| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
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NVMFD5485NLWFT3G | onsemi |
 Description: MOSFET 2N-CH 60V 5.3A DFN8Part Status: Obsolete Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Current - Continuous Drain (Id) @ 25°C: 5.3A Drain to Source Voltage (Vdss): 60V Power - Max: 2.9W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFD5489NLT3G | onsemi |
Description: MOSFET 2N-CH 60V 4.5A DFN8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFD5489NLWFT1G | onsemi |
Description: MOSFET 2N-CH 60V 4.5A DFN8 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||
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NVMFD5489NLWFT3G | onsemi |
Description: MOSFET 2N-CH 60V 4.5A DFN8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFD5853NWFT1G | onsemi |
Description: MOSFET 2N-CH 40V 12A 8DFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 4V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V Current - Continuous Drain (Id) @ 25°C: 12A Drain to Source Voltage (Vdss): 40V Power - Max: 3.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFD5877NLWFT3G | onsemi |
Description: MOSFET 2N-CH 60V 6A 8DFN Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 7.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 60V Power - Max: 3.2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5826NLT3G | onsemi |
Description: MOSFET N-CH 60V 8A 5DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5826NLWFT3G | onsemi |
Description: MOSFET N-CH 60V 8A 5DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5830NLT3G | onsemi |
Description: MOSFET N-CH 40V 29A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5830NLWFT1G | onsemi |
Description: MOSFET N-CH 40V 29A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5830NLWFT3G | onsemi |
Description: MOSFET N-CH 40V 29A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5832NLT3G | onsemi |
Description: MOSFET N-CH 40V 21A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 127W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5832NLWFT1G | onsemi |
Description: MOSFET N-CH 40V 21A 5DFN Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 127W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5832NLWFT3G | onsemi |
Description: MOSFET N-CH 40V 21A 5DFN Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 127W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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NVMFS5833NT1G | onsemi |
Description: MOSFET N-CH 40V 16A 5DFN Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 3.7W (Ta), 112W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5833NT3G | onsemi |
Description: MOSFET N-CH 40V 16A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 3.7W (Ta), 112W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5833NWFT1G | onsemi |
Description: MOSFET N-CH 40V 16A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 3.7W (Ta), 112W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5833NWFT3G | onsemi |
Description: MOSFET N-CH 40V 16A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 3.7W (Ta), 112W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5834NLT3G | onsemi |
Description: MOSFET N-CH 40V 14A/75A 5DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5834NLWFT3G | onsemi |
Description: MOSFET N-CH 40V 14A/75A 5DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5844NLWFT3G | onsemi |
Description: MOSFET N-CH 60V 11.2A 5DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVMFS5885NLT1G | onsemi |
Description: MOSFET N-CH 60V 10.2A 5DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVR4501NT1G | onsemi |
Description: MOSFET N-CH 20V 3.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.25W (Tj) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NVR5198NLT1G | onsemi |
Description: MOSFET N-CH 60V 1.7A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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NVS4001NT1G | onsemi |
Description: MOSFET N-CH 30V 270MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 48110 шт: термін постачання 21-31 дні (днів) |
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NVTFS4C06NWFTAG | onsemi |
Description: MOSFET N-CH 30V 21A 8WDFN Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||
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NVTFS5124PLTAG | onsemi |
Description: MOSFET P-CH 60V 2.4A 8WDFN Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVTFS5124PLWFTWG | onsemi |
Description: MOSFET P-CH 60V 2.4A 8WDFN Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVTFS5811NLWFTAG | onsemi |
Description: MOSFET N-CH 40V 16A 8WDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVTFS5820NLWFTAG | onsemi |
Description: MOSFET N-CH 60V 11A 8WDFN Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1462 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVTFS5820NLWFTWG | onsemi |
Description: MOSFET N-CH 60V 11A 8WDFN Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1462 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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NVTFS5826NLWFTAG | onsemi |
Description: MOSFET N-CH 60V 7.6A 8WDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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P1P40167MNTWG | onsemi |
Description: IC CLOCK GENERATOR 1.8V 4PLL DigiKey Programmable: Not Verified Number of Circuits: 1 Divider/Multiplier: No/No PLL: Yes with Bypass Supplier Device Package: 16-QFN (3x3) Differential - Input:Output: No/No Ratio - Input:Output: 1:5 Voltage - Supply: 1.7V ~ 2V Operating Temperature: -10°C ~ 80°C Input: LVCMOS, Crystal Frequency - Max: 37MHz Output: LVCMOS Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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P3PS550AHG-08-CR | onsemi |
Description: IC CLK GEN EMI MODULATOR 8-WDFN DigiKey Programmable: Not Verified Number of Circuits: 1 Divider/Multiplier: No/No PLL: Yes Supplier Device Package: 8-WDFN (2x2) Differential - Input:Output: No/No Ratio - Input:Output: 1:1 Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -20°C ~ 85°C Input: LVCMOS Frequency - Max: 36MHz Output: LVCMOS Mounting Type: Surface Mount Package / Case: 8-WFDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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P5P2305AF-1H08TR | onsemi |
Description: IC ZD BUFFER 8TSSOP DigiKey Programmable: Not Verified Number of Circuits: 1 Divider/Multiplier: No/No PLL: Yes Supplier Device Package: 8-TSSOP Differential - Input:Output: No/No Ratio - Input:Output: 1:5 Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C Input: Clock Type: Zero Delay Buffer Frequency - Max: 133MHz Output: Clock Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| PCP1203-P-TD-H | onsemi |
Description: TRANS NPN 30V 1.5A PCP Frequency - Transition: 500MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 225mV @ 15mA, 750mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) Power - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: PCP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||
| RD0504T-P-TL-H | onsemi |
Description: DIODE STANDARD 400V 5A TPFA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 17 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TP-FA Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 400 V |
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В кошику од. на суму грн. | |||||
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RD0506LS-SB-1H | onsemi |
Description: DIODE STANDARD 600V 5A TO220F2FS Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-220F-2FS Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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SB10015M-TL-W | onsemi |
Description: DIODE SCHOTTKY 15V 1A 3MCPH Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 20pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: 3-MCPH Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A Current - Reverse Leakage @ Vr: 3 µA @ 7.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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SB1003M3-TL-W | onsemi |
Description: DIODE SCHOTTKY 30V 1A 3MCPH Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 27pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: 3-MCPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 15 µA @ 16 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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SB2003M-TL-W | onsemi |
Description: DIODE SCHOTTKY 30V 2A 6MCPH Current - Reverse Leakage @ Vr: 30 µA @ 15 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: 6-MCPH Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 75pF @ 10V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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SB80W06T-P-TL-H | onsemi |
Description: DIODE ARRAY SCHOTTKY 60V 4A TPFA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: TP-FA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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SBAS16HT3G | onsemi |
Description: DIODE STANDARD 100V 200MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||
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SBAV70WT1G | onsemi |
Description: DIODE ARRAY GP 100V 200MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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SBC847BPDW1T3G | onsemi |
Description: TRANS NPN/PNP 45V 0.1A SC88/SC70 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SBE805-TL-W | onsemi |
Description: DIODE ARR SCHOTT 30V 500MA 5-CPH Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 500mA Supplier Device Package: 5-CPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Current - Reverse Leakage @ Vr: 30 µA @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SBE807-S-TL-W | onsemi |
Description: DIODE ARRAY SCHOTTKY 30V 1A 5CPH Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1A Supplier Device Package: 5-CPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 15 µA @ 16 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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SBE807-TL-W | onsemi |
Description: DIODE ARRAY SCHOTTKY 30V 1A 5CPH Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1A Supplier Device Package: 5-CPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 15 µA @ 16 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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SBS811-S-TL-E | onsemi |
Description: DIODE ARRAY SCHOTTKY 30V 2A 8VEC Technology: Schottky Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: 8-VEC Current - Average Rectified (Io) (per Diode): 2A Diode Configuration: 2 Independent |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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SBS822-S-TL-H | onsemi |
Description: DIODE ARRAY SCHOTT 20V 1A 5MCPH Current - Reverse Leakage @ Vr: 110 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: 5-MCPH Current - Average Rectified (Io) (per Diode): 1A Diode Configuration: 2 Independent Technology: Schottky Reverse Recovery Time (trr): 10 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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SBS822-TL-W | onsemi |
Description: DIODE ARRAY SCHOTT 20V 1A 5-MCPH Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1A Supplier Device Package: 5-MCPH Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A Current - Reverse Leakage @ Vr: 110 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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SMMBT3904LT3G | onsemi |
Description: TRANS NPN 40V 0.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SMMBTA14LT3G | onsemi |
Description: TRANS NPN DARL 30V 0.3A SOT23-3 Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 300 mA Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 225 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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SMP3003-DL-1E | onsemi |
Description: MOSFET P-CH 75V 100A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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SMP3003-TL-1E | onsemi |
Description: MOSFET P-CH 75V 100A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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SMUN5311DW1T3G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||
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SS3003CH-TL-W | onsemi |
Description: DIODE SCHOTTKY 30V 3A 6CPH Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Schottky Capacitance @ Vr, F: 880pF @ 0V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: 6-CPH Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A Current - Reverse Leakage @ Vr: 1.4 mA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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SS30-TE-L-E | onsemi |
Description: IC MOTOR DRIVER 2.2V-6V 20VCT Motor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: 20-VCT (3x3) Voltage - Load: 2.2V ~ 6V Technology: Bi-CMOS Applications: Fan Motor Driver Voltage - Supply: 2.2V ~ 6V Output Configuration: Half Bridge (3) Operating Temperature: -30°C ~ 95°C (TA) Interface: PWM Current - Output: 700mA Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 20-WFQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| STK350-630-E | onsemi |
Description: IC AMP CLASS D STEREO Part Status: Obsolete Type: Class D Output Type: 2-Channel (Stereo) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| STK350-630T-E | onsemi |
Description: IC AMP CLASS D STEREO Part Status: Obsolete Type: Class D Output Type: 2-Channel (Stereo) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| NVMFD5485NLWFT3G |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 5.3A DFN8
Part Status: Obsolete
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.9W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 5.3A DFN8
Part Status: Obsolete
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.9W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| NVMFD5489NLT3G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 60V 4.5A DFN8
Description: MOSFET 2N-CH 60V 4.5A DFN8
товару немає в наявності
В кошику
од. на суму грн.
| NVMFD5489NLWFT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 60V 4.5A DFN8
Description: MOSFET 2N-CH 60V 4.5A DFN8
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NVMFD5489NLWFT3G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 60V 4.5A DFN8
Description: MOSFET 2N-CH 60V 4.5A DFN8
товару немає в наявності
В кошику
од. на суму грн.
| NVMFD5853NWFT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 40V 12A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 12A
Drain to Source Voltage (Vdss): 40V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 12A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 12A
Drain to Source Voltage (Vdss): 40V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| NVMFD5877NLWFT3G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 60V 6A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 6A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| NVMFS5826NLT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 8A 5DFN
Description: MOSFET N-CH 60V 8A 5DFN
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В кошику
од. на суму грн.
| NVMFS5826NLWFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 8A 5DFN
Description: MOSFET N-CH 60V 8A 5DFN
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В кошику
од. на суму грн.
| NVMFS5830NLT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| NVMFS5830NLWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| NVMFS5830NLWFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 25 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| NVMFS5832NLT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 21A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 21A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
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од. на суму грн.
| NVMFS5832NLWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 21A 5DFN
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 127W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Description: MOSFET N-CH 40V 21A 5DFN
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 127W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
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од. на суму грн.
| NVMFS5832NLWFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 21A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 127W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 21A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 127W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 38.77 грн |
| NVMFS5833NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 16A 5DFN
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 112W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Description: MOSFET N-CH 40V 16A 5DFN
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 112W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
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од. на суму грн.
| NVMFS5833NT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 16A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 112W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 16A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 112W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| NVMFS5833NWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 16A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 112W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 16A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 112W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| NVMFS5833NWFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 16A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 112W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 16A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 112W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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од. на суму грн.
| NVMFS5834NLT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 14A/75A 5DFN
Description: MOSFET N-CH 40V 14A/75A 5DFN
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В кошику
од. на суму грн.
| NVMFS5834NLWFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 14A/75A 5DFN
Description: MOSFET N-CH 40V 14A/75A 5DFN
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В кошику
од. на суму грн.
| NVMFS5844NLWFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 11.2A 5DFN
Description: MOSFET N-CH 60V 11.2A 5DFN
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В кошику
од. на суму грн.
| NVMFS5885NLT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 10.2A 5DFN
Description: MOSFET N-CH 60V 10.2A 5DFN
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В кошику
од. на суму грн.
| NVR4501NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 3.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 3.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.89 грн |
| 6000+ | 9.60 грн |
| NVR5198NLT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 1.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 1.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.66 грн |
| 6000+ | 8.49 грн |
| NVS4001NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 270MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 5 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 270MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 48110 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.17 грн |
| 6000+ | 5.38 грн |
| NVTFS4C06NWFTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 21A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 21A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1500 шт
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| NVTFS5124PLTAG |
|
Виробник: onsemi
Description: MOSFET P-CH 60V 2.4A 8WDFN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Description: MOSFET P-CH 60V 2.4A 8WDFN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 23.38 грн |
| 3000+ | 20.68 грн |
| NVTFS5124PLWFTWG |
|
Виробник: onsemi
Description: MOSFET P-CH 60V 2.4A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 2.4A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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| NVTFS5811NLWFTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 16A 8WDFN
Description: MOSFET N-CH 40V 16A 8WDFN
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| NVTFS5820NLWFTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 11A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1462 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 11A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1462 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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| NVTFS5820NLWFTWG |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 11A 8WDFN
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1462 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Description: MOSFET N-CH 60V 11A 8WDFN
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1462 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
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| NVTFS5826NLWFTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 7.6A 8WDFN
Description: MOSFET N-CH 60V 7.6A 8WDFN
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| P1P40167MNTWG |
Виробник: onsemi
Description: IC CLOCK GENERATOR 1.8V 4PLL
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 16-QFN (3x3)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -10°C ~ 80°C
Input: LVCMOS, Crystal
Frequency - Max: 37MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC CLOCK GENERATOR 1.8V 4PLL
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 16-QFN (3x3)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -10°C ~ 80°C
Input: LVCMOS, Crystal
Frequency - Max: 37MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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| P3PS550AHG-08-CR |
|
Виробник: onsemi
Description: IC CLK GEN EMI MODULATOR 8-WDFN
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
PLL: Yes
Supplier Device Package: 8-WDFN (2x2)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:1
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -20°C ~ 85°C
Input: LVCMOS
Frequency - Max: 36MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 8-WFDFN
Packaging: Tape & Reel (TR)
Description: IC CLK GEN EMI MODULATOR 8-WDFN
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
PLL: Yes
Supplier Device Package: 8-WDFN (2x2)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:1
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -20°C ~ 85°C
Input: LVCMOS
Frequency - Max: 36MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 8-WFDFN
Packaging: Tape & Reel (TR)
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| P5P2305AF-1H08TR |
|
Виробник: onsemi
Description: IC ZD BUFFER 8TSSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
PLL: Yes
Supplier Device Package: 8-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Type: Zero Delay Buffer
Frequency - Max: 133MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC ZD BUFFER 8TSSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
PLL: Yes
Supplier Device Package: 8-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Type: Zero Delay Buffer
Frequency - Max: 133MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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| PCP1203-P-TD-H |
Виробник: onsemi
Description: TRANS NPN 30V 1.5A PCP
Frequency - Transition: 500MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 225mV @ 15mA, 750mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: PCP
Description: TRANS NPN 30V 1.5A PCP
Frequency - Transition: 500MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 225mV @ 15mA, 750mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: PCP
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Мінімальне замовлення: 1000 шт
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| RD0504T-P-TL-H |
Виробник: onsemi
Description: DIODE STANDARD 400V 5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TP-FA
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Description: DIODE STANDARD 400V 5A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TP-FA
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
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| RD0506LS-SB-1H |
|
Виробник: onsemi
Description: DIODE STANDARD 600V 5A TO220F2FS
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE STANDARD 600V 5A TO220F2FS
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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| SB10015M-TL-W |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 15V 1A 3MCPH
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: 3-MCPH
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 7.5 V
Description: DIODE SCHOTTKY 15V 1A 3MCPH
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: 3-MCPH
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 7.5 V
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| SB1003M3-TL-W |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A 3MCPH
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 27pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: 3-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 15 µA @ 16 V
Description: DIODE SCHOTTKY 30V 1A 3MCPH
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 27pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: 3-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 15 µA @ 16 V
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| SB2003M-TL-W |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A 6MCPH
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 6-MCPH
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 2A 6MCPH
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 6-MCPH
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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| SB80W06T-P-TL-H |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 60V 4A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TP-FA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE ARRAY SCHOTTKY 60V 4A TPFA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TP-FA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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| SBAS16HT3G |
|
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
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Мінімальне замовлення: 10000 шт
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| SBAV70WT1G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 100V 200MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 100V 200MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.67 грн |
| 6000+ | 2.29 грн |
| SBC847BPDW1T3G |
|
Виробник: onsemi
Description: TRANS NPN/PNP 45V 0.1A SC88/SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TRANS NPN/PNP 45V 0.1A SC88/SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 2.55 грн |
| SBE805-TL-W |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 30V 500MA 5-CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
Description: DIODE ARR SCHOTT 30V 500MA 5-CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.35 грн |
| SBE807-S-TL-W |
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 30V 1A 5CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 15 µA @ 16 V
Description: DIODE ARRAY SCHOTTKY 30V 1A 5CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 15 µA @ 16 V
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| SBE807-TL-W |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 30V 1A 5CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 15 µA @ 16 V
Description: DIODE ARRAY SCHOTTKY 30V 1A 5CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 15 µA @ 16 V
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| SBS811-S-TL-E |
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 30V 2A 8VEC
Technology: Schottky
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 8-VEC
Current - Average Rectified (Io) (per Diode): 2A
Diode Configuration: 2 Independent
Description: DIODE ARRAY SCHOTTKY 30V 2A 8VEC
Technology: Schottky
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 8-VEC
Current - Average Rectified (Io) (per Diode): 2A
Diode Configuration: 2 Independent
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| SBS822-S-TL-H |
Виробник: onsemi
Description: DIODE ARRAY SCHOTT 20V 1A 5MCPH
Current - Reverse Leakage @ Vr: 110 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 5-MCPH
Current - Average Rectified (Io) (per Diode): 1A
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOTT 20V 1A 5MCPH
Current - Reverse Leakage @ Vr: 110 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 5-MCPH
Current - Average Rectified (Io) (per Diode): 1A
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Tape & Reel (TR)
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| SBS822-TL-W |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOTT 20V 1A 5-MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: 5-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Current - Reverse Leakage @ Vr: 110 µA @ 10 V
Description: DIODE ARRAY SCHOTT 20V 1A 5-MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1A
Supplier Device Package: 5-MCPH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Current - Reverse Leakage @ Vr: 110 µA @ 10 V
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| SMMBT3904LT3G |
|
Виробник: onsemi
Description: TRANS NPN 40V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 40V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 1.38 грн |
| SMMBTA14LT3G |
|
Виробник: onsemi
Description: TRANS NPN DARL 30V 0.3A SOT23-3
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 225 mW
Description: TRANS NPN DARL 30V 0.3A SOT23-3
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 225 mW
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| SMP3003-DL-1E |
Виробник: onsemi
Description: MOSFET P-CH 75V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 75V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| SMP3003-TL-1E |
Виробник: onsemi
Description: MOSFET P-CH 75V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 75V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| SMUN5311DW1T3G |
|
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 10000 шт
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| SS3003CH-TL-W |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 3A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 880pF @ 0V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: 6-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 15 V
Description: DIODE SCHOTTKY 30V 3A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 880pF @ 0V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: 6-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 15 V
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| SS30-TE-L-E |
|
Виробник: onsemi
Description: IC MOTOR DRIVER 2.2V-6V 20VCT
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 20-VCT (3x3)
Voltage - Load: 2.2V ~ 6V
Technology: Bi-CMOS
Applications: Fan Motor Driver
Voltage - Supply: 2.2V ~ 6V
Output Configuration: Half Bridge (3)
Operating Temperature: -30°C ~ 95°C (TA)
Interface: PWM
Current - Output: 700mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-WFQFN
Packaging: Tape & Reel (TR)
Description: IC MOTOR DRIVER 2.2V-6V 20VCT
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 20-VCT (3x3)
Voltage - Load: 2.2V ~ 6V
Technology: Bi-CMOS
Applications: Fan Motor Driver
Voltage - Supply: 2.2V ~ 6V
Output Configuration: Half Bridge (3)
Operating Temperature: -30°C ~ 95°C (TA)
Interface: PWM
Current - Output: 700mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 20-WFQFN
Packaging: Tape & Reel (TR)
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| STK350-630-E |
Виробник: onsemi
Description: IC AMP CLASS D STEREO
Part Status: Obsolete
Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Tube
Description: IC AMP CLASS D STEREO
Part Status: Obsolete
Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Tube
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| STK350-630T-E |
Виробник: onsemi
Description: IC AMP CLASS D STEREO
Part Status: Obsolete
Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Tube
Description: IC AMP CLASS D STEREO
Part Status: Obsolete
Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Tube
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