| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FUSB302TV01MPX | onsemi |
Description: PROGRAMMABLE USB TYPE-C CONTROLLPackaging: Tape & Reel (TR) Package / Case: 14-WFQFN Exposed Pad Function: Controller Interface: USB Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 5.5V Current - Supply: 560mA Protocol: USB Standards: USB 3.1 Supplier Device Package: 14-WQFN (2.5x2.5) Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FUSB302TV11MPX | onsemi |
Description: PROGRAMMABLE USB TYPE-C CONTROLLPackaging: Tape & Reel (TR) Package / Case: 14-WFQFN Exposed Pad Function: Controller Interface: USB Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 5.5V Current - Supply: 560mA Protocol: USB Standards: USB 3.1 Supplier Device Package: 14-WQFN (2.5x2.5) Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX84C10_S00Z | onsemi |
Description: DIODE ZENER 10.05V 550MW SOT23Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 10.05 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOT-23-3 Part Status: Obsolete Power - Max: 550 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TND314S-TL-2H | onsemi |
Description: IC HALF BRIDGE DRIVER 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 25V Rds On (Typ): 6Ohm LS, 8Ohm HS Applications: DC Motors, General Purpose Current - Peak Output: 1A Technology: Power MOSFET Voltage - Load: 4.5V ~ 25V Supplier Device Package: 8-SOIC Load Type: Inductive |
на замовлення 3120 шт: термін постачання 21-31 дні (днів) |
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| SVC211SPA-C-AL | onsemi | Description: FM VARICAP TWIN VR 8V |
на замовлення 115200 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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LB11964FA-BH | onsemi |
Description: IC MOTOR DRIVER 3.5V-18V 8MICRO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVRGF1M | onsemi |
Description: DIODE GEN PURP 1KV 1A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0134CSSM25SPD20 | onsemi |
Description: IMAGE SENSORPackaging: Tray Package / Case: Die Type: CMOS Operating Temperature: -30°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: Die Part Status: Obsolete Frames per Second: 54 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0134CSSC00SUEA0-DPBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Bulk Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Last Time Buy Frames per Second: 54 |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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AR0134CSSM00SPD20 | onsemi |
Description: IMAGE SENSORPackaging: Tray Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0134CSSC00SPD20 | onsemi |
Description: IMAGE SENSORPackaging: Tray Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FSL538APG | onsemi |
Description: HIGH PERFORMANCE 800 V OFF-LINE |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
| 2SB1216T-TL-H | onsemi |
Description: TRANS PNP 100V 4A TPFAPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 7700 шт: термін постачання 21-31 дні (днів) |
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2SB1216S-E | onsemi |
Description: TRANS PNP 100V 4A TPPackaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 195 шт: термін постачання 21-31 дні (днів) |
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SB80W06T-TL-H | onsemi |
Description: DIODE ARRAY SCHOTTKY 60V 4A TPFA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SB80W06T-TL-H | onsemi |
Description: DIODE ARRAY SCHOTTKY 60V 4A TPFA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC14014BCL | onsemi |
Description: SHIFT REGISTER, 8-BIT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC14014BDR2G | onsemi |
Description: LOG CMOS SHIFT REG 8BITPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Parallel or Serial to Serial Logic Type: Shift Register Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Supplier Device Package: 16-SOIC Number of Bits per Element: 8 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MC14014BFG | onsemi |
Description: IC SHIFT REGISTER 8BIT 16SOEIAJ |
на замовлення 7024 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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MC14014BFELG | onsemi |
Description: IC SHIFT REGISTER 8BIT 16SOEIAJ |
на замовлення 305430 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ5260BLT1 | onsemi |
Description: DIODE ZENER 43V 225MW SOT23-3Packaging: Bulk Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 93 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 33 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NTSV30100SG | onsemi |
Description: RECTIFIER DIODE, SCHOTTKY, 1 PHAPackaging: Bulk Part Status: Active |
на замовлення 9750 шт: термін постачання 21-31 дні (днів) |
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NTSV30100CTH | onsemi |
Description: RECTIFIER DIODE, SCHOTTKY, 1 PHAPackaging: Bulk |
на замовлення 72900 шт: термін постачання 21-31 дні (днів) |
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NLAST44599DT | onsemi |
Description: IC SWITCH DUAL DPDT 16TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVBLS0D7N06C | onsemi |
Description: MOSFET N-CH 60V 54A/470A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V Power Dissipation (Max): 4.2W (Ta), 314W (Tc) Vgs(th) (Max) @ Id: 4V @ 661µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVBLS0D7N06C | onsemi |
Description: MOSFET N-CH 60V 54A/470A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V Power Dissipation (Max): 4.2W (Ta), 314W (Tc) Vgs(th) (Max) @ Id: 4V @ 661µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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NXV08V080DB1 | onsemi |
Description: 3-PHASE INVERTER AUTOMOTIPackaging: Tube Package / Case: 19-PowerDIP Module (1.470", 37.34mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C Supplier Device Package: APM-19-CBC Part Status: Active Grade: Automotive |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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| FUSB3307D6VMNWTWG | onsemi |
Description: USB POWER DELIVERY 3.0 ADAPTIVEPackaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Function: Adapter Interface: USB Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 4.75V ~ 5.5V Current - Supply: 3.1mA Protocol: USB Standards: USB 3.0 Supplier Device Package: 20-QFN (4x4) DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FUSB3307D6VMNWTWG | onsemi |
Description: USB POWER DELIVERY 3.0 ADAPTIVEPackaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Function: Adapter Interface: USB Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 4.75V ~ 5.5V Current - Supply: 3.1mA Protocol: USB Standards: USB 3.0 Supplier Device Package: 20-QFN (4x4) DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NZD3V9MUT5G | onsemi |
Description: ALLOY ZENER DFN0201Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
на замовлення 270000 шт: термін постачання 21-31 дні (днів) |
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NVTFS5C673NLWFTAG | onsemi |
Description: MOSFET N-CH 60V 13A/50A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVTFS5C673NLWFTAG | onsemi |
Description: MOSFET N-CH 60V 13A/50A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 962 шт: термін постачання 21-31 дні (днів) |
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| 21272-001-XTP | onsemi |
Description: CRYSTAL ASIC Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NFVA35065L32 | onsemi |
Description: IGBT IPM 650V 50A 27-PWRDIP MODPackaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2500Vrms Grade: Automotive Current: 50 A Voltage: 650 V |
на замовлення 53 шт: термін постачання 21-31 дні (днів) |
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NE5230DG | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: 0°C ~ 70°C Current - Supply: 1.1mA Slew Rate: 0.25V/µs Gain Bandwidth Product: 600 kHz Current - Input Bias: 40 nA Voltage - Input Offset: 400 µV Supplier Device Package: 8-SOIC Part Status: Obsolete Number of Circuits: 1 Current - Output / Channel: 32 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 15 V |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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SA5230N | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Rail-to-Rail Mounting Type: Through Hole Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 1.1mA Slew Rate: 0.25V/µs Gain Bandwidth Product: 600 kHz Current - Input Bias: 40 nA Voltage - Input Offset: 400 µV Supplier Device Package: 8-PDIP Number of Circuits: 1 Current - Output / Channel: 32 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 15 V |
на замовлення 1075 шт: термін постачання 21-31 дні (днів) |
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NCV20032DTBR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP |
на замовлення 59794 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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NCV20061SN3T1G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 5TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV20094DTBR2G | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 23µA (x4 Channels) Slew Rate: 0.15V/µs Gain Bandwidth Product: 350 kHz Current - Input Bias: 1 nA Voltage - Input Offset: 500 µV Supplier Device Package: 14-TSSOP Part Status: Active Number of Circuits: 4 Current - Output / Channel: 8.5 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCV20094DTBR2G | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 23µA (x4 Channels) Slew Rate: 0.15V/µs Gain Bandwidth Product: 350 kHz Current - Input Bias: 1 nA Voltage - Input Offset: 500 µV Supplier Device Package: 14-TSSOP Part Status: Active Number of Circuits: 4 Current - Output / Channel: 8.5 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCV20081SN3T1G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 5TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV20091SN3T1G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 5TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV20061SN2T1G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 5TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV20061SN2T1G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 5TSOP |
на замовлення 2770 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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NCV20064DR2G | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV20064DR2G | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV20064DTBR2G | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV20064DTBR2G | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV20084DTBR2G | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 48µA (x4 Channels) Slew Rate: 0.4V/µs Gain Bandwidth Product: 1.2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 500 mV Supplier Device Package: 14-TSSOP Part Status: Active Number of Circuits: 4 Current - Output / Channel: 15 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCV20084DTBR2G | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 48µA (x4 Channels) Slew Rate: 0.4V/µs Gain Bandwidth Product: 1.2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 500 mV Supplier Device Package: 14-TSSOP Part Status: Active Number of Circuits: 4 Current - Output / Channel: 15 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCV2003SN2T1G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 5TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV2001SN2T1G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 5TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV20072DTBR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 420µA (x2 Channels) Slew Rate: 2.4V/µs Gain Bandwidth Product: 3.2 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 1.3 mV Supplier Device Package: 8-TSSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 36 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NCV20072DTBR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 420µA (x2 Channels) Slew Rate: 2.4V/µs Gain Bandwidth Product: 3.2 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 1.3 mV Supplier Device Package: 8-TSSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 36 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 6225 шт: термін постачання 21-31 дні (днів) |
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NRVUS1GFA | onsemi |
Description: DIODE STANDARD 400V 1A SOD123FLPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 159 шт: термін постачання 21-31 дні (днів) |
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NTMT090N65S3HF | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 5V @ 860µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMT090N65S3HF | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 5V @ 860µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMT095N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.8mA Supplier Device Package: 4-TDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTMT095N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.8mA Supplier Device Package: 4-TDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V |
на замовлення 5841 шт: термін постачання 21-31 дні (днів) |
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FDP045N10A-F032 | onsemi |
Description: MOSFET N-CH 100V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 250mA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. |
| FUSB302TV01MPX |
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Виробник: onsemi
Description: PROGRAMMABLE USB TYPE-C CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-WQFN (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: PROGRAMMABLE USB TYPE-C CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-WQFN (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 44.43 грн |
| FUSB302TV11MPX |
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Виробник: onsemi
Description: PROGRAMMABLE USB TYPE-C CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-WQFN (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: PROGRAMMABLE USB TYPE-C CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 14-WFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 560mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 14-WQFN (2.5x2.5)
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 44.43 грн |
| BZX84C10_S00Z |
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Виробник: onsemi
Description: DIODE ZENER 10.05V 550MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10.05 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Description: DIODE ZENER 10.05V 550MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10.05 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
товару немає в наявності
В кошику
од. на суму грн.
| TND314S-TL-2H |
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 8Ohm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: 8-SOIC
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 8Ohm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: 8-SOIC
Load Type: Inductive
на замовлення 3120 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 460+ | 51.28 грн |
| SVC211SPA-C-AL |
Виробник: onsemi
Description: FM VARICAP TWIN VR 8V
Description: FM VARICAP TWIN VR 8V
на замовлення 115200 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| LB11964FA-BH |
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Виробник: onsemi
Description: IC MOTOR DRIVER 3.5V-18V 8MICRO
Description: IC MOTOR DRIVER 3.5V-18V 8MICRO
товару немає в наявності
В кошику
од. на суму грн.
| NRVRGF1M |
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Виробник: onsemi
Description: DIODE GEN PURP 1KV 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 1KV 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| AR0134CSSM25SPD20 |
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Виробник: onsemi
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 54
товару немає в наявності
В кошику
од. на суму грн.
| AR0134CSSC00SUEA0-DPBR |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Bulk
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Bulk
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 1646.02 грн |
| FSL538APG |
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Виробник: onsemi
Description: HIGH PERFORMANCE 800 V OFF-LINE
Description: HIGH PERFORMANCE 800 V OFF-LINE
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| 2SB1216T-TL-H |
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Виробник: onsemi
Description: TRANS PNP 100V 4A TPFA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS PNP 100V 4A TPFA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 7700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 847+ | 28.84 грн |
| 2SB1216S-E |
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Виробник: onsemi
Description: TRANS PNP 100V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS PNP 100V 4A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 195 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.23 грн |
| 10+ | 58.57 грн |
| 100+ | 44.85 грн |
| SB80W06T-TL-H |
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Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 60V 4A TPFA
Description: DIODE ARRAY SCHOTTKY 60V 4A TPFA
товару немає в наявності
В кошику
од. на суму грн.
| SB80W06T-TL-H |
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Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 60V 4A TPFA
Description: DIODE ARRAY SCHOTTKY 60V 4A TPFA
товару немає в наявності
В кошику
од. на суму грн.
| MC14014BCL |
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Виробник: onsemi
Description: SHIFT REGISTER, 8-BIT
Description: SHIFT REGISTER, 8-BIT
товару немає в наявності
В кошику
од. на суму грн.
| MC14014BDR2G |
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Виробник: onsemi
Description: LOG CMOS SHIFT REG 8BIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
Description: LOG CMOS SHIFT REG 8BIT
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 8
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 17.45 грн |
| MC14014BFG |
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Виробник: onsemi
Description: IC SHIFT REGISTER 8BIT 16SOEIAJ
Description: IC SHIFT REGISTER 8BIT 16SOEIAJ
на замовлення 7024 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MC14014BFELG |
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Виробник: onsemi
Description: IC SHIFT REGISTER 8BIT 16SOEIAJ
Description: IC SHIFT REGISTER 8BIT 16SOEIAJ
на замовлення 305430 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MMBZ5260BLT1 |
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Виробник: onsemi
Description: DIODE ZENER 43V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
Description: DIODE ZENER 43V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11539+ | 2.22 грн |
| NTSV30100SG |
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на замовлення 9750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 761+ | 28.66 грн |
| NTSV30100CTH |
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на замовлення 72900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 624+ | 36.49 грн |
| NLAST44599DT |
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Виробник: onsemi
Description: IC SWITCH DUAL DPDT 16TSSOP
Description: IC SWITCH DUAL DPDT 16TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| NVBLS0D7N06C |
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Виробник: onsemi
Description: MOSFET N-CH 60V 54A/470A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V
Power Dissipation (Max): 4.2W (Ta), 314W (Tc)
Vgs(th) (Max) @ Id: 4V @ 661µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 54A/470A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V
Power Dissipation (Max): 4.2W (Ta), 314W (Tc)
Vgs(th) (Max) @ Id: 4V @ 661µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVBLS0D7N06C |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 54A/470A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V
Power Dissipation (Max): 4.2W (Ta), 314W (Tc)
Vgs(th) (Max) @ Id: 4V @ 661µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 54A/470A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 470A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 80A, 10V
Power Dissipation (Max): 4.2W (Ta), 314W (Tc)
Vgs(th) (Max) @ Id: 4V @ 661µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 30 V
Qualification: AEC-Q101
на замовлення 750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1082.90 грн |
| 10+ | 731.78 грн |
| 100+ | 556.52 грн |
| 500+ | 516.43 грн |
| NXV08V080DB1 |
![]() |
Виробник: onsemi
Description: 3-PHASE INVERTER AUTOMOTI
Packaging: Tube
Package / Case: 19-PowerDIP Module (1.470", 37.34mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: APM-19-CBC
Part Status: Active
Grade: Automotive
Description: 3-PHASE INVERTER AUTOMOTI
Packaging: Tube
Package / Case: 19-PowerDIP Module (1.470", 37.34mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: APM-19-CBC
Part Status: Active
Grade: Automotive
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2183.11 грн |
| FUSB3307D6VMNWTWG |
![]() |
Виробник: onsemi
Description: USB POWER DELIVERY 3.0 ADAPTIVE
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 3.1mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Description: USB POWER DELIVERY 3.0 ADAPTIVE
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 3.1mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| FUSB3307D6VMNWTWG |
![]() |
Виробник: onsemi
Description: USB POWER DELIVERY 3.0 ADAPTIVE
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 3.1mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Description: USB POWER DELIVERY 3.0 ADAPTIVE
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 3.1mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| NZD3V9MUT5G |
![]() |
Виробник: onsemi
Description: ALLOY ZENER DFN0201
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: ALLOY ZENER DFN0201
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 270000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.45 грн |
| 30000+ | 2.32 грн |
| 50000+ | 2.08 грн |
| 100000+ | 1.73 грн |
| 250000+ | 1.70 грн |
| NVTFS5C673NLWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 13A/50A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 13A/50A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVTFS5C673NLWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 13A/50A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 13A/50A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Qualification: AEC-Q101
на замовлення 962 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.15 грн |
| 10+ | 78.01 грн |
| 100+ | 59.19 грн |
| 500+ | 47.83 грн |
| 21272-001-XTP |
Виробник: onsemi
Description: CRYSTAL ASIC
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: CRYSTAL ASIC
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| NFVA35065L32 |
![]() |
Виробник: onsemi
Description: IGBT IPM 650V 50A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Grade: Automotive
Current: 50 A
Voltage: 650 V
Description: IGBT IPM 650V 50A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Grade: Automotive
Current: 50 A
Voltage: 650 V
на замовлення 53 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3073.17 грн |
| NE5230DG |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1.1mA
Slew Rate: 0.25V/µs
Gain Bandwidth Product: 600 kHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 400 µV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 32 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 15 V
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1.1mA
Slew Rate: 0.25V/µs
Gain Bandwidth Product: 600 kHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 400 µV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 32 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 15 V
на замовлення 980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 376+ | 61.73 грн |
| SA5230N |
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Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Rail-to-Rail
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.1mA
Slew Rate: 0.25V/µs
Gain Bandwidth Product: 600 kHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 400 µV
Supplier Device Package: 8-PDIP
Number of Circuits: 1
Current - Output / Channel: 32 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 15 V
Description: IC OPAMP GP 1 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Rail-to-Rail
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1.1mA
Slew Rate: 0.25V/µs
Gain Bandwidth Product: 600 kHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 400 µV
Supplier Device Package: 8-PDIP
Number of Circuits: 1
Current - Output / Channel: 32 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 15 V
на замовлення 1075 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 381+ | 62.33 грн |
| NCV20032DTBR2G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
на замовлення 59794 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| NCV20061SN3T1G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
товару немає в наявності
В кошику
од. на суму грн.
| NCV20094DTBR2G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x4 Channels)
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x4 Channels)
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 41.90 грн |
| NCV20094DTBR2G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x4 Channels)
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x4 Channels)
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.84 грн |
| 10+ | 89.52 грн |
| 25+ | 84.95 грн |
| 100+ | 61.20 грн |
| 250+ | 54.09 грн |
| 500+ | 51.24 грн |
| 1000+ | 39.20 грн |
| NCV20081SN3T1G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
товару немає в наявності
В кошику
од. на суму грн.
| NCV20091SN3T1G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
товару немає в наявності
В кошику
од. на суму грн.
| NCV20061SN2T1G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
товару немає в наявності
В кошику
од. на суму грн.
| NCV20061SN2T1G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
на замовлення 2770 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| NCV20064DR2G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOIC
Description: IC OPAMP GP 4 CIRCUIT 14SOIC
товару немає в наявності
В кошику
од. на суму грн.
| NCV20064DR2G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOIC
Description: IC OPAMP GP 4 CIRCUIT 14SOIC
товару немає в наявності
В кошику
од. на суму грн.
| NCV20064DTBR2G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| NCV20064DTBR2G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| NCV20084DTBR2G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 48µA (x4 Channels)
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1.2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 15 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 48µA (x4 Channels)
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1.2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 15 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 72.25 грн |
| NCV20084DTBR2G |
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Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 48µA (x4 Channels)
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1.2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 15 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 48µA (x4 Channels)
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1.2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 15 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.23 грн |
| 10+ | 136.58 грн |
| 25+ | 128.82 грн |
| 100+ | 103.01 грн |
| 250+ | 96.72 грн |
| 500+ | 84.63 грн |
| 1000+ | 68.98 грн |
| NCV2003SN2T1G |
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Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
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| NCV2001SN2T1G |
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Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
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В кошику
од. на суму грн.
| NCV20072DTBR2G |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 31.03 грн |
| 5000+ | 28.04 грн |
| NCV20072DTBR2G |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6225 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 116.20 грн |
| 10+ | 67.77 грн |
| 25+ | 56.89 грн |
| 100+ | 42.18 грн |
| 250+ | 36.81 грн |
| 500+ | 33.57 грн |
| 1000+ | 30.38 грн |
| NRVUS1GFA |
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Виробник: onsemi
Description: DIODE STANDARD 400V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 159 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.32 грн |
| 16+ | 19.92 грн |
| 100+ | 15.77 грн |
| NTMT090N65S3HF |
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Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
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В кошику
од. на суму грн.
| NTMT090N65S3HF |
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Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
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В кошику
од. на суму грн.
| NTMT095N65S3H |
![]() |
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 266.06 грн |
| NTMT095N65S3H |
![]() |
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
на замовлення 5841 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 521.67 грн |
| 10+ | 414.34 грн |
| 100+ | 344.85 грн |
| 500+ | 294.30 грн |
| FDP045N10A-F032 |
Виробник: onsemi
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
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