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NTGD4161PT1G NTGD4161PT1G onsemi ntgd4161p-d.pdf Description: MOSFET 2P-CH 30V 1.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
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NTGS3130NT1G NTGS3130NT1G onsemi ntgs3130n-d.pdf Description: MOSFET N-CH 20V 4.23A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
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NTGS3136PT1G NTGS3136PT1G onsemi ntgs3136p-d.pdf Description: MOSFET P-CH 20V 3.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1901 pF @ 10 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
3000+29.76 грн
6000+26.68 грн
15000+25.69 грн
30000+23.27 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTGS3441BT1G NTGS3441BT1G onsemi ntgs3441b-d.pdf Description: MOSFET P-CH 20V 2.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
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NTGS3441PT1G NTGS3441PT1G onsemi ntgs3441p-d.pdf Description: MOSFET P-CH 20V 1.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 4.5V
Power Dissipation (Max): 510mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 15 V
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NTGS3443BT1G NTGS3443BT1G onsemi ntgs3443b-d.pdf Description: MOSFET P-CH 20V 2.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 819 pF @ 10 V
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NTGS3443T2G NTGS3443T2G onsemi ntgs3443t1-d.pdf Description: MOSFET P-CH 20V 2.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 5 V
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NTGS3447PT1G NTGS3447PT1G onsemi ntgs3447p-d.pdf Description: MOSFET P-CH 12V 3.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 6 V
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NTGS4111PT2G NTGS4111PT2G onsemi ntgs4111p-d.pdf Description: MOSFET P-CH 30V 2.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
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NTHD3133PFT1G NTHD3133PFT1G onsemi nthd3133pf-d.pdf Description: MOSFET P-CH 20V 3.2A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
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NTHD3133PFT3G NTHD3133PFT3G onsemi nthd3133pf-d.pdf Description: MOSFET P-CH 20V 3.2A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
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NTHD4102PT3G NTHD4102PT3G onsemi nthd4102p-d.pdf Description: MOSFET 2P-CH 20V 2.9A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
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NTHS4166NT1G NTHS4166NT1G onsemi nths4166n-d.pdf Description: MOSFET N-CH 30V 4.9A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
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NTJD4158CT2G NTJD4158CT2G onsemi ntjd4158c-d.pdf Description: MOSFET N/P-CH 30V/20V 0.25A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
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NTJS4160NT1G NTJS4160NT1G onsemi ntjs4160n-d.pdf Description: MOSFET N-CH 30V 1.8A SC88/SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
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NTK3139PT1G NTK3139PT1G onsemi ntk3139p-d.pdf Description: MOSFET P-CH 20V 660MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
4000+7.34 грн
8000+6.31 грн
12000+6.12 грн
20000+5.40 грн
28000+5.20 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
NTK3139PT5G NTK3139PT5G onsemi ntk3139p-d.pdf Description: MOSFET P-CH 20V 660MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-723
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
на замовлення 14100 шт:
термін постачання 21-31 дні (днів)
8000+6.09 грн
Мінімальне замовлення: 8000
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NTLJD3115PTAG NTLJD3115PTAG onsemi ntljd3115p-d.pdf Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
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NTLJD3119CTAG NTLJD3119CTAG onsemi ntljd3119c-d.pdf Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
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NTLJD3119CTBG NTLJD3119CTBG onsemi ntljd3119c-d.pdf Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
3000+24.16 грн
6000+21.54 грн
9000+20.66 грн
15000+18.73 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTLJF3117PT1G NTLJF3117PT1G onsemi ntljf3117p-d.pdf Description: MOSFET P-CH 20V 2.3A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+12.67 грн
Мінімальне замовлення: 3000
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NTLJF3117PTAG NTLJF3117PTAG onsemi ntljf3117p-d.pdf Description: MOSFET P-CH 20V 2.3A 6WDFN
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NTLJF3118NTAG NTLJF3118NTAG onsemi ntljf3118n-d.pdf Description: MOSFET N-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 10 V
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NTLJF3118NTBG NTLJF3118NTBG onsemi ntljf3118n-d.pdf Description: MOSFET N-CH 20V 2.6A 6WDFN
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NTLJS2103PTAG NTLJS2103PTAG onsemi ntljs2103p-d.pdf Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
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NTLJS2103PTBG NTLJS2103PTBG onsemi ntljs2103p-d.pdf Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+15.65 грн
6000+15.00 грн
9000+14.82 грн
15000+13.20 грн
21000+12.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTLJS4114NT1G NTLJS4114NT1G onsemi ntljs4114n-d.pdf Description: MOSFET N-CH 30V 3.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
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NTMD4840NR2G NTMD4840NR2G onsemi ntmd4840n-d.pdf Description: MOSFET 2N-CH 30V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 680mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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NTMFS4744NT1G NTMFS4744NT1G onsemi ntmfs4744n-d.pdf Description: MOSFET N-CH 30V 7A 5DFN
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NTMFS4744NT3G NTMFS4744NT3G onsemi ntmfs4744n-d.pdf Description: MOSFET N-CH 30V 7A 5DFN
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NTMFS4833NT1G NTMFS4833NT1G onsemi NTMFS4833N-D.pdf Description: MOSFET N-CH 30V 16A/156A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 910mW (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 12 V
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NTMFS4833NT3G NTMFS4833NT3G onsemi NTMFS4833N-D.pdf Description: MOSFET N-CH 30V 16A/156A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 910mW (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 12 V
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NTMFS4834NT1G NTMFS4834NT1G onsemi ntmfs4834n-d.pdf Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 12 V
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NTMFS4835NT1G NTMFS4835NT1G onsemi ntmfs4835n-d.pdf Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V
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NTMFS4836NT1G NTMFS4836NT1G onsemi ntmfs4836n-d.pdf Description: MOSFET N-CH 30V 11A/90A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2677 pF @ 12 V
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NTMFS4836NT3G onsemi ntmfs4836n-d.pdf Description: MOSFET N-CH 30V 11A/90A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2677 pF @ 12 V
товару немає в наявності
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NTMFS4837NHT1G NTMFS4837NHT1G onsemi NTMFS4837NH.pdf Description: MOSFET N-CH 30V 10.2A/75A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 880mW (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3016 pF @ 12 V
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NTMFS4837NT1G NTMFS4837NT1G onsemi ntmfs4837n-d.pdf Description: MOSFET N-CH 30V 10A/74A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 880mW (Ta), 47.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 12 V
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NTMFS4839NHT1G NTMFS4839NHT1G onsemi NTMFS4839NH.pdf Description: MOSFET N-CH 30V 9.5A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2354 pF @ 12 V
товару немає в наявності
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NTMS4816NR2G NTMS4816NR2G onsemi ntms4816n-d.pdf Description: MOSFET N-CH 30V 6.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
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NTR4003NT1G NTR4003NT1G onsemi ntr4003n-d.pdf Description: MOSFET N-CH 30V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
на замовлення 207000 шт:
термін постачання 21-31 дні (днів)
3000+3.74 грн
6000+3.24 грн
9000+2.67 грн
15000+2.49 грн
21000+2.32 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTR4003NT3G NTR4003NT3G onsemi ntr4003n-d.pdf Description: MOSFET N-CH 30V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
на замовлення 200000 шт:
термін постачання 21-31 дні (днів)
10000+4.08 грн
20000+3.58 грн
30000+3.41 грн
50000+3.01 грн
70000+2.90 грн
100000+2.80 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
NTUD3127CT5G onsemi ntud3127c-d.pdf Description: MOSFET N/P-CH 20V 0.16A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 160mA, 140mA
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
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NTZD5110NT1G NTZD5110NT1G onsemi ntzd5110n-d.pdf Description: MOSFET 2N-CH 60V 0.294A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 294mA
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
4000+6.39 грн
8000+5.59 грн
12000+5.30 грн
Мінімальне замовлення: 4000
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NTZD5110NT5G NTZD5110NT5G onsemi ntzd5110n-d.pdf Description: MOSFET 2N-CH 60V 0.294A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 294mA
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
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NUF2450MUT2G NUF2450MUT2G onsemi nuf2450-d.pdf Description: FILTER LC(PI) 2.3NH/240PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 2.3nH, C = 240pF
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 800MHz ~ 5GHz
Filter Order: 3rd
Applications: Audio
Technology: LC (Pi)
Center / Cutoff Frequency: 20MHz (Cutoff)
Resistance - Channel (Ohms): 1.3
ESD Protection: Yes
Number of Channels: 2
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NUF3102MUTAG NUF3102MUTAG onsemi nuf3102mu-d.pdf Description: FILTER RC(PI) 150MHZ ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohm, 100Ohm, C = 13pF
Height: 0.022" (0.55mm)
Attenuation Value: -25dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 150MHz (Cutoff)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 3
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
3000+27.52 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NUF4001MUT2G NUF4001MUT2G onsemi nuf4001mu-d.pdf Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 13pF
Height: 0.022" (0.55mm)
Attenuation Value: -25dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 150MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 4
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NUF4211MNT1G NUF4211MNT1G onsemi nuf4211mn-d.pdf Description: FILTER RC(PI) 100 OHM/8.5PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 8.5pF
Height: 0.039" (1.00mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+22.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NUF6005MUT2G NUF6005MUT2G onsemi nuf6005mu-d.pdf Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 10pF
Height: 0.022" (0.55mm)
Attenuation Value: -25dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 185MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
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NUF6010MUT2G NUF6010MUT2G onsemi nuf6010mu-d.pdf Description: FILTER RC(PI) 100 OHM/7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.022" (0.55mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+13.66 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NUF6107MNTBG NUF6107MNTBG onsemi nuf6107mn-d.pdf Description: FILTER RC(PI) 100 OHM/30PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 30pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
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NUF6400MNTBG NUF6400MNTBG onsemi nuf6400mn-d.pdf Description: FILTER RC(PI) 100 OHMSESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 50pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 800MHz ~ 2.4GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 35MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 20 mA
на замовлення 55500 шт:
термін постачання 21-31 дні (днів)
3000+18.87 грн
6000+17.27 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NUF6410MNT1G NUF6410MNT1G onsemi nuf6410mn-d.pdf Description: FILTER RC(PI) 100 OHM/7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.039" (1.00mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+19.56 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NUF8000MUT2G NUF8000MUT2G onsemi nuf8000mu-d.pdf Description: FILTER RC(PI) 100 OHM/15PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.138" L x 0.047" W (3.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 15pF
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 95MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 8
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NUF8010MUT2G NUF8010MUT2G onsemi NUF8010MU.pdf Description: FILTER RC(PI) 100 OHM/7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.138" L x 0.047" W (3.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.022" (0.55mm)
Attenuation Value: -20dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 215MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 8
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NUP1105LT3G NUP1105LT3G onsemi nup1105l-d.pdf Description: TVS DIODE 24VWM 44VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
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NUP4004M5T1G NUP4004M5T1G onsemi nup4004m5-d.pdf Description: TVS DIODE 5VWM 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 5-TSOP
Bidirectional Channels: 4
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+30.57 грн
6000+28.04 грн
9000+26.75 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NUP412VP5T5G NUP412VP5T5G onsemi nup412vp5-d.pdf Description: TVS DIODE 9VWM SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOT-953
Unidirectional Channels: 4
Voltage - Breakdown (Min): 11.4V
Power - Peak Pulse: 18W
Power Line Protection: Yes
Grade: Automotive
Qualification: AEC-Q101
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NUP4201DR2G NUP4201DR2G onsemi nup4201dr2-d.pdf Description: TVS DIODE 5VWM 25VC 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 500W
Power Line Protection: Yes
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+39.61 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NTGD4161PT1G ntgd4161p-d.pdf
NTGD4161PT1G
Виробник: onsemi
Description: MOSFET 2P-CH 30V 1.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
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NTGS3130NT1G ntgs3130n-d.pdf
NTGS3130NT1G
Виробник: onsemi
Description: MOSFET N-CH 20V 4.23A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
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NTGS3136PT1G ntgs3136p-d.pdf
NTGS3136PT1G
Виробник: onsemi
Description: MOSFET P-CH 20V 3.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1901 pF @ 10 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+29.76 грн
6000+26.68 грн
15000+25.69 грн
30000+23.27 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTGS3441BT1G ntgs3441b-d.pdf
NTGS3441BT1G
Виробник: onsemi
Description: MOSFET P-CH 20V 2.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
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NTGS3441PT1G ntgs3441p-d.pdf
NTGS3441PT1G
Виробник: onsemi
Description: MOSFET P-CH 20V 1.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 4.5V
Power Dissipation (Max): 510mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 15 V
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NTGS3443BT1G ntgs3443b-d.pdf
NTGS3443BT1G
Виробник: onsemi
Description: MOSFET P-CH 20V 2.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 819 pF @ 10 V
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NTGS3443T2G ntgs3443t1-d.pdf
NTGS3443T2G
Виробник: onsemi
Description: MOSFET P-CH 20V 2.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 5 V
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NTGS3447PT1G ntgs3447p-d.pdf
NTGS3447PT1G
Виробник: onsemi
Description: MOSFET P-CH 12V 3.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 6 V
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NTGS4111PT2G ntgs4111p-d.pdf
NTGS4111PT2G
Виробник: onsemi
Description: MOSFET P-CH 30V 2.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
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NTHD3133PFT1G nthd3133pf-d.pdf
NTHD3133PFT1G
Виробник: onsemi
Description: MOSFET P-CH 20V 3.2A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
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NTHD3133PFT3G nthd3133pf-d.pdf
NTHD3133PFT3G
Виробник: onsemi
Description: MOSFET P-CH 20V 3.2A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
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NTHD4102PT3G nthd4102p-d.pdf
NTHD4102PT3G
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.9A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
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NTHS4166NT1G nths4166n-d.pdf
NTHS4166NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 4.9A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
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NTJD4158CT2G ntjd4158c-d.pdf
NTJD4158CT2G
Виробник: onsemi
Description: MOSFET N/P-CH 30V/20V 0.25A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
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NTJS4160NT1G ntjs4160n-d.pdf
NTJS4160NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 1.8A SC88/SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
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NTK3139PT1G ntk3139p-d.pdf
NTK3139PT1G
Виробник: onsemi
Description: MOSFET P-CH 20V 660MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+7.34 грн
8000+6.31 грн
12000+6.12 грн
20000+5.40 грн
28000+5.20 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
NTK3139PT5G ntk3139p-d.pdf
NTK3139PT5G
Виробник: onsemi
Description: MOSFET P-CH 20V 660MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-723
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
на замовлення 14100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+6.09 грн
Мінімальне замовлення: 8000
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NTLJD3115PTAG ntljd3115p-d.pdf
NTLJD3115PTAG
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
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NTLJD3119CTAG ntljd3119c-d.pdf
NTLJD3119CTAG
Виробник: onsemi
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
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NTLJD3119CTBG ntljd3119c-d.pdf
NTLJD3119CTBG
Виробник: onsemi
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+24.16 грн
6000+21.54 грн
9000+20.66 грн
15000+18.73 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTLJF3117PT1G ntljf3117p-d.pdf
NTLJF3117PT1G
Виробник: onsemi
Description: MOSFET P-CH 20V 2.3A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.67 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTLJF3117PTAG ntljf3117p-d.pdf
NTLJF3117PTAG
Виробник: onsemi
Description: MOSFET P-CH 20V 2.3A 6WDFN
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NTLJF3118NTAG ntljf3118n-d.pdf
NTLJF3118NTAG
Виробник: onsemi
Description: MOSFET N-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 10 V
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NTLJF3118NTBG ntljf3118n-d.pdf
NTLJF3118NTBG
Виробник: onsemi
Description: MOSFET N-CH 20V 2.6A 6WDFN
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NTLJS2103PTAG ntljs2103p-d.pdf
NTLJS2103PTAG
Виробник: onsemi
Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
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NTLJS2103PTBG ntljs2103p-d.pdf
NTLJS2103PTBG
Виробник: onsemi
Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+15.65 грн
6000+15.00 грн
9000+14.82 грн
15000+13.20 грн
21000+12.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTLJS4114NT1G ntljs4114n-d.pdf
NTLJS4114NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 3.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
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NTMD4840NR2G ntmd4840n-d.pdf
NTMD4840NR2G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 680mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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NTMFS4744NT1G ntmfs4744n-d.pdf
NTMFS4744NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 7A 5DFN
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NTMFS4744NT3G ntmfs4744n-d.pdf
NTMFS4744NT3G
Виробник: onsemi
Description: MOSFET N-CH 30V 7A 5DFN
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NTMFS4833NT1G NTMFS4833N-D.pdf
NTMFS4833NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 16A/156A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 910mW (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 12 V
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NTMFS4833NT3G NTMFS4833N-D.pdf
NTMFS4833NT3G
Виробник: onsemi
Description: MOSFET N-CH 30V 16A/156A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 910mW (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 12 V
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NTMFS4834NT1G ntmfs4834n-d.pdf
NTMFS4834NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 12 V
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NTMFS4835NT1G ntmfs4835n-d.pdf
NTMFS4835NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V
товару немає в наявності
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NTMFS4836NT1G ntmfs4836n-d.pdf
NTMFS4836NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 11A/90A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2677 pF @ 12 V
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NTMFS4836NT3G ntmfs4836n-d.pdf
Виробник: onsemi
Description: MOSFET N-CH 30V 11A/90A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2677 pF @ 12 V
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NTMFS4837NHT1G NTMFS4837NH.pdf
NTMFS4837NHT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 10.2A/75A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 880mW (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3016 pF @ 12 V
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NTMFS4837NT1G ntmfs4837n-d.pdf
NTMFS4837NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 10A/74A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 880mW (Ta), 47.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 12 V
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NTMFS4839NHT1G NTMFS4839NH.pdf
NTMFS4839NHT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 9.5A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2354 pF @ 12 V
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NTMS4816NR2G ntms4816n-d.pdf
NTMS4816NR2G
Виробник: onsemi
Description: MOSFET N-CH 30V 6.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
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NTR4003NT1G ntr4003n-d.pdf
NTR4003NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
на замовлення 207000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.74 грн
6000+3.24 грн
9000+2.67 грн
15000+2.49 грн
21000+2.32 грн
Мінімальне замовлення: 3000
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NTR4003NT3G ntr4003n-d.pdf
NTR4003NT3G
Виробник: onsemi
Description: MOSFET N-CH 30V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
на замовлення 200000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+4.08 грн
20000+3.58 грн
30000+3.41 грн
50000+3.01 грн
70000+2.90 грн
100000+2.80 грн
Мінімальне замовлення: 10000
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NTUD3127CT5G ntud3127c-d.pdf
Виробник: onsemi
Description: MOSFET N/P-CH 20V 0.16A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 160mA, 140mA
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
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NTZD5110NT1G ntzd5110n-d.pdf
NTZD5110NT1G
Виробник: onsemi
Description: MOSFET 2N-CH 60V 0.294A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 294mA
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+6.39 грн
8000+5.59 грн
12000+5.30 грн
Мінімальне замовлення: 4000
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NTZD5110NT5G ntzd5110n-d.pdf
NTZD5110NT5G
Виробник: onsemi
Description: MOSFET 2N-CH 60V 0.294A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 294mA
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
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NUF2450MUT2G nuf2450-d.pdf
NUF2450MUT2G
Виробник: onsemi
Description: FILTER LC(PI) 2.3NH/240PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 2.3nH, C = 240pF
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 800MHz ~ 5GHz
Filter Order: 3rd
Applications: Audio
Technology: LC (Pi)
Center / Cutoff Frequency: 20MHz (Cutoff)
Resistance - Channel (Ohms): 1.3
ESD Protection: Yes
Number of Channels: 2
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NUF3102MUTAG nuf3102mu-d.pdf
NUF3102MUTAG
Виробник: onsemi
Description: FILTER RC(PI) 150MHZ ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohm, 100Ohm, C = 13pF
Height: 0.022" (0.55mm)
Attenuation Value: -25dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 150MHz (Cutoff)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 3
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+27.52 грн
Мінімальне замовлення: 3000
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NUF4001MUT2G nuf4001mu-d.pdf
NUF4001MUT2G
Виробник: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 13pF
Height: 0.022" (0.55mm)
Attenuation Value: -25dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 150MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 4
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NUF4211MNT1G nuf4211mn-d.pdf
NUF4211MNT1G
Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/8.5PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 8.5pF
Height: 0.039" (1.00mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+22.81 грн
Мінімальне замовлення: 3000
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NUF6005MUT2G nuf6005mu-d.pdf
NUF6005MUT2G
Виробник: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 10pF
Height: 0.022" (0.55mm)
Attenuation Value: -25dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 185MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
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NUF6010MUT2G nuf6010mu-d.pdf
NUF6010MUT2G
Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.022" (0.55mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.66 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NUF6107MNTBG nuf6107mn-d.pdf
NUF6107MNTBG
Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/30PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 30pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
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NUF6400MNTBG nuf6400mn-d.pdf
NUF6400MNTBG
Виробник: onsemi
Description: FILTER RC(PI) 100 OHMSESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 50pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 800MHz ~ 2.4GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 35MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 20 mA
на замовлення 55500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+18.87 грн
6000+17.27 грн
Мінімальне замовлення: 3000
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NUF6410MNT1G nuf6410mn-d.pdf
NUF6410MNT1G
Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.039" (1.00mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+19.56 грн
Мінімальне замовлення: 3000
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NUF8000MUT2G nuf8000mu-d.pdf
NUF8000MUT2G
Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/15PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.138" L x 0.047" W (3.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 15pF
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 95MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 8
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NUF8010MUT2G NUF8010MU.pdf
NUF8010MUT2G
Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.138" L x 0.047" W (3.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.022" (0.55mm)
Attenuation Value: -20dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 215MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 8
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NUP1105LT3G nup1105l-d.pdf
NUP1105LT3G
Виробник: onsemi
Description: TVS DIODE 24VWM 44VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
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NUP4004M5T1G nup4004m5-d.pdf
NUP4004M5T1G
Виробник: onsemi
Description: TVS DIODE 5VWM 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 5-TSOP
Bidirectional Channels: 4
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+30.57 грн
6000+28.04 грн
9000+26.75 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NUP412VP5T5G nup412vp5-d.pdf
NUP412VP5T5G
Виробник: onsemi
Description: TVS DIODE 9VWM SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOT-953
Unidirectional Channels: 4
Voltage - Breakdown (Min): 11.4V
Power - Peak Pulse: 18W
Power Line Protection: Yes
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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NUP4201DR2G nup4201dr2-d.pdf
NUP4201DR2G
Виробник: onsemi
Description: TVS DIODE 5VWM 25VC 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 500W
Power Line Protection: Yes
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+39.61 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
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