Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NVMFS5C426NLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C638NLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS6H800NT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 330µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AR0130CSSC00SPCA0-DPBR2 | onsemi |
![]() Packaging: Tray Package / Case: 48-LCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Grade: Automotive Frames per Second: 60 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0134CSSM00SPCA0-DPBR2 | onsemi |
![]() Packaging: Tray Package / Case: 48-LCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Obsolete Frames per Second: 60.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0144CSSM00SUKA0-CPBR2 | onsemi |
![]() Packaging: Tray Package / Case: 69-WFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1280H x 800V Supplier Device Package: 69-ODCSP (5.55x5.57) Frames per Second: 60 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0230CSSC00SUEA0-DPBR2 | onsemi |
![]() Packaging: Tray Package / Case: 80-BGA Type: CMOS Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 3µm x 3µm Active Pixel Array: 1928H x 1088V Supplier Device Package: 80-IBGA (10x10) Frames per Second: 60.0 |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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AR0238CSSC12SHRA0-DP2 | onsemi |
![]() Packaging: Tray Package / Case: 48-PLCC Type: CMOS Operating Temperature: -30°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 3µm x 3µm Active Pixel Array: 1928H x 1088V Supplier Device Package: 48-PLCC (11.43x11.43) Frames per Second: 60 |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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AR1335CSSC11SMKA0-CP2 | onsemi |
![]() Packaging: Tray Package / Case: 63-WFBGA, CSPBGA Type: CMOS Pixel Size: 1.1µm x 1.1µm Active Pixel Array: 4208H x 3120V Supplier Device Package: 63-ODCSP (6.29x5.69) Frames per Second: 30.0 |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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ASX340AT2C00XPED0-DPBR2 | onsemi |
![]() Packaging: Tray Package / Case: 63-LFBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V, 2.66V ~ 2.94V Active Pixel Array: 728H x 560V Supplier Device Package: 63-IBGA (7.5x7.5) Frames per Second: 60.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MT9V024IA7XTM-DP2 | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FDB9506L-F085 | onsemi |
Description: MOSFET N-CH 30V Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 24.5A (Ta), 110A (Tc) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AR0237ATSC12XUEA0-DPBR | onsemi |
![]() Packaging: Tray Package / Case: 80-LBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 3µm x 3µm Active Pixel Array: 1928H x 1088V Supplier Device Package: 80-IBGA (10x10) Part Status: Active Frames per Second: 60.0 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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AR0237ATSC12XUEA0-DRBR | onsemi |
![]() Packaging: Tray Package / Case: 80-LBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 3µm x 3µm Active Pixel Array: 1928H x 1088V Supplier Device Package: 80-IBGA (10x10) Part Status: Active Frames per Second: 60.0 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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FDG6304P-F169 | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FDG6304P-X | onsemi | Description: INTEGRATED CIRCUIT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FGD3N60LSDTM-T | onsemi |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 234 ns Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: 40ns/600ns Switching Energy: 250µJ (on), 1mJ (off) Test Condition: 480V, 3A, 470Ohm, 10V Gate Charge: 12.5 nC Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 25 A Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MT9D112D00STCK15AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MT9D113D00STCK25AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MT9D115D00STCK25AC1-200 | onsemi |
![]() Packaging: Bulk Package / Case: Die Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 1.75µm x 1.75µm Active Pixel Array: 1600H x 1200V Supplier Device Package: Die Part Status: Obsolete Frames per Second: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MT9M113D00STCK24AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MT9P017D00STCC48AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MT9P111D00STCK28AC1-200 | onsemi |
![]() Packaging: Bulk Package / Case: Die Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 1.4µm x 1.4µm Active Pixel Array: 2592H x 1944V Supplier Device Package: Die Part Status: Obsolete Frames per Second: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MT9T111D00STCK26AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NIS5132MN1TXG-L701 | onsemi |
![]() Packaging: Bulk Package / Case: 10-VFDFN Exposed Pad Sensing Method: High-Side Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 9V ~ 18V Current - Output: 3.6A Operating Temperature: -40°C ~ 150°C Supplier Device Package: 10-DFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD5111PFCT5G | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN53526UC00X | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 15-UFBGA, WLCSP Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.4MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 15-WLCSP (2.02x1.31) Synchronous Rectifier: Yes Voltage - Output (Max): 0.6V Voltage - Input (Min): 2.5V Voltage - Output (Min/Fixed): 0.6V Part Status: Active |
на замовлення 949 шт: термін постачання 21-31 дні (днів) |
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FAN53526UC89X | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 15-UFBGA, WLCSP Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.4MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 15-WLCSP (2.02x1.31) Synchronous Rectifier: Yes Voltage - Output (Max): 1.15V Voltage - Input (Min): 2.5V Voltage - Output (Min/Fixed): 1.15V Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FFG1040UC003X | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 12-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion Supplier Device Package: 12-WLCSP (2.23x1.46) Fault Protection: Over Current, Over Temperature, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP339BFCT2G | onsemi |
![]() Features: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 18mOhm Input Type: Non-Inverting Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 6-WLCSP (1.0x1.5) Fault Protection: Reverse Current |
на замовлення 11228 шт: термін постачання 21-31 дні (днів) |
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15GN03CA-TB-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13dB @ 0.4GHz Power - Max: 200mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz Supplier Device Package: 3-CP Part Status: Active |
на замовлення 2680 шт: термін постачання 21-31 дні (днів) |
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15GN03MA-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13dB @ 0.4GHz Power - Max: 400mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz Supplier Device Package: 3-MCP Part Status: Active |
на замовлення 48549 шт: термін постачання 21-31 дні (днів) |
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1N4006FFG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 2436 шт: термін постачання 21-31 дні (днів) |
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1N4007FFG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 2407 шт: термін постачання 21-31 дні (днів) |
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1N5384BRLG | onsemi |
![]() Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 350 Ohms Supplier Device Package: Axial Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 122 V |
на замовлення 9688 шт: термін постачання 21-31 дні (днів) |
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1PMT5935BT1G | onsemi |
![]() Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 23 Ohms Supplier Device Package: Powermite Power - Max: 3.2 W Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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1SV263-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Diode Type: PIN - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: 3-MCP Current - Max: 50 mA Power Dissipation (Max): 100 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SV264-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: 3-MCP Current - Max: 50 mA Power Dissipation (Max): 100 mW |
на замовлення 4067 шт: термін постачання 21-31 дні (днів) |
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1SV267-TB-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: 3-CP Part Status: Obsolete Current - Max: 50 mA Power Dissipation (Max): 150 mW |
на замовлення 5721 шт: термін постачання 21-31 дні (днів) |
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2SA1593T-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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2SA2012-TD-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 420MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 3.5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA2039-TL-H | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 360MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SB1121S-TD-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 500 mW |
на замовлення 830 шт: термін постачання 21-31 дні (днів) |
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2SB1205S-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V Frequency - Transition: 320MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
на замовлення 659 шт: термін постачання 21-31 дні (днів) |
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2SB1302T-TD-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 320MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.3 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SB815-7-TB-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V Frequency - Transition: 250MHz Supplier Device Package: 3-CP Part Status: Active Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW |
на замовлення 2953 шт: термін постачання 21-31 дні (днів) |
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2SC4134S-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW |
на замовлення 519 шт: термін постачання 21-31 дні (днів) |
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2SC4135S-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 262 шт: термін постачання 21-31 дні (днів) |
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2SC5536A-TL-H | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-81 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 16dB Power - Max: 100mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 2V Frequency - Transition: 1.7GHz Noise Figure (dB Typ @ f): 1.8dB @ 150MHz Supplier Device Package: 3-SSFP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5964-TD-H | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 380MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3.5 W |
на замовлення 13493 шт: термін постачання 21-31 дні (днів) |
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2SD1624S-TD-H | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SD1628G-TD-H | onsemi |
Description: TRANS NPN 20V 5A PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SD1803S-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SD1803T-TL-H | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 12600 шт: термін постачання 21-31 дні (днів) |
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2SD1805G-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SD1816S-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V Frequency - Transition: 180MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 880 шт: термін постачання 21-31 дні (днів) |
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2SD1816S-TL-H | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V Frequency - Transition: 180MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 691 шт: термін постачання 21-31 дні (днів) |
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55GN01MA-TL-E | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10dB @ 1GHz Power - Max: 400mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 4.5GHz ~ 5.5GHz Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Supplier Device Package: 3-MCP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74FST3257MNTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 16-QFN (2.5x3.5) Part Status: Active |
на замовлення 4241 шт: термін постачання 21-31 дні (днів) |
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74LVC244ADTR2G | onsemi |
Description: IC BUF NON-INVERT 3.6V 20TSSOP Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.2V ~ 3.6V Number of Bits per Element: 4 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
NVMFS5C426NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 41A/237A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 41A/237A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 131.23 грн |
NVMFS5C638NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 26A/133A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 26A/133A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
NVMFS6H800NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 172.19 грн |
AR0130CSSC00SPCA0-DPBR2 |
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Виробник: onsemi
Description: 1.2 MP 1/3 CIS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Grade: Automotive
Frames per Second: 60
Qualification: AEC-Q100
Description: 1.2 MP 1/3 CIS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Grade: Automotive
Frames per Second: 60
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
AR0134CSSM00SPCA0-DPBR2 |
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Виробник: onsemi
Description: 1.2 MP 1/3 GS CIS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 60.0
Description: 1.2 MP 1/3 GS CIS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 60.0
товару немає в наявності
В кошику
од. на суму грн.
AR0144CSSM00SUKA0-CPBR2 |
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Виробник: onsemi
Description: 1MP 1/4 CIS SO
Packaging: Tray
Package / Case: 69-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 69-ODCSP (5.55x5.57)
Frames per Second: 60
Description: 1MP 1/4 CIS SO
Packaging: Tray
Package / Case: 69-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 69-ODCSP (5.55x5.57)
Frames per Second: 60
товару немає в наявності
В кошику
од. на суму грн.
AR0230CSSC00SUEA0-DPBR2 |
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Виробник: onsemi
Description: 2 MP 1/3 CIS
Packaging: Tray
Package / Case: 80-BGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Frames per Second: 60.0
Description: 2 MP 1/3 CIS
Packaging: Tray
Package / Case: 80-BGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Frames per Second: 60.0
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 2299.25 грн |
10+ | 2057.49 грн |
AR0238CSSC12SHRA0-DP2 |
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Виробник: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Operating Temperature: -30°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Operating Temperature: -30°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 1975.71 грн |
10+ | 1585.45 грн |
AR1335CSSC11SMKA0-CP2 |
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Виробник: onsemi
Description: 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30.0
Description: 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30.0
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
50+ | 1305.30 грн |
ASX340AT2C00XPED0-DPBR2 |
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Виробник: onsemi
Description: VGA 1/4 SOC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.66V ~ 2.94V
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
Description: VGA 1/4 SOC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.66V ~ 2.94V
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
товару немає в наявності
В кошику
од. на суму грн.
MT9V024IA7XTM-DP2 |
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Виробник: onsemi
Description: VGA 1/3 GS CIS
Description: VGA 1/3 GS CIS
товару немає в наявності
В кошику
од. на суму грн.
FDB9506L-F085 |
Виробник: onsemi
Description: MOSFET N-CH 30V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 24.5A (Ta), 110A (Tc)
Part Status: Obsolete
Description: MOSFET N-CH 30V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 24.5A (Ta), 110A (Tc)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
AR0237ATSC12XUEA0-DPBR |
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Виробник: onsemi
Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Part Status: Active
Frames per Second: 60.0
Grade: Automotive
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Part Status: Active
Frames per Second: 60.0
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1587.43 грн |
5+ | 1365.23 грн |
10+ | 1306.78 грн |
25+ | 1162.58 грн |
40+ | 1133.29 грн |
80+ | 1093.84 грн |
440+ | 996.67 грн |
AR0237ATSC12XUEA0-DRBR |
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Виробник: onsemi
Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Part Status: Active
Frames per Second: 60.0
Grade: Automotive
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Part Status: Active
Frames per Second: 60.0
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1540.86 грн |
5+ | 1324.72 грн |
10+ | 1267.91 грн |
25+ | 1127.76 грн |
40+ | 1099.20 грн |
80+ | 1060.76 грн |
440+ | 966.18 грн |
FDG6304P-F169 |
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Виробник: onsemi
Description: INTEGRATED CIRCUIT
Description: INTEGRATED CIRCUIT
товару немає в наявності
В кошику
од. на суму грн.
FDG6304P-X |
Виробник: onsemi
Description: INTEGRATED CIRCUIT
Description: INTEGRATED CIRCUIT
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В кошику
од. на суму грн.
FGD3N60LSDTM-T |
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Виробник: onsemi
Description: IGBT 600V 6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
Description: IGBT 600V 6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
товару немає в наявності
В кошику
од. на суму грн.
MT9D115D00STCK25AC1-200 |
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Виробник: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.75µm x 1.75µm
Active Pixel Array: 1600H x 1200V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.75µm x 1.75µm
Active Pixel Array: 1600H x 1200V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
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В кошику
од. на суму грн.
MT9P111D00STCK28AC1-200 |
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Виробник: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
товару немає в наявності
В кошику
од. на суму грн.
NIS5132MN1TXG-L701 |
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Виробник: onsemi
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Bulk
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Bulk
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
товару немає в наявності
В кошику
од. на суму грн.
ESD5111PFCT5G |
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Виробник: onsemi
Description: TVS DIODE 3.3VWM 6.5VC 2WLCSP
Description: TVS DIODE 3.3VWM 6.5VC 2WLCSP
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В кошику
од. на суму грн.
FAN53526UC00X |
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Виробник: onsemi
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Cut Tape (CT)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 0.6V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Cut Tape (CT)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 0.6V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
на замовлення 949 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 127.30 грн |
10+ | 76.10 грн |
25+ | 63.87 грн |
100+ | 46.93 грн |
250+ | 40.54 грн |
500+ | 36.60 грн |
FAN53526UC89X |
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Виробник: onsemi
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Cut Tape (CT)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.15V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.15V
Part Status: Active
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Cut Tape (CT)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.15V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.15V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 124.20 грн |
10+ | 74.15 грн |
25+ | 62.13 грн |
100+ | 45.61 грн |
250+ | 39.37 грн |
500+ | 35.53 грн |
1000+ | 31.78 грн |
FFG1040UC003X |
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Виробник: onsemi
Description: IC BATT MON LI-ION 1CELL 12WLCSP
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-WLCSP (2.23x1.46)
Fault Protection: Over Current, Over Temperature, Over Voltage
Description: IC BATT MON LI-ION 1CELL 12WLCSP
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-WLCSP (2.23x1.46)
Fault Protection: Over Current, Over Temperature, Over Voltage
товару немає в наявності
В кошику
од. на суму грн.
NCP339BFCT2G |
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Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.0x1.5)
Fault Protection: Reverse Current
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.0x1.5)
Fault Protection: Reverse Current
на замовлення 11228 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 77.62 грн |
10+ | 45.37 грн |
25+ | 37.67 грн |
100+ | 27.18 грн |
250+ | 23.16 грн |
500+ | 20.69 грн |
1000+ | 18.31 грн |
15GN03CA-TB-E |
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Виробник: onsemi
Description: RF TRANS NPN 10V 1.5GHZ 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-CP
Part Status: Active
Description: RF TRANS NPN 10V 1.5GHZ 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-CP
Part Status: Active
на замовлення 2680 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 30.27 грн |
14+ | 21.83 грн |
100+ | 13.61 грн |
500+ | 8.74 грн |
1000+ | 6.72 грн |
15GN03MA-TL-E |
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Виробник: onsemi
Description: RF TRANS NPN 10V 1.5GHZ 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 400mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-MCP
Part Status: Active
Description: RF TRANS NPN 10V 1.5GHZ 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 400mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-MCP
Part Status: Active
на замовлення 48549 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.17 грн |
15+ | 20.33 грн |
100+ | 12.18 грн |
500+ | 10.58 грн |
1000+ | 7.20 грн |
1N4006FFG |
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Виробник: onsemi
Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 2436 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 34.16 грн |
15+ | 20.41 грн |
100+ | 12.92 грн |
500+ | 9.10 грн |
1000+ | 8.13 грн |
1N4007FFG |
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Виробник: onsemi
Description: DIODE STANDARD 1000V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 2407 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
31+ | 10.09 грн |
46+ | 6.58 грн |
100+ | 4.84 грн |
500+ | 3.24 грн |
1000+ | 2.97 грн |
1N5384BRLG |
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Виробник: onsemi
Description: DIODE ZENER 160V 5W AXIAL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Description: DIODE ZENER 160V 5W AXIAL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
на замовлення 9688 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
29+ | 10.87 грн |
31+ | 9.87 грн |
1PMT5935BT1G |
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Виробник: onsemi
Description: DIODE ZENER 27V 3.2W POWERMITE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: Powermite
Power - Max: 3.2 W
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V
Description: DIODE ZENER 27V 3.2W POWERMITE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: Powermite
Power - Max: 3.2 W
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 38.81 грн |
10+ | 33.19 грн |
100+ | 25.32 грн |
500+ | 19.85 грн |
1000+ | 18.37 грн |
1SV263-TL-E |
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Виробник: onsemi
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
товару немає в наявності
В кошику
од. на суму грн.
1SV264-TL-E |
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Виробник: onsemi
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
на замовлення 4067 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.17 грн |
17+ | 18.24 грн |
100+ | 16.54 грн |
500+ | 11.73 грн |
1000+ | 10.40 грн |
1SV267-TB-E |
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Виробник: onsemi
Description: RF DIODE PIN 50V 150MW 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 150 mW
Description: RF DIODE PIN 50V 150MW 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 150 mW
на замовлення 5721 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 43.47 грн |
12+ | 25.86 грн |
100+ | 16.54 грн |
500+ | 11.73 грн |
1000+ | 10.51 грн |
2SA1593T-TL-E |
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Виробник: onsemi
Description: TRANS PNP 100V 2A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS PNP 100V 2A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 22 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 53.56 грн |
10+ | 44.55 грн |
2SA2012-TD-E |
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Виробник: onsemi
Description: TRANS PNP 30V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3.5 W
Description: TRANS PNP 30V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3.5 W
товару немає в наявності
В кошику
од. на суму грн.
2SA2039-TL-H |
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Виробник: onsemi
Description: TRANS PNP 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: TRANS PNP 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
товару немає в наявності
В кошику
од. на суму грн.
2SB1121S-TD-E |
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Виробник: onsemi
Description: TRANS PNP 25V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Description: TRANS PNP 25V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
на замовлення 830 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 45.80 грн |
10+ | 37.45 грн |
100+ | 26.02 грн |
500+ | 19.07 грн |
2SB1205S-TL-E |
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Виробник: onsemi
Description: TRANS PNP 20V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS PNP 20V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
на замовлення 659 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 91.60 грн |
10+ | 55.32 грн |
100+ | 36.49 грн |
2SB1302T-TD-E |
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Виробник: onsemi
Description: TRANS PNP 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
Description: TRANS PNP 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
товару немає в наявності
В кошику
од. на суму грн.
2SB815-7-TB-E |
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Виробник: onsemi
Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
на замовлення 2953 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 34.93 грн |
15+ | 20.63 грн |
100+ | 13.12 грн |
500+ | 9.24 грн |
1000+ | 8.25 грн |
2SC4134S-TL-E |
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Виробник: onsemi
Description: TRANS NPN 100V 1A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Description: TRANS NPN 100V 1A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
на замовлення 519 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 48.90 грн |
10+ | 41.26 грн |
100+ | 28.54 грн |
2SC4135S-TL-E |
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Виробник: onsemi
Description: TRANS NPN 100V 2A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 2A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 262 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 66.76 грн |
10+ | 55.69 грн |
100+ | 38.57 грн |
2SC5536A-TL-H |
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Виробник: onsemi
Description: RF TRANS NPN 12V 1.7GHZ 3-SSFP
Packaging: Cut Tape (CT)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 2V
Frequency - Transition: 1.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 150MHz
Supplier Device Package: 3-SSFP
Part Status: Obsolete
Description: RF TRANS NPN 12V 1.7GHZ 3-SSFP
Packaging: Cut Tape (CT)
Package / Case: SC-81
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 2V
Frequency - Transition: 1.7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 150MHz
Supplier Device Package: 3-SSFP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
2SC5964-TD-H |
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Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
Description: TRANS NPN 50V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 13493 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 62.88 грн |
10+ | 37.90 грн |
100+ | 24.58 грн |
500+ | 17.69 грн |
2SD1624S-TD-H |
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Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
2SD1628G-TD-H |
Виробник: onsemi
Description: TRANS NPN 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
Description: TRANS NPN 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
2SD1803S-TL-E |
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Виробник: onsemi
Description: TRANS NPN 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
2SD1803T-TL-H |
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Виробник: onsemi
Description: TRANS NPN 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 12600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 124.98 грн |
10+ | 76.24 грн |
100+ | 51.02 грн |
2SD1805G-TL-E |
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Виробник: onsemi
Description: TRANS NPN 20V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS NPN 20V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
2SD1816S-TL-E |
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Виробник: onsemi
Description: TRANS NPN 100V 4A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 4A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 880 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 97.81 грн |
10+ | 76.54 грн |
100+ | 59.54 грн |
2SD1816S-TL-H |
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Виробник: onsemi
Description: TRANS NPN 100V 4A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 4A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 691 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 60.55 грн |
10+ | 50.98 грн |
100+ | 35.30 грн |
55GN01MA-TL-E |
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Виробник: onsemi
Description: RF TRANS NPN 10V 5.5GHZ 3-MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB @ 1GHz
Power - Max: 400mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 4.5GHz ~ 5.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Supplier Device Package: 3-MCP
Description: RF TRANS NPN 10V 5.5GHZ 3-MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB @ 1GHz
Power - Max: 400mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 4.5GHz ~ 5.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Supplier Device Package: 3-MCP
товару немає в наявності
В кошику
од. на суму грн.
74FST3257MNTWG |
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Виробник: onsemi
Description: IC MUX/DEMUX 4 X 2:1 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-QFN (2.5x3.5)
Part Status: Active
Description: IC MUX/DEMUX 4 X 2:1 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-QFN (2.5x3.5)
Part Status: Active
на замовлення 4241 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 76.07 грн |
10+ | 43.36 грн |
25+ | 36.00 грн |
100+ | 26.17 грн |
250+ | 22.53 грн |
500+ | 20.34 грн |
1000+ | 18.22 грн |
74LVC244ADTR2G |
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Part Status: Obsolete
Description: IC BUF NON-INVERT 3.6V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.