923 Max. off-state voltage: 3.3V Kind of package: reel; tape Version: ESD Leakage current: 1nA Peak pulse power dissipation: 0.15W Max. forward impulse current: 1A |
на замовлення 2401 шт: термін постачання 21-30 дні (днів) |
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ESD9L3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF; ESD Type of diode: TVS Breakdown voltage: 4.8V Mounting: SMD Case: SOD923 Max. off-state voltage: 3.3V Kind of package: reel; tape Version: ESD Capacitance: 0.5...0.9pF Leakage current: 1µA Peak pulse power dissipation: 0.15W |
на замовлення 8000 шт: термін постачання 21-30 дні (днів) |
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| ESD9X3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZESD9C3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZESD9R3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 4.8V; unidirectional; SOD923F; reel,tape Type of diode: TVS Breakdown voltage: 4.8V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZESD9X3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| UESD3.3DT5G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: common anode; double Mounting: SMD Case: SOT723 Max. off-state voltage: 3.3V Number of channels: 2 Kind of package: reel; tape Application: universal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SRDA3.3-4DR2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SO8 Max. off-state voltage: 3.3V Number of channels: 4 Kind of package: reel; tape Application: universal Peak pulse power dissipation: 0.5kW |
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В кошику од. на суму грн. | |||||||||||||||||||
| SZUESD3.3DT5G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: common anode; double Mounting: SMD Case: SOT723 Max. off-state voltage: 3.3V Number of channels: 2 Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
| NCS21674DMG100R2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 240kHz; Micro8; 100V/V; 0.5mV Mounting: SMT Operating temperature: -40...125°C Input bias current: 1µA Input offset current: 15µA Input offset voltage: 0.5mV Slew rate: 2V/μs Voltage supply range: 2.7...5.5V DC Kind of package: reel; tape Gain: 100V/V Bandwidth: 240kHz Number of channels: dual Type of integrated circuit: instrumentation amplifier Case: Micro8 |
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В кошику од. на суму грн. | |||||||||||||||||||
| NUP2202W1T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; bidirectional; SC88; Ch: 2; reel,tape Mounting: SMD Kind of package: reel; tape Case: SC88 Type of diode: TVS array Number of channels: 2 Application: universal Semiconductor structure: bidirectional |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LP2950CZ-5.0RPG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: Ammo Pack Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBRS140T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
на замовлення 4006 шт: термін постачання 21-30 дні (днів) |
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MBRS2040LT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Max. load current: 4A Max. off-state voltage: 40V Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 2A Max. forward voltage: 0.45V |
на замовлення 1462 шт: термін постачання 21-30 дні (днів) |
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MBRS3200T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.59V Kind of package: reel; tape |
на замовлення 557 шт: термін постачання 21-30 дні (днів) |
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MBRS3201T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.59V Kind of package: reel; tape |
на замовлення 429 шт: термін постачання 21-30 дні (днів) |
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MBRS410LT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 10V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.225V Kind of package: reel; tape |
на замовлення 1244 шт: термін постачання 21-30 дні (днів) |
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MBRS230LT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.63V Kind of package: reel; tape Max. load current: 4A |
на замовлення 1801 шт: термін постачання 21-30 дні (днів) |
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MBRS2H100T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.65V Kind of package: reel; tape Max. load current: 130A |
на замовлення 2377 шт: термін постачання 21-30 дні (днів) |
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MBRS120T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
на замовлення 158 шт: термін постачання 21-30 дні (днів) |
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| MBRS320T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 20V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MBRS330T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 30V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NJD35N04G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK Polarisation: bipolar Case: DPAK Kind of transistor: Darlington Type of transistor: NPN Kind of package: tube Mounting: SMD Collector current: 4A Power dissipation: 45W Collector-emitter voltage: 350V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MJD350T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: tube Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V Frequency: 10MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NJD35N04T4G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK Polarisation: bipolar Case: DPAK Kind of transistor: Darlington Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 4A Power dissipation: 45W Collector-emitter voltage: 350V |
товару немає в наявності |
В кошику од. на суму грн. |
| MC74LVXC3245DTRG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.3...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Quiescent current: 50µA
Kind of output: 3-state
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.3...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: LVX
Quiescent current: 50µA
Kind of output: 3-state
товару немає в наявності
В кошику
од. на суму грн.
| NFAM5065L4BT |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; 50A; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP39 (54x31)
Output current: 50A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13...18.5/0...400V DC
Frequency: 20kHz
Collector-emitter voltage: 650V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; 50A; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP39 (54x31)
Output current: 50A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13...18.5/0...400V DC
Frequency: 20kHz
Collector-emitter voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.
| NTP125N65S3H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
| NVB125N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| FCMT125N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| NVHL025N65S3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| ESD8472MUT5G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
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од. на суму грн.
| SZESD8472MUT5G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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В кошику
од. на суму грн.
| CPH6341-TL-W |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.6W; SOT26
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT26
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -5A
Gate charge: 10nC
On-state resistance: 59mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.6W; SOT26
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT26
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -5A
Gate charge: 10nC
On-state resistance: 59mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 264 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.36 грн |
| 13+ | 32.69 грн |
| 14+ | 29.74 грн |
| 100+ | 20.73 грн |
| NCV1117DT12RKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.34 грн |
| 18+ | 23.36 грн |
| 100+ | 20.33 грн |
| 250+ | 18.50 грн |
| 1000+ | 17.22 грн |
| MPSA65 |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
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| FDD86102LZ |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Mounting: SMD
Polarisation: unipolar
Gate charge: 26nC
On-state resistance: 40mΩ
Gate-source voltage: ±20V
Drain current: 35A
Power dissipation: 54W
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Mounting: SMD
Polarisation: unipolar
Gate charge: 26nC
On-state resistance: 40mΩ
Gate-source voltage: ±20V
Drain current: 35A
Power dissipation: 54W
Drain-source voltage: 100V
на замовлення 1829 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 88.45 грн |
| 6+ | 70.97 грн |
| 10+ | 66.18 грн |
| 50+ | 53.42 грн |
| 100+ | 51.83 грн |
| FCMT080N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 95A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 95A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FCMT180N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 139W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 139W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MBR130T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape
Case: SOD123
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 1A; reel,tape
Case: SOD123
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward voltage: 0.47V
Load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 5908 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.74 грн |
| 43+ | 9.41 грн |
| 48+ | 8.45 грн |
| 59+ | 6.78 грн |
| 100+ | 6.14 грн |
| 500+ | 4.85 грн |
| 1000+ | 4.35 грн |
| 1500+ | 4.08 грн |
| 3000+ | 3.64 грн |
| KSC5338D |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 75W; TO220AB
Type of transistor: NPN
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 75W
Case: TO220AB
Pulsed collector current: 10A
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: integrated anti-parallel diode
Current gain: 15...25
Polarisation: bipolar
Frequency: 11MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 75W; TO220AB
Type of transistor: NPN
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 75W
Case: TO220AB
Pulsed collector current: 10A
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: integrated anti-parallel diode
Current gain: 15...25
Polarisation: bipolar
Frequency: 11MHz
на замовлення 133 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 79.00 грн |
| 10+ | 52.15 грн |
| 50+ | 44.02 грн |
| 100+ | 40.91 грн |
| NSQA6V8AW5T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Breakdown voltage: 6.4...7.1V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Breakdown voltage: 6.4...7.1V
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.63 грн |
| 16+ | 26.23 грн |
| 100+ | 18.90 грн |
| 500+ | 14.03 грн |
| 1000+ | 12.92 грн |
| NZL6V8AXV3T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; double,common anode; SC89; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 4.5V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; double,common anode; SC89; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 4.5V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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| NZQA6V8AXV5T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; SOT553; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode
Mounting: SMD
Case: SOT553
Max. off-state voltage: 4.3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Peak pulse power dissipation: 20W
Version: ESD
Max. forward impulse current: 1.6A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; SOT553; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode
Mounting: SMD
Case: SOT553
Max. off-state voltage: 4.3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Peak pulse power dissipation: 20W
Version: ESD
Max. forward impulse current: 1.6A
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| SZNSQA6V8AW5T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
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| 1SMB5948BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
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| SZ1SMB5948BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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| NTMFS0D9N03CGT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 298A; Idm: 900A; 144W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 131.4nC
On-state resistance: 0.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 144W
Drain current: 298A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 298A; Idm: 900A; 144W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 131.4nC
On-state resistance: 0.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 144W
Drain current: 298A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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| NTMFS0D8N03CT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 337A; Idm: 900A; 150W; SO8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 0.74mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 150W
Drain current: 337A
Case: SO8
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 337A; Idm: 900A; 150W; SO8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 0.74mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 150W
Drain current: 337A
Case: SO8
Pulsed drain current: 900A
Kind of channel: enhancement
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| NTMFS0D55N03CGT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 462A; Idm: 900A; 199W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 173nC
On-state resistance: 580µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 199W
Drain current: 462A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 462A; Idm: 900A; 199W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 173nC
On-state resistance: 580µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 199W
Drain current: 462A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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| NTMFS0D5N03CT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 464A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 520µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 464A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 464A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 520µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 464A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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| NTMFS0D6N03CT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 620µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 433A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 433A; Idm: 900A; 200W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 620µΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 200W
Drain current: 433A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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| NTMFS0D7N03CGT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 409A; Idm: 900A; 187W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 147nC
On-state resistance: 0.65mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 187W
Drain current: 409A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 409A; Idm: 900A; 187W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 147nC
On-state resistance: 0.65mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 187W
Drain current: 409A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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| NTMFS0D8N02P1ET1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 365A; Idm: 762A; 139W; SO8
Power dissipation: 139W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 0.68mΩ
Drain-source voltage: 25V
Drain current: 365A
Pulsed drain current: 762A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 365A; Idm: 762A; 139W; SO8
Power dissipation: 139W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 0.68mΩ
Drain-source voltage: 25V
Drain current: 365A
Pulsed drain current: 762A
Kind of channel: enhancement
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| NTMFS0D9N04XMT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 76.43 грн |
| 1N5362BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| 1N5362BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 28V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 28V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| FOD8480 |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
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| FOD8482 |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 15ns
Turn-off time: 10ns
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...35V
Manufacturer series: FOD848x
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| FOD8480T |
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на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 93.60 грн |
| ESD9R3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Leakage current: 1nA
Peak pulse power dissipation: 0.15W
Max. forward impulse current: 1A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Leakage current: 1nA
Peak pulse power dissipation: 0.15W
Max. forward impulse current: 1A
на замовлення 2401 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.21 грн |
| 18+ | 23.28 грн |
| 50+ | 18.90 грн |
| 100+ | 17.38 грн |
| 500+ | 16.98 грн |
| ESD9L3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Capacitance: 0.5...0.9pF
Leakage current: 1µA
Peak pulse power dissipation: 0.15W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF; ESD
Type of diode: TVS
Breakdown voltage: 4.8V
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Capacitance: 0.5...0.9pF
Leakage current: 1µA
Peak pulse power dissipation: 0.15W
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.47 грн |
| 25+ | 16.11 грн |
| 30+ | 13.64 грн |
| 100+ | 6.86 грн |
| 250+ | 6.70 грн |
| ESD9X3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
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| SZESD9C3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
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| SZESD9R3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.8V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.8V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
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| SZESD9X3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
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| UESD3.3DT5G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: universal
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: universal
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| SRDA3.3-4DR2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Peak pulse power dissipation: 0.5kW
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Peak pulse power dissipation: 0.5kW
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| SZUESD3.3DT5G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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| NCS21674DMG100R2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 240kHz; Micro8; 100V/V; 0.5mV
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 1µA
Input offset current: 15µA
Input offset voltage: 0.5mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Kind of package: reel; tape
Gain: 100V/V
Bandwidth: 240kHz
Number of channels: dual
Type of integrated circuit: instrumentation amplifier
Case: Micro8
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 240kHz; Micro8; 100V/V; 0.5mV
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 1µA
Input offset current: 15µA
Input offset voltage: 0.5mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Kind of package: reel; tape
Gain: 100V/V
Bandwidth: 240kHz
Number of channels: dual
Type of integrated circuit: instrumentation amplifier
Case: Micro8
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| NUP2202W1T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SC88
Type of diode: TVS array
Number of channels: 2
Application: universal
Semiconductor structure: bidirectional
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: SC88
Type of diode: TVS array
Number of channels: 2
Application: universal
Semiconductor structure: bidirectional
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| LP2950CZ-5.0RPG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
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| MBRS140T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
на замовлення 4006 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.33 грн |
| 26+ | 15.63 грн |
| 50+ | 12.60 грн |
| 100+ | 11.32 грн |
| 250+ | 9.73 грн |
| 500+ | 8.45 грн |
| 1000+ | 7.34 грн |
| 2500+ | 5.82 грн |
| MBRS2040LT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. load current: 4A
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.45V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. load current: 4A
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.45V
на замовлення 1462 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.62 грн |
| 22+ | 18.18 грн |
| 50+ | 14.43 грн |
| 100+ | 13.00 грн |
| 250+ | 11.32 грн |
| 500+ | 10.21 грн |
| 1000+ | 9.17 грн |
| MBRS3200T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
на замовлення 557 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.78 грн |
| 15+ | 26.95 грн |
| 17+ | 24.80 грн |
| 50+ | 20.25 грн |
| 100+ | 18.42 грн |
| 250+ | 16.11 грн |
| 500+ | 14.99 грн |
| MBRS3201T3G | ![]() |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
на замовлення 429 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 48.95 грн |
| 10+ | 40.35 грн |
| 11+ | 37.72 грн |
| 50+ | 31.82 грн |
| 100+ | 29.42 грн |
| 250+ | 27.91 грн |
| MBRS410LT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.225V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.225V
Kind of package: reel; tape
на замовлення 1244 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 85.87 грн |
| 6+ | 74.95 грн |
| MBRS230LT3G | ![]() |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Max. load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Max. load current: 4A
на замовлення 1801 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.62 грн |
| 18+ | 22.33 грн |
| 20+ | 20.81 грн |
| 50+ | 16.43 грн |
| 100+ | 14.59 грн |
| 250+ | 12.44 грн |
| 500+ | 11.08 грн |
| 1000+ | 10.68 грн |
| MBRS2H100T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 130A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 130A
на замовлення 2377 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.62 грн |
| 21+ | 19.06 грн |
| 50+ | 16.67 грн |
| MBRS120T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
на замовлення 158 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.21 грн |
| 17+ | 23.68 грн |
| 50+ | 18.34 грн |
| 100+ | 16.51 грн |
| MBRS320T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
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| MBRS330T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 80A
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| NJD35N04G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: tube
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: tube
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
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| MJD350T4G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: tube
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: tube
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
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| NJD35N04T4G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 350V; 4A; 45W; DPAK
Polarisation: bipolar
Case: DPAK
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 4A
Power dissipation: 45W
Collector-emitter voltage: 350V
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В кошику
од. на суму грн.














