| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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NRVUS1KFA | onsemi |
Description: DIODE STANDARD 800V 1A SOD123FLQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MC74HC74AFL1 | onsemi |
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOICPackaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
на замовлення 44115 шт: термін постачання 21-31 дні (днів) |
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MC74HC74AFR1 | onsemi |
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOICPackaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
на замовлення 13000 шт: термін постачання 21-31 дні (днів) |
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MC74HC74AFR2 | onsemi |
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOICPackaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| SCHC74ADTR2G | onsemi |
Description: SCHC74ADTR2G Part Status: Active Packaging: Bulk DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FPF2G120BF07ASP | onsemi |
Description: IGBT MODULE 650V 40A 156W F2Package / Case: Module Packaging: Bulk IGBT Type: Field Stop Supplier Device Package: F2 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 3 Independent Input: Standard Mounting Type: Through Hole Current - Collector Cutoff (Max): 250 µA Power - Max: 156 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 40 A |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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NTD110N02RG | onsemi |
Description: MOSFET N-CH 24V 12.5A/110A DPAKInput Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Drain to Source Voltage (Vdss): 24 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.5W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
на замовлення 680 шт: термін постачання 21-31 дні (днів) |
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NTD110N02R-001G | onsemi |
Description: MOSFET N-CH 24V 12.5A/110A IPAKPower Dissipation (Max): 1.5W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Drain to Source Voltage (Vdss): 24 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 2V @ 250µA |
на замовлення 17861 шт: термін постачання 21-31 дні (днів) |
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1N5253BRL | onsemi |
Description: DIODE ZENER 25V UNIDIRECTIONALPackaging: Bulk |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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MMSZ4712ET1 | onsemi |
Description: DIODE ZENER 500MW 2PIN SOD123 Packaging: Bulk |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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MMSZ5238ET1 | onsemi |
Description: DIODE ZENER 8.7V 500MW 2PIN SO Packaging: Bulk |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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2SB986T | onsemi |
Description: POWER BIPOLAR TRANSISTOR, PNPCurrent - Collector Cutoff (Max): 1mA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Power - Max: 1.2 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-126 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Part Status: Active Packaging: Bulk |
на замовлення 8943 шт: термін постачання 21-31 дні (днів) |
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2SD1348SC-T-ND | onsemi |
Description: TRANS NPN 50V 4A TO-126Power - Max: 1.2 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-126 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Current - Collector Cutoff (Max): 1mA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Part Status: Active Packaging: Bulk |
на замовлення 40062 шт: термін постачання 21-31 дні (днів) |
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2SD1348T | onsemi |
Description: TRANS NPN 50V 4A TO-126Power - Max: 1.2 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-126 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 1mA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Part Status: Active Packaging: Bulk |
на замовлення 18473 шт: термін постачання 21-31 дні (днів) |
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2SD1347S | onsemi |
Description: TRANS NPN 50V 3A 3-MPPart Status: Active Packaging: Bulk Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: 3-MP Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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| 2SD1347T | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSTR NPNPart Status: Active Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 2SD1348S | onsemi |
Description: POWER BIPOLAR TRANSISTOR NPNPart Status: Active Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 2SD1347T-AE | onsemi |
Description: TRANS NPN 50V 3A 3-MPPart Status: Active Packaging: Bulk Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: 3-MP Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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NZ9F6V8ST5G | onsemi |
Description: DIODE ZENER 6.8V 200MW SOD923 |
на замовлення 146 шт: термін постачання 21-31 дні (днів) |
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| NCP81101BMNTXG | onsemi |
Description: IC REG BUCK CTLR 1PH 28QFNSupplier Device Package: 28-QFN (5x5) Mounting Type: Surface Mount Package / Case: 28-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3937 шт: термін постачання 21-31 дні (днів) |
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NCV8164CMTW290TAG | onsemi |
Description: IC REG LINEAR 2.9V 300MA 6WDFNW Qualification: AEC-Q100 Protection Features: Over Current, Over Temperature PSRR: 83dB ~ 61dB (100Hz ~ 100kHz) Grade: Automotive Control Features: Enable, Power Good Voltage - Output (Min/Fixed): 2.9V Supplier Device Package: 6-WDFNW (2x2) Number of Regulators: 1 Voltage - Input (Max): 5V Current - Quiescent (Iq): 40 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 300mA Mounting Type: Surface Mount, Wettable Flank Output Type: Fixed Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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LC06511D02MXTAG | onsemi |
Description: IC BATT PROT LI-ION 1CELL 6X2DFN Operating Temperature: -40°C ~ 85°C (TA) Function: Battery Protection Mounting Type: Surface Mount Number of Cells: 1 Package / Case: 6-XFDFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Obsolete Fault Protection: Over Current, Over Temperature Supplier Device Package: 6-X2DFN (1.4x1.4) Battery Chemistry: Lithium Ion/Polymer |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTTFS5D1N06HLTAG | onsemi |
Description: MOSFET N-CH 60V 18A/78A 8WDFNInput Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 80µA Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H888NLTAG | onsemi |
Description: MOSFET N-CH 80V 4.9A/14A 8WDFNVgs(th) (Max) @ Id: 2V @ 15µA Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) |
на замовлення 84000 шт: термін постачання 21-31 дні (днів) |
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NTTFS6H880NLTAG | onsemi |
Description: MOSFET N-CH 80V 6.6A/22A 8WDFNInput Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 20µA Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NTTFS6H860NLTAG | onsemi |
Description: MOSFET N-CH 80V 8.1A/30A 8WDFNSupplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 30µA Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NTTFS6H854NLTAG | onsemi |
Description: MOSFET N-CH 80V 10A/41A 8WDFNInput Capacitance (Ciss) (Max) @ Vds: 902 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 45µA Power Dissipation (Max): 3.2W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H860NLTAG | onsemi |
Description: MOSFET N-CH 80V 8.1A/30A 8WDFNQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 30µA Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H880NLWFTAG | onsemi |
Description: MOSFET N-CH 80V 6.6A/22A 8WDFNTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 20µA Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc) FET Type: N-Channel |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVTFS6H860NLWFTAG | onsemi |
Description: MOSFET N-CH 80V 8.1A/30A 8WDFNQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 30µA Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 289500 шт: термін постачання 21-31 дні (днів) |
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NTLJS4D7N03HTAG | onsemi |
Description: MOSFET N-CH 25V 11.6A 6PQFN Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NTTFS8D1N08HTAG | onsemi | Description: MOSFET N-CH 80V 14A/61A 8WDFN |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||
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NRVTSM260EV2T1G | onsemi |
Description: DIODE SCHOTTKY 60V 2A POWERMITEQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 12 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: Powermite Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-216AA Packaging: Tape & Reel (TR) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NRVTSM260EV2T1G | onsemi |
Description: DIODE SCHOTTKY 60V 2A POWERMITEQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 12 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: Powermite Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-216AA Packaging: Cut Tape (CT) |
на замовлення 13622 шт: термін постачання 21-31 дні (днів) |
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NTLJS4D9N03HTAG | onsemi |
Description: MOSFET N-CH 30V 9.5A 6PQFN Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NCV59745AMW1015TAG | onsemi |
Description: IC REG LINEAR 1.015V 3A 20-QFNWProtection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Voltage Dropout (Max): 1.4V @ 3A PSRR: 75dB ~ 18dB (1kHz ~ 3MHz) Part Status: Active Control Features: Enable, Power Good, Soft Start Voltage - Output (Min/Fixed): 1.015V Supplier Device Package: 20-QFNW (4x4) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 2 mA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 3A Mounting Type: Surface Mount, Wettable Flank Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive Output Type: Fixed Package / Case: 20-VFQFN Exposed Pad |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NCV8187AMT110TAG | onsemi |
Description: IC REG LINEAR 1.1V 1.2A 6WDFN Protection Features: Over Current, Over Temperature PSRR: 75dB (1kHz) Control Features: Enable, Power Good, Soft Start Voltage - Output (Min/Fixed): 1.1V Supplier Device Package: 6-WDFN (2x2) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 45 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Current - Output: 1.2A Qualification: AEC-Q100 Grade: Automotive |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NCV8187AMTW110TAG | onsemi |
Description: IC REG LINEAR 1.1V 1.2A 6WDFN Supplier Device Package: 6-WDFN (2x2) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 45 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 1.2A Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Protection Features: Over Current, Over Temperature PSRR: 75dB (1kHz) Control Features: Enable, Power Good, Soft Start Voltage - Output (Min/Fixed): 1.1V Qualification: AEC-Q100 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NCP114AMX090TAG | onsemi |
Description: IC REG LINEAR 0.9V 300MA 4-UDFNPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-UDFN (1.0x1.0) Voltage - Output (Min/Fixed): 0.9V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MBRS2040LT3 | onsemi |
Description: RECTIFIER DIODE |
на замовлення 17768 шт: термін постачання 21-31 дні (днів) |
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MC33567D-002 | onsemi |
Description: LDO CNTRLR REG 2.525V 8PIN SOICPart Status: Active Packaging: Bulk Number of Outputs: 2 Supplier Device Package: 8-SOIC Current - Supply: 6.3mA Operating Temperature: 0°C ~ 80°C Type: Positive Fixed Voltage - Input: 9V ~ 12.5V Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) |
на замовлення 1862 шт: термін постачання 21-31 дні (днів) |
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VMC10E111FNR2 | onsemi |
Description: CLOCK FANOUT BUFFER 9-OUT 28PIN Packaging: Bulk Part Status: Active |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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VMC10E111FN | onsemi |
Description: CLOCK FANOUT BUFFER 9-OUT 28PIN Part Status: Active Packaging: Bulk |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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| NSTHS4101PT1G | onsemi |
Description: COMP CPFET 20V 6.7A 34MOH Part Status: Active Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NTHS4111PT1 | onsemi |
Description: P-CHANNEL MOSFETPart Status: Active Packaging: Bulk |
на замовлення 24600 шт: термін постачання 21-31 дні (днів) |
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NTHS4111PT1G | onsemi |
Description: MOSFET P-CH 30V 3.3A CHIPFETInput Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 24 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: ChipFET™ Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Bulk |
на замовлення 1562 шт: термін постачання 21-31 дні (днів) |
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MC100EL16DR2 | onsemi |
Description: IC RCVR ECL DIFFERENTL 5V 8-SOICSupplier Device Package: 8-SOIC Supply Voltage: 4.2V ~ 5.7V Operating Temperature: -40°C ~ 85°C Logic Type: Differential Receiver Number of Bits: 1 Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
на замовлення 8930 шт: термін постачання 21-31 дні (днів) |
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MC100EL16DTG | onsemi |
Description: IC RCVR ECL DIFFERENTL 5V 8TSSOPSupplier Device Package: 8-TSSOP Supply Voltage: 4.2V ~ 5.7V Operating Temperature: -40°C ~ 85°C Logic Type: Differential Receiver Number of Bits: 1 Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Bulk |
на замовлення 3513 шт: термін постачання 21-31 дні (днів) |
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MBRD340T4 | onsemi |
Description: DIODE SCHOTTKY 40V 3A DPAKCurrent - Reverse Leakage @ Vr: 200 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Supplier Device Package: DPAK Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
на замовлення 156708 шт: термін постачання 21-31 дні (днів) |
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MBRD320T4 | onsemi |
Description: DEVELOPMENT KITS/ACCESSORIES |
на замовлення 101950 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1519 шт В кошику од. на суму грн. | ||||||||||||||
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SN74LS32ML1 | onsemi |
Description: IC GATE ORPackaging: Bulk Part Status: Active |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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CAT25080YI-G-ON | onsemi |
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOPMemory Organization: 1K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-TSSOP Memory Format: EEPROM Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 8Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SZP40142RL | onsemi |
Description: IC REG LINEAR 5W SPCL SUR40 TR Packaging: Bulk |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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2SC2274F | onsemi |
Description: TRANS NPN 50V 0.5A 3-NPPart Status: Active Packaging: Bulk Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: 3-NP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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MC74ACT241DTR2G | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP |
на замовлення 9930 шт: термін постачання 21-31 дні (днів) |
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MT9P006I12STCU-DP | onsemi |
Description: SENSOR IMAGEPackaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 2.2µm x 2.2µm Active Pixel Array: 2592H x 1944V Supplier Device Package: 48-ILCC (10x10) Frames per Second: 60.0 |
товару немає в наявності |
Мінімальне замовлення: 2400 шт В кошику од. на суму грн. | ||||||||||||||
| 21080-001-XTD | onsemi |
Description: RS601 Part Status: Active Packaging: Bulk DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TURC160TS1 | onsemi |
Description: UFR IN SURFTAPE Packaging: Bulk |
на замовлення 67827 шт: термін постачання 21-31 дні (днів) |
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| TURC160TR | onsemi |
Description: REC DIE/WAFER ULTRAFAST Packaging: Bulk Part Status: Active |
на замовлення 25462 шт: термін постачання 21-31 дні (днів) |
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DTC124E | onsemi |
Description: TRANS DIGITAL BJT NPN 50V 100MAPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
| NRVUS1KFA |
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Виробник: onsemi
Description: DIODE STANDARD 800V 1A SOD123FL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 800V 1A SOD123FL
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC74HC74AFL1 |
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Виробник: onsemi
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 44115 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1817+ | 11.54 грн |
| MC74HC74AFR1 |
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Виробник: onsemi
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1817+ | 11.54 грн |
| MC74HC74AFR2 |
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Виробник: onsemi
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1817+ | 11.54 грн |
| SCHC74ADTR2G |
Виробник: onsemi
Description: SCHC74ADTR2G
Part Status: Active
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: SCHC74ADTR2G
Part Status: Active
Packaging: Bulk
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| FPF2G120BF07ASP |
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Виробник: onsemi
Description: IGBT MODULE 650V 40A 156W F2
Package / Case: Module
Packaging: Bulk
IGBT Type: Field Stop
Supplier Device Package: F2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 Independent
Input: Standard
Mounting Type: Through Hole
Current - Collector Cutoff (Max): 250 µA
Power - Max: 156 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Description: IGBT MODULE 650V 40A 156W F2
Package / Case: Module
Packaging: Bulk
IGBT Type: Field Stop
Supplier Device Package: F2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 Independent
Input: Standard
Mounting Type: Through Hole
Current - Collector Cutoff (Max): 250 µA
Power - Max: 156 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 7531.27 грн |
| NTD110N02RG |
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Виробник: onsemi
Description: MOSFET N-CH 24V 12.5A/110A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: MOSFET N-CH 24V 12.5A/110A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
на замовлення 680 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 680+ | 31.23 грн |
| NTD110N02R-001G |
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Виробник: onsemi
Description: MOSFET N-CH 24V 12.5A/110A IPAK
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Description: MOSFET N-CH 24V 12.5A/110A IPAK
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
на замовлення 17861 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 683+ | 31.52 грн |
| 1N5253BRL |
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на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11539+ | 2.15 грн |
| MMSZ4712ET1 |
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12000+ | 2.13 грн |
| MMSZ5238ET1 |
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3620+ | 5.37 грн |
| 2SB986T |
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Виробник: onsemi
Description: POWER BIPOLAR TRANSISTOR, PNP
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Part Status: Active
Packaging: Bulk
Description: POWER BIPOLAR TRANSISTOR, PNP
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Part Status: Active
Packaging: Bulk
на замовлення 8943 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2664+ | 7.94 грн |
| 2SD1348SC-T-ND |
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Виробник: onsemi
Description: TRANS NPN 50V 4A TO-126
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Part Status: Active
Packaging: Bulk
Description: TRANS NPN 50V 4A TO-126
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Part Status: Active
Packaging: Bulk
на замовлення 40062 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1025+ | 20.77 грн |
| 2SD1348T |
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Виробник: onsemi
Description: TRANS NPN 50V 4A TO-126
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Part Status: Active
Packaging: Bulk
Description: TRANS NPN 50V 4A TO-126
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Part Status: Active
Packaging: Bulk
на замовлення 18473 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1025+ | 20.77 грн |
| 2SD1347S |
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Виробник: onsemi
Description: TRANS NPN 50V 3A 3-MP
Part Status: Active
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: 3-MP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Description: TRANS NPN 50V 3A 3-MP
Part Status: Active
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: 3-MP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 683+ | 32.71 грн |
| 2SD1347T-AE |
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Виробник: onsemi
Description: TRANS NPN 50V 3A 3-MP
Part Status: Active
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: 3-MP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Description: TRANS NPN 50V 3A 3-MP
Part Status: Active
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: 3-MP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 683+ | 32.71 грн |
| NZ9F6V8ST5G |
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Виробник: onsemi
Description: DIODE ZENER 6.8V 200MW SOD923
Description: DIODE ZENER 6.8V 200MW SOD923
на замовлення 146 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.63 грн |
| 16+ | 19.89 грн |
| 100+ | 10.54 грн |
| NCP81101BMNTXG |
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Виробник: onsemi
Description: IC REG BUCK CTLR 1PH 28QFN
Supplier Device Package: 28-QFN (5x5)
Mounting Type: Surface Mount
Package / Case: 28-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG BUCK CTLR 1PH 28QFN
Supplier Device Package: 28-QFN (5x5)
Mounting Type: Surface Mount
Package / Case: 28-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3937 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.37 грн |
| 10+ | 110.09 грн |
| 25+ | 103.86 грн |
| 100+ | 83.06 грн |
| 250+ | 77.99 грн |
| 500+ | 68.24 грн |
| 1000+ | 55.62 грн |
| NCV8164CMTW290TAG |
Виробник: onsemi
Description: IC REG LINEAR 2.9V 300MA 6WDFNW
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Grade: Automotive
Control Features: Enable, Power Good
Voltage - Output (Min/Fixed): 2.9V
Supplier Device Package: 6-WDFNW (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount, Wettable Flank
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 2.9V 300MA 6WDFNW
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Grade: Automotive
Control Features: Enable, Power Good
Voltage - Output (Min/Fixed): 2.9V
Supplier Device Package: 6-WDFNW (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount, Wettable Flank
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| LC06511D02MXTAG |
Виробник: onsemi
Description: IC BATT PROT LI-ION 1CELL 6X2DFN
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Fault Protection: Over Current, Over Temperature
Supplier Device Package: 6-X2DFN (1.4x1.4)
Battery Chemistry: Lithium Ion/Polymer
Description: IC BATT PROT LI-ION 1CELL 6X2DFN
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Fault Protection: Over Current, Over Temperature
Supplier Device Package: 6-X2DFN (1.4x1.4)
Battery Chemistry: Lithium Ion/Polymer
товару немає в наявності
В кошику
од. на суму грн.
| NTTFS5D1N06HLTAG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 18A/78A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 18A/78A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 42.08 грн |
| 3000+ | 38.15 грн |
| NVTFS6H888NLTAG |
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Виробник: onsemi
Description: MOSFET N-CH 80V 4.9A/14A 8WDFN
Vgs(th) (Max) @ Id: 2V @ 15µA
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Description: MOSFET N-CH 80V 4.9A/14A 8WDFN
Vgs(th) (Max) @ Id: 2V @ 15µA
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 19.17 грн |
| 3000+ | 16.90 грн |
| 4500+ | 16.11 грн |
| 7500+ | 14.28 грн |
| 10500+ | 13.79 грн |
| 15000+ | 13.31 грн |
| 37500+ | 12.91 грн |
| NTTFS6H880NLTAG |
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Виробник: onsemi
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 16.85 грн |
| 3000+ | 14.83 грн |
| 4500+ | 14.11 грн |
| NTTFS6H860NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 19.06 грн |
| 3000+ | 16.81 грн |
| 4500+ | 16.02 грн |
| 7500+ | 14.20 грн |
| 10500+ | 13.71 грн |
| NTTFS6H854NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 10A/41A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 45µA
Power Dissipation (Max): 3.2W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 10A/41A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 45µA
Power Dissipation (Max): 3.2W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 22.33 грн |
| NVTFS6H860NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 32.33 грн |
| 3000+ | 28.77 грн |
| NVTFS6H880NLWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
FET Type: N-Channel
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 23.02 грн |
| NVTFS6H860NLWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 289500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 27.95 грн |
| 3000+ | 26.40 грн |
| 4500+ | 25.89 грн |
| NTLJS4D7N03HTAG |
Виробник: onsemi
Description: MOSFET N-CH 25V 11.6A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 11.6A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| NTTFS8D1N08HTAG |
Виробник: onsemi
Description: MOSFET N-CH 80V 14A/61A 8WDFN
Description: MOSFET N-CH 80V 14A/61A 8WDFN
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NRVTSM260EV2T1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.88 грн |
| 6000+ | 7.82 грн |
| 9000+ | 7.64 грн |
| NRVTSM260EV2T1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Cut Tape (CT)
на замовлення 13622 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.50 грн |
| 13+ | 23.56 грн |
| 100+ | 16.35 грн |
| 500+ | 11.62 грн |
| 1000+ | 10.41 грн |
| NTLJS4D9N03HTAG |
Виробник: onsemi
Description: MOSFET N-CH 30V 9.5A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 9.5A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCV59745AMW1015TAG |
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Виробник: onsemi
Description: IC REG LINEAR 1.015V 3A 20-QFNW
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 1.4V @ 3A
PSRR: 75dB ~ 18dB (1kHz ~ 3MHz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 1.015V
Supplier Device Package: 20-QFNW (4x4)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 3A
Mounting Type: Surface Mount, Wettable Flank
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Output Type: Fixed
Package / Case: 20-VFQFN Exposed Pad
Description: IC REG LINEAR 1.015V 3A 20-QFNW
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 1.4V @ 3A
PSRR: 75dB ~ 18dB (1kHz ~ 3MHz)
Part Status: Active
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 1.015V
Supplier Device Package: 20-QFNW (4x4)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 3A
Mounting Type: Surface Mount, Wettable Flank
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Output Type: Fixed
Package / Case: 20-VFQFN Exposed Pad
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 76.98 грн |
| 6000+ | 72.65 грн |
| NCV8187AMT110TAG |
Виробник: onsemi
Description: IC REG LINEAR 1.1V 1.2A 6WDFN
Protection Features: Over Current, Over Temperature
PSRR: 75dB (1kHz)
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 1.1V
Supplier Device Package: 6-WDFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Output: 1.2A
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG LINEAR 1.1V 1.2A 6WDFN
Protection Features: Over Current, Over Temperature
PSRR: 75dB (1kHz)
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 1.1V
Supplier Device Package: 6-WDFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Output: 1.2A
Qualification: AEC-Q100
Grade: Automotive
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.87 грн |
| 6000+ | 17.50 грн |
| NCV8187AMTW110TAG |
Виробник: onsemi
Description: IC REG LINEAR 1.1V 1.2A 6WDFN
Supplier Device Package: 6-WDFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 1.2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
PSRR: 75dB (1kHz)
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 1.1V
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG LINEAR 1.1V 1.2A 6WDFN
Supplier Device Package: 6-WDFN (2x2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 45 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 1.2A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
PSRR: 75dB (1kHz)
Control Features: Enable, Power Good, Soft Start
Voltage - Output (Min/Fixed): 1.1V
Qualification: AEC-Q100
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCP114AMX090TAG |
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Виробник: onsemi
Description: IC REG LINEAR 0.9V 300MA 4-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.9V 300MA 4-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.15 грн |
| MBRS2040LT3 |
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Виробник: onsemi
Description: RECTIFIER DIODE
Description: RECTIFIER DIODE
на замовлення 17768 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2219+ | 10.33 грн |
| MC33567D-002 |
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Виробник: onsemi
Description: LDO CNTRLR REG 2.525V 8PIN SOIC
Part Status: Active
Packaging: Bulk
Number of Outputs: 2
Supplier Device Package: 8-SOIC
Current - Supply: 6.3mA
Operating Temperature: 0°C ~ 80°C
Type: Positive Fixed
Voltage - Input: 9V ~ 12.5V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description: LDO CNTRLR REG 2.525V 8PIN SOIC
Part Status: Active
Packaging: Bulk
Number of Outputs: 2
Supplier Device Package: 8-SOIC
Current - Supply: 6.3mA
Operating Temperature: 0°C ~ 80°C
Type: Positive Fixed
Voltage - Input: 9V ~ 12.5V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
на замовлення 1862 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 790+ | 25.87 грн |
| VMC10E111FNR2 |
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 94+ | 232.44 грн |
| VMC10E111FN |
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 67+ | 324.84 грн |
| NTHS4111PT1 |
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на замовлення 24600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1480+ | 14.90 грн |
| NTHS4111PT1G |
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Виробник: onsemi
Description: MOSFET P-CH 30V 3.3A CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Bulk
Description: MOSFET P-CH 30V 3.3A CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: ChipFET™
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Bulk
на замовлення 1562 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1562+ | 14.90 грн |
| MC100EL16DR2 |
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Виробник: onsemi
Description: IC RCVR ECL DIFFERENTL 5V 8-SOIC
Supplier Device Package: 8-SOIC
Supply Voltage: 4.2V ~ 5.7V
Operating Temperature: -40°C ~ 85°C
Logic Type: Differential Receiver
Number of Bits: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC RCVR ECL DIFFERENTL 5V 8-SOIC
Supplier Device Package: 8-SOIC
Supply Voltage: 4.2V ~ 5.7V
Operating Temperature: -40°C ~ 85°C
Logic Type: Differential Receiver
Number of Bits: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
на замовлення 8930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 207+ | 103.37 грн |
| MC100EL16DTG |
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Виробник: onsemi
Description: IC RCVR ECL DIFFERENTL 5V 8TSSOP
Supplier Device Package: 8-TSSOP
Supply Voltage: 4.2V ~ 5.7V
Operating Temperature: -40°C ~ 85°C
Logic Type: Differential Receiver
Number of Bits: 1
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Bulk
Description: IC RCVR ECL DIFFERENTL 5V 8TSSOP
Supplier Device Package: 8-TSSOP
Supply Voltage: 4.2V ~ 5.7V
Operating Temperature: -40°C ~ 85°C
Logic Type: Differential Receiver
Number of Bits: 1
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Bulk
на замовлення 3513 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 93+ | 229.41 грн |
| MBRD340T4 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 3A DPAK
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Supplier Device Package: DPAK
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: DIODE SCHOTTKY 40V 3A DPAK
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Supplier Device Package: DPAK
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
на замовлення 156708 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1402+ | 15.61 грн |
| MBRD320T4 |
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Виробник: onsemi
Description: DEVELOPMENT KITS/ACCESSORIES
Description: DEVELOPMENT KITS/ACCESSORIES
на замовлення 101950 шт:
термін постачання 21-31 дні (днів)
| SN74LS32ML1 |
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на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1817+ | 11.57 грн |
| CAT25080YI-G-ON |
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Виробник: onsemi
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Memory Organization: 1K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Memory Organization: 1K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SZP40142RL |
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1397+ | 14.09 грн |
| 2SC2274F |
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Виробник: onsemi
Description: TRANS NPN 50V 0.5A 3-NP
Part Status: Active
Packaging: Bulk
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: 3-NP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Description: TRANS NPN 50V 0.5A 3-NP
Part Status: Active
Packaging: Bulk
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: 3-NP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2597+ | 7.99 грн |
| MC74ACT241DTR2G |
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Виробник: onsemi
Description: IC BUFF NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Description: IC BUFF NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
на замовлення 9930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.91 грн |
| 10+ | 54.30 грн |
| 25+ | 51.51 грн |
| 100+ | 37.13 грн |
| 250+ | 32.81 грн |
| 500+ | 31.08 грн |
| 1000+ | 23.78 грн |
| MT9P006I12STCU-DP |
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Виробник: onsemi
Description: SENSOR IMAGE
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 60.0
Description: SENSOR IMAGE
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 60.0
товару немає в наявності
Мінімальне замовлення: 2400 шт
В кошику
од. на суму грн.
| 21080-001-XTD |
Виробник: onsemi
Description: RS601
Part Status: Active
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: RS601
Part Status: Active
Packaging: Bulk
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TURC160TS1 |
на замовлення 67827 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1664+ | 12.79 грн |



































