Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SCH1435-TL-W | onsemi | Description: MOSFET N-CH 30V 3A 6SCH |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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SCH1433-TL-W | onsemi | Description: MOSFET N-CH 20V 3.5A SOT563/SCH6 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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SCH1439-TL-H | onsemi |
Description: MOSFET N-CH 30V 3.5A 6SCH Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V Power Dissipation (Max): 1W (Ta) Supplier Device Package: 6-SCH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V |
на замовлення 159639 шт: термін постачання 21-31 дні (днів) |
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SCH1435-TL-H | onsemi |
Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk |
на замовлення 34780 шт: термін постачання 21-31 дні (днів) |
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SCH1439-TL-W | onsemi |
Description: MOSFET N-CH 30V 3.5A SOT563/SCH6 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-563/SCH6 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V |
на замовлення 19895 шт: термін постачання 21-31 дні (днів) |
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SCH1402-TL-E | onsemi |
Description: NCH 1.8V DRIVE SERIES Packaging: Bulk |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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MMSF4N01HDR2 | onsemi |
Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V |
на замовлення 105281 шт: термін постачання 21-31 дні (днів) |
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MC74LVX245DW | onsemi |
Description: IC TXRX NON-INVERT 3.6V 20SOIC Packaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 4mA, 4mA Supplier Device Package: 20-SOIC Part Status: Active |
на замовлення 12996 шт: термін постачання 21-31 дні (днів) |
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MC74LVX245DT | onsemi | Description: BUS TRANSCEIVER |
товар відсутній |
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NTR1P02LT1 | onsemi | Description: MOSFET P-CH 20V 1.3A SOT23-3 |
товар відсутній |
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MC34063LINVEVB | onsemi |
Description: EVAL BOARD FOR MC34063LINV Packaging: Bulk Voltage - Output: -12V Voltage - Input: 5V Current - Output: 50mA Frequency - Switching: 100kHz Regulator Topology: Inverting Board Type: Fully Populated Utilized IC / Part: MC34063 Supplied Contents: Board(s) Main Purpose: DC/DC, Negative Inverter Outputs and Type: 1, Non-Isolated Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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MM5Z68VT1 | onsemi |
Description: DIODE ZENER 68V 200MW SOD523 Packaging: Bulk Tolerance: ±6% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 240 Ohms Supplier Device Package: SOD-523 Power - Max: 100 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V |
на замовлення 26000 шт: термін постачання 21-31 дні (днів) |
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MM3Z68VT1 | onsemi |
Description: DIODE ZENER VREG 300MW SOD323 Packaging: Bulk Tolerance: ±6% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 240 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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CAT25320VI-G-ON | onsemi |
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
товар відсутній |
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2SD1835T-AA | onsemi |
Description: TRANS NPN 50V 2A 3NP Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: 3-NP Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 750 mW |
на замовлення 221274 шт: термін постачання 21-31 дні (днів) |
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2SD1835T | onsemi |
Description: TRANS NPN 50V 2A 3NP Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: 3-NP Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 750 mW |
на замовлення 8463 шт: термін постачання 21-31 дні (днів) |
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CM1293A-04MR | onsemi |
Description: TVS DIODE 3.3VWM 9.9VC 10MSOP Packaging: Bulk Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: 10-MSOP Unidirectional Channels: 4 Voltage - Clamping (Max) @ Ipp: 9.9V (Typ) Power Line Protection: Yes Part Status: Obsolete |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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AR0147ATSC00XUEGH3-GEVB | onsemi |
Description: 1.3MP 1/4 CIS IBGA63 (8X7 Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0147AT Supplied Contents: Board(s) Part Status: Obsolete |
товар відсутній |
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MC14555BCPG | onsemi |
Description: IC DECODER/DEMUX 1X2:4 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 1 x 2:4 Type: Decoder/Demultiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 2 Current - Output High, Low: 8.8mA, 8.8mA Voltage Supply Source: Dual Supply Supplier Device Package: 16-PDIP Part Status: Obsolete |
на замовлення 6066 шт: термін постачання 21-31 дні (днів) |
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NTMFS5H600NLT1G | onsemi |
Description: MOSFET N-CH 60V 35A/250A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 3.3W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V |
товар відсутній |
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NTTFS4930NTAG | onsemi |
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 10V Power Dissipation (Max): 790mW (Ta), 20.2W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V |
товар відсутній |
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NTTFS4930NTAG | onsemi |
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 10V Power Dissipation (Max): 790mW (Ta), 20.2W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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EMI8141MUTAG | onsemi |
Description: CMC 100MA 2LN SMD ESD Packaging: Tape & Reel (TR) Features: TVS Diode ESD Protection Package / Case: 6-XFDFN Filter Type: Signal Line Size / Dimension: 0.055" L x 0.053" W (1.40mm x 1.35mm) Mounting Type: Surface Mount Number of Lines: 2 Operating Temperature: -40°C ~ 85°C Height (Max): 0.020" (0.50mm) Current Rating (Max): 100mA DC Resistance (DCR) (Max): 6Ohm (Typ) |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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NGTB30N60L2WG | onsemi |
Description: IGBT 600V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 100ns/390ns Switching Energy: 310µJ (on), 1.14mJ (off) Test Condition: 300V, 30A, 30Ohm, 15V Gate Charge: 166 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 225 W |
на замовлення 46 шт: термін постачання 21-31 дні (днів) |
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2SJ634-S-TL-E | onsemi | Description: PCH 4V DRIVE SERIES |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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2SJ634-E | onsemi | Description: 8A, 60V, P-CHANNEL MOSFET |
на замовлення 13478 шт: термін постачання 21-31 дні (днів) |
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2SA1016KG-AA | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANS PNP Packaging: Bulk Part Status: Active |
на замовлення 18070 шт: термін постачання 21-31 дні (днів) |
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FFPF20UP30DNTU | onsemi |
Description: DIODE ARRAY GP 300V 10A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Avalanche Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220F-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 300 V |
товар відсутній |
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1N4738ARL | onsemi |
Description: DIODE ZENER 8.2V 1W 5% Packaging: Bulk Part Status: Active |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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1N4738ATA | onsemi |
Description: DIODE ZENER 8.2V 1W DO41 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 6 V |
на замовлення 38900 шт: термін постачання 21-31 дні (днів) |
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SN74LS02M | onsemi |
Description: IC GATE NOR 2-INP Packaging: Bulk Part Status: Active |
на замовлення 9296 шт: термін постачання 21-31 дні (днів) |
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MC74AC153D | onsemi |
Description: MUX, AC SERIES Packaging: Bulk Part Status: Active |
товар відсутній |
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MC74HC367AFL1 | onsemi |
Description: IC BUFFER NON-INVERT 6V Packaging: Bulk Output Type: 3-State Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 2, 4 (Hex) Current - Output High, Low: 7.8mA, 7.8mA Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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MC74HC367AFR1 | onsemi |
Description: IC BUFFER NON-INVERT 6V Packaging: Bulk Output Type: 3-State Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 2, 4 (Hex) Current - Output High, Low: 7.8mA, 7.8mA Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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1SMB10AT3 | onsemi |
Description: TVS DIODE 10VWM 17VC SMB Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1460pF @ 1MHz Current - Peak Pulse (10/1000µs): 35.3A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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1SMB10AT3G | onsemi |
Description: TVS DIODE 10VWM 17VC 425-TEPBGA Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: Telecom Capacitance @ Frequency: 1460pF @ 1MHz Current - Peak Pulse (10/1000µs): 35.3A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 23669 шт: термін постачання 21-31 дні (днів) |
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1SMB100AT3G | onsemi | Description: TVS DIODE 100VWM 162VC SMB |
на замовлення 1069 шт: термін постачання 21-31 дні (днів) |
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CPH5871-TL-W | onsemi |
Description: MOSFET N-CH 30V 3.5A 5CPH Packaging: Bulk Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 900mW (Ta) Supplier Device Package: 5-CPH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FSA831L10X-F131-ON | onsemi |
Description: USB2.0 HIGH-SPEED (480MBPS) CHAR Packaging: Bulk Part Status: Active |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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FSA831AL10X-F131 | onsemi |
Description: IC CHARGER DETECT SWITCH 10UPAK Packaging: Tape & Reel (TR) Package / Case: 10-UFQFN Exposed Pad Mounting Type: Surface Mount Function: Multi-Function Controller Interface: USB Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 10-MicroPak™ Fault Protection: Over Voltage |
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FDS9435ANBAD008 | onsemi |
Description: MOSFET P-CH 30V 5.3A 8-SOIC Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 5.3A (Tj) Part Status: Obsolete |
товар відсутній |
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SMMBD701LT1 | onsemi |
Description: MIXER DIODE, UH FREQUENCY Packaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - Single Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 1pF @ 20V, 1MHz Voltage - Peak Reverse (Max): 70V Supplier Device Package: SOT-23-3 (TO-236) Power Dissipation (Max): 200 mW |
на замовлення 167875 шт: термін постачання 21-31 дні (днів) |
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1SMB40CAT3G | onsemi |
Description: TVS DIODE 40VWM 64.5VC SMB Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 220pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.3A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 251394 шт: термін постачання 21-31 дні (днів) |
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2N4402RLRA | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
на замовлення 12333 шт: термін постачання 21-31 дні (днів) |
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NVMFS024N06CT1G | onsemi |
Description: MOSFET N-CH 60V 8A/25A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Power Dissipation (Max): 3.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
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NVMFS024N06CT1G | onsemi |
Description: MOSFET N-CH 60V 8A/25A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Power Dissipation (Max): 3.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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NC7SZ14P5X-F080-ON | onsemi | Description: INVERTER, LVC/LCX/Z SERIES, 1 FU |
товар відсутній |
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NSBA115EDXV6T1 | onsemi | Description: TRANS BRT DUAL PNP 50V SOT-563 |
на замовлення 15975 шт: термін постачання 21-31 дні (днів) |
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NCP114AMX160TCG | onsemi |
Description: IC REG LINEAR 1.6V 300MA 4UDFN Packaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-UDFN (1.0x1.0) Voltage - Output (Min/Fixed): 1.6V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NCP114AMX160TCG | onsemi |
Description: IC REG LINEAR 1.6V 300MA 4UDFN Packaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-UDFN (1.0x1.0) Voltage - Output (Min/Fixed): 1.6V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 4732 шт: термін постачання 21-31 дні (днів) |
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MMSD914T1 | onsemi |
Description: DIODE SWITCH 100V SOD123 Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 39061 шт: термін постачання 21-31 дні (днів) |
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MMSD914 | onsemi |
Description: DIODE GEN PURP 100V 200MA SOD123 Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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MMSD914T3G | onsemi |
Description: DIODE GEN PURP 100V 200MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 70000 шт: термін постачання 21-31 дні (днів) |
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MMSD914T3G | onsemi |
Description: DIODE GEN PURP 100V 200MA SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 75732 шт: термін постачання 21-31 дні (днів) |
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BCW61BLT3 | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active |
на замовлення 39500 шт: термін постачання 21-31 дні (днів) |
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BCW61BMTF-ON | onsemi |
Description: TRANS PNP 32V 0.1A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 350 mW |
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BCW61DLT1 | onsemi |
Description: TRANS GP BJT PNP 32V 0.1A Packaging: Bulk Part Status: Active |
товар відсутній |
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SBRD835LT4 | onsemi |
Description: SCHOTTKY BARRIER RECTIFIER Packaging: Bulk Part Status: Active |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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1SMC14AT3G | onsemi | Description: TVS DIODE 14VWM 23.2VC SMC |
на замовлення 1750 шт: термін постачання 21-31 дні (днів) |
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NCV551SN30T1G | onsemi | Description: IC REG LINEAR 3V 150MA 5TSOP |
товар відсутній |
SCH1435-TL-W |
Виробник: onsemi
Description: MOSFET N-CH 30V 3A 6SCH
Description: MOSFET N-CH 30V 3A 6SCH
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2623+ | 7.23 грн |
SCH1433-TL-W |
Виробник: onsemi
Description: MOSFET N-CH 20V 3.5A SOT563/SCH6
Description: MOSFET N-CH 20V 3.5A SOT563/SCH6
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2623+ | 7.54 грн |
SCH1439-TL-H |
Виробник: onsemi
Description: MOSFET N-CH 30V 3.5A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Description: MOSFET N-CH 30V 3.5A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
на замовлення 159639 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2219+ | 9.19 грн |
SCH1435-TL-H |
на замовлення 34780 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2219+ | 9.07 грн |
SCH1439-TL-W |
Виробник: onsemi
Description: MOSFET N-CH 30V 3.5A SOT563/SCH6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Description: MOSFET N-CH 30V 3.5A SOT563/SCH6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
на замовлення 19895 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2219+ | 9.19 грн |
SCH1402-TL-E |
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3206+ | 5.85 грн |
MMSF4N01HDR2 |
Виробник: onsemi
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V
на замовлення 105281 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2049+ | 9.76 грн |
MC74LVX245DW |
Виробник: onsemi
Description: IC TXRX NON-INVERT 3.6V 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC TXRX NON-INVERT 3.6V 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 12996 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3806+ | 5.25 грн |
MC34063LINVEVB |
Виробник: onsemi
Description: EVAL BOARD FOR MC34063LINV
Packaging: Bulk
Voltage - Output: -12V
Voltage - Input: 5V
Current - Output: 50mA
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: MC34063
Supplied Contents: Board(s)
Main Purpose: DC/DC, Negative Inverter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: EVAL BOARD FOR MC34063LINV
Packaging: Bulk
Voltage - Output: -12V
Voltage - Input: 5V
Current - Output: 50mA
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: MC34063
Supplied Contents: Board(s)
Main Purpose: DC/DC, Negative Inverter
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4102.63 грн |
MM5Z68VT1 |
Виробник: onsemi
Description: DIODE ZENER 68V 200MW SOD523
Packaging: Bulk
Tolerance: ±6%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-523
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Description: DIODE ZENER 68V 200MW SOD523
Packaging: Bulk
Tolerance: ±6%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-523
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
на замовлення 26000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 1.97 грн |
MM3Z68VT1 |
Виробник: onsemi
Description: DIODE ZENER VREG 300MW SOD323
Packaging: Bulk
Tolerance: ±6%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Description: DIODE ZENER VREG 300MW SOD323
Packaging: Bulk
Tolerance: ±6%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 1.97 грн |
CAT25320VI-G-ON |
Виробник: onsemi
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
товар відсутній
2SD1835T-AA |
Виробник: onsemi
Description: TRANS NPN 50V 2A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
Description: TRANS NPN 50V 2A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
на замовлення 221274 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2420+ | 7.88 грн |
2SD1835T |
Виробник: onsemi
Description: TRANS NPN 50V 2A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
Description: TRANS NPN 50V 2A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
на замовлення 8463 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2420+ | 7.88 грн |
CM1293A-04MR |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 9.9VC 10MSOP
Packaging: Bulk
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 10-MSOP
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 9.9V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Description: TVS DIODE 3.3VWM 9.9VC 10MSOP
Packaging: Bulk
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 10-MSOP
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 9.9V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1031+ | 19.28 грн |
AR0147ATSC00XUEGH3-GEVB |
Виробник: onsemi
Description: 1.3MP 1/4 CIS IBGA63 (8X7
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0147AT
Supplied Contents: Board(s)
Part Status: Obsolete
Description: 1.3MP 1/4 CIS IBGA63 (8X7
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0147AT
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
MC14555BCPG |
Виробник: onsemi
Description: IC DECODER/DEMUX 1X2:4 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-PDIP
Part Status: Obsolete
Description: IC DECODER/DEMUX 1X2:4 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-PDIP
Part Status: Obsolete
на замовлення 6066 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
833+ | 23.63 грн |
NTMFS5H600NLT1G |
Виробник: onsemi
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
товар відсутній
NTTFS4930NTAG |
Виробник: onsemi
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 10V
Power Dissipation (Max): 790mW (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 10V
Power Dissipation (Max): 790mW (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V
товар відсутній
NTTFS4930NTAG |
Виробник: onsemi
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 10V
Power Dissipation (Max): 790mW (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 10V
Power Dissipation (Max): 790mW (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.39 грн |
10+ | 32.11 грн |
EMI8141MUTAG |
Виробник: onsemi
Description: CMC 100MA 2LN SMD ESD
Packaging: Tape & Reel (TR)
Features: TVS Diode ESD Protection
Package / Case: 6-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.055" L x 0.053" W (1.40mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
Description: CMC 100MA 2LN SMD ESD
Packaging: Tape & Reel (TR)
Features: TVS Diode ESD Protection
Package / Case: 6-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.055" L x 0.053" W (1.40mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 24.22 грн |
6000+ | 22.45 грн |
15000+ | 21.75 грн |
NGTB30N60L2WG |
Виробник: onsemi
Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 100ns/390ns
Switching Energy: 310µJ (on), 1.14mJ (off)
Test Condition: 300V, 30A, 30Ohm, 15V
Gate Charge: 166 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 225 W
Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 100ns/390ns
Switching Energy: 310µJ (on), 1.14mJ (off)
Test Condition: 300V, 30A, 30Ohm, 15V
Gate Charge: 166 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 225 W
на замовлення 46 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 304.27 грн |
10+ | 245.76 грн |
2SJ634-S-TL-E |
Виробник: onsemi
Description: PCH 4V DRIVE SERIES
Description: PCH 4V DRIVE SERIES
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
425+ | 50.95 грн |
2SJ634-E |
Виробник: onsemi
Description: 8A, 60V, P-CHANNEL MOSFET
Description: 8A, 60V, P-CHANNEL MOSFET
на замовлення 13478 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
258+ | 83.24 грн |
2SA1016KG-AA |
на замовлення 18070 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2219+ | 9.19 грн |
FFPF20UP30DNTU |
Виробник: onsemi
Description: DIODE ARRAY GP 300V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Description: DIODE ARRAY GP 300V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
товар відсутній
1N4738ARL |
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 1.97 грн |
1N4738ATA |
Виробник: onsemi
Description: DIODE ZENER 8.2V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Description: DIODE ZENER 8.2V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
на замовлення 38900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 1.97 грн |
SN74LS02M |
на замовлення 9296 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2664+ | 7.22 грн |
MC74AC153D |
товар відсутній
MC74HC367AFL1 |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V
Packaging: Bulk
Output Type: 3-State
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 2, 4 (Hex)
Current - Output High, Low: 7.8mA, 7.8mA
Part Status: Active
Description: IC BUFFER NON-INVERT 6V
Packaging: Bulk
Output Type: 3-State
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 2, 4 (Hex)
Current - Output High, Low: 7.8mA, 7.8mA
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1480+ | 13 грн |
MC74HC367AFR1 |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 6V
Packaging: Bulk
Output Type: 3-State
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 2, 4 (Hex)
Current - Output High, Low: 7.8mA, 7.8mA
Part Status: Active
Description: IC BUFFER NON-INVERT 6V
Packaging: Bulk
Output Type: 3-State
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 2, 4 (Hex)
Current - Output High, Low: 7.8mA, 7.8mA
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1480+ | 13 грн |
1SMB10AT3 |
Виробник: onsemi
Description: TVS DIODE 10VWM 17VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1460pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 10VWM 17VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1460pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2219+ | 9.19 грн |
1SMB10AT3G |
Виробник: onsemi
Description: TVS DIODE 10VWM 17VC 425-TEPBGA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Capacitance @ Frequency: 1460pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 10VWM 17VC 425-TEPBGA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Capacitance @ Frequency: 1460pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 23669 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1665+ | 11.82 грн |
1SMB100AT3G |
Виробник: onsemi
Description: TVS DIODE 100VWM 162VC SMB
Description: TVS DIODE 100VWM 162VC SMB
на замовлення 1069 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1069+ | 19.43 грн |
CPH5871-TL-W |
Виробник: onsemi
Description: MOSFET N-CH 30V 3.5A 5CPH
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Supplier Device Package: 5-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Description: MOSFET N-CH 30V 3.5A 5CPH
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Supplier Device Package: 5-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1721+ | 11.02 грн |
FSA831L10X-F131-ON |
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1069+ | 19.91 грн |
FSA831AL10X-F131 |
Виробник: onsemi
Description: IC CHARGER DETECT SWITCH 10UPAK
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Multi-Function Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-MicroPak™
Fault Protection: Over Voltage
Description: IC CHARGER DETECT SWITCH 10UPAK
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Multi-Function Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-MicroPak™
Fault Protection: Over Voltage
товар відсутній
FDS9435ANBAD008 |
Виробник: onsemi
Description: MOSFET P-CH 30V 5.3A 8-SOIC
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tj)
Part Status: Obsolete
Description: MOSFET P-CH 30V 5.3A 8-SOIC
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tj)
Part Status: Obsolete
товар відсутній
SMMBD701LT1 |
Виробник: onsemi
Description: MIXER DIODE, UH FREQUENCY
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Voltage - Peak Reverse (Max): 70V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
Description: MIXER DIODE, UH FREQUENCY
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Voltage - Peak Reverse (Max): 70V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
на замовлення 167875 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2959+ | 6.56 грн |
1SMB40CAT3G |
Виробник: onsemi
Description: TVS DIODE 40VWM 64.5VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 220pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 40VWM 64.5VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 220pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 251394 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1268+ | 15.56 грн |
2N4402RLRA |
Виробник: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
на замовлення 12333 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12333+ | 1.95 грн |
NVMFS024N06CT1G |
Виробник: onsemi
Description: MOSFET N-CH 60V 8A/25A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Power Dissipation (Max): 3.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 8A/25A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Power Dissipation (Max): 3.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
NVMFS024N06CT1G |
Виробник: onsemi
Description: MOSFET N-CH 60V 8A/25A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Power Dissipation (Max): 3.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 8A/25A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Power Dissipation (Max): 3.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
NSBA115EDXV6T1 |
Виробник: onsemi
Description: TRANS BRT DUAL PNP 50V SOT-563
Description: TRANS BRT DUAL PNP 50V SOT-563
на замовлення 15975 шт:
термін постачання 21-31 дні (днів)NCP114AMX160TCG |
Виробник: onsemi
Description: IC REG LINEAR 1.6V 300MA 4UDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 1.6V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.6V 300MA 4UDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 1.6V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.79 грн |
NCP114AMX160TCG |
Виробник: onsemi
Description: IC REG LINEAR 1.6V 300MA 4UDFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 1.6V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.6V 300MA 4UDFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 1.6V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 4732 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 26.3 грн |
15+ | 18.89 грн |
25+ | 17.03 грн |
100+ | 8.72 грн |
250+ | 8.43 грн |
500+ | 7.56 грн |
1000+ | 5.72 грн |
MMSD914T1 |
Виробник: onsemi
Description: DIODE SWITCH 100V SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE SWITCH 100V SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 39061 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6662+ | 3.28 грн |
MMSD914 |
Виробник: onsemi
Description: DIODE GEN PURP 100V 200MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 200MA SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6662+ | 3.28 грн |
MMSD914T3G |
Виробник: onsemi
Description: DIODE GEN PURP 100V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.29 грн |
30000+ | 1.15 грн |
50000+ | 0.99 грн |
MMSD914T3G |
Виробник: onsemi
Description: DIODE GEN PURP 100V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 75732 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
31+ | 9.24 грн |
44+ | 6.3 грн |
100+ | 3.41 грн |
500+ | 2.51 грн |
1000+ | 1.74 грн |
2000+ | 1.44 грн |
5000+ | 1.34 грн |
BCW61BLT3 |
на замовлення 39500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 1.95 грн |
BCW61BMTF-ON |
Виробник: onsemi
Description: TRANS PNP 32V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 350 mW
Description: TRANS PNP 32V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 350 mW
товар відсутній
BCW61DLT1 |
товар відсутній
SBRD835LT4 |
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1401+ | 14.93 грн |
1SMC14AT3G |
Виробник: onsemi
Description: TVS DIODE 14VWM 23.2VC SMC
Description: TVS DIODE 14VWM 23.2VC SMC
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)