Продукція > ONSEMI > Всі товари виробника ONSEMI (146211) > Сторінка 537 з 2437

Обрати Сторінку:   [  << Попередня Сторінка ]  1 243 486 532 533 534 535 536 537 538 539 540 541 542 729 972 1215 1458 1701 1944 2187 2430 2437  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність Ціна без ПДВ
NRVBB41H100CTT4G NRVBB41H100CTT4G onsemi mbr41h100ct-d.pdf Description: DIODE ARRAY GP 100V 20A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NRVBM120ET3G NRVBM120ET3G onsemi mbrm120e-d.pdf Description: DIODE SCHOTTKY 20V 1A POWERMITE
товару немає в наявності
В кошику  од. на суму  грн.
NRVBM120LT3G NRVBM120LT3G onsemi mbrm120l-d.pdf Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 10 V
товару немає в наявності
 Мінімальне замовлення: 12000 шт
В кошику  од. на суму  грн.
NRVBM130LT3G NRVBM130LT3G onsemi mbrm130l-d.pdf Description: DIODE SCHOTTKY 30V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 10 V
товару немає в наявності
 Мінімальне замовлення: 12000 шт
В кошику  од. на суму  грн.
NRVBS260T3G-VF01 NRVBS260T3G-VF01 onsemi mbrs260t3-d.pdf Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товару немає в наявності
В кошику  од. на суму  грн.
NRVBSS24T3G NRVBSS24T3G onsemi ss24-d.pdf Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
NSBA113EDXV6T1G NSBA113EDXV6T1G onsemi dta113ed-d.pdf Description: TRANS 2PNP PREBIAS 0.25W SOT563
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBA123EF3T5G NSBA123EF3T5G onsemi dta123e-d.pdf Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
товару немає в наявності
 Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSBA124XDXV6T1G NSBA124XDXV6T1G onsemi dta124xd-d.pdf Description: TRANS 2PNP PREBIAS 0.5W SOT563
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBA144TF3T5G NSBA144TF3T5G onsemi dta144t-d.pdf Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
товару немає в наявності
 Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSBC113EPDXV6T1G NSBC113EPDXV6T1G onsemi dtc113ep-d.pdf Description: TRANS PREBIAS NPN/PNP SOT563
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 1kOhm
Resistor - Base (R1): 1kOhm
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
на замовлення 112000 шт:
термін постачання 21-31 дні (днів)
4000+7.14 грн
8000+6.32 грн
12000+6.04 грн
20000+5.37 грн
28000+5.19 грн
40000+5.09 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBC123EF3T5G NSBC123EF3T5G onsemi dtc123e-d.pdf Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NSBC143TF3T5G NSBC143TF3T5G onsemi dtc143t-d.pdf Description: TRANS PREBIAS NPN 50V SOT1123
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Power - Max: 254 mW
товару немає в наявності
В кошику  од. на суму  грн.
NSBC143ZDXV6T5G NSBC143ZDXV6T5G onsemi dtc143zd-d.pdf Description: TRANS 2NPN PREBIAS 0.5W SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NSBC144TF3T5G NSBC144TF3T5G onsemi dtc144t-d.pdf Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Base (R1): 47 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSBC144WDXV6T1G NSBC144WDXV6T1G onsemi dtc144wd-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NSR0115CQP6T5G NSR0115CQP6T5G onsemi nsr0115cqp6-d.pdf Description: DIODE ARR SCHOT 15V 100MA SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-963
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA
Current - Reverse Leakage @ Vr: 15 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
NSR01F30MXT5G NSR01F30MXT5G onsemi nsr01f30mx-d.pdf Description: DIODE SCHOTTKY 30V 100MA 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.9pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
NSR0240V2T5G NSR0240V2T5G onsemi nsr0240v2t1-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
товару немає в наявності
 Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSR20F40NXT5G NSR20F40NXT5G onsemi nsr20f40-d.pdf Description: DIODE SCHOTTKY 40V 2A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8), (0603)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
на замовлення 155000 шт:
термін постачання 21-31 дні (днів)
5000+10.43 грн
10000+9.22 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
NSS1C300ET4G NSS1C300ET4G onsemi nss1c300e-d.pdf Description: TRANS PNP 100V 3A DPAK
Power - Max: 2.1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+25.33 грн
5000+22.60 грн
7500+21.68 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NSS1C301ET4G NSS1C301ET4G onsemi nss1c301e-d.pdf Description: TRANS NPN 100V 3A DPAK
Power - Max: 2.1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: DPAK
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NSV1C201LT1G NSV1C201LT1G onsemi nss1c201l-d.pdf Description: TRANS NPN 100V 2A SOT23-3
Power - Max: 490 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSV1C201MZ4T1G NSV1C201MZ4T1G onsemi nss1c201mz4-d.pdf Description: TRANS NPN 100V 2A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
1000+17.07 грн
2000+14.94 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
NSV1C300ET4G NSV1C300ET4G onsemi nss1c300e-d.pdf Description: TRANS PNP 100V 3A DPAK
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NSV1C301ET4G-VF01 NSV1C301ET4G-VF01 onsemi nss1c301e-d.pdf Description: TRANS NPN 100V 3A 3DPAK
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NSV20201LT1G NSV20201LT1G onsemi nss20201l-d.pdf Description: TRANS NPN 20V 2A SOT23-3
Power - Max: 460 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+11.98 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVB144EPDXV6T1G NSVB144EPDXV6T1G onsemi dtc144ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSVBAS19LT1G NSVBAS19LT1G onsemi bas19lt1-d.pdf Description: DIODE STANDARD 120V 200MA SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVBAS21SLT1G NSVBAS21SLT1G onsemi bas21slt1-d.pdf Description: DIODE STANDARD 250V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVBAS21TMR6T1G NSVBAS21TMR6T1G onsemi bas21tmr6-d.pdf Description: DIODE ARRAY GP 250V 200MA SC-74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-74
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVBAV23CLT1G NSVBAV23CLT1G onsemi bav23clt1-d.pdf Description: DIODE ARR GP 250V 400MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVBC124EDXV6T1G NSVBC124EDXV6T1G onsemi dtc124ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NSVBC848CDW1T1G NSVBC848CDW1T1G onsemi bc846bdw1t1-d.pdf Description: TRANS 2NPN 30V 100MA SC88/SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
NSVBC848CLT1G NSVBC848CLT1G onsemi bc846alt1-d.pdf Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+1.93 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVMMBT2907AWT1G NSVMMBT2907AWT1G onsemi mmbt2907awt1-d.pdf Description: TRANS PNP 60V 0.6A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVMMBT5401LT3G NSVMMBT5401LT3G onsemi mmbt5401lt1-d.pdf Description: TRANS PNP 150V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 225 mW
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
NSVMMBT6429LT1G NSVMMBT6429LT1G onsemi mmbt6428lt1-d.pdf Description: TRANS NPN 45V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.43 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVMMBT6520LT1G NSVMMBT6520LT1G onsemi mmbt6520lt1-d.pdf Description: TRANS PNP 350V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 225 mW
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+11.15 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVMMUN2133LT1G NSVMMUN2133LT1G onsemi dta143z-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
3000+2.08 грн
6000+1.81 грн
9000+1.70 грн
15000+1.49 грн
21000+1.43 грн
30000+1.36 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVMMUN2212LT1G NSVMMUN2212LT1G onsemi dtc124e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)
3000+2.22 грн
6000+1.90 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVMUN5332DW1T1G NSVMUN5332DW1T1G onsemi dtc143ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVPZTA92T1G NSVPZTA92T1G onsemi pzta92t1-d.pdf Description: TRANS PNP 300V 0.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
NSVR0230P2T5G NSVR0230P2T5G onsemi nsr0230p2-d.pdf Description: DIODE SCHOTTKY 30V 200MA SOD923
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-923
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSVR0520V2T1G NSVR0520V2T1G onsemi nsr0520v2t1-d.pdf Description: DIODE SCHOTTKY 20V 500MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVUMC3NT1G NSVUMC3NT1G onsemi umc2nt1-d.pdf Description: TRANS NPN/PNP PREBIAS 0.15W SC88
Part Status: Active
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVUMC5NT2G NSVUMC5NT2G onsemi umc2nt1-d.pdf Description: TRANS PREBIAS NPN/PNP 50V SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NTA4151PT1H NTA4151PT1H onsemi nta4151p-d.pdf Description: MOSFET P-CH 20V 760MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Power Dissipation (Max): 301mW (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
на замовлення 153000 шт:
термін постачання 21-31 дні (днів)
3000+6.48 грн
6000+6.10 грн
9000+5.40 грн
30000+5.00 грн
75000+4.25 грн
150000+4.09 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NTLLD4901NFTWG NTLLD4901NFTWG onsemi ntlld4901nf-d.pdf Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 810mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3x3)
товару немає в наявності
В кошику  од. на суму  грн.
NTLLD4951NFTWG NTLLD4951NFTWG onsemi Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 810mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3x3)
товару немає в наявності
В кошику  од. на суму  грн.
NTLUD3A50PZTAG NTLUD3A50PZTAG onsemi ntlud3a50pz-d.pdf Description: MOSFET 2P-CH 20V 2.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
товару немає в наявності
В кошику  од. на суму  грн.
NTLUD3A50PZTBG NTLUD3A50PZTBG onsemi ntlud3a50pz-d.pdf Description: MOSFET 2P-CH 20V 2.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
товару немає в наявності
В кошику  од. на суму  грн.
NTLUS3A18PZCTAG NTLUS3A18PZCTAG onsemi Description: MOSFET P-CH 20V 5.1A 6UDFN
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
товару немає в наявності
В кошику  од. на суму  грн.
NTLUS3A18PZCTBG NTLUS3A18PZCTBG onsemi Description: MOSFET P-CH 20V 5.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NTLUS3A18PZCTCG NTLUS3A18PZCTCG onsemi Description: MOSFET P-CH 20V 5.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NTLUS3A18PZTCG NTLUS3A18PZTCG onsemi ntlus3a18pz-d.pdf Description: MOSFET P-CH 20V 5.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NTLUS3A40PZCTAG NTLUS3A40PZCTAG onsemi NTLUS3A40PZC.pdf Description: MOSFET P-CH 20V 4A 6UDFN
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
товару немає в наявності
В кошику  од. на суму  грн.
NTMFD4951NFT1G onsemi Description: MOSFET N-CH 30V 10.8A SO8FL
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NTMFD4951NFT3G NTMFD4951NFT3G onsemi Description: MOSFET N-CH 30V 10.8A 8DFN DL
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
товару немає в наявності
В кошику  од. на суму  грн.
NTMFD4952NFT1G NTMFD4952NFT1G onsemi Description: MOSFET N-CH 30V 10.8A 8DFN DL
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NRVBB41H100CTT4G mbr41h100ct-d.pdf
NRVBB41H100CTT4G
Виробник: onsemi
Description: DIODE ARRAY GP 100V 20A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NRVBM120ET3G mbrm120e-d.pdf
NRVBM120ET3G
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A POWERMITE
товару немає в наявності
В кошику  од. на суму  грн.
NRVBM120LT3G mbrm120l-d.pdf
NRVBM120LT3G
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 10 V
товару немає в наявності
Мінімальне замовлення: 12000 шт
В кошику  од. на суму  грн.
NRVBM130LT3G mbrm130l-d.pdf
NRVBM130LT3G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 10 V
товару немає в наявності
Мінімальне замовлення: 12000 шт
В кошику  од. на суму  грн.
NRVBS260T3G-VF01 mbrs260t3-d.pdf
NRVBS260T3G-VF01
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товару немає в наявності
В кошику  од. на суму  грн.
NRVBSS24T3G ss24-d.pdf
NRVBSS24T3G
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
NSBA113EDXV6T1G dta113ed-d.pdf
NSBA113EDXV6T1G
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.25W SOT563
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBA123EF3T5G dta123e-d.pdf
NSBA123EF3T5G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSBA124XDXV6T1G dta124xd-d.pdf
NSBA124XDXV6T1G
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBA144TF3T5G dta144t-d.pdf
NSBA144TF3T5G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSBC113EPDXV6T1G dtc113ep-d.pdf
NSBC113EPDXV6T1G
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP SOT563
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 1kOhm
Resistor - Base (R1): 1kOhm
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
на замовлення 112000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4000+7.14 грн
8000+6.32 грн
12000+6.04 грн
20000+5.37 грн
28000+5.19 грн
40000+5.09 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBC123EF3T5G dtc123e-d.pdf
NSBC123EF3T5G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NSBC143TF3T5G dtc143t-d.pdf
NSBC143TF3T5G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Power - Max: 254 mW
товару немає в наявності
В кошику  од. на суму  грн.
NSBC143ZDXV6T5G dtc143zd-d.pdf
NSBC143ZDXV6T5G
Виробник: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NSBC144TF3T5G dtc144t-d.pdf
NSBC144TF3T5G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Resistor - Base (R1): 47 kOhms
Power - Max: 254 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSBC144WDXV6T1G dtc144wd-d.pdf
NSBC144WDXV6T1G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NSR0115CQP6T5G nsr0115cqp6-d.pdf
NSR0115CQP6T5G
Виробник: onsemi
Description: DIODE ARR SCHOT 15V 100MA SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-963
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA
Current - Reverse Leakage @ Vr: 15 µA @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
NSR01F30MXT5G nsr01f30mx-d.pdf
NSR01F30MXT5G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 100MA 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.9pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
NSR0240V2T5G nsr0240v2t1-d.pdf
NSR0240V2T5G
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSR20F40NXT5G nsr20f40-d.pdf
NSR20F40NXT5G
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8), (0603)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
на замовлення 155000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+10.43 грн
10000+9.22 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
NSS1C300ET4G nss1c300e-d.pdf
NSS1C300ET4G
Виробник: onsemi
Description: TRANS PNP 100V 3A DPAK
Power - Max: 2.1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+25.33 грн
5000+22.60 грн
7500+21.68 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NSS1C301ET4G nss1c301e-d.pdf
NSS1C301ET4G
Виробник: onsemi
Description: TRANS NPN 100V 3A DPAK
Power - Max: 2.1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: DPAK
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NSV1C201LT1G nss1c201l-d.pdf
NSV1C201LT1G
Виробник: onsemi
Description: TRANS NPN 100V 2A SOT23-3
Power - Max: 490 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSV1C201MZ4T1G nss1c201mz4-d.pdf
NSV1C201MZ4T1G
Виробник: onsemi
Description: TRANS NPN 100V 2A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+17.07 грн
2000+14.94 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
NSV1C300ET4G nss1c300e-d.pdf
NSV1C300ET4G
Виробник: onsemi
Description: TRANS PNP 100V 3A DPAK
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NSV1C301ET4G-VF01 nss1c301e-d.pdf
NSV1C301ET4G-VF01
Виробник: onsemi
Description: TRANS NPN 100V 3A 3DPAK
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NSV20201LT1G nss20201l-d.pdf
NSV20201LT1G
Виробник: onsemi
Description: TRANS NPN 20V 2A SOT23-3
Power - Max: 460 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+11.98 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVB144EPDXV6T1G dtc144ep-d.pdf
NSVB144EPDXV6T1G
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSVBAS19LT1G bas19lt1-d.pdf
NSVBAS19LT1G
Виробник: onsemi
Description: DIODE STANDARD 120V 200MA SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVBAS21SLT1G bas21slt1-d.pdf
NSVBAS21SLT1G
Виробник: onsemi
Description: DIODE STANDARD 250V 225MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVBAS21TMR6T1G bas21tmr6-d.pdf
NSVBAS21TMR6T1G
Виробник: onsemi
Description: DIODE ARRAY GP 250V 200MA SC-74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-74
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVBAV23CLT1G bav23clt1-d.pdf
NSVBAV23CLT1G
Виробник: onsemi
Description: DIODE ARR GP 250V 400MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVBC124EDXV6T1G dtc124ed-d.pdf
NSVBC124EDXV6T1G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NSVBC848CDW1T1G bc846bdw1t1-d.pdf
NSVBC848CDW1T1G
Виробник: onsemi
Description: TRANS 2NPN 30V 100MA SC88/SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
NSVBC848CLT1G bc846alt1-d.pdf
NSVBC848CLT1G
Виробник: onsemi
Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+1.93 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVMMBT2907AWT1G mmbt2907awt1-d.pdf
NSVMMBT2907AWT1G
Виробник: onsemi
Description: TRANS PNP 60V 0.6A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVMMBT5401LT3G mmbt5401lt1-d.pdf
NSVMMBT5401LT3G
Виробник: onsemi
Description: TRANS PNP 150V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 225 mW
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
NSVMMBT6429LT1G mmbt6428lt1-d.pdf
NSVMMBT6429LT1G
Виробник: onsemi
Description: TRANS NPN 45V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+4.43 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVMMBT6520LT1G mmbt6520lt1-d.pdf
NSVMMBT6520LT1G
Виробник: onsemi
Description: TRANS PNP 350V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 225 mW
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+11.15 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVMMUN2133LT1G dta143z-d.pdf
NSVMMUN2133LT1G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+2.08 грн
6000+1.81 грн
9000+1.70 грн
15000+1.49 грн
21000+1.43 грн
30000+1.36 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVMMUN2212LT1G dtc124e-d.pdf
NSVMMUN2212LT1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+2.22 грн
6000+1.90 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVMUN5332DW1T1G dtc143ep-d.pdf
NSVMUN5332DW1T1G
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVPZTA92T1G pzta92t1-d.pdf
NSVPZTA92T1G
Виробник: onsemi
Description: TRANS PNP 300V 0.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
NSVR0230P2T5G nsr0230p2-d.pdf
NSVR0230P2T5G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD923
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-923
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-923
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSVR0520V2T1G nsr0520v2t1-d.pdf
NSVR0520V2T1G
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 500MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVUMC3NT1G umc2nt1-d.pdf
NSVUMC3NT1G
Виробник: onsemi
Description: TRANS NPN/PNP PREBIAS 0.15W SC88
Part Status: Active
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSVUMC5NT2G umc2nt1-d.pdf
NSVUMC5NT2G
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NTA4151PT1H nta4151p-d.pdf
NTA4151PT1H
Виробник: onsemi
Description: MOSFET P-CH 20V 760MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Power Dissipation (Max): 301mW (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
на замовлення 153000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+6.48 грн
6000+6.10 грн
9000+5.40 грн
30000+5.00 грн
75000+4.25 грн
150000+4.09 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NTLLD4901NFTWG ntlld4901nf-d.pdf
NTLLD4901NFTWG
Виробник: onsemi
Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 810mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3x3)
товару немає в наявності
В кошику  од. на суму  грн.
NTLLD4951NFTWG
NTLLD4951NFTWG
Виробник: onsemi
Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 810mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3x3)
товару немає в наявності
В кошику  од. на суму  грн.
NTLUD3A50PZTAG ntlud3a50pz-d.pdf
NTLUD3A50PZTAG
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
товару немає в наявності
В кошику  од. на суму  грн.
NTLUD3A50PZTBG ntlud3a50pz-d.pdf
NTLUD3A50PZTBG
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
товару немає в наявності
В кошику  од. на суму  грн.
NTLUS3A18PZCTAG
NTLUS3A18PZCTAG
Виробник: onsemi
Description: MOSFET P-CH 20V 5.1A 6UDFN
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
товару немає в наявності
В кошику  од. на суму  грн.
NTLUS3A18PZCTBG
NTLUS3A18PZCTBG
Виробник: onsemi
Description: MOSFET P-CH 20V 5.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NTLUS3A18PZCTCG
NTLUS3A18PZCTCG
Виробник: onsemi
Description: MOSFET P-CH 20V 5.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NTLUS3A18PZTCG ntlus3a18pz-d.pdf
NTLUS3A18PZTCG
Виробник: onsemi
Description: MOSFET P-CH 20V 5.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NTLUS3A40PZCTAG NTLUS3A40PZC.pdf
NTLUS3A40PZCTAG
Виробник: onsemi
Description: MOSFET P-CH 20V 4A 6UDFN
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
товару немає в наявності
В кошику  од. на суму  грн.
NTMFD4951NFT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 10.8A SO8FL
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NTMFD4951NFT3G
NTMFD4951NFT3G
Виробник: onsemi
Description: MOSFET N-CH 30V 10.8A 8DFN DL
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
товару немає в наявності
В кошику  од. на суму  грн.
NTMFD4952NFT1G
NTMFD4952NFT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 10.8A 8DFN DL
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 243 486 532 533 534 535 536 537 538 539 540 541 542 729 972 1215 1458 1701 1944 2187 2430 2437  [ Наступна Сторінка >> ]