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MJD41CT4 MJD41CT4 onsemi mjd41c-d.pdf Description: TRANS NPN 100V 6A DPAK
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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MJD42CT4 MJD42CT4 onsemi mjd41c-d.pdf Description: TRANS PNP 100V 6A DPAK
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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MJD50T4 MJD50T4 onsemi mjd47-d.pdf Description: TRANS NPN 400V 1A DPAK
Power - Max: 15 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: DPAK
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Current - Collector Cutoff (Max): 200µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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MMUN2212LT1 MMUN2212LT1 onsemi MMUN22xxLTx_Series.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Resistors Included: R1 and R2
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MMUN2213LT1 MMUN2213LT1 onsemi MMUN22xxLTx_Series.pdf Description: TRANS BRT NPN 100MA 50V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
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MMUN2216LT1 MMUN2216LT1 onsemi MMUN22xxLTx_Series.pdf Description: TRANS BRT NPN 100MA 50V SOT23
Packaging: Cut Tape (CT)
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MMUN2232LT1 MMUN2232LT1 onsemi MMUN22xxLTx_Series.pdf Description: TRANS BRT NPN 100MA 50V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
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MSD601-RT1 MSD601-RT1 onsemi msd601-rt1-d.pdf Description: TRANS NPN 50V 0.1A SC59
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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MUN2111T1 MUN2111T1 onsemi MUN2111T1%20Series.pdf Description: TRANS BRT PNP 100MA 50V SC59
Packaging: Cut Tape (CT)
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MUN2214T1 MUN2214T1 onsemi MUN2211T1%20Series.pdf Description: TRANS BRT NPN 100MA 50V SC59
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 338 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
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MUN5211DW1T1 MUN5211DW1T1 onsemi MUN5211DW1T1%20Series.pdf Description: TRANS 2NPN PREBIAS 0.25W SOT363
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
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MUN5214T1 MUN5214T1 onsemi MUN5211T1_Series.pdf Description: TRANS PREBIAS NPN 50V SC70-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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MUR180E MUR180E onsemi mur180e-d.pdf Description: DIODE STANDARD 800V 1A AXIAL
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
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MUR405 MUR405 onsemi mur420-d.pdf Description: DIODE GEN PURP 50V 4A AXIAL
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 4A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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MR2504 MR2504 onsemi mr2500-d.pdf Description: DIODE GP 400V 25A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 78.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 25A
Packaging: Bulk
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Microde Button
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MR2510 MR2510 onsemi mr2500-d.pdf Description: DIODE GP 1KV 25A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 78.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 25A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Microde Button
Packaging: Bulk
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MUR415 MUR415 onsemi mur420-d.pdf Description: DIODE STANDARD 150V 4A AXIAL
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 4A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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MUR480E MUR480E onsemi mur480e-d.pdf Description: DIODE STANDARD 800V 4A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 800 V
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1N6276A 1N6276A onsemi 1N6267A%20Series%20Rev6.pdf Description: TVS DIODE 13.6VWM 22.5VC AXIAL
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 22.5V
Voltage - Breakdown (Min): 15.2V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 13.6V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
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1N6277A 1N6277A onsemi 1N6267A%20Series%20Rev6.pdf Description: TVS DIODE 15.3VWM 25.2VC AXIAL
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 15.3V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
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1N6285A 1N6285A onsemi 1N6267A%20Series%20Rev6.pdf Description: TVS DIODE 33.3VWM 53.9VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 33.3V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
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1N6295A 1N6295A onsemi 1N6267A%20Series%20Rev6.pdf Description: TVS DIODE 85.5VWM 137VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 95V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 85.5V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
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MBRP20030CTL MBRP20030CTL onsemi mbrp20030ctl-d.pdf Description: DIODE MOD SCHOTT 30V POWERTAP II
Packaging: Tray
Package / Case: POWERTAP II
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: POWERTAP II
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
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MURP20040CT MURP20040CT onsemi murp20020ct-d.pdf Description: DIODE MOD GP 400V 100A POWERTAP2
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
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MURP20020CT MURP20020CT onsemi murp20020ct-d.pdf Description: DIODE MOD GP 300V 100A POWERTAP2
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
Current - Reverse Leakage @ Vr: 150 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 300 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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MBRP400100CTL MBRP400100CTL onsemi MBRP400100CTL%28Sept%2006%29-D.pdf Description: DIODE MOD SCHOT 100V POWERTAP II
Current - Reverse Leakage @ Vr: 6 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
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MBRP30060CT MBRP30060CT onsemi mbrp30060ct-d.pdf Description: DIODE MOD SCHOTT 60V POWERTAP II
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 60 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
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MURHB840CT MURHB840CT onsemi murhb840ct-d.pdf Description: DIODE ARRAY GP 400V 4A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 28 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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MBR16100CT MBR16100CT onsemi mbr16100ct-d.pdf Description: DIODE ARRAY SCHOT 100V 8A TO-220
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MBR2030CTL MBR2030CTL onsemi mbr2030ctl-d.pdf Description: DIODE ARRAY SCHOT 30V 10A TO-220
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MUR620CT MUR620CT onsemi mur620ct-d.pdf Description: DIODE ARRAY GP 200V 3A TO220AB
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MCR8N MCR8N onsemi MCR8NG.pdf Description: SCR 800V 8A TO220AB
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MUR1620CTR MUR1620CTR onsemi mur1620ctr-d.pdf Description: DIODE ARRAY GP 200V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MUR815 MUR815 onsemi mur820-d.pdf Description: DIODE GEN PURP 150V 8A TO220-2
Packaging: Tube
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
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MUR880E MUR880E onsemi mur8100e-d.pdf Description: DIODE STANDARD 800V 8A TO2202
Current - Reverse Leakage @ Vr: 25 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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MUR810 MUR810 onsemi mur820-d.pdf Description: DIODE STANDARD 100V 8A TO2202
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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MUR3060WT MUR3060WT onsemi mur3020wt-d.pdf Description: DIODE ARRAY GP 600V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MMSZ5266BT1 MMSZ5266BT1 onsemi SZ%2CMMSZ52zzzT1G_Series.pdf Description: DIODE ZENER 68V 500MW SOD123
Impedance (Max) (Zzt): 230 Ohms
Voltage - Zener (Nom) (Vz): 68 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
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MMSZ4687T1 MMSZ4687T1 onsemi mmsz4678t1-d.pdf Description: DIODE ZENER 4.3V 500MW SOD123
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: SOD-123
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Voltage - Zener (Nom) (Vz): 4.3 V
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MMSZ4686T1 MMSZ4686T1 onsemi mmsz4678t1-d.pdf Description: DIODE ZENER 3.9V 500MW SOD123
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMSZ4685T1 MMSZ4685T1 onsemi mmsz4678t1-d.pdf Description: DIODE ZENER 3.6V 500MW SOD123
Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMSZ4684T1 MMSZ4684T1 onsemi mmsz4678t1-d.pdf Description: DIODE ZENER 3.3V 500MW SOD123
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMSZ4681T1 MMSZ4681T1 onsemi mmsz4678t1-d.pdf Description: DIODE ZENER 2.4V 500MW SOD123
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 2.4 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMSZ5263BT1 MMSZ5263BT1 onsemi SZ%2CMMSZ52zzzT1G_Series.pdf Description: DIODE ZENER 56V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMSZ10T1 MMSZ10T1 onsemi mmsz2v4t1-d.pdf Description: DIODE ZENER 10V 500MW SOD123
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MURS105T3 MURS105T3 onsemi murs120t3-d.pdf Description: DIODE GEN PURP 50V 2A SMB
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MMBZ6V2ALT1 MMBZ6V2ALT1 onsemi mmbz5v6alt1-d.pdf Description: TVS DIODE 3VWM 8.7VC SOT23-3
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MMSZ6V8T1 MMSZ6V8T1 onsemi mmsz2v4t1-d.pdf Description: DIODE ZENER 6.8V 500MW SOD123
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMSZ4678T1 MMSZ4678T1 onsemi mmsz4678t1-d.pdf Description: DIODE ZENER 1.8V 500MW SOD123
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 1.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMBZ6V8ALT1 MMBZ6V8ALT1 onsemi mmbz5v6alt1-d.pdf Description: TVS DIODE 4.5VWM 9.6VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 9.6V
Power - Peak Pulse: 24W
Power Line Protection: No
Part Status: Obsolete
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MMSZ5264BT1 MMSZ5264BT1 onsemi SZ%2CMMSZ52zzzT1G_Series.pdf Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
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MURS260T3 MURS260T3 onsemi murs260t3-d.pdf Description: DIODE GEN PURP 600V 2A SMB
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MMSZ5262BT1 MMSZ5262BT1 onsemi SZ,MMSZ52zzzT1G_Series.pdf Description: DIODE ZENER 51V 500MW SOD123
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MR750RL MR750RL onsemi mr750-d.pdf Description: DIODE STD 50V 6A MICRODE BUTTON
Packaging: Tape & Reel (TR)
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MMSZ4688T1 MMSZ4688T1 onsemi mmsz4678t1-d.pdf Description: DIODE ZENER 4.7V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
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MUR1100ERL MUR1100ERL onsemi mur180e-d.pdf Description: DIODE STANDARD 1000V 1A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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MMSZ5225BT1 MMSZ5225BT1 onsemi SZ%2CMMSZ52zzzT1G_Series.pdf Description: DIODE ZENER 3V 500MW SOD123
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 29 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MR756RL MR756RL onsemi mr750-d.pdf Description: DIODE STD 600V 6A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Tape & Reel (TR)
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MR852RL MR852RL onsemi mr850-d.pdf Description: DIODE GEN PURP 200V 3A AXIAL
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
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MRA4007T3 MRA4007T3 onsemi mra4003t3-d.pdf Description: DIODE GEN PURP 1KV 1A SMA
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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MJD41CT4 mjd41c-d.pdf
MJD41CT4
Виробник: onsemi
Description: TRANS NPN 100V 6A DPAK
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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MJD42CT4 mjd41c-d.pdf
MJD42CT4
Виробник: onsemi
Description: TRANS PNP 100V 6A DPAK
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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MJD50T4 mjd47-d.pdf
MJD50T4
Виробник: onsemi
Description: TRANS NPN 400V 1A DPAK
Power - Max: 15 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: DPAK
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Current - Collector Cutoff (Max): 200µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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MMUN2212LT1 MMUN22xxLTx_Series.pdf
MMUN2212LT1
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Resistors Included: R1 and R2
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MMUN2213LT1 MMUN22xxLTx_Series.pdf
MMUN2213LT1
Виробник: onsemi
Description: TRANS BRT NPN 100MA 50V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
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MMUN2216LT1 MMUN22xxLTx_Series.pdf
MMUN2216LT1
Виробник: onsemi
Description: TRANS BRT NPN 100MA 50V SOT23
Packaging: Cut Tape (CT)
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MMUN2232LT1 MMUN22xxLTx_Series.pdf
MMUN2232LT1
Виробник: onsemi
Description: TRANS BRT NPN 100MA 50V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
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MSD601-RT1 msd601-rt1-d.pdf
MSD601-RT1
Виробник: onsemi
Description: TRANS NPN 50V 0.1A SC59
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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MUN2111T1 MUN2111T1%20Series.pdf
MUN2111T1
Виробник: onsemi
Description: TRANS BRT PNP 100MA 50V SC59
Packaging: Cut Tape (CT)
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MUN2214T1 MUN2211T1%20Series.pdf
MUN2214T1
Виробник: onsemi
Description: TRANS BRT NPN 100MA 50V SC59
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 338 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
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MUN5211DW1T1 MUN5211DW1T1%20Series.pdf
MUN5211DW1T1
Виробник: onsemi
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
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MUN5214T1 MUN5211T1_Series.pdf
MUN5214T1
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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MUR180E mur180e-d.pdf
MUR180E
Виробник: onsemi
Description: DIODE STANDARD 800V 1A AXIAL
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
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MUR405 mur420-d.pdf
MUR405
Виробник: onsemi
Description: DIODE GEN PURP 50V 4A AXIAL
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 4A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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MR2504 mr2500-d.pdf
MR2504
Виробник: onsemi
Description: DIODE GP 400V 25A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 78.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 25A
Packaging: Bulk
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Microde Button
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MR2510 mr2500-d.pdf
MR2510
Виробник: onsemi
Description: DIODE GP 1KV 25A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 78.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 25A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Microde Button
Packaging: Bulk
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MUR415 mur420-d.pdf
MUR415
Виробник: onsemi
Description: DIODE STANDARD 150V 4A AXIAL
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 4A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
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MUR480E mur480e-d.pdf
MUR480E
Виробник: onsemi
Description: DIODE STANDARD 800V 4A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 800 V
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1N6276A 1N6267A%20Series%20Rev6.pdf
1N6276A
Виробник: onsemi
Description: TVS DIODE 13.6VWM 22.5VC AXIAL
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 22.5V
Voltage - Breakdown (Min): 15.2V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 13.6V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
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1N6277A 1N6267A%20Series%20Rev6.pdf
1N6277A
Виробник: onsemi
Description: TVS DIODE 15.3VWM 25.2VC AXIAL
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 15.3V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
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1N6285A 1N6267A%20Series%20Rev6.pdf
1N6285A
Виробник: onsemi
Description: TVS DIODE 33.3VWM 53.9VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 33.3V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
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1N6295A 1N6267A%20Series%20Rev6.pdf
1N6295A
Виробник: onsemi
Description: TVS DIODE 85.5VWM 137VC AXIAL
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 95V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 85.5V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
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MBRP20030CTL mbrp20030ctl-d.pdf
MBRP20030CTL
Виробник: onsemi
Description: DIODE MOD SCHOTT 30V POWERTAP II
Packaging: Tray
Package / Case: POWERTAP II
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: POWERTAP II
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
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MURP20040CT murp20020ct-d.pdf
MURP20040CT
Виробник: onsemi
Description: DIODE MOD GP 400V 100A POWERTAP2
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 400 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
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MURP20020CT murp20020ct-d.pdf
MURP20020CT
Виробник: onsemi
Description: DIODE MOD GP 300V 100A POWERTAP2
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
Current - Reverse Leakage @ Vr: 150 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 300 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 100A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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MBRP400100CTL MBRP400100CTL%28Sept%2006%29-D.pdf
MBRP400100CTL
Виробник: onsemi
Description: DIODE MOD SCHOT 100V POWERTAP II
Current - Reverse Leakage @ Vr: 6 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 200 A
Voltage - DC Reverse (Vr) (Max): 100 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
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MBRP30060CT mbrp30060ct-d.pdf
MBRP30060CT
Виробник: onsemi
Description: DIODE MOD SCHOTT 60V POWERTAP II
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 150 A
Voltage - DC Reverse (Vr) (Max): 60 V
Supplier Device Package: POWERTAP II
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: POWERTAP II
Packaging: Tray
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MURHB840CT murhb840ct-d.pdf
MURHB840CT
Виробник: onsemi
Description: DIODE ARRAY GP 400V 4A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 28 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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MBR16100CT mbr16100ct-d.pdf
MBR16100CT
Виробник: onsemi
Description: DIODE ARRAY SCHOT 100V 8A TO-220
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MBR2030CTL mbr2030ctl-d.pdf
MBR2030CTL
Виробник: onsemi
Description: DIODE ARRAY SCHOT 30V 10A TO-220
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MUR620CT mur620ct-d.pdf
MUR620CT
Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A TO220AB
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MCR8N MCR8NG.pdf
MCR8N
Виробник: onsemi
Description: SCR 800V 8A TO220AB
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MUR1620CTR mur1620ctr-d.pdf
MUR1620CTR
Виробник: onsemi
Description: DIODE ARRAY GP 200V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MUR815 mur820-d.pdf
MUR815
Виробник: onsemi
Description: DIODE GEN PURP 150V 8A TO220-2
Packaging: Tube
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
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MUR880E mur8100e-d.pdf
MUR880E
Виробник: onsemi
Description: DIODE STANDARD 800V 8A TO2202
Current - Reverse Leakage @ Vr: 25 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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MUR810 mur820-d.pdf
MUR810
Виробник: onsemi
Description: DIODE STANDARD 100V 8A TO2202
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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MUR3060WT mur3020wt-d.pdf
MUR3060WT
Виробник: onsemi
Description: DIODE ARRAY GP 600V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MMSZ5266BT1 SZ%2CMMSZ52zzzT1G_Series.pdf
MMSZ5266BT1
Виробник: onsemi
Description: DIODE ZENER 68V 500MW SOD123
Impedance (Max) (Zzt): 230 Ohms
Voltage - Zener (Nom) (Vz): 68 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 52 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
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MMSZ4687T1 mmsz4678t1-d.pdf
MMSZ4687T1
Виробник: onsemi
Description: DIODE ZENER 4.3V 500MW SOD123
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: SOD-123
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Voltage - Zener (Nom) (Vz): 4.3 V
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MMSZ4686T1 mmsz4678t1-d.pdf
MMSZ4686T1
Виробник: onsemi
Description: DIODE ZENER 3.9V 500MW SOD123
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMSZ4685T1 mmsz4678t1-d.pdf
MMSZ4685T1
Виробник: onsemi
Description: DIODE ZENER 3.6V 500MW SOD123
Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMSZ4684T1 mmsz4678t1-d.pdf
MMSZ4684T1
Виробник: onsemi
Description: DIODE ZENER 3.3V 500MW SOD123
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMSZ4681T1 mmsz4678t1-d.pdf
MMSZ4681T1
Виробник: onsemi
Description: DIODE ZENER 2.4V 500MW SOD123
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 2.4 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMSZ5263BT1 SZ%2CMMSZ52zzzT1G_Series.pdf
MMSZ5263BT1
Виробник: onsemi
Description: DIODE ZENER 56V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMSZ10T1 mmsz2v4t1-d.pdf
MMSZ10T1
Виробник: onsemi
Description: DIODE ZENER 10V 500MW SOD123
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Obsolete
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MURS105T3 murs120t3-d.pdf
MURS105T3
Виробник: onsemi
Description: DIODE GEN PURP 50V 2A SMB
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MMBZ6V2ALT1 mmbz5v6alt1-d.pdf
MMBZ6V2ALT1
Виробник: onsemi
Description: TVS DIODE 3VWM 8.7VC SOT23-3
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MMSZ6V8T1 mmsz2v4t1-d.pdf
MMSZ6V8T1
Виробник: onsemi
Description: DIODE ZENER 6.8V 500MW SOD123
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMSZ4678T1 mmsz4678t1-d.pdf
MMSZ4678T1
Виробник: onsemi
Description: DIODE ZENER 1.8V 500MW SOD123
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 1.8 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMBZ6V8ALT1 mmbz5v6alt1-d.pdf
MMBZ6V8ALT1
Виробник: onsemi
Description: TVS DIODE 4.5VWM 9.6VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 9.6V
Power - Peak Pulse: 24W
Power Line Protection: No
Part Status: Obsolete
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MMSZ5264BT1 SZ%2CMMSZ52zzzT1G_Series.pdf
MMSZ5264BT1
Виробник: onsemi
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
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MURS260T3 murs260t3-d.pdf
MURS260T3
Виробник: onsemi
Description: DIODE GEN PURP 600V 2A SMB
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MMSZ5262BT1 SZ,MMSZ52zzzT1G_Series.pdf
MMSZ5262BT1
Виробник: onsemi
Description: DIODE ZENER 51V 500MW SOD123
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MR750RL mr750-d.pdf
MR750RL
Виробник: onsemi
Description: DIODE STD 50V 6A MICRODE BUTTON
Packaging: Tape & Reel (TR)
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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MMSZ4688T1 mmsz4678t1-d.pdf
MMSZ4688T1
Виробник: onsemi
Description: DIODE ZENER 4.7V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
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MUR1100ERL mur180e-d.pdf
MUR1100ERL
Виробник: onsemi
Description: DIODE STANDARD 1000V 1A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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MMSZ5225BT1 SZ%2CMMSZ52zzzT1G_Series.pdf
MMSZ5225BT1
Виробник: onsemi
Description: DIODE ZENER 3V 500MW SOD123
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 29 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MR756RL mr750-d.pdf
MR756RL
Виробник: onsemi
Description: DIODE STD 600V 6A MICRODE BUTTON
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Microde Button
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Button, Axial
Packaging: Tape & Reel (TR)
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MR852RL mr850-d.pdf
MR852RL
Виробник: onsemi
Description: DIODE GEN PURP 200V 3A AXIAL
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 3A
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MRA4007T3 mra4003t3-d.pdf
MRA4007T3
Виробник: onsemi
Description: DIODE GEN PURP 1KV 1A SMA
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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