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MMBT6427LT1 MMBT6427LT1 onsemi mmbt6427lt1-d.pdf Description: TRANS SS DARL NPN 40V SOT23
Packaging: Cut Tape (CT)
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MMBT6428LT1 MMBT6428LT1 onsemi MMBT6428LT1-D.pdf Description: TRANS SS NPN 50V LN SOT23
Packaging: Cut Tape (CT)
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MMBT6429LT1 MMBT6429LT1 onsemi mmbt6428lt1-d.pdf Description: TRANS SS NPN 45V LN SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
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MMBF170LT1 MMBF170LT1 onsemi mmbf170lt1-d.pdf Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
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MPS8098RLRA MPS8098RLRA onsemi MPS809x, 859x Rev5.pdf Description: TRANS NPN 60V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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MPS8099RLRA MPS8099RLRA onsemi mps8098-d.pdf Description: TRANS NPN SS GP 80V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPS8598RLRA MPS8598RLRA onsemi MPS809x,%20859x%20Rev5.pdf Description: TRANS PNP 60V 0.5A TO92
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MPS8599RLRA MPS8599RLRA onsemi mps8098-d.pdf Description: TRANS PNP SS GP 80V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPS751RLRA MPS751RLRA onsemi mps650-d.pdf Description: TRANS PNP SS 60V HI CURRENT TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBT918LT1 MMBT918LT1 onsemi mmbt918lt1-d.pdf Description: TRANS SS VHF NPN 15V SOT23
Packaging: Cut Tape (CT)
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2N6520RLRA 2N6520RLRA onsemi 2N6515%20Rev4.pdf Description: TRANS PNP 350V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
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MMBT8099LT1 MMBT8099LT1 onsemi mmbt8099lt1-d.pdf Description: TRANS NPN 80V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 225 mW
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MPSA44RLRA MPSA44RLRA onsemi mpsa44-d.pdf Description: TRANS NPN SS GP 400V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPSW06RLRA MPSW06RLRA onsemi mpsw05-d.pdf Description: TRANS NPN SS GP 1W 80V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPSW42RLRA MPSW42RLRA onsemi mpsw42-d.pdf Description: TRANS NPN SS 1W 300V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBF0201NLT1 MMBF0201NLT1 onsemi mmbf0201nlt1-d.pdf Description: MOSFET N-CH 20V 300MA SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
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MMBF2201NT1 MMBF2201NT1 onsemi mmbf2201nt1-d.pdf Description: MOSFET N-CH 20V 300MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
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PZTA42T1 PZTA42T1 onsemi PZTA42T1-D.pdf Description: TRANS NPN 300V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
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PZTA92T1 PZTA92T1 onsemi PZTA92T1-D.pdf Description: TRANS SS PNP 500MA 300V SOT223
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBF4391LT1 MMBF4391LT1 onsemi mmbf4391lt1-d.pdf Description: JFET SS N-CHAN 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBF4392LT1 MMBF4392LT1 onsemi mmbf4391lt1-d.pdf Description: JFET SS N-CHAN 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBF4393LT1 MMBF4393LT1 onsemi mmbf4391lt1-d.pdf Description: JFET N-CH 30V 0.225W SOT23
Packaging: Cut Tape (CT)
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MMBF4416LT1 MMBF4416LT1 onsemi mmbf4416lt1-d.pdf Description: MOSFET SS N-CHAN VHF 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBF5457LT1 MMBF5457LT1 onsemi mmbf5457lt1-d.pdf Description: JFET N-CH 25V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
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MMBF5460LT1 MMBF5460LT1 onsemi mmbf5460lt1-d.pdf Description: JFET P-CH 40V 0.225W SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBF5484LT1 MMBF5484LT1 onsemi mmbf5484lt1-d.pdf Description: SS N-CHAN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBFJ175LT1 MMBFJ175LT1 onsemi mmbfj175lt1-d.pdf Description: SS P-CHAN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBFJ177LT1 MMBFJ177LT1 onsemi MMBFJ177LT1G%2C%20SMMBFJ177LT1G.pdf Description: SS P-CHAN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBFJ309LT1 MMBFJ309LT1 onsemi mmbfj309lt1-d.pdf Description: SS N-CHAN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBFJ310LT1 MMBFJ310LT1 onsemi MMBFJ%2CSMMBFJ3%2809%2C10%29L.pdf Description: RF MOSFET N-CH JFET 10V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBFU310LT1 MMBFU310LT1 onsemi mmbfu310lt1-d.pdf Description: SS N-CHAN 25V SOT23
Packaging: Cut Tape (CT)
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NTGS3446T1 NTGS3446T1 onsemi ntgs3446-d.pdf Description: MOSFET N-CH 20V 2.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V
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NTF3055-100T1 NTF3055-100T1 onsemi ntf3055-100-d.pdf Description: MOSFET N-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
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MMJT9435T1 MMJT9435T1 onsemi mmjt9435-d.pdf Description: TRANS PNP 30V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3 W
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NTD12N10T4 NTD12N10T4 onsemi ntd12n10-d.pdf Description: MOSFET N-CH 100V 12A DPAK
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MMDF2P02HDR2 MMDF2P02HDR2 onsemi mmdf2p02hd-d.pdf Description: MOSFET 2P-CH 20V 3.3A 8-SOIC
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MMPQ2222AR1 MMPQ2222AR1 onsemi mmpq2222a-d.pdf Description: TRANS 4NPN QUAD 40V 500MA 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 350MHz
Supplier Device Package: 16-SOIC
Part Status: Obsolete
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NTB85N03T4 NTB85N03T4 onsemi ntp85n03-d.pdf Description: MOSFET N-CH 28V 85A D2PAK
Packaging: Cut Tape (CT)
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PN2222 PN2222 onsemi DS_488_PN2222.pdf Description: TRANS NPN 30V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPS3638A MPS3638A onsemi mps3638a-d.pdf Description: TRANS PNP 25V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2N5088 2N5088 onsemi 2N5088%2C%205089%20Rev3.pdf description Description: TRANS NPN 30V 0.05A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N5089 2N5089 onsemi 2N5088%2C%205089%20Rev3.pdf Description: TRANS NPN 25V 0.05A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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MPS5179 MPS5179 onsemi MMBT5179.pdf Description: RF TRANS NPN 12V 2GHZ TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Frequency - Transition: 2GHz
Supplier Device Package: TO-92 (TO-226)
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1N6287A 1N6287A onsemi 1N6267A%20Series%20Rev6.pdf Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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MJE270 MJE270 onsemi mje270-d.pdf Description: TRANS NPN DARL 100V 2A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
Frequency - Transition: 6MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
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MJE371 MJE371 onsemi mje371-d.pdf Description: TRANS PNP 40V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 1V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W
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MJE181 MJE181 onsemi mje171-d.pdf Description: TRANS NPN 60V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 12.5 W
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MJE13003 MJE13003 onsemi mje13003-d.pdf description Description: TRANS NPN 400V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 500mA, 2V
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.4 W
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MJE170 MJE170 onsemi mje171-d.pdf Description: TRANS PNP 40V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 12.5 W
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MJE171 MJE171 onsemi mje171-d.pdf Description: TRANS PNP 60V 3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 12.5 W
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MJE803 MJE803 onsemi mje700-d.pdf Description: TRANS NPN DARL 80V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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VN2222LL VN2222LL onsemi VN2222LL%20Rev3.pdf Description: MOSFET N-CH 60V 150MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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MJ11016 MJ11016 onsemi mj11012-d.pdf Description: TRANS NPN DARL 120V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
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mj11032 mj11032 onsemi mj11028-d.pdf Description: TRANS NPN DARL 120V 50A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 W
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MJH11021 MJH11021 onsemi mjh11017-d.pdf Description: TRANS PNP DARL 250V 15A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
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MJH11022 MJH11022 onsemi mjh11017-d.pdf Description: TRANS NPN DARL 250V 15A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
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MJF15031 MJF15031 onsemi mjf15030-d.pdf Description: TRANS PNP 150V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
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MJH11017 MJH11017 onsemi mjh11017-d.pdf Description: TRANS PNP DARL 150V 15A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 150 W
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MJH11020 MJH11020 onsemi mjh11017-d.pdf Description: TRANS NPN DARL 200V 15A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 W
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MJH11019 MJH11019 onsemi mjh11017-d.pdf Description: TRANS PNP DARL 200V 15A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 W
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MMBT6427LT1 mmbt6427lt1-d.pdf
MMBT6427LT1
Виробник: onsemi
Description: TRANS SS DARL NPN 40V SOT23
Packaging: Cut Tape (CT)
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MMBT6428LT1 MMBT6428LT1-D.pdf
MMBT6428LT1
Виробник: onsemi
Description: TRANS SS NPN 50V LN SOT23
Packaging: Cut Tape (CT)
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MMBT6429LT1 mmbt6428lt1-d.pdf
MMBT6429LT1
Виробник: onsemi
Description: TRANS SS NPN 45V LN SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
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MMBF170LT1 mmbf170lt1-d.pdf
MMBF170LT1
Виробник: onsemi
Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
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MPS8098RLRA MPS809x, 859x Rev5.pdf
MPS8098RLRA
Виробник: onsemi
Description: TRANS NPN 60V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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MPS8099RLRA mps8098-d.pdf
MPS8099RLRA
Виробник: onsemi
Description: TRANS NPN SS GP 80V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPS8598RLRA MPS809x,%20859x%20Rev5.pdf
MPS8598RLRA
Виробник: onsemi
Description: TRANS PNP 60V 0.5A TO92
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MPS8599RLRA mps8098-d.pdf
MPS8599RLRA
Виробник: onsemi
Description: TRANS PNP SS GP 80V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPS751RLRA mps650-d.pdf
MPS751RLRA
Виробник: onsemi
Description: TRANS PNP SS 60V HI CURRENT TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBT918LT1 mmbt918lt1-d.pdf
MMBT918LT1
Виробник: onsemi
Description: TRANS SS VHF NPN 15V SOT23
Packaging: Cut Tape (CT)
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2N6520RLRA 2N6515%20Rev4.pdf
2N6520RLRA
Виробник: onsemi
Description: TRANS PNP 350V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
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MMBT8099LT1 mmbt8099lt1-d.pdf
MMBT8099LT1
Виробник: onsemi
Description: TRANS NPN 80V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 225 mW
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MPSA44RLRA mpsa44-d.pdf
MPSA44RLRA
Виробник: onsemi
Description: TRANS NPN SS GP 400V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPSW06RLRA mpsw05-d.pdf
MPSW06RLRA
Виробник: onsemi
Description: TRANS NPN SS GP 1W 80V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MPSW42RLRA mpsw42-d.pdf
MPSW42RLRA
Виробник: onsemi
Description: TRANS NPN SS 1W 300V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBF0201NLT1 mmbf0201nlt1-d.pdf
MMBF0201NLT1
Виробник: onsemi
Description: MOSFET N-CH 20V 300MA SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
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MMBF2201NT1 mmbf2201nt1-d.pdf
MMBF2201NT1
Виробник: onsemi
Description: MOSFET N-CH 20V 300MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
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PZTA42T1 PZTA42T1-D.pdf
PZTA42T1
Виробник: onsemi
Description: TRANS NPN 300V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
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PZTA92T1 PZTA92T1-D.pdf
PZTA92T1
Виробник: onsemi
Description: TRANS SS PNP 500MA 300V SOT223
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBF4391LT1 mmbf4391lt1-d.pdf
MMBF4391LT1
Виробник: onsemi
Description: JFET SS N-CHAN 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBF4392LT1 mmbf4391lt1-d.pdf
MMBF4392LT1
Виробник: onsemi
Description: JFET SS N-CHAN 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBF4393LT1 mmbf4391lt1-d.pdf
MMBF4393LT1
Виробник: onsemi
Description: JFET N-CH 30V 0.225W SOT23
Packaging: Cut Tape (CT)
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MMBF4416LT1 mmbf4416lt1-d.pdf
MMBF4416LT1
Виробник: onsemi
Description: MOSFET SS N-CHAN VHF 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBF5457LT1 mmbf5457lt1-d.pdf
MMBF5457LT1
Виробник: onsemi
Description: JFET N-CH 25V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
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MMBF5460LT1 mmbf5460lt1-d.pdf
MMBF5460LT1
Виробник: onsemi
Description: JFET P-CH 40V 0.225W SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBF5484LT1 mmbf5484lt1-d.pdf
MMBF5484LT1
Виробник: onsemi
Description: SS N-CHAN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBFJ175LT1 mmbfj175lt1-d.pdf
MMBFJ175LT1
Виробник: onsemi
Description: SS P-CHAN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBFJ177LT1 MMBFJ177LT1G%2C%20SMMBFJ177LT1G.pdf
MMBFJ177LT1
Виробник: onsemi
Description: SS P-CHAN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBFJ309LT1 mmbfj309lt1-d.pdf
MMBFJ309LT1
Виробник: onsemi
Description: SS N-CHAN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBFJ310LT1 MMBFJ%2CSMMBFJ3%2809%2C10%29L.pdf
MMBFJ310LT1
Виробник: onsemi
Description: RF MOSFET N-CH JFET 10V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
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MMBFU310LT1 mmbfu310lt1-d.pdf
MMBFU310LT1
Виробник: onsemi
Description: SS N-CHAN 25V SOT23
Packaging: Cut Tape (CT)
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NTGS3446T1 ntgs3446-d.pdf
NTGS3446T1
Виробник: onsemi
Description: MOSFET N-CH 20V 2.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V
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NTF3055-100T1 ntf3055-100-d.pdf
NTF3055-100T1
Виробник: onsemi
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
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MMJT9435T1 mmjt9435-d.pdf
MMJT9435T1
Виробник: onsemi
Description: TRANS PNP 30V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3 W
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NTD12N10T4 ntd12n10-d.pdf
NTD12N10T4
Виробник: onsemi
Description: MOSFET N-CH 100V 12A DPAK
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MMDF2P02HDR2 mmdf2p02hd-d.pdf
MMDF2P02HDR2
Виробник: onsemi
Description: MOSFET 2P-CH 20V 3.3A 8-SOIC
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MMPQ2222AR1 mmpq2222a-d.pdf
MMPQ2222AR1
Виробник: onsemi
Description: TRANS 4NPN QUAD 40V 500MA 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 350MHz
Supplier Device Package: 16-SOIC
Part Status: Obsolete
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NTB85N03T4 ntp85n03-d.pdf
NTB85N03T4
Виробник: onsemi
Description: MOSFET N-CH 28V 85A D2PAK
Packaging: Cut Tape (CT)
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PN2222 DS_488_PN2222.pdf
PN2222
Виробник: onsemi
Description: TRANS NPN 30V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPS3638A mps3638a-d.pdf
MPS3638A
Виробник: onsemi
Description: TRANS PNP 25V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2N5088 description 2N5088%2C%205089%20Rev3.pdf
2N5088
Виробник: onsemi
Description: TRANS NPN 30V 0.05A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N5089 2N5088%2C%205089%20Rev3.pdf
2N5089
Виробник: onsemi
Description: TRANS NPN 25V 0.05A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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MPS5179 MMBT5179.pdf
MPS5179
Виробник: onsemi
Description: RF TRANS NPN 12V 2GHZ TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Frequency - Transition: 2GHz
Supplier Device Package: TO-92 (TO-226)
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1N6287A 1N6267A%20Series%20Rev6.pdf
1N6287A
Виробник: onsemi
Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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MJE270 mje270-d.pdf
MJE270
Виробник: onsemi
Description: TRANS NPN DARL 100V 2A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
Frequency - Transition: 6MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
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MJE371 mje371-d.pdf
MJE371
Виробник: onsemi
Description: TRANS PNP 40V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 1V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W
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MJE181 mje171-d.pdf
MJE181
Виробник: onsemi
Description: TRANS NPN 60V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 12.5 W
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MJE13003 description mje13003-d.pdf
MJE13003
Виробник: onsemi
Description: TRANS NPN 400V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 500mA, 2V
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.4 W
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MJE170 mje171-d.pdf
MJE170
Виробник: onsemi
Description: TRANS PNP 40V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 12.5 W
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MJE171 mje171-d.pdf
MJE171
Виробник: onsemi
Description: TRANS PNP 60V 3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 12.5 W
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MJE803 mje700-d.pdf
MJE803
Виробник: onsemi
Description: TRANS NPN DARL 80V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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VN2222LL VN2222LL%20Rev3.pdf
VN2222LL
Виробник: onsemi
Description: MOSFET N-CH 60V 150MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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MJ11016 mj11012-d.pdf
MJ11016
Виробник: onsemi
Description: TRANS NPN DARL 120V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
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mj11032 mj11028-d.pdf
mj11032
Виробник: onsemi
Description: TRANS NPN DARL 120V 50A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 W
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MJH11021 mjh11017-d.pdf
MJH11021
Виробник: onsemi
Description: TRANS PNP DARL 250V 15A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
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MJH11022 mjh11017-d.pdf
MJH11022
Виробник: onsemi
Description: TRANS NPN DARL 250V 15A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
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MJF15031 mjf15030-d.pdf
MJF15031
Виробник: onsemi
Description: TRANS PNP 150V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
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MJH11017 mjh11017-d.pdf
MJH11017
Виробник: onsemi
Description: TRANS PNP DARL 150V 15A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 150 W
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MJH11020 mjh11017-d.pdf
MJH11020
Виробник: onsemi
Description: TRANS NPN DARL 200V 15A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 W
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MJH11019 mjh11017-d.pdf
MJH11019
Виробник: onsemi
Description: TRANS PNP DARL 200V 15A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 W
товару немає в наявності
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