| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NCV8187AMT120TAG | onsemi |
Description: IC REG LINEAR 1.2V 1.2A 6WDFNPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.2A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WDFN (2x2) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable, Power Good Grade: Automotive PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.495V @ 1.2A Protection Features: Over Current, Over Temperature, Soft Start Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| NIS5021MT2TXG | onsemi |
Description: IC ELECTRONIC FUSE 10WDFNPackaging: Tape & Reel (TR) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 18V Current - Output: 12A Operating Temperature: -40°C ~ 150°C Supplier Device Package: 10-WDFN (4x4) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTTFS010N10MCLTAG | onsemi |
Description: MOSFET N-CH 100V 10.7A/50A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Power Dissipation (Max): 2.3W (Ta),52W (Tc) Vgs(th) (Max) @ Id: 3V @ 85µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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NVB150N65S3F | onsemi |
Description: MOSFET N-CH 650V 24A D2PAK-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NVMFD6H852NLT1G | onsemi |
Description: MOSFET N-CH 80V 7A/25A 8DFN DLPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 26µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMFD6H852NLWFT1G | onsemi |
Description: MOSFET N-CH 80V 7A/25A 8DFN DLPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 26µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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NVMJS1D5N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 38A/200A 8LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMJS2D5N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 31A/164A 8LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 2V @ 135µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMYS011N04CTWG | onsemi |
Description: MOSFET N-CH 40V 13A/35A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NVMYS014N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 12A/36A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NVMYS021N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 9.8A/27A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 16µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMYS025N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V Power Dissipation (Max): 3.8W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2V @ 13µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NVMYS3D3N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 26A/133A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NVMYS5D3N04CTWG | onsemi |
Description: MOSFET N-CH 40V 19A/71A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVMYS7D3N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 17A/52A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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NVTFS010N10MCLTAG | onsemi |
Description: MOSFET N-CH 100V 11.7A/57.8 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 85µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FUSB308BVMPX | onsemi |
Description: USB TYPEC CONTROLLERPackaging: Tape & Reel (TR) Package / Case: 16-WFQFN Exposed Pad Function: Controller Interface: USB Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.8V ~ 5.5V Current - Supply: 560mA Protocol: USB Standards: USB 3.1 Supplier Device Package: 16-WQFN (3x3) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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FUSB308BVMPX | onsemi |
Description: USB TYPEC CONTROLLERPackaging: Cut Tape (CT) Package / Case: 16-WFQFN Exposed Pad Function: Controller Interface: USB Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.8V ~ 5.5V Current - Supply: 560mA Protocol: USB Standards: USB 3.1 Supplier Device Package: 16-WQFN (3x3) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 32467 шт: термін постачання 21-31 дні (днів) |
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FCMT360N65S3 | onsemi |
Description: MOSFET N-CH 650V 10A 4PQFNPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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FSB50250BS | onsemi |
Description: IPM 500V 2APackaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 1.9 A Voltage: 500 V |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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NCP1095DBR2 | onsemi |
Description: IC POE CNTRL 1 CHANNEL 16TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Controller (PD) Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 0V ~ 57V Current - Supply: 336.7µA Internal Switch(s): Yes Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt Supplier Device Package: 16-TSSOP Auxiliary Sense: Yes Number of Channels: 1 Power - Max: 90 W |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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NCP1096PAR2G | onsemi |
Description: IC POE CNTRL 1 CHANNEL 16TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Type: Controller (PD), DC/DC Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 0V ~ 57V Current - Supply: 336.7µA Internal Switch(s): Yes Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt Supplier Device Package: 16-TSSOP-EP Auxiliary Sense: Yes Number of Channels: 1 Power - Max: 90 W |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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NCP171AMX180175TCG | onsemi |
Description: IC REG LINEAR 1.8V 80MA 4-XDFNPackaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 2 Supplier Device Package: 4-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 65dB (1kHz) Voltage Dropout (Max): 0.11V @ 80mA Protection Features: Over Current, Over Temperature |
на замовлення 1825 шт: термін постачання 21-31 дні (днів) |
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NCV8406BDTRKG | onsemi |
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAKPackaging: Cut Tape (CT) Features: Auto Restart Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 185mOhm Input Type: Non-Inverting Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7A Ratio - Input:Output: 1:1 Supplier Device Package: DPAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3444 шт: термін постачання 21-31 дні (днів) |
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NTMYS014N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 12A/36A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
на замовлення 8865 шт: термін постачання 21-31 дні (днів) |
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NTMYS025N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V Power Dissipation (Max): 3.8W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2V @ 13µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
на замовлення 1389 шт: термін постачання 21-31 дні (днів) |
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NTMYS2D4N04CTWG | onsemi |
Description: MOSFET N-CH 40V 30A/138A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 2850 шт: термін постачання 21-31 дні (днів) |
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NTMYS7D3N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 17A/52A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
на замовлення 1261 шт: термін постачання 21-31 дні (днів) |
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NTMYS8D0N04CTWG | onsemi |
Description: MOSFET N-CH 40V 16A/49A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| LC898150XH-MH | onsemi |
Description: IC MOTOR DVR OIS AF 21WLCSP Packaging: Tape & Reel (TR) Package / Case: 21-XFBGA, WLCSP Mounting Type: Surface Mount Function: Driver Current - Output: 130mA Interface: PWM, SPI Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.6V ~ 3.3V Applications: General Purpose Voltage - Load: 1.7V ~ 3.3V Supplier Device Package: 21-WLCSP (1.17x2.77) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MJD122RLG | onsemi |
Description: TRANS NPN DARL 100V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Frequency - Transition: 4MHz Supplier Device Package: DPAK Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD127RLG | onsemi |
Description: TRANS PNP DARL 100V 8A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Frequency - Transition: 4MHz Supplier Device Package: DPAK Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD2955RLG | onsemi |
Description: TRANS PNP 60V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP4371AADDR2G | onsemi |
Description: IC BATT CHG 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: USB Operating Temperature: -40°C ~ 125°C (TJ) Supplier Device Package: 8-SOIC Fault Protection: Short Circuit Voltage - Supply (Max): 28V Battery Pack Voltage: 12V Current - Charging: Constant |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP4371BBCDDR2G | onsemi |
Description: IC BATT CHG 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: USB Operating Temperature: -40°C ~ 125°C (TJ) Supplier Device Package: 8-SOIC Fault Protection: Short Circuit Voltage - Supply (Max): 28V Battery Pack Voltage: 20V Current - Charging: Constant |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NL27WZ16DBVT1G | onsemi |
Description: IC BUFFER NON-INVERT 5.5VPackaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: SC-74 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NRVBS260T3G-RG01 | onsemi |
Description: DIODE SCHOTTKY 60V 2A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVBSS26T3G-RG01 | onsemi |
Description: DIODE SCHOTTKY 60V 2A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVUS2BA | onsemi |
Description: DIODE GEN PURP 100V 1.5A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSS60200DMTTBG | onsemi |
Description: TRANS PNP 60V 2A 6WDFNPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SBRA8160T3G-VF01 | onsemi |
Description: DIODE SCHOTTKY 60V 1A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZESD5Z3.3T5G | onsemi |
Description: TVS DIODE 3.3VWM 14.1VC SOD523Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 105pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SOD-523 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 14.1V Power - Peak Pulse: 158W Power Line Protection: No Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| AR0230CSSC12SUEA0-DP | onsemi |
Description: IMAGE SENSOR CMOS IBGA80 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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AR0237CSSC12SHRA0-DP | onsemi |
Description: IMAGE SENSOR 2MP CMOS 48PLCC Packaging: Tray Package / Case: 48-PLCC Type: CMOS Operating Temperature: -30°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V, 2.5V ~ 3.1V Pixel Size: 3µm x 3µm Active Pixel Array: 1928H x 1088V Supplier Device Package: 48-PLCC (11.43x11.43) Frames per Second: 60 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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HCPL2611SM | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 8-SMDPackaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD122-1G | onsemi |
Description: TRANS NPN DARL 100V 8A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Frequency - Transition: 4MHz Supplier Device Package: DPAK Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MOC3053SR2M | onsemi |
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMDPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.18V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 540µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 6mA Part Status: Active Number of Channels: 1 Voltage - Off State: 600 V Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MARS1-AR0233ATSCS-GEVB | onsemi |
Description: EVAL BOARD IMAGE SENSOR Packaging: Box Sensor Type: Image Sensor Utilized IC / Part: AR0233AT Supplied Contents: Board(s) Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| MARS1-KSZ8081MNX-GEVB | onsemi |
Description: EVAL BOARD IMAGE SENSOR Packaging: Box Sensor Type: Image Sensor Supplied Contents: Board(s) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MARS1-MAX9295A-GEVK | onsemi | Description: EVAL BOARD IMAGE SENSOR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MARS1-MAX9296B-GEVB | onsemi | Description: EVAL BOARD IMAGE SENSOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SPSDEVK1-CER-GEVK | onsemi | Description: EVAL SMART PASSIVE SENSOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SPSDEVK1-PCB-GEVK | onsemi | Description: EVAL SMART PASSIVE SENSOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SPSDEVK2MT-GEVK | onsemi | Description: EVAL SMART PASSIVE SENSOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SPSDEVK2-PCB-GEVK | onsemi | Description: EVAL SMART PASSIVE SENSOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SPSDEVK2-PET-GEVK | onsemi |
Description: EVAL SMART PASSIVE SENSOR Packaging: Box Type: RFID Reader Supplied Contents: Board(s), Cable(s), Power Supply, Accessories Contents: Board(s), Cable(s), Power Supply, Accessories |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SPSPRDA2-P | onsemi |
Description: UHF ANTENNA RF-SMA Packaging: Box Mounting Type: Chassis Mount Frequency Range: 865MHz ~ 928MHz Applications: General Purpose Gain: 6dBi Termination: RP-SMA Number of Bands: 1 VSWR: 2 Antenna Type: Module Frequency Group: UHF (300MHz ~ 1GHz) Frequency (Center/Band): 896MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDD4141-F085P | onsemi |
Description: MOSFET P-CH 40V 10.8A/50A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12.7A, 10V Power Dissipation (Max): 2.4W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FSL538HPG | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7DIP |
на замовлення 5988 шт: термін постачання 21-31 дні (днів) |
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NCP105AMX180TBG | onsemi |
Description: IC REG LINEAR 1.8V 150MA 4XDFNPackaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Obsolete PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.33V @ 150mA Protection Features: Current Limit |
товару немає в наявності |
В кошику од. на суму грн. |
| NCV8187AMT120TAG |
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Виробник: onsemi
Description: IC REG LINEAR 1.2V 1.2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.495V @ 1.2A
Protection Features: Over Current, Over Temperature, Soft Start
Qualification: AEC-Q100
Description: IC REG LINEAR 1.2V 1.2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.495V @ 1.2A
Protection Features: Over Current, Over Temperature, Soft Start
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 20.03 грн |
| NIS5021MT2TXG |
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Виробник: onsemi
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 18V
Current - Output: 12A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-WDFN (4x4)
Part Status: Obsolete
Description: IC ELECTRONIC FUSE 10WDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 18V
Current - Output: 12A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-WDFN (4x4)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| NTTFS010N10MCLTAG |
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Виробник: onsemi
Description: MOSFET N-CH 100V 10.7A/50A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.3W (Ta),52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Description: MOSFET N-CH 100V 10.7A/50A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.3W (Ta),52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 47.76 грн |
| 3000+ | 45.24 грн |
| 4500+ | 45.09 грн |
| NVB150N65S3F |
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Виробник: onsemi
Description: MOSFET N-CH 650V 24A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 24A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1999 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 138.89 грн |
| NVMFD6H852NLT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 7A/25A 8DFN DL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 7A/25A 8DFN DL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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| NVMFD6H852NLWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 7A/25A 8DFN DL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 7A/25A 8DFN DL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 43.87 грн |
| 3000+ | 39.16 грн |
| 4500+ | 37.95 грн |
| NVMJS1D5N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 38A/200A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 38A/200A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
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| NVMJS2D5N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 31A/164A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 31A/164A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| NVMYS011N04CTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 13A/35A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 13A/35A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 20µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 23.50 грн |
| 6000+ | 22.01 грн |
| 9000+ | 21.32 грн |
| 15000+ | 19.68 грн |
| NVMYS014N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 26.38 грн |
| 6000+ | 24.06 грн |
| 9000+ | 23.12 грн |
| 15000+ | 21.58 грн |
| NVMYS021N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 9.8A/27A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 9.8A/27A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
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од. на суму грн.
| NVMYS025N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
| NVMYS3D3N06CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 26A/133A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 51.12 грн |
| NVMYS5D3N04CTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 19A/71A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 19A/71A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 31.79 грн |
| 6000+ | 28.70 грн |
| NVMYS7D3N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 28.41 грн |
| 6000+ | 27.00 грн |
| 9000+ | 26.75 грн |
| NVTFS010N10MCLTAG |
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Виробник: onsemi
Description: MOSFET N-CH 100V 11.7A/57.8 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 11.7A/57.8 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 57.8 (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 77.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 85µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 42.41 грн |
| 3000+ | 39.60 грн |
| FUSB308BVMPX |
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Виробник: onsemi
Description: USB TYPEC CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 16-WQFN (3x3)
Part Status: Active
DigiKey Programmable: Not Verified
Description: USB TYPEC CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 16-WQFN (3x3)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 77.61 грн |
| FUSB308BVMPX |
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Виробник: onsemi
Description: USB TYPEC CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 16-WQFN (3x3)
Part Status: Active
DigiKey Programmable: Not Verified
Description: USB TYPEC CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.8V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 16-WQFN (3x3)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 32467 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 257.95 грн |
| 10+ | 158.32 грн |
| 25+ | 134.75 грн |
| 100+ | 101.44 грн |
| 250+ | 89.14 грн |
| 500+ | 81.59 грн |
| 1000+ | 74.02 грн |
| FCMT360N65S3 |
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Виробник: onsemi
Description: MOSFET N-CH 650V 10A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
Description: MOSFET N-CH 650V 10A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 191.20 грн |
| 10+ | 176.42 грн |
| 100+ | 147.90 грн |
| 500+ | 135.67 грн |
| FSB50250BS |
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Виробник: onsemi
Description: IPM 500V 2A
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 1.9 A
Voltage: 500 V
Description: IPM 500V 2A
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 1.9 A
Voltage: 500 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 540.63 грн |
| 10+ | 446.48 грн |
| 100+ | 372.08 грн |
| NCP1095DBR2 |
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Виробник: onsemi
Description: IC POE CNTRL 1 CHANNEL 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Controller (PD)
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 0V ~ 57V
Current - Supply: 336.7µA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Supplier Device Package: 16-TSSOP
Auxiliary Sense: Yes
Number of Channels: 1
Power - Max: 90 W
Description: IC POE CNTRL 1 CHANNEL 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Controller (PD)
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 0V ~ 57V
Current - Supply: 336.7µA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Supplier Device Package: 16-TSSOP
Auxiliary Sense: Yes
Number of Channels: 1
Power - Max: 90 W
на замовлення 17 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 225.81 грн |
| 10+ | 137.29 грн |
| NCP1096PAR2G |
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Виробник: onsemi
Description: IC POE CNTRL 1 CHANNEL 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PD), DC/DC
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 0V ~ 57V
Current - Supply: 336.7µA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Supplier Device Package: 16-TSSOP-EP
Auxiliary Sense: Yes
Number of Channels: 1
Power - Max: 90 W
Description: IC POE CNTRL 1 CHANNEL 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PD), DC/DC
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 0V ~ 57V
Current - Supply: 336.7µA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE), 802.3bt
Supplier Device Package: 16-TSSOP-EP
Auxiliary Sense: Yes
Number of Channels: 1
Power - Max: 90 W
на замовлення 22 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 286.80 грн |
| 10+ | 176.89 грн |
| NCP171AMX180175TCG |
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Виробник: onsemi
Description: IC REG LINEAR 1.8V 80MA 4-XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.11V @ 80mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 80MA 4-XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.11V @ 80mA
Protection Features: Over Current, Over Temperature
на замовлення 1825 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.75 грн |
| 10+ | 45.95 грн |
| 25+ | 41.46 грн |
| 100+ | 34.23 грн |
| 250+ | 32.00 грн |
| 500+ | 30.66 грн |
| 1000+ | 29.07 грн |
| NCV8406BDTRKG |
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Виробник: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 185mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 185mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3444 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 203.56 грн |
| 10+ | 123.25 грн |
| 25+ | 104.25 грн |
| 100+ | 77.71 грн |
| 250+ | 67.82 грн |
| 500+ | 61.75 грн |
| 1000+ | 55.72 грн |
| NTMYS014N06CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Description: MOSFET N-CH 60V 12A/36A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
на замовлення 8865 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 107.96 грн |
| 10+ | 68.96 грн |
| 100+ | 53.85 грн |
| 500+ | 39.99 грн |
| 1000+ | 36.83 грн |
| NTMYS025N06CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
на замовлення 1389 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 104.66 грн |
| 10+ | 69.28 грн |
| 100+ | 53.94 грн |
| 500+ | 38.39 грн |
| 1000+ | 35.11 грн |
| NTMYS2D4N04CTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 30A/138A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 40V 30A/138A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.46 грн |
| 10+ | 99.99 грн |
| 100+ | 79.33 грн |
| NTMYS7D3N04CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
на замовлення 1261 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 168.95 грн |
| 10+ | 104.12 грн |
| 100+ | 70.73 грн |
| 500+ | 52.95 грн |
| 1000+ | 48.63 грн |
| NTMYS8D0N04CTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 168.12 грн |
| 10+ | 103.57 грн |
| 100+ | 70.30 грн |
| 500+ | 52.61 грн |
| 1000+ | 48.32 грн |
| LC898150XH-MH |
Виробник: onsemi
Description: IC MOTOR DVR OIS AF 21WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Driver
Current - Output: 130mA
Interface: PWM, SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Applications: General Purpose
Voltage - Load: 1.7V ~ 3.3V
Supplier Device Package: 21-WLCSP (1.17x2.77)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DVR OIS AF 21WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Driver
Current - Output: 130mA
Interface: PWM, SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Applications: General Purpose
Voltage - Load: 1.7V ~ 3.3V
Supplier Device Package: 21-WLCSP (1.17x2.77)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
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| MJD122RLG |
Виробник: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
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| MJD127RLG |
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Виробник: onsemi
Description: TRANS PNP DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Description: TRANS PNP DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
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| MJD2955RLG |
Виробник: onsemi
Description: TRANS PNP 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
Description: TRANS PNP 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
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| NCP4371AADDR2G |
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Виробник: onsemi
Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 12V
Current - Charging: Constant
Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 12V
Current - Charging: Constant
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| NCP4371BBCDDR2G |
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Виробник: onsemi
Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 20V
Current - Charging: Constant
Description: IC BATT CHG 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 8-SOIC
Fault Protection: Short Circuit
Voltage - Supply (Max): 28V
Battery Pack Voltage: 20V
Current - Charging: Constant
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| NL27WZ16DBVT1G |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74
Part Status: Obsolete
Description: IC BUFFER NON-INVERT 5.5V
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74
Part Status: Obsolete
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| NRVBS260T3G-RG01 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
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| NRVBSS26T3G-RG01 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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| NRVUS2BA |
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Виробник: onsemi
Description: DIODE GEN PURP 100V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 100V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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| NSS60200DMTTBG |
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Виробник: onsemi
Description: TRANS PNP 60V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Description: TRANS PNP 60V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
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| SBRA8160T3G-VF01 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
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| SZESD5Z3.3T5G |
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Виробник: onsemi
Description: TVS DIODE 3.3VWM 14.1VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 14.1V
Power - Peak Pulse: 158W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 14.1VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 14.1V
Power - Peak Pulse: 158W
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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| AR0230CSSC12SUEA0-DP |
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Виробник: onsemi
Description: IMAGE SENSOR CMOS IBGA80
Description: IMAGE SENSOR CMOS IBGA80
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| AR0237CSSC12SHRA0-DP |
Виробник: onsemi
Description: IMAGE SENSOR 2MP CMOS 48PLCC
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60
Description: IMAGE SENSOR 2MP CMOS 48PLCC
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60
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| HCPL2611SM |
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Виробник: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV OPEN COLLECTOR 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
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| MJD122-1G |
Виробник: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
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| MOC3053SR2M |
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Виробник: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 6mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 6mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
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| MARS1-AR0233ATSCS-GEVB |
Виробник: onsemi
Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Utilized IC / Part: AR0233AT
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Utilized IC / Part: AR0233AT
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 24723.84 грн |
| MARS1-KSZ8081MNX-GEVB |
Виробник: onsemi
Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD IMAGE SENSOR
Packaging: Box
Sensor Type: Image Sensor
Supplied Contents: Board(s)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| MARS1-MAX9295A-GEVK |
Виробник: onsemi
Description: EVAL BOARD IMAGE SENSOR
Description: EVAL BOARD IMAGE SENSOR
товару немає в наявності
В кошику
од. на суму грн.
| MARS1-MAX9296B-GEVB |
Виробник: onsemi
Description: EVAL BOARD IMAGE SENSOR
Description: EVAL BOARD IMAGE SENSOR
товару немає в наявності
В кошику
од. на суму грн.
| SPSDEVK1-CER-GEVK |
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
Description: EVAL SMART PASSIVE SENSOR
товару немає в наявності
В кошику
од. на суму грн.
| SPSDEVK1-PCB-GEVK |
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
Description: EVAL SMART PASSIVE SENSOR
товару немає в наявності
В кошику
од. на суму грн.
| SPSDEVK2MT-GEVK |
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
Description: EVAL SMART PASSIVE SENSOR
товару немає в наявності
В кошику
од. на суму грн.
| SPSDEVK2-PCB-GEVK |
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
Description: EVAL SMART PASSIVE SENSOR
товару немає в наявності
В кошику
од. на суму грн.
| SPSDEVK2-PET-GEVK |
Виробник: onsemi
Description: EVAL SMART PASSIVE SENSOR
Packaging: Box
Type: RFID Reader
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Contents: Board(s), Cable(s), Power Supply, Accessories
Description: EVAL SMART PASSIVE SENSOR
Packaging: Box
Type: RFID Reader
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Contents: Board(s), Cable(s), Power Supply, Accessories
товару немає в наявності
В кошику
од. на суму грн.
| SPSPRDA2-P |
Виробник: onsemi
Description: UHF ANTENNA RF-SMA
Packaging: Box
Mounting Type: Chassis Mount
Frequency Range: 865MHz ~ 928MHz
Applications: General Purpose
Gain: 6dBi
Termination: RP-SMA
Number of Bands: 1
VSWR: 2
Antenna Type: Module
Frequency Group: UHF (300MHz ~ 1GHz)
Frequency (Center/Band): 896MHz
Description: UHF ANTENNA RF-SMA
Packaging: Box
Mounting Type: Chassis Mount
Frequency Range: 865MHz ~ 928MHz
Applications: General Purpose
Gain: 6dBi
Termination: RP-SMA
Number of Bands: 1
VSWR: 2
Antenna Type: Module
Frequency Group: UHF (300MHz ~ 1GHz)
Frequency (Center/Band): 896MHz
товару немає в наявності
В кошику
од. на суму грн.
| FDD4141-F085P |
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Виробник: onsemi
Description: MOSFET P-CH 40V 10.8A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12.7A, 10V
Power Dissipation (Max): 2.4W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 10.8A/50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12.7A, 10V
Power Dissipation (Max): 2.4W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FSL538HPG |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Description: IC OFFLINE SWITCH FLYBACK 7DIP
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.86 грн |
| 10+ | 113.96 грн |
| 25+ | 107.49 грн |
| 100+ | 85.95 грн |
| 250+ | 80.71 грн |
| 500+ | 70.62 грн |
| 1000+ | 57.56 грн |
| 2500+ | 53.59 грн |
| 5000+ | 51.60 грн |
| NCP105AMX180TBG |
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Виробник: onsemi
Description: IC REG LINEAR 1.8V 150MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.33V @ 150mA
Protection Features: Current Limit
Description: IC REG LINEAR 1.8V 150MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.33V @ 150mA
Protection Features: Current Limit
товару немає в наявності
В кошику
од. на суму грн.




























