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MBR0520LT1H MBR0520LT1H onsemi Description: DIODE SCHOTTKY 20V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
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MBR0530T1H MBR0530T1H onsemi Description: DIODE SCHOTTKY 30V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 130 µA @ 30 V
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MBR0540T1H MBR0540T1H onsemi Description: DIODE SCHOTTKY 40V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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MBR1045H MBR1045H onsemi Description: DIODE SCHOTTKY 45V 10A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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MBR1060H MBR1060H onsemi MBR1035%20SERIES_M2103.pdf Description: DIODE SCHOTTKY 60V 10A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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MBR120LSFT1H MBR120LSFT1H onsemi Description: DIODE SCHOTTKY 20V 1A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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MBR130LSFT1H MBR130LSFT1H onsemi Description: DIODE SCHOTTKY 30V 1A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBR130T1H MBR130T1H onsemi Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
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MBR140SFT1H MBR140SFT1H onsemi Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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MBR1545CTH MBR1545CTH onsemi Description: DIODE ARRAY SCHOT 45V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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MBR16100CTH MBR16100CTH onsemi Description: DIODE ARR SCHOTT 100V 8A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBR1645H MBR1645H onsemi Description: DIODE SCHOTTKY 45V 16A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 16
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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MBR2045CTH MBR2045CTH onsemi Description: DIODE ARRAY SCHOT 45V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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MBR20L45CTH MBR20L45CTH onsemi Description: DIODE SCHOTTKY
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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MBR230LSFT1H MBR230LSFT1H onsemi Description: DIODE SCHOTTKY 30V 2A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBR40250TH MBR40250TH onsemi Description: DIODE SCHOTTKY 250V 40A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 40 A
Current - Reverse Leakage @ Vr: 250 µA @ 250 V
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MBR41H100CTH MBR41H100CTH onsemi MBR41H100CT_NRVBB41H100CT_Series_Rev9_Jan2015.pdf Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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MBRA210ET3H MBRA210ET3H onsemi Description: DIODE SCHOTTKY 10V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 10 V
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MBRA210LT3H MBRA210LT3H onsemi Description: DIODE SCHOTTKY 10V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 µA @ 10 V
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MBRA340T3H MBRA340T3H onsemi Description: DIODE SCHOTTKY 40V 3A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
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MBRB2515LT4H MBRB2515LT4H onsemi Description: DIODE SCHOTTKY 15V 25A D2PAK
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MBRB41H100CT-1H onsemi MBR41H100CT_NRVBB41H100CT_Series_Rev9_Jan2015.pdf Description: DIODE ARRAY SCHOT 100V 20A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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MBRD660CTT4H MBRD660CTT4H onsemi Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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MBRD835LT4H MBRD835LT4H onsemi Description: DIODE SCHOTTKY 35V 8A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V
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MBRM120ET1H MBRM120ET1H onsemi Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Bulk
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 595 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 20 V
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MBRM120LT3H MBRM120LT3H onsemi Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Bulk
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 20 V
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MBRM140T3H MBRM140T3H onsemi Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Bulk
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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MBRS1100T3H MBRS1100T3H onsemi Description: DIODE SCHOTTKY 100V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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MBRS130LT3H MBRS130LT3H onsemi Description: DIODE SCHOTTKY 30V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBRS130T3H MBRS130T3H onsemi Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBRS140T3H MBRS140T3H onsemi Description: DIODE SCHOTTKY 40V 1A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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MBRS190T3H MBRS190T3H onsemi Description: DIODE SCHOTTKY 90V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
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MBRS2040LT3H MBRS2040LT3H onsemi Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
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MBRS240LT3H MBRS240LT3H onsemi Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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MBRS340T3H MBRS340T3H onsemi Description: DIODE SCHOTTKY 40V 4A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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MBRS360T3H MBRS360T3H onsemi Description: DIODE SCHOTTKY 60V 4A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
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MT9E013D00STCC4BAC1-200 onsemi Description: IC IMMAGE SENSOR CMOS
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 3264H x 2448V
Part Status: Obsolete
Frames per Second: 15
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MT9E013D00STCC4BAC1-200-R4 onsemi Description: IC IMMAGE SENSOR CMOS
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 3264H x 2448V
Part Status: Obsolete
Frames per Second: 15
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MUR1510H MUR1510H onsemi Description: DIODE GEN PURP 100V 15A TO220-2
Packaging: Tray
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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MUR1560H MUR1560H onsemi Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tray
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MUR1620CTRH MUR1620CTRH onsemi Description: DIODE ARRAY GP 200V 8A TO-220
Packaging: Tray
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MUR460RLH MUR460RLH onsemi Description: DIODE STANDARD 600V 4A AXIAL
Packaging: Tray
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MUR8100EH MUR8100EH onsemi Description: DIODE STANDARD 1000V 8A TO2202
Packaging: Tray
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
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MURA120T3H MURA120T3H onsemi Description: DIODE GEN PURP 200V 2A SMA
Packaging: Tray
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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MURA160T3H MURA160T3H onsemi Description: DIODE GEN PURP 600V 2A SMA
Packaging: Tray
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MURF860H onsemi Description: DIODE GP 600V 8A TO220-2FP
Packaging: Tray
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MURS120T3H MURS120T3H onsemi Description: DIODE STANDARD 200V 2A SMB
Packaging: Tray
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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MURS140T3H MURS140T3H onsemi Description: DIODE STANDARD 400V 2A SMB
Packaging: Tray
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MURS160T3H MURS160T3H onsemi Description: DIODE STANDARD 600V 2A SMB
Packaging: Tray
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MURS320T3H MURS320T3H onsemi Description: DIODE GEN PURP 200V 4A SMC
Packaging: Tray
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MURS360T3H MURS360T3H onsemi Description: DIODE STANDARD 600V 4A SMC
Packaging: Tray
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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NTST30100CTH NTST30100CTH onsemi NTSx30100CT_G_-1G_Rev7_Jul2016.pdf Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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NJVMJD122T4G NJVMJD122T4G onsemi mjd122-d.pdf Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+23.71 грн
Мінімальне замовлення: 2500
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NJVMJD122T4G NJVMJD122T4G onsemi mjd122-d.pdf Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2533 шт:
термін постачання 21-31 дні (днів)
4+90.04 грн
10+54.64 грн
100+36.12 грн
500+26.44 грн
1000+24.03 грн
Мінімальне замовлення: 4
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NJVMJD31CT4G NJVMJD31CT4G onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+18.99 грн
Мінімальне замовлення: 2500
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NJVMJD31CT4G NJVMJD31CT4G onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Qualification: AEC-Q101
на замовлення 3796 шт:
термін постачання 21-31 дні (днів)
5+74.52 грн
10+44.85 грн
100+29.42 грн
500+21.36 грн
1000+19.34 грн
Мінімальне замовлення: 5
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NJVMJD44H11T4G NJVMJD44H11T4G onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Qualification: AEC-Q101
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NJVMJD44H11T4G NJVMJD44H11T4G onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 940 шт:
термін постачання 21-31 дні (днів)
4+91.60 грн
10+55.54 грн
100+36.76 грн
500+26.92 грн
Мінімальне замовлення: 4
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NJVMJD45H11T4G NJVMJD45H11T4G onsemi mjd44h11-d.pdf Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
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NJVMJD45H11T4G NJVMJD45H11T4G onsemi mjd44h11-d.pdf Description: TRANS PNP 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1457 шт:
термін постачання 21-31 дні (днів)
3+106.35 грн
10+64.81 грн
100+43.12 грн
500+31.71 грн
1000+28.90 грн
Мінімальне замовлення: 3
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MBR0520LT1H
MBR0520LT1H
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
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MBR0530T1H
MBR0530T1H
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 130 µA @ 30 V
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MBR0540T1H
MBR0540T1H
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 500MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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MBR1045H
MBR1045H
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 10A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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MBR1060H MBR1035%20SERIES_M2103.pdf
MBR1060H
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 10A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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MBR120LSFT1H
MBR120LSFT1H
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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MBR130LSFT1H
MBR130LSFT1H
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 380 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBR130T1H
MBR130T1H
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
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MBR140SFT1H
MBR140SFT1H
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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MBR1545CTH
MBR1545CTH
Виробник: onsemi
Description: DIODE ARRAY SCHOT 45V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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MBR16100CTH
MBR16100CTH
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 8A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBR1645H
MBR1645H
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 16A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 16
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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MBR2045CTH
MBR2045CTH
Виробник: onsemi
Description: DIODE ARRAY SCHOT 45V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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MBR20L45CTH
MBR20L45CTH
Виробник: onsemi
Description: DIODE SCHOTTKY
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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MBR230LSFT1H
MBR230LSFT1H
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBR40250TH
MBR40250TH
Виробник: onsemi
Description: DIODE SCHOTTKY 250V 40A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 40 A
Current - Reverse Leakage @ Vr: 250 µA @ 250 V
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MBR41H100CTH MBR41H100CT_NRVBB41H100CT_Series_Rev9_Jan2015.pdf
MBR41H100CTH
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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MBRA210ET3H
MBRA210ET3H
Виробник: onsemi
Description: DIODE SCHOTTKY 10V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 10 V
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MBRA210LT3H
MBRA210LT3H
Виробник: onsemi
Description: DIODE SCHOTTKY 10V 2A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 µA @ 10 V
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MBRA340T3H
MBRA340T3H
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 3A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
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MBRB2515LT4H
MBRB2515LT4H
Виробник: onsemi
Description: DIODE SCHOTTKY 15V 25A D2PAK
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MBRB41H100CT-1H MBR41H100CT_NRVBB41H100CT_Series_Rev9_Jan2015.pdf
Виробник: onsemi
Description: DIODE ARRAY SCHOT 100V 20A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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MBRD660CTT4H
MBRD660CTT4H
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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MBRD835LT4H
MBRD835LT4H
Виробник: onsemi
Description: DIODE SCHOTTKY 35V 8A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 35 V
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MBRM120ET1H
MBRM120ET1H
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Bulk
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 595 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 20 V
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MBRM120LT3H
MBRM120LT3H
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Bulk
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 20 V
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MBRM140T3H
MBRM140T3H
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Bulk
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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MBRS1100T3H
MBRS1100T3H
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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MBRS130LT3H
MBRS130LT3H
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBRS130T3H
MBRS130T3H
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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MBRS140T3H
MBRS140T3H
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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MBRS190T3H
MBRS190T3H
Виробник: onsemi
Description: DIODE SCHOTTKY 90V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
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MBRS2040LT3H
MBRS2040LT3H
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
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MBRS240LT3H
MBRS240LT3H
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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MBRS340T3H
MBRS340T3H
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 4A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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MBRS360T3H
MBRS360T3H
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 4A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
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MT9E013D00STCC4BAC1-200
Виробник: onsemi
Description: IC IMMAGE SENSOR CMOS
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 3264H x 2448V
Part Status: Obsolete
Frames per Second: 15
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MT9E013D00STCC4BAC1-200-R4
Виробник: onsemi
Description: IC IMMAGE SENSOR CMOS
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 3264H x 2448V
Part Status: Obsolete
Frames per Second: 15
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MUR1510H
MUR1510H
Виробник: onsemi
Description: DIODE GEN PURP 100V 15A TO220-2
Packaging: Tray
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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MUR1560H
MUR1560H
Виробник: onsemi
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tray
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MUR1620CTRH
MUR1620CTRH
Виробник: onsemi
Description: DIODE ARRAY GP 200V 8A TO-220
Packaging: Tray
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MUR460RLH
MUR460RLH
Виробник: onsemi
Description: DIODE STANDARD 600V 4A AXIAL
Packaging: Tray
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MUR8100EH
MUR8100EH
Виробник: onsemi
Description: DIODE STANDARD 1000V 8A TO2202
Packaging: Tray
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
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MURA120T3H
MURA120T3H
Виробник: onsemi
Description: DIODE GEN PURP 200V 2A SMA
Packaging: Tray
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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MURA160T3H
MURA160T3H
Виробник: onsemi
Description: DIODE GEN PURP 600V 2A SMA
Packaging: Tray
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MURF860H
Виробник: onsemi
Description: DIODE GP 600V 8A TO220-2FP
Packaging: Tray
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MURS120T3H
MURS120T3H
Виробник: onsemi
Description: DIODE STANDARD 200V 2A SMB
Packaging: Tray
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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MURS140T3H
MURS140T3H
Виробник: onsemi
Description: DIODE STANDARD 400V 2A SMB
Packaging: Tray
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MURS160T3H
MURS160T3H
Виробник: onsemi
Description: DIODE STANDARD 600V 2A SMB
Packaging: Tray
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MURS320T3H
MURS320T3H
Виробник: onsemi
Description: DIODE GEN PURP 200V 4A SMC
Packaging: Tray
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MURS360T3H
MURS360T3H
Виробник: onsemi
Description: DIODE STANDARD 600V 4A SMC
Packaging: Tray
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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NTST30100CTH NTSx30100CT_G_-1G_Rev7_Jul2016.pdf
NTST30100CTH
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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NJVMJD122T4G mjd122-d.pdf
NJVMJD122T4G
Виробник: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+23.71 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NJVMJD122T4G mjd122-d.pdf
NJVMJD122T4G
Виробник: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2533 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+90.04 грн
10+54.64 грн
100+36.12 грн
500+26.44 грн
1000+24.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NJVMJD31CT4G mjd31-d.pdf
NJVMJD31CT4G
Виробник: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+18.99 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NJVMJD31CT4G mjd31-d.pdf
NJVMJD31CT4G
Виробник: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Qualification: AEC-Q101
на замовлення 3796 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+74.52 грн
10+44.85 грн
100+29.42 грн
500+21.36 грн
1000+19.34 грн
Мінімальне замовлення: 5
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NJVMJD44H11T4G mjd44h11-d.pdf
NJVMJD44H11T4G
Виробник: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Qualification: AEC-Q101
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NJVMJD44H11T4G mjd44h11-d.pdf
NJVMJD44H11T4G
Виробник: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.60 грн
10+55.54 грн
100+36.76 грн
500+26.92 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NJVMJD45H11T4G mjd44h11-d.pdf
NJVMJD45H11T4G
Виробник: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
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NJVMJD45H11T4G mjd44h11-d.pdf
NJVMJD45H11T4G
Виробник: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1457 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+106.35 грн
10+64.81 грн
100+43.12 грн
500+31.71 грн
1000+28.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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