Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MC74ACT623N | onsemi |
Description: BUS TRANSCEIVER, ACT SERIES, 1 F Packaging: Bulk |
на замовлення 1780 шт: термін постачання 21-31 дні (днів) |
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MC74ACT623M | onsemi |
Description: OCT BIDIRECTIONAL TRANS Packaging: Bulk |
на замовлення 856 шт: термін постачання 21-31 дні (днів) |
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1.5KE43AG | onsemi |
Description: TVS DIODE 36.8VWM 59.3VC DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 25.3A Voltage - Reverse Standoff (Typ): 36.8V (Max) Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 40.9V Voltage - Clamping (Max) @ Ipp: 59.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
на замовлення 28472 шт: термін постачання 21-31 дні (днів) |
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STP3N50E | onsemi |
Description: NFET T0220 SPCL 500V Packaging: Bulk Part Status: Active |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
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2SC3402 | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN Packaging: Bulk Part Status: Active Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Supplier Device Package: 3-SPA |
на замовлення 13337 шт: термін постачання 21-31 дні (днів) |
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NVCR5C426N | onsemi | Description: MOSFET N-CH 40V RINGPAK |
товар відсутній |
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2SA1481E-AC | onsemi |
Description: BIP PNP 0.15A 50V Packaging: Bulk |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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2SA1450S-AA | onsemi |
Description: 0.5A, 80V, PNP Packaging: Bulk |
товар відсутній |
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2SA1415S-TD-E | onsemi |
Description: TRANSISTOR Packaging: Bulk Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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2SA1402E | onsemi |
Description: POWER BIPOLAR TRANSISTOR, PNP Packaging: Bulk |
товар відсутній |
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2SA1478E | onsemi |
Description: PNP SILICON TRANSISTOR Packaging: Bulk Part Status: Active Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 150MHz Supplier Device Package: TO-126ML Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 1.3 W |
на замовлення 15400 шт: термін постачання 21-31 дні (днів) |
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2SA1434-TB-E | onsemi |
Description: BIP PNP 0.1A 50V Packaging: Bulk |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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2SA1469R | onsemi |
Description: PNP SILICON TRANSISTOR Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-220ML Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
на замовлення 11914 шт: термін постачання 21-31 дні (днів) |
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2SA1469R-MBS-LA9 | onsemi |
Description: PNP EPITAXIAL PLANAR SILICON Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-220ML Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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2SA1470S | onsemi |
Description: POWER BIPOLAR TRANSISTOR, PNP Packaging: Bulk Part Status: Active |
товар відсутній |
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2SA1435 | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANS PNP Packaging: Bulk |
товар відсутній |
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2SA1471R | onsemi |
Description: POWER BIPOLAR TRANSISTOR, PNP Packaging: Bulk |
товар відсутній |
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2SA1405E | onsemi |
Description: PNP SILICON TRANSISTOR Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 7mA, 70mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Frequency - Transition: 500MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1.2 W |
на замовлення 14079 шт: термін постачання 21-31 дні (днів) |
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2SA1406D | onsemi |
Description: PNP SILICON TRANSISTOR Packaging: Bulk Part Status: Active |
товар відсутній |
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2SD2261-TD-E | onsemi |
Description: NPN 2.5A 60V DARLINGTON Packaging: Bulk |
на замовлення 9593 шт: термін постачання 21-31 дні (днів) |
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NCP114BMX075TCG | onsemi | Description: IC REG LINEAR 0.75V 300MA 4UDFN |
товар відсутній |
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MC74HCT174AN | onsemi |
Description: IC FF D-TYPE SNGL 6BIT 16DIP Packaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Non-Inverted Mounting Type: Through Hole Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 4mA, 4mA Trigger Type: Positive Edge Clock Frequency: 25 MHz Input Capacitance: 10 pF Supplier Device Package: 16-PDIP Max Propagation Delay @ V, Max CL: 40ns @ 4.5V, 50pF Part Status: Active Number of Bits per Element: 6 |
на замовлення 5300 шт: термін постачання 21-31 дні (днів) |
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MC74HCT174AD | onsemi |
Description: IC FF D-TYPE SNGL 6BIT 16SOIC Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 4mA, 4mA Trigger Type: Positive Edge Clock Frequency: 25 MHz Input Capacitance: 10 pF Supplier Device Package: 16-SOIC Max Propagation Delay @ V, Max CL: 40ns @ 4.5V, 50pF Number of Bits per Element: 6 |
товар відсутній |
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SMMUN2215LT1G-M01 | onsemi | Description: TRANS PREBIAS NPN 50V SOT-23-3 |
товар відсутній |
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SZT1002T1 | onsemi |
Description: SS SOT223 GP XSTR SPCL TR Packaging: Bulk Part Status: Active |
на замовлення 99000 шт: термін постачання 21-31 дні (днів) |
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SZT1004T1G | onsemi |
Description: SS SOT223 GP XSTR SPCL TR Packaging: Bulk Part Status: Active |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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SZT1009T1 | onsemi |
Description: SS SOT223 HV XSTR SPCL TR Packaging: Bulk Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SZT1010T1 | onsemi |
Description: TRANS SOT223 Packaging: Bulk Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TF262TH-4-TL-H | onsemi |
Description: JFET N-CH 1MA VTFP Packaging: Bulk Package / Case: 3-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 2V Current Drain (Id) - Max: 1 mA Supplier Device Package: VTFP Part Status: Obsolete Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 2 V |
на замовлення 1000000 шт: термін постачання 21-31 дні (днів) |
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TF252TH-4A-TL-H | onsemi |
Description: JFET N-CH 1MA VTFP Packaging: Bulk Package / Case: 3-SMD, Flat Lead Mounting Type: Surface Mount FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V Current Drain (Id) - Max: 1 mA Supplier Device Package: VTFP Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 100 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 2 V |
на замовлення 416000 шт: термін постачання 21-31 дні (днів) |
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MR2835SK | onsemi |
Description: TVS DIODE 23VWM TOP CAN Packaging: Bulk Package / Case: Top Can Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 23V Supplier Device Package: Top Can Unidirectional Channels: 1 Voltage - Breakdown (Min): 24V Power Line Protection: No Part Status: Obsolete |
на замовлення 8651 шт: термін постачання 21-31 дні (днів) |
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MUR415RL | onsemi | Description: DIODE GEN PURP 150V 4A DO201AD |
товар відсутній |
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MUR405 | onsemi | Description: DIODE GEN PURP 50V 4A DO201AD |
товар відсутній |
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MUR415 | onsemi | Description: DIODE GEN PURP 150V 4A DO201AD |
товар відсутній |
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MMBT2369LT1 | onsemi |
Description: TRANS SS GP NPN 15V SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 225 mW |
на замовлення 41736 шт: термін постачання 21-31 дні (днів) |
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MMBT2369ALT3 | onsemi |
Description: TRANS NPN 15V 0.2A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 225 mW |
товар відсутній |
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2N5639RLRA | onsemi |
Description: RF MOSFET Packaging: Bulk Part Status: Active |
на замовлення 22000 шт: термін постачання 21-31 дні (днів) |
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2N5655 | onsemi |
Description: TRANS NPN 250V 0.5A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV Frequency - Transition: 10MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 20 W |
на замовлення 17205 шт: термін постачання 21-31 дні (днів) |
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2N5639RLRAG | onsemi |
Description: JFET N-CH 35V TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS) Voltage - Breakdown (V(BR)GSS): 35 V Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Power - Max: 310 mW Resistance - RDS(On): 60 Ohms Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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2N5639G | onsemi |
Description: JFET N-CH 35V TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS) Voltage - Breakdown (V(BR)GSS): 35 V Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Power - Max: 310 mW Resistance - RDS(On): 60 Ohms Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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2N5655G | onsemi |
Description: TRANS NPN 250V 0.5A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV Frequency - Transition: 10MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 20 W |
на замовлення 2155 шт: термін постачання 21-31 дні (днів) |
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MC44605P | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -25°C ~ 150°C (TJ) Frequency - Switching: Up to 250kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V Supplier Device Package: 16-PDIP Fault Protection: Current Limiting, Over Voltage, Short Circuit Voltage - Start Up: 14.5 V Control Features: Frequency Control, Soft Start, Sync Part Status: Obsolete |
на замовлення 3148 шт: термін постачання 21-31 дні (днів) |
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MC44605PG | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -25°C ~ 150°C (TJ) Frequency - Switching: Up to 250kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V Supplier Device Package: 16-PDIP Fault Protection: Current Limiting, Over Voltage, Short Circuit Voltage - Start Up: 14.5 V Control Features: Frequency Control, Soft Start, Sync Part Status: Obsolete |
на замовлення 725 шт: термін постачання 21-31 дні (днів) |
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NLU2G17AMX1TCG | onsemi | Description: IC BUF NON-INVERT 5.5V 6ULLGA |
товар відсутній |
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NLU2G17AMX1TCG | onsemi | Description: IC BUF NON-INVERT 5.5V 6ULLGA |
на замовлення 2257 шт: термін постачання 21-31 дні (днів) |
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MC78FC40HT1 | onsemi |
Description: IC REG LINEAR FIXED LDO REG Packaging: Bulk Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 65mA Operating Temperature: -30°C ~ 80°C Output Configuration: Positive Current - Quiescent (Iq): 3.6 µA Voltage - Input (Max): 10V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 4V Part Status: Active Voltage Dropout (Max): 0.7V @ 40mA Protection Features: Over Current |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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SMUN5114T1G | onsemi | Description: TRANS PREBIAS PNP 202MW SC70-3 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SMUN5114T1G | onsemi | Description: TRANS PREBIAS PNP 202MW SC70-3 |
на замовлення 8850 шт: термін постачання 21-31 дні (днів) |
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DTC114TM3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 10 kOhms |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DTC114TM3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 10 kOhms |
на замовлення 15257 шт: термін постачання 21-31 дні (днів) |
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MMUN2237LT1G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
товар відсутній |
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MMUN2237LT1G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
товар відсутній |
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MUN5211T1 | onsemi |
Description: TRANS BRT NPN 50V SS MONO SOT323 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 310 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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SMUN5211T3 | onsemi | Description: TRANS PREBIAS NPN 202MW SC70-3 |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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SMUN5211T1 | onsemi | Description: TRANS PREBIAS NPN 202MW SC70-3 |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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TR00278 | onsemi |
Description: REC MICRO BUTTON SPECIAL Packaging: Bulk Part Status: Active |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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2SK1740-5-TB-E-ON | onsemi |
Description: N-CHANNEL JUNCTION SILICON FET Packaging: Bulk Part Status: Active |
на замовлення 66843 шт: термін постачання 21-31 дні (днів) |
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NDD60N550U1-35G | onsemi |
Description: MOSFET N-CH 600V 8.2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
на замовлення 20625 шт: термін постачання 21-31 дні (днів) |
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NDD60N550U1-1G | onsemi |
Description: MOSFET N-CH 600V 8.2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
на замовлення 20475 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C75LT3 | onsemi |
Description: DIODE ZENER SINGLE 75V 6% 300MW Packaging: Bulk Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 255 Ohms Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V |
товар відсутній |
MC74ACT623N |
на замовлення 1780 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
460+ | 43.24 грн |
MC74ACT623M |
на замовлення 856 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
256+ | 78.49 грн |
1.5KE43AG |
Виробник: onsemi
Description: TVS DIODE 36.8VWM 59.3VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.3A
Voltage - Reverse Standoff (Typ): 36.8V (Max)
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 36.8VWM 59.3VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.3A
Voltage - Reverse Standoff (Typ): 36.8V (Max)
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 28472 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1402+ | 13.97 грн |
STP3N50E |
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
417+ | 47.89 грн |
2SC3402 |
Виробник: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Supplier Device Package: 3-SPA
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Supplier Device Package: 3-SPA
на замовлення 13337 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2219+ | 9.31 грн |
2SA1481E-AC |
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5323+ | 3.99 грн |
2SA1415S-TD-E |
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1480+ | 14.41 грн |
2SA1478E |
Виробник: onsemi
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.3 W
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.3 W
на замовлення 15400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1158+ | 17.3 грн |
2SA1434-TB-E |
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1110+ | 17.96 грн |
2SA1469R |
Виробник: onsemi
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
на замовлення 11914 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
919+ | 21.95 грн |
2SA1469R-MBS-LA9 |
Виробник: onsemi
Description: PNP EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: PNP EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
919+ | 21.95 грн |
2SA1470S |
товар відсутній
2SA1405E |
Виробник: onsemi
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 7mA, 70mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 500MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.2 W
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 7mA, 70mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 500MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.2 W
на замовлення 14079 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
355+ | 56.54 грн |
2SA1406D |
товар відсутній
2SD2261-TD-E |
на замовлення 9593 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1268+ | 15.8 грн |
MC74HCT174AN |
Виробник: onsemi
Description: IC FF D-TYPE SNGL 6BIT 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 4mA, 4mA
Trigger Type: Positive Edge
Clock Frequency: 25 MHz
Input Capacitance: 10 pF
Supplier Device Package: 16-PDIP
Max Propagation Delay @ V, Max CL: 40ns @ 4.5V, 50pF
Part Status: Active
Number of Bits per Element: 6
Description: IC FF D-TYPE SNGL 6BIT 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 4mA, 4mA
Trigger Type: Positive Edge
Clock Frequency: 25 MHz
Input Capacitance: 10 pF
Supplier Device Package: 16-PDIP
Max Propagation Delay @ V, Max CL: 40ns @ 4.5V, 50pF
Part Status: Active
Number of Bits per Element: 6
на замовлення 5300 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2664+ | 7.22 грн |
MC74HCT174AD |
Виробник: onsemi
Description: IC FF D-TYPE SNGL 6BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 4mA, 4mA
Trigger Type: Positive Edge
Clock Frequency: 25 MHz
Input Capacitance: 10 pF
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 40ns @ 4.5V, 50pF
Number of Bits per Element: 6
Description: IC FF D-TYPE SNGL 6BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 4mA, 4mA
Trigger Type: Positive Edge
Clock Frequency: 25 MHz
Input Capacitance: 10 pF
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 40ns @ 4.5V, 50pF
Number of Bits per Element: 6
товар відсутній
SZT1002T1 |
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5770+ | 3.37 грн |
SZT1004T1G |
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3206+ | 6.06 грн |
SZT1009T1 |
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2219+ | 9.43 грн |
SZT1010T1 |
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1665+ | 11.97 грн |
TF262TH-4-TL-H |
Виробник: onsemi
Description: JFET N-CH 1MA VTFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 2V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: VTFP
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 2 V
Description: JFET N-CH 1MA VTFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 2V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: VTFP
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 2 V
на замовлення 1000000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4808+ | 4.04 грн |
TF252TH-4A-TL-H |
Виробник: onsemi
Description: JFET N-CH 1MA VTFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: VTFP
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 100 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 2 V
Description: JFET N-CH 1MA VTFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: VTFP
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 100 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 2 V
на замовлення 416000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3806+ | 5.76 грн |
MR2835SK |
Виробник: onsemi
Description: TVS DIODE 23VWM TOP CAN
Packaging: Bulk
Package / Case: Top Can
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V
Supplier Device Package: Top Can
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 23VWM TOP CAN
Packaging: Bulk
Package / Case: Top Can
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 23V
Supplier Device Package: Top Can
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power Line Protection: No
Part Status: Obsolete
на замовлення 8651 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
256+ | 77.69 грн |
MMBT2369LT1 |
Виробник: onsemi
Description: TRANS SS GP NPN 15V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 225 mW
Description: TRANS SS GP NPN 15V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 225 mW
на замовлення 41736 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5323+ | 3.99 грн |
MMBT2369ALT3 |
Виробник: onsemi
Description: TRANS NPN 15V 0.2A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 225 mW
Description: TRANS NPN 15V 0.2A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 225 mW
товар відсутній
2N5639RLRA |
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2219+ | 9.31 грн |
2N5655 |
Виробник: onsemi
Description: TRANS NPN 250V 0.5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 20 W
Description: TRANS NPN 250V 0.5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 20 W
на замовлення 17205 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2219+ | 9.31 грн |
2N5639RLRAG |
Виробник: onsemi
Description: JFET N-CH 35V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 310 mW
Resistance - RDS(On): 60 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Description: JFET N-CH 35V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 310 mW
Resistance - RDS(On): 60 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2219+ | 9.31 грн |
2N5639G |
Виробник: onsemi
Description: JFET N-CH 35V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 310 mW
Resistance - RDS(On): 60 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Description: JFET N-CH 35V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 12V (VGS)
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 310 mW
Resistance - RDS(On): 60 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2219+ | 9.31 грн |
2N5655G |
Виробник: onsemi
Description: TRANS NPN 250V 0.5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 20 W
Description: TRANS NPN 250V 0.5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 20 W
на замовлення 2155 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1480+ | 13.3 грн |
MC44605P |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 150°C (TJ)
Frequency - Switching: Up to 250kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V
Supplier Device Package: 16-PDIP
Fault Protection: Current Limiting, Over Voltage, Short Circuit
Voltage - Start Up: 14.5 V
Control Features: Frequency Control, Soft Start, Sync
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 150°C (TJ)
Frequency - Switching: Up to 250kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V
Supplier Device Package: 16-PDIP
Fault Protection: Current Limiting, Over Voltage, Short Circuit
Voltage - Start Up: 14.5 V
Control Features: Frequency Control, Soft Start, Sync
Part Status: Obsolete
на замовлення 3148 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
281+ | 71.17 грн |
MC44605PG |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 150°C (TJ)
Frequency - Switching: Up to 250kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V
Supplier Device Package: 16-PDIP
Fault Protection: Current Limiting, Over Voltage, Short Circuit
Voltage - Start Up: 14.5 V
Control Features: Frequency Control, Soft Start, Sync
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 150°C (TJ)
Frequency - Switching: Up to 250kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V
Supplier Device Package: 16-PDIP
Fault Protection: Current Limiting, Over Voltage, Short Circuit
Voltage - Start Up: 14.5 V
Control Features: Frequency Control, Soft Start, Sync
Part Status: Obsolete
на замовлення 725 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
156+ | 127.72 грн |
NLU2G17AMX1TCG |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 6ULLGA
Description: IC BUF NON-INVERT 5.5V 6ULLGA
на замовлення 2257 шт:
термін постачання 21-31 дні (днів)MC78FC40HT1 |
Виробник: onsemi
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 65mA
Operating Temperature: -30°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 3.6 µA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 4V
Part Status: Active
Voltage Dropout (Max): 0.7V @ 40mA
Protection Features: Over Current
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 65mA
Operating Temperature: -30°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 3.6 µA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 4V
Part Status: Active
Voltage Dropout (Max): 0.7V @ 40mA
Protection Features: Over Current
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
987+ | 19.96 грн |
SMUN5114T1G |
Виробник: onsemi
Description: TRANS PREBIAS PNP 202MW SC70-3
Description: TRANS PREBIAS PNP 202MW SC70-3
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)SMUN5114T1G |
Виробник: onsemi
Description: TRANS PREBIAS PNP 202MW SC70-3
Description: TRANS PREBIAS PNP 202MW SC70-3
на замовлення 8850 шт:
термін постачання 21-31 дні (днів)DTC114TM3T5G |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 10 kOhms
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 10 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 4.61 грн |
DTC114TM3T5G |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 10 kOhms
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 10 kOhms
на замовлення 15257 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 26.65 грн |
16+ | 18.04 грн |
100+ | 9.12 грн |
500+ | 6.98 грн |
1000+ | 5.18 грн |
2000+ | 4.36 грн |
MMUN2237LT1G |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
MMUN2237LT1G |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
MUN5211T1 |
Виробник: onsemi
Description: TRANS BRT NPN 50V SS MONO SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS BRT NPN 50V SS MONO SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6662+ | 3.41 грн |
SMUN5211T3 |
Виробник: onsemi
Description: TRANS PREBIAS NPN 202MW SC70-3
Description: TRANS PREBIAS NPN 202MW SC70-3
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)SMUN5211T1 |
Виробник: onsemi
Description: TRANS PREBIAS NPN 202MW SC70-3
Description: TRANS PREBIAS NPN 202MW SC70-3
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)TR00278 |
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1110+ | 19.45 грн |
2SK1740-5-TB-E-ON |
на замовлення 66843 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
258+ | 77.16 грн |
NDD60N550U1-35G |
Виробник: onsemi
Description: MOSFET N-CH 600V 8.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Description: MOSFET N-CH 600V 8.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
на замовлення 20625 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
380+ | 56.91 грн |
NDD60N550U1-1G |
Виробник: onsemi
Description: MOSFET N-CH 600V 8.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Description: MOSFET N-CH 600V 8.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
на замовлення 20475 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
351+ | 58.64 грн |
SZBZX84C75LT3 |
Виробник: onsemi
Description: DIODE ZENER SINGLE 75V 6% 300MW
Packaging: Bulk
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V
Description: DIODE ZENER SINGLE 75V 6% 300MW
Packaging: Bulk
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V
товар відсутній