| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NCV8508D2T50R4 | onsemi |
Description: IC REG LINEAR 5V 250MA D2PAK-7Packaging: Bulk Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: D2PAK-7 Voltage - Output (Min/Fixed): 5V Control Features: Enable, Reset, Watchdog Grade: Automotive Voltage Dropout (Max): 0.9V @ 150mA Protection Features: Over Temperature, Short Circuit Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NCV8508DW50R2 | onsemi |
Description: IC REG LINEAR 5V 250MA 16SOICPackaging: Bulk Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 16-SOIC Voltage - Output (Min/Fixed): 5V Control Features: Enable, Reset, Watchdog Grade: Automotive Voltage Dropout (Max): 0.9V @ 150mA Protection Features: Over Temperature, Short Circuit Qualification: AEC-Q100 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NCV85082BPD33R2G | onsemi |
Description: IC REG LINEAR 3.3V 250MA 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 8-SOIC-EP Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Reset, Watchdog Grade: Automotive Protection Features: Over Temperature, Short Circuit Qualification: AEC-Q100 |
на замовлення 9487 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NCV8508DW50G | onsemi |
Description: IC REG LINEAR 5V 250MA 16SOICPackaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 16-SOIC Voltage - Output (Min/Fixed): 5V Control Features: Enable, Reset, Watchdog Grade: Automotive Voltage Dropout (Max): 0.9V @ 150mA Protection Features: Over Temperature, Short Circuit Qualification: AEC-Q100 |
на замовлення 3460 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| 2SC4983-6-TB-E | onsemi |
Description: BIP NPN 1A 15V Packaging: Bulk Part Status: Active |
на замовлення 138500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
| 2SC4984T-TD-E | onsemi |
Description: BIP NPN 1.5A 15V Packaging: Bulk Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
| 2SC4910-AY | onsemi |
Description: POWER BIPOLAR TRANSISTOR NPNPackaging: Bulk |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
2SB1126-TD-E | onsemi |
Description: TRANS PNP 50V 1.5A PCPPackaging: Bulk Part Status: Active Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BZX84C33LT1 | onsemi |
Description: DIODE ZENER 33V 225MW SOT23-3Packaging: Bulk Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V |
на замовлення 243000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SZBZX84C33LT1 | onsemi |
Description: DIODE ZENER 33V 225MW SOT23Packaging: Bulk Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 75000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTP90N02 | onsemi |
Description: MOSFET N-CH 24V 90A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V |
на замовлення 2880 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTB90N02T4 | onsemi |
Description: MOSFET N-CH 24V 90A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTB90N02T4G | onsemi |
Description: MOSFET N-CH 24V 90A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V |
на замовлення 5795 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DTC143ZM3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT723Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DTC143ZM3T5G | onsemi |
Description: TRANS PREBIAS NPN 50V SOT723Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 6543 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ESD5101AFCT5G | onsemi |
Description: TVS DIODE 3.3VWM 6.5VC 2DSN Packaging: Tape & Reel (TR) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 5.5pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 2-DSN (0.44x0.23) Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.68V Voltage - Clamping (Max) @ Ipp: 6.5V Power Line Protection: No |
на замовлення 8630 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
MMBZ5235ELT1G | onsemi |
Description: DIODE ZENER 6.8V 225MW SOT23-3Packaging: Bulk Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 5 V |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MMBZ5235ELT1 | onsemi |
Description: DIODE ZENER 6.8V 225MW SOT23-3Packaging: Bulk Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 5 V |
на замовлення 23889 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MMBZ5235BLT3 | onsemi |
Description: DIODE ZENER 6.8V 225MW SOT23-3Packaging: Bulk Part Status: Active |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MMBZ5235BLT1 | onsemi |
Description: DIODE ZENER 6.8V 225MW SOT-23Packaging: Bulk Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 5 V |
на замовлення 162000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SCR5287RLRE | onsemi |
Description: THY T092 SPECIAL SCR Packaging: Bulk Part Status: Active |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SCR5258 | onsemi |
Description: THY T092 SPECIAL SCR Packaging: Bulk Part Status: Active |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| SCR5285RLRP | onsemi |
Description: THY T092 SPECIAL SCR TR Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
SCR5290RLRA | onsemi |
Description: THY T092 SPECIAL SCR Packaging: Bulk Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC100LVEL34DR2 | onsemi |
Description: IC CLOCK GENERATOR 16SOICPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: ECL Frequency - Max: 1.5GHz Type: Clock Generator Input: LVDS, NECL, PECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.8V Ratio - Input:Output: 1:4 Differential - Input:Output: Yes/Yes Supplier Device Package: 16-SOIC PLL: No Divider/Multiplier: Yes/No Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 2360 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| 2SD2198S-DL-E | onsemi |
Description: BIP NPN 5A 50V Packaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
|
NRVUS1KFA | onsemi |
Description: DIODE STANDARD 800V 1A SOD123FLPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
MC74HC74AFL1 | onsemi |
Description: IC FF D-TYPE DOUBLE 1BIT 14SOICPackaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
на замовлення 44115 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC74HC74AFR1 | onsemi |
Description: IC FF D-TYPE DOUBLE 1BIT 14SOICPackaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
на замовлення 13000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC74HC74AFR2 | onsemi |
Description: IC FF D-TYPE DOUBLE 1BIT 14SOICPackaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| SCHC74ADTR2G | onsemi |
Description: SCHC74ADTR2G Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FPF2G120BF07ASP | onsemi |
Description: IGBT MODULE 650V 40A 156W F2Packaging: Bulk Package / Case: Module Mounting Type: Through Hole Input: Standard Configuration: 3 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: F2 IGBT Type: Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 156 W Current - Collector Cutoff (Max): 250 µA |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
NTD110N02RG | onsemi |
Description: MOSFET N-CH 24V 12.5A/110A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V |
на замовлення 680 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTD110N02R-001G | onsemi |
Description: MOSFET N-CH 24V 12.5A/110A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V |
на замовлення 17861 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
1N5253BRL | onsemi |
Description: DIODE ZENER 25V UNIDIRECTIONALPackaging: Bulk |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MMSZ4712ET1 | onsemi |
Description: DIODE ZENER 500MW 2PIN SOD123 Packaging: Bulk |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MMSZ5238ET1 | onsemi |
Description: DIODE ZENER 8.7V 500MW 2PIN SO Packaging: Bulk |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
2SB986T | onsemi |
Description: POWER BIPOLAR TRANSISTOR, PNPPackaging: Bulk Part Status: Active Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.2 W |
на замовлення 8943 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
2SD1348SC-T-ND | onsemi |
Description: TRANS NPN 50V 4A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: TO-126 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.2 W |
на замовлення 40062 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
2SD1348T | onsemi |
Description: TRANS NPN 50V 4A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: TO-126 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.2 W |
на замовлення 18473 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
2SD1347S | onsemi |
Description: TRANS NPN 50V 3A 3-MPPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: 3-MP Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| 2SD1347T | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSTR NPNPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 2SD1348S | onsemi |
Description: POWER BIPOLAR TRANSISTOR NPNPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 2SD1347T-AE | onsemi |
Description: TRANS NPN 50V 3A 3-MPPackaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: 3-MP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
NZ9F6V8ST5G | onsemi |
Description: DIODE ZENER 6.8V 200MW SOD923 |
на замовлення 146 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| NCP81101BMNTXG | onsemi |
Description: IC REG BUCK CTLR 1PH 28QFNPackaging: Cut Tape (CT) Package / Case: 28-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 28-QFN (5x5) |
на замовлення 3937 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
NCV8164CMTW290TAG | onsemi |
Description: IC REG LINEAR 2.9V 300MA 6WDFNW Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 300mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 5V Number of Regulators: 1 Supplier Device Package: 6-WDFNW (2x2) Voltage - Output (Min/Fixed): 2.9V Control Features: Enable, Power Good Grade: Automotive PSRR: 83dB ~ 61dB (100Hz ~ 100kHz) Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
LC06511D02MXTAG | onsemi |
Description: IC BATT PROT LI-ION 1CELL 6X2DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 6-X2DFN (1.4x1.4) Fault Protection: Over Current, Over Temperature Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NTTFS5D1N06HLTAG | onsemi |
Description: MOSFET N-CH 60V 18A/78A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NVTFS6H888NLTAG | onsemi |
Description: MOSFET N-CH 80V 4.9A/14A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2V @ 15µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 84000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTTFS6H860NLTAG | onsemi |
Description: MOSFET N-CH 80V 8.1A/30A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTTFS6H854NLTAG | onsemi |
Description: MOSFET N-CH 80V 10A/41A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 40 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NVTFS6H860NLTAG | onsemi |
Description: MOSFET N-CH 80V 8.1A/30A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NVTFS6H860NLWFTAG | onsemi |
Description: MOSFET N-CH 80V 8.1A/30A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 289500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTLJS4D7N03HTAG | onsemi |
Description: MOSFET N-CH 25V 11.6A 6PQFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NTTFS8D1N08HTAG | onsemi | Description: MOSFET N-CH 80V 14A/61A 8WDFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
NRVTSM260EV2T1G | onsemi |
Description: DIODE SCHOTTKY 60V 2A POWERMITEPackaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Current - Reverse Leakage @ Vr: 12 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NRVTSM260EV2T1G | onsemi |
Description: DIODE SCHOTTKY 60V 2A POWERMITEPackaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Current - Reverse Leakage @ Vr: 12 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 13622 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTLJS4D9N03HTAG | onsemi |
Description: MOSFET N-CH 30V 9.5A 6PQFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NCV59745AMW1015TAG | onsemi |
Description: IC REG LINEAR 1.015V 3A 20-QFNWPackaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 mA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 20-QFNW (4x4) Voltage - Output (Min/Fixed): 1.015V Control Features: Enable, Power Good, Soft Start Part Status: Active PSRR: 75dB ~ 18dB (1kHz ~ 3MHz) Voltage Dropout (Max): 1.4V @ 3A Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Grade: Automotive Qualification: AEC-Q100 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
| NCV8508D2T50R4 |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 5V 250MA D2PAK-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-7
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Voltage Dropout (Max): 0.9V @ 150mA
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 250MA D2PAK-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-7
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Voltage Dropout (Max): 0.9V @ 150mA
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 579+ | 41.32 грн |
| NCV8508DW50R2 |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 5V 250MA 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 16-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Voltage Dropout (Max): 0.9V @ 150mA
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 250MA 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 16-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Voltage Dropout (Max): 0.9V @ 150mA
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 430+ | 52.19 грн |
| NCV85082BPD33R2G |
Виробник: onsemi
Description: IC REG LINEAR 3.3V 250MA 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 250MA 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 9487 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 247+ | 93.51 грн |
| NCV8508DW50G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 5V 250MA 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 16-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Voltage Dropout (Max): 0.9V @ 150mA
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 250MA 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 16-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
Voltage Dropout (Max): 0.9V @ 150mA
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 3460 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 214+ | 104.37 грн |
| 2SC4983-6-TB-E |
на замовлення 138500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5323+ | 4.98 грн |
| 2SC4984T-TD-E |
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1665+ | 13.80 грн |
| 2SC4910-AY |
![]() |
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 24.21 грн |
| 2SB1126-TD-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 50V 1.5A PCP
Packaging: Bulk
Part Status: Active
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS PNP 50V 1.5A PCP
Packaging: Bulk
Part Status: Active
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1137+ | 18.50 грн |
| BZX84C33LT1 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 33V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Description: DIODE ZENER 33V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
на замовлення 243000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9458+ | 2.30 грн |
| SZBZX84C33LT1 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 33V 225MW SOT23
Packaging: Bulk
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 33V 225MW SOT23
Packaging: Bulk
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4365+ | 5.36 грн |
| NTP90N02 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 24V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V
Description: MOSFET N-CH 24V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1110+ | 20.98 грн |
| NTB90N02T4 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 24V 90A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V
Description: MOSFET N-CH 24V 90A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1025+ | 22.54 грн |
| NTB90N02T4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 24V 90A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V
Description: MOSFET N-CH 24V 90A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 20 V
на замовлення 5795 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 523+ | 44.30 грн |
| DTC143ZM3T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
| DTC143ZM3T5G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 6543 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.43 грн |
| 32+ | 10.23 грн |
| 100+ | 6.35 грн |
| 500+ | 4.38 грн |
| 1000+ | 3.86 грн |
| 2000+ | 3.42 грн |
| ESD5101AFCT5G |
Виробник: onsemi
Description: TVS DIODE 3.3VWM 6.5VC 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5.5pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-DSN (0.44x0.23)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.68V
Voltage - Clamping (Max) @ Ipp: 6.5V
Power Line Protection: No
Description: TVS DIODE 3.3VWM 6.5VC 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5.5pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-DSN (0.44x0.23)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.68V
Voltage - Clamping (Max) @ Ipp: 6.5V
Power Line Protection: No
на замовлення 8630 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MMBZ5235ELT1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 6.8V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Description: DIODE ZENER 6.8V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15000+ | 1.66 грн |
| MMBZ5235ELT1 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 6.8V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Description: DIODE ZENER 6.8V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
на замовлення 23889 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15000+ | 1.66 грн |
| MMBZ5235BLT3 |
![]() |
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.30 грн |
| MMBZ5235BLT1 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 6.8V 225MW SOT-23
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Description: DIODE ZENER 6.8V 225MW SOT-23
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
на замовлення 162000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5323+ | 4.60 грн |
| SCR5287RLRE |
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4808+ | 4.98 грн |
| SCR5258 |
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2427+ | 9.19 грн |
| SCR5290RLRA |
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 451+ | 55.61 грн |
| MC100LVEL34DR2 |
![]() |
Виробник: onsemi
Description: IC CLOCK GENERATOR 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 1.5GHz
Type: Clock Generator
Input: LVDS, NECL, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.8V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-SOIC
PLL: No
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 1.5GHz
Type: Clock Generator
Input: LVDS, NECL, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.8V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-SOIC
PLL: No
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 123+ | 173.32 грн |
| 2SD2198S-DL-E |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 468+ | 50.85 грн |
| NRVUS1KFA |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 800V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE STANDARD 800V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC74AFL1 |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 44115 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1817+ | 12.19 грн |
| MC74HC74AFR1 |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1817+ | 12.19 грн |
| MC74HC74AFR2 |
![]() |
Виробник: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1817+ | 12.19 грн |
| SCHC74ADTR2G |
Виробник: onsemi
Description: SCHC74ADTR2G
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: SCHC74ADTR2G
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| FPF2G120BF07ASP |
![]() |
Виробник: onsemi
Description: IGBT MODULE 650V 40A 156W F2
Packaging: Bulk
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MODULE 650V 40A 156W F2
Packaging: Bulk
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
на замовлення 70 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 8048.93 грн |
| NTD110N02RG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 24V 12.5A/110A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
Description: MOSFET N-CH 24V 12.5A/110A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
на замовлення 680 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 680+ | 33.38 грн |
| NTD110N02R-001G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 24V 12.5A/110A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
Description: MOSFET N-CH 24V 12.5A/110A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
на замовлення 17861 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 683+ | 33.69 грн |
| 1N5253BRL |
![]() |
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11539+ | 2.30 грн |
| MMSZ4712ET1 |
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12000+ | 2.28 грн |
| MMSZ5238ET1 |
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3620+ | 5.74 грн |
| 2SB986T |
![]() |
Виробник: onsemi
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.2 W
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.2 W
на замовлення 8943 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2664+ | 8.49 грн |
| 2SD1348SC-T-ND |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.2 W
Description: TRANS NPN 50V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.2 W
на замовлення 40062 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1025+ | 22.20 грн |
| 2SD1348T |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.2 W
Description: TRANS NPN 50V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.2 W
на замовлення 18473 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1025+ | 22.20 грн |
| 2SD1347S |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 3A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 3A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 683+ | 34.96 грн |
| 2SD1347T-AE |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 3A 3-MP
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 3A 3-MP
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 683+ | 34.96 грн |
| NZ9F6V8ST5G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 6.8V 200MW SOD923
Description: DIODE ZENER 6.8V 200MW SOD923
на замовлення 146 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.39 грн |
| 16+ | 21.26 грн |
| 100+ | 11.26 грн |
| NCP81101BMNTXG |
![]() |
Виробник: onsemi
Description: IC REG BUCK CTLR 1PH 28QFN
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 28-QFN (5x5)
Description: IC REG BUCK CTLR 1PH 28QFN
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 28-QFN (5x5)
на замовлення 3937 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.12 грн |
| 10+ | 117.65 грн |
| 25+ | 111.00 грн |
| 100+ | 88.77 грн |
| 250+ | 83.36 грн |
| 500+ | 72.94 грн |
| 1000+ | 59.44 грн |
| NCV8164CMTW290TAG |
Виробник: onsemi
Description: IC REG LINEAR 2.9V 300MA 6WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: IC REG LINEAR 2.9V 300MA 6WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| LC06511D02MXTAG |
Виробник: onsemi
Description: IC BATT PROT LI-ION 1CELL 6X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 6-X2DFN (1.4x1.4)
Fault Protection: Over Current, Over Temperature
Part Status: Obsolete
Description: IC BATT PROT LI-ION 1CELL 6X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 6-X2DFN (1.4x1.4)
Fault Protection: Over Current, Over Temperature
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| NTTFS5D1N06HLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 18A/78A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V
Description: MOSFET N-CH 60V 18A/78A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 44.98 грн |
| 3000+ | 40.77 грн |
| NVTFS6H888NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 4.9A/14A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 4.9A/14A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V
Qualification: AEC-Q101
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 20.49 грн |
| 3000+ | 18.07 грн |
| 4500+ | 17.22 грн |
| 7500+ | 15.27 грн |
| 10500+ | 14.74 грн |
| 15000+ | 14.22 грн |
| 37500+ | 13.80 грн |
| NTTFS6H860NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 20.37 грн |
| 3000+ | 17.96 грн |
| 4500+ | 17.12 грн |
| 7500+ | 15.17 грн |
| 10500+ | 14.65 грн |
| NTTFS6H854NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 10A/41A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 40 V
Description: MOSFET N-CH 80V 10A/41A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 23.86 грн |
| NVTFS6H860NLTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 34.56 грн |
| 3000+ | 30.75 грн |
| NVTFS6H860NLWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Qualification: AEC-Q101
на замовлення 289500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 29.87 грн |
| 3000+ | 28.21 грн |
| 4500+ | 27.67 грн |
| NTLJS4D7N03HTAG |
Виробник: onsemi
Description: MOSFET N-CH 25V 11.6A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 15 V
Description: MOSFET N-CH 25V 11.6A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| NTTFS8D1N08HTAG |
Виробник: onsemi
Description: MOSFET N-CH 80V 14A/61A 8WDFN
Description: MOSFET N-CH 80V 14A/61A 8WDFN
товару немає в наявності
В кошику
од. на суму грн.
| NRVTSM260EV2T1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.49 грн |
| 6000+ | 8.35 грн |
| 9000+ | 8.17 грн |
| NRVTSM260EV2T1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 13622 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.01 грн |
| 13+ | 25.18 грн |
| 100+ | 17.47 грн |
| 500+ | 12.42 грн |
| 1000+ | 11.13 грн |
| NTLJS4D9N03HTAG |
Виробник: onsemi
Description: MOSFET N-CH 30V 9.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Description: MOSFET N-CH 30V 9.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| NCV59745AMW1015TAG |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 1.015V 3A 20-QFNW
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 20-QFNW (4x4)
Voltage - Output (Min/Fixed): 1.015V
Control Features: Enable, Power Good, Soft Start
Part Status: Active
PSRR: 75dB ~ 18dB (1kHz ~ 3MHz)
Voltage Dropout (Max): 1.4V @ 3A
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 1.015V 3A 20-QFNW
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 20-QFNW (4x4)
Voltage - Output (Min/Fixed): 1.015V
Control Features: Enable, Power Good, Soft Start
Part Status: Active
PSRR: 75dB ~ 18dB (1kHz ~ 3MHz)
Voltage Dropout (Max): 1.4V @ 3A
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 82.27 грн |
| 6000+ | 77.65 грн |































