| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CS44079DR8 | onsemi |
Description: ANA CUSTOM (DELPHI) LDO Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CS44094T5 | onsemi |
Description: ANA CUSTOM (DELPHI) LDO Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CS44167T5 | onsemi |
Description: ANA CUSTOM (DELPHI) Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SMBZ1091LT1 | onsemi |
Description: DIODE ZENER .225W SOT23 SPCL Packaging: Bulk |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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| SMBZ1093LT1 | onsemi |
Description: DIODE ZENER .225W SOT23 SPCL Packaging: Bulk |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NTD4858NA-1G | onsemi |
Description: MOSFET N-CH 25V 11.2A/73A IPAKInput Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Part Status: Obsolete Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
на замовлення 5660 шт: термін постачання 21-31 дні (днів) |
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NTD4858NAT4G | onsemi |
Description: MOSFET N-CH 25V 11.2A/73A DPAKVgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Part Status: Obsolete Supplier Device Package: DPAK |
на замовлення 56969 шт: термін постачання 21-31 дні (днів) |
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NTD4858NA-35G | onsemi |
Description: MOSFET N-CH 25V 11.2A/73A IPAKPackage / Case: TO-251-3 Stub Leads, IPak Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Part Status: Obsolete Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole |
на замовлення 12881 шт: термін постачання 21-31 дні (днів) |
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NTD4857NT4G | onsemi |
Description: MOSFET N-CH 25V 12A/78A DPAKInput Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
на замовлення 131000 шт: термін постачання 21-31 дні (днів) |
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NTD4857N-1G | onsemi |
Description: MOSFET N-CH 25V 12A/78A IPAKInput Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
на замовлення 8400 шт: термін постачання 21-31 дні (днів) |
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NTD4858N-1G | onsemi |
Description: MOSFET N-CH 25V 11.2A/73A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V |
на замовлення 4875 шт: термін постачання 21-31 дні (днів) |
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NTD4857NA-1G | onsemi |
Description: MOSFET N-CH 25V 12A/78A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V |
на замовлення 5700 шт: термін постачання 21-31 дні (днів) |
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NTD4857NAT4G | onsemi |
Description: MOSFET N-CH 25V 12A/78A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NTD4855N-1G | onsemi |
Description: MOSFET N-CH 25V 14A/98A IPAKInput Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
на замовлення 10425 шт: термін постачання 21-31 дні (днів) |
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NTD4855NT4G | onsemi |
Description: MOSFET N-CH 25V 14A/98A DPAKInput Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
на замовлення 209901 шт: термін постачання 21-31 дні (днів) |
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NTD4855NT4H | onsemi |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk |
на замовлення 27500 шт: термін постачання 21-31 дні (днів) |
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NTD4854NT4G | onsemi |
Description: MOSFET N-CH 25V 15.7A/128A DPAKInput Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
на замовлення 51325 шт: термін постачання 21-31 дні (днів) |
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NTD4854N-1G | onsemi |
Description: MOSFET N-CH 25V 15.7A/128A IPAKInput Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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SMBZ10-5LT1 | onsemi |
Description: SMBZ10-5LT1 Packaging: Bulk DigiKey Programmable: Not Verified Part Status: Active |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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NCP4414P | onsemi |
Description: BUFFER/INVERTER MOSFET DRIVERPackaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 27494 шт: термін постачання 21-31 дні (днів) |
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NCP4413DR2 | onsemi |
Description: BUFFER/INVERTER MOSFET DRIVERPackaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 53256 шт: термін постачання 21-31 дні (днів) |
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NCP4413P | onsemi |
Description: BUFFER/INVERTER MOSFET DRIVERPackaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 3512 шт: термін постачання 21-31 дні (днів) |
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LA2333T-TLM-E | onsemi |
Description: IC DATA COMM S524 24TSSOP Supplier Device Package: 24-TSSOP Mounting Type: Surface Mount Package / Case: 24-TFSOP (0.173", 4.40mm Width) Packaging: Bulk |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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1N4689TA | onsemi |
Description: DIODE ZENER 5.1V 0.5W 5%Current - Reverse Leakage @ Vr: 10 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Supplier Device Package: DO-35 (DO-204AH) Voltage - Zener (Nom) (Vz): 5.1 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk |
на замовлення 14365 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ5248BLT1G | onsemi |
Description: DIODE ZENER 18V 225MW SOT23-3Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 21 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 14 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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SZMMBZ5248BLT1G | onsemi |
Description: DIODE ZENER 18V 225MW SOT23-3Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 21 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 14 V Qualification: AEC-Q101 |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
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| L78M08T-TL-E | onsemi |
Description: IC REG LINEAR Packaging: Bulk Part Status: Active |
на замовлення 8400 шт: термін постачання 21-31 дні (днів) |
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| MTB4N50ET4 | onsemi |
Description: NFET D2PAK 500V 1.5R TR Packaging: Bulk |
на замовлення 5600 шт: термін постачання 21-31 дні (днів) |
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BUL146G | onsemi |
Description: TRANS NPN 400V 6A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V Frequency - Transition: 14MHz Supplier Device Package: TO-220 Part Status: Obsolete Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 100 W |
на замовлення 3173 шт: термін постачання 21-31 дні (днів) |
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LA0152CS-TLM-H | onsemi |
Description: CONSUMER CIRCUIT, PBGA4 |
на замовлення 271092 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 704 шт В кошику од. на суму грн. | ||||||||||
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NCP694H08HT1G | onsemi |
Description: IC REG LINEAR 0.8V 1A SOT89-5Packaging: Bulk Package / Case: SOT-89-5/6 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-89-5 Voltage - Output (Min/Fixed): 0.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.72V @ 1A (Typ) Protection Features: Over Current, Over Temperature |
на замовлення 4755 шт: термін постачання 21-31 дні (днів) |
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NCP694D08HT1G | onsemi |
Description: IC REG LINEAR 0.8V 1A SOT89-5Packaging: Bulk Package / Case: SOT-89-5/6 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-89-5 Voltage - Output (Min/Fixed): 0.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.72V @ 1A (Typ) Protection Features: Over Current, Over Temperature |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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NCP694HSAN08T1G | onsemi |
Description: IC REG LINEAR 0.8V 1A 6HSONPackaging: Bulk Package / Case: 6-VQFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-HSON (2.9x3) Voltage - Output (Min/Fixed): 0.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.72V @ 1A (Typ) Protection Features: Over Current, Over Temperature |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NCP694DSAN08T1G | onsemi |
Description: IC REG LINEAR 0.8V 1A 6HSONPackaging: Bulk Package / Case: 6-VQFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-HSON (2.9x3) Voltage - Output (Min/Fixed): 0.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.72V @ 1A (Typ) Protection Features: Over Current, Over Temperature |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MC74F244N | onsemi |
Description: BUS DRIVER, F/FAST SERIES, 2 FUNPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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HCPL2530W | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8-MDIPPackaging: Tube Package / Case: 8-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 7% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-MDIP Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 500ns Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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HCPL2530SV | onsemi |
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-SMDPackaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 7% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 500ns Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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HCPL2530V | onsemi |
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 7% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-DIP Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 500ns Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| AMIS30585C5852G | onsemi |
Description: IC MODEM S-FSK HALFDUPLEX 28PLCC Packaging: Tube Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Baud Rates: 14.4k Voltage - Supply: 3V ~ 3.6V Supplier Device Package: 28-PLCC (11.51x11.51) Part Status: Obsolete |
на замовлення 236 шт: термін постачання 21-31 дні (днів) |
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| LC7574FE-USV-E | onsemi |
Description: VFD DISPLAY DRIVER Packaging: Bulk |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H864NT1G | onsemi |
Description: MOSFET N-CH 80V 6.7A/21A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H864NT1G | onsemi |
Description: MOSFET N-CH 80V 6.7A/21A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 16459 шт: термін постачання 21-31 дні (днів) |
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2SD1827 | onsemi |
Description: TRANS NPN DARL 60V 10A TO-220MLPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 2V Frequency - Transition: 20MHz Supplier Device Package: TO-220ML Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
на замовлення 1204 шт: термін постачання 21-31 дні (днів) |
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NRVBD640CTG-VF01 | onsemi |
Description: DIODE ARRAY SCHOTTKY 40V 3A DPAK |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||
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2SA1391S | onsemi |
Description: TRANS PNP 50V 0.2A 3-NPPackaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1mA, 6V Frequency - Transition: 200MHz Supplier Device Package: 3-NP Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 400 mW |
на замовлення 27500 шт: термін постачання 21-31 дні (днів) |
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2SA1346-SSH-AC | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Supplier Device Package: 3-SPA Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Resistors Included: R1 and R2 |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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2SA1346-AC | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Package / Case: 3-SSIP Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Supplier Device Package: 3-SPA Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Resistors Included: R1 and R2 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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| 2SA1338-6-TB-E | onsemi |
Description: 0.5A, 50V, PNPPackaging: Bulk Part Status: Active |
на замовлення 199205 шт: термін постачання 21-31 дні (днів) |
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2SA1352E | onsemi |
Description: TRANS PNP 200V 0.1A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Frequency - Transition: 70MHz Supplier Device Package: TO-126 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 1.2 W |
на замовлення 11570 шт: термін постачання 21-31 дні (днів) |
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2SA1341-TB-E | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active |
на замовлення 162000 шт: термін постачання 21-31 дні (днів) |
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2SA1342-TB-E | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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| 2SA1338-5-TB-E | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active |
на замовлення 1273250 шт: термін постачання 21-31 дні (днів) |
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2SA1346 | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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2SA1339S | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||
| MC74HC237FEL | onsemi |
Description: IC DECODER/DEMUX 1 X 3:8 Packaging: Bulk Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Part Status: Active |
на замовлення 43000 шт: термін постачання 21-31 дні (днів) |
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| MC74HC237FR2 | onsemi |
Description: 1-OF-8 DCDR/DMLTPLXR LATH Packaging: Bulk Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| NSRM30CM3T5G | onsemi | Description: IC DIODE SCHOTTKY SOT-723 |
на замовлення 56000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1255 шт В кошику од. на суму грн. | |||||||||||
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P5P2308AF-216SR | onsemi |
Description: IC BUFFER ZERO DELAY 3.3V 16SOICDigiKey Programmable: Not Verified Number of Circuits: 1 Divider/Multiplier: Yes/Yes PLL: Yes with Bypass Supplier Device Package: 16-SOIC Differential - Input:Output: No/No Ratio - Input:Output: 1:8 Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C Input: Clock Frequency - Max: 133MHz Output: Clock Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NCN5130ASGEVB | onsemi |
Description: EVAL BOARD FOR NCN5130Part Status: Active Supplied Contents: Board(s) Utilized IC / Part: NCN5130 Type: Interface Function: KNX Contents: Board(s) Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NCN5110ASGEVB | onsemi |
Description: EVAL BOARD FOR NCN5110Packaging: Bulk Contents: Board(s) Part Status: Active Supplied Contents: Board(s) Utilized IC / Part: NCN5110 Type: Interface Function: KNX |
товару немає в наявності |
В кошику од. на суму грн. |
| SMBZ1091LT1 |
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7869+ | 2.67 грн |
| SMBZ1093LT1 |
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3620+ | 5.35 грн |
| NTD4858NA-1G |
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Виробник: onsemi
Description: MOSFET N-CH 25V 11.2A/73A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 25V 11.2A/73A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
на замовлення 5660 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1567+ | 14.16 грн |
| NTD4858NAT4G |
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Виробник: onsemi
Description: MOSFET N-CH 25V 11.2A/73A DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Part Status: Obsolete
Supplier Device Package: DPAK
Description: MOSFET N-CH 25V 11.2A/73A DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Part Status: Obsolete
Supplier Device Package: DPAK
на замовлення 56969 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1402+ | 15.65 грн |
| NTD4858NA-35G |
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Виробник: onsemi
Description: MOSFET N-CH 25V 11.2A/73A IPAK
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 25V 11.2A/73A IPAK
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
на замовлення 12881 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1402+ | 15.65 грн |
| NTD4857NT4G |
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Виробник: onsemi
Description: MOSFET N-CH 25V 12A/78A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET N-CH 25V 12A/78A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
на замовлення 131000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1268+ | 17.88 грн |
| NTD4857N-1G |
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Виробник: onsemi
Description: MOSFET N-CH 25V 12A/78A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 25V 12A/78A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
на замовлення 8400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1268+ | 17.88 грн |
| NTD4858N-1G |
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Виробник: onsemi
Description: MOSFET N-CH 25V 11.2A/73A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
Description: MOSFET N-CH 25V 11.2A/73A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
на замовлення 4875 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1211+ | 18.63 грн |
| NTD4857NA-1G |
Виробник: onsemi
Description: MOSFET N-CH 25V 12A/78A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
Description: MOSFET N-CH 25V 12A/78A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
на замовлення 5700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1025+ | 21.61 грн |
| NTD4857NAT4G |
Виробник: onsemi
Description: MOSFET N-CH 25V 12A/78A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET N-CH 25V 12A/78A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1025+ | 21.61 грн |
| NTD4855N-1G |
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Виробник: onsemi
Description: MOSFET N-CH 25V 14A/98A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 25V 14A/98A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
на замовлення 10425 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 987+ | 22.35 грн |
| NTD4855NT4G |
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Виробник: onsemi
Description: MOSFET N-CH 25V 14A/98A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET N-CH 25V 14A/98A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
на замовлення 209901 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 919+ | 24.59 грн |
| NTD4855NT4H |
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на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 919+ | 24.59 грн |
| NTD4854NT4G |
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Виробник: onsemi
Description: MOSFET N-CH 25V 15.7A/128A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET N-CH 25V 15.7A/128A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
на замовлення 51325 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 650+ | 34.27 грн |
| NTD4854N-1G |
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Виробник: onsemi
Description: MOSFET N-CH 25V 15.7A/128A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 25V 15.7A/128A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 650+ | 34.27 грн |
| SMBZ10-5LT1 |
Виробник: onsemi
Description: SMBZ10-5LT1
Packaging: Bulk
DigiKey Programmable: Not Verified
Part Status: Active
Description: SMBZ10-5LT1
Packaging: Bulk
DigiKey Programmable: Not Verified
Part Status: Active
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11539+ | 2.13 грн |
| NCP4414P |
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Виробник: onsemi
Description: BUFFER/INVERTER MOSFET DRIVER
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: BUFFER/INVERTER MOSFET DRIVER
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 27494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 546+ | 37.55 грн |
| NCP4413DR2 |
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Виробник: onsemi
Description: BUFFER/INVERTER MOSFET DRIVER
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: BUFFER/INVERTER MOSFET DRIVER
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 53256 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 497+ | 40.97 грн |
| NCP4413P |
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Виробник: onsemi
Description: BUFFER/INVERTER MOSFET DRIVER
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: BUFFER/INVERTER MOSFET DRIVER
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 3512 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 497+ | 40.97 грн |
| LA2333T-TLM-E |
Виробник: onsemi
Description: IC DATA COMM S524 24TSSOP
Supplier Device Package: 24-TSSOP
Mounting Type: Surface Mount
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Packaging: Bulk
Description: IC DATA COMM S524 24TSSOP
Supplier Device Package: 24-TSSOP
Mounting Type: Surface Mount
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Packaging: Bulk
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 172+ | 121.18 грн |
| 1N4689TA |
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Виробник: onsemi
Description: DIODE ZENER 5.1V 0.5W 5%
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35 (DO-204AH)
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 5.1V 0.5W 5%
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35 (DO-204AH)
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
на замовлення 14365 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11539+ | 2.13 грн |
| SZMMBZ5248BLT1G |
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Виробник: onsemi
Description: DIODE ZENER 18V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
Description: DIODE ZENER 18V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SZMMBZ5248BLT1G |
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Виробник: onsemi
Description: DIODE ZENER 18V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
Description: DIODE ZENER 18V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.20 грн |
| 39+ | 7.85 грн |
| 100+ | 4.85 грн |
| 500+ | 3.31 грн |
| 1000+ | 2.91 грн |
| L78M08T-TL-E |
на замовлення 8400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 170+ | 119.81 грн |
| MTB4N50ET4 |
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 116.40 грн |
| BUL146G |
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Виробник: onsemi
Description: TRANS NPN 400V 6A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 100 W
Description: TRANS NPN 400V 6A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 100 W
на замовлення 3173 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 377+ | 52.95 грн |
| LA0152CS-TLM-H |
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Виробник: onsemi
Description: CONSUMER CIRCUIT, PBGA4
Description: CONSUMER CIRCUIT, PBGA4
на замовлення 271092 шт:
термін постачання 21-31 дні (днів)
| NCP694H08HT1G |
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Виробник: onsemi
Description: IC REG LINEAR 0.8V 1A SOT89-5
Packaging: Bulk
Package / Case: SOT-89-5/6
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-89-5
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.72V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.8V 1A SOT89-5
Packaging: Bulk
Package / Case: SOT-89-5/6
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-89-5
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.72V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
на замовлення 4755 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 417+ | 51.44 грн |
| NCP694D08HT1G |
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Виробник: onsemi
Description: IC REG LINEAR 0.8V 1A SOT89-5
Packaging: Bulk
Package / Case: SOT-89-5/6
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-89-5
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.72V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.8V 1A SOT89-5
Packaging: Bulk
Package / Case: SOT-89-5/6
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-89-5
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.72V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 417+ | 51.44 грн |
| NCP694HSAN08T1G |
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Виробник: onsemi
Description: IC REG LINEAR 0.8V 1A 6HSON
Packaging: Bulk
Package / Case: 6-VQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-HSON (2.9x3)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.72V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.8V 1A 6HSON
Packaging: Bulk
Package / Case: 6-VQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-HSON (2.9x3)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.72V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 376+ | 57.16 грн |
| NCP694DSAN08T1G |
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Виробник: onsemi
Description: IC REG LINEAR 0.8V 1A 6HSON
Packaging: Bulk
Package / Case: 6-VQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-HSON (2.9x3)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.72V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.8V 1A 6HSON
Packaging: Bulk
Package / Case: 6-VQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-HSON (2.9x3)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.72V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 376+ | 57.16 грн |
| HCPL2530W |
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Виробник: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8-MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-MDIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 500ns
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 2.5KV 2CH TRANS 8-MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-MDIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 500ns
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| HCPL2530SV |
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Виробник: onsemi
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 500ns
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 500ns
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| HCPL2530V |
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Виробник: onsemi
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 500ns
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 500ns
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику
од. на суму грн.
| AMIS30585C5852G |
Виробник: onsemi
Description: IC MODEM S-FSK HALFDUPLEX 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Baud Rates: 14.4k
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: 28-PLCC (11.51x11.51)
Part Status: Obsolete
Description: IC MODEM S-FSK HALFDUPLEX 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Baud Rates: 14.4k
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: 28-PLCC (11.51x11.51)
Part Status: Obsolete
на замовлення 236 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 860.45 грн |
| LC7574FE-USV-E |
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 114+ | 191.30 грн |
| NVMFS6H864NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 30.95 грн |
| 3000+ | 25.96 грн |
| 4500+ | 25.51 грн |
| NVMFS6H864NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
на замовлення 16459 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.95 грн |
| 10+ | 65.29 грн |
| 100+ | 43.77 грн |
| 500+ | 32.26 грн |
| 2SD1827 |
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Виробник: onsemi
Description: TRANS NPN DARL 60V 10A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 2V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: TRANS NPN DARL 60V 10A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 2V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
на замовлення 1204 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 349+ | 57.69 грн |
| NRVBD640CTG-VF01 |
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Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 40V 3A DPAK
Description: DIODE ARRAY SCHOTTKY 40V 3A DPAK
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| 2SA1391S |
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Виробник: onsemi
Description: TRANS PNP 50V 0.2A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1mA, 6V
Frequency - Transition: 200MHz
Supplier Device Package: 3-NP
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Description: TRANS PNP 50V 0.2A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1mA, 6V
Frequency - Transition: 200MHz
Supplier Device Package: 3-NP
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2597+ | 8.17 грн |
| 2SA1346-SSH-AC |
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Виробник: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Supplier Device Package: 3-SPA
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Supplier Device Package: 3-SPA
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1297+ | 15.31 грн |
| 2SA1346-AC |
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Виробник: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Supplier Device Package: 3-SPA
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Supplier Device Package: 3-SPA
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1069+ | 18.64 грн |
| 2SA1338-6-TB-E |
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на замовлення 199205 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 865+ | 23.30 грн |
| 2SA1352E |
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Виробник: onsemi
Description: TRANS PNP 200V 0.1A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.2 W
Description: TRANS PNP 200V 0.1A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.2 W
на замовлення 11570 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 673+ | 30.08 грн |
| 2SA1341-TB-E |
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на замовлення 162000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 649+ | 30.63 грн |
| 2SA1342-TB-E |
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на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 649+ | 30.63 грн |
| 2SA1338-5-TB-E |
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на замовлення 1273250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 550+ | 36.62 грн |
| MC74HC237FEL |
Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 3:8
Packaging: Bulk
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Part Status: Active
Description: IC DECODER/DEMUX 1 X 3:8
Packaging: Bulk
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Part Status: Active
на замовлення 43000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1010+ | 19.80 грн |
| MC74HC237FR2 |
Виробник: onsemi
Description: 1-OF-8 DCDR/DMLTPLXR LATH
Packaging: Bulk
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Part Status: Active
Description: 1-OF-8 DCDR/DMLTPLXR LATH
Packaging: Bulk
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| NSRM30CM3T5G |
Виробник: onsemi
Description: IC DIODE SCHOTTKY SOT-723
Description: IC DIODE SCHOTTKY SOT-723
на замовлення 56000 шт:
термін постачання 21-31 дні (днів)
| P5P2308AF-216SR |
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Виробник: onsemi
Description: IC BUFFER ZERO DELAY 3.3V 16SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: Yes/Yes
PLL: Yes with Bypass
Supplier Device Package: 16-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:8
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Frequency - Max: 133MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC BUFFER ZERO DELAY 3.3V 16SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: Yes/Yes
PLL: Yes with Bypass
Supplier Device Package: 16-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:8
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Frequency - Max: 133MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 533+ | 40.72 грн |
| NCN5130ASGEVB |
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Виробник: onsemi
Description: EVAL BOARD FOR NCN5130
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: NCN5130
Type: Interface
Function: KNX
Contents: Board(s)
Packaging: Box
Description: EVAL BOARD FOR NCN5130
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: NCN5130
Type: Interface
Function: KNX
Contents: Board(s)
Packaging: Box
товару немає в наявності
В кошику
од. на суму грн.
| NCN5110ASGEVB |
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Виробник: onsemi
Description: EVAL BOARD FOR NCN5110
Packaging: Bulk
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: NCN5110
Type: Interface
Function: KNX
Description: EVAL BOARD FOR NCN5110
Packaging: Bulk
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: NCN5110
Type: Interface
Function: KNX
товару немає в наявності
В кошику
од. на суму грн.





























